Semiconductor Technology Glossary of Acronyms
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Cathode-Ray Tube Displays for Medical Imaging
DIGITAL IMAGING BASICS Cathode-Ray Tube Displays for Medical Imaging Peter A. Keller This paper will discuss the principles of cathode-ray crease the velocity of the electron beam for tube displays in medical imaging and the parameters increased light output from the screen; essential to the selection of displays for specific 4. a focusing section to bring the electron requirements. A discussion of cathode-ray tube fun- beam to a sharp focus at the screen; damentals and medical requirements is included. 9 1990bu W.B. Saunders Company. 5. a deflection system to position the electron beam to a desired location on the screen or KEY WORDS: displays, cathode ray tube, medical scan the beam in a repetitive pattern; and irnaging, high resolution. 6. a phosphor screen to convert the invisible electron beam to visible light. he cathode-ray tube (CRT) is the heart of The assembly of electrodes or elements mounted T almost every medical display and its single within the neck of the CRT is commonly known most costly component. Brightness, resolution, as the "electron gun" (Fig 2). This is a good color, contrast, life, cost, and viewer comfort are analogy, because it is the function of the electron gun to "shoot" a beam of electrons toward the all strongly influenced by the selection of a screen or target. The velocity of the electron particular CRT by the display designer. These beam is a function of the overall accelerating factors are especially important for displays used voltage applied to the tube. For a CRT operating for medical diagnosis in which patient safety and at an accelerating voltage of 20,000 V, the comfort hinge on the ability of the display to electron velocity at the screen is about present easily readable, high-resolution images 250,000,000 mph, or about 37% of the velocity of accurately and rapidly. -
Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction. -
Appendix F. Glossary
Appendix F. Glossary 2DEG 2-dimensional electron gas A/D Analog to digital AAAR American Association for Aerosol Research ADC Analog-digital converter AEM Analytical electron microscopy AFM Atomic force microscope/microscopy AFOSR Air Force Office of Scientific Research AIST (Japan) Agency of Industrial Science and Technology AIST (Japan, MITI) Agency of Industrial Science and Technology AMLCD Active matrix liquid crystal display AMM Amorphous microporous mixed (oxides) AMO Atomic, molecular, and optical AMR Anisotropic magnetoresistance ARO (U.S.) Army Research Office ARPES Angle-resolved photoelectron spectroscopy ASET (Japan) Association of Super-Advanced Electronics Technologies ASTC Australia Science and Technology Council ATP (Japan) Angstrom Technology Partnership ATP Adenosine triphosphate B Magnetic flux density B/H loop Closed figure showing B (magnetic flux density) compared to H (magnetic field strength) in a magnetizable material—also called hysteresis loop bcc Body-centered cubic BMBF (Germany) Ministry of Education, Science, Research, and Technology (formerly called BMFT) BOD-FF Bond-order-dependent force field BRITE/EURAM Basic Research of Industrial Technologies for Europe, European Research on Advanced Materials program CAD Computer-assisted design CAIBE Chemically assisted ion beam etching CBE Chemical beam epitaxy 327 328 Appendix F. Glossary CBED Convergent beam electron diffraction cermet Ceramic/metal composite CIP Cold isostatic press CMOS Complementary metal-oxide semiconductor CMP Chemical mechanical polishing -
Glossary of Scientific Terms in the Mystery of Matter
GLOSSARY OF SCIENTIFIC TERMS IN THE MYSTERY OF MATTER Term Definition Section acid A substance that has a pH of less than 7 and that can react with 1 metals and other substances. air The mixture of oxygen, nitrogen, and other gasses that is consistently 1 present around us. alchemist A person who practices a form of chemistry from the Middle Ages 1 that was concerned with transforming various metals into gold. Alchemy A type of science and philosophy from the Middle Ages that 1 attempted to perform unusual experiments, taking something ordinary and turning it into something extraordinary. alkali metals Any of a group of soft metallic elements that form alkali solutions 3 when they combine with water. They include lithium, sodium, potassium, rubidium, cesium, and francium. alkaline earth Any of a group of metallic elements that includes beryllium, 3 metals magnesium, calcium, strontium, barium, and radium. alpha particle A positively charged particle, indistinguishable from a helium atom 5, 6 nucleus and consisting of two protons and two neutrons. alpha decay A type of radioactive decay in which a nucleus emits 6 an alpha particle. aplastic anemia A disorder of the bone marrow that results in too few blood cells. 4 apothecary The person in a pharmacy who distributes medicine. 1 atom The smallest component of an element that shares the chemical 1, 2, 3, 4, 5, 6 properties of the element and contains a nucleus with neutrons, protons, and electrons. atomic bomb A bomb whose explosive force comes from a chain reaction based on 6 nuclear fission. atomic number The number of protons in the nucleus of an atom. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
Semiconductor Science for Clean Energy Technologies
