Advances in Analog Mixed Signal Design Solutions 2 (Keynote) Paul Lo Synopsys, USA K3 the Opportunities for China IC Industries N/A (Keynote) T.Y

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

(ICSICT 2012)

29 October – 1 November 2012

Pages 1-808

IEEE Catalog Number: CFP12829-PRT ISBN: 978-1-4673-2474-8

1/2 Contents

K1 Emerging Nanotechnology for Future Nanoelectronics Applications N/A (Keynote) Robert Chau Intel, USA K2 Advances in Analog Mixed Signal Design Solutions 2 (Keynote) Paul Lo Synopsys, USA K3 The Opportunities for China IC Industries N/A (Keynote) T.Y. Chiu SMIC, China K4 Trends of Automotive Systems and “the roles of Silicon" N/A (Keynote) Domenico ROSSI ST Microelectronics, Italy K5 Universal Memory 7 (Keynote) Chung Lam IBM, USA K7 Advanced Design Enablement Platforms for Highly Scaled Technologies Under Harsh 12 Environments (Keynote) Yanfeng Li Platform Design Automation,Inc, China S01_01 Reduction of Low - Frequency Noise in Si MOSFETs by Using Nanowire Channel 13 1,2, 1,2 1,2 3 3 3 1,2 (Invited) K. Ohmori *, W. Feng , R. Hettiarachchi , Y. Lee , S. Sato , K. Kakushima , M.Sato , K.Fukuda2, M.Niwa1,2, K. Yamabe1, K. Shiraishi1,2, H. Iwai3, and K. Yamada1,2 1 2 3 University of Tsukuba, Japan; JST -CREST, Chiyoda, Tokyo; Tokyo Institute of Technology, Japan; 4 Tsukuba, Ibaraki, Japan S01_02 Physics-Based Analytical Model of Nanowire Tunnel-FETs 17 (Invited) Elena Gnani*, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani University of Bologna, Italy S01_03 III-V MOSFETs: From Planar to 3D 21 (Invited) Jiangjiang J. Gu, and Peide D. Ye Purdue University, U.S.A S01_04 An Analytical Threshold Voltage Model of Strained Surrounding-gate MOSFETs 25 Yao Liu, Zunchao Li* Xi'an Jiaotong University, China S01_05 Total Ionizing Dose Effects on Triple-Gate Fets 28 Shi-Yao Liu*, Wei He, Jian-Min Cao, Si-Wen Huang, Xiao-Jin Zhao Shenzhen University, China S02_01 Delay-line based Temperature Sensors for On-chip Thermal Management 31 (Invited) Shuang Xie and Wai Tung Ng University of Toronto, Canada S02_02 An Output-Capacitor-Free Buck Converter with Nano-Second-DVS and 35 Sub-Switching-Cycle Load Transient Response (Invited) Yi Zhang and Dongsheng Ma University of Texas, USA S02_03 A Fully on-Chip LDO Regulator with a Novel PSRR Boosting Circuit 39 Quan Zhou, Shuxu Guo, Qiang Li, Zhaohan Li, Jingyi Song, Yuchun Chang* Jilin University, China S02_04 Fault Diagnosis of Analog Circuits Based on Multi-frequency Test and Neural Network N/A Method Cheng Wang1*, Yun Ye1, Hai-lang Liang1, Jin He1*, and Mansun Chan2

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1 2 Peking university shenzhen SOC Key Laboratory, China; Hong Kong University of Science and Technology, Hong Kong S02_05 A Flash Window ADC for DVS-enabled Digital Controlled DC–DC Converters 45 Hai-Qi Li, Sheng-Lei Wang, Yuan Gao, Yan Song, Li Geng* Xi'an Jiaotong University, China S02_06 A 4-40MHz Active-RC Chebyshev LPF with Digital-assisted Calibration for 48 Direct-conversion DVB-S/S2 & ABS-S TV Tuners Song-Ting Li, Jian-Cheng Li*, Xiao-Chen Gu, Hong-Yi Wang, Zhao-Wen Zhuang National University of Defense Technology, China S03_01 Advanced Metal-Gate/High-k CMOS with Small EOT and Better High Field Mobility 51 1 1 2 2 3 4 2 (Invited) Albert Chin *, W.B. Chen , P.C.Chen , Y.H.Wu , C.C.Chi , Y.J.Lee , K.S.Chang-Liao and C. H.Kuan5 1Natl. Chiao Tung University, Taiwan; 2Natl. Tsing Hua University, Taiwan; 3Natl. Tsing Hua

University, Taiwan; 4Natl.Nano Devices Lab., Taiwan; 5Natl. Taiwan University, Taiwan S03_02 Ge dangling bond defects at the condensation-grown (100)Si1-xGex/SiO2 interface: N/A Multifrequency ESR study (Invited) Andre Stesmans and Valery V. Afanas’ev University of Leuven, Belgium S03_03 Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation 58 Meng Lin, Quanxin Yun, Min Li, Zhiqiang Li, Xia An*, Ming Li*, Xing Zhang and Ru Huang* Peking University, China S03_04 Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and 61 Nitrogen-Plasma-Passivation Quanxin Yun, Meng Lin, Xia An*, Ming Li*, Zhiqiang Li, Min Li, Xing Zhang and Ru Huang* Peking University, China S03_05 Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after 64 Germanidation Technique Zhiqiang Li, Xia An*, Min Li, Quanxin Yun, Meng Lin, Ming Li*, Xing Zhang, and Ru Huang* Peking University, China S03_06 Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture 67 Min Li, Meng Lin, Quanxin Yun, Zhiqiang Li, Xia An*, Ming Li*, Xing Zhang and Ru Huang* Peking University, China S04_01 Downscaled graphene nanodevices: fabrication and ab initio study 70 (Invited) Hiroshi Mizuta1,2*, Zakaria Moktadir1, Stuart A. Boden1, NimaKalhor1, Shuojin Hang1, MarekE Schmidt1, Nguyen Tien Cuong2, DamHieu Chi2, Nobuo Otsuka2, Muruagnathan Manoharan2, Yoshishige Tsuchiya1, Harold Chong1, Harvey N. Rutt1 and Darren M. Bagnall1 1Univ. of Southampton, UK; 2Japan Advanced Institute of Science and Technology (JAIST),

