Advances in Analog Mixed Signal Design Solutions 2 (Keynote) Paul Lo Synopsys, USA K3 the Opportunities for China IC Industries N/A (Keynote) T.Y
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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012) Xian, China 29 October – 1 November 2012 Pages 1-808 IEEE Catalog Number: CFP12829-PRT ISBN: 978-1-4673-2474-8 1/2 Contents K1 Emerging Nanotechnology for Future Nanoelectronics Applications N/A (Keynote) Robert Chau Intel, USA K2 Advances in Analog Mixed Signal Design Solutions 2 (Keynote) Paul Lo Synopsys, USA K3 The Opportunities for China IC Industries N/A (Keynote) T.Y. Chiu SMIC, China K4 Trends of Automotive Systems and “the roles of Silicon" N/A (Keynote) Domenico ROSSI ST Microelectronics, Italy K5 Universal Memory 7 (Keynote) Chung Lam IBM, USA K7 Advanced Design Enablement Platforms for Highly Scaled Technologies Under Harsh 12 Environments (Keynote) Yanfeng Li Platform Design Automation,Inc, China S01_01 Reduction of Low - Frequency Noise in Si MOSFETs by Using Nanowire Channel 13 1,2, 1,2 1,2 3 3 3 1,2 (Invited) K. Ohmori *, W. Feng , R. Hettiarachchi , Y. Lee , S. Sato , K. Kakushima , M.Sato , K.Fukuda2, M.Niwa1,2, K. Yamabe1, K. Shiraishi1,2, H. Iwai3, and K. Yamada1,2 1 2 3 University of Tsukuba, Japan; JST -CREST, Chiyoda, Tokyo; Tokyo Institute of Technology, Japan; 4 Tsukuba, Ibaraki, Japan S01_02 Physics-Based Analytical Model of Nanowire Tunnel-FETs 17 (Invited) Elena Gnani*, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani University of Bologna, Italy S01_03 III-V MOSFETs: From Planar to 3D 21 (Invited) Jiangjiang J. Gu, and Peide D. Ye Purdue University, U.S.A S01_04 An Analytical Threshold Voltage Model of Strained Surrounding-gate MOSFETs 25 Yao Liu, Zunchao Li* Xi'an Jiaotong University, China S01_05 Total Ionizing Dose Effects on Triple-Gate Fets 28 Shi-Yao Liu*, Wei He, Jian-Min Cao, Si-Wen Huang, Xiao-Jin Zhao Shenzhen University, China S02_01 Delay-line based Temperature Sensors for On-chip Thermal Management 31 (Invited) Shuang Xie and Wai Tung Ng University of Toronto, Canada S02_02 An Output-Capacitor-Free Buck Converter with Nano-Second-DVS and 35 Sub-Switching-Cycle Load Transient Response (Invited) Yi Zhang and Dongsheng Ma University of Texas, USA S02_03 A Fully on-Chip LDO Regulator with a Novel PSRR Boosting Circuit 39 Quan Zhou, Shuxu Guo, Qiang Li, Zhaohan Li, Jingyi Song, Yuchun Chang* Jilin University, China S02_04 Fault Diagnosis of Analog Circuits Based on Multi-frequency Test and Neural Network N/A Method 1 1 1 1 2 Cheng Wang *, Yun Ye , Hai-lang Liang , Jin He *, and Mansun Chan -I- 1 2 Peking university shenzhen SOC Key Laboratory, China; Hong Kong University of Science and Technology, Hong Kong S02_05 A Flash Window ADC for DVS-enabled Digital Controlled DC–DC Converters 45 Hai-Qi Li, Sheng-Lei Wang, Yuan Gao, Yan Song, Li Geng* Xi'an Jiaotong University, China S02_06 A 4-40MHz Active-RC Chebyshev LPF with Digital-assisted Calibration for 48 Direct-conversion DVB-S/S2 & ABS-S TV Tuners Song-Ting Li, Jian-Cheng Li*, Xiao-Chen Gu, Hong-Yi Wang, Zhao-Wen Zhuang National University of Defense Technology, China S03_01 Advanced Metal-Gate/High-k CMOS with Small EOT and