DOCSLIB.ORG

California State University, Northridge A

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
California State University, Northridge A CALIFORNIA STATE UNIVERSITY, NORTHRIDGE A COMPREHENSIVE MODEL OF FREQUENCY DISPERSION OF GALLIUM NITRIDE MESFET A graduate project submitted in partial fulfillment of the requirements For the degree of Master of Science in Electrical Engineering By Rumman Raihan August 2018 Copyright by Rumman Raihan 2018 ii The graduate project of Rumman Raihan is approved: …………………………………….. ……………. Dr. Sembiam Rengarajan Date ……………………………………. …………….. Dr. Jack Ou Date ……………………………………… …………… Dr. Somnath Chattopadhyay, Chair Date California State University, Northridge iii ACKNOWLEDGEMENT At the very beginning, I would like to express my best and foremost gratitude towards Dr. Somnath Chattopadhyay for his help and guidance not just in this project, but also throughout my entire Graduate study period. He opened the door of his vast knowledge towards me and I am very much thankful to him for letting me work under his supervision. I also forward my gratitude towards Dr. Sembiam Rengarajan and Dr. Jack Ou to be on the graduate committee and spending their valuable time to guide me throughout the project. I express my love and gratitude to my mother and my family, my uncle Mr. Mohammad Islam and his family for their mental and financial support. iv DEDICATION This work is dedicated to my departed father Mr. K. M. Nur-ul-Alam (may his soul rest in peace) and my loving mother Mrs. Nilufa Akter. v TABLE OF CONTENTS COPYRIGHT PAGE..…………………………………………………………….............ii SIGNATURE PAGE..….…………………………………………………………...........iii ACKNOWLEDGEMENT…………………………………………………......................iv DEDICATION.....................................................................................................................v TABLE OF CONTENTS..………………………………………………………..............vi LIST OF FIGURES......................…………………………………………………........viii LIST OF TABLES..............................................................................................................ix ABSTRACT....………………………………………………………………………..…...x CHAPTER 1 1.1 INTRODUCTION ……………………………………………………………...…….1 1.2 FREQUENCY PERFORMANCE BETWEEN GaN AND SiC DEVICES …………3 1.3 SWITCHING PERFORMANCE BETWEEN GaN AND SiC DEVICES …………..5 1.4 POWER PERFORMANCE BETWEEN GaN AND SiC DEVICES …………...........8 1.5 GaN SUBSTRATE PREFERANCES ..........................................................................9 1.5.1 Sapphire .......................................................................................................10 1.5.2 SiC................................................................................................................11 1.5.3 Silicon...........................................................................................................11 1.5.4 Diamond........................................................................................................11 1.6 GaN IN OPTOELECTRONIC DEVICES...................................................................11 1.7 ADVANTAGES OF GALLUIM NITRIDE MATERIAL …….................................11 1.8 COMPARISON OF GALLIUM NITRIDE FETS......................................................13 1.9 APPLICATIONS OF GALLIUM NITRIDE DEVICES…………………………….14 1.9.1 Point of load converters.…………………………………………………...14 1.9.2 Monolithic motor drive.……………………………………………………14 1.9.3 Discrete motor drive.……………………………............………………....14 1.9.4 Automotive applications…………………………………………………...14 vi 1.10 RADIATION EFFECT ON GaN.............................................................................14 1.10.1 Damage in GaN for different types Radiations.........................................15 1.10.2 Comparison of radiation hardness between GaN and SiC.........................16 CHAPTER 2 2.1 GALLIUM NITRIDE MATERIAL PROPERTIES………………………………....18 2.2 FUNDAMENTAL PROPERTIES………………………………………………......19 2.3 BAND STRUCTURE..................................................................................................20 2.4 ENERGY BAND GAP................................................................................................22 2.5 ENERGY BANDGAP VERSUS LATTICE CONSTANT COMPARISON.............23 2.6 INTRINSIC CARRIER CONCENTRATION............................................................23 2.7 P-N JUNCTION BUILT-IN POTENTIAL.................................................................25 CHAPTER 3 3.1 GALLIUM NITRIDE MESFET DEVICES................................................................26 3.2 GaN MESFET PLANER STRUCTURE.....................................................................26 3.3 OPERATION OF GAN MESFET DEVICES.............................................................27 3.4 BREAKDOWN VOLTAGE........................................................................................28 3.5 ON-STATE RESISTANCE.........................................................................................29 CHAPTER 4 4.1 TRAPPING EFFECT..................................................................................................32 4.2 TRAPPING EFFECT ON I-V CHARACTERISTICS................................................35 4.3 TRAPPING EFFECT ON TRANSCONDUCTANCE...............................................37 4.4 RESULT AND DISCUSSION....................................................................................38 CHAPTER 5 CONCLUSION..................................................................................................................42 