Japan S04_02 Device Concepts Using Two-Dimensional Electronic Materials: Graphene, MoS2, etc. 74 (Invited) Frank Schwierz and Jörg Pezoldt Institut für Mikro- und Nanotechnologien, Germany S04_03 Direct Growth of Graphene on Nitride and Oxide Substrates 78 1 1 1 1 1 2 (Invited) Jeffry Kelber *, Zhou Mi , Sneha Gaddam , Cao Yuan , Sawyer Foyle , Lingmei Kong and Peter Dowben2 1University of North Texas, USA; 2University of Nebraska-Lincoln, USA S04_04 A tradeoff between on and off current for armchair graphene nanoribbon field effect 82 transistors explained by the complex band structure Tongsheng Xia1*, Pilong Yang1, Liujun Zhang1, and Hongge Li1 Beihang University, China S05_01 Interface Engineering of High- K and High- Mobility Substrate Interface 85 (Invited) Durga Misra New Jersey Institute of Technology, USA S05_02 Dielectric Relaxation of Lanthanide-based Ternary Oxides 89 (Invited) Ce Zhou Zhao1,2,3*, J. Tao3, Chun Zhao1,2, M. Werner4, S. Taylor2, and P. R. Chalker4 1Xi’an Jiaotong - Liverpool University, Suzhou, China; 2Department of Electrical Engineering and Electronics, University of Liverpool, UK; 3Xi’an Jiaotong University, China; 4Centre for Materials and Structures, School of Engineering, University of Liverpool, UK

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S05_03 Off-state leakage current of nano-s caled MOSFETs with high-k gate dielectric 93 (Invited) Hong-Xia Liu1*, Fei Ma1, Ji-Bin Fan1, Xiao-Jiao Fan1, Chen-Xi Fei1, Yi Luo 2, Chen Liu2 1Xidian University, China; 2Xi'an Semipower Electronic Technology Co., China S05_04 Dielectric Relaxation Model in High-k Materials:Simplified Kohlrausch-Williams-Watts 97 Function Peng Fei Wang1,2, Chun Zhao1,2, Ce Zhou Zhao1,2,* and Gang Liu3 1University of Liverpool, United Kingdom; 2Department of Electrical and Electronic Engineering, Xi'an Jiaotong- Liverpool University, Suzhou, China; 3Mathematics and Physics Teaching Centre, Xi'an Jiaotong-Liverpool University, Suzhou, China S05_05 Epitaxial growth of single crystalline lattice-matched Pr0.9Y1.1O3 on SrO-passivated Si(001): 100 growth orientation and crystallization tailoring by interface engineering G.Niu1*, P.Zaumseil1, M.A.Schubert1, M. H. Zoellner1, J. Dabrowski and T. Schroeder1,2 1IHP, Im Technologiepark 25, Germany; 2BTU Cottbus, Germany S06_01 High-frequency Behavior of One-dimensional Nanocarbons 103 1 1 1,2 1 3 (Invited) Anshul A. Vyas *, Francisco Madriz , Nobuhiko Kanzaki , Patrick Wilhite , Xuhui Sun , and Cary Y.Yang1 1Santa Clara University, Santa Clara; 2Hitachi High-Technologies, Japan; 3Soochow University,

China S06_02 Effectiveness of Reservoir Length on Electromigration lifetime enhancement for ULSI 107 Interconnects with advanced technology nodes (Invited) Cher Ming Tan*and Chunmiao Fu Nanyang Technological University, Singapore S06_03 Interconnect Materials Challenges for sub 20 nm Technology Nodes: Ultra Low-k 111 Dielectrics (Invited) Mikhail R. Baklanov imec, Belgium S06_04 Cu/Airgap Integration on 90n m Cu BEOL Process Platform 114 Xiaoxu Kang*, Qingyun Zuo, Xinxue Wang, Shaohai Zeng, Shoumian Chen Shanghai IC R&D Center, China S06_05 Study on power performance of TaN thin film resistors by D.C.magnetron sputtering N/A Bin Wang1*, Qian-tao Cao1, Zhen-guo Song1 Science and Technology on Electronic Test & Measurement Laboratory, China S07_01 Building a User Friendly Infrastructure for Compact Model Development in the 120 Nano-device Era (Invited) Hao Wang*, Lining Zhang and Mansun Chan Hong Kong University of Science and Technology, Hong Kong S07_02 Multi terminal Signal Integrity Analysis 124 (Invited) Goro SUZUKI University of Kitakyusyu, JAPAN S07_03 Multi-level Reliability Simulation for IC Design 130 (Invited) Ketul Sutaria, Jyothi Velamala, Yu Cao Arizona State University, USA S07_05 An Accurate Dynamic Power Model on FPGA Routing Resources 134 Xifan Tang1*, Lingli Wang1, Hu Xu2 1Fudan University, china; 2Laboratory of Integrated System, EPFL, Lausanne, Switzerland S07_06 A Symbolic Approach for Detecting Conflicts in Verilog's Non Blocking Assignments 137 Peng Liu1, Huibiao Zhu1, Naiyong Jin2 1East China Normal University, China ; 2Verification Group, Synopsys Inc., Shanghai S08_01 Characterization of Silicon Nanowire Biosensors and Solar Cells 140 (Invited) Myung-Dong Ko1, Tai-Uk Rim1, Chang-Ki Baek2, Dae Mann Kim3, and Yoon-Ha Jeong1,2* 1Department of Electrical Engineering, POSTECH, Korea; 2Department of Creative IT Excellence

Engineering, POSTECH, Korea; 3Korea Institute for Advanced Study, Korea S08_02 SOI Technologies from Microelectronics to Microsystems-Meeting the More than Moore 144 Roadmap Requirements (Invited) Jean-Pierre Raskin 1Université catholique de Louvain (UCL); 2Institute of Information and Communication

