DOCSLIB.ORG

Compound Semiconductors on Silicon

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Compound Semiconductors on Silicon Compound Semiconductors on Si|icon For more than 2o years many millions of dol- semiconductor substrate. And, for some time lars have been spent for the growth of galli- the only compound semiconductor that um arsenide and other hetero-materials on showed promise was silicon-germanium, silicon for all the obvious reasons, larger, which does not quite present the same tech- cheaper and higher quality substrates avail- nology challenge, since both elements are in Dr Alan Mills able in quantity (mostly elemental Groups the same Group IV of the Periodic Table and PO Box 4098, Mountain View, IIl-V and II-Vl). Unfortunately most of it was therefore the silicon-germanium material CA 94o4o, USA spent producing either little success or a system may be classed as an alloy rather Tel/fax: +~-65o-968-~383/84~6 E-mail. [email protected] cost in excess of the competing compound than a compound. Compound Semiconductors on Silicon The results of combining these dissimilar materi- will purchase development services from IQE, a als are now in from several research groups and $10 million equity investment by Motorola in they are close to changing the outlook for these IQE, a $14 million three year equity draw down inter group, or hetero-epitaxial processes from facility for IQE and an additional $10 million pur- dim to very promising or even to almost com- chase of warrant options in IQE, extending over mercial, (based on the latest gallium arsenide and five years. gallium nitride on silicon process advances). As reported in III-Vs Review earlier this year, Gallium Arsenide Motorola and IQE have been cooperating to The Motorola process involves the use of high develop the deposition of MBE-grown gallium dielectric-constant oxide-interlayers, such as arsenide on silicon wafers for about one year. strontium titanate (STO), which inhibit reaction This cooperation between Motorola and IQE between the silicon and the epitaxially grown already includes a Custom Evaluation Agreement gallium arsenide layers. If electrical conductivity 2000/~ of a gallium arsenide seed layer are deposited to open to IQE and Motorola customers, a Service to the substrates is required, the STO layer can form a pseudo substrate and Cooperation Agreement in which Motorola be doped with concentrations of up to lOE19 atoms per cm3 of aluminium.The crystalline qual- ity of this STO on silicon is reported to be better than any single crystal STO currently available. Template layer required to prepare Gallium arsenide I/ the surface of STO to accept GaAs Originally, Motorola's interest in this technology was the creation of a compliant substrate for the deposition of epitaxial, high dielectric constant Single crystal STO provides the surface for growing GaAs oxide films on silicon for random access memory devices, a concept previously proposed in 1991 Amorphous SiO2 i~ Amorphous SiO2 layer formed by Cornell Professor, Y.H. Lo. during growth of STO on silicon. decouples the Si from the overlying One of the keys to this type of hetero-epitaxy Silicon substrate I GaAs - absorbs strain associated with and one of the processes developed by Motorola, lattice and temperature mismatch is the formation during growth of a thin silicon dioxide interlayer between the surface layer of III-Vs REVIEW THE ADVANCED SEMICONDUCTOR MAGAZINE VOL~5 - NO 4" MAY 2oo2 30 Compound Semiconductors on Silicon silicon and the mechanical support silicon wafer however, the 20A silicon dioxide layer originally produced in the process was unsuitable for Blurring the boundaries for next generation CMOS applications and has been replaced by an "system on a chip" • Optical • Large wafer STO layer.This thin oxide can be either amor- capabilities f sizes phous or crystalline, but it serves to take the • High speed Integrate the superior • Low cost • High • Volume O stress out of the surface silicon layer and allows electrical and optical > frequency performance of III-V manufacturing the growth of a low stress hetero-epitaxial layer semiconductors with the 02 on the surface. In the case of strontium titanate >, mature Silicon-based technology to create a interlayers, the optimised STO layers are new industry of i • High voltage integrated about 120 A thick, with the silicon dioxide inter- #-"0 • Mature integration semiconductor capability layer thickness reduced to 7 angstroms. circuits • Memories I Following the deposition of the STO layer, at • Microprocessors least 2000A of a gallium arsenide seed layer are Integration at the digital/electromagnetic deposited to form the pseudo substrate, suitable (computation/communications) interface for gallium arsenide device layer growth and pos- sibly other III-V materials on silicon. Rather fortu- itously, a thin silicon dioxide layer, which is com- products to a minimum.According to Thomas The best of both worlds pliant and forms between the silicon and the Hierl, the CTO of IQE plc, the process is produc- STO