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Recent Trends in Micro- and Nanophotonics: a Personal Selection JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol. 13, No. 9, September 2011, p. 1055 - 1066 Recent trends in micro- and nanophotonics: A personal selection D. MIHALACHE Horia Hulubei National Institute for Physics and Nuclear Engineering, P. O. B. MG-6, 077125 Magurele, Romania I give a brief overview of some recent results in micro- and nanophotonics. Due to the vast amount of research activity in these exploding areas I only concentrate on selected recent advances in (a) silicon photonics, (b) spatial and spatiotemporal optical solitons (alias light bullets) in microwaveguide arrays and in arrays of evanescently-coupled silicon- on-insulator nanowires, (c) spatial solitons in photorefractive materials, (d) nanoplasmonics, (e) photonic crystals, (f) metamaterials for micro- and nanophotonics including optical materials with negative refractive indices, (g) terahertz radiation and its applications, and (h) solid-state single photon sources and nanometric size optical cavities for quantum information processing. (Received August 12, 2011; accepted September 15, 2011) Keywords: Microphotonics, Nanophotonics, Silicon photonics, Plasmonics, Photonic crystals, Spatial optical solitons, Light bullets, Plasmonic lattice solitons, Metamaterials, Terahertz radiation 1. Introduction for biosensing and chemical sensing applications, ability of metal nanoparticles to act as efficient pointlike sources The term “photonics” was coined in 1967 by Pierre of both light and heat, and subwavelength plasmonic Aigrain, a French scientist, who gave the following lattice solitons in arrays of metallic nanowires embedded definition: “Photonics is the science of the harnessing of in nonlinear Kerr media will be briefly discussed. light. Photonics encompasses the generation of light, the Section 4 is devoted to recent advances in the study of detection of light, the management of light through photonic crystals and metamaterial structures (including guidance, manipulation, and amplification, and most engineered media with negative refractive indices). I importantly, its utilization for the benefit of mankind”. In briefly discuss the achievement of negative refractive brief, photonics is the science of generating, controlling, index three-dimensional optical metamaterials with a very and detecting photons and therefore nanophotonics (nano- high figure of merit having a cascaded ‘fishnet’ structure optics) studies the unique behaviour of light at a and the demonstration of an engineered metamaterial nanometer scale (see, for example, two excellent made of alternating layers of negatively refracting (a introductory books [1]-[2] on this topic). Correspondingly, silicon photonic crystal) and positively refracting (air) microphotonics (micro-optics), deals with the behaviour of materials that strongly collimates a beam of near-infrared light at a micrometer scale. light at the telecommunication wavelength of 1550 nm. I Microphotonics and nanophotonics are now deemed also consider the issue of fabrication of low-loss new technologies whose time has come and that threaten plasmonic metamaterials made of semiconductors such as to displace the existing technological solutions; emerging InAs-heterostructures for applications in mid-infrared applications are envisaged in diverse areas such as frequency range. information processing, high-speed data communication In Sec. 5 I briefly overview a few recent studies of systems, imaging, lighting, displays, manufacturing, life terahertz radiation and its various applications. The close sciences and health care, safety and security, etc. link between nanophotonics and quantum information This brief overview of recent trends in micro- and processing is discussed in Sec. 6. Finally, Sec. 7 concludes nanophotonics is organized as follows. In Sec. 2 I this paper. overview the recent advances in silicon photonics. Hot research topics such as silicon photonic nanowires, semiconductor quantum dots and silicon-organic slot 2. Silicon photonics waveguides for light emission, detection, guiding and control are discussed. Also, I briefly discuss recent In brief, silicon photonics is the photonic technology progress in the study of both spatial and spatiotemporal based on silicon chips. The highest impact of silicon optical solitons (alias light bullets) in microwaveguide photonics can be in optical interconnections between arrays, and of spatial solitons in photorefractive materials. digital electronic chips [3]-[5]; for a collection of up-to- The problem of light confinement in nanostructured date articles on silicon photonic components and their noble metals is addressed in Sec. 3. Key issues of integration, see the recent book [5]. In this Section I will nanoplasmonics, such