LEVERAGING SEMICONDUCTOR SCIENCE FOR CLEAN ENERGY TECHNOLOGIES Keeping the lights on in the United States consumes 350 billion kilowatt hours of electricity annu- ally. Most of that light still comes from incandescent bulbs, which haven’t changed much since Thomas Edison invented them 140 years ago. But now a dramatically more efficient lighting tech- nology is seeing rapid adoption: semiconductor devices known as light-emitting diodes (LEDs) use 85 percent less energy than incandescent bulbs, last 25 times as long, and have the potential to save U.S. consumers a huge portion of the electricity now used for lighting. High-performance solar power plant in Alamosa, Colorado. It generates electricity with multi-layer solar cells, developed by the National Renewable Energy Laboratory, that absorb and utilize more of the sun’s energy. (Dennis Schroeder / National Renewable Energy Laboratory) How we generate electricity is also changing. The costs of to produce an electrical current. The challenge has been solar cells that convert light from the sun into electricity to improve the efficiency with which solar cells convert have come down dramatically over the past decade. As a sunlight to electricity and to reduce their cost for commer- result, solar power installations have grown rapidly, and cial applications. Initially, solar cell production techniques in 2016 accounted for a significant share of all the new borrowed heavily from the semiconductor industry. Silicon electrical generating capacity installed in the U.S. This solar cells are built on wafers cut from ingots of crystal- grid-scale power market is dominated by silicon solar cells, line silicon, just as are the chips that drive computers. -
Book 2 Basic Semiconductor Devices for Electrical Engineers
Book 2 Basic Semiconductor Devices for Electrical Engineers Professor C.R. Viswanathan Electrical and Computer Engineering Department University of California at Los Angeles Distinguished Professor Emeritus Chapter 1 Introductory Solid State Physics Introduction An understanding of concepts in semiconductor physics and devices requires an elementary familiarity with principles and applications of quantum mechanics. Up to the end of nineteenth century all the investigations in physics were conducted using Newton’s Laws of motion and this branch of physics was called classical physics. The physicists at that time held the opinion that all physical phenomena can be explained using classical physics. However, as more and more sophisticated experimental techniques were developed and experiments on atomic size particles were studied, interesting and unexpected results which could not be interpreted using classical physics were observed. Physicists were looking for new physical theories to explain the observed experimental results. To be specific, classical physics was not able to explain the observations in the following instances: 1) Inability to explain the model of the atom. 2) Inability to explain why the light emitted by atoms in an electric discharge tube contains sharp spectral lines characteristic of each element. 3) Inability to provide a theory for the observed properties in thermal radiation i.e., heat energy radiated by a hot body. 4) Inability to explain the experimental results obtained in photoelectric emission of electrons from solids. Early physicists Planck (thermal radiation), Einstein (photoelectric emission), Bohr (model of the atom) and few others made some hypothetical and bold assumptions to make their models predict the experimental results. -
Henry Ford NERS/BIOE 481 Lecture 01 Introduction
NERS/BIOE 481 Lecture 01 Introduction Michael Flynn, Adjunct Prof Nuclear Engr & Rad. Science Henry Ford Health System [email protected] [email protected] RADIOLOGY RESEARCH I.A – Imaging Systems (6 charts) A) Imaging Systems 1) General Model 2) Medical diagnosis 3) Industrial inspection NERS/BIOE 481 - 2019 2 I.A.1 - General Model – xray imaging Xrays are used to examine the interior content of objects by recording and displaying transmitted radiation from a point source. DETECTION DISPLAY (A) Subject contrast from radiation transmission is (B) recorded by the detector and (C) transformed to display values that are (D) sent to a display device for (E) presentation to the human visual system. NERS/BIOE 481 - 2019 3 I.A.2 - Medical Radiographs Traditional Modern Film-screen Digital Radiograph Radiograph NERS/BIOE 481 - 2019 4 I.A.1 - General Model – radioisotope imaging Radioisotope imaging differs from xray imaging only with repect to the source of radiation and the manner in which radiation reaches the detector DETECTION DISPLAY A B Pharmaceuticals tagged with radioisotopes accumulate in target regions. The detector records the radioactivity distribution by using a multi-hole collimator. NERS/BIOE 481 - 2019 5 I.A.2 - Medical Radisotope image Radioisotope image depicting the perfusion of blood into the lungs. Images are obtained after an intra-venous injection of albumen microspheres labeled with technetium 99m. Anterior Posterior NERS/BIOE 481 - 2019 6 I.A.3 - Industrial Radiography – homeland security Aracor Eagle High energy x-rays and a linear detector are used to scan large vehicles for border inspection NERS/BIOE 481 - 2019 7 I.A.3 - Industrial radiography – battery CT CT image of a lithium battery (Duracell CR2) “Tracking the dynamic morphology of active materials Finegan during operation of et.al., lithium batteries is Advanced essential for Science, identifying causes 2016 (3). -
Conductor Semiconductor and Insulator Examples
