The Atomic and Electronic Structure of Dislocations in Ga Based Nitride Semiconductors Imad Belabbas, Pierre Ruterana, Jun Chen, Gérard Nouet
The atomic and electronic structure of dislocations in Ga based nitride semiconductors Imad Belabbas, Pierre Ruterana, Jun Chen, Gérard Nouet To cite this version: Imad Belabbas, Pierre Ruterana, Jun Chen, Gérard Nouet. The atomic and electronic structure of dislocations in Ga based nitride semiconductors. Philosophical Magazine, Taylor & Francis, 2006, 86 (15), pp.2245-2273. 10.1080/14786430600651996. hal-00513682 HAL Id: hal-00513682 https://hal.archives-ouvertes.fr/hal-00513682 Submitted on 1 Sep 2010 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Philosophical Magazine & Philosophical Magazine Letters For Peer Review Only The atomic and electronic structure of dislocations in Ga based nitride semiconductors Journal: Philosophical Magazine & Philosophical Magazine Letters Manuscript ID: TPHM-05-Sep-0420.R2 Journal Selection: Philosophical Magazine Date Submitted by the 08-Dec-2005 Author: Complete List of Authors: BELABBAS, Imad; ENSICAEN, SIFCOM Ruterana, Pierre; ENSICAEN, SIFCOM CHEN, Jun; IUT, LRPMN NOUET, Gérard; ENSICAEN, SIFCOM Keywords: GaN, atomic structure, dislocations, electronic structure Keywords (user supplied): http://mc.manuscriptcentral.com/pm-pml Page 1 of 87 Philosophical Magazine & Philosophical Magazine Letters 1 2 3 4 The atomic and electronic structure of dislocations in Ga 5 6 based nitride semiconductors 7 8 9 10 11 12 1,3 1 2 1 13 I.
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