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Coupling in a Dual Metallo-Dielectric Nanolaser System

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Coupling in a Dual Metallo-Dielectric Nanolaser System 4760 Vol. 42, No. 22 / November 15 2017 / Optics Letters Letter Coupling in a dual metallo-dielectric nanolaser system 1 1 2 1 1, SURUJ S. DEKA, SI HUI PAN, QING GU, YESHAIAHU FAINMAN, AND ABDELKRIM EL AMILI * 1Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407, USA 2Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, USA *Corresponding author: [email protected] Received 14 September 2017; revised 23 October 2017; accepted 24 October 2017; posted 25 October 2017 (Doc. ID 306989); published 15 November 2017 To achieve high packing density in on-chip photonic overlap and, hence, the Joule loss. Additionally, the metal integrated circuits, subwavelength scale nanolasers that should also aid in isolating the electromagnetic field inside each can operate without crosstalk are essential components. resonator from the surrounding environment. Whether the Metallo-dielectric nanolasers are especially suited for this isolation provided can prevent crosstalk between optical com- type of dense integration due to their lower Joule loss ponents for purposes of dense integration on chip, however, is and nanoscale dimensions. Although coupling between op- yet to be explored to the best of our knowledge. tical cavities when placed in proximity to one another has The observation of coupling between non-metal based been widely reported, whether the phenomenon is induced optical cavities when placed in proximity of each other has been for metal-clad cavities has not been investigated thus far. widely reported in a host of systems such as photonic crystal We demonstrate coupling between two metallo-dielectric nanocavities [12,13], photonic molecule microdisk lasers nanolasers by reducing the separation between the two [14–18], microring lasers [19,20], ridge lasers [21], and porous cavities. A split in the resonant wavelength and quality fac- silicon based microcavities [22]. Though coupling can rely on tor is observed, caused by the creation of bonding and anti- varying types of physics to occur, the most commonly reported bonding supermodes. To preserve the independence of the form is based on evanescent interaction between the electro- two closely spaced cavities, the resonance of one of the magnetic fields of the individual resonators which results in cavities is detuned relative to the other, thereby preventing a characteristic splitting of the observed optical modes in both coupling. © 2017 Optical Society of America frequency and loss [12,14,17,18,23]. This bifurcation arises OCIS codes: (130.3120) Integrated optics devices; (250.5300) due to the presence of bonding and anti-bonding states in Photonic integrated circuits; (140.3325) Laser coupling; (140.0140) the coupled system, the latter of which generally exhibits lower Lasers and laser optics. losses and, hence, becomes the lasing mode. These supermodes can then give rise to new functionalities, for instance such as https://doi.org/10.1364/OL.42.004760 possible use in memory due to bistable behavior exhibited by the anti-bonding mode [12,18]. However, for nanoscale devices, if the primary goal is to achieve high packing density Future integrated photonic chips would necessitate coherent for on-chip design, it is essential that the individual cavities light sources with ultra-compact footprints and low power con- composing the coupled system can operate independently from one another. This would allow one laser to be operated or sumptions. Many efforts have already been made to realize such ’ subwavelength scale nanolasers, albeit the emitters have been modulated without interfering in its neighbor s emission behav- implemented based on a myriad of cavity designs, including ior. Since metal-clad nanolasers are ideally suited for this type of those based on photonic crystal [1–3], metallo-dielectric [4–7], dense integration due to their subwavelength and nanoscale coaxial metal [8], and plasmonic cavities or spasers [9–11]. dimensions, whether coupling is induced when two such de- Usually, shrinking the size of the resonator in all three vices are designed near one another needs to be investigated. dimensions leads to a spatial spreading of the optical mode In this Letter, we report the effect of gradually reducing the beyond the resonator’s physical boundaries which induces an separation between two metallo-dielectric nanolasers using increase in optical loss and threshold. In metallo-dielectric three-dimensional finite-element method simulations. In con- nanolasers, this limitation is overcome by cladding the active trast to expectations that the metal should inhibit coupling, a medium with a combination of a dielectric shield and metal splitting of the optical modes in both the resonance wave- layer [5]. The metal cladding helps confine the