DOCSLIB.ORG

Circuit Design and Applications of the ADM663A/ADM666A Micropower Linear Voltage Regulators by Khy Vijeh, Matt Smith

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Circuit Design and Applications of the ADM663A/ADM666A Micropower Linear Voltage Regulators by Khy Vijeh, Matt Smith AN-392 a APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Circuit Design and Applications of the ADM663A/ADM666A Micropower Linear Voltage Regulators by Khy Vijeh, Matt Smith GENERAL INFORMATION may be set using a suitable voltage divider connected to The ADM663A/ADM666A contains a micropower band- LBI. When the voltage on LBI falls below 1.3 V, the open gap reference voltage source; an error amplifier, A1; drain output LBO is pulled low. three comparators, C1, C2, C3, and a series pass output transistor. A P-channel FET and an NPN transistor are 22k used on the ADM663A while the ADM666A uses an NPN VIN VOUT2 output transistor. VOUT1 1.3V 0.5V CIRCUIT DESCRIPTION A1 C1 The internal bandgap reference is trimmed to 1.3 V SENSE ± 30 mV. This is used as a reference input to the error amplifier A1. The feedback signal from the regulator out- SHDN D E C2 VIN–50mV put is supplied to the other input by an on-chip voltage C O VSET divider or by two external resistors. When V SET is at D E C3 ground, the internal divider tap between R1 and R2, pro- R vides the error amplifier’s feedback signal giving a +5 V 50mV output. When V SET is at V IN, the internal divider tap be- R1 tween R2 and R3 provides the error amplifier’s feedback R2 A2 VTC signal giving a +3.3 V output. When V SET is at more than 0.9V 50 mV above ground and less than 50 mV below V IN, the R3 ADM663A GND error amplifier’s input is switched directly to the V SET pin, and external resistors are used to set the output voltage. The external resistors are selected so that the Figure 1. ADM663A Functional Block Diagram desired output voltage gives 1.3 V at V SET. V V Comparator C1 monitors the output current via the IN OUT SENSE input. This input, referenced to V OUT(2), monitors 1.3V 0.5V A1 C1 the voltage drop across a load sense resistor. If the volt- SENSE age drop exceeds 0.5 V, then the error amplifier A1 is disabled and the output current is limited. SHDN D E C2 VIN–50mV The ADM663A has an additional amplifier, A2, which C O VSET provides a temperature proportional output, V TC. If this D E is summed into the inverting input of the error amplifier, C3 R a negative temperature coefficient results at the output. 50mV This is useful when powering liquid crystal displays over R1 LBI wide temperature ranges. LBO R2 C4 The ADM666A has an additional comparator, C4, that 1.3V compares the voltage on the low battery input, LBI, pin R3 ADM666A GND to the internal +1.3 V reference. The output from the comparator drives an open drain FET connected to the Figure 2. ADM666A Functional Block Diagram low battery output pin, LBO. The low battery threshold Both the ADM663A and the ADM666A contain a shut- VIN SENSE +1.3V TO +15V +2V TO +16V RCL OUTPUT down (SHDN) input that can be used to disable the error V INPUT OUT2 amplifier and hence the voltage output. The power con- ADM663A sumption in shutdown reduces to less than 9 µA. ADM666A R2 SHDN Circuit Configurations VSET GND For a fixed +5 V output the V SET input is grounded and no R1 external resistors are necessary. This basic configura- tion is shown in Figure 3. For a fixed +3.3 V output, the Figure 5. Adjustable Output VSET input is connected to V IN as shown in Figure 4. Cur- rent limiting is not being utilized so the SENSE input is Table I. Output Voltage Selection connected to V OUT(2). V V +6V TO +16V SET OUT INPUT VIN SENSE +5V GND +5 V OUTPUT V V +3 V 0.1µF OUT2 IN ADM663A 0.1µF R1/R2 ADJ ADM666A Current Limiting VSET GND SHDN Current limiting may be achieved by using an external current sense resistor in series with V OUT(2). When the voltage across the sense resistor exceeds the internal 0.5 V threshold, current limiting is activated. The sense Figure 3. A Fixed +5 V Output resistor is therefore chosen such that the voltage across +4.5V TO +16V it will be 0.5 V when the desired current limit is reached. INPUT VIN SENSE +3.3V OUTPUT 0.5 VOUT2 = 0.1µF RCL ADM663A I 0.1µF CL ADM666A where R CL is the current sense resistor, I CL is the maxi- VSET GND SHDN mum current limit. The