Influence of the Epitaxial Strain on Magnetic Anisotropy in LSMO Thin Films for Spintronics Applications Sandeep Kumar Chaluvadi

Total Page:16

File Type:pdf, Size:1020Kb

Influence of the Epitaxial Strain on Magnetic Anisotropy in LSMO Thin Films for Spintronics Applications Sandeep Kumar Chaluvadi Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications Sandeep Kumar Chaluvadi To cite this version: Sandeep Kumar Chaluvadi. Influence of the epitaxial strain on magnetic anisotropy inLSMO thin films for spintronics applications. Electronics. Normandie Université, 2017. English. NNT: 2017NORMC248. tel-01717569 HAL Id: tel-01717569 https://tel.archives-ouvertes.fr/tel-01717569 Submitted on 26 Feb 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THESE Pour obtenir le diplôme de doctorat Spécialité ELECTRONIQUE, MICROELECTRONIQUE, OPTIQUE ET LASERS, OPTOELECTRONIQUE MICROONDES Préparée au sein de l’ENSICAEN et de l’UNICAEN Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications Présentée et soutenue par Sandeep Kumar CHALUVADI Thèse soutenue publiquement le 13 décembre 2017 devant le jury composé de M. VIRET Michel Chercheur (HDR), CEA Saclay Rapporteur M. BELMEGUENAI Mohamed Maître de conférences (HDR), Université Paris 13 Rapporteur Mme MOUGIN Alexandra Directrice de recherches CNRS, Université Paris 11 Examinateur M. MAZALEYRAT Frédéric Professeur des universités, ENS Cachan Examinateur M. PERNA Paolo Chercheur, IMDEA Madrid Examinateur Mme MECHIN Laurence Directrice de recherches CNRS, Université Caen Normandie Directeur de thèse Thèse dirigée par Laurence MECHIN, laboratoire GREYC (UMR 6072) iii Contents List of Abbreviations ............................................................................................................... vii List of Symbols ......................................................................................................................... ix 1 Introduction ........................................................................................................................ 1 2 Manganite (La1-xSrxMnO3) properties ................................................................................ 5 2.1 Functional oxide perovskites ....................................................................................... 5 2.1.1 Perovskite crystal structure .................................................................................. 5 2.1.2 Phase diagram of La1-xSrxMnO3 .......................................................................... 6 2.1.3 Crystal structure and properties ........................................................................... 7 2.2 Thin films .................................................................................................................... 9 2.2.1 Epitaxy ............................................................................................................... 10 2.2.2 Growth modes .................................................................................................... 11 2.2.2.1 2D or Frank-Van der Merwe or Layer growth ........................................... 11 2.2.2.2 3D or Volmer-Weber or Island growth ...................................................... 11 2.2.2.3 2D + 3D or Stranski - Krastanov or layer + island growth ........................ 11 2.2.3 Thin film growth techniques .............................................................................. 12 2.2.3.1 Pulsed Laser Deposition (PLD) .................................................................. 12 2.2.3.2 Molecular Beam Epitaxy (MBE) ................................................................ 12 2.2.3.3 Reflection High-Energy Electron Diffraction (RHEED) ........................... 14 2.3 Strain engineering ..................................................................................................... 15 2.3.1 How to induce and/or tune strain ....................................................................... 15 2.3.2 Strain engineering due to lattice mismatch ........................................................ 16 2.3.2.1 Orbital occupancy ....................................................................................... 17 2.3.2.2 Octahedral rotations .................................................................................... 18 2.3.2.3 Electrical and magnetic properties ............................................................. 20 3 Magnetic anisotropy and Magneto-Optical Kerr Magnetometry ..................................... 23 3.1 Magnetic Anisotropy ................................................................................................. 23 3.1.1 Why does it matter…? ....................................................................................... 23 3.1.2 Factors influencing magnetic anisotropy ........................................................... 23 3.1.2.1 Shape anisotropy......................................................................................... 23 3.1.2.2 Magnetocrystalline anisotropy ................................................................... 24 3.1.2.3 Magneto-elastic anisotropy ......................................................................... 25 3.1.2.4 Surface anisotropy ...................................................................................... 25 3.1.3 Magnetic anisotropy in bulk La0.7Sr0.3MnO3 ..................................................... 