Crystal Oscillator Circuits
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Crystal Oscillators 1
Crystal oscillators 1. Objectives The aim of the exercise is to get acquainted with issues concerning the generation of waveforms (including sinewaves) in the basic structures of crystal generators. In addition, the exercise aims to familiarize with surface mount technique SMT (Surface Mount Technology/ Technics or SMD – Surface mounting Devices). 2. Components and instrumentation. In the exercise, it is possible to test quartz generators operating in the three simplest and most popular system structures: • Colpitts-Pierce quartz generator with bipolar transistor, • quartz generator implemented on TTL gates, • quartz generator implemented on CMOS inverters 2.1. Colpittsa-Pierce’s oscillator with bipolar transistor. The Colpitts-Pierce quartz generator system working in parallel resonance is shown in Fig. 1. + UCC Rb C2 XT C1 Re UWY Fig. 1. Colpittsa-Pierce oscillator with BJT. Using, in the system, quartz resonators with resonance values up to several tens of MHz, the elements C1, Re in the generator system can be selected according to the graph shown in Fig.2. RezystorRe [Ohm] Frequency [MHz] Fig. 2. Selection of C1 and Re elements in the Colpitts-Pierce oscillator 2.2. Quartz oscillator implemented using TTL digital IC Fig. 3 presents a diagram of a quartz oscillator implemented using NAND gates in TTL technology. The oscillator works in series resonance. In this system, while maintaining the same resistance values, quartz resonators with a frequency from a few to 10 MHz can be used. 560 1k8 220 220 UWY XT Fig. 3. Cristal oscillator with serial resonance implemented with NAND gates in TTL technology In the laboratory exercise, it is proposed to implement the system using TTL series 74LS00 (pins of the IC are shown in in Fig.4). -
Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University
Marquette University e-Publications@Marquette Master's Theses (2009 -) Dissertations, Theses, and Professional Projects Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University Recommended Citation Stave, Nicholas Jon, "Analysis of BJT Colpitts sO cillators - Empirical and Mathematical Methods for Predicting Behavior" (2019). Master's Theses (2009 -). 554. https://epublications.marquette.edu/theses_open/554 ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR by Nicholas J. Stave, B.Sc. A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Milwaukee, Wisconsin August 2019 ABSTRACT ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR Nicholas J. Stave, B.Sc. Marquette University, 2019 Oscillator circuits perform two fundamental roles in wireless communication – the local oscillator for frequency shifting and the voltage-controlled oscillator for modulation and detection. The Colpitts oscillator is a common topology used for these applications. Because the oscillator must function as a component of a larger system, the ability to predict and control its output characteristics is necessary. Textbooks treating the circuit often omit analysis of output voltage amplitude and output resistance and the literature on the topic often focuses on gigahertz-frequency chip-based applications. Without extensive component and parasitics information, it is often difficult to make simulation software predictions agree with experimental oscillator results. The oscillator studied in this thesis is the bipolar junction Colpitts oscillator in the common-base configuration and the analysis is primarily experimental. The characteristics considered are output voltage amplitude, output resistance, and sinusoidal purity of the waveform. -
Selecting the Optimal Inductor for Power Converter Applications
Selecting the Optimal Inductor for Power Converter Applications BACKGROUND SDR Series Power Inductors Today’s electronic devices have become increasingly power hungry and are operating at SMD Non-shielded higher switching frequencies, starving for speed and shrinking in size as never before. Inductors are a fundamental element in the voltage regulator topology, and virtually every circuit that regulates power in automobiles, industrial and consumer electronics, SRN Series Power Inductors and DC-DC converters requires an inductor. Conventional inductor technology has SMD Semi-shielded been falling behind in meeting the high performance demand of these advanced electronic devices. As a result, Bourns has developed several inductor models with rated DC current up to 60 A to meet the challenges of the market. SRP Series Power Inductors SMD High Current, Shielded Especially given the myriad of choices for inductors currently available, properly selecting an inductor for a power converter is not always a simple task for designers of next-generation applications. Beginning with the basic physics behind inductor SRR Series Power Inductors operations, a designer must determine the ideal inductor based on radiation, current SMD Shielded rating, core material, core loss, temperature, and saturation current. This white paper will outline these considerations and provide examples that illustrate the role SRU Series Power Inductors each of these factors plays in choosing the best inductor for a circuit. The paper also SMD Shielded will describe the options available for various applications with special emphasis on new cutting edge inductor product trends from Bourns that offer advantages in performance, size, and ease of design modification. -
