DOCSLIB.ORG

4.3 Raman Spectroscopy: Experimental Setup ……………..………

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
4.3 Raman Spectroscopy: Experimental Setup ……………..……… UC Riverside UC Riverside Electronic Theses and Dissertations Title Quasi 2D Materials: Raman Nanometrology and Thermal Management Applications Permalink https://escholarship.org/uc/item/7km0j4h4 Author Shahil, Khan Mohammad Farhan Publication Date 2012 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California UNIVERSITY OF CALIFORNIA RIVERSIDE Quasi 2D Materials: Raman Nanometrology and Thermal Management Applications A Dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Electrical Engineering by Khan Mohammad Farhan Shahil March 2012 Dissertation Committee: Dr. Alexander A. Balandin, Chairperson Dr. Roger Lake Dr. Elaine D. Haberer Copyright by Khan Mohammad Farhan Shahil 2012 The Dissertation of Khan Mohammad Farhan Shahil is approved: Committee Chairperson University of California, Riverside Acknowledgements I would first like to thank my advisor Dr. Alexander Balandin for his continuous guidance and encouragement in the course of my research. He has helped me grow professionally and has given me proper exposure to the academic and industrial research work in my field. He gave me freedom and opportunities to work on challenging research problems which helped me develop my original research ideas. His interactive guidance, high research standards and work ethics have been invaluable for the project. The distinguished lessons and experiences he has equipped me with will always stay with me throughout my future journey. I would also thank Dr. Elaine D. Haberer and Dr. Roger Lake for taking the time to serve in my dissertation committee. I also thank them for numerous beneficial discussions that I had with them all along. I thank MARCO Center on Functional Engineered Nano Architectonics (FENA), Office of Naval Research (ONR), Semiconductor Research Corporation (SRC) and Defense Advanced Research Project Agency (DARPA) for their support. I would like to thank Dr. Andreas Kerber (GlobalFoundries), Dr. William McMahon (GlobalFoundries) and Dr. Tanya Nigam (GlobalFoundries) for guiding me during my internship at GlobalFoundries. I greatly benefited from the experiments on SRAM reliability. iv I would also like to thank all the present and past group members for generating a research-friendly environment at the Nano Device Laboratory. A special thanks to Dr. Muhammad Rahman, Dr. Samia Subrina, Mr. Zahid Hossain, Ms. Jie Yu, Mr. Pradyumna Goli, Dr. Desalegne Teweldebrhan and Dr. Vivek Goyal for making my days at NDL pleasant and memorable. My times were also made memorable by all my friends and people at UC Riverside. I wish them all the best in life. Last but not the least; I would like to thank my parents, sister, and in-laws for their continuous support. My parents have created the pedestal for me to stand here today. They have been my inspiration and guiding star. And lastly, to my dearest and loving wife, Sonia for her unconditional support and encourage, while pursuing her PhD in Electrical Engineering. This work would not have been possible without the steadfast support and encouragement of therm. This dissertation is dedicated to them. On top of everything, all praise goes to the Almighty Allah; the most Gracious, the most merciful for blessing me with all good things I have and showing me the enlightened path. The text of this dissertation, in part or in full, is a reprint of the material as it appears in the following journals: K. M. F. Shahil and A. A. Balandin, “Graphene – Multilayer Graphene Nanocomposites as the Highly Efficient Thermal Interface Materials”, Nano Letters, DOI: 10.1021/nl203906r (2012). © American Chemical Society, 2012. v K. M. F. Shahil, M. Z. Hossain, V. Goyal and A. A. Balandin, “Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi2Te3, Bi2Se3 and Sb2Te3 Materials” Journal of Applied Physics (JAP), (2012). ©American Institute of Physics, 2012. K. M. F. Shahil, M. Z. Hossain, D. Teweldebrhan and A. A. Balandin, “Crystal Symmetry Breaking in Few-Quintuple Bi2Te3 Films: Applications in Nanometrology of Topological Insulators” Applied Physics let. (APL) 96, 16, (2010). ©American Institute