26 3.1.4 Magnetic anisotropy in LSMO thin films .......................................................... 27 iv 3.1.4.1 LSMO on STO substrates ........................................................................... 27 3.1.4.2 LSMO on NGO (110) substrates ................................................................ 30 3.1.4.3 LSMO on LSAT (001) substrates ............................................................... 31 3.1.5 Summary ............................................................................................................ 32 3.2 Magneto-Optical Kerr Magnetometry ....................................................................... 33 3.2.1 MOKE Theory ................................................................................................... 33 3.2.2 MOKE configurations ........................................................................................ 34 3.2.3 Vectorial MOKE set-up @IMDEA Nanociencia, Madrid................................. 35 3.2.4 MOKE set-up @CNR-IOM, Trieste, Italy......................................................... 38 3.2.5 Stoner-Wohlfarth Model .................................................................................... 39 3.2.6 Summary ............................................................................................................ 41 4 Strain-induced by lattice mismatch in LSMO thin films .................................................. 43 4.1 Introduction ............................................................................................................... 43 4.2 Experimental details .................................................................................................. 43 4.3 LSMO films under tensile strain by PLD ................................................................. 45 4.3.1 LSMO on STO (001) ......................................................................................... 45 4.3.2 LSMO on MgO (001) ........................................................................................ 47 4.3.3 LSMO on STO buffered MgO (001) ................................................................. 48 4.4 LSMO films under compressive strain by PLD ........................................................ 50 4.4.1 LSMO on LSAT (001) ....................................................................................... 50 4.4.2 LSMO on NGO (110) ........................................................................................ 51 4.4.3 LSMO on LAO (001)......................................................................................... 53 4.5 Summary: Compressive strain vs. tensile strain........................................................ 54 5 Magnetic anisotropy of LSMO films under tensile strain grown by PLD ....................... 57 5.1 LSMO on STO (001)................................................................................................. 57 5.1.1 Magnetic characterization .................................................................................. 57 5.1.1.1 Angular dependent M (H) loops around characteristic axes @ 300 K ....... 58 5.1.1.2 Angular dependence of remanence @ 300 K ............................................. 59 5.1.1.3 Angular dependence of coercive fields @ 300 K ....................................... 60 5.1.1.4 Temperature-dependent magnetic properties ............................................. 62 5.1.2 Summary ............................................................................................................ 63 5.2 LSMO on STO buffered MgO (001)......................................................................... 64 5.2.1 Magnetic characterization .................................................................................. 64 5.2.1.1 Angular dependent M (H) loops around characteristic
Recommended publications
  • Title of Paper Goes Here
    Template for APEX (Jan. 2014) Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal Jung-Won Chang1, Joon Sung Lee1*, Tae Ho Lee1, Jinhee Kim2, and Yong-Joo Doh1* 1Department of Applied Physics, Korea University Sejong Campus, Sejong 339-700, Republic of Korea 2Korea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea E-mail: [email protected], [email protected] We report controlled formation of sub-100 nm-thin electron channels in SrTiO3 by doping with oxygen vacancies induced by Ar+-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm2V1s1), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics. 1 Template for APEX (Jan. 2014) 1) SrTiO3 (STO) has the potential to become a key ingredient in oxide electronics owing to its intriguing electronic properties in addition to its versatility as a perovskite substrate for oxide heterostructures.2,3) The recent advancement in studies of the low-dimensional electronic system formed at the heterointerface between strontium titanate (STO) and 4) lanthanum aluminate (LaAlO3; LAO) has led to immense development and success in both understanding fundamental physics and developing new oxide electronic devices. When pure and stoichiometric, STO is an insulator with a large band gap of 3.2 eV. However, it can be made into an n-type conductor by substitutional doping with cations5,6) such as Nb and La or by introduction of oxygen vacancies.7) Especially, Ar+-ion irradiation on the crystal surface8-13) introduces oxygen vacancies and enables us to pattern conducting channels selectively on STO substrates using photolithography.