Better High Field Mobility 51 1 1 2 2 3 4 2 (Invited) Albert Chin *, W.B. Chen , P.C.Chen , Y.H.Wu , C.C.Chi , Y.J.Lee , K.S.Chang-Liao and C. H.Kuan5 1Natl. Chiao Tung University, Taiwan; 2Natl. Tsing Hua University, Taiwan; 3Natl. Tsing Hua University, Taiwan; 4Natl.Nano Devices Lab., Taiwan; 5Natl. Taiwan University, Taiwan S03_02 Ge dangling bond defects at the condensation-grown (100)Si1-xGex/SiO2 interface: N/A Multifrequency ESR study (Invited) Andre Stesmans and Valery V. Afanas’ev University of Leuven, Belgium S03_03 Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation 58 Meng Lin, Quanxin Yun, Min Li, Zhiqiang Li, Xia An*, Ming Li*, Xing Zhang and Ru Huang* Peking University, China S03_04 Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and 61 Nitrogen-Plasma-Passivation Quanxin Yun, Meng Lin, Xia An*, Ming Li*, Zhiqiang Li, Min Li, Xing Zhang and Ru Huang* Peking University, China S03_05 Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after 64 Germanidation Technique Zhiqiang Li, Xia An*, Min Li, Quanxin Yun, Meng Lin, Ming Li*, Xing Zhang, and Ru Huang* Peking University, China S03_06 Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture 67 Min Li, Meng Lin, Quanxin Yun, Zhiqiang Li, Xia An*, Ming Li*, Xing Zhang and Ru Huang* Peking University, China S04_01 Downscaled graphene nanodevices: fabrication and ab initio study 70 (Invited) Hiroshi Mizuta1,2*, Zakaria Moktadir1, Stuart A. Boden1, NimaKalhor1, Shuojin Hang1, MarekE Schmidt1, Nguyen Tien Cuong2, DamHieu Chi2, Nobuo Otsuka2, Muruagnathan Manoharan2, Yoshishige Tsuchiya1, Harold Chong1, Harvey N. Rutt1 and Darren M. Bagnall1 1Univ. of Southampton, UK; 2Japan Advanced Institute of Science and Technology (JAIST), Japan S04_02 Device Concepts Using Two-Dimensional Electronic Materials: Graphene, MoS2, etc. 74 (Invited) Frank Schwierz and Jörg Pezoldt Institut für Mikro- und Nanotechnologien, Germany S04_03 Direct Growth of Graphene on Nitride and Oxide Substrates 78 1 1 1 1 1 2 (Invited) Jeffry Kelber *, Zhou Mi , Sneha Gaddam , Cao Yuan , Sawyer Foyle , Lingmei Kong and Peter Dowben2 1University of North Texas, USA; 2University of Nebraska-Lincoln, USA S04_04 A tradeoff between on and off current for armchair graphene nanoribbon field effect 82 transistors explained by the complex band structure Tongsheng Xia1*, Pilong Yang1, Liujun Zhang1, and Hongge Li1 Beihang University, China S05_01 Interface Engineering of High- K and High- Mobility Substrate Interface 85 (Invited) Durga Misra New Jersey Institute of Technology, USA S05_02 Dielectric Relaxation of Lanthanide-based Ternary Oxides 89 (Invited) Ce Zhou Zhao1,2,3*, J. Tao3, Chun Zhao1,2, M. Werner4, S. Taylor2, and P. R. Chalker4 1Xi’an Jiaotong - Liverpool University, Suzhou, China; 2Department of Electrical Engineering and Electronics, University of Liverpool, UK; 3Xi’an Jiaotong University, China; 4Centre for Materials and Structures, School of Engineering, University of Liverpool, UK -II- S05_03 Off-state leakage current of nano-s caled MOSFETs with high-k gate dielectric 93 (Invited) Hong-Xia Liu1*, Fei Ma1, Ji-Bin Fan1, Xiao-Jiao Fan1, Chen-Xi Fei1, Yi Luo 2, Chen Liu2 1Xidian University, China; 2Xi'an Semipower Electronic Technology