REFERENCES..................................................................................................................43 APPENDIX-CODES.........................................................................................................47 vii LIST OF FIGURES Figure 1.1 Areas of applications for silicon, gallium nitride and silicon carbide................4 Figure 1.2 Drift velocity versus applied electric field of different semiconductors............6 Figure 1.3 Drain current versus Drain to source voltage plot for FETs made with different semiconductors....................................................................................................................7 Figure 1.4 Comparison of switching performance among Si, SiC, GaN, GaAs..................7 Figure 1.5 Bandgap versus lattice constants for IV-IV, III-V and II-VI materials ...........10 Figure 1.6 Output characteristics for SiC and GaN devices before and after radiation.....16 Figure 1.7 Drain current vs gate to source voltage plot GaN and SiC devices before and after radiation.....................................................................................................................17 Figure 2.1 GaN wurtzite and zincblende structure............................................................18 Figure 2.2 Band structure of wurtzite GaN........................................................................20 Figure 2.3 Band structure of zincblende GaN...................................................................21 Figure 2.4 GaN crystal structure........................................................................................21 Figure 2.5 Energy bandgap vs temperature for Si, SiC and GaN......................................22 Figure 2.6 Energy bandgap versus lattice constant............................................................23 Figure 2.7: Intrinsic carrier concentration versus temperature..........................................24 Figure 2.8 Built in potential vs temperature......................................................................25 Figure 3.1: Planer structure of a GaN MESFET (simulated)............................................26 Figure 3.2: Comparison of Depletion and Enhancement mode MESFET .......................28 Figure 3.3 Resistance is a lateral junction MESFET.........................................................29 Figure 4.1 A MESFET structure........................................................................................32 Figure 4.2 I-Vds graph........................................................................................................39 Figure 4.3 gm vs Vgs plot for different Vds..........................................................................40 Figure 4.4 gm vs Vgs plot for different channel thickness...................................................41 viii LIST OF TABLES Table 1.1 Physical properties of different semiconductors................................................12 Table 1.2 Comparison between different GaN FETs.........................................................13 Table 2.1 Semiconductor fundamental properties comparison..........................................19 ix ABSTRACT A COMPREHENSIVE MODEL OF FREQUENCY DISPERSION OF GALLIUM NITRIDE MESFET By Rumman Raihan Master of Science in Electrical Engineering A physics based analytical modeling for Gallium Nitride (GaN) MESFET has been developed in this project to calculate drain to source current versus drain to source voltage and the transconductance with and without traps centers using MATLAB software. The drain-bias dependence of trapped carrier concentration has been calculated and incorporated in drain current and transconductance to study the traps behavior on drain current and transconductance. The drain current has been developed by two sets of equations for non-saturation and saturation current components and two current equations have been merged by optimizing different physical parameters. Hence, the current clearly shows linear and non-linear properties to validate the device performance. The transconductance has been derived from the derivative
Load more

Recommended publications
  • A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K
    Purdue University Purdue e-Pubs Department of Electrical and Computer Department of Electrical and Computer Engineering Technical Reports Engineering 12-1-1985 A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K. Bettinger Purdue University Follow this and additional works at: https://docs.lib.purdue.edu/ecetr Bettinger, Mark K., "A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design" (1985). Department of Electrical and Computer Engineering Technical Reports. Paper 551. https://docs.lib.purdue.edu/ecetr/551 This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K. Bettinger TR-EE 85-18 December 1985 School of Electrical Engineering Purdue University West Lafayette, Indiana 47907 A COMPARISON OF E/D-MESFET GALLIUM ARSENIDE AND CMOS SILICON FOR VLSI PROCESSOR DESIGN Mark K. Bettinger TR-EE 85-18 December 1985 ACKNOWLEDGMENTS I acknowledge the guidance and assistance of my major professor, Veljko Milutinovic. He has provided opportunities to learn that I appreciate. I am also indebted to RCA-ATL for their support and guidance as well as their funding. I would also like to thank those at RCA-ATL who have provided assistance: Tom Geigel, Bill Heagerty, Walt Helbig, Wayne Moyers, Jeff Prid- more, and Rich Zeigert. Little of this work would have been completed without the support of my officemates. I also thank my good friend Lee Bissonette for all of her cheerful assistance.