value chosen for R CL should also ensure that the cur- rent is limited to less than the 100 mA absolute maxi- Figure 4. A Fixed +3.3 V Output mum rating and also that the power dissipation will also be within the package maximum ratings. Output Voltage Setting If VSET is not connected to GND or to V IN, the output volt- If current limiting is employed, there will be an addi- age is set according to the following equation: tional voltage drop across the external sense resistor that must be considered when determining the regula- (R1+ R2) tors dropout voltage. V =V × OUT SET R1 If current limiting is not used, the SENSE input should where V SET = 1.30 V. be connected to V OUT(2). In this case, input current should be limited so that in case of short circuited output, The resistor values may be selected by first choosing a device power dissipation does not exceed the rated value for R1 and then selecting R2 according to the fol- maximum. lowing equation: Shutdown Input (SHDN) V The SHDN input allows the regulator to be turned off R2 = R1× OUT ±1 with a logic level signal. This will disable the output and 1. 3 0 reduce the current drain to a low quiescent (9 µA maxi- The input leakage current on V SET is 10 nA maximum. mum) current. This is very useful for low power applica- This allows large resistor values to be chosen for R1 and tions. The SHDN input should be driven with a CMOS R2 with little degradation in accuracy. For example, a logic level signal since the input threshold is 0.3 V. In 1 MΩ resistor may be selected for R1, and then R2 may TTL systems, an open collector driver with a pull-up re- be calculated accordingly. The tolerance on V SET is guar- sistor may be used. anteed at less than ±30 mV so in most applications, fixed If the shutdown function is not being used, then it resistors will be suitable. should be connected to GND. –2– Low Supply or Low Battery Detection High Current Operation The ADM666A contains on-chip circuitry for low power The ADM663A contains an additional output, V OUT1, suit- supply or battery detection. If the voltage on the LBI pin able for directly driving the base of an external NPN falls below the internal 1.3 V reference, then the open transistor. Figure 8 shows a configuration which can be drain output LBO will go low. The low threshold voltage used to provide +5 V with boosted current drive. A 1 Ω may be set to any voltage above 1.3 V by appropriate current sensing resistor limits the current at 0.5 A. resistor divider selection. VIN V R3 = R4 BATT ±1 + 10µF VIN 1. 3 V VOUT1 2N4237 V where R3 and R4 are the resistive divider resistors and OUT2 100Ω ADM663A 1.0Ω VBATT is the desired low voltage threshold. SHDN + SENSE +5V, 0.5A Since the LBI input leakage current is less than 10 nA, 10µF SHUTDOWN VSET GND OUTPUT large values may be selected for R3 and R4 in order to minimize loading. For example, a 6 V low threshold may be set using 10 M Ω for R3 and 2.7 M Ω for R4. Figure 8. ADM663A Boosted Output Current (0.5 A) +2V TO +16V INPUT Temperature Proportional Output VIN SENSE +1.3V TO +15V RCL OUTPUT The ADM663A contains a V TC output with a positive tem- R3 VOUT perature coefficient of +2.5 mV/ °C typ. This may be con- ADM666A R2 LBI nected to the summing junction of the error amplifier VSET R4 (VSET) through a resistor resulting in a negative tempera- SHDN LBO R1 LOW GND ture coefficient at the output of the regulator. This is BATTERY OUTPUT especially useful in multiplexed LCD displays to com- pensate for the inherent negative temperature coeffi- cient of the LCD threshold. At +25 °C, the voltage at the Figure 6. ADM666A Adjustable Output with Low VTC output is typically 0.9 V. The equations for setting Battery Detection both the output voltage and the tempco are given be- Low Output Detection low. If this function is not being used, then V TC should be The circuit in Figure 7 will generate a low LBO when out- left unconnected. put voltage drops below a preset value determined by R2 R2 the following equations: V =V 1+ + (V ±V ) OUT SET R1 R3 SET TC VOUT R2 + R3 = R1 ±1 = ±R2 1. 3 TCVOUT (TCVTC ) R3 V R3=(R1+R2) OL ±1 where V = +1.3 V, V = +0.9 V, TCV = +2.5 mV/ °C 1. 3 SET TC TC SENSE for VOUT = 5.0 V nominal, V OL = 3% of V OUT = 4.85 V and R1 V = 1 MΩ solving the equations simultaneously we will get VOUT2 OUT R2 R2 = 31 k Ω and R3 = 2.82 M Ω.
