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MBR40H100WTG Switch-Mode Power Rectifier 100 V, 40 A

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MBR40H100WTG Switch-Mode Power Rectifier 100 V, 40 A MBR40H100WTG Switch-mode Power Rectifier 100 V, 40 A Features and Benefits http://onsemi.com • Low Forward Voltage • Low Power Loss/High Efficiency SCHOTTKY BARRIER • High Surge Capacity RECTIFIER • 175°C Operating Junction Temperature 40 AMPERES • 40 A Total (20 A Per Diode Leg) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 100 VOLTS Compliant 1 Applications 2, 4 • Power Supply − Output Rectification 3 • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in 1 TO−247 • Weight: 4.3 Grams (Approximately) 2 CASE 340AL 3 • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: MARKING DIAGRAM 260°C Max. for 10 Seconds MAXIMUM RATINGS Please See the Table on the Following Page B40H100 AYWWG B40H100 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR40H100WTG TO−247 30 Units/Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2014 − Rev. 5 MBR40H100WT/D MBR40H100WTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A TC = 148°C, per Diode 20 TC = 150°C, per Device 40 Peak Repetitive Forward Current IFRM 40 A (Square Wave, 20 kHz) TC = 144°C Nonrepetitive Peak Surge Current IFSM 200 A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Controlled Avalanche Energy (see test conditions in Figures 10 and 11) WAVAL 400 mJ ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case RqJC 0.58 °C/W − Junction−to−Ambient (Socket Mounted) RqJA 32 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS Characterisitc Symbol Min Typ Max Unit Instantaneous Forward Voltage (Note 2) vF V (IF = 20 A, TJ = 25°C) − 0.74 0.80 (IF = 20 A, TJ = 125°C) − 0.61 0.67 (IF = 40 A, TJ = 25°C) − 0.85 0.90 (IF = 40 A, TJ = 125°C) − 0.72 0.76 Instantaneous Reverse Current (Note 2) iR mA (Rated dc Voltage, TJ = 125°C) − 2.0 10 (Rated dc Voltage, TJ = 25°C) − 0.0012 0.01 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR40H100WTG TYPICAL CHARACTERISTICS 100 100 175°C 175°C 150°C 25°C 150°C 25°C 10 10 125°C 125°C 1.0 1.0 0.1 0.1 00.1 0.20.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 00.1 0.20.3 0.4 0.50.60.7 0.8 0.9 1.0 1.1 1.2 , INSTANTANEOUS FORWARD CURRENT (A) FORWARD , INSTANTANEOUS , INSTANTANEOUS FORWARD CURRENT (A) FORWARD , INSTANTANEOUS F F I I VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 1.0E−01 TJ = 150°C 1.0E−02 TJ = 150°C 1.0E−02 ° 1.0E−03 1.0E−03 TJ = 125 C TJ = 125°C 1.0E−04 1.0E−04 1.0E−05 1.0E−05 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−06 , REVERSE CURRENT (A) R I 1.0E−07 1.0E−07 , MAXIMUM REVERSE CURRENT (A) R 1.0E−08 I 1.0E−08 0 20 40 60 80 100 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 32 20 dc 18 RqJA = 16°C/W 28 16 24 Square Wave dc 14 20 12 Square Wave 16 10 8.0 12 6.0 8.0 4.0 dc 4.0 RqJA = 60°C/W , AVERAGE FORWARD CURRENT (A) FORWARD , AVERAGE 2.0 No Heatsink Square Wave 0 0 F(AV) 120 130140 150 160 170 180 I 0 25 50 75 100 125150 175 , AVERAGE FORWARD CURRENT (A) FORWARD , AVERAGE F I ° TC, CASE TEMPERATURE ( C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case, Per Leg Figure 6. Current Derating, Ambient, Per Leg http://onsemi.com 3 MBR40H100WTG TYPICAL CHARACTERISTICS 30 10000 28 TJ = 25°C TJ = 175°C 24 Square Wave 20 1000 16 dc 12 100 8.0 C, CAPACITANCE (pF) C, CAPACITANCE 4.0 , AVERAGE POWER DISSIPATION (W) POWER DISSIPATION , AVERAGE 0 10 F(AV) P 0 4.0 8.0 12 16 20 24 28 30 0 2040 60 80 100 IF(AV), AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 7. Forward Power Dissipation Figure 8. Capacitance 10 D = 0.5 1 0.2 0.1 0.1 0.05 0.01 P(pk) 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 R(t), TRANSIENT THERMAL RESISTANCE 0.000001 0.00001 0.0001 0.001 0.010.1 1 10 100 1000 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case http://onsemi.com 4 MBR40H100WTG +VDD IL 10 mH COIL BV VD DUT MERCURY ID SWITCH I ID DUT L S1 VDD t0 t1 t2 t Figure 10. Test Circuit Figure 11. Current−Voltage Waveforms The unclamped inductive switching circuit shown in elements are small Equation (1) approximates the total Figure 10 was used to demonstrate the controlled avalanche energy transferred to the diode. It can be seen from this capability of this device. A mercury switch was used instead equation that if the VDD voltage is low compared to the of an electronic switch to simulate a noisy environment breakdown voltage of the device, the amount of energy when the switch was being opened. contributed by the supply during breakdown is small and the When S1 is closed at t0 the current in the inductor IL ramps total energy can be assumed to be nearly equal to the energy up linearly; and energy is stored in the coil. At t1 the switch stored in the coil during the time when S1 was closed, is opened and the voltage across the diode under test begins Equation (2). to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at EQUATION (1): BVDUT and the diode begins to conduct the full load current 2 BV which now starts to decay linearly through the diode, and W [ 1 LI ǒ DUT Ǔ AVAL 2 LPK BV V goes to zero at t2. DUT DD By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is EQUATION (2): equal to the energy stored in the inductor plus a finite amount 1 2 of energy from the VDD power supply while the diode is in W [ LI AVAL 2 LPK breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. SCALE 1:1 2. CONTROLLING DIMENSION: MILLIMETERS. SEATING 0.635 M BAM 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. NOTE 4 A B PLANE 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. E P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE A DIMENSIONS ARE MEASURED AT THE OUTERMOST E2/2 EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY Q S L1. E2 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED NOTE 3 BY L1. 4 MILLIMETERS 123 DIM MIN MAX A 4.70 5.30 2X F L1 A1 2.20 2.60 b 1.07 1.33 b2 1.65 2.35 L NOTE 5 b4 2.60 3.40 c 0.45 0.68 D 20.80 21.34 E 15.50 16.25 E2 4.32 5.49 2X b2 c e 5.45 BSC F 2.655 --- b4 A1 L 19.80 20.80 3X b NOTE 7 L1 3.81 4.32 0.25 M BAM P 3.55 3.65 e Q 5.40 6.20 S 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository.
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