    [Show full text]
  • WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List
    WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List Updated: July 8, 2013 This document contains the list of potential teaming partners for the WIDE BANDGAP POWER SEMICONDUCTOR DEVICES, solicited in RFI-0000004 and is published on ARPA-E eXCHANGE (https://arpa-e-foa.energy.gov), ARPA-E’s online application portal. This list will periodically undergo an update as organizations request to be added to this teaming list. If you wish for your organization to be added to this list please refer to https://arpa-e-foa.energy.gov/ for instructions. By enabling and publishing the WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List, ARPA-E is not endorsing or otherwise evaluating the qualifications of the entities that are self-identifying themselves for placement on this Teaming List. Organization Name Organization Area of Background Website Email Phone Address Type Expertise ABB US Corporate Research Business > 940 Main Campus Center, ABB 1000 [email protected] +1 919 856 Drive, Raleigh NC Inc. Le Tang Employees Grid Power and Automation www.abb.com .com 3878 27606 APEI, Inc. specializes in developing and manufacturing high power density and high efficiency power electronic solutions and products based on wide bandgap (WBG) technologies. APEI, Inc.’s commercial ISO9001 and AS9100 certified Class 1000 manufacturing facility offers custom power substrate manufacturing, power module manufacturing, and microelectronics assembly Technologies manufacturing services. The manufacturing lines have that facilitate been designed to deliver the highest quality product for low-cost, high- those applications that need the best performance and performance, reliability, including a specialization in high temperature and/or plug- electronics manufacturing processes to 400 C.
    [Show full text]
  • NOVEL MODELLING METHODS for MICROWAVE Gaas MESFET DEVICE ZHONG ZHENG a THESIS SUBMITTED for the DEGREE of DOCTOR of PHILOSOPHY
    CORE Metadata, citation and similar papers at core.ac.uk Provided by ScholarBank@NUS NOVEL MODELLING METHODS FOR MICROWAVE GaAs MESFET DEVICE ZHONG ZHENG (M.Eng, University of Science and Technology of China, P.R.C) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2010 i Acknowledgements First of all, I would like to deeply thank my supervisors, Professor Leong Mook Seng and A/Prof. Ooi Ban Leong, who have led me into this interesting world of device modelling, and given me full support for my study. I am here to express my sincere gratitude to them for their patient guidance, invaluable advices and discussions. I believe what I have learnt from them will always lead me ahead. I also want to thank other faculty staffs in NUS Microwave & RF group: Prof Yeo Swee Ping, Prof Li Le-Wei, Dr. Chen Xu Dong, Dr. Guo Yong Xin, Dr. Koen Mouthaan, and Dr. Hui Hon Tat, etc. for their significant guidance and support. I am also very grateful to these supporting staffs in NUS Microwave & RF group: Madam Guo Lin, Mr. Sing Cheng-Hiong and Madam Lee Siew-Choo for their kind assistances in PCB/MMIC fabrication and measurement. My gratitude also goes to all the friends in microwave division, for their kind help and for the wonderful time we shared together. Last but not least, I would like to thank my family, for their endless support and encouragement, which always be the greatest treasure of my life. ii Table of Contents Acknowledgements ……..………………………..……………..…...…………………i Table of Contents ...…………………………...……………………………………….ii Summary ……………………………………...…….…………………………………vi List of Figures……………………………………….……………………………..…viii List of Tables ….……………………………………..………….……………………xiii List of Symbols ……………………………………….……………….….……….….xv Chapter 1 Introduction ........................................................................................
