SCIENCE BEHIND the NANO SOLAR CELL Kshitij Yograj Patil 1 , Dr
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Progress in Hot-Wire Deposited Nanocrystalline Silicon Solar Cells
DEPARTAMENT DE FÍSICA APLICADA I ÒPTICA Av. Diagonal, 647, 08028 Barcelona PROGRESS IN HOT-WIRE DEPOSITED NANOCRYSTALLINE SILICON SOLAR CELLS Marta Fonrodona Turon Memòria presentada per optar al grau de Doctor Barcelona, juny de 2003 DEPARTAMENT DE FÍSICA APLICADA I ÒPTICA Av. Diagonal, 647, 08028 Barcelona PROGRESS IN HOT-WIRE DEPOSITED NANOCRYSTALLINE SILICON SOLAR CELLS Marta Fonrodona Turon Programa de doctorat: Tècniques Instrumentals de la Física i la Ciència de Materials Bienni: 1998-2000 Tutor: Enric Bertran Serra Director: Joan Bertomeu i Balagueró Memòria presentada per optar al grau de Doctor Barcelona, juny de 2003 A la Pepeta, la Núria i tots els que hi ha entremig. This work has been carried out in the Laboratory of Thin Film Materials of the Department of Applied Physics and Optics of the University of Barcelona, supervised by Dr. Joan Bertomeu Balagueró, in the framework of the projects TIC98-0381-C0201 and MAT2001-3541-C03-01 of the CICYT of the Spanish Government , and also with the aid of the project JOR3-CT97-0126 in the JOULE programme of the European Commission. The stage at Utrecht University was possible thanks to grant 2001BEAI200159 of Generalitat de Catalunya. Progress in Hot-Wire deposited nanocrystalline silicon solar cells 1 &RQWHQWV Agraïments ............................................................................................................................3 1- Introduction .......................................................................................................................5 1.1- -
A Dissertation Entitled Spectroscopic Ellipsometry Studies of Thin Film Si
A Dissertation entitled Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics _________________________________________ Dr. Nikolas J. Podraza, Committee Chair _________________________________________ Dr. Robert W. Collins, Committee Member _________________________________________ Dr. Randall Ellingson, Committee Member _________________________________________ Dr. Song Cheng, Committee Member _________________________________________ Dr. Rashmi Jha, Committee Member _________________________________________ Dr. Patricia R. Komuniecki, Dean College of Graduate Studies The University of Toledo May, 2016 Copyright 2016, Laxmi Karki Gautam This document is copyrighted material. Under copyright law, no parts of this document may be reproduced without the expressed permission of the author. An Abstract of Spectroscopic Ellipsometry Studies of Thin Film Si:H Materials in Photovoltaic Applications from Infrared to Ultraviolet by Laxmi Karki Gautam Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics The University of Toledo May 2016 Optimization of thin film photovoltaics (PV) relies on the capability for characterizing the optoelectronic and structural properties of each layer in the device over large areas and correlating these properties with device performance. This work builds heavily upon that done previously by us, our collaborators, and other researchers. It provides the next step in data analyses, particularly that involving study of films in device configurations maintaining the utmost sensitivity within those same device structures. In this Dissertation, the component layers of thin film hydrogenated silicon (Si:H) solar cells on rigid substrate materials have been studied by real time spectroscopic ellipsometry (RTSE) and ex situ spectroscopic ellipsometry (SE). -
Crystalline-Silicon Solar Cells for the 21St Century