Co., China S05_04 Dielectric Relaxation Model in High-k Materials:Simplified Kohlrausch-Williams-Watts 97 Function Peng Fei Wang1,2, Chun Zhao1,2, Ce Zhou Zhao1,2,* and Gang Liu3 1University of Liverpool, United Kingdom; 2Department of Electrical and Electronic Engineering, Xi'an Jiaotong- Liverpool University, Suzhou, China; 3Mathematics and Physics Teaching Centre, Xi'an Jiaotong-Liverpool University, Suzhou, China S05_05 Epitaxial growth of single crystalline lattice-matched Pr0.9Y1.1O3 on SrO-passivated Si(001): 100 growth orientation and crystallization tailoring by interface engineering G.Niu1*, P.Zaumseil1, M.A.Schubert1, M. H. Zoellner1, J. Dabrowski and T. Schroeder1,2 1IHP, Im Technologiepark 25, Germany; 2BTU Cottbus, Germany S06_01 High-frequency Behavior of One-dimensional Nanocarbons 103 1 1 1,2 1 3 (Invited) Anshul A. Vyas *, Francisco Madriz , Nobuhiko Kanzaki , Patrick Wilhite , Xuhui Sun , and Cary Y.Yang1 1Santa Clara University, Santa Clara; 2Hitachi High-Technologies, Japan; 3Soochow University, China S06_02 Effectiveness of Reservoir Length on Electromigration lifetime enhancement for ULSI 107 Interconnects with advanced technology nodes (Invited) Cher Ming Tan*and Chunmiao Fu Nanyang Technological University, Singapore S06_03 Interconnect Materials Challenges for sub 20 nm Technology Nodes: Ultra Low-k 111 Dielectrics (Invited) Mikhail R. Baklanov imec, Belgium S06_04 Cu/Airgap Integration on 90n m Cu BEOL Process Platform 114 Xiaoxu Kang*, Qingyun Zuo, Xinxue Wang, Shaohai Zeng, Shoumian Chen Shanghai IC R&D Center, China S06_05 Study on power performance of TaN thin film resistors by D.C.magnetron sputtering N/A Bin Wang1*, Qian-tao Cao1, Zhen-guo Song1 Science and Technology on Electronic Test & Measurement Laboratory, China S07_01 Building a User Friendly Infrastructure for Compact Model Development in the 120 Nano-device Era (Invited) Hao Wang*, Lining Zhang and Mansun Chan Hong Kong University of Science and Technology, Hong Kong S07_02 Multi terminal Signal Integrity Analysis 124 (Invited) Goro SUZUKI University of Kitakyusyu, JAPAN S07_03 Multi-level Reliability Simulation for IC Design 130 (Invited) Ketul Sutaria, Jyothi Velamala, Yu Cao Arizona State University, USA S07_05 An Accurate Dynamic Power Model on FPGA Routing Resources 134 Xifan Tang1*, Lingli Wang1, Hu Xu2 1Fudan University, china; 2Laboratory of Integrated System, EPFL, Lausanne, Switzerland S07_06 A Symbolic Approach for Detecting Conflicts in Verilog's Non Blocking Assignments 137 Peng Liu1, Huibiao Zhu1, Naiyong Jin2 1East China Normal University, China ; 2Verification Group, Synopsys Inc., Shanghai S08_01 Characterization of Silicon Nanowire Biosensors and Solar Cells 140 (Invited) Myung-Dong Ko1, Tai-Uk Rim1, Chang-Ki Baek2, Dae Mann Kim3, and Yoon-Ha Jeong1,2* 1Department of Electrical Engineering, POSTECH, Korea; 2Department of Creative IT Excellence Engineering, POSTECH, Korea; 3Korea Institute for Advanced Study, Korea S08_02 SOI Technologies from Microelectronics to Microsystems-Meeting the More than Moore 144 Roadmap Requirements (Invited) Jean-Pierre Raskin 1Université catholique de Louvain (UCL); 2Institute of Information and Communication Technologies, Electronics