Technologies, Electronics and Applied Mathematics (ICTEAM), Belgium

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S08_03 Construction of Graphene-based modified Electrochemical Sensor by Electropolymerization 148 Yuhua Yu1 and Jia Zhou1* Fudan University, China S08_04 A Glucose Biosensor Based On Piezoresistive Microcantilevers 151 Jianlin Zhang1,2*, Jiancheng Yang1, 2, Xiaomei Yu1,2 Peking University, China S08_05 Polysilicon Wire Inorporated with Mixture of Silica Nanoparticles/γ-APTES Nanocomposite 154 Prepared by UV-assisted Liquid Phase Deposition for pH Sensing Jing-Jenn Lin1*, Chia-Pin Kuo2, You-Lin Wu 2, Po-Yen Hsu 2 National Chi Nan University, Taiwan, ROC S08_06 A Monolithic Lab-on-a-Chip for Electrochemical Detection 157 Jianfeng Chen1, Yuhua Yu1, Sheng Yang1, Shih-Kang Fan2, Jia Zhou1* 1Fudan University, China; 2National Chiao Tung University, Hsinchu, Taiwan S09_02 Advanced Ion Implantation Applications for Leading Edge Transistor Design 160 (Invited) Hans-Joachim L. Gossmann and Yuri Erokhin Applied Materials – Varian Semiconductor Equipment, USA S09_03 Substrate Engineering Using Smart Cut TM and Smart Stacking TM for Next-Generation 164 Advanced LSIs (Invited) Makoto Yoshimi1), Xavier Cauchy2), Eric Desbonnets2), Ionut Radu2), and Christophe Maleville2) 1Chiyoda-ku, Japan; 2Parc Technologique des Fontaines, France S09_04 Achievement of non-selectivity barrier slurry by adding H3PO4 and Its application in 166 patterned wafers CMP Xinhuan Niu, Chenwei Wang, Juan Wang, Guoqi Lu，Yuling Liu Hebei University of Technology, China S09_05 A New Method to Repair Ion Implantation-induced Damage in the Gate Dielectric Layer of 169 MOSFETs Yun-Fei Liu, Hai- Zhou Yin*, Hui- Long Zhu Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China S10_01 Millimeter-Wave and Terahertz CMOS Design 172 (Invited) Minoru Fujishima Hiroshima University, Japan S10_02 An Overview of Challenges and Current Status of Si-based Terahertz Monolithic Integrated 176 Circuits (Invited) Jae-Sung Rieh, Yongho Oh, Daekeun Yoon, Namhyung Kim, Dong-Hyun Kim, Jongwon Yun, Hyunchul Kim, and Kiryong Song Korea University, Korea S10_03 A 200Mb/s 3-5GHz Ping-Pong Structure UWB Transmitter Using Synchronized Pulse 180 Position Modulation Leicheng Chen, Hui Zhao, Yan Song, Zeqiang Chen and Li Geng* Xi’an Jiaotong University, China S10_04 A 433/868/915MHz Bands Multi-Mode Low-Power FSK/GFSK RF Transceiver for Short N/A Range Applications Qi Zhang, Ning Wang, Dunshan Yuan and Hui Wang CIS Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, China S10_05 A 0.18μm 1V 5GHz LC VCO Designed for WSN Applications 186 Yu-Jie Wang*, Xiang-Ning Fan, Member IEEE, Bin Li Southeast University, China S10_06 A Ultra-Wideband, Downconversion Folded Mixer in 0.13-um CMOS N/A Xuelian Liu，John F. McDonald Rensselaer Polytechnic Institute, USA S11_01 A Green Campus Project and Advances in semiconductor nanostructures for Photovoltaic 192 applications (Invited) Deli Wang1, Byron Washom1, Edward T. Yu2, and Paul K. L. Yu1* 1University of California at San Diego, La Jolla, USA; 2University of Texas at Austin, USA S11_02 Growth of High Quality SnS van der Waals Epitaxies on Graphene Buffer Layer for 196 Photovoltaic Applications (Invited) W. Wang1, K.K.Leung1, W.K.Fong1, S.F. Wang1, Y.Y.Hui2, S.P.Lau2and C. Surya1,*

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1,2The Hong Kong Polytechnic University, Hong Kong, China S11_03 High Performance of Large - sized Dye Sensitized Solar Cells Based On A Novel Low-cost 200 Metal Grids Manufactured Process 1,2 1,2 2 1,2 2 2 2 Guangwei Du , Yan Wang , Ziqing Lu , Fei Yang , Xu Wang , Lifeng Liu , Dedong Han , Yi Wang2, Xing Zhang2 and infeng Kang2* 1Peking University Shenzhen Graduate School, China; 2Peking University, China S11_04 Fabrication and Characterization of Boron-Doped Silicon Microchannel Plates as 203 Lithium-Ion Microbatteries Anodes Fei Wang, Shaohui Xu, Shanshan Zhu, Lianwei Wang * East China Normal University, China S11_05 A New GaP/a-Si:H/Bulk Solar Cell 206 ian-Yuan Wang*, Jyi-Tsong Lin, Ching-yao Pai, Yu-Sheng Kuo, Yi-Chuen Eng, Po-Hsieh Lin National Sun Yat-Sen University, Taiwan S11_06 Thickness Effect of Nanocrystal TiO2 Photoanodes on Dye Sensitized Solar Cells (DSSC) 209 Performances 1,2 2 1,2 2 2 2 Yan Wang , Zi-Qing Lu , Guang-Wei Du , Xu Wang , De-Dong Han , Li-Feng Liu *, Yi Wang2, Xiao-Yan Liu2, Jin-Feng Kang2* 1Peking University Shenzhen Graduate School, China; 2Peking University, China S12_01 Oxide based memristive devices 212 (Invited) J. Joshua Yang*, M.-X. Zhang, Feng Miao, John Paul Strachan, Antonio C. Torrezan, Matthew D. Pickett, Wei Yi, Byung Joon Choi, Janice H. Nickel, Gilberto Medeiros-Ribeiro and R. Stanley Williams* Hewlett-Packard Co, USA S12_02 A Self-Rectifying and Forming-Free HfOx based-High Performance Unipolar RRAM 216 (Invited) H.Y. Yu and X.A. Tran1 1South University of Science and Technology of China, China; 2Nanyang Technological

University, Singapore S12_03 Physical Mechanism of Resistive Switching and Optimization Design of Cell in Oxide-based 220 RRAM (Invited) Jinfeng Kang*, Bin Gao, Bing Chen, Peng Huang, Feifei Zhang, Lifeng Liu, Xiaoyan Liu Peking University, China S12_04 High Performance Multilevel Data Storage in TaTiN/HfOx/Pt Based RRAM Using Bipolar 224 and Unipolar Combined Switching Mode 1,2 2 2 2 1,2 2 2 Bing Chen , Ye Xin Deng , Bin Gao , Rui Liu , Long Ma , Peng Huang , Fei Fei Zhang , *Li Feng Liu2, Xiao Yan Liu2, *Jin Feng Kang2 1Peking University Shenzhen Graduate School, China; 2Peking University, China S12_05 Performance Improvement by Stack Structure in Flexible Resistive Random Access 227 Memory Run-Chen Fang, Wen Yang, Qing-Qing Sun*, Peng Zhou, Peng-Fei Wang, David Wei Zhang Fudan University, China S13_01 Experimental Study on Deformation Potential at MOS Interface 230 (Invited) Ken Uchida1,2* and Teruyuki Ohashi1,2 1Keio University, Japan; 2Tokyo Institute of Technology, Japan S13_02 A Proposed High Manufacturability Strain Technology for High-k/Metal Gate SiGe channel 231 UTBBCMOSFET (Invited) Wen-Kuan Yeh1*, Wenqi Zhang1, Y.-L.Yang2, P. Y. Chen3 1National University of Kaohsiung, Taiwan; 2National Kaohsiung Normal

University,Taiwan; 3I-Shou University, Taiwan S13_03 On the Variability and Front-Back Coupling of the Low-frequency Noise in UTBOX SOI 234 nMOSFETs 1,2,3 1 1,4 4 4 4 1 S. D dos Santos , E. Simoen , V. Strobel , B.Cretu , J.-M.Routoure , R.Carin , M.Aoulaiche , M.Jurczak1, J.A.Martino2and C. Claeys1,3* 1Imec, Belgium; 2University of São Paulo, Brazil; 3KU Leuven, Belgium; 4Université de Caen

Basse-Normandie, France S13_04 On the AC Random Telegraph Noise (RTN) in MOS Devices: An Improved Multi-phonon 237 based Model Nanbo Gong, Runsheng Wang*, Changze Liu, Jibin Zou, Ru Huang* Peking University, China

