Stannides and Intermetallic Tin Compounds – Fundamentals and Applications
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Auction V Iewing
AN AUCTION OF Commemorative Medals and Numismatic Books The Richmond Suite (Lower Ground Floor) The Washington Hotel 5 Curzon Street Mayfair London W1J 5HE Wednesday 30 May 2012 12:00 Free Online Bidding Service www.dnw.co.uk AUCTION Weekdays, Monday 21 May to Friday 25 May 16 Bolton Street, Mayfair, London W1 strictly by appointment only Monday 28 May and Tuesday 29 May 16 Bolton Street, Mayfair, London W1 Public viewing, 10:00 to 17:00 Wednesday 30 May 16 Bolton Street, Mayfair, London W1 Public viewing, 08:00 to end of the Sale Appointments to view: 020 7016 1700 or auctions @dnw.co.uk VIEWING Catalogued by Christopher Webb, Jim Brown and A.N. Other Photography by Ian Kington In sending commissions or making enquiries please contact Christopher Webb or Jim Brown Catalogue price £15 C ONTENTS Please note: The auction will take place in one session, starting at 12.00 British Medals from the Collection of James Spencer........................................................................1-159 British Medals from other properties............................................................................................160-280 Medals of Cuba from the Collection of the late Edward Roehrs....................................................281-353 Russian Medals from an Old Collection, the property of a Lady ..................................................354-380 World Medals from other properties .............................................................................................381-450 British and World Medals – Lots ...................................................................................................451-506 -
Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors
Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors S. Mukherjee1, N. Kodali1, D. Isheim2, S. Wirths3, J. M. Hartmann4, D. Buca3, D. N. Seidman2, and O. Moutanabbir1,* 1 Department of Engineering Physics, École Polytechnique de Montréal, Montréal, C. P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7, Canada. 2 Department of Materials Science and Engineering and Northwestern University Center for Atom-Probe Tomography, Northwestern University, Evanston, IL 60208-3108, USA. 3 Peter Grünberg Institute 9 and JARA - FIT, Forschungszentrum Juelich, Juelich 52425, Germany. 4 CEA, LETI, Minatec Campus, 17 rue des Martyrs, Grenoble 38054, France. The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in non-equilibrium epitaxial Sn-rich group IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools including frequency distribution analysis, partial radial distribution functions, and nearest neighbor analysis were employed in order to evaluate and compare the behavior of the three elements to their spatial distributions in an ideal solid solution. This atomistic-level analysis provided clear evidence of an unexpected repulsive interaction between Sn and Si leading to the deviation of Si atoms from the theoretical random distribution. This departure from an ideal solid solution is supported by first principal calculations and attributed to the tendency of the system to reduce its mixing enthalpy throughout the layer-by-layer growth process. PACS: 68.35 bd, 38.35 bg, 34.20 Gj, 68.35 Dv 1 The assumption that the arrangement of atoms within the crystal lattice is perfectly random is a broadly used approximation to establish the physical properties of semiconductor alloys. -
THE DEGRADATION of PEWTER in ANTIQUE LACE BOBBINS Home Page
THE DEGRADATION OF PEWTER IN ANTIQUE LACE BOBBINS Home Page Parent Page THE DEGRADATION OF PEWTER IN ANTIQUE LACE BOBBINS. This article needs a couple of pics. Pewter Degradation Introduction The pewter used in bobbins is one of the prettiest decorative processes that makers used. Unfortunately during the passage of time much of the pewter by some makers has degraded and has either fallen off the bobbin or has become swollen, misshapen and even crumbly. The following is my attempt, with the help of many people on the web and especially my friend Neil Keats, to explain this phenomenon. Pewter. Pewter is an alloy (i.e. a mixture) of tin and lead. The better the quality of pewter the higher the percentage of tin is in the alloy. Tin exists in three forms, depending on the temperature. This is called polymorphism (poly-many, morphism-shapes). At temperatures between 13 and 160 degrees C, it is called White tin, and the atoms (think of them as little balls in this description) are packed closely together to form the metal. Hence, it is a dense metal, i.e. it is hard. file:///C|/Documents%20and%20Settings/My%20Docu...s/Pewter%20degredation/Pewter%20degredation.htm (1 of 4) [6/9/2003 8:15:25 PM] THE DEGRADATION OF PEWTER IN ANTIQUE LACE BOBBINS Below 13 degrees C the atoms rearrange to become more loosely packed (actually in the same configuration as diamond). This shows first as wart-like structures on the surface, and eventually leads to the tin crumbling into a powder. This is called "tin pest", and is what happened to the buttons on Napoleon's soldiers coats. -
Growth and Characterization of Silicon-Germanium-Tin Semiconductors for Future Nanophotonics Devices" (2018)
