ECE 656: Electronic Transport in Semiconductors Fall 2017
Electron and Phonon Dispersion
Mark Lundstrom
Electrical and Computer Engineering Purdue University, West Lafayette, IN USA
Lundstrom8/22/17 ECE-656 F17 Waves in general
! ! ! ! i(β⋅r−ωt) General wave: u(r,t) = A β e β = 2π λ ( ) ! ! ! ! ! i(β⋅r−ω(β )t) 3 U (r,t) = A β e d β ω ∫∫∫ ( )
Wave packet: β ≈ β0 υg = dω dβ U (x) group velocity β x
β0 Δβ 1 υ p = ω β Δβ Δx > Δx 2 2 phase velocity Lundstrom ECE-656 F17 outline
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
3 Lundstrom ECE-656 F17 Electrons in atoms Hydrogen atom:
!2 " " " " ! q2 − ∇2ψ (r ) + U (r )ψ (r ) = Eψ (r ) U (r ) = − 2m 4πε r 0 0
U = 0 ! + U r ( ) ! 13.6 U (r ) En = − 2 eV n
r
4 Lundstrom ECE-656 F17 Electrons in free space
2 i t − ∇2ψ (r ) +U (r )ψ (r ) = Eψ (r ) Ψ(r,t) =ψ (r )e ω 2m 0 E = !ω ! U r = 0 free space, constant potential: ( )
2 2 − ∇ ψ (r ) = Eψ (r ) ψ (r ) = Aeikir k = 2m E 2m 0 0 ! ! β → k 2 2 ! " k momentum: p = k E k = ( ) 2m 0 2 position: ψ *(r )ψ (r ) = A
5 Lundstrom ECE-656 F17 Electrons in crystals
U = 0 U = 0 ! a U r C ( )
+ + + + + +
Crystals: 2 ! 2 " " " " ! ! ! − ∇ ψ (r ) + UC (r )ψ (r ) = Eψ (r ) UC (r + a) = UC (r ) 2m 0 “crystal potential” Lundstrom ECE-656 F17 6 Electrons in crystals
2 2 − ∇ ψ (r ) + UC (r )ψ (r ) = Eψ (r ) UC (r + a) = UC (r ) 2m 0
ik ir ψ (r ) = u r e u (r + a) = u (r ) k: Brillouin zone k ( ) k k “Bloch wave”
p ≠ k but…. crystal momentum ! ! ! E k bandstructure (dispersion) E k = "ω k ( ) ( ) ( ) Lundstrom ECE-656 F17 7 Crystal structure
Silicon
N ≈ 5 × 1022 cm-3 atoms
4 nearest 5.43 A neighbors
8 Band structure (electron dispersion) bottom of E(k) for electrons in Si conduction band
top of valence band
[100] [111]
DFT calculations by Dr. J. Maassen, Purdue 9 Constant energy surfaces
Si conduction band z
y 2 2 2 2 2 2 ! " k " ky " k E k = x + + z ( ) 2m* 2m* 2m* xx yy zz m* 0.9m = 0 x * mt = 0.19m0 “Valley degeneracy” = 6
Valence band is “warped”.
10 Lundstrom ECE-656 F17 outline
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
11 Lundstrom ECE-656 F17 Bandstructure basics Electrons in a solid behave as both particles (quasi-particles) E and as waves.
Electron waves are described BW by a “dispersion:” E(k ) = ω (k )
k Because the crystal is periodic, −π a π a the dispersion is periodic in k (Brillouin zone).
Bandwidth on the order of eV. 12 12 Bandstructure basics
Particles described by a E “wavepacket.” ! ΔxΔp ≥ 2
The “group velocity” of a wavepacket is determined by k the dispersion: −π a k0 π a ! ! 1 ! υg (k ) = ∇k E(k ) "
13 Lundstrom ECE-656 F17 13 Bandstructure basics
E E 2k 2 2m* E = C + n Near a band minimum or maximum, E(k) is a parabola.
The curvature of the parabola is the “effective mass.” k −π a π a
E = E −2k 2 2m* V p
14 Effective mass model for electrons
E E = 2k 2 2m* As long as the BW >> kBT, the effective mass model often works fine.
BW Typically, only states near the band edge matter, and k these regions can be −π a π a described by an effective mass approximation.