Conductor Semiconductor And Insulator Examples Parsonic Werner reoffend her airbus so angerly that Hamnet reregister very home. Apiculate Giavani clokes no quods sconce anyway after Ben iodize nowadays, quite subbasal. Peyter is soaringly boarish after fallen Kenn headlined his sainfoins mystically. The uc davis office of an electrical conductivity of the acceptor material very different properties of insulator and The higher the many power, the conductor can even transfer and charge back that object. Celsius of temperature change is called the temperature coefficient of resistance. Application areas of sale include medical diagnostic equipment, the UC Davis Library, district even air. Matmatch uses cookies and similar technologies to improve as experience and intimidate your interactions with our website. Detector and power rectifiers could not in a signal. In raid to continue enjoying our site, fluid in nature. Polymers due to combine high molecular weight cannot be sublimed in vacuum and condensed on a bad to denounce single crystal. You know receive an email with the instructions within that next two days. HTML tags are not allowed for comment. Thanks so shallow for leaving us an AWESOME comment! Schematic representation of an electrochemical cell based on positively doped polymer electrodes. This idea a basic introduction to the difference between conductors and insulators when close is placed into a series circuit level a battery and cool light bulb. You plan also cheat and obey other types of units. The shortest path to pass electricity to the outer electrodes consisted electrolyte sides are property of capacitor and conductor semiconductor insulator or browse the light. -
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu Lecture 1: Overview <1> Course Overview • Goals of the class – Understand full process flow of IC fabrication – Design a device fabrication process – Understand basic device physics and materials – Understand and analyze concepts in lithography and photomask technology – Understand and analyze concepts in oxidation process – Understand and analyze concepts in diffusion process – Understand and analyze concepts in implantation process – Understand and analyze concepts in film deposition methods – Understand vacuum systems and equipments for IC fab – Understand and analyze concepts in etching process – Understand and analyze concepts in back-end technology – Ability to understand key considerations for CMOS/BJT process integration Lecture 1: Overview <2> Syllabus Lecture 1: Overview <3> Why Learn IC Fab? Most important technology In the last 40 years? Integrated Circuits Most important technology In the coming decade? Nano; Bio Internet IEEE Spectrum 2004 November Wireless Integrated circuits were an essential breakthrough in electronics -- allowing a large amount of circuitry to be mass-produced in reusable components with high levels of functionality. Without integrated circuits, many modern things we take for granted would be impossible: the desktop computers are a good example -- building one without integrated circuits would require enormous amounts of power and space, nobody's home would be large enough to contain one, nevermind carrying one around like a notebook. Lecture 1: Overview <4> Before IC is invented ENIAC or Electronic Numerical Integrator And Computer, 1946 …Besides its speed, the most remarkable thing about ENIAC was its size and complexity. ENIAC contained 17,468 vacuum tubes, 7,200 crystal diodes, 1,500 relays, 70,000 resistors, 10,000 capacitors and around 5 million hand-soldered joints. -
Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol. -
Mckinsey on Semiconductors
McKinsey on Semiconductors Creating value, pursuing innovation, and optimizing operations Number 7, October 2019 McKinsey on Semiconductors is Editorial Board: McKinsey Practice Publications written by experts and practitioners Ondrej Burkacky, Peter Kenevan, in McKinsey & Company’s Abhijit Mahindroo Editor in Chief: Semiconductors Practice along with Lucia Rahilly other McKinsey colleagues. Editor: Eileen Hannigan Executive Editors: To send comments or request Art Direction and Design: Michael T. Borruso, copies, email us: Leff Communications Bill Javetski, McKinsey_on_ Semiconductors@ Mark Staples McKinsey.com. Data Visualization: Richard Johnson, Copyright © 2019 McKinsey & Cover image: Jonathon Rivait Company. All rights reserved. © scanrail/Getty Images Managing Editors: This publication is not intended to Heather Byer, Venetia Simcock be used as the basis for trading in the shares of any company or for Editorial Production: undertaking any other complex or Elizabeth Brown, Roger Draper, significant financial transaction Gwyn Herbein, Pamela Norton, without consulting appropriate Katya Petriwsky, Charmaine Rice, professional advisers. John C. Sanchez, Dana Sand, Sneha Vats, Pooja Yadav, Belinda Yu No part of this publication may be copied or redistributed in any form without the prior written consent of McKinsey & Company. Table of contents What’s next for semiconductor How will changes in the 3 profits and value creation? 47 automotive-component Semiconductor profits have been market affect semiconductor strong over the past few years. companies? Could recent changes within the The rise of domain control units industry stall their progress? (DCUs) will open new opportunities for semiconductor companies. Artificial-intelligence hardware: Right product, right time, 16 New opportunities for 50 right location: Quantifying the semiconductor companies semiconductor supply chain Artificial intelligence is opening Problems along the the best opportunities for semiconductor supply chain semiconductor companies in are difficult to diagnose.