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S14_01 Heterogeneous 3D Integration Technology and New 3D LSIs 240 (Invited) Mitsumasa Koyanagi1*, Kang-Wook Lee1, Takafumi Fukushima1and Tetsu Tanaka2 Tohoku University, Japan S14_02 Thermal Stress Characteristics and Reliability Impact on 3-D ICs Containing 244 Through-Silicon-Vias 1 2 1 1 3 3 (Invited) Tengfei Jiang *, Suk-Kyu Ryu , Qiu Zhao , Jay Im , Ho-Young Son , Kwang-Yoo Byun , Rui Huang2, and Paul S. Ho1 1,2University of Texas, Austin; 3SK Hynix Inc., Korea S14_03 Monolithic 3D- ICs with Single Grain Si Thin Film Transistors 247 (Invited) R. Ishihara, M.R. Tajari Mofrad, J. Derakhshandeh, Negin Golshani, and C.I.M. Beenakker Delft University of Technology, Delft, Netherlands S14_04 Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via 251 1,2 1 1 1 1 3 1 Min Miao *, Yunhui Zhu , Yuan Bian , Xin Sun , Shenglin Ma , Qinghu Cui , Xiao Zhong , Runiu Fang1, Jing Chen1, Yufeng Jin1 1Peking University, China; 2Beijing Information Science and Technology University,

China; 3Peking University Shenzhen Graduate School, China S15_01 Gaussian Monocycle Pulse CMOS Transmitter with On-Chip Integrated Antenna and 254 High-k Dielectric Slab Waveguide (Invited) Takamaro Kikkawa Hiroshima University, Japan S15_02 A 40-Gb/s Low-Power Wireline Transceiver Architecture with Multi-Phase 258 Injection-Locked Clocking Scheme (Invited) Wei-Xin Gai*, Te Han Peking University, China S15_03 A Novel Baseband Digital Signal Processor IC for HINOC 262 1 1 2 3 2 2 2 Chun Yang , Cheng Zhang , Hanwen Sun , Xiaoxin Cui , Shi Zhang , Weitao Pan , Bing Zhang , Zhiliang Qiu2, Hongbin Li1 1Peking University, China; 2Xidian University, China; 3Peking University, China S15_04 A Low Power Digital Baseband Transceiver for WBANs 265 Weiyang Liu, Haiyong Wang and Nanjian Wu* State Key Laboratory for Super lattices and Microstructures Institute of Semiconductors, Chinese

Academy of Sciences, China S15_06 A Configurable Active-RC Filter for Half-duplex Transceiver 268 Cao Sun, Fu-Le Li, Wei-Tao Li, Han-Jun Jiang Tsinghua University, China S16_01 Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 271 interface buffer layer (Invited) Yi-Men Zhang, Qing-Wen Song, Yu-Ming Zhang, Xiao-Yan Tang, Ren-Xu Jia, Yue-Hu Wang, Hong-Liang Lü, Ya-Jun Duo, and Chen Liu Xidian University, China S16_02 Degradation and Recovery Property of Schottky Barrier Height of AlGaN/GaN High 275 Electron Mobility Transistors under Reverse AC Electrical Stress Lei Shi, Shi-Wei Feng*, Chun-Sheng Guo and Hui Zhu Beijing University of Technology, China S16_03 A Short-Contacted Double Anodes IGBT 278 Weizhong Chen1*, Bo Zhang1, Zehong Li1, Min Ren1, Zhaoji Li1 University of Electronic Science and Technology of China, China S16_04 Potential floating layer SOI LDMOS for breakdown voltage enhancement 281 Zhi Zheng*, Wei Li, and Ping Li University of Electronic Science and Technology of China, China S16_05 A New SJ VDMOS with an Extended HK Dielectric-Filling Trench 284 Qi Wang, Pei Wang, Yong-Heng Jiang, Kun Zhou, Guo-Liang Yao, Xiao-Rong Luo* University of Electronic Science and Technology of China, China S16_06 High Voltage SJ-LDMOS with Charge-Balanced Pillar and N-Buffer Layer 287 Wei Wu*, Bo Zhang, Jian Fang, ZhaoJi Li University of Electronic Science and Technology of China, China S16_07 A Reverse Conducting IGBT with Low On-state Voltage and Turn off Loss 290 Bo Jiang, Frank X.C. Jiang, Zhigui Li, Xinnan Lin*

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Peking University Shenzhen Graduate School, China S17_01 Atomically Controlled CVD Technology of Group IV Semiconductors for Ultralarge Scale 293 Integration (Invited) Junichi Murota1,*, Masao Sakuraba1 and Bernd Tillack2,3 1 2 3 Tohoku University, Japan; IHP, Germany; Technische Universität Berlin, Germany S17_02 Surface Modification of Optoelectronic and Biomedical Materials Using Plasma-Based and 297 Related Technologies (Invited) Paul K Chu* City University of Hong Kong, China S17_03 Quantum Dot Superlattice Structure for High Efficiency Solar Cells Utilizing a Bio-template 299 and Damage-free Neutral Beam Etching (Invited) Seiji Samukawa1,2,3 1,2 3 Tohoku University, Japan; Japan Science and Technology Agency, Japan S17_04 Applications of PureB and PureGaB Ultrashallow Junction Technologies 303 (Invited) L.K. Nanver*, A. Sammak, A Šaki ć, V. Mohammadi, J. Derakhshandeh, K.R.C. Mok, L. Qi, N.

Golshani, T.M.L. Scholtes, W.B. de Boer Delft University of Technology, Delft S18_02 A3.6-µW Sub-1V Fast-Transient-Response Output-Capacitor-Free LDO Regulator in 307 0.13-µm CMOS Technology Xi Qu*, Ze-Kun Zhou, Xin Ming, Bo Zhang University of Electronic Science and Technology of China, China S18_03 A Novel Current-Limit Strategy Used in High Power Step-Down Converter 310 Zekun Zhou1*, Huifang Wang1, Yue Shi2, Nie Li1, Xin Ming1, Bo Zhang1 University of Electronics Science and Technology of China, China S18_04 A Novel Low Power Wide Supply Voltage Range CMOS Temperature Sensor with 313 -0.2/0.5℃Error from -20℃to 60℃ Gang Chen, Xiaoyong Xue*, Qing Dong, Fanjie Xiao, Hao Chen, Yinyin Lin Fudan University, China S18_05 A 4th-Order Active-Gm-RC Low-pass Filter with RC Time Constant Auto-tuning for 316 Reconfigurable Wireless Receivers Liu Junbo*, Fan Xiangning, Bao Kuan Southeast University, China S18_06 A Closed-loop System with DC Sensing Method for Vibratory Gyroscopes 319 Tingting Tao, Wengao Lu*, Ran Fang, Yacong Zhang, Zhongjian Chen Peking University, China S18_07 A Radiation Detection Readout Circuit with Current Feedback Baseline Holder 322 Xiao-Lu Chen, Ya-Cong Zhang*, Wen-Gao Lu, Zhong-Jian Chen Peking University, China S19_01 Dielectric Breakdown– Recovery in Logic and Resistive Switching in Memory – Bridging 325 the Gap between the Two Phenomena (Invited) KinLeong Pey1,*, Nagarajan Raghavan2, Xing Wu1, 2, Wenhu Liu2and Michel Bosman3 1Singapore University of Technology and Design (SUTD), Singapore; 2NanyangTechnological University (NTU), Singapore; 3A*STAR Institute of Materials Research and Engineering (IMRE), Singapore S19_02 Soft Errors in Advanced CMOS Technologies 331 (Invited) R. D. Schrimpf1*, M.A. Alles1, F. El Mamouni1, D. M. Fleetwood1, R. A. Weller1, and R. A.