Load more

Recommended publications
  • Integrated Circuit Implementation for a Gan HFET Driver Circuit Bo Wang
    University of South Carolina Scholar Commons Faculty Publications Computer Science and Engineering, Department of 2010 Integrated Circuit Implementation for a GaN HFET Driver Circuit Bo Wang Jason D. Bakos University of South Carolina - Columbia, [email protected] Antonello Monti Follow this and additional works at: https://scholarcommons.sc.edu/csce_facpub Part of the Computer Engineering Commons Publication Info Published in IEEE Transactions on Industry Applications, Volume 46, Issue 5, 2010, pages 2056-2067. http://ieeexplore.ieee.org/servlet/opac?punumber=28 © 2010 by the Institute of Electrical and Electronics Engineers (IEEE) This Article is brought to you by the Computer Science and Engineering, Department of at Scholar Commons. It has been accepted for inclusion in Faculty Publications by an authorized administrator of Scholar Commons. For more information, please contact [email protected]. 2056 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 46, NO. 5, SEPTEMBER/OCTOBER 2010 Integrated Circuit Implementation for a GaN HFET Driver Circuit Bo Wang, Student Member, IEEE, Marco Riva, Member, IEEE, Jason D. Bakos, Member, IEEE, and Antonello Monti, Senior Member, IEEE Abstract—This paper presents the design and implementation (GaN) devices is limited mainly to telecom and low-power ap- of a new integrated circuit (IC) that is suitable for driving the plications [4]–[6]. Currently available driver integrated circuits new generation of high-frequency GaN HFETs. The circuit, based (ICs) designed for power Si-MOSFET can be adapted to drive upon a resonant switching transition technique, is first briefly described and then discussed in detail, focusing on the design GaN HFET devices, but the relatively low switching frequen- process practical considerations.
    [Show full text]
  • Thesis.Pdf (2.413Mb)
    Faculty of Engineering Science and Technology Design and construction of a half-bridge using wide-bandgap transistors Fredrik Hausvik Vatshelle Master thesis in Electrical Engineering - June 2019 Title: Design and construction of a half-bridge using wide-bandgap transistors Date: 11 June 2019 Classification: Open Author: Fredrik Hausvik Vatshelle Pages: 68 Attachements: 0 Department: Department of Electrical Engineering Type of study: Electrical Engineering Supervisor: Bjarte Hoff Principal: UiT The Artic University of Norway, Campus Narvik Principal contact: Trond Østrem Key words: Transistors, Wide-bandgap, Half-bridge, Simulation, Testing, Design, Power converters. Abstract A continuously increasing demand of electric power makes energy efficiency imperative in modern technology. The transistor is considered as the fundamental element of modern electronic products. Faster switching, lower losses and higher operation temperatures are some of the features provided by new transistor technology. Their abilities could make way for new converter topologies and design. It is also important to elaborate on the component limitations and to explore their traits. Therefore, thorough research regarding these transistors has been done. This thesis goes through design improvements of a single transistor driver, both in form of simulations and experimental testing. Additionally, it discusses suggested solutions on how to build a snubber circuit, handle over current protection and apply dead time. Possible and preferred solutions for these parts are presented through circuit schemes and explanations. These parts should be put together in a half-bridge, as a building block for power converters. Other necessities, for the half-bridge, like control interface is briefly elaborated. Required circuitry for implementing the single transistor driver, is designed and developed in OrCAD CAPTURE.