15 Lundstrom ECE-656 F17 15 Complex band structures (Bi2Te3)
2k 2 E(k) ≠ * 2m
DFT calculations of Bi2Te 3 by Dr. J. Maassen, Purdue 16 Lundstrom ECE-656 F17 First order correction for non-parabolicity
E “Kane bands” 2 2 * E = k 2m !2k 2 E(1+αE) = 2m* 0 ( )
-1 BW α = 0.5 eV Si
k α = 0.64 eV-1 Si −π a π a
17 Lundstrom ECE-656 F17 17 Surfaces of constant energy
2 2 2 2 2 2 2 2 2 2 ! k ! ky ! k ! k ! k x z E = ⎡1∓ g θ,φ ⎤ E = E = * + * + * * ⎣ ( )⎦ * 2m 2m 2m 2m 2m xx yy zz - Heavy hole + Light hole
See L. Reggiani, “Chapter 2: General Theory,” pp.7-86, in Hot Electron Transport in Semiconductors, Springer-Verlag, New York, 1985 18 Lundstrom ECE-656 F17 18 Model bandstructure: Si
2k 2 E(k) = EC + 2m* E n m* 0.92m = 0 * mt = 0.19m0
L 1.12eV X k < 111 > < 100 > Eso hh
lh 2 2 so k E(k) = EV − E 0.044 eV * so = 2mp 19 19 Model bandstructure: GaAs
E
* ≈ 0.30eV m = 0.063m0 1.42eV L X k < 111 > < 100 > Eso hh
lh E 0.34 eV so = so
Lundstrom ECE-656 F17 20 E(k) for graphene
Recall: 1 dE(k) E υ k = g ( ) dk For graphene: k x ! υ k = υ ≈ 108 cm/s g ( ) F ky Also recall: g 2 V = 2 −1 * ⎛ 1 d E(k)⎞ m = ⎜ 2 dk 2 ⎟ 2 2 ⎝ ! ⎠ E(k) = ±υF kx + ky = ±υF k For graphene: m* = ? 21 Lundstrom ECE-656 F17 Outline
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
22 Lundstrom ECE-656 F17 mass and spring
1 2 U = ks (x − x0 ) 2
k dU s F = − = −ks (x − x0 ) dx d 2 x M 2 = −ks (x − x0 ) dt M iωt x(t)− x0 = Ae ⎛ 1⎞ En = n + ω ω = k M ⎝⎜ ⎠⎟ s 2
Lundstrom ECE-656 F17 23 Elastic waves: acoustic modes
! ! ! i q r t ! ! u(r ) A eˆ e ( i −ω ) q = i i β →
Longitudinal wave: displacement in the direction of propagation. Transverse waves: displacement transverse to the direction of propagation.
LA phonons: a near q = 0:
x
Lundstrom ECE-656 F17 24 Elastic oaves: optical modes
! ! ! i q r t u(r ) A eˆ e ( i −ω ) = i i
Atoms in the unit cell oscillate against each other.
Longitudinal and transverse optical modes.
a
x unit cell near q = 0:
Lundstrom ECE-656 F17 25 Lattice (phonon) dispersion
phonons in Si
DFT calculations by Dr. J. Maassen, Purdue
2 Lundstrom ECE-656 F17 6 outline
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
27 Lundstrom ECE-656 F17 Phonon dispersion basics
Lattice vibrations behave both ω as particles (quasi-particles) optical phonons and as waves.
Lattice vibrations are described ω q = E q by a “dispersion:” ( ) ( ) acoustic phonons BW Because the crystal is periodic, the dispersion is periodic in k q (Brillouin zone). −π a π a
Lundstrom ECE-656 F17 28 Phonon dispersion basics
Particles described by a ω “wavepacket” (phonon).
The “group velocity” of a phonon is determined by the dispersion:
υ q = ∇ ω q g ( ) q ( ) q
−π a q0 π a
Lundstrom ECE-656 F17 29 Phonon dispersion basics
Optical phonons have a flat ω dispersion (near the zone center). Einstein Near zero group velocity.
Einstein approximation Debye
Acoustic modes have a linear dispersion (near the zone center). q
Constant sound velocity. −π a π a
Debye approximation. Lundstrom ECE-656 F17 30 General features of phonon dispersion
low group velocity ω ω 0 LO (1) TO (2) LA (1) ω = υSq υ = c ρ TA (2) S ℓ
q π a
31 Lundstrom ECE-656 F17 Outline
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
32 Lundstrom ECE-656 F17 Bandstructure (dispersion) electrons in Si phonons in Si
note the different energy scales! DFT calculations by Dr. J. Maassen, Purdue 3 Lundstrom ECE-656 F17 3 Real dispersions
BW k T BW ~ k T >> B B 3 0.06 TO (2) 2 cb LO (1) 1 0.04 LA (1) (eV) (eV) l h e 0 p E E -1 0.02 hh TA (2) -2 lh 0 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 k (x /a ) q (x π/a ) kxx (×π a0) qxx(×π a)0 note the different energy scales! electrons in Si (along [100]) phonons in Si (along [100]) 34 Lundstrom ECE-656 F17 34 References
For a though treatment of electrons and phonons in crystals, see:
N.W. Ashcroft and N.D. Mermin, Solid State Physics, Saunders College, Philadelphia, 1976.
For an introduction to lattice waves and phonons, see:
T.S. Fisher, Thermal Energy at the Nanoscale, Chapter 1, World Scientific, 2014.
Lundstrom ECE-656 F17 35 Summary
1) Electron dispersion (band structure)
2) Simple band structures
3) Phonon dispersion
4) Simple phonon dispersions
5) Electrons vs. phonons
Lundstrom ECE-656 F17 36