of Physics, 2010. K. M. F. Shahil, V. Goyal and A. A. Balandin, “Thermal Properties of Graphene: Applications in Thermal Interface Materials”, ECS Transactions (ECST) 35 (3) 193-199 (2011). © The Electrochemical Society, 2011. vi To my parents, sister and my wife vii ABSTRACT OF THE DISSERTATION Quasi 2D Materials: Raman Nanometrology and Thermal Management Applications by Khan Mohammad Farhan Shahil Doctor of Philosophy, Graduate Program in Electrical Engineering University of California, Riverside, March 2012 Professor Alexander A. Balandin, Chairperson Quasi two-dimensional (2D) materials obtained by the “graphene-like” exfoliation attracted tremendous attention. Such materials revealed unique electronic, thermal and optical properties, which can be potentially used in electronics, thermal management and energy conversion. This dissertation research addresses two separate but synergetic problems: (i) preparation and optical characterization of quasi-2D films of the bismuth- telluride (Bi2Te3) family of materials, which demonstrate both thermoelectric and topological insulator properties; and (ii) investigation of thermal properties of composite materials prepared with graphene and few-layer graphene (FLG). The first part of dissertation reports properties of the exfoliated few-quintuple layers of Bi2Te3, Bi2Se3 and Sb2Te3. Both non-resonant and resonant Raman scattering spectra have been investigated. It was found that the crystal symmetry breaking in few-quintuple films results in viii appearance of A1u-symmetry Raman peaks, which are not active in the bulk crystals. The scattering spectra measured under the 633-nm wavelength excitation reveals a number of resonant features, which could be used for analysis of the electronic and phonon processes in these materials. The obtained results help to understand the physical mechanisms of Raman scattering in the few-quintuple-thick films and can be used for nanometrology of topological insulator films on various substrates. The second part of the dissertation is dedicated to investigation of properties of composite materials prepared with graphene and FLG. It was found that the optimized mixture of graphene and multilayer graphene – produced by the high-yield inexpensive liquid-phase-exfoliation technique – can lead to an extremely strong enhancement of the cross-plane thermal conductivity K of the composite. The “laser flash” measurements revealed a record-high enhancement of K by 2300 % in the graphene-based polymer at the filler loading fraction f =10 vol. %. It was determined that the relatively high concentration of the single-layer and bilayer graphene flakes (~10-15%) present simultaneously with the thicker multilayers of large lateral size (~ 1 m) were essential for the observed unusual K enhancement. Our modeling results suggest that graphene – multilayer graphene nanocomposite used as the thermal interface material outperforms those with carbon nanotubes or metal nanoparticles owing to graphene’s aspect ratio and lower Kapitza resistance at the graphene - matrix interface. ix Table of Contents Acknowledgments………………………………………………………………. iv Dedication………………………………………………………………………. vii Abstract…………………………………………………………………………. viii 1 Introduction 1.1 Motivation……………………………………………………..... 1 1.2 Overview…………………………………………….................... 12 13 References …………………………………………………………........ 2 Phonon Engineering in Nanostructures: Raman Spectroscopy 2.1 Introduction ...………………………………………………….. 16 2.2 Background of Phonon Engineering ……………………………. 17 2.3 Raman Spectroscopy: Literature Review....…………………….. 19 2.3.1 Historical Background and Theoretical Formalism……... 19 2.3.2 Selection Rules in Raman Spectroscopy………………… 25 2.3.3 Relaxation of Raman Selection Rules…………………… 26 2.3.4 Resonant Raman Scattering……………………………... 30 2.3.5 Applications of Raman Spectroscopy…………………… 32 2.4 Summary………………………………………………………... 34 References ……………………………………………………........….. 35 x 3 Nanostructures: Quasi 2D Materials 3.1 Introduction ...…………………………………………………… 36 3.2 2D materials: Graphene and Beyond…………………………….. 37 3.3 Quasi 2D materials……………………………………………….. 40 3.3.1 BV-AVI compounds: Bi2Te3, Bi2Se3 and Sb2Te3…..……... 40 3.3.2 Crystal Structure and Lattice Vibrations of Bi Te………... 