    [Show full text]
  • Active Gate Drivers for High-Frequency Application of Sic Mosfets
    Active Gate Drivers for High-Frequency Application of SiC MOSFETs By Alejandro Paredes Camacho Thesis submitted in partial fulfilment of the requirement for the PhD degree issued by the Universitat Politècnica de Catalunya, in its Electronic Engineering Program. Supervisors: Dr. Jose Luis Romeral Martínez Dr. Vicent M. Sala Caselles Terrassa, Barcelona December 2019 Active gate drivers for high-frequency application of SiC MOSFETs ii A mi madre, María Luisa Camacho Ramos iii Abstract The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems. For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems. This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters.
    [Show full text]
  • Modulated Output
    http://waikato.researchgateway.ac.nz/ Research Commons at the University of Waikato Copyright Statement: The digital copy of this thesis is protected by the Copyright Act 1994 (New Zealand). The thesis may be consulted by you, provided you comply with the provisions of the Act and the following conditions of use: Any use you make of these documents or images must be for research or private study purposes only, and you may not make them available to any other person. Authors control the copyright of their thesis. You will recognise the author’s right to be identified as the author of the thesis, and due acknowledgement will be made to the author where appropriate. You will obtain the author’s permission before publishing any material from the thesis. Development of a Full-Field Time-of-Flight Range Imaging System A thesis submitted in fulfilment of the requirements for the degree of Doctor of Philosophy in Physics and Electronic Engineering at The University of Waikato by Andrew Dean Payne 2008 © 2008 Andrew Dean Payne Abstract A full-field, time-of-flight, image ranging system or “3D camera” has been developed from a proof-of-principle to a working prototype stage, capable of determining the intensity and range for every pixel in a scene. The system can be adapted to the requirements of various applications, producing high precision range measurements with sub-millimetre resolution, or high speed measurements at video frame rates. Parallel data acquisition at each pixel provides high spatial resolution independent of the operating speed. The range imaging system uses a heterodyne technique to indirectly measure time of flight.
    [Show full text]
  • H Brıdge DC Motor Drıver Desıgn and Implementatıon with Usıng Dspic30f4011
    ISSN(Online): 2319-8753 ISSN (Print): 2347-6710 International Journal of Innovative Research in Science, Engineering and Technology (An ISO 3297: 2007 Certified Organization) Vol. 6, Special Issue 10, May 2017 H Brıdge DC Motor Drıver Desıgn and Implementatıon with Usıng dsPIC30f4011 Tolga Özer1, Sinan Kıvrak2, Yüksel Oğuz3 Department of Electric and Electronic Engineering, Afyon Kocatepe University, Merkez/Afyonkarahisar, Turkey Department of Electric and Electronic Engineering, Ankara Yıldırım Beyazıt University, Ankara, Turkey Department of Electric and Electronic Engineering, Afyon Kocatepe University, Merkez/Afyonkarahisar, Turkey ABSTRACT: Today DC motors are used commonly at lots of electrical application. DC drive systems are often used in many industrial applications such as robotics, actuation and manipulators. These motors are easy to drive, fully controllable and readily available in all sizes and configurations When eximined these applictions dc motors are needed to be operated on variable or constant speed with forward or reverse operation. There are many control technequies to obtain control of different speeds. For this controlling process the electric drive systems are used frequently. Industrial applications are increasingly required to meet higher performance and reliability requirements. The DC motor is an attractive piece of equipment in many industrial applications requiring variable speed and load characteristics due to its ease of controllability. Microcontrollers provide a suitable means of meeting these needs. In this paper, H bridge DC motor driver is designed and implemented. H bridge curcuit is used for controlling DC motor speed and rotating side. The H bridge driver Mosfets are driven by a high frequency PWM signal. Controlling the PWM duty cycle is equivalent to controlling the motor terminal voltage, which in turn adjust directly the motor speed.
