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A 200 C Universal Gate Driver Integrated Circuit for Extreme IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 4153 A 200 ◦C Universal Gate Driver Integrated Circuit for Extreme Environment Applications Mohammad A. Huque, Member, IEEE,SyedK.Islam, Senior Member, IEEE, Leon M. Tolbert, Senior Member, IEEE, and Benjamin J. Blalock, Senior Member, IEEE Abstract—High-temperature power converters (dc–dc, dc–ac, etc.) have enormous potential in extreme environment applica- tions, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics also need to perform at high temperature. This paper presents a silicon- on-insulator (SOI) based high-temperature gate driver integrated circuit (IC) incorporating an on-chip low-power temperature sen- sor and demonstrating an improved peak output current drive over our previously reported work. This driver IC has been primarily designed for automotive applications, where the underhood tem- perature can reach 200 ◦C. This new gate driver prototype has been designed and implemented in a 0.8 μm, 2-poly, and 3-metal bipolar CMOS–DMOS (Double-Diffused Metal-Oxide Semiconductor) on SOI process and has been successfully tested for up to 200 ◦Cam- bient temperature driving a SiC MOSFET and a SiC normally-ON Fig. 1. Operating temperature ranges of semiconductor ICs. JFET. The salient feature of the proposed universal gate driver is its ability to drive power switches over a wide range of gate turn- ON voltages such as MOSFET (0 to 20 V), normally-OFF JFET temperature power conversion modules, the associated control (−7to3V),andnormally-ONJFET(−20 to 0 V). The measured electronics also need to perform at high temperature. Operation peak output current capability of the driver is around 5 A and is of most ICs used in consumer electronics and industrial electri- thus capable of driving several power switches connected in par- cal systems is limited to a narrow operating temperature range allel. An ultralow-power on-chip temperature supervisory circuit of −55 ◦C to 125 ◦C. Fig. 1 shows the temperature ranges for has also been integrated into the die to safeguard the driver cir- cuit against excessive die temperature (≥220 ◦C). This approach different classes of commercially available ICs. Operation of utilizes increased diode leakage current at higher temperature to electronics outside the traditional temperature range is typically monitor the die temperature. The power consumption of the pro- defined as extreme temperature operation. This covers both the posed temperature sensor circuit is below 10 μW for operating ◦ very low temperatures down to absolute zero (0 K) and high temperature up to 200 C. temperatures such as anything above +125 ◦C. Index Terms—Gate driver, high-temperature, silicon-on- Electronic devices and circuits are exposed to high temper- insulator (SOI), temperature sensor. ature in a variety of applications under various environmen- tal conditions. Integrated solid-state electronic circuits capable ◦ I. INTRODUCTION of operating at ambient temperatures higher than 150 C with- out external cooling have tremendous potential in automotive, IGH-TEMPERATURE power converters (dc–dc, dc–ac, aerospace, and well-logging applications as well as in nuclear etc.) have enormous potential in extreme environment H and geothermal power plants. applications, including automotive, aerospace, geothermal, nu- The automotive industry is often considered the primary and clear, and well logging. For successful realization of such high- the largest near-term market for high-temperature electronics. The volatile nature of gasoline prices and the potential shortage Manuscript received November 20, 2011; revised January 31, 2012; ac- of supply in the future are creating a growing demand for the cepted February 8, 2012. Date of current version May 15, 2012. This work development of hybrid electric vehicles (HEVs), plug-in HEVs was supported by the Oak Ridge National Laboratory through the U.S. Depart- ment of Energy’s Vehicle Technologies Program through UT Battelle Contract (PHEVs), and all EVs to achieve better fuel efficiency compared 4000047872. Recommended for publication by Associate Editor A. Lindemann. to the traditional internal combustion engines [1]. Research and M. A. Huque is with the Electric Power Research Institute, Knoxville, TN development in electric and HEVs have generated an enormous 37932 USA (e-mail: [email protected]). S. K. Islam and B. J. Blalock are with the Department of Electrical Engineer- need for alternative power electronic modules (such as dc–dc ing and Computer Science, The University of Tennessee, Knoxville, TN 37996 converters and dc–ac inverters) for bidirectional power conver- USA (e-mail: [email protected]; [email protected]). sion between the energy storage units (battery or ultracapacitor) L. M. Tolbert is with the Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA, and also with the Department of Electrical Engineering and Com- and the traction system [2]–[7]. puter Science, The University of