2 42 3.3.3 Symmetry Properties and Selection Rules……………… 45 3.4 Topological Insulators……………………………………………. 48 3.5 Summary…………………………………………………………. 51 52 References …………………………………………………………….. 4 Experimental Methodology: Raman Nanometrology 4.1 Introduction ...………………………………………………..…. 54 4.2 Sample Preparation …………………….....……………………... 55 4.2.1 Mechanical Exfoliation ……………………….…..……... 55 4.2.2 Characterization Techniques: Optical and Scanning Electron Microscopy…. ………………………......……. 56 4.2.3 Stoichiometric Composition and Crystallinity: Energy Dispersive Spectrometry and Transmission Electron Microscopy......................................................................... 59 4.2.4 Surface Profile and Thickness calibration: Atomic Force Microscopy........................................................................... 61 4.3 Raman Spectroscopy: Experimental Setup ……………..……….. 63 4.3.1 Instrumentation…………………………………………... 63 4.3.2 Light Sources and Detection…………………………….. 65 xi 4.3.3 Rayleigh Scattering Filters.……………………………... 66 4.3.4 Objective Lenses………………………………………… 67 4.3.5 Analysis Techniques
Load more

Recommended publications
  • Journal of Materials Chemistry C Rscpublishing COMMUNICATION
    Journal of Materials Chemistry C RSCPublishing COMMUNICATION The room temperature phosphine-free organometallic synthesis of near-infrared emitting Cite this: DOI: 10.1039/x0xx00000x HgSe quantum dots H. Mirzai,a M. N. Nordin,b,c R. J. Curry,b J.-S. Bouillard,a A. V. Zayats,a M. a Received 00th January 2012, Green* Accepted 00th January 2012 DOI: 10.1039/x0xx00000x Luminescent mercury selenide (HgSe) quantum dots have been synthesised by a phosphine- free method using oleic acid as a capping agent. The modification of experimental conditions www.rsc.org/ such as temperature resulted in particles of various sizes (15 - 100 nm) and morphologies not previously seen in HgSe, with emission tuneable between 1000 nm and 1350 nm. The popularity of semiconductor quantum dots (QDs) and b Advanced Technology Institute, Department of Electronic Engineering, their association with next-generation opto-electronic devices University of Surrey, Guildford, Surrey.UK GU2 7XH c and biomedical applications has grown rapidly over the last Present address: Medical Engineering Technology Department, University Kuala Lumpur, 53100, Gombak, Malaysia. years. Current research focuses on various synthetic routes as a means to modify QD characteristics to satisfy specific due to the lack of obvious and safe precursors (despite the optical and magnetic requirements for applications such as fact that many early routes to nano-dispersed semiconductors biological imaging,1 telecommunications,2 photodetection3 4 were based on mercury chalcogenides). We have focused on and solar energy. Quantum dots have provided a new source mercury chalcogenides due to their low reaction temperatures of electromagnetic radiation on the nano-scale.
    [Show full text]
  • Properties of Sputtered Mercury Telluride Contacts on P-Type Cadmium Telluride A
    Properties of sputtered mercury telluride contacts on p-type cadmium telluride A. Zozime, C. Vermeulin To cite this version: A. Zozime, C. Vermeulin. Properties of sputtered mercury telluride contacts on p-type cadmium telluride. Revue de Physique Appliquée, Société française de physique / EDP, 1988, 23 (11), pp.1825- 1835. 10.1051/rphysap:0198800230110182500. jpa-00246011 HAL Id: jpa-00246011 https://hal.archives-ouvertes.fr/jpa-00246011 Submitted on 1 Jan 1988 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Revue Phys. Appl. 23 (1988) 1825-1835 NOVEMBRE 1988, 1825 Classification Physics Abstracts 73.40 - 79.20 Properties of sputtered mercury telluride contacts on p-type cadmium telluride A. Zozime and C. Vermeulin Laboratoire de Physique des Matériaux, CNRS, 1 place A. Briand, 92195 Meudon Cedex, France (Reçu le 12 avril 1988, révisé le 29 juillet 1988, accepté le 16 août 1988) Résumé. 2014 La valeur élevée du travail de sortie du composé semi-métallique HgTe (q03A6m ~ 5.9 eV) a conduit à utiliser ce matériau pour réaliser des contacts ohmiques de faible résistance spécifique 03C1c (03A9 cm2) sur le composé semi-conducteur II-VI CdTe de type p, dans la gamme des résistivités 70 03A9 cm 03C1B 45 k03A9 cm.