May 1999 • NREL/CP-590-26513 Crystalline-Silicon Solar Cells for the 21st Century Y.S. Tsuo, T.H. Wang, and T.F. Ciszek Presented at the Electrochemical Society Annual Meeting Seattle, Washington May 3, 1999 National Renewable Energy Laboratory 1617 Cole Boulevard Golden, Colorado 80401-3393 NREL is a U.S. Department of Energy Laboratory Operated by Midwest Research Institute ••• Battelle ••• Bechtel Contract No. DE-AC36-98-GO10337 NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or any agency thereof. Available to DOE and DOE contractors from: Office of Scientific and Technical Information (OSTI) P.O. Box 62 Oak Ridge, TN 37831 Prices available by calling 423-576-8401 Available to the public from: National Technical Information Service (NTIS) U.S. Department of Commerce 5285 Port Royal Road Springfield, VA 22161 703-605-6000 or 800-553-6847 or DOE Information Bridge http://www.doe.gov/bridge/home.html Printed on paper containing at least 50% wastepaper, including 20% postconsumer waste CRYSTALLINE-SILICON SOLAR CELLS FOR THE 21ST CENTURY Y.S. -
Nanocrystal Quantum Dot Devices: How the Lead Sulfide (Pbs) System Teaches Us the Importance of Surfaces
398 CHIMIA 2021, 75, No. 5 COLLOIDAL NANOCRYSTALS doi:10.2533/chimia.2021.398 Chimia 75 (2021) 398–413 © W. Lin, M. Yarema*, M. Liu, E. Sargent, V. Wood Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces Weyde M. M. Lina, Maksym Yarema*a, Mengxia Liub, Edward Sargentb, and Vanessa Wood*a Abstract: Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for process control and reproducibility. In this review, we use the example of well-studied lead sulfide (PbS) nanocrystals and describe the key advances in nanocrystal synthesis and thin-film fabrication that have enabled improvement in performance of photovoltaic devices. While research moves forward with novel nanocrystal materials, it is important to consider what decades of work on PbS nanocrystals has taught us and how we can apply these learnings to realize the full potential of nanocrystal solids as highly flexible materials systems for functional semiconductor thin-film devices. One key lesson is the importance of controlling and manipulating surfaces. Keywords: Lead sulfide colloidal nanocrystals · Nanocrystal quantum dot devices · Semiconductor nanocrystals Weyde M. -
Photoluminescent Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in Low-Pressure Helium-Nitrogen Mixtures for Biomedical Applications A
Photoluminescent Si-based nanocrystals prepared by pulsed laser ablation in low-pressure helium-nitrogen mixtures for biomedical applications A. Yu. Kharin, A. A. Fronya, S. V. Antonenko, N. V. Karpov, S. I. Derzhavin, Y. I. Dombrovska, A. A. Garmash, N. I. Kargin, S. M. Klimentov, V. Yu. Timoshenko, et al. To cite this version: A. Yu. Kharin, A. A. Fronya, S. V. Antonenko, N. V. Karpov, S. I. Derzhavin, et al.. Photoluminescent Si-based nanocrystals prepared by pulsed laser ablation in low-pressure helium-nitrogen mixtures for biomedical applications. SPIE LASE, Feb 2020, San Francisco, United States. 10.1117/12.2551482. hal-03100819 HAL Id: hal-03100819 https://hal.archives-ouvertes.fr/hal-03100819 Submitted on 6 Jan 2021 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Photoluminescent Si-based nanocrystals prepared by pulsed laser ablation in low-pressure helium-nitrogen mixtures for biomedical applications A. Yu. Kharina*, A. A. Fronyaa, S. V. Antonenkob, N. V. Karpova, S. I. Derzhavina,c, Y. I. Dombrovskaa, A. A. Garmasha, N. I. Karginb, S. M. Klimentova, V. Yu. Timoshenkoa,d , and A.V. Kabashina,e a MEPHI, Institute of Engineering Physics for Biomedicine, Kashirskoe sh. -
Copyright by Vikas Reddy Voggu 2017
Copyright by Vikas Reddy Voggu 2017 The Dissertation Committee for Vikas Reddy Voggu Certifies that this is the approved version of the following dissertation: Development of Solution Processed, Flexible, CuInSe2 Nanocrystal Solar Cells Committee: Brian A. Korgel, Supervisor John G. Ekerdt Delia Milliron Thomas Truskett David A. Vanden Bout Development of Solution Processed, Flexible, CuInSe2 Nanocrystal Solar Cells by Vikas Reddy Voggu Dissertation Presented to the Faculty of the Graduate School of The University of Texas at Austin in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy The University of Texas at Austin December 2017 Dedication For my loving parents, Prabhakar Reddy Voggu and Mallika Voggu. For all those who are