Tennessee, Knoxville, TN 37996, USA (e-mail: Ambient temperature under the hood of an automobile is [email protected]). usually above 150 ◦C and can even reach 200 ◦C near the Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. engine [8], [9]. The state-of-art HEV technologies require a ◦ Digital Object Identifier 10.1109/TPEL.2012.2187934 separate 70 C cooling loop for commercially available power 0885-8993/$31.00 © 2012 IEEE 4154 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 TABLE I the turning ON and OFF operations of the power switches. PHYSICAL PROPERTIES OF TYPICAL SEMICONDUCTOR MATERIALS FOR POWER In a typical EV, the power converter modules along with the ELECTRONICS DEVICES driver circuits are required to be placed under the hood. Hence, the ambient temperature of the electronics inside the power modules will be 150 ◦C or higher. Since SiC-based IC design technology is not commercially available, the solution for low or medium power needs and operating temperature up to 300 ◦C is silicon-on-insulator (SOI), which is commercially available for IC development [14]–[16]. Junction leakage is a major concern for bulk CMOS devices for high-temperature electronics applications which causes higher junction temperature compared to the ambient and can potentially lead to device failure. Si-based CMOS with reduced OFF-state leakage current for higher temperature operation can be realized using SOI structure. The buried insulator layer in electronic circuits which are mostly rated for 85 ◦C ambient the SOI structure greatly decreases the leakage path associated temperature. The future goal of the automotive industry is to with the drain and the source p–n junctions. In SOI technol- use the same 105 ◦C cooling loop that is used for the engine ogy the leakage area of the junction is decreased by a factor to cool the electronics under the hood. By removing the extra of 100 compared to the bulk-CMOS process [14]. The buried cooling unit and by reducing the size of the heat sink, an order oxide layer also reduces the OFF-state source-to-drain carrier of magnitude savings in overall mass and volume of the power emission leakage that physically occurs deeper in the substrate electronic modules can be achieved. To minimize the cost and of the bulk MOSFETs. The threshold voltage variation with to improve the efficiency of HEVs, there is a pressing demand temperature is smaller in SOI devices compared to their bulk for miniaturization and weight reduction of the power converter CMOS counterparts [16]. SOI also provides improved latch-up modules. To achieve this goal, electronic circuits capable of op- immunity, which ultimately increases the reliability of the cir- erating at higher ambient temperatures (175 ◦C and above) with cuit operation at higher temperature [16]. These features make minimal thermal management are in great demand. SOI-based circuits capable of operating successfully in the 200– Presently, more than 98% of current electronic devices use 300 ◦C temperature range. For this paper, a process that com- silicon (Si) as the semiconductor material [9]. Si-based power bines the advantages of high-voltage DMOS and bipolar devices devices currently dominate power electronics and power system with SOI technology, known as bipolar CMOS–DMOS (BCD) applications. However, more and more power electronics appli- process, has been chosen for the design and implementation of cations are requiring high voltages, high switching frequencies, the high-temperature high-voltage gate driver circuit. and high power densities as well as operating junction tempera- This paper presents an SOI-based high-temperature inte- tures of the power devices in excess of 150 ◦C. Si-based devices grated gate driver circuit with large current drive capability. The are not capable of meeting these challenging requirements with- proposed universal gate driver circuit demonstrates the capabil- out expensive cooling systems, which increase the weight and ity to drive a SiC MOSFET as well as a normally ON SiC JFET. volume of the power converters [10]. Circuit topology and operation along with test results of the Table I lists physical properties of typical semiconductor ma- earlier prototype of this SOI gate driver circuit were presented terials [10], [11] for power electronics devices. The superior in [17], [18]. In this paper, an improved version of that gate material properties of the wide bandgap (WBG) semiconduc- driver circuit is discussed. The design focus of this iteration was tors (SiC and GaN) offer a lower intrinsic carrier concentration to increase the current drive capability and the robustness of the (10–35 orders of magnitude), a higher electric breakdown field circuit across a wide temperature range. An on-chip low-power (4–20 times), a higher thermal conductivity (3–13 times), and a temperature sensor circuit is also incorporated with the core gate higher saturated electron drift velocity (2–2.5 times) when com- driver circuit to safeguard it from excessive die temperature.
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