Reed1 Vanderbilt University, USA S19_03 A Physics Based Model for NBTI in p-MOSFETs 335 (Invited) Souvik Mahapatra*, Nilesh Goel and Kaustubh Joshi Indian Institute of Technology Bombay, India S19_04 New Understanding on the Single-Trap Response under NBTI Stress and the Resulted 339 Stochastic Degradation in Nanoscale MOSFETs Pengpeng Ren1, Changze Liu1, Runsheng Wang1*, Nanbo Gong1, Jinhua Liu2, Hanming Wu2, Ru

Huang1* 1Peking University, China; 2Semiconductor Manufacturing International Corporation (SMIC),

China

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S19_05 A Reliability Model for CMOS Circuit Based on Device Degradation 342 J.Peng*, D.M.Huang, G.F.Jiao, M.F.Li Fudan University, China S20_01 Graphene Nanoelectronics: Overview from Post-Silicon Perspective 345 (Invited) Bin Yu State University of New York, USA S20_02 Scalable fabrication of high performance graphene FETs with self-aligned buried gates 347 (Invited) Yanjie Wang1*, Bo-Chao Huang1, Ming Zhang1, Congqin Miao2, Ya-Hong Xie2, and Jason C. S.

Woo1 1 2 University of California, USA; University of California, USA S20_03 ZnO nanorod array based optoelectronic device with graphene as transparent electrode 351 Ting-Ting Feng, Dan Xie*, Hai-Ming Zhao, Tian-Ling Ren Tsinghua University, People’s Republic of China S21_01 Unified Regional Modeling of GaN HEMTs with the 2DEG and DD Formalism 354 (Invited) Xing Zhou1*, Junbin Zhang1, Binit Syamal1, Siau Ben Chiah1, Hongtao Zhou1, and Li Yuan2 1 2 Nanyang Technological University, Singapore; Institute of Microelectronics, Singapore S21_02 3D Parallel Full Band Ensemble Monte Carlo Devices Simulation for Nano Scale Devices 358 Application (Invited) Xiaoyan Liu1*, Kangliang Wei1, Gang Du1, Wei Zhang2, Pingwen Zhang2 1 2 Peking University, China; Peking University, China S21_03 A New Model of Stacked Transformers Considering Skin and Substrate Effects 362 Qian Zhao1, Jun Liu1, Zhiping Yu1, Lingling Sun1, Hao Yu2 1 2 Hangzhou Dianzi University, China; Nanyang Technological University, Singapore S21_04 Potential and Drain Current Modeling of Surrounding Gate MOSFET Including Polysilicon 365 Depletion Zunchao Li1*, Jinpeng Xu2, LiangLiang Zhang3, Lili Zhang1 1Xi’an Jiaotong University, China; 2Lianyungang JARI Electronics Co., LTD, China; 3Xi’an

Jiaotong University, China S21_05 Simulation of Band-to-Band Tunneling in Si/Ge and Si/Si1-xGex Heterojunctions by Using 368 Monte Carlo Method Kangliang Wei, Lang Zeng, Juncheng Wang, Yahua Peng, Gang Du, Xiaoyan Liu* Peking University, China S21_06 Backside Reflector using Metallic Mirror and ALD-TiO2/Al2O3 DBR for GaN-Based LED 371 Hongjun Chen1, 2, Shengkai Wang1, Bing Sun1, Hao Guo2, Wei Zhao1, Hudong Chang1, Xiong

Zhang2 and Honggang Liu1* 1Institute of Microelectronics of Chinese Academy of Sciences, China; 2 Southeast University,

China S22_01 CNT/graphene technologies for future carbon-based interconnects 374 (Invited) Mizuhisa Nihei*, Akio Kawabata, Tomo Murakami, Motonobu Sato, and Naoki Yokoyama National Institute of Advanced Industrial Science and Technology (AIST), Japan S22_02 Formation and Movement of Voids in Copper Interconnect Structures 378 (Invited) Roberto Lacerda de Orio and Siegfried Selberherr Institute for Microelectronics, Austria S22_03 3DIC Stacked System Technology and Application 382 (Invited) Yi-Jen Chan*, Wei-Chung Lo Industrial Technology Research Institute (ITRI), Taiwan S22_04 Direct Copper Electrodeposition onto Cobalt Adhesion Layer in Alkaline Bath 386 Wen-Zhong Xu, Jing-Xuan Wang, Hai-Sheng Lu, Xu Zeng, Jing-Bo Xu and Xin-Ping Qu* Fudan University, China S22_05 The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers 389 Jing-Xuan Wang, Wen-Zhong Xu, Fei Chen, Hai-Sheng Lu, Xu Zeng and Xin-Ping Qu* Fudan University, China S23_01 Output Bit Selection for Test Response Compaction Based on a Single Counter 392 (Invited) Kuen-Jong Lee1, Wei-Cheng Lien1, Tong-Yu Hsieh2 1 2 National Cheng Kung University, Taiwan; National Sun Yat-sen University, Taiwan S23_02 Challenges and Opportunities of ESL Design Automation 396 (Invited) Zhiru Zhang, Deming Chen

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Cornell University, USA; University of Illinois, USA S23_03 Streamlining HW-SW Architecture Development, Verification and Validation 400 Qamrul Hasan*, Wendong Hu, Priyanka Ankolekar, Pan Lijun Spansion INC, USA S23_04 Realization of China military RFID air interface protocol based on software-defined radio 403 Bing-Bing Zhang1*, Qing Yang1, Hong-Yi Wang1, Jian-Cheng Li1 National University of Defense Technology, China S23_05 A Modeling and Mapping Method for Coarse/Fine Mixed-grained Reconfigurable 406 Architecture Zhaotong Li, Zheng Huang, Shuai Chen, Xuegong Zhou*, Wei Cao and Lingli Wang Fudan University, China S23_06 Wire Sizing Regulation Algorithm for VLSI Interconnect Timing Optimization 410 Xin-Sheng Wang1, 2*, Liang Han2, Xing-Chun Liu2, Ming-Yan Yu1, 2 1 2 Harbin Institute of Technology, China; Harbin Institute of Technology at Weihai, Weihai, China S24_01 Oxygen-Related Border Traps in MOS and GaN Devices 413 (Invited) D. M. Fleetwood, 1,2,* T. Roy, 3 X. Shen2, Y. S. Puzyrev2, E. X. Zhang1, R. D. Schrimpf1, and S.