working towards the development of clean energy technologies. Acknowledgements Graduate study at UT Austin has been a time where I learnt the most in my life. I have grown as a scientist, leader, and effective communicator while pursuing my PhD. I am thankful for all the mentors and peers who helped me to gain this knowledge and become a better person. First of all, I would like to thank my adviser Dr. Brian Korgel, who always kept his trust in me while guiding me with tough projects. Right from the moment he called me the “(photovoltaic) device guru,” I have been inspired, and in times when the experiments do not go as planned, it is his belief in me and motivation that I received from him that kept me going. Apart from learning how to approach scientific problems, I have also developed collaboration and mentorship skills from him. -
From Thin-Film to Perovskite/C-Si Tandem Solar Cell Applications
coatings Article Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications , Luana Mazzarella * y, Anna B. Morales-Vilches , Lars Korte, Rutger Schlatmann and Bernd Stannowski Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstr. 3, 12489 Berlin, Germany; [email protected] (A.B.M.-V.); [email protected] (L.K.); [email protected] (R.S.); [email protected] (B.S.) * Correspondence: [email protected] Present address: Photovoltaic Materials and Devices Group, Delft University of Technology, 2628 CD Delft, y The Netherlands. Received: 17 July 2020; Accepted: 28 July 2020; Published: 3 August 2020 Abstract: Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. -
Direct Laser Written Nano- & Micro-Optical Textures For
Direct Laser Written Nano- & Micro-Optical Textures for Photovoltaics Applications Zur Erlangung des akademischen Grades eines DOKTOR-INGENIEURS von der KIT-Fakultät für Elektrotechnik und Informationstechnik des Karlsruher Instituts für Technologie (KIT) genehmigte DISSERTATION von M.Sc., Stephan Dottermusch geb. in: Pforzheim Tag der mündlichen Prüfung: 06. Juni 2019 Hauptreferent: Prof. Dr. Bryce Richards Korreferenten: Prof. Dr. Christiane Becker Prof. Dr. Heinz Kalt Kurzfassung xiv Kurzfassung Im Gegensatz zu anderen Technologien, welche der Gewinnung von elektrischer Energie dienen, basierte die Photovoltaik nicht auf einer langen Umwandlungskette. Anstatt einen Kraftstoff zu verbrennen, die Abwärme dieses Prozesses zur Wassererwärmung zu nutzen um schließlich mit Wasserdampf eine Turbine zu betreiben, welche einen elektrischen Generator antreibt, gelingt in der Photovoltaik die Umwandlung von Lichtenergie in elektrische Energie direkt. Dieser Vorgang ermöglicht eine Dezentralisierung der elektrischen Energiegewinnung. Des Weiteren besitzt die Photovoltaik mit der Sonne eine erneuerbare Energiequelle, welche auf menschlichen Zeitskalen nicht erlischt. Zusätzlich entstehen im Betrieb keine Treibhausgase, welche den Klimawandel weiter anheizen. Trotz der vielen Vorteile der Photovoltaik loht sich die Produktion von Solarzellen, als Herzstücke der elektrischen Energiegewinnung in der Photovoltaik, erst dann im großen Stil, wenn der Preis pro erzeugte kWh elektrische Energie mit dem anderer herkömmlicher Energieträger mithalten kann. Insbesondere der Wirkungsgrad einer Solarzelle hat signifikanten Einfluss auf die Kosten für die elektrische Energie. Der Wirkungsgrad hängt zum einen ab von der Effizienz, mit der einfallendes Licht in freie Ladungsträger umgewandelt werden kann, und zum anderen davon, mit welcher Effizienz die Ladungsträger extrahiert werden können. Diese Dissertation beschäftigt sich mit Oberflächenstrukturen, welche eine gesteigerte Nutzung des einfallenden Lichtes ermöglichen. -
Comparative Lifecycle Energy Payback Analysis of Multijunction Asige And