layer.The STO has a stable cubic structure tion capable, but development volumes are need- ed to corroborate the initial data for repro- above 70 ° Kelvin and it allows the stresses, the ducibility, yields and costs.With suitable demand, thermal interlayer mismatches and the associated scale up to production volumes would be possi- cracking to be eliminated. It also creates the pos- ble by Q1 2003. sibility for lattice engineering, which could be the enabler for new device structures. Currently, With deposition uniformities already similar to only solid sources are used in this MBE deposi- those attained from gallium arsenide on gallium tion process, requiring high temperature arsenide processes (homo-epitaxy), a ramp up to Knudsen Cells to produce the vapourised metals commercial volumes could be accomplished and good control of the gas injection, creating a within one year.The target price for the 6" galli- challenge for solid source MBE technology. um arsenide on silicon wafers is $200 for 6" diameter pseudo substrates versus a reported For process development, IQE used a Gen-2000 price of $300 for 6" gallium arsenide wafers MBE reactor with a 7 x 6" wafer capacity and although pseudo-wafer costs in the development separate III-V and oxide deposition chambers phase are believed to be in the $400 to $600 where the oxide inter-layer and the seed galli- um arsenide layer are grown separately.Various silicon substrate resistivities have been used and 1 tolO ohm-cm material can make good RF power Transistors RF devices. However, the higher resistivity Today's Power Amplifier NITRONEX (1000 to 5000 ohm-cm) float zone silicon sub- Transistors (made in silicon) GaN on Silicon strates may be preferable for high frequency + Limited RF Power ........... 6X to 15X devices, but they have not yet been evaluated. -- In~ufficiem Coverage A~a Power Process uniformities are good with the deposit- + Heat+driven Operating (.'o,ts ed STO layer thicknesses and GaAs MESFET • Ten, of Millions $US spent annual b ........... 2X across the wafer resistivities exhibiting better To Cool Ba~ $laliorls Efficiency than 1% uniformities. + St~lchcd Beyon+l Capahility To realize its low cost potential, a high volume • Highest Failu~ Rm¢ ol Any El~'trical ..... 4X process and product is needed that could pro- COl]iponel~t hi B['S Robustness (up to 50V) vide additional customer feed back.The key fac- * Marginal Signal Qualily tors to support a manufacturable process are Limited N~mix.t of U,crs ......... 3X stated to be minimal operator involvement, full in Coventge Area Linearity process computerization, accurate control of (would not need sidebands) material beams and process parameters and a COMPARATIVE PERFORMANCE nitride power transistors and amplifiers can easily need to keep device re-engineering for existing outperform silicon III-Vs REVIEW THE ADVANCED SEM ICONDUCTOR MAGAZINE VOL 15 - NO 4" MAY 2002 Compound Semiconductors on Silicon Motorola has formed a wholly owned sub- 10°] i i tG°.,0002,i sidiary, Thoughtbeam Inc., headed by Padmasree Warrior as General Manager.Although 'q / Thoughtbeam is an R&D operation without a fab, its goal is to combine the best of the III-V and the silicon worlds. Using the MBE grown :~ I,r "1,'~_SL+I pseudo substrates and depositing the active --E 10o~ SL'2 ~,~d ~llt& device layers by MOCVD, Motorola has already 10.~r~ ~ simula,ti°n compared the performance of their gallium -7.30 -7.25 -7.20 -7.15 30 32 34 36 38 arsenide on silicon FETs with similar gallium qx (l/rim) 20 (degree) arsenide based devices and shown them to have similar characteristics including, mobilities, satu- Reciprocal-space map around the GaN (20ff4) reflection (left) and (9-20 scan (righO show- rated velocities, gate/drain breakdown voltages, ing measurement and simulation. As can be clearly seen in the reciprocal space map the superlattice (5L) peaks are slightly shifted in qx with respect to the main GaN reflection indi- transconductances and RF performance. MES- cating a different a-lattice constant (vertical dashed line) but no relaxation (partial relaxation: FET power amplifiers based on this technology diagonal dashed line). The (9-2(9 scan shows, in addition to the superlattice peaks, Pendell~sungs fringes from the SL and the cap layer, indicating the high quality of the with equivalent power efficiencies have already InGaN/GaN interfaces. been evaluated in cellphone handsets in the Chicago area and were found to be indistin- guishable from those on gallium arsenide range. FETs have already been demonstrated wafers. Future plans include the testing of HBTs based on this process and it is now being and lasers. extended to heterobipolar-devices.To promote high interest levels and participation in their Gallium Nitride gallium arsenide on silicon technology and to reduce development costs for interested The potential for gallium nitride devices covers a parties, Motorola has agreed to allow interested wide range of application areas and includes companies to proceed with process develop- those listed below.