as ultrafast active plasmonics, only concentrate on all-optical high-speed signal plasmonic solar cells, surface plasmon resonance sensors processing with silicon-organic hybrid slot waveguides, 1056 D. Mihalache periodically poled silicon, cladding-modulated Bragg resolution is about 100 pm (about half the distance gratings in silicon waveguides, light emission in silicon between atoms in some crystals) due to spherical slot waveguides, enhancing nonlinearities in silicon aberration of electromagnetic lenses and finite size of photonic slot waveguides, and the possibility of light electron source. Recently, by using a highly coherent bullet formation in silicon-on-insulator (SOI) nanowires. focused electron probe in a fifth-order aberration-corrected Silicon (Si) has an indirect bandgap meaning that the transmission electron microscope, a crystal spacing of 50 upper and the lower electronic states (conduction and pm was resolved [6]. valence bands) do not occur at the same value of the It is believed that the highest impact of silicon crystal momentum. It is worth mentioning that light can photonics will be in high-speed data communications; penetrate much farther before being absorbed in an consequently, most of the research has been aimed at indirect-band gap material than in a direct-bandgap one producing sources of photons, electro-optic modulators, and this fact is crucial for photovoltaics (solar cells). and photodetectors, see Refs. [3]-[5]. A fundamental However, silicon is still the most used solar-cell material, problem with Si is its lack of a static dipole moment, a despite the fact that it is an indirect-bandgap consequence of its centrosymmetric crystal structure. This semiconductor and therefore does not absorb light very means that the linear electro-optic (Pockels) effect, that well. It is well known that silicon is transparent in the fiber unique phenomenon that makes lithium niobate (LiNbO3) optic communication bands around 1300 nm and 1550 nm and III-V semiconductors good electro-optic materials, is because the corresponding photon energies are less than absent in Si. However, Si is not able to detect signals at the bandgap, which is about 1.1 eV for Si. Notice that standard communication wavelengths of 1300 nm and persuading silicon to perform various photonic functions 1550 nm because such photon energies are less than its can bring optical communication to the world of chip bandgap. Yet these wavelengths represent standard interconnects, see Refs. [3]-[5]. Envisioned are silicon telecommunication bands because optical fibers, to which chips that communicate internally, or with other chips, devices must eventually interface, have low propagation using photons, in order to avoid the bandwidth limitation losses in these frequency bands (about 0.2 dB/Km). The imposed by commonly used metallic interconnects. Other silicon’s inability to absorb these wavelengths has been emerging applications include, e.g., low cost transceivers overcome by taking advantage of the small bandgap of for 10 to 100 Gbit/s Ethernet (a transceiver is a device that germanium (Ge) grown on silicon. Raman scattering (a has both a transmitter and a receiver which are combined phenomenon that describes interaction of light with atomic and share common circuitry or a single housing), a new vibrations of the crystal) and Kerr effect are two examples platform for mid-infrared photonics, and optically assisted of nonlinear optical phenomena that only appear when analog-to-digital conversion, see Refs. [3] and [4]. Optical silicon is pumped with high intensity laser light (intensities amplification and lasing, once considered forbidden in I>10 MW/cm2). To avoid generating electrons and to silicon, have been achieved in recent years. Silicon’s prevent free carrier absorption, these devices use infrared nonlinear optical properties, enhanced by tight optical light (at 1500 nm), so that the photon energy is less than confinement in Si/SiO2 structures, i.e., SOI nanostructures, the bandgap of silicon. However, because of high are producing wavelength generation and conversion, intensities involved, two-photon absorption occurs [7]. In which are central functions in multi-wavelength the past years there has been important progress in the communications and signal processing [3]-[5]. The SOI search for light amplification in silicon. Stimulated Raman technology, which refers to the use of a layered silicon- scattering (SRS) was also reported in SOI waveguides [8]. insulator-silicon substrate in place of conventional silicon In these seminal experiments, amplification of the Stokes substrates in semiconductor manufacturing is a key signal, at 1542.3 nm, of up to 0.25 dB has been observed technology in both micro- and nanoelectronics and in in such SOI waveguides, using
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