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2011; 19:228–239 Published online 15 July 2010 in Wiley Online Library (wileyonlinelibrary.com). DOI: 10.1002/pip.990 BROADER PERSPECTIVES Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules H.C. Kim1 and V.M. Fthenakis1,2* 1 Center for Life Cycle Analysis, Columbia University, NY, USA 2 Photovoltaic Environmental Research Center, Brookhaven National Laboratory, Upton, NY, USA ABSTRACT Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R&D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R&D designs will be 0.7–0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. -
High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells”, NREL Phase I Annual Technical Progress Report (Sept
A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Subcontract Report High Efficiency and High Rate NREL/SR-520-39091 Deposited Amorphous Silicon- January 2006 Based Solar Cells Final Technical Report 1 September 2001 – 6 March 2005 X. Deng University of Toledo Toledo, Ohio NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 High Efficiency and High Rate Subcontract Report NREL/SR-520-39091 Deposited Amorphous Silicon- January 2006 Based Solar Cells Final Technical Report 1 September 2001 – 6 March 2005 X. Deng University of Toledo Toledo, Ohio NREL Technical Monitor: Bolko von Roedern Prepared under Subcontract No. NDJ-2-30630-08 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy submitted by the subcontractor and received no editorial review at NREL. NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof. -
High-Efficiency Amorphous Silicon and Nanocrystalline Silicon- DE-AC36-99-GO10337 Based Solar Cells and Modules: Final Technical Progress Report, 5B
A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future High-Efficiency Amorphous Subcontract Report NREL/SR-520-43191 Silicon and Nanocrystalline May 2008 Silicon-Based Solar Cells and Modules Final Technical Progress Report 30 January 2006 – 29 January 2008 S. Guha and J. Yang United Solar Ovonic LLC Troy, Michigan NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 High-Efficiency Amorphous Subcontract Report NREL/SR-520-43191 Silicon and Nanocrystalline May 2008 Silicon-Based Solar Cells and Modules Final Technical Progress Report 30 January 2006 – 29 January 2008 S. Guha and J. Yang United Solar Ovonic LLC Troy, Michigan NREL Technical Monitor: Bolko von Roedern Prepared under Subcontract No. ZXL-6-44205-14 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. -
Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells Johannes P
1132 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 6, NO. 5, SEPTEMBER 2016 Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells Johannes P. Seif, Antoine Descoeudres, Gizem Nogay, Simon Hanni,¨ Silvia Martin de Nicolas, Niels Holm, Jonas Geissbuhler,¨ A¨ıcha Hessler-Wyser, Martial Duchamp, Rafal E. Dunin-Borkowski, Martin Ledinsky, Stefaan De Wolf, and Christophe Ballif Abstract—Carrier collection in silicon heterojunction (SHJ) so- (PECVD) features nanometer-sized silicon crystals embedded lar cells is usually achieved by doped amorphous silicon layers of in an amorphous silicon (a-Si:H) matrix. This material has al- a few nanometers, deposited at opposite sides of the crystalline sil- ready been studied for several decades and found its way into icon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the several important applications including photovoltaic devices front of solar cells, and high contact resistivities with the adjacent [1]–[8], thin-film transistors [9], and microelectromechanical transparent electrodes. Their substitution by equally thin doped systems [10]. Significant effort was put on the experimental nanocrystalline silicon layers has often been argued to resolve [11]–[16] and theoretical [17] investigation of its growth pro- these drawbacks. However, low-temperature deposition of highly cess [4], [18], as well as its electrical [19]–[21] and optical crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we properties [2], [15]. review and discuss different strategies to facilitate the nucleation In the case of solar cells, μc-Si:H was for a long time mainly of nanocrystalline silicon layers and assess their compatibility with used as absorbing material of the bottom cell in so-called mi- SHJ solar cell fabrication.