Load more

Recommended publications
  • THE EFFECTS of DEPOSITION CONDITIONS on the MECHANICAL PROPERTIES of TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO
    THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO LIU Presented to the Faculty of the Graduate School of The University of Texas at Arlington in Partial Fulfillment of the Requirement for the Degree of MASTER OF SCIENCE IN MATERIALS SCIENCE AND ENGINEERING THE UNIVERSITY OF TEXAS AT ARLINGTON MAY 2015 Copyright © by Suo Liu 2015 All Rights Reserve ii Acknowledgements Foremost, I would like to express my sincere gratitude to my advisor Dr. Efstathios I. Meletis for the continuous support of my graduate study and research, for his patience, motivation, enthusiasm, and immense knowledge. His guidance helped me in all the time of research and writing of this thesis. Besides my advisor, I would like to thank the rest of my thesis committee, Dr. Fuqiang Liu and Dr. Harry F. Tibbals, for their generous help. My sincere thanks also go to Dr. Jessica Mooney for preparation of the samples used in this study, as well as for training me on the optical profilometer. I thank each and every one of my group members for their advice, their help and their friendship. I thank Yishu Wang for his help with XPS. Last but not least, I would like to thank my family: my parents Dao Feng Xiang and Aiping Liu, for supporting me spiritually throughout my life. April 28, 2015 iii Abstract THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS Suo Liu, M.S. The University of Texas at Arlington, 2015 Supervising Professor: Efstathios I.
    [Show full text]
  • Highly Selective Modification of Silicon Oxide Structures Fabricated by an AFM Anodic Oxidation
    Korean J. Chem. Eng., 25(2), 386-389 (2008) SHORT COMMUNICATION Highly selective modification of silicon oxide structures fabricated by an AFM anodic oxidation Inhee Choi and Jongheop Yi† School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Korea (Received 25 June 2007 • accepted 24 July 2007) Abstract−Anodic oxidation via atomic force microscopy is a promising method for creating submicron-sized silicon dioxide patterns on a local surface. The area patterned by AFM anodic oxidation (AAO) has different chemical prop- erties from the non-patterned area, and thus site-selective modification of patterned surfaces is quite possible. In this study, we combined the AAO with self-assembly method and/or wet chemical etching method for the fabrication of positive and/or negative structures. These locally modified surfaces could be used to the site-selective arrangement and integration of various materials based on a pre-described pattern. Key words: AFM, Anodic Oxidation, Etching, Pattern, Self-assembly INTRODUCTION ification of pre-fabricated silicon oxide structures were successfully achieved by the treatments of organosilanes and etchants. The fabrication of submicron-sized structures, especially those that are silicon-based, has attracted considerable attention due to EXPERIMENTAL the potential applications of such structures, including micro/nano- 1. Materials electromechanical systems (MEMS and NEMS) [1] and miniaturized The following materials and chemicals were used: p-type and devices [2]. For this purpose, a wide variety of fabrication methods <100>-oriented silicon wafers with LPCVD (low pressure chemical have been developed to generate patterns on the nano- and micros- vapor deposition) silicon nitride as a resist, and KOH, IPA (isopropyl cales.