T. Pantelides2,1 1Vanderbilt University, USA; 2Vanderbilt University, USA; 3Georgia Institute of Technology,

USA S24_02 AlGaN/GaN Metal-2DEG Tunnel Junction FETs with Normally-off Operation, High 417 On-State Current and Low Off-State Leakage (Invited) Kevin J. Chen*, Li Yuan and Hongwei Chen Hong Kong University of Science and Technology, Hong Kong S24_03 Fabrication Characteristics of 1.2kV SiC junction barrier Schottky rectifiers with etched 421 implant junction termination extension Xiao-Chuan Deng1*, Fei Yang2, He Sun1, Cheng-Yuan Rao1, Yong Wang2, Hao Wu1 and Bo

Zhang1 1University of Electronic Science and Technology of China, PR China; 2The National Key

Laboratory of ASIC, PR China S24_05 Effects of surface traps on the breakdown voltage of passivated AlGaN/GaN HEMTs under 424 high-field stress Zi-Qi Zhao1*, De-Wei Liao2 and Jiang-Feng Du1 1 2 University of Electronic Science and Technology of China, China; Pingxiang College, China S24_06 Source/Drain Ohmic Contact Optimization for GaSb pMOSFETs 427 Bing Sun1*, Li-Shu Wu1, 2, Hu-Dong Chang1, Wei Zhao1, Bai-Qing Xue1, Hong-Gang Liu1 1Institute of Microelectronics of Chinese Academy of Sciences, P. R. China; 2Southeast

University, P. R. China S25_01 Reliability of Inversion Channel InGaAs n-MOSFETs 430 (Invited) Ming-Fu Li1, Guangfan Jiao1, Yi Xuan2, Daming Huang1, and Peide D. Ye2 1 2 Fudan University, China; Purdue University, USA S25_02 Future Logic Device Technologies beyond the 28nm node 434 (Invited) Dong-won Kim, Siyoung Choi, Jong Shik Yoon, Chilhee Chung Samsung Electronics Co., South Korea S25_03 Investigations of junctionless nanowire transistors with non-uniform channel 438 Yunxi Zhu, Haijun Lou, Binghua Li, Xinnan Lin Peking University Shenzhen Graduate School, China S25_04 Stress Management for CESL Based Strained PMOSFET Using Trench Structure 441 Qian Luo*, Bin Liu, Qi Yu, Xiang-zhan Wang, Jing-chun Li University of Electronic Science and Technology of China, China S25_05 A Very Low Specific On-resistance High-voltage SOI Lateral MOSFET 444 Zhi Zheng*, Wei Li, Hui Li and Ping Li University of Electronic Science and Technology of China, Chengdu 610054, China, China S25_06 Impact of Total Ionizing Dose on Various nMOSFET Structures N/A Rui-QiangSong1, Shu-MingChen1*, Jian-JunChen1and Jun-RuiQin1 National University of Defense Technology, China S26_01 Demystifying Bilateral Feedback Analysis 450 (Invited) Yun Chiu

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University of Texas at Dallas, USA S26_02 A Control and Readout Circuit with Capacitive Mismatch Auto-Compensation for MEMS 454 Vibratory Gyroscope Ran Fang, Wengao Lu*, Tingting Tao, Guannan Wang, Zhongjian Chen, Yacong Zhang,

Dunshan Yu Peking University, China S26_03 An Offset-compensated Switched-Capacitor Interface Circuit for Closed-loop MEMS 457 Capacitive Accelerometer Ting-Ting Zhang, Hao-Jiong Li, Jing-Qing Huang, Meng Zhao, Li-Chen Hong, Ya-Cong Zhang*,

Wen-Gao Lu, Zhong-Jian Chen Peking University, China S26_04 Time Divided Architecture for Closed Loop MEMS Capacitive Accelerometer 460 Jingqing Huang, Tingting Zhang, Meng Zhao, Lichen Hong, Yacong Zhang*, Wengao Lu,

Zhongjian Chen, Yilong Hao Peking University, China S26_05 Minimum Energy Point Tracking Circuit Based on PSM for Digital Loads 463 Ping Luo*, Xiang Geng, Ye Zhang, Yikun Mo, Shaowei Zhe University of Electronic Science and Technology of China, P.R. China S26_06 Highly Linear OTA with 3rd-Order Nonlinearity Superposition Techniques for Gm-C 466 Low-Pass Filter with 34dBm IIP3 Jiayi Wang1, Chen Li2*, Le Ye1*, Huailin Liao1*, and Ru Huang1 Peking University, China S26_07 Novel Differential Logic Using Floating-Gate MOS Transistors 469 Guo-Qiang Hang1,2*, Yi-Nan Mo2, Xuan-Chang Zhou1, Dan-Yan Zhang1 1 2 Zhejiang University City College, China; Zhejiang University, China S27_01 Hot Carrier Degradation Improvement on Submicron NMOSFET in 472 Bipolar-CMOS-DMOS (BCD) Process (Invited) Jifa Hao, Zhaohui Luo, and Timwah Luk* Fairchild Semiconductor, USA S27_03 A Simple, Practical Low Frequency Noise Measurement System for Characterization and N/A Modeling (Invited) Yun Yue1, 2*, Jun Liu1, Jin-CaiWen1, Ling-Ling Sun1 1 2 Hangzhou Dianzi University, China; Intersil Corporation, USA S27_04 Multi-parameter model for HCI lifetime prediction 479 Lijuan Ma, Zhaoxing Chen, Xiao-li Ji, Feng Yan* and Yi Shi Nanjing University, China S27_05 Major Influence of Ti/TiN and TTN Metal Barrier Layer Deposition on Electro-Migration 482 Resistivity Wei Xu*, Scott Liao, Ling Jiang, Jian Yang and Chao Yu Shanghai Hua Hong NEC Electronics Co., Limited, China S28_01 Electrical evidence of atomic-size effects in the conduction filament of RRAM 485 (Invited) J. Suñé1*, S. Long2, C. Cagli3, L. Perniola3, X. Lian1, X. Cartoixà1, R. Rurali4, E. Miranda1, D.