    [Show full text]
  • Understanding and Using Electronic Diagrams
    Study Unit Understanding and Using Electronic Diagrams By Thomas Gregory Preview Preview In your studies so far, you’ve learned the basic principles of how electrical circuits provide power for useful work. Basic circuits consist of a power source, components that regulate the flow of current, and loads such as motors, lights, heat- ers, and more complex devices like computers or televisions. Electrical and electronic technicians may work installing, servicing, maintaining, and troubleshooting hundreds of dif- ferent electrical and electromechanical devices from many different manufacturers, on a regular basis. Over the years a standard visual language has evolved that allows designers, engineers, and technicians to effectively describe these elec- trical devices’ functions. In this unit you’ll learn how circuits are described by draw- ings called schematics. These drawings use standard symbols that allow technicians to quickly understand how a circuit is constructed, what function it performs, and how to trouble- shoot the equipment. Schematics are also sometimes called prints or blueprints. Each electrical component has a univer- sally recognized symbol, and schematic drawings typically show the connections between the components. As you learn how the different types of components can be connected, you’ll begin to recognize common circuit configurations that occur repeatedly in many different types of electrical equipment. Knowing these circuit conventions and configurations will help you quickly spot likely problems based on the type
    [Show full text]
  • Development of Optoelectronic Devices and Computational Tools for the Production and Manipulation of Heavy Rydberg Systems
    Development of Optoelectronic Devices and Computational Tools for the Production and Manipulation of Heavy Rydberg Systems by Jeffrey Philippson A thesis submitted to the Department of Physics, Engineering Physics and Astronomy in conformity with the requirements for the degree of Master of Science Queen’s University Kingston, Ontario, Canada September, 2007 Copyright c Jeffrey Philippson, 2007 Abstract Experimental and theoretical progress has been made toward the production and ma- nipulation of novel atomic and molecular states. The design, construction and char- acterization of a driver for an acousto–optic modulator is presented, which achieves a maximum diffraction efficiency of 54 % at 200 MHz, using a commercial modulator. A novel design is presented for a highly sensitive optical spectrum analyzer for displaying laser mode structure in real time. Utilizing programmable microcontrollers to read data from a CMOS image sensor illuminated by the diffraction pattern from a Fabry– P´erot interferometer, this device can operate with beam powers as low as 3.3 µW, at a fraction of the cost of equivalent products. Computational results are presented analyzing the behaviour of a model quantum system in the vicinity of an avoided crossing. The results are compared with calculations based on the Landau–Zener formula, with discussion of its limitations. Further computational work is focused on simulating expected conditions in the implementation of a technique for coherent con- trol quantum states atomic and molecular beams. The work presented provides tools to further the aim of producing large, mono–energetic populations of heavy Rydberg systems. i Acknowledgements I would like to thank the people whose help and support has facilitated the completion of this thesis..