    [Show full text]
  • Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007
    A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL Technical Monitor: R. Matson/F. Posey-Eddy Prepared under Subcontract No. AAT-2-31605-01 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof.
    [Show full text]
  • In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates
    applied sciences Article In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates Elia Marin 1,2 , Matteo Zanocco 1,3 , Francesco Boschetto 1,2, Toshiro Yamamoto 2, Narisato Kanamura 2, Wenliang Zhu 1, Bryan J. McEntire 4 , Bhajanjit Sonny Bal 4, Ryutaro Ashida 5, Osam Mazda 3 and Giuseppe Pezzotti 1,3,6,7,* 1 Ceramic Physics Laboratory, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, Kyoto 606-8585, Japan; [email protected] (E.M.); [email protected] (M.Z.); [email protected] (F.B.); [email protected] (W.Z.) 2 Department of Dental Medicine, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, Kyoto 602-8566, Japan; [email protected] (T.Y.); [email protected] (N.K.) 3 Department of Immunology, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, 465 Kajii-cho, Kawaramachi dori, Kyoto 602-0841, Japan; [email protected] 4 SINTX Technologies Corporation, 1885 West 2100 South, Salt Lake City, UT 84119, USA; [email protected] (B.J.M.); [email protected] (B.S.B.) 5 Shinsei, Co., Shijohei Kawanishi Rikobo, Kyoto 610-0101, Japan; [email protected] 6 Department of Orthopedic Surgery, Tokyo Medical University, 6-7-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023, Japan 7 The Center for Advanced Medical Engineering and Informatics, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan * Correspondence: [email protected] Received: 9 November 2020; Accepted: 14 December 2020; Published: 17 December 2020 Abstract: The performance, durability, and bio-integration of functional biomedical coatings can be enhanced by changing or improving their substrate properties.
    [Show full text]
  • Optimization of Wear Loss in Silicon Nitride (Si3n4)–Hexagonal Boron Nitride (Hbn) Composite Using Doe–Taguchi Method
    Ghalme et al. SpringerPlus (2016) 5:1671 DOI 10.1186/s40064-016-3379-7 CASE STUDY Open Access Optimization of wear loss in silicon nitride (Si3N4)–hexagonal boron nitride (hBN) composite using DoE–Taguchi method Sachin Ghalme1,2*, Ankush Mankar3 and Y. J. Bhalerao4 *Correspondence: [email protected] Abstract 2 Mechanical Engineering Introduction: The contacting surfaces subjected to progressive loss of material Department, Manoharbhai Patel Institute of Engineering known as ‘wear,’ which is unavoidable between contacting surfaces. Similar kind of and Technology, Gondia, phenomenon observed in the human body in various joints where sliding/rolling Maharashtra, India contact takes place in contacting parts, leading to loss of material. This is a serious issue Full list of author information is available at the end of the related to replaced joint or artificial joint. article Case description: Out of the various material combinations proposed for artificial joint or joint replacement Si3N4 against Al2O3 is one of in ceramic on ceramic category. Minimizing the wear loss of Si3N4 is a prime requirement to avoid aseptic loosening of artificial joint and extending life of joint. Discussion and evaluation: In this paper, an attempt has been made to investigate the wear loss behavior of Si3N4–hBN composite and evaluate the effect of hBN addition in Si3N4 to minimize the wear loss. DoE–Taguchi technique is used to plan and analyze experiments. Conclusion: Analysis of experimental results proposes 15 N load and 8 % of hBN addi- tion in Si3N4 is optimum to minimize wear loss against alumina. Keywords: Silicon nitride (Si3N4), Hexagonal boron nitride (hBN), Alumina (Al2O3), Design of experiment (DoE), Taguchi technique Background Mechanical behavior of various machine elements, such as gears, cams, wheels, rails and sealing parts are influenced by the interaction between contact elements and surfaces.