Jiménez1, and M. Liu2 1Universitat Autonoma de Barcelona, Spain; 2Chinese Academy of Sciences, China; 3CEA-LETI, 4 France; Institut de Ciència de Materials de Barcelona, Spain S28_02 First Principles Guiding Principles for the Switching Process in Oxide ReRAM 489 (Invited) K. Shiraishi1*, M.Y. Yang1, K. Kamiya1, B. Magyari-Köpe2, Masaaki Niwa1, and Yoshio Nishi2 1 2 University of Tsukuba, Japan; Stanford University, USA S28_03 The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM 493 (Invited) Ming Liu*, Hang-Bing Lv, Qi Liu, Ying-Tao Li, Ling Li, Shi-Bing Long, Hai-Tao Sun, Xiao-Yi

Yang, MingWang, Hong-Wei Xie, Xiao-Yu Liu Chinese Academy of Sciences, China S28_04 Effects of Radiation on the Bipolar Resistive Switching Characteristics of Al/HfO2/ITO 497 Structure You-Lin Wu1*, Chiung-Yi Huang1, and Jing-Jenn Lin2 1 2 National Chi Nan University, Taiwan; National Chi Nan University, Taiwan S28_05 A Novel Self-Selection Bipolar RRAM Cell with Ultra-Low Operation Currents for 500

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Cross-Point Application Bin Gao1, Jinfeng Kang1*, Bing Chen1, Peng Huang1, Long Ma1, Feifei Zhang1, Lifeng Liu1,

Xiaoyan Liu1, Xuan Anh Tran2, and Hongyu Yu3 1Peking University, China; 2Nanyang Technological University, Singapore; 3South University of

Science and Technology of China, China S29_01 Development of New Characterisation Technique for Interface States Beyond Bandgap 503 (Invited) J. F. Zhang*, Z. Ji, M. Duan, and W. Zhang Liverpool John Moores University, UK S29_02 Atomic Layer Deposition-based Interface Engineering for High-k/Metal Gate Stacks 507 (Invited) M. Östling1, C. Henkel1, E. Dentoni Litta1, G. B. Malm1, P.-E. Hellström1, M. Naiini1, M. Olyaei1,

S. Vaziri1, O. Bethge2, E. Bertagnolli2, M.C. Lemme1 1 2 KTH – Royal Institute of Technology, Austria; Vienna University of Technology, Austria S29_03 Electrical Characterization of Ultra Thin HfO2/Al2O3/HfO2 Triple-Layer Gate Dielectrics 511 for Advanced MIS Capacitors Yang-Hua Chang1*, Kai-Yuan Fang1, Cheng-Li Lin2 1 2 National Yunlin University of Science and Technology, Taiwan; Feng Chia University, Taiwan S29_04 Characteristics of higher-κ dielectric LaLuO3 with TiN as gate stack 514 W.Yu1*, B. Zhang1, Q.T. Zhao2, D. Buca2, A. Nichau2, J. Schubert1, X.Wang1 and S. Mantl2 1Shanghai Institute of Microsystem and Information Technology, China; 2Peter Grünberg Institute

9 (PGI 9), Germany S29_05 The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with NGaAs 517 Liu Chen *, Yu-Ming Zhang, Hong-Liang Lu and Yi-Men Zhang Xidian University, China

S29_06 Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown 520 by Atomic Layer Deposition Zhang-Yi Xie1, Yang Geng1, Zhi-Yuan Ye1, Qing-Qing Sun1, Peng-Fei Wang1, Hong-Liang Lu1*,

David-Wei Zhang1 Fudan University, China S30_01 On the Modeling of Process Variations and Its Applications for Circuit Performance 523 Designs (Invited) James Ma, Wenwei Yang, Lianfeng Yang, Lifeng Wu and Zhihong Liu ProPlus Design Solutions Inc., USA S30_02 Simulation on Random Dopant Fluctuation Effect Impact on Double Gate MOSFET and N/A Corresponding 6-T SRAM Performance (Invited) Jin He1,2*, Xiufang Zhang1,2, Chenyue Ma2, Xingye Zhou2, Hongyu He1, Wanling Deng1, Mansun

Chan1 1 2 Peking University Shenzhen SOC Key Laboratory, China; Peking University, China S30_03 MOSFET low frequency noise prediction and control 531 (Invited) Kin P. Cheung, Richard G. Southwick III, Jason P. Campbell National Institute of Standards & Technology, USA S30_04 Including Process-Related Variability in Soft Error Rate Analysis of Advanced Logic 535 Design Down to 28 nm Based on a Foundry PDK M. Li1, Y.F. Li1, R. D. Schrimpf2, D. M. Fleetwood2 1 2 Platform Design Automation Inc., China; Vanderbilt University, USA S30_05 An Accurate DC and RF Modeling of Nonlinear Spiral Polysilicon Voltage Divider in High 538 Voltage MOSFET Transistor Vaclav Panko1,3*, Stanislav Banas1,3, Karel Ptacek2,3 Richard Burton4, Josef Dobes1 1Czech Technical University in Prague, Czech Republic; 2Brno University of Technology, Czech 3 4 Republic; ON Semiconductor, Czech Republic; ON Semiconductor, USA S31_01 A NoC Architecture for High-Speed Dynamic Partial Reconfiguration 541 Junrong Wang, Zhiying Zhang, Jinmei Lai* Fudan University, China S31_02 Electromagnetic Analysis and Attacks System for Cryptographic RFID 544 Zhihui Zhu, Wei Liu, Xiangyu Li*, Liji Wu, Xiangming Zhang Tsinghua University, China S31_03 A Shuffle Frog-Leaping Algorithm for Test Scheduling of 2D/3D SoC 547 Xiao Le Cui*, Xin Ming Shi, Hong Li and Chung Len Lee

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Peking University Shenzhen Graduate School, China S31_04 A Compact and Robust MCU for Automotive Body Applications 550 Haixin Wang*, Jiong Deng, Mengxi Yu, Yong Hei Institute of Microelectronics, China S31_05 Fully Digital Adaptive DC-DC Converter Based on Improved PSM in 90 nm CMOS 553 Hangbiao Li*, Ping Luo, Bo Zhang, Lei Liu, Kun Du UESTC, China S31_06 A Mixed Signal Chip Design For Implantable Retinal Device 556 Bo Wang1, Xiuhan Li2*, Jingbin Geng3, Jinan Shao4, Hanru Zhang5 Beijing jiaotong University, China S31_07 High-throughput VLSI Design and Implementation of MQ-Encoder 559 Zhi-Xiong Di1*, Jiang-Yi Shi1, Yue Hao1, Kai Liu2, Yun-Song Li2, Zhe-Fei Zhao1, Pei-Jun Ma1 1 2 Xidian University, China; Xidian University, China S31_08 Fast Object Detection Architecture Based on an Auxiliary Module and Implementation on a N/A FPGA M. Ali Mirzaei1*, Julien Dubois2 1 2 Imperial College London, UK; University of Dijon, France S32_01 Recent Development of Growth and Characterization of InN, In-rich InGaN and Those 565 Nano-structures (Invited) Y. Nanishi(1,2)*, T. Yamaguchi(3), K. Wang(1), T. Araki(1) and E. Yoon(2) 1Ritsumeikan University， Japan; 2Seoul National University, Korea; 3Kogakuin University, Japan S32_02 Catastrophic Failure of Silicon Power MOS in Space 569 (Invited) K.F. Galloway Vanderbilt University, USA S32_03 Effects of oxygen plasma etching and post-annealing on Pt Schottky contact on Mg-doped 573 InZnO Yan-Ping Deng, Jia-Hong Wu and Xin-Ping Qu* Fudan University, China S32_04 High-Performance AlN/GaN MOSHEMTs with Regrown Ohmic Contacts by MOCVD 576 Tongde Huang, Xueliang Zhu, and Kei May Lau, Fellow, IEEE Hong Kong University of Science and Technology, Hong Kong S32_05 Quality Improvement of IDSS in Deep Trench Superjunction Power VDMOSFET 579 Yung-Cheng Wang*1, Zeng-Yi Fan2, Liang Yao2, Fei Wang2, Chao-Yang Zhang1, Scott Liao2, Po