Capacitors and Inductors
DC Principles Study Unit Capacitors and Inductors By Robert Cecci In this text, you’ll learn about how capacitors and inductors operate in DC circuits. As an industrial electrician or elec- tronics technician, you’ll be likely to encounter capacitors and inductors in your everyday work. Capacitors and induc- tors are used in many types of industrial power supplies, Preview Preview motor drive systems, and on most industrial electronics printed circuit boards. When you complete this study unit, you’ll be able to • Explain how a capacitor holds a charge • Describe common types of capacitors • Identify capacitor ratings • Calculate the total capacitance of a circuit containing capacitors connected in series or in parallel • Calculate the time constant of a resistance-capacitance (RC) circuit • Explain how inductors are constructed and describe their rating system • Describe how an inductor can regulate the flow of cur- rent in a DC circuit • Calculate the total inductance of a circuit containing inductors connected in series or parallel • Calculate the time constant of a resistance-inductance (RL) circuit Electronics Workbench is a registered trademark, property of Interactive Image Technologies Ltd. and used with permission. You’ll see the symbol shown above at several locations throughout this study unit. This symbol is the logo of Electronics Workbench, a computer-simulated electronics laboratory. The appearance of this symbol in the text mar- gin signals that there’s an Electronics Workbench lab experiment associated with that section of the text. If your program includes Elec tronics Workbench as a part of your iii learning experience, you’ll receive an experiment lab book that describes your Electronics Workbench assignments. -
Class D Audio Amplifier Application Note with Ferroxcube Gapped Toroid Output Filter
Class D audio amplifier Application Note with Ferroxcube gapped toroid output filter Class D audio amplifier with Ferroxcube gapped toroid output filter The concept of a Class D amplifier has input signal shape but with larger bridge configuration. Each topology been around for a long time, however amplitude. And audio amplifier is spe- has pros and cons. In brief, a half bridge only fairly recently have they become cially design for reproducing audio fre- is potentially simpler,while a full bridge commonly used in consumer applica- quencies. is better in audio performance.The full tions. Due to improvements in the bridge topology requires two half- speed, power capacity and efficiency of Amplifier circuits are classified as A, B, bridge amplifiers, and thus more com- modern semiconductor devices, appli- AB and C for analog designs, and class ponents. cations using Class D amplifiers have D and E for switching devices. For the become affordable for the common analog classes, each type defines which A Class D amplifier works in the same person.The mainly benefit of this kind proportion of the input signal cycle is way as a PWM power supply, except of amplifier is the efficiency, the theo- used to switch on the amplifying device: that the reference signal is the audio retical maximum efficiency of a class D Class A 100% wave instead of the accurate voltage design is 100%, and over 90% is Class AB Between 50% and 100% reference. achieve in practice. Class B 50% Class C less than 50% Let’s start with an assumption that the Other benefits of these amplifiers are input signal is a standard audio line level the reduction in consumption, their The letter D used to designate the class signal.This audio line level signal is sinu- smaller size and the lower weight. -
Effect of Source Inductance on MOSFET Rise and Fall Times
Effect of Source Inductance on MOSFET Rise and Fall Times Alan Elbanhawy Power industry consultant, email: [email protected] Abstract The need for advanced MOSFETs for DC-DC converters applications is growing as is the push for applications miniaturization going hand in hand with increased power consumption. These advanced new designs should theoretically translate into doubling the average switching frequency of the commercially available MOSFETs while maintaining the same high or even higher efficiency. MOSFETs packaged in SO8, DPAK, D2PAK and IPAK have source inductance between 1.5 nH to 7 nH (nanoHenry) depending on the specific package, in addition to between 5 and 10 nH of printed circuit board (PCB) trace inductance. In a synchronous buck converter, laboratory tests and simulation show that during the turn on and off of the high side MOSFET the source inductance will develop a negative voltage across it, forcing the MOSFET to continue to conduct even after the gate has been fully switched off. In this paper we will show that this has the following effects: • The drain current rise and fall times are proportional to the total source inductance (package lead + PCB trace) • The rise and fall times arealso proportional to the magnitude of the drain current, making the switching losses nonlinearly proportional to the drain current and not linearly proportional as has been the common wisdom • It follows from the above two points that the current switch on/off is predominantly controlled by the traditional package's parasitic -