    [Show full text]
  • Yttria-Doped Silicon Nitride
    7"A7-.2/.._--z 3 1176 00162 3579 NASA Technical Memorandum 8152q NASA-TM-8152919800018982 EFFECT OF W AND WC ON THE OXIDATION RESISTANCE OF YTTRIA-DOPED SILICON NITRIDE Susan Schuon Lewis Research Center Cleveland, Ohio • - • • ' b _r • . .. __Tf" , . , , tl, Prepared for the ........ _...." Annual Meeting of the American Ceramic Society f Chicago, Illinois, April 28-30, 1980 N/ A ERRATA NASA Technical Memorandum 81528 EFFECT OF W AND WC ON THE OXIDATION RESISTANCE OF YTTRIA-DOPED SILICON NITRIDE Susan Schuon 1980 The report number should be NASA Technical Memorandum 81529, not 81528. Issued 1-28-81 EFFECT OF W AND WUON THE OXIDATION RESISTANCE OF YTTRIA-DOPED SILICON NITRIDE by Susan Schuon National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio 44135 ABSTRACT The effect of W and WCcontamination on the oxidation and cracking in air of sintered Si3N4 - 8 wlo Y203 ceramics was studied at 500° , 750°, and 1350° C. A mixture of Si3N4 - 8 Y203, milled with alumina balls, was divided into four portions. Three portions were doped with 2 wlo WU, Z wlo W, and 4 wlo W respectively,in order to simulatecontaminationduring milling. The fourth portion was undoped and used on a control. The addition of W or of , WCdid not affect the phase relationships in the system, as all bars with or without additions contained melilite as the major Si-Y-O-N phase after sinter- ing. At 750° C, instability (rapid oxidation and cracking) of W-doped bars ap- pears to have occurred as a result of oxidation of the tungsten-containing melilite phase.
    [Show full text]
  • 3-;0-Y1 E^'Oob
    3-;0-Y1 E^'oob NASA Technical Memorandum 103777 Thermal Shock of Fiber Reinforced Ceramic Matrix Composites Andrew J. Eckel Lewis Research Center Cleveland, Ohio John Z. Gyekenyesi Cleveland State University Cleveland, Ohio Thomas P. Herbell and Edward R. Generazio Lewis Research Center Cleveland, Ohio Prepared for the 15th Annual Conference on Composites and Advanced Ceramics sponsored by the American Ceramic Society Cocoa Beach, Florida, January 13-16, 1991 NASA Trade names or manufacturers' names are used in this report for identification only. This usage does not constitute an official endorsement, either expressed or implied, by the National Aeronautics and Space Administration. THERMAL SHOCK OF FIBER REINFORCED CERAMIC MATRIX COMPOSITES Andrew J. Eckel National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio 44135 John Z. Gyekenyesi Cleveland State University Cleveland, Ohio 44115 Thomas P. Herbell and Edward R. Generazio National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio 44135 ABSTRACT Monolithic silicon carbide and silicon nitride and a Nicalon fiber reinforced silicon carbide composite were subjected to severe thermal shock conditions via impingement of a hydrogen/oxygen flame. Surface heating rates of 1000 'C/sec to 2500 'C/sec were generated. The performance of the monolithic reference materials are compared and contrasted with the significantly greater thermal shock CD resistance of the composite. Ultrasonic and radiographic NDE techniques were used to evaluate integrity Q0 `1J of the composite subsequent to thermal shock. Tensile tests were performed to determine the residual tensile strength and modulus. Physical property changes are discussed as a function of number and severity of thermal shock cycles.