    [Show full text]
  • A Fully Integrated High-Temperature, High-Voltage, BCD-On-SOI Voltage Regulator
    University of Tennessee, Knoxville TRACE: Tennessee Research and Creative Exchange Masters Theses Graduate School 5-2010 A Fully Integrated High-Temperature, High-Voltage, BCD-on-SOI Voltage Regulator Benjamin Matthew McCue [email protected] Follow this and additional works at: https://trace.tennessee.edu/utk_gradthes Part of the VLSI and Circuits, Embedded and Hardware Systems Commons Recommended Citation McCue, Benjamin Matthew, "A Fully Integrated High-Temperature, High-Voltage, BCD-on-SOI Voltage Regulator. " Master's Thesis, University of Tennessee, 2010. https://trace.tennessee.edu/utk_gradthes/646 This Thesis is brought to you for free and open access by the Graduate School at TRACE: Tennessee Research and Creative Exchange. It has been accepted for inclusion in Masters Theses by an authorized administrator of TRACE: Tennessee Research and Creative Exchange. For more information, please contact [email protected]. To the Graduate Council: I am submitting herewith a thesis written by Benjamin Matthew McCue entitled "A Fully Integrated High-Temperature, High-Voltage, BCD-on-SOI Voltage Regulator." I have examined the final electronic copy of this thesis for form and content and recommend that it be accepted in partial fulfillment of the equirr ements for the degree of Master of Science, with a major in Electrical Engineering. Benjamin J. Blalock, Major Professor We have read this thesis and recommend its acceptance: Benjamin J. Blalock, Leon M. Tolbert, Syed K. Islam Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official studentecor r ds.) To the Graduate Council: I am submitting herewith a thesis written by Benjamin Matthew McCue entitled “A Fully Integrated High-Temperature, High-Voltage, BCD-on-SOI Voltage Regulator.” I have examined the final electronic copy of this thesis for content and form and recommend that it be accepted in partial fulfillment of the requirements for the degree of Master of Science, with a major in Electrical Engineering.
    [Show full text]
  • Gate Driver Integrated Circuit with Breakdown Protection for Switch-Mode Power Amplifiers
    Online ISSN 1848-3380, Print ISSN 0005-1144 ATKAFF 57(2), 506–513(2016) Jong-Ryul Yang Gate Driver Integrated Circuit with Breakdown Protection for Switch-mode Power Amplifiers DOI 10.7305/automatika.2016.10.1005 UDK 621.375.4.026.051 Original scientific paper This paper proposes a gate driver integrated circuit to prevent breakdown of switching power amplifiers. The proposed circuit consists of a dead-time generator, level shifters, and a breakdown blocker. The dead-time generator makes non-overlapped input signals and the breakdown blocker detects instantaneous turned-on input signals and resets them to the off-state before the switching power cells are damaged. The circuit is designed using TowerJazz’s 0.18 µm BCD process for a tightly coupled wireless power transfer system. The protecting operation is verified using circuit simulation including layout-dependent characteristics. Key words: Breakdown blocker, dead-time generator, gate driver circuit, switching power amplifiers Pobudni sklop sa zaštitom od kvarnog stanja za pojacaloˇ snage. U ovom radu prikazan je pobudni sklop za sprjecavanjeˇ kvarnog stanja pojacalaˇ snage. Predloženi krug sastoji se od generatora mrtvog vremena, translator razine i sklopa za sprjecavanjeˇ kvarnog stanja. Generator mrtvog vremena tvori nepreklopljene ulazne signale, a sklop za sprjecavanjeˇ kvarnog stanja prepoznaje trenutno paljenje ulaznog signala i resetira ih prije nego su celije´ pojacalaˇ snage oštecene.´ Krug je dizajniran koristeci´ TowerJazz’s 0.18 µm BCD postupak za povezani sustav bežicnogˇ prijenosa snage. Zaštita je verificirana koristeci´ simulaciju kruga ukljucujuˇ ci´ karakteristike povezane s izgledom. Kljucneˇ rijeci:ˇ sklop za sprjecavanjeˇ kvarnog stanja, generator mrtvog vremena, pobudni sklop, pojacaloˇ snage 1 INTRODUCTION are turned off, is a general solution to prevent breakdown [3,4].
