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Mm-Wave Sige Soc: E & D Band TRX Front-End for P2P Radio Links

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Mm-Wave Sige Soc: E & D Band TRX Front-End for P2P Radio Links WS-01 Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging http://tima.univ-grenoble-alpes.fr/taranto/ Mm-wave SiGe SoC: E & D band TRX front-end for P2P radio links Alessandro Fonte#1, Fabio Plutino#1, Traversa Antonio#1, Pasquale Tommasino#2, Alessandro Trifiletti#2, Saleh Karman#3, Salvatore Levantino#3, Luca Larcher#4, Luca Aluigi#4, Carmine Mustacchio#5, Luigi Boccia#5, Andrea Mazzanti#6, Francesco Svelto#6, Andrea Pallotta#7 #1SIAE MICROELETTRONICA, Italy; #2Università di Roma "La Sapienza", Italy; #3Politecnico di Milano, Italy; #4Università di Modena e Reggio Emilia Italy; #5Universitá della Calabria Italy; #6Università di Pavia, Italy, #7ST-microelectronics, Italy [email protected] Outline • Intro • Application scenario • Project definition and involved partners • Specifications • E-band TX and RX testchips and D-band ext. module • Test board and E-band transitions • E- and D-band building blocks • Conclusions WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 2 - Intro (1/2) • The advent of 4G, and 5G in the future, brings with it a huge amount of traffic data which can saturate existing networks. • Radio spectrum up to 42 GHz has become congested due to the high demand and bands wider than 28/56 MHz are often not available • Up to 42 GHz the maximum channel bandwidth is 112 MHz and, with a very complex modulation (i.e. 4096-QAM), the maximum throughput is about 1Gbps. WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 3 - Intro (2/2) • The rise of the mobile data will trigger the demand for increased bandwidth and spectrum for mobile backhauling • Today the best frequency band to cover these needs is the 70-90 GHz frequency band (E-band) • E-band radio-based equipment set itself up as a suitable solution for several reasons: • the high capacity that can be reached (with 10 GHz of spectrum available); • the possibility to have very large channel bandwidths (up to 2 GHz); • the links are often licensed under a "light license" process so that the licenses can be obtained quickly and cheaply by providing, at a fraction of the cost, the full benefits of traditional link licenses; E band (71–76 and 81–86 GHz) 19 paired, 250MHz-channels (10 GHz BW) WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 4 - Scenario (1/2) • In order to guarantee a future massive deployment, it is necessary to reduce the costs and increase the performance. • Silicon-Germanium BiCMOS technologies will be a breakthrough in the system concept enabling a mixed signal design (mmWave, base band and digital functionalities) based on the same process and embedded into a single chip; ATPC 18GHz Radio 18GHz Radio 1 Gpbs E-band Radio 10 Gpbs E-band Radio Link aggregation: The idea is to use mmWave radio in conjunction with microwave radio in order to enhance network throughput and to guarantee (due to 18GHz link) a higher availability for essential services. WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 5 - Scenario (2/2) • In the coming years the fixed wireless broadband services will be pushed towards higher frequency bands, extending the “spectrum frontier” further beyond 90 GHz, so that additional spectrum will be available to cope with the capacity needs. The D-band (110-170 GHz) can cover this demand D-band Radio more then 10 Gpbs D-band Radio D band (130 – 174 GHz) 122 paired/unpaired 250 MHz- channels (30.5 GHz BW) WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 6 - Project definition and involved partners . Building blocks for a complete E-band (with D-band ext.) radio transceiver front-end in SiGe BiCMOS technology by ST-microelectronics . Integration of all the developed building blocks in a module as a proof of concept: “Advanced multi-GigaBit” E-band radio transceiver front- end for mm-wave back-hauling application . SIAE Microelettronica SPA (Italy) . ST MICROELECTRONICS SRL(Italy) . Università degli studi di Pavia (Italy) . Università