    [Show full text]
  • Gallium Nitride Nanocrystal Formation in Si3n4 Matrix by Ion Synthesis
    Bull Mater Sci (2020) 43:234 Ó Indian Academy of Sciences https://doi.org/10.1007/s12034-020-02181-9Sadhana(0123456789().,-volV)FT3](0123456789().,-volV) Gallium nitride nanocrystal formation in Si3N4 matrix by ion synthesis MANOJ KUMAR RAJBHAR1, SARAVANAN RAJAMANI1, S K SINGH1, SERGEY SURODIN2, DMITRY NIKOLICHEV2, RUSLAN KRYUKOV2, DMITRY KOROLEV2, ALYONA NIKOLSKAYA2, ALEXEY BELOV2, ALEXEY NEZHDANOV2, ALEXEY MIKHAYLOV2, DAVID TETELBAUM2 and MAHESH KUMAR1,* 1 Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342011, India 2 Lobachevsky University, 603950 Nizhny Novgorod, Russia *Author for correspondence ([email protected]) MS received 23 October 2019; accepted 16 March 2020 Abstract. Synthesis of nanoparticles in insulators attracts tremendous attention due to their unique electrical and optical properties. Here, the gallium (Ga) and gallium nitride (GaN) nanoclusters have been synthesized in the silicon nitride matrix by sequential ion implantation (gallium and nitrogen ions) followed by either furnace annealing (FA) or rapid thermal annealing (RTA). The presence of Ga and GaN nanoclusters has been confirmed by Fourier-transform infrared, Raman and X-ray photoelectron spectroscopy. Thereafter, the effect of RTA and FA on the conduction of charge carriers has been studied for the fabricated devices. It is found from the current–voltage measurements that the carrier transport is controlled by the space charge limited current conduction mechanism, and the observed values of parameter m (trap density and the distribution of localized state) for the FA and RTA devices are *2 and *4.1, respectively. This reveals that more defects are formed in the RTA device and that FA provides better performance than RTA from the viewpoint of opto- and nano-electronic applications.
    [Show full text]
  • Surface Modification of Nano-Silicon Nitride with Silane Coupling Agent†
    Asian Journal of Chemistry; Vol. 25, No. 10 (2013), 5589-5592 http://dx.doi.org/10.14233/ajchem.2013.OH29 Surface Modification of Nano-Silicon Nitride with Silane Coupling Agent† 1,2,* 1 XIAODONG WANG and XINJUN WAN 1Department of Chemistry and Material Science, Chaohu University, Chaohu 238000, P.R. China 2AnHui Province Key Laboratory of Environment-friendly Polymer Materials, Anhui University, Hefei 230039, P.R. China *Corresponding author: E-mail: [email protected] AJC-13272 In this work, a silane coupling agent was used for surface modification of native nano-sized silicon nitride (Si3N4) powder. According to the spectra of FT-IR and TGA, it can be inferred that this coupling agent covalently bonds on the surface of nano-Si3N4 particles and an organic coating layer was formed. The surface free energy experiments showed that the hydrophobic property of nano-Si3N4 modified with coupling agent was improved obviously. Analysis of nanoparticle size and TEM revealed that the modified nano-Si3N4 possessed good dispersibility and the average diameter was less than 100 nm. Key Words: Silicon nitride, Surface modification, Nanocomposite, Dispersibility. INTRODUCTION EXPERIMENTAL Composite materials are composed of metallic, inorganic The silicon nitride powder used in this study was a non-metallic or polymer material and they are a kind of multi- commercial product from Kaier Nano-materials Co. Ltd., phase materials, which possess a superior cooperative perfor- Hefei, P.R. China with following characteristics: average mance. Composite materials based on polymer with nano-size particle size 20-40 nm, specific surface area > 115 m2·g-1, is a kind of inorganic-organic composite materials and the total oxygen < 0.62 % (wt).
    [Show full text]
  • Development of New Matrix and Interfacial Materials for Ceramic Matrix Composites Gavin C
    University of Connecticut OpenCommons@UConn Doctoral Dissertations University of Connecticut Graduate School 8-26-2014 Development of New Matrix and Interfacial Materials for Ceramic Matrix Composites Gavin C. Richards University of Connecticut - Storrs, [email protected] Follow this and additional works at: https://opencommons.uconn.edu/dissertations Recommended Citation Richards, Gavin C., "Development of New Matrix and Interfacial Materials for Ceramic Matrix Composites" (2014). Doctoral Dissertations. 522. https://opencommons.uconn.edu/dissertations/522 Development of New Matrix and Interfacial Materials for Ceramic Matrix Composites Gavin C. Richards, PhD University of Connecticut, 2014 Pre-ceramic polymers are attractive, low cost materials for the manufacture of ceramic fibers and matrix materials in Ceramic Matrix Composites (CMCs). A new pre-ceramic polymer, an ethanol-modified polyvinylsilazane (PVSZ), was synthesized and characterized. The PVSZ polymer has been previously shown to be a viable precursor for silicon nitride and silicon carbide based ceramics, but lacked stability when exposed to air. The PVSZ polymer was synthesized via the ammonolysis of trichlorovinylsilazane in tetrahydrofuran (THF), and then reacted with ethanol to form the ethanol-modified PVSZ. The PVSZ polymer and ethanol- modified PVSZ resin were each characterized with Attenuated Total Reflectance spectroscopy (ATR), 1H Nuclear Magnetic Resonance ( 1H-NMR), and Gel Permeation Chromatography (GPC), Thermogravimetric Analysis (TGA), Residual Gas Analysis (RGA), and X-Ray Powder Diffraction (XRD) of the ceramic char after pyrolysis in various atmospheres. A second new modified PVSZ was also synthesized. Rather than use ethanol, a second silane monomer was added during synthesis, with the intent of stabilizing the polymer without incorporating oxygen. The new end cap modified PVSZ (EC-PVSZ) was characterized using the same methods outlined for the ethanol-modified PVSZ.