How to Select a Proper Inductor for Low Power Boost Converter
Application Report SLVA797–June 2016 How to Select a Proper Inductor for Low Power Boost Converter Jasper Li ............................................................................................. Boost Converter Solution / ALPS 1 Introduction Traditionally, the inductor value of a boost converter is selected through the inductor current ripple. The average input current IL(DC_MAX) of the inductor is calculated using Equation 1. Then the inductance can be [1-2] calculated using Equation 2. It is suggested that the ∆IL(P-P) should be 20%~40% of IL(DC_MAX) . V x I = OUT OUT(MAX) IL(DC_MAX) VIN(TYP) x η (1) Where: • VOUT: output voltage of the boost converter. • IOUT(MAX): the maximum output current. • VIN(TYP): typical input voltage. • ƞ: the efficiency of the boost converter. V x() V+ V - V L = IN OUT D IN ΔIL(PP)- xf SW x() V OUT+ V D (2) Where: • ƒSW: the switching frequency of the boost converter. • VD: Forward voltage of the rectify diode or the synchronous MOSFET in on-state. However, the suggestion of the 20%~40% current ripple ratio does not take in account the package size of inductor. At the small output current condition, following the suggestion may result in large inductor that is not applicable in a real circuit. Actually, the suggestion is only the start-point or reference for an inductor selection. It is not the only factor, or even not an important factor to determine the inductance in the low power application of a boost converter. Taking TPS61046 as an example, this application note proposes a process to select an inductor in the low power application. -
Spectrum Analyzer Circuits 062-1055-00
Circuit Concepts BOOKS IN THIS SERIES: Circuit Concepts Power Supply Circuits 062-0888-01 Oscilloscope Cathode-Ray Tubes 062-0852-01 Storage Cathode-Ray Tubes and Circuits 062-0861-01 Television Waveform Processing Circuits 062-0955-00 Digital Concepts 062-1030-00 Spectrum Analyzer Circuits 062-1055-00 Oscilloscope Trigger Circuits 062-1056-00 Sweep Generator Circuits 062-1098-00 Measurement Concepts Information Display Concepts 062-1005-00 Semiconductor Devices 062-1009-00 Television System Measurements 062-1064-00 Spectrum Analyzer Measurements 062-1070-00 Engine Analysis 062-1074-00 Automated Testing Systems 062-1106-00 SPECTRUM ANALYZER CIRCUITS BY MORRIS ENGELSON Significant Contributions by GORDON LONG WILL MARSH CIRCUIT CONCEPTS FIRST EDITION, SECOND PRINTING, AUGUST 1969 062-1055-00 ©TEKTRONIX, INC.; 1969 BEAVERTON, OREGON 97005 ALL RIGHTS RESERVED CONTENTS 1 BACKGROUND MATERIAL 1 2 COMPONENTS AND SUBASSEMBLIES 23 3 FILTERS 55 4 AMPLI FI'ERS 83 5 MIXERS 99 6 OSCILLATORS 121 7 RF ATTENNATORS 157 BIBLIOGRAPHY 171 INDEX 175 1 BACKGROUND MATERIAL Many spectrum analyzer circuits are based on principles with which most engineers may not be familiar. It is the purpose of this chapter to review some of this specialized background material. This review is not intended to be either complete or rigorous. Those desiring a more complete discussion are referred to the basic references and the bibliography. TRANSMISSION LINES* At low frequencies the basic circuit elements are lumped. At higher frequencies, however, where the size of circuit elements is comparable to a wavelength, lumped elements can not be used easily, if at all. This accounts for the extensive use of distributed circuits at higher frequencies. -
TSEK03: Radio Frequency Integrated Circuits (RFIC) Lecture 7: Passive
TSEK03: Radio Frequency Integrated Circuits (RFIC) Lecture 7: Passive Devices Ted Johansson, EKS, ISY [email protected] "2 Overview • Razavi: Chapter 7 7.1 General considerations 7.2 Inductors 7.3 Transformers 7.4 Transmission lines 7.5 Varactors 7.6 Constant capacitors TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "3 7.1 General considerations • Reduction of off-chip components => Reduction of system cost. Integration is good! • On-chip inductors: • With inductive loads (b), we can obtain higher operating frequency and better operation at low supply voltages. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "4 Bond wires = good inductors • High quality • Hard to model • The bond wires and package pins connecting chip to outside world may experience significant coupling, creating crosstalk between parts of a transceiver. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "5 7.2 Inductors • Typically realized as metal spirals. • Larger inductance than a straight wire. • Spiral is implemented on top metal layer to minimize parasitic resistance and capacitance. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "6 • A two dimensional square spiral inductor is fully specified by the following four quantities: • Outer dimension, Dout • Line width, W • Line spacing, S • Number of turns, N • The inductance primarily depends on the number of turns and the diameter of each turn TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "7 Magnetic Coupling Factor TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "8 Inductor Structures in RFICs • Various inductor geometries shown below are result of improving the trade-offs in inductor design, specifically those between (a) quality factor and the capacitance, (b) inductance and the dimensions. -