    [Show full text]
  • Trends in Performance Limits of the HOT Infrared Photodetectors
    applied sciences Review Trends in Performance Limits of the HOT Infrared Photodetectors Antoni Rogalski 1, Piotr Martyniuk 1,*, Małgorzata Kopytko 1 and Weida Hu 2 1 Faculty of Advanced Technologies and Chemistry, Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland; [email protected] (A.R.); [email protected] (M.K.) 2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China; [email protected] * Correspondence: [email protected]; Tel.: +48-26-183-92-15 Abstract: The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots. Keywords: HOT IR detectors; HgCdTe; P-i-N; BLIP condition; 2D material photodetectors; colloidal quantum dot photodetectors Citation: Rogalski, A.; Martyniuk, P.; Kopytko, M.; Hu, W.
    [Show full text]
  • Bandgap-Engineered Hgcdte Infrared Detector Structures for Reduced Cooling Requirements
    Bandgap-Engineered HgCdTe Infrared Detector Structures for Reduced Cooling Requirements by Anne M. Itsuno A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in The University of Michigan 2012 Doctoral Committee: Associate Professor Jamie D. Phillips, Chair Professor Pallab K. Bhattacharya Professor Fred L. Terry, Jr. Assistant Professor Kevin P. Pipe c Anne M. Itsuno 2012 All Rights Reserved To my parents. ii ACKNOWLEDGEMENTS First and foremost, I would like to thank my research advisor, Professor Jamie Phillips, for all of his guidance, support, and mentorship throughout my career as a graduate student at the University of Michigan. I am very fortunate to have had the opportunity to work alongside him. I sincerely appreciate all of the time he has taken to meet with me to discuss and review my research work. He is always very thoughtful and respectful of his students, treating us as peers and valuing our opinions. Professor Phillips has been a wonderful inspiration to me. I have learned so much from him, and I believe he truly exemplifies the highest standard of teacher and technical leader. I would also like to acknowledge the past and present members of the Phillips Research Group for their help, useful discussions, and camaraderie. In particular, I would like to thank Dr. Emine Cagin for her constant encouragement and humor. Emine has been a wonderful role model. I truly admire her expertise, her accom- plishments, and her unfailing optimism and can only hope to follow in her footsteps. I would also like to thank Dr.
    [Show full text]
  • Experimental Stability of Tellurium and Its Implications for the Venusian Radar Anomalies
    44th Lunar and Planetary Science Conference (2013) 2951.pdf EXPERIMENTAL STABILITY OF TELLURIUM AND ITS IMPLICATIONS FOR THE VENUSIAN RADAR ANOMALIES. E. Kohler1, V. Chevrier1, P. Gavin1, N. Johnson2. 1Arkansas Center for Space and Plane- tary Sciences, University of Arkansas, Fayetteville, AR, 72701; 2National Aeronautics and Space Administration (NASA) Goddard Space Flight Center, Greenbelt, MD, 20771. [email protected] Introduction: Evidence of radar anomalies on Ve- portant aspect of determining the source, thus, it was nus has sparked debate about potential atmospheric chosen for this experiment. One gram of each were interactions with the surface. These high reflectivity heated to average Venusian surface conditions, and (low emissivity) anomalies have been found on the then to highland conditions (460°C and 90 bar, 380°C Venusian surface between altitudes of 2.5-4.75km and 55 bar respectively). The latter conditions are the using radar mapping [1-5]. There have been several anticipated temperature and pressure at the anomalies theoretical studies on the source of these anomalies altitude. After each run, the samples were weighed to including increased surface roughness, materials with determine stability and/or reactivity. Each compound higher dielectric constants or surface-atmospheric in- was also tested in a Lindberg tube oven at the Univer- teractions [1, 6]. Additionally, the literature suggests sity of Arkansas and heated to both 460°C and 380°C several possibilities of metal compound frosts or low at ambient pressure. The oven experiment isolated the lying clouds/fog. Evidence from Venera 13 and 14 effects of temperature. The samples were then ana- indicates a low layer cloud deck at an altitude of 1- lyzed using X-Ray Diffraction (XRD) and Scanning 2km that could consist of tellurium, bismuth, or lead Electron Microscope (SEM).