    [Show full text]
  • Manganite-Based Devices: Opportunities, Bottlenecks and Challenges
    Downloaded from http://rsta.royalsocietypublishing.org/ on October 30, 2018 Manganite-based devices: opportunities, bottlenecks and challenges By T. Venkatesan, M. Rajeswari, Zi-Wen Dong, S. B. Ogale and R. Ramesh NSF-MRSEC on Oxides and Surfaces, and Centre for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, USA Since the rejuvenation of interest in the rare earth manganites owing to their poten- tial use as magnetoresistive sensors, there has been adequate research to arrive at some evaluation of the potential for these materials in a variety of technologies that would use the peculiar properties of these materials. The magnetic field sensitivity of the transport properties, the strong metal insulator transition at the Curie temper- ature, the electric field polarizability of the material and its subsequent effect on the transport properties, the half metallicity of the electronic bands, etc., are properties of the rare earth manganites that could be exploited in a variety of devices. In this review we explore the various interesting technological avenues that are being pur- sued and address the uniqueness of the material that may enable a given technology as well as the various bottlenecks that will have to be overcome in order to suc- cessfully compete with the existing technologies. As is the case with many emerging materials technologies, the devices also serve as a vehicle for further understanding of the fundamental mechanisms behind the basic properties of the materials. Keywords:
    [Show full text]
  • (Laalo3)0.3(Sr2taalo6)0.7(001) Richard T
    Single Crystal Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 4. (LaAlO3)0.3(Sr2TaAlO6)0.7(001) Richard T. Haasch, Eric Breckenfeld, and Lane W. Martin Citation: Surface Science Spectra 21, 112 (2014); doi: 10.1116/11.20140904 View online: http://dx.doi.org/10.1116/11.20140904 View Table of Contents: http://scitation.aip.org/content/avs/journal/sss/21/1?ver=pdfcov Published by the AVS: Science & Technology of Materials, Interfaces, and Processing Articles you may be interested in Single Crystal Rare-earth Scandate Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 3. GdScO3(110) Surf. Sci. Spectra 21, 149 (2014); 10.1116/11.20140908 Single Crystal Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 5. NdGaO3(110) Surf. Sci. Spectra 21, 122 (2014); 10.1116/11.20140905 Single Crystal Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 3. LaAlO3(001) Surf. Sci. Spectra 21, 103 (2014); 10.1116/11.20140903 Single Crystal Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 2. YAlO3(110) Surf. Sci. Spectra 21, 95 (2014); 10.1116/11.20140902 Single Crystal Perovskites Analyzed Using X-ray Photoelectron Spectroscopy: 1. SrTiO3(001) Surf. Sci. Spectra 21, 87 (2014); 10.1116/11.20140901 Redistribution subject to AVS license or copyright; see http://scitation.aip.org/termsconditions. Download to IP: 73.15.5.18 On: Sun, 18 Jan 2015 23:45:09 Single Crystal Perovskites Analyzed Using Accession #: 01313 X-ray Photoelectron Spectroscopy: 4. Technique: XPS (LaAlO ) (Sr TaAlO ) (001) Host Material: Single
    [Show full text]
  • Two-Dimensional Electron Layers in Perovskite Oxides Cover
    Two-dimensional electron layers in perovskite oxides Cover Stairstep twinning in lanthanum aluminate (LaAlO3), one of the main constituents of the perovskite heterostructures discussed in this thesis. Image was taken by Michael W. Davidson of the Florida State University and is used with permission. Ph.D. committee Chairman and secretary Prof. dr. G. van der Steenhoven (University of Twente) Supervisor Prof. dr. ing. D.H.A. Blank (University of Twente) Assistant supervisor Dr. ing. A.J.H.M. Rijnders (University of Twente) Members Prof. dr. Ir. H. Hilgenkamp (University of Twente) Prof. dr. P.J. Kelly (University of Twente) Prof. H.Y. Hwang (University of Tokyo, Japan) Prof. J.-M. Triscone (University of Geneva, Switzerland) Prof. dr. J. Aarts (Leiden University) Prof. dr. M.S. Golden (University of Amsterdam) The research described in this thesis was performed with the Inorganic Materials Science group, the MESA+ Research Institute at the University of Twente, the Netherlands and Hwang lab at the University of Tokyo, Japan as a part of the Nanoelectronic Materials flagship (TMM.6996) of the Dutch NanoNed national nanotechnology R&D initiative. This research was supported by NanoNed, a na- tional nanotechnology program coordinated by the Dutch Ministry of Economic Affairs. G.W.J. Hassink Two-dimensional electron layers in perovskite oxides Ph.D. thesis University of Twente, Enschede, the Netherlands. ISBN: 978-90-365-2918-1 DOI: 10.3990/1.9789036529181 Printed by W¨ohrmannPrint Service, Zutphen, the Netherlands Copyright c G.W.J. Hassink, 2009 TWO-DIMENSIONAL ELECTRON LAYERS IN PEROVSKITE OXIDES PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Universiteit Twente, op gezag van de rector magnificus, Prof.