optical mode length, λ, and quality factor, Q, is observed for the coupled to the high index active core, thereby increasing the mode-gain metallo-dielectric nanolaser system akin to what is reported overlap while the dielectric shield pushes the electromagnetic in coupled microcavities [14,20]. The split is caused by the mode away from the metal walls, thus reducing the mode-metal creation of bonding and anti-bonding states, as the distance 0146-9592/17/224760-04 Journal © 2017 Optical Society of America Letter Vol. 42, No. 22 / November 15 2017 / Optics Letters 4761 Fig. 2. Electric field intensity profile across the side (top row) and top (bottom row) cross sections of the dual-cavity nanolaser system. (a) Distance between the dielectric shields is 90 nm and the system supports two identical modes. (b) Shields are now in contact, and Fig. 1. Schematic of the dual-cavity system with the constituent an anti-bonding supermode is created with strong confinement of materials labeled. The heights of the gain, SiO2 cladding, airgap, the electromagnetic mode to the gain medium of each resonator. and radius of the gain are represented by hInGaAsP, hSiO2, hAir and (c) New bonding mode is created for the same separation as in (b), rInGaAsP respectively. The distance, d, between the dielectric shields but the mode is poorly confined to the gain regions for this state. is the parameter changed during a parametric sweep to probe the char- acteristics of the modes. The bonding state, shown in Fig. 2(c), demonstrates poor con- between the dielectric shields of the nanolasers is decreased. finement of the mode to the gain media of the two resonators Since the two nanoresonators share the same metal cladding, with a significant portion of the field interaction seen to be it is not possible to engineer any changes in the metal coating occurring in the dielectric shields. In contrast, the anti-bonding for one without affecting the other. Therefore, a method is pre- state in Fig. 2(b) still shows the mode to be strongly confined to sented whereby slight detuning of one of the cavity resonances the gain medium of each resonator. In fact, the mode profile of can prevent the phenomenon of coupling from occurring and, the anti-bonding state is nearly identical in appearance to thereby, preserve the independence of the two nanolasers. when the cavities support independent modes of their own Figure 1 shows a representative schematic of the dual-cavity when designed far apart, as seen in Figs. 2(b) and 2(a), system to be simulated. The gain medium is composed of bulk respectively. InGaAsP modeled with a height of hInGaAsP 300 nm, radius To further elucidate the impact of coupling between the two ε rInGaAsP 225 nm, and permittivity of gain 11.56 [5]. cavities, d was varied in an eigenfrequency solver module of λ Each gain was conformally cladded with SiO2 of height COMSOL Multiphysics. The eigenmode wavelength, , and hSiO2 100 nm, selected to minimize the gain threshold of quality factor, Q, for the modes supported by the system the nanolaser. Additionally, an airgap of hAir 400 nm height, are calculated for each d. As seen in Fig. 3(a), the wavelengths below the gain layer, was designed to provide optimal mode for the two modes supported by the system are nearly identical confinement. Finally, the cavities were covered with a 1 μm to each other when the two cavities are placed far enough apart; layer of Ag. The permittivities for the SiO2, air, and Ag material the same can be said for the quality factor shown in Fig. 3(b). ε ε ε layers were taken to be dielectric 2.16, air 1, and silver Therefore, only intercavity spacings up to 60 nm are plotted for −130 − 3i [24], respectively, with the values chosen considering better contrast. In fact, this behavior is expected, since the the eigenmode wavelength supported by the nanocavity design modes supported in these high-separation designs are a pair (around 1.55 μm) and assuming room temperature operation. To study the effect of reducing the separation, d, between the dielectric shields of the two cavities composing the dual system, we first consider two cases—when the cavities are far apart at 90 nm and when they are in contact at 0 nm. For each separation distance, the electric field intensity across a two-dimensional side and top cross section of the gain was recorded. Figure 2 illustrates the side and top profiles of the magnitude of the electric field of the TE011 mode supported by each nanocavity for the two separations mentioned. For the case of d 90 nm, the metal between the two cavities pre- vents the electromagnetic fields inside each resonator from in- teracting with one another. In other words, the evanescent field from each cavity is allowed adequate space to decay exponen- tially due to damping by the metal, thereby producing little to no interaction of fields in the metallic region. This isolation can be clearly seen in Fig.
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