    [Show full text]
  • A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K
    Purdue University Purdue e-Pubs Department of Electrical and Computer Department of Electrical and Computer Engineering Technical Reports Engineering 12-1-1985 A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K. Bettinger Purdue University Follow this and additional works at: https://docs.lib.purdue.edu/ecetr Bettinger, Mark K., "A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design" (1985). Department of Electrical and Computer Engineering Technical Reports. Paper 551. https://docs.lib.purdue.edu/ecetr/551 This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. A Comparison of E/D-MESFET Gallium Arsenide and CMOS Silicon for VLSI Processor Design Mark K. Bettinger TR-EE 85-18 December 1985 School of Electrical Engineering Purdue University West Lafayette, Indiana 47907 A COMPARISON OF E/D-MESFET GALLIUM ARSENIDE AND CMOS SILICON FOR VLSI PROCESSOR DESIGN Mark K. Bettinger TR-EE 85-18 December 1985 ACKNOWLEDGMENTS I acknowledge the guidance and assistance of my major professor, Veljko Milutinovic. He has provided opportunities to learn that I appreciate. I am also indebted to RCA-ATL for their support and guidance as well as their funding. I would also like to thank those at RCA-ATL who have provided assistance: Tom Geigel, Bill Heagerty, Walt Helbig, Wayne Moyers, Jeff Prid- more, and Rich Zeigert. Little of this work would have been completed without the support of my officemates. I also thank my good friend Lee Bissonette for all of her cheerful assistance.
    [Show full text]
  • WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List
    WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List Updated: July 8, 2013 This document contains the list of potential teaming partners for the WIDE BANDGAP POWER SEMICONDUCTOR DEVICES, solicited in RFI-0000004 and is published on ARPA-E eXCHANGE (https://arpa-e-foa.energy.gov), ARPA-E’s online application portal. This list will periodically undergo an update as organizations request to be added to this teaming list. If you wish for your organization to be added to this list please refer to https://arpa-e-foa.energy.gov/ for instructions. By enabling and publishing the WIDE BANDGAP POWER SEMICONDUCTOR DEVICES Teaming List, ARPA-E is not endorsing or otherwise evaluating the qualifications of the entities that are self-identifying themselves for placement on this Teaming List. Organization Name Organization Area of Background Website Email Phone Address Type Expertise ABB US Corporate Research Business > 940 Main Campus Center, ABB 1000 [email protected] +1 919 856 Drive, Raleigh NC Inc. Le Tang Employees Grid Power and Automation www.abb.com .com 3878 27606 APEI, Inc. specializes in developing and manufacturing high power density and high efficiency power electronic solutions and products based on wide bandgap (WBG) technologies. APEI, Inc.’s commercial ISO9001 and AS9100 certified Class 1000 manufacturing facility offers custom power substrate manufacturing, power module manufacturing, and microelectronics assembly Technologies manufacturing services. The manufacturing lines have that facilitate been designed to deliver the highest quality product for low-cost, high- those applications that need the best performance and performance, reliability, including a specialization in high temperature and/or plug- electronics manufacturing processes to 400 C.
    [Show full text]