    [Show full text]
  • Preparation and Characterization of Perovskite Structure Lanthanum Gallate and Lanthanum Aluminate Based Oxides
    Preparation and characterization of perovskite structure lanthanum gallate and lanthanum aluminate based oxides Shuai Li Doctoral Thesis Department of Materials Science and Engineering Division of Ceramics Royal Institute of Technology Stockholm, Sweden 2009 Akademisk avhandling som med tillstånd av Kungliga Tekniska Högskolan i Stockholm, framlägges för offentlig granskning för avläggande av teknologie doktorsexamen, fredagen den 12 juni 2009, kl. 10.00 i B2, Brinellvägen 23, KTH, Stockholm. ISRN KTH/MSE--09/18--SE+CER/AVH ISBN 978-91-7415-324-8 Shuai Li Preparation and characterization of perovskite structure lanthanum gallate and lanthanum aluminate based oxides Division of Ceramics Department of Materials Science and Engineering School of Industrial Engineering and Management Royal Institute of Technology SE-100 44 Stockholm Sweden ISRN KTH/MSE--09/18--SE+CER/AVH ISBN 978-91-7415-324-8 © Shuai Li ABSTRACT The present work was initiated to study the synthesis and properties of lanthanum gallate based oxides as intermediate temperature electrolyte for solid oxide fuel cells. The wet chemical method, polymer complexing route, was used to prepare the precursor powders. To further investigate the polymer complexing method, it was also applied to the preparation of lanthanum aluminate based oxides. Single perovskite phase La0.8Sr0.2Ga0.83Mg0.17O2.815 can be prepared by the polymer complexing method using PVA as complexing agent. The thermal decomposition of the precursor powder undergoes three stages. While complete decomposition of the precursor is obtained at 1000°C. Further investigation of LaGaO3 doped with various amounts Sr or/and Mg was conducted. Three secondary phases were identified by X- ray diffraction, e.g.
    [Show full text]
  • Sign Reversal of Magnetoresistance in a Perovskite Nickelate by Electron Doping
    PHYSICAL REVIEW B 94, 235124 (2016) Sign reversal of magnetoresistance in a perovskite nickelate by electron doping Koushik Ramadoss,1,* Nirajan Mandal,2,3 Xia Dai,4 Zhong Wan,2 You Zhou,5 Leonid Rokhinson,2,3,6 Yong P. Chen,2,3,6 Jiangpin Hu,2 and Shriram Ramanathan1 1School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA 2Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA 3Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA 4Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China 5School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA 6School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA (Received 31 July 2016; revised manuscript received 14 November 2016; published 9 December 2016) We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electron-doped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Undoped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear nonsaturating positive MR ∼ 0.2% at 50 K. The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.