Li1, Yi-Ping Huang1 1 2 Fudan University, China; Shanghai Hua Hong NEC Electronics Company, Limited, China S32_06 Investigation of Self-heating Effect in SOI-LDMOS by Device Simulation 582 Zhiyuan Lun, Gang Du*, Jieyu Qin, Yijiao Wang, Juncheng Wang, Xiaoyan Liu Peking University, China S33_01 New Routes for Advanced 3D Heterogeneous Integration on Silicon 585 (Invited) Simon Deleonibus CEA-LETI, France S33_02 RF LDMOS design based on modified CMOS process 589 Ting Yu1, Dajie Zeng2, Nan Liu2，Xuejiao Chen2，Zhizhen Yin2, Yaohui Zhang2, Fuhua Yang1* 1 2 Institute of Semiconductors, China; Suzhou Institute of Nano-Tech. and Nano-Bionics, China S33_03 Modeling of Degradation caused by Channel Hot Carrier and Negative Bias Temperature 592 Instability Effects in p-MOSFETs C. Ma1*, H. J. Mattausch1, M. Miyake1, T. Iizuka2, K. Matsuzawa2, S. Yamaguchi2, T. Hoshida2,

A. Kinoshita2, T. Arakawa2, J. He3 and M. Miura-Mattausch1 1Hiroshima University, Japan; 2Semiconductor Technology Academic Research Center, 3 Japan; PKU-HKUST Shenzhen-Hong Kong Institution, China S33_04 A Novel Recessed-channel Tunneling FET Design with Boosted Drive Current and 595 Suppressed Leakage Current Wei Wang, Song-Gan Zang, Xi Lin, Xiao-Yong Liu, Qing-Qing Sun, Peng-Fei Wang, David Wei

Zhang Fudan University, China S33_05 Investigations of Fin Vertical Nonuniformity Effects on Junctionless Multigate Transistor 598

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Haijun Lou1,2, Binghua Li1, Xinnan Lin1 , Jin He2 , Mansun Chan3 1 2 Peking University Shenzhen Graduate School,∗ China;∗∗ PKU-HKUST Shenzhen-Hongkong 3 Institution, China; Hong Kong University of Science and Technology, Hong Kong S33_06 A Novel 30 nm Self-Aligned Bottom-Gate MOSFET with Edged Source/Drain-Tie 601 Chen-Chi Tsai*, Jyi-Tsong Lin, Yi-Chuen Eng, and Po-Hsieh Lin National Sun Yat-Sen University, Taiwan S34_01 Recent Developments in WiFi System and Related Challenges in Power Amplifier Design 604 (Invited) Ping Li Skyworks Solutions, Inc., USA S34_02 A Low-Power CMOS Power Amplifier for Implanted Biomedical Ultra Wideband (UWB) 608 Applications L. Y. Wang, B. Li*, Member, Z. H. Wu, Member South China University of Technology, P.R.China S34_03 A Fully Integrated 2.5GHz-3.5GHz CMOS Power Amplifier For WIMAX Application N/A Xiao-Dong Xu1, 2, Hai-Gang Yang1,*, Member, IEEE, Tong-Qiang Gao1 1 2 Chinese Academy of Science(CAS), China; Graduate University of CAS, China S34_04 A Low-Power Low Frequency Wake-up Receiver For Tire Pressure Monitoring System 614 Xiao-FengChen, Li-Ji Wu, Xiang-Min Zhang Tsinghua University, China S34_05 A Fully Integrated 0.35μm SiGe Power Amplifier Design 617 Qiong Yan1*, Lin Hua1, Chun-Qi Shi1*, Run-Xi Zhang1, Zong-Sheng Lai1,2 1 2 East China Normal University, China; East China Normal University, China S34_06 A 100MHz PGA with DC Offset Cancellation for UWB Receiver 620 Xin Li, Xiao Le Cui*, Bo Wang* and Chung Len Lee Peking University Shenzhen Graduate School, China S34_07 A 65nm CMOS 2.4 GHz Phase Shifter based Direct Digital Synthesizer 623 T. Finateu1, F. Badets2, Y. Deval3, JB Begueret3, D.Belot4 1University of Bordeaux, France; 2 CEA-LETI, France; 3University of Bordeaux, 4 France; STMicroelectronics, France S35_01 Planar and 3D Ge FETs 626 (Invited) C. W. Liu1,2,*, Hung-Chih Chang1, Cheng-Ming Lin1, and Yen-Ting Chen1 1 2 National Taiwan University, Taiwan; National Nano Device Labs, Taiwan S35_02 Early Assessment of Emerging Technologies for VLSI Logic Circuits from Experimental N/A Measurements (Invited) Felice Crupi1*, Paolo Magnone2, Massimo Alioto3, 4, Jacopo Franco5, 6, G. Groeseneken5, 6 1Università della Calabria, Italy; 2Università di Bologna, Italy; 3Università di Siena, 4 5 6 Italy; University of California, USA; imec, Belgium; Katholieke Universiteit Leuven, Belgium S35_03 Comprehensive study of interface passivation in Ge-MOSFETs -Control the interfacial 634 layer for high performance devices- Sheng Kai Wang1*, Bai-Qing Xue1, Bing Sun1, Hui-Li Liang2, Zeng-Xia Mei2, Wei Zhao1,

Xiao-Long Du2 and Hong-Gang Liu1 1 Institute of Microelectronics of Chinese Academy of Sciences, China; 2 Institute of Physics,

Chinese Academy of Sciences, China S36_01 Searching for the Optimal Materials for Phase Change Random Access Memories 637 (Invited) Ming-Hsiu Lee1*, Simone Raoux2, Huai-Yu Cheng1, Hsiang-Lan Lung1, and Chung Lam2 1 2 Macronix International Co., Ltd., Taiwan; IBM T. J. Watson Research Center, USA S36_01_05 Magnetic Domain-Wall Racetrack Memory for high density and fast data Storage 641 (Invited) W.S. Zhao1, 2*, Y. Zhang1,2, H-P Trinh1,2, J-O Klein1, 2, C. Chappert1, 2, R. Mantovan3, A.

Lamperti3, R.P. Cowