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Development and Characterization of Semiconductor Materials by Ion Beams

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Development and Characterization of Semiconductor Materials by Ion Beams IAEA-TECDOC-1292 Development and characterization of semiconductor materials by ion beams Final report of a co-ordinated research project June 2002 The originating Section of this publication in the IAEA was: Physics Section International Atomic Energy Agency Wagramer Strasse 5 P.O. Box 100 A-1400 Vienna, Austria DEVELOPMENT AND CHARACTERIZATION OF SEMICONDUCTOR MATERIALS BY ION BEAMS IAEA, VIENNA, 2002 IAEA-TECDOC-1292 ISSN 1011–4289 © IAEA, 2002 Printed by the IAEA in Austria June 2002 FOREWORD With the aim of promoting research and facilitating more extensive applications of ion beam accelerators for development and characterization of advanced materials, the IAEA established in 1997 a Co-ordinated Research Project (CRP) on Application of MeV Ion Beams for Development and Characterization of Semiconductor Materials. The CRP is based on applications of MeV ion beams for development and characterization of semiconductor materials with the main focus on the correlation between the structure of investigated materials and their physical properties important for their applications in electronic devices. The materials of concern are those currently used (or contemplated) in semiconductor devices, like CuInSe2 and CuIn1-xGaxSe2 thin films, InGaAs/InP heterostructures, GaAs, GaN, LiNbO3, polycrystalline Si, CdTe, CdZnTe, etc. Specific topics include optoelectronic characterization of semiconductor materials and devices by ion microbeams, characterization of thin films, defect transformations in semiconductors, light element analysis in semiconductor materials and microfabrication of semiconductors using ion beams. The first Research Co-ordination Meeting (RCM) was held in Vienna in June 1998, and the second RCM was held in Zagreb, Croatia, in September 2000. This publication includes results obtained from research undertaken prior to the completion of all contracts and agreements under this CRP in 2001. As expected, a large amount of research was stimulated by this CRP and resulted in many publications in scientific journals. For example, the role of grain boundaries in the limitation of charge collection efficiency in CVD (chemical vapour deposition) diamond detectors with respect to natural diamond has been assessed and demonstrated. In addition, conditions for blister formation in GaAs were characterized. Possibilities to create oxygen-enriched layers on the surface of a GaAs single crystal were investigated by implantation of In ions. A ten-fold increase in oxygen atom content was observed in the transparent surface layers. Fabrication and properties of hydrogen and/or erbium containing optical layers in lithium niobate produced by annealed proton exchange were studied. The best electro-optic properties were found with the samples having uniformly distributed lithium atoms and very low content of hydrogen. In addition, this CRP stimulated a number of collaborations between research groups that are expected to last much longer than the CRP itself. This includes associations between persons with very different research backgrounds. Further, a number of participating laboratories have significantly improved their analytical capability for materials characterization. These include developments in Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and ion beam induced charge/ion beam induced luminescence (IBIC/IBIL) setups. The IAEA wishes to thank all the scientists who contributed to the progress of this CRP. The IAEA officer responsible for the CRP and for this publication was S. Fazinic of the Division of Physical and Chemical Sciences. EDITORIAL NOTE This publication has been prepared from the original material as submitted by the authors. The views expressed do not necessarily reflect those of the IAEA, the governments of the nominating Member States or the nominating organizations. The use of particular designations of countries or territories does not imply any judgement by the publisher, the IAEA, as to the legal status of such countries or territories, of their authorities and institutions or of the delimitation of their boundaries. The mention of names of specific companies or products (whether or not indicated as registered) does not imply any intention to infringe proprietary rights, nor should it be construed as an endorsement or recommendation on the part of the IAEA. The authors are responsible for having obtained the necessary permission for the IAEA to reproduce, translate or use material from sources already protected by copyrights. CONTENTS Summary of the co-ordinated research project.........................................................................................1 Characterization of semiconductor and frontier materials by nuclear microprobe technology..............15 Jieqing Zhu, Xiaolin Li, Changyi Yang, Rongrong Lu, Jiqing Wang, Panlin Guo Characterization of semiconductor materials and devices by the IBIC technique .................................27 M. Jakšić, Ž. Pastuović, T. Tadić Real time monitoring of electronic materials and devices using microbeams .......................................41 C. Manfredotti Study of LiNbO3 for optoelectronic applications by ion beam and neutron based analytical techniques....................................................................................................55 J. Špirková , P. Nekvindová, H. Turčičová, J. Vacík, J. Červená, V. Peřina ,V. Hnatowicz Application of Rutherford backscattering and nuclear reaction analysis techniques for investigation of thin films ...................................................................................................................67 Á.Z. Kiss, A. Simon, Z. Elekes, F. Ditrói, S. Mészáros, D.L. Beke, G.A. Langer, L. Daróczy Influence of impurities on silicide contact formation.............................................................................75 Kh.R. Kazdaev, G.B. Meermanov, R. Kh. Kazdaev Ion channeling study of defects in multicomponent semiconductor compounds...................................83 A. Turos, L. Nowicki, A. Stonert Study of impurity migration processes in semiconductors using the RBS, NRA, and ERD techniques........................................................................................................97 L.P. Chernenko, A.Ju. Didyk, A.P. Kobzev, O.A. Nikonov, V.A. Skuratov, M. Kulik , D. Maczka Comparison of the results on the analysis of semiconductor materials by ERDA and RBS methods ..................................................................................................................107 M. Budnar, P. Pelicon, A. Razpet, B. Zorko Study of the composition of CuInSe2 and CuIn1-xGaxSe2 semiconductor thin films prepared by evaporation followed by annealing using RBS and PIXE and their properties.............117 S.M. Firoz Hasan, M. Khaliquzzaman, S. K. Biswas, L. Quadir, M. Asad Shariff, M. Mashiur Rahman Abbreviations .......................................................................................................................................127 Contributors to Drafting and Review ...................................................................................................129 SUMMARY OF THE CO-ORDINATED RESEARCH PROJECT 1. Introduction This CRP was recommended by the Consultants meeting on Ion Beam Techniques Applied to Semiconductor and Related Advanced Materials, held in April 1997 in Vienna. The consultants proposed to have a CRP in the field of application of MeV ion beams for the development and characterization of semiconductor materials. The CRP was approved and a first RCM was held in Vienna between 2–5 June 1998, in order to stimulate ideas and to promote collaborations among CRP participants. The goals and practical outcomes of the CRP were defined and several specific topics were identified including: optoelectronic characterization of semiconductor materials and devices by ion microbeams, characterization of thin films, defect transformations in semiconductors, light element analysis. One important recommendation was that sample exchanges among different laboratories be strongly encouraged. The participants presented individual activities on their projects, all subjects of research were identified and linked with approved individual projects. Collaboration among the participants was discussed and established. Some modifications to work plans were adopted. As proposed during the first RCM, the final RCM was held at the Ruđer Bošković Institute, Zagreb, Croatia, between 25 and 29 September 2000, with the purpose of reviewing/discussing the results achieved during the course of the CRP and to prepare a draft of the final report and associated publication. The exceptional success and the achievements obtained in this CRP and the strength of collaborations that developed among different laboratories was generally noted. 2. Research collaboration within the CRP There were many active international collaborations stimulated by this CRP. These collaborations involved exchanging of samples, computer programs, data bases, ideas, etc. The two tables below indicate some of these collaborations. Table I presents collaboration between CRP participants in the topic of optoelectronic characterization of semiconductor materials and devices using microbeams. Table II is primarly involved with research topics related to characterization of thin films, defect transformations in semiconductors and light element analysis, indicating exchange of samples between different CRP groups. 3.
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