degli studi di Modena e Reggio Emilia (Italy) . Politecnico di Milano (Italy) . Università degli studi di Roma La Sapienza (Italy) Università degli Studi di Pavia . Università della Calabria (Italy) WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 7 - Specifications System specifications: • Specifications for E-band RX and TX chains: E-band Receiver: E-band Transmitter: RF input frequency 71 ÷ 86 GHz RF frequency band 71 ÷ 86 BB output frequency I / Q (0 ÷ 2 GHz) IF frequency band DC ÷ 3 GHz IF output frequency I / Q (10.14 ÷ 12.3 GHz) RF output return loss ≥ 10 dB LO input return loss ≥ 10 dB Input matching 10 dB IF input return loss ≥ 10 dB Output impedance 100 ohm (differential) IF input Impedance (I/Q) 100 ohm (differential) Output matching 10 dB -5 dBm … -13 dBm Input signal level RF Input power from -80 dB to -20 dBm (4 QAM … 1024 QAM) RF-VGA dynamic range 26 dB 20 dBm ... 12 dBm Output Power Conversion gain (I+Q) 14 dB (4 QAM ... 1024 QAM) Input IP3 6.5 dBm (@ Gmin) Pmin 0 dBm Conversion Gain 25 dB Noise figure 7.5 dB In band Tx S/N > 137dBc/Hz RF OP1dB ≥ 23 dBm WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 8 - E-band TX and RX testchips • E-band receiver has been defined in order to work both as homodyne and heterodyne receiver; it will provide base-band I and Q differential output signals (0-2 GHz) or I and Q differential output signals around an intermediate frequency (i.e. 11 GHz). • E-band transmitter has been defined in order to work as homodyne transmitter; it will manage base-band I and Q differential input signals, from 0 to 3 GHz. Analog control [V] Analog control [V] Detector 1 Detector 2 Digital z E-band Modulator E-band PA E-band Demodulator control* I+ H I+ z G O z z H p 2 H H G Transition Q Transition 1 t I I- G G N A I- 2 Mixer & ÷ Mixer T 7 7 : : + N I ÷ I U 8 0 I 8 0 - : BUFFER & ÷ 0 1 O F PA ÷ ÷ VLNA T 3 = = Q+ R F T T Q - U 0 0 Q+ G U U R 7 7 O O O H = = f f I F N : z : I Q- R f Q- f A B Q I Q T T U U O O O 2 L O 2 L I C I C ILOx6 0 / 90° ILOx6 0 / 90° ) z ) Buffer Optional H Buffer z Optional H G 7 G 8 7 Digital ÷ 8 Digital Buffer 8 ÷ Buffer . 8 0 . 6 0 ( 6 ( interface interface LO in f =12.8 ÷ 15.3 GHz LO in fLO=12.8 ÷ 15.3 GHz LO RX X-Band PLL X-Band PLL TX External External DCO DPLL DCO DPLL reference reference Buffer Oscil. Buffer Oscil. (100 MHz) (100 MHz) WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 9 - D-band TX extension module • SiGe D-band TX extension module has been defined in order to up- convert the E-band TX output signal at D-band • Key challenges addressed: • Validation of PDK models • Optimization of passive components (capacitors, inductors, TLINEs) • Development of design and verification flow Analog control [V] Detector 1 Detector 2 D-band section Detector 2 E-band Modulator E-band PA D-band Up-converter I+ O Analog control [V] Detector 1 Detector 2 Detector 2 p Transition t I Mixer N A I- Mixer D-band Up-converter E-band Modulator N : : E-band PA I I&Q IN 0 I RF OUT I+ O O I F & ÷ RF-OUT PA N PA p p R Transition 3 t t Mixer Q+ B A fRF=130 ÷ 174 GHz : I- Q Mixer : : G I 8 0 RF OUT z & ÷ H ÷ D-band TX PA I 3 Q+ fRF=130 ÷ 174 GHz H 1 z G Q Q- WR6 4 G H T z G z Q- H WR6 H U 7 G Q z extension molule 8 O 7 f=60.8 ÷ 87 GHz E-band radio 8 ÷ F ÷ LO OUT1 R 5 T 0 6 r in ST SiGe U 7 = e e l f t O f = b i F Buffer a h O s 2 s R transmitter in ST DCO x6 s L f 0 / 90° SPI DPLL e I C #1 a s p BiCMOS 55nm a registers y h B ILOx6 0 / 90° x6 12.6 ÷ 14.5 GHz p ) Quartz Buffer Buffer z Optional XO DCO H SiGe BiCMOS 55nm (114 MHz) (10.14÷14.5GHz) (60.8÷87GHz) G #2 7 8 Digital Buffer ÷ 10.14 ÷ 12.6 GHz 8 . SPI & BIAS 0 6 ILOx6 ( LO OUT2 interface Buffer fC=10.8 ÷ 14.5 GHz LO fLO_OUT2=10.14 ÷ 14.5 GHz Buffer Buffer LO & SYNT LO in fLO=12.8 ÷ 15.3 GHz Ext LO in fLO_IN=10.14 ÷ 14.5 GHz SPI controls X-Band PLL fLO=9.75 ÷ 14.5 GHz LO External TX DCO DPLL reference Buffer Oscil. (100 MHz) WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging - 10 - Developed test-board • A test-board has been designed on TX LO IN 13.9 GHz RX LO IN 13.9 GHz 3.5 GHz OUT 13.9 GHz OUT Rogers substrate.
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