University of Arkansas, Fayetteville ScholarWorks@UARK Theses and Dissertations 12-2018 Growth and Characterization of Silicon- Germanium-Tin Semiconductors for Future Nanophotonics Devices Bader Saad Alharthi University of Arkansas, Fayetteville Follow this and additional works at: https://scholarworks.uark.edu/etd Part of the Electromagnetics and Photonics Commons, and the Semiconductor and Optical Materials Commons Recommended Citation Alharthi, Bader Saad, "Growth and Characterization of Silicon-Germanium-Tin Semiconductors for Future Nanophotonics Devices" (2018). Theses and Dissertations. 3012. https://scholarworks.uark.edu/etd/3012 This Dissertation is brought to you for free and open access by ScholarWorks@UARK. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of ScholarWorks@UARK. For more information, please contact [email protected], [email protected]. Growth and Characterization of Silicon-Germanium-Tin Semiconductors for Future Nanophotonics Devices A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering with a concentration in Electrical Engineering by Bader Saad Alharthi King Saud University Bachelor of Science in Physics, 2003 King Fahd University of Petroleum and Minerals Master of Science in Physics, 2009 University of Arkansas Master of Science in Electrical Engineering, 2018 December 2018 University of Arkansas This dissertation is approved for recommendation to the Graduate Council. Hameed A. Naseem, Ph.D. Shui-Qing (Fisher) Yu, Ph.D. Dissertation Director Dissertation Co-Director Simon Ang, Ph.D. Zhong Chen, Ph.D. Committee Member Committee Member Hugh Churchill, Ph.D. Committee Member Abstract The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid- infrared optoelectronics and high speed devices. -
High-Entropy Alloy: Challenges and Prospects
Materials Today Volume 19, Number 6 July/August 2016 RESEARCH Review High-entropy alloy: challenges and prospects RESEARCH: Y.F. Ye, Q. Wang, J. Lu, C.T. Liu and Y. Yang* Centre for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Kowloon, Hong Kong High-entropy alloys (HEAs) are presently of great research interest in materials science and engineering. Unlike conventional alloys, which contain one and rarely two base elements, HEAs comprise multiple principal elements, with the possible number of HEA compositions extending considerably more than conventional alloys. With the advent of HEAs, fundamental issues that challenge the proposed theories, models, and methods for conventional alloys also emerge. Here, we provide a critical review of the recent studies aiming to address the fundamental issues related to phase formation in HEAs. In addition, novel properties of HEAs are also discussed, such as their excellent specific strength, superior mechanical performance at high temperatures, exceptional ductility and fracture toughness at cryogenic temperatures, superparamagnetism, and superconductivity. Due to their considerable structural and functional potential as well as richness of design, HEAs are promising candidates for new applications, which warrants further studies. Introduction When designing alloys, researchers previously focused on the From ancient times, human civilization has striven to develop new corners of a phase diagram to develop a conventional alloy, which materials [1], discovering new metals and inventing new alloys occupy only a small portion of the design space, as illustrated by that have played a pivotal role for more than thousands of years. -
Open Phd Thesis - Final Draft.Pdf
The Pennsylvania State University The Graduate School College of Earth and Mineral Sciences DEPOSITION, CHARACTERIZATION, AND THERMOMECHANICAL FATIGUE OF NICKEL ALUMINIDE AND RUTHENIUM ALUMINIDE THIN FILMS A Dissertation in Materials Science and Engineering by Jane A. Howell © 2010 Jane A. Howell Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy December 2010 The dissertation of Jane A. Howell was reviewed and approved* by the following: Suzanne E. Mohney Professor of Materials Science and Engineering Dissertation Co-Advisor Co-Chair of Committee Christopher L. Muhlstein Associate Professor of Materials Science and Engineering Dissertation Co-Advisor Co-Chair of Committee Joseph R. Flemish Senior Scientist and Professor of Materials Science and Engineering Clifford J. Lissenden Professor of Engineering Science and Mechanics Joan M. Redwing Professor of Materials Science and Engineering Chair, Intercollege Graduate Degree Program in Materials Science and Engineering *Signatures are on file in the Graduate School ii ABSTRACT Intermetallic thin films have properties that make them attractive for applications such as metallizations, high temperature coatings, microelectromechanical systems, and diffusion barrier layers. In this study B2 aluminide films (NiAl and RuAl) have been deposited and characterized. Both intermetallics could be deposited at temperatures near room temperature using co- sputtering with an as-deposited resistivity of 45.5 ± 1.5 μΩcm for NiAl and 157 ± 4 μΩcm for RuAl. Ni/Al multilayers with a wavelength of 30 nm and below were fully reacted to form NiAl after annealing for 2 h at 400°C. These films had a resistivity of 15.5-26.7 μΩcm (wavelengths from 15.4-30 nm) after a 4 h anneal at 400°C, and the lower values of resistivity correspond to films with larger wavelengths. -
Structure and Properties of Cast Ti-Al-Si Alloys
materials Article Structure and Properties of Cast Ti-Al-Si Alloys Anna Knaislová 1 , Pavel Novák 1,* , Jiˇrí Linhart 1, Ivo Szurman 2, KateˇrinaSkotnicová 2 , Jan Juˇrica 2 and Tomáš Ceganˇ 2 1 Department of Metals and Corrosion Engineering, University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6, Czech Republic; [email protected] (A.K.); [email protected] (J.L.) 2 Department of Non-Ferrous Metals, Refining and Recycling, Faculty of Materials Science and Technology, VSB—Technical University of Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba, Czech Republic; [email protected] (I.S.); [email protected] (K.S.); [email protected] (J.J.); [email protected] (T.C.)ˇ * Correspondence: [email protected] Abstract: Intermetallic compounds based on Ti-Al- (Si) are attractive materials with good thermal stability and low density. However, the production of these materials is quite complicated. Partially modified conventional methods of melting metallurgy are most often used due to availability, possible high productivity, and relatively low production costs. Therefore, some technologies for the production of intermetallics based on Ti-Al are currently available, but with certain disadvantages, which are caused by poor casting properties or extreme reactivity of the melt with crucibles. Some shortcomings can be eliminated by modifying the melting technology, which contributes to increasing the cost of the process. The work deals with the preparation of Ti-Al-Si intermetallic compounds with different contents of aluminum and silicon, which were produced by centrifugal casting in an induction vacuum furnace Linn Supercast-Titan. This process could contribute to the commercial use of these alloys in the future. -
Effect of Si on Fe-Rich Intermetallic Formation and Mechanical Properties of Heat- Treated Al-Cu-Mn-Fe Alloys Yuliang Zhao1, 2
Effect of Si on Fe-rich intermetallic formation and mechanical properties of heat- treated Al-Cu-Mn-Fe alloys Yuliang Zhao1, 2, Weiwen Zhang1*, Chao Yang1, Datong Zhang1, Zhi Wang1 1National Engineering Research Center of Near-net-shape Forming for Metallic Materials, South China University of Technology, Guangzhou, 510641, China 2School of Engineering & Computer Science, University of Hull, East Yorkshire, HU6 7RX, UK *Corresponding author. Tel: +86-20-87112022, Fax: +86-20-87112111. E-mail: [email protected] Abstract: The effect of Si on Fe-rich intermetallics formation and mechanical properties of heat-treated squeeze cast Al-5.0Cu-0.6Mn-0.7Fe alloy was investigated. Our results show that increasing Si content promotes the formation of Al15(FeMn)3(SiCu)2 (α-Fe), and varying the morphology of T (Al20Cu3Mn2) where the size decreases and the amount increases. The major reason is that Si promotes heterogeneous nucleation of the intermetallics leading to finer precipitates. Si addition significantly enhances ultimate tensile strength and yield strength of the alloys. The strengthening effect is mainly owing to the dispersoid strengthening by increasing volume fraction of T phase and less harmful α-Fe with a compact structure, which make the cracks more difficult to initiate and propagation during tensile test. The squeeze cast Al-5.0Cu-0.6Mn-0.7Fe alloy with 1.1% Si shows significantly improved mechanical properties than the alloy without Si addition, which has tensile strength of 386 MPa, yield strength of 280 MPa and elongation of 8.6%. Key Words: Al; casting; microstructure 1 I. Introduction Al-Cu alloys have been widely used in automobile manufacturing, space technology and aerospace industry owing to their high specific strength, good heat resistance and excellent fatigue properties [1-3]. -
Metal-Metal Bonding in Engel-Brewer Intermetallics: "Anomalous" Charge Transfer in Zrpt
J. Am. Chem. SOC.1993, 115, 2357-2362 2357 Metal-Metal Bonding in Engel-Brewer Intermetallics: "Anomalous" Charge Transfer in ZrPt, Hua Wang and Emily A. Carter* Contribution from the Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90024- 1569. Received July 9, 1992 Abstract: Ab initio generalized valence bond, configuration interaction, and multiconfiguration self-consistent field calculations have been performed to examine the properties of the early-late transition metal bimetallic cluster ZrPt,, as a representative model of Engel-Brewer compounds. Such intermetallic compounds are known to be extremely thermally stable in the bulk form. We find the atomization energy of the ZrPt, cluster at its bulk geometry to be at least 101.1 kcal/mol, which supports the Engel-Brewer suggestion that an alloy of Zr and Pt should be particularly stable. However, we find that the charge transfer occurs in the opposite direction from that assumed by the Engel-Brewer theory; namely, the Zr atom is predicted to donate approximately one electron to the three Pt atoms. The high thermal stability of these compounds is attributed to a combination of localized, highly polar, sd-sd bonds between Zr and Pt that enhance the normal metallic (spp) bonding present in homometallic Pt clusters. In order to better understand intermetallic metal-metal bonding and charge transfer, calculations for low-lying states of ZrPt dimer have also been carried out. Bond energies, vibrational frequencies, equilibrium geometries, and charge distributions are predicted. I. Introduction point and large negative free energies of formation certainly Materials that exhibit high thermal stability and resistance to confirm the stability of these alloys. -
Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (Hereafter Referred to As “IEC Publication(S)”)
This is a preview - click here to buy the full publication IEC/TS 62647-22 ® Edition 1.0 2013-09 TECHNICAL SPECIFICATION Process management for avionics – Aerospace and defence electronic systems containing lead-free solder – Part 22: Technical guidelines INTERNATIONAL ELECTROTECHNICAL COMMISSION PRICE CODE XB ICS 03.100.50; 31.020; 49.060 ISBN 978-2-8322-1112-0 Warning! Make sure that you obtained this publication from an authorized distributor. ® Registered trademark of the International Electrotechnical Commission This is a preview - click here to buy the full publication – 2 – TS 62647-22 IEC:2013(E) CONTENTS FOREWORD ........................................................................................................................... 5 INTRODUCTION ..................................................................................................................... 7 1 Scope .............................................................................................................................. 9 2 Normative references ...................................................................................................... 9 3 Terms, definitions and abbreviations ............................................................................. 10 3.1 Terms and definitions ....................................................................................... 10 3.2 Abbreviations ................................................................................................... 15 4 Approach ...................................................................................................................... -
Hierarchical Microstructure Strengthening in a Single Crystal
www.nature.com/scientificreports OPEN Hierarchical microstructure strengthening in a single crystal high entropy superalloy Yung‑Ta Chen1,2, Yao‑Jen Chang1,3, Hideyuki Murakami2,4, Taisuke Sasaki5, Kazuhiro Hono5, Chen‑Wei Li6, Koji Kakehi6, Jien‑Wei Yeh1,3 & An‑Chou Yeh1,3* A hierarchical microstructure strengthened high entropy superalloy (HESA) with superior cost specifc yield strength from room temperature up to 1,023 K is presented. By phase transformation pathway through metastability, HESA possesses a hierarchical microstructure containing a dispersion of nano size disordered FCC particles inside ordered L12 precipitates that are within the FCC matrix. The average tensile yield strength of HESA from room temperature to 1,023 K could be 120 MPa higher than that of advanced single crystal superalloy, while HESA could still exhibit an elongation greater than 20%. Furthermore, the cost specifc yield strength of HESA can be 8 times that of some superalloys. A template for lighter, stronger, cheaper, and more ductile high temperature alloy is proposed. Te development of high-entropy alloys (HEAs) has broken through the frame of conventional alloys by explor- ing the vast composition space of multi-principle elements 1–6, and their extraordinary mechanical properties have been a subject of interest, for examples, single-phase CoCrFeMnNi HEA showed high tensile strength of 1,280 MPa with elongation up to 71% at cryogenic temperature 7; the compressive strength could reach 2,240 MPa 8 9 at 298 K for Al0.5CoCrFe0.5NiTi0.5 HEA and 1,520 MPa at 873 K for Al0.5CrNbTi2V0.5 HEA due to the presence of intermetallic phases, such as σ8, B28 and Laves9. -
Tin/Lead Reflow Profile Supplement
TIN/LEAD ALLOYS REFLOW PROFILE GUIDELINES The information provided is a guideline only. Your profile will depend upon many factors including customer requirements, component limitations, oven characteristics, board layout, etc. Ultimately, quality requirements should drive the process, not adherence to these guidelines. Ideally, profile measurements are to be collected on a populated assembly with the reflow profile recorded for each product being processed. It is common for the same profile settings to be used for multiple assemblies. Reflow profile data should be collected, analyzed and recorded for each assembly part number at the beginning of individual production runs. There are two basic profile types: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). RTS profiles are suitable for use in most applications for enhanced solder performance. RSS profiles are appropriate when the assembly has a large thermal mass or large ∆T. Typical RTS Profile Typical RSS Profile Profile Length: 3-4.5 minutes from Profile Length: 3-4.5 minutes from 40°C to peak 205-235°C 40°C to peak 205-235°C Ramp Rate: 1-3°C per second Soak: 130-180°C for 30-90 seconds Time Above Liquidus: 30-90 seconds Ramp Rate: 1-3°C per second Cool Down Rate: < 4°C per second Time Above Liquidus: 30-90 seconds Cool Down Rate: < 4°C per second Wetting Improvement Wetting issues, whether component (lead-free) or substrate related can be improved through profiling. If the wetting issue is global, it can often be improved with proper profiling technique. If the wetting issue is component specific, it is likely a plating issue with the component/substrate.