    [Show full text]
  • A Thin Film Approach to Engineering Functionality Into Oxides
    J. Am. Ceram. Soc., 91; [8] 2429–2454 (2008) DOI: 10.1111/j.1551-2916.2008.02556.x r 2008 The American Ceramic Society Journal A Thin Film Approach to Engineering Functionality into Oxides Darrell G. Schlom,w,ww,z Long-Qing Chen,z Xiaoqing Pan,y Andreas Schmehl,z,z and Mark A. ZurbuchenJ zDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802-5005 yDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 z Experimentalphysik VI, Elektronische Korrelationen und Magnetismus, Institut fu¨ r Physik, Universita¨ t Augsburg, D- 86159 Augsburg, Germany JThe Aerospace Corporation, Microelectronics Technology Department, El Segundo, California 90245 The broad spectrum of electronic and optical properties exhibited But as every ceramist knows, oxides are an exciting class of by oxides offers tremendous opportunities for microelectronic electronic materials in their own right. Oxides exhibit the full devices, especially when a combination of properties in a single spectrum of electronic, optical, and magnetic behavior: insulat- device is desired. Here we describe the use of reactive molecular- ing, semiconducting, metallic, superconducting, ferroelectric, beam epitaxy and pulsed-laser deposition to synthesize functional pyroelectric, piezoelectric, ferromagnetic, multiferroic, and oxides, including ferroelectrics, ferromagnets, and materials that nonlinear optical effects are all possessed by structurally com- arebothatthesametime.Owingtothedependenceofproperties
    [Show full text]
  • Layer-By-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites § † § † § ‡ † Tassie K
    Research Article Cite This: ACS Appl. Mater. Interfaces 2018, 10, 5949−5958 www.acsami.org Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites § † § † § ‡ † Tassie K. Andersen,*, , Seyoung Cook, , Gang Wan, Hawoong Hong, Laurence D. Marks, § and Dillon D. Fong § Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States † Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States ‡ Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States ABSTRACT: Control over structure and composition of ff (ABO3) perovskite oxides o ers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cation’s stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system. KEYWORDS: metal oxides, strontium cobalt oxide, molecular beam epitaxy, defects in oxides, perovskite oxides, thin films ■ INTRODUCTION the oxygen vacancy concentration.
    [Show full text]
  • Pulsed Laser Deposition of Thin Film Heterostructures
    University of New Orleans ScholarWorks@UNO University of New Orleans Theses and Dissertations Dissertations and Theses Summer 8-4-2011 Pulsed Laser Deposition of Thin Film Heterostructures Ezra Garza University of New Orleans, [email protected] Follow this and additional works at: https://scholarworks.uno.edu/td Part of the Physics Commons Recommended Citation Garza, Ezra, "Pulsed Laser Deposition of Thin Film Heterostructures" (2011). University of New Orleans Theses and Dissertations. 459. https://scholarworks.uno.edu/td/459 This Thesis is protected by copyright and/or related rights. It has been brought to you by ScholarWorks@UNO with permission from the rights-holder(s). You are free to use this Thesis in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights- holder(s) directly, unless additional rights are indicated by a Creative Commons license in the record and/or on the work itself. This Thesis has been accepted for inclusion in University of New Orleans Theses and Dissertations by an authorized administrator of ScholarWorks@UNO. For more information, please contact [email protected]. Pulsed Laser Deposition of Thin Film Heterostructures A Thesis Submitted to the Graduate Faculty of the University of New Orleans in partial fulfillment of the requirements for the degree of Master of Science in Applied Physics by Ezra Garza B.S. University of New Orleans, 2008 August, 2011 Copyright 2011, Ezra Garza ii Acknowledgments I would like to thank Dr. Leonard Spinu for giving me the opportunity of being a part of such a great research group and guidance during the research process.
    [Show full text]
  • Interface Between Nonmagnetic Insulators May Be Ferromagnetic
    of e and g and therefore the proportion ing the population of a metastable state, New low pricing of atoms detected on those states. Set- they could infer jumps between two ting the detuning at just the right value other states.3 And in 1999 Steven Peil ensures that the second Ramsey cavity and Gerald Gabrielse trapped a single will rotate the superposition to e when- electron and watched it jump between ever a photon is present. Thus, detect- quantized cyclotron levels.4 4K ing an atom in g means no photon; de- When analyzed in theoretical detail, tecting an atom in e means one photon. jumps turn out to spring from the ap- ARS Displex Figure 2 shows the result of an ex- propriate Hamiltonian and the time- perimental run that lasted 2.5 s. Each dependent Schrödinger equation. Far Pneumatic vertical bar corresponds to the detec- from being awkwardly instantaneous or tion of one of the 2000 or so atoms sent unprovoked, jumps are an integral fea- Drive through the cavity. Most of the time, ture of orthodox quantum mechanics. barring noise, the atoms revealed an More recently, Wojciech Zurek of Cryocoolers empty cavity. But 1.05 s into the run, the Los Alamos National Laboratory ana- .8w @ 4.2K DE-210S cavity field jumped to its 1-photon lyzed quantum jumps by following the state, stayed there for 0.48 seconds, then progress of information from the sys- .25w @ 4.2K DE-204S jumped back down. tem to the apparatus and the environ- .1w @ 4.2K DE-202S At the cavity’s 0.8-K operating tem- ment.