    [Show full text]
  • Molecular Beam Epitaxy of Cdxhg12xte
    12 Molecular Beam Epitaxy of CdxHg12xTe Yu.G. Sidorov1, A.P. Anciferov1, V.S. Varavin1, S.A. Dvoretsky1, N.N. Mikhailov1, M.V. Yakushev1, I.V. Sabinina1, V.G. Remesnik1, D.G. Ikusov1, I.N. Uzhakov1, G.Yu. Sidorov1, V.D. Kuzmin1, S.V. Rihlicky1, V.A. Shvets1, A.S. Mardezov1, E.V. Spesivcev1, A.K. Gutakovskii1, A.V. Latyshev1,2 1 RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS OF THE SIBERIAN BRANCHOF THE RUSSIAN ACADEMY OF SCIENCES, NOVOSIBIRSK, RUSSIA 2 NOVOSIBIRSK STATE UNIVERSITY, NOVOSIBIRSK, RUSSIA Infrared imaging systems are required for applications in medicine, agriculture, the chemical industry, ferrous and nonferrous metals metallurgy, the fuel industry, and other areas of the economy. Due to high quantum efficiency, tunable absorption wavelength, and a wide oper- ating temperature range, HgCdTe (mercury cadmium telluride, MCT)-based infrared focal plane arrays are a good choice for the fabrication of high-performance infrared imaging sys- tems. Creating arrays and matrices of photodetectors with a large number of elements imposes stringent requirements for narrow-band MCT. What is wanted is a large area plate MCT with highly uniform properties and low cost. MCT technology over the past 20 years has evolved from the production of relatively small (diameter ,10 mm) volume bars to large (up to 150 mm in diameter) epitaxial layers on alternative substrates. The electrical properties of solid solutions MCT are largely deter- mined by the intrinsic point defects and residual impurities associated with the growing method. MCT is characterized by a high rate of diffusion of point defects. Therefore, a low growth temperature is need.
    [Show full text]
  • Solid State Recrystallization of II-VI Semiconductors : Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide R
    Solid State Recrystallization of II-VI Semiconductors : Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide R. Triboulet, J. Ndap, A. El Mokri, A. Tromson Carli, A. Zozime To cite this version: R. Triboulet, J. Ndap, A. El Mokri, A. Tromson Carli, A. Zozime. Solid State Recrystallization of II-VI Semiconductors : Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide. J. Phys. IV, 1995, 05 (C3), pp.C3-141-C3-149. 10.1051/jp4:1995312. jpa-00253678 HAL Id: jpa-00253678 https://hal.archives-ouvertes.fr/jpa-00253678 Submitted on 1 Jan 1995 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE IV Colloque C3, supplCment au Journal de Physique 111, Volume 5, avril 1995 Solid State Recrystallization of 11-VI Semiconductors: Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide R. Triboulet, 3.0. Ndap, A. El Mokri, A. Tromson Carli and A. Zozime CNRS, Laboratoire de Physique des Solides de Bellevue, 1 place Aristide Briand, F 92195 Meudon cedex, France Abstract : Solid state recrystallization (SSR) has been very rarely used for semiconductors. It has nevertheless been proposed, and industrially used, for the single crystal growth of cadmium mercury telluride according to a quench-anneal process.
    [Show full text]
  • Survey of Mercury and Mercury Compounds
    Survey of mercury and mercury compounds Part of the LOUS-review Environmental Project No. 1544, 2014 Title: Authors and contributors: Survey of mercury and mercury compounds Jakob Maag Jesper Kjølholt Sonja Hagen Mikkelsen Christian Nyander Jeppesen Anna Juliana Clausen and Mie Ostenfeldt COWI A/S, Denmark Published by: The Danish Environmental Protection Agency Strandgade 29 1401 Copenhagen K Denmark www.mst.dk/english Year: ISBN no. 2014 978-87-93026-98-8 Disclaimer: When the occasion arises, the Danish Environmental Protection Agency will publish reports and papers concerning research and development projects within the environmental sector, financed by study grants provided by the Danish Environmental Protection Agency. It should be noted that such publications do not necessarily reflect the position or opinion of the Danish Environmental Protection Agency. However, publication does indicate that, in the opinion of the Danish Environmental Protection Agency, the content represents an important contribution to the debate surrounding Danish environmental policy. While the information provided in this report is believed to be accurate, the Danish Environmental Protection Agency disclaims any responsibility for possible inaccuracies or omissions and consequences that may flow from them. Neither the Danish Environmental Protection Agency nor COWI or any individual involved in the preparation of this publication shall be liable for any injury, loss, damage or prejudice of any kind that may be caused by persons who have acted based on their understanding of the information contained in this publication. Sources must be acknowledged. 2 Survey of mercury and mercury compounds Contents Preface ...................................................................................................................... 5 Summary and conclusions ......................................................................................... 7 Sammenfatning og konklusion ................................................................................ 14 1.
    [Show full text]
  • V. THERMOELECTRIC PROCESSES and MATERIALS Prof. R. B. Adler
    V. THERMOELECTRIC PROCESSES AND MATERIALS Prof. R. B. Adler Prof. P. Aigraintt R. E. Nelson L. Godefroyt Jane H. Dennis J. Tavernier$ O. P. Manley RESEARCH OBJECTIVES We are trying to understand the relationships between the structure of a solid and its relevant properties as a thermoelectric converter. Now, and for some time to come, we expect to remain interested primarily in compound semiconductors, and in mixed crystals of them. Besides the very considerable matters of actually making and handling the materials involved, the obvious properties of thermoelements which command immediate attention are: the thermoelectric power (Seebeck coefficient) or Peltier heat (Peltier coefficient), the electrical conductivity, and the thermal conductivity. The first two properties are dependent upon the electronic energy-band structure of the solid and the electronic scattering mechanisms in it. Underlying the third property are the dynamics and mechanical perfection of the crystal lattice. Collateral features of interest in thermoelectric applications are such device- oriented topics as the diffusion (or other transport) of contact materials in the semi- conductor and the performance of completed coolers or generators. A little progress has been made during the past year on selected parts of each topic mentioned above. We have learned how to grow good single crystals of the well- understood material Bi 2 Te 3 , and the group in France has struggled with new compounds of Mo and W, and they have made successfully polycrystalline solid solutions in the Se-Te system. We have also helped Professor David C. White's Energy Conversion Group, of the Electronic Systems Laboratory, M.
    [Show full text]
  • Reporting Requirements for the TSCA Mercury Inventory
    30054 Federal Register / Vol. 83, No. 124 / Wednesday, June 27, 2018 / Rules and Regulations N.J.A.C. 7:27B–3.10. Procedures for the DATES: This final rule is effective August • All other basic organic chemical determination of volatile organic 27, 2018. manufacturing (NAICS code 325199). compounds in surface coating ADDRESSES: The docket for this action, • Plastics material and resin formulations identified by docket identification (ID) manufacturing (NAICS code 325211). N.J.A.C. 7:27B–3.11. Procedures for the • Pesticide and other agricultural determination of volatile organic number EPA–HQ–OPPT–2017–0421, is compounds emitted from transfer available at http://www.regulations.gov chemical manufacturing (NAICS code operations using a flame ionization or at the Office of Pollution Prevention 325320). • detector (FID) or non-dispersive infrared and Toxics Docket (OPPT Docket), Medicinal and botanical analyzer (NDIR) Environmental Protection Agency manufacturing (NAICS code 325411). • N.J.A.C. 7:27B–3.12. Procedures for the Docket Center (EPA/DC), West William Pharmaceutical preparation determination of volatile organic Jefferson Clinton Bldg., Rm. 3334, 1301 manufacturing (NAICS code 325412). • compounds in cutback and emulsified Constitution Ave. NW, Washington, DC. Biological product (except asphalts diagnostic) manufacturing (NAICS code N.J.A.C. 7:27B–3.13. Procedures for the The Public Reading Room is open from 8:30 a.m. to 4:30 p.m., Monday through 325414). determination of leak tightness of • Paint and coating manufacturing gasoline delivery vessels Friday, excluding legal holidays. The (NAICS code 325510). N.J.A.C. 7:27B–3.14. Procedures for the direct telephone number for the Public • detection of fugitive volatile organic Reading Room is (202) 566–1744, and Adhesive manufacturing (NAICS compound leaks code 325520).
    [Show full text]
  • Organophosphorus-Tellurium Chemistry: from Fundamentals to Applications
    Organophosphorus-Tellurium Chemistry: From Fundamentals to Applications Andreas Nordheider,a J. Derek Woollinsa and Tristram Chiversb* a. EaStCHEM School of Chemistry, University of St Andrews, St Andrews, Fife, KY16 9ST, UK b. Department of Chemistry, University of Calgary, Calgary, AB, Canada T2N 1N4 CONTENTS 1. Introduction 2. Fundamental Considerations 3. Binary Phosphorus-Tellurium Species 4. Phosphine Complexes of Tellurium Cations 5. Organophosphorus(III)-Tellurium Compounds 5.1 Acyclic Organophosphorus(III)-Tellurium Compounds 5.1.1 With P‒Te‒C Linkages 5.1.2 With P‒Te‒P Linkages 5.2 Organophosphorus(III)-Tellurium Heterocycles 5.3 Weak Phosphorus(III)···Tellurium Interactions 6. Organophosphorus(V) Tellurides 6.1 Synthesis and Spectroscopic Characterization 6.2 NMR Spectra and Phosphorus-Tellurium Exchange 6.3 X-Ray Structures 6.4 Bonding and Electronic Structure 6.5 Reaction with Electrophiles and Redox Behavior 6.6 Coordination Complexes 6.7 Applications as Tellurium-Transfer Reagents 7 Anionic Phosphorus-Tellurium Ligands 7.1 Tellurophosphates 7.2 Tellurophosphinites and Ditellurophosphinates 7.3 Telluroimidophosphinites, Tellurobisimidophosphinates. Mono- and Di- telluroimidodiphosphinates 7.3.1 Alkali-Metal Derivatives 1 7.3.2 Redox Chemistry 7.3.3 p-Block, d-Block and f-Block Metal Complexes 7.4 PCP-Bridged Tellurium-Centered Anions 7.5 A Carbon-Bridged P‒Te‒Al Heterocycle 7.6 Tellurium-Centered Anions Supported by a P2N2 Ring 7.6.1 Alkali-Metal Derivatives 7.6.2 Redox Chemistry 7.6.3 p-Block Metal Complexes 8 Single-Source Precursors for Metal Telluride Thin Films 9 Conclusions and Prospects 10 Acknowledgments 11 Addendum Author Information Corresponding Author Notes Biographies Abbreviations Dedication References 2 1.
    [Show full text]
  • Manufacture of Cadmium Mercury Telluride
    Europâisches Patenta mt ® COÏ) EuropeanEur°Pean Patent Office ® Publication number: 0 040 939 Office européen des brevets B1 ® EUROPEAN PATENT SPECIFICATION ® Date of publication of patent spécification: 02.01 .85 ® '"t. Cl.4: C 30 B 25/02, C 30 B 29/48 ® Application number: 81302178.9 (22) Dateoffiling: 15.05.81 (54) Manufacture of cadmium mercury telluride. (30) Priority: 27.05.80 GB 8017334 ® Proprietor: The Secretary of State for Defence in Her Britannic Majesty's Government of The United Kingdom of Great Britain and (43) Date of publication of application: Northern Ireland Whitehall 02.12.81 Bulletin 81/48 London SW1 A 2HB (GB) (4jj) Publication ofthe grant of the patent: (7?) Inventor: Irvine, Stuart James Curzon 02.01 .85 Bulletin 85/01 14 Pixief ield, Cradley Malvern Worcestershire WR13 5ND (GB) Inventor: Mullin, John Brian (§) Designated Contracting States: The Hoo, Brockhill Road DE FR IT NL Malvern Worcestershire WR14 4DO (GB) (5B) References cited: @ Representative: Edwards, John Brian et al US-A-3 218 203 Procurement Executive Ministry of Defence US-A-3 664 866 Patents 1 A (4), Room 2014 Empress State US-A-3 725 135 Building Lillie Road London SW6 1TR (GB) J. Electrochem. Soc: Solid State Science & Technology, May 1981, pp. 1142-1144 Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid.
    [Show full text]