    [Show full text]
  • Transition of Sic MESFET Technology from Discrete Transistors to High Performance MMIC Technology
    Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology J.W. Milligan, J. Henning, S.T. Allen, A.Ward, P. Parikh, R.P. Smith, A. Saxler, Y. Wu, and J. Palmour Cree, Inc., 4600 Silicon Drive, Durham, NC 27703, (919) 313-5564, [email protected] Keywords: SiC, MESFET, MMIC, HPSI, HTOL, GaN Abstract Significant progress has been made in the development of SiC MESFET DEVICE PERFORMANCE SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates. SiC MESFETs continue to mature in performance and MESFETs with a MTTF of over 200 hours when operated at a manufacturing process stability. These devices now TJ =295 °C are presented. High power SiC MMIC amplifiers achieve a power density of approximately 4.0 W/mm and are shown with excellent yield and repeatability using a power added efficiencies greater than 50% on a regular released foundry process. GaN HEMT operating life of over basis. As an example, Figure 2 shows a 1.0 mm gate 500 hours at a TJ =160 °C is shown. Finally, GaN HEMTs with 30 W/mm RF output power density are reported. periphery MESFET operating at 50V producing 4.0 watts of output power at 66% drain efficiency (54% PAE) at 3.5 GHz. INTRODUCTION SiC MESFETs offer significant advantages for next CW Load Pull Data at 3.5 GHz generation commercial and military systems. Increased 40 60 CW Power power density and higher operating voltage enable higher 36 PAE 50 performance, lighter weight, and wider bandwidth systems.
    [Show full text]
  • A Novel 4H-Sic MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
    micromachines Article A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region Hujun Jia *, Mengyu Dong , Xiaowei Wang, Shunwei Zhu and Yintang Yang School of Microelectronics, Xidian University, Xi’an 710071, China; [email protected] (M.D.); [email protected] (X.W.); [email protected] (S.Z.); [email protected] (Y.Y.) * Correspondence: [email protected]; Tel.: +86-029-8820-2562 Abstract: A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure. Keywords: SiC; Metal-Semiconductor Field Effect Transistor (MESFET); heavily doped region; power added efficiency (PAE) Citation: Jia, H.; Dong, M.; Wang, X.; Zhu, S.; Yang, Y. A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and 1. Introduction an Insulated Region. Micromachines The third-generation semiconductor is the development trend of the semiconductor.
    [Show full text]
  • Metal Semiconductor FET - MESFET�
    SMA5111 - Compound Semiconductors Lecture 9 - Metal-Semiconductor FETs - Outline • Device structure and operation Concept and structure:� General structure� Basis of operation; device types� Terminal characteristics Gradual channel approximation w. o. velocity saturation Velocity saturation issues Characteristics with velocity saturation Small signal equivalent circuits High frequency performance • Fabrication technology Process challenges: (areas where heterostructures can make life easier and better) 1. Semi-insulating substrate; 2. M-S barrier gate; 3. Threshold control; 4. Gate resistance; 5. Source and drain resistances Representative sequences: 1. Mesa-on-Epi; 2. Proton isolation; 3. n+/n epi w. recess; 4. Direct implant into SI-GaAs C. G. Fonstad, 3/03 Lecture 9 - Slide 1� BJT/FET Comparison - cont.� Base/ Emitter/ Collector/ Channel Source Drain 0 wB or L Controlled by vEB in a BJT; by vGS in an FET vCE or vDS C. G. Fonstad, 3/03 0 wB or L Lecture 9 - Slide 2 BJT/FET Comparison - cont.� OK, that's nice, but there is more to the� difference than how the barrier is controlled� BJT FET Charge minority majority carriers in base in channel Flow diffusion drift mechanism in base in channel Barrier direct contact change induced control made to base by gate electrode The nature of the current flow, minority diffusion vs� majority drift, is perhaps the most important difference.� C. G. Fonstad, 3/03 Lecture 9 - Slide 3� FET Mechanisms - MOSFET and JFET/MESFET� MOSFET� Induced n-type channel JFET Doped n-type channel C. G. Fonstad, 3/03� Lecture 9 - Slide 4 Junction Field Effect Transistor (JFET)� Reverse biasing the gate-source junction increases depletion width under gate and constricts the n-type conduction path between the source and drain.
    [Show full text]
  • Metal Semiconductor Field Effect Transistors Mesfet Mesfet
    METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS MESFET MESFET MESFET = Metal Semiconductor Field Effect Transistor = Schottky gate FET . The MESFET consists of a conducting channel positioned between a source and drain contact region. The carrier flow from source to drain is controlled by a Schottky metal gate . The control of the channel is obtained by varying the depletion layer width underneath the metal contact which modulates the thickness of the conducting channel and thereby the current. MESFET MESFET The key advantage of the MESFET is the higher mobility of the carriers in the channel as compared to the MOSFET. The disadvantage of the MESFET structure is the presence of the Schottky metal gate. It limits the forward bias voltage on the gate to the turn-on voltage of the Schottky diode. This turn-on voltage is typically 0.7 V for GaAs Schottky diodes. The threshold voltage therefore must be lower than this turn-on voltage. As a result it is more difficult to fabricate circuits containing a large number of enhancement-mode MESFET. Basic Structure GaAs MESFETs are the most commonly used and important active devices in microwave circuits. In fact, until the late 1980s, almost all microwave integrated circuits used GaAs MESFETs. Although more complicated devices with better performance for some applications have been introduced, the MESFET is still the dominant active device for power amplifiers and switching circuits in the microwave spectrum . Basic Structure Schematic and cross section of a MESFET Basic Structure The base material on which the transistor is fabricated is a GaAs substrate. A buffer layer is epitaxially grown over the GaAs substrate to isolate defects in the substrate from the transistor.
    [Show full text]
  • Physics and Performance of Ultra-High-Frequency Field-Effect
    Physics and Performance of Ultra-High-Frequency Field-Effect Transistors Frank Schwierz Technische Universität Ilmenau, Germany Outline • Introduction • RF FET Physics and Design Rules • Performance of RF FETs • Options for Future RF FETs • Conclusion IEEE Electron Device Colloquium Orlando, Feb 21-22 2008 1 What Does Ultra-High Frequency Mean? In this talk: Ultra-High-Frequency = much above 1 GHz Synonymous: - microwave electronics - RF (radio frequency) electronics. In the follwing: ultra-high-frequency = RF Traditionally: - defense related applications clearly dominated Currently: - large consumer markets for RF products - defense related applications Spectrum of civil RF applica- tions, Ref. ITRS 2005. Currently most civil RF applications with large- volume markets operate below 10 GHz. Future applications at higher frequencies are envisaged. 2 Are There Applications Beyond 94 GHz? The THz gap: 300 GHz … 3 THz. Output power of RF sources Ref.: D. L. Woolard et al., Proc IEEE Oct. 2005. Examples for applications in the THz gap: - ultrafast information and communication technology - security (detection of weapons and explosives) - medicine (e.g. cancer diagnosis) -… RF transistors providing useful gain and output power in the THz gap are highly desirable. 3 RF Electronics vs. Mainstream Electronics Mainstream electronics (processors, ASICs, memories) Semiconductors Transistor Types • Si • MOSFETs • For a few applications BJTs RF electronics Semiconductors Transistor Types • III-V compounds based • MESFET - Metal Semiconductor FET on
    [Show full text]
  • Radio Frequency Technologies in Space Applications
    National Aeronautics and Space Administration Radio Frequency Technologies in Space Applications Rosa Leon Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California JPL Publication 10-11 10/10 National Aeronautics and Space Administration Radio Frequency Technologies in Space Applications NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance Rosa Leon Jet Propulsion Laboratory Pasadena, California NASA WBS: 724297.40.49 JPL Project Number: 103982 Task Number: 03.02.13 Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA 91109 http://nepp.nasa.gov This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement by the United States Government or the Jet Propulsion Laboratory, California Institute of Technology. Copyright 2010. California Institute of Technology. Government sponsorship acknowledged. ACKNOWLEDGEMENTS Helpful discussions with Tien Nguyen, Charles Barnes, and Ken Label are gratefully acknowledged. The tables in the appendices showing available devices and vendors in radio frequency (RF) space technology are contributed from previous work by Jonathan Perret and James Skinner. ii TABLE OF CONTENTS
    [Show full text]
  • MOSFET Device Physics and Operation
    1 MOSFET Device Physics and Operation 1.1 INTRODUCTION A field effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts – the source and the drain – where the number of charge carriers in the channel is controlled by a third contact – the gate. In the vertical direction, the gate- channel-substrate structure (gate junction) can be regarded as an orthogonal two-terminal device, which is either a MOS structure or a reverse-biased rectifying device that controls the mobile charge in the channel by capacitive coupling (field effect). Examples of FETs based on these principles are metal-oxide-semiconductor FET (MOSFET), junction FET (JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs). In all cases, the stationary gate-channel impedance is very large at normal operating conditions. The basic FET structure is shown schematically in Figure 1.1. The most important FET is the MOSFET. In a silicon MOSFET, the gate contact is separated from the channel by an insulating silicon dioxide (SiO2) layer. The charge carriers of the conducting channel constitute an inversion charge, that is, electrons in the case of a p-type substrate (n-channel device) or holes in the case of an n-type substrate (p-channel device), induced in the semiconductor at the silicon-insulator interface by the voltage applied to the gate electrode. The electrons enter and exit the channel at n+ source and drain contacts in the case of an n-channel MOSFET, and at p+ contacts in the case of a p-channel MOSFET. MOSFETs are used both as discrete devices and as active elements in digital and analog monolithic integrated circuits (ICs).
    [Show full text]
  • Microwave Characterization of Gaas MESFET and the Verification of Device Model
    CORRESPONDENCE 325 TABLE I and thus 10-flm channel lengths. At 7 MHz the minimum RESULTSOFMEASUREMENTSON SEVERALMULTIPLIER CIRCUITS; THE power dissipation equals 245 mW. A capacitor of maximum POWER-DELAY PRODUCTEQUALSTHE POWERDISSIPATEDBY ONE 70 pF can be driven. Decreasing the channel length to 5 pm CELL TIMES THETIME NEEDEDTO PRODUCEONE OUTPUT BIT (while keeping all other parameters the same) would lead to (THIS IS ONE CLOCK PERIOD) a 14-MHz operation for a power dissipation less than 500 mW. This dissipation level allows for an extension of the circuit to a R“. number XEF 10 XER 6 XER 9 XEX 14 second-order digital filter stage without causing too much of a cooling problem. SUPDIY voltaqe (v) 5 5 7 10 current draw. km) 11 23 35 100 ACKNOWLEDGMENT Power d,ssipatmn (mm 55 115 245 1CW3 The author would like to thank the I. W. O.N.L. for his fellowship. Max. clock frequency (MHz) 2.5 5 7 7 Power delay product (nJ) 1.83 1.92 2.92 11.9 REFERENCES :,, b,t [1] S. L. Freeny, R. B. Kieburtz, K. V. Mina, and S. K. Tewksbury, IEEE Trans. Circuit Theory, vol. CT-18, no. 6, pp. 702-711, 1971. VT– load (v) -1.1 –1.9 -2.2 -3.8 [2] L. B. Jackson, J. F. Kaiser, and H. S. McDonald, IEEE Trans. vT-drl”er (v) +1.2 +0.5 +0.4 +0.5 Audio Electroacotlst., vol. AU-16, pp. 413-421, 1968. [3] J. R. Verjans and R. J. Van Overstraeten, “NENDEP-A simple N- Substrate b,., (v) / -2.
    [Show full text]
  • Complete Analytical Model of Gan Mesfets for High Power and Microwave Frequency Applications
    Complete Analytical Model of GaN MESFETs for High Power and Microwave Frequency Applications A Thesis Submitted to the Department of Electrical and Electronic Engineering in Partial Fulfillment of the Requirements for the Degree of Bachelor of Science in Electrical and Electronic Engineering By Name Student Id. Aysha Siddique Shanta 09221146 Tasneem Rumman Huq 09221147 Daraksha Binte Hossain 09221149 Riaz Mahmood 09221074 Thesis Supervisor: Professor Md. Shafiqul Islam, PhD Department of Electrical and Electronic Engineering BRAC University, Dhaka December 2011 DECLARATION We hereby declare that this thesis is based on the results found by ourselves. Materials of work found by other researcher are mentioned by reference. This thesis, neither in whole nor in part, has been previously submitted for any degree. Aysha Siddique Shanta Tasneem Rumman Huq Daraksha Binte Hossain Riaz Mahmood Signature of Supervisor i ACKNOWLEDGMENT We would like to express our sincere gratitude and appreciation to everyone who made this thesis possible. Most of all, we would like to thank our supervisor, Professor Dr. Md. Shafiqul Islam for his guidance in achieving our thesis objective. It was an honour getting the privilege to work under his supervision. Second, we would like to thank our teacher Mehdi Zahid Sadi for his heartiest assistance and invaluable feedbacks for our thesis. Last, but most importantly, we would specially like to thank our classmates for their support and encouragements. ii TABLE OF CONTENTS DECLARATION ......................................................................................................................
    [Show full text]