AN826 Crystal Oscillator Basics and Crystal Selection for Rfpic™ And
AN826 Crystal Oscillator Basics and Crystal Selection for rfPICTM and PICmicro® Devices • What temperature stability is needed? Author: Steven Bible Microchip Technology Inc. • What temperature range will be required? • Which enclosure (holder) do you desire? INTRODUCTION • What load capacitance (CL) do you require? • What shunt capacitance (C ) do you require? Oscillators are an important component of radio fre- 0 quency (RF) and digital devices. Today, product design • Is pullability required? engineers often do not find themselves designing oscil- • What motional capacitance (C1) do you require? lators because the oscillator circuitry is provided on the • What Equivalent Series Resistance (ESR) is device. However, the circuitry is not complete. Selec- required? tion of the crystal and external capacitors have been • What drive level is required? left to the product design engineer. If the incorrect crys- To the uninitiated, these are overwhelming questions. tal and external capacitors are selected, it can lead to a What effect do these specifications have on the opera- product that does not operate properly, fails prema- tion of the oscillator? What do they mean? It becomes turely, or will not operate over the intended temperature apparent to the product design engineer that the only range. For product success it is important that the way to answer these questions is to understand how an designer understand how an oscillator operates in oscillator works. order to select the correct crystal. This Application Note will not make you into an oscilla- Selection of a crystal appears deceivingly simple. Take tor designer. It will only explain the operation of an for example the case of a microcontroller. -
AN-400 a Study of the Crystal Oscillator for CMOS-COPS
AN-400 A Study Of The Crystal Oscillator For CMOS-COPS Literature Number: SNOA676 A Study of the Crystal Oscillator for CMOS-COPS AN-400 National Semiconductor A Study of the Crystal Application Note 400 Oscillator for Abdul Aleaf August 1986 CMOS-COPSTM INTRODUCTION TABLE I The most important characteristic of CMOS-COPS is its low A. Crystal oscillator vs. external squarewave COP410C power consumption. This low power feature does not exist change in current consumption as a function of frequen- in TTL and NMOS systems which require the selection of cy and voltage, chip held in reset, CKI is d4. low power IC's and external components to reduce power I e total power supply current drain (at VCC). consumption. Crystal The optimization of external components helps decrease the power consumption of CMOS-COPS based systems Inst. cyc. V f ImA even more. CC ckI time A major contributor to power consumption is the crystal os- 2.4V 32 kHz 125 ms 8.5 cillator circuitry. m Table I presents experimentally observed data which com- 5.0V 32 kHz 125 s83 pares the current drain of a crystal oscillator vs. an external 2.4V 1 MHz 4 ms 199 squarewave clock source. 5.0V 1 MHz 4 ms 360 The main purpose of this application note is to provide ex- perimentally observed phenomena and discuss the selec- External Squarewave tion of suitable oscillator circuits that cover the frequency Inst. cyc. range of the CMOS-COPS. V f I CC ckI time Table I clearly shows that an unoptimized crystal oscillator draws more current than an external squarewave clock. -
Crystals Load Capacitance Calculation And
Load Capacitance PRINTED: 12/21/2012 TYPICAL OSCILLATOR CIRCUIT OSC CELL OSC CELL = oscillator circuit integrated into any IC. Rf = feedback resistor, sometimes integrated in IC or is required as external resistor Rf CLOCK SIGNAL Cg = capacitance of oscillator input for IC internal use Cd = capacitance of oscillator output Rd = Phase shift resistor, necessary at lower frequencies to meet oscillation condition that phase shift all the way around the oscillator loop need to add up to 360°. Y1 = Quartz crystal unit C1 and C1 = external load capacitors. CPCB1 and CPCB2 = stray capacitances of PCB traces Cg Cd The total LOAD CAPACITANCE of the oscillator circuit is the sum of all capacitances. OSC IN OSC OUT consisting of: 1. The two external capacitors (here called C1 and C2) 2. The IC input and output capacitances (here called Cg and Cd) 3. The stray capacitances of PCB traces (here called CPCB1 and CPCB2) CPCB1 Rd Commonly being only the values of the external capacitors known so that a correct calculation of the actual load capacitance is not possible. SIGNAL OUTPUT OPTIONALCLOCK In such case we use simlified formula to calculate the load capacitance as: C1 C2 CL C TOTAL C1 C2 STRAY CPCB2 Here C1 and C2 are the external capacitors in the cricuit, values should be known. Cstray is summarized value for IC input and output capacitance and the PCB traces. Y1 Cstray in a 3.3VDC circuit is often 3~4pF. C1 C2 Cstray in a 5.0VDC circuit often 5~7pF. However, we have also seen circuits that had large deviation from these values.