    [Show full text]
  • Design Techniques of Highly Integrated Hybrid-Switched-Capacitor-Resonant Power Converters for LED Lighting Applications
    Design Techniques of Highly Integrated Hybrid-Switched-Capacitor-Resonant Power Converters for LED Lighting Applications Chengrui Le Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Graduate School of Arts and Sciences COLUMBIA UNIVERSITY 2020 ©2020 Chengrui Le All Rights Reserved ABSTRACT Design Techniques of Highly Integrated Hybrid-Switched-Capacitor-Resonant Power Converters for LED Lighting Applications Chengrui Le The Light-emitting diodes (LEDs) are rapidly emerging as the dominant light source given their high luminous efficacy, long lift span, and thanks to the newly enacted efficiency standards in favor of the more environmentally-friendly LED technology. The LED lighting market is expected to reach USD 105.66 billion by 2025. As such, the lighting industry requires LED drivers, which essentially are power converters, with high efficiency, wide input/output range, low cost, small form factor, and great performance in power factor, and luminance flicker. These requirements raise new challenges beyond the traditional power converter topologies. On the other hand, the development and improvement of new device technologies such as printed thin-film capacitors and integrated high voltage/power devices opens up many new opportunities for mitigating such challenges using innovative circuit design techniques and solutions. Almost all electric products needs certain power delivery, regulation or conversion cir- cuits to meet the optimized operation conditions. Designing a high performance power converter is a real challenge given the market’s increasing requirements on energy efficiency, size, cost, form factor, EMI performance, human health impact, and so on. The design of a LED driver system covers from high voltage AC/DC and DC/DC power converters, to high frequency low voltage digital controllers, to power factor correction (PFC) and EMI filter- ing techniques, and to safety solutions such as galvanic isolation.
    [Show full text]
  • The Acoustics of Tesla Coils Robert Joseph Connick Worcester Polytechnic Institute
    Worcester Polytechnic Institute Digital WPI Major Qualifying Projects (All Years) Major Qualifying Projects August 2011 The Acoustics of Tesla Coils Robert Joseph Connick Worcester Polytechnic Institute Follow this and additional works at: https://digitalcommons.wpi.edu/mqp-all Repository Citation Connick, R. J. (2011). The Acoustics of Tesla Coils. Retrieved from https://digitalcommons.wpi.edu/mqp-all/3606 This Unrestricted is brought to you for free and open access by the Major Qualifying Projects at Digital WPI. It has been accepted for inclusion in Major Qualifying Projects (All Years) by an authorized administrator of Digital WPI. For more information, please contact [email protected]. The Acoustics of Tesla Coils A Major Qualifying Project Report Submitted to the Faculty of the WORCESTER POLYTECHNIC INSTITUTE In partial fulfillment of the requirements for the Degree of Bachelors of Science By ____________________ Robert Connick Date: 4/ 8/11 Approved: ________________________________________ Professor Germano S. Iannachione, Major Advisor ________________________________________ Professor Frederick Bianchi, Major Advisor Abstract: This project is an exploration into the acoustic qualities of Tesla Coils and the physics of sound generation. It includes the construction of a Solid State Tesla Coil capable of replicating the audio production properties of a conventional speaker, as well as a unique musical interface designed to transform the coil into a non conventional musical instrument. i Acknowledgements Although this project was primarily a solo effort, there are a number of people without whom none of this would be possible. I would first like to thank my advisors Professor Germano Iannachionne, and Professor Frederick Bianchi, both of whom never failed to provide the materials or support necessary to keep the project going.
    [Show full text]
  • Design of a High Powered LED Driver
    Design of a High Powered LED Driver By Omar Renteria EE 460-07 Project Advisor: David B. Braun Senior Project ELECTRICAL ENGINEERING DEPARTMENT California Polytechnic State University San Luis Obispo 2015 TABLE OF CONTENTS Section Page List of Figures ................................................................................................................................ iii List of Tables ................................................................................................................................. vi Abstract ......................................................................................................................................... vii I. Introduction ..........................................................................................................................1 II. Customer Needs, Requirements, and Specifications ...........................................................4 III. Functional Decomposition ...................................................................................................5 IV. Design ..................................................................................................................................9 V. LED Driver ........................................................................................................................12 VI. Creating LED PSpice Model .............................................................................................20 VII. Importing Model Files to PSpice .......................................................................................25
    [Show full text]