    [Show full text]
  • (12) Patent Application Publication (10) Pub. No.: US 2004/0069991A1 Dunn Et Al
    US 200400699.91A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2004/0069991A1 Dunn et al. (43) Pub. Date: Apr. 15, 2004 (54) PEROVSKITE CUPRATE ELECTRONIC (52) U.S. Cl. ................................................................ 257/75 DEVICE STRUCTURE AND PROCESS (75) Inventors: Gregory Dunn, Arlington Heights, IL (57) ABSTRACT (US); Robert Croswell, Hanover Park, IL (US); Jeffrey Petsinger, Wayne, IL (US) High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline Substrates (22) Correspondence Address: Such as large Silicon wafers by forming a compliant Substrate OBLON SPIVAK MCCLELLAND MAIER & for growing the monocrystalline layers. An accommodating NEUSTADT buffer layer (24) comprises a layer of monocrystalline oxide 1755JEFFERSON DAVIS HIGHWAY Spaced apart from a Silicon wafer by an amorphous interface FOURTH FLOOR layer (28) of silicon oxide. The amorphous interface layer ARLINGTON, VA 2.2202 (US) dissipates Strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any (73) Assignee: MOTOROLA, INC., Schaumburg, IL lattice mismatch between the accommodating buffer layer (21) Appl. No.: 10/267,692 and the underlying Silicon Substrate is taken care of by the amorphous interface layer. Some preferred electronic (22) Filed: Oct. 10, 2002 devices are described that use a layer or pattern of a perovskite cuprate (2125, 2305, 2310, 2315,2405) such as Publication Classification YBa-Cu-O, (YBCO) or Y, Pr, Ba-Cu-O, (YPBCO, 0<x<1) over a buffer layer (2120) of lanthanum strontium (51) Int. Cl. .................................................. H01L 29/04 aluminum tantalate (LSAT). Patent Application Publication Apr. 15, 2004 Sheet 1 of 10 US 2004/0069991 A1 At A G 3 Patent Application Publication Apr.
    [Show full text]
  • An Expressway for Electrons in Oxide Heterostructures 30 July 2018
    An expressway for electrons in oxide heterostructures 30 July 2018 The research team co-led by Prof Andrivo RUSYDI and Prof ARIANDO, both from the Department of Physics and Nanoscience and Nanotechnology Institute (NUSNNI) NanoCore, NUS has developed a new methodology involving a combination of advanced measurement techniques (spectroscopic ellipsometry, synchrotron-based soft X-ray absorption spectroscopy and charge transport measurements) to determine the influence of localised charges on the mobility of electrons at the oxide interface. These localised charges can shield Figure illustrates the importance of strong (electronic) (or "screen") electrons in such a way that they do screening in determining the electron mobility at not "see" each other, significantly reducing the interfaces of oxide heterostructures. The significant improvement in electron mobility can enable the coulomb repulsion between them. Screening the development of novel devices. Credit: Andrivo Rusydi coulomb repulsion helps to reduce correlation and Xiao CHI effects between electrons. This is known as the "screening effect" and it allows the electrons at the interface to travel with higher mobility. The new method developed by the NUS research team NUS physicists have developed a new allowed them to detect both screened and methodology for determining the impact of unscreened electrons, thereby shedding light on screening effects on charge carrier mobility at the how they dictate the electronic properties of a interface of complex material structures. complex oxide heterostructure, particularly at a buried interface. Oxide heterostructures, which are composed of layers of different oxide materials, exhibit unique The researchers involved in this team have applied physical properties at their interfaces (junction this method to an oxide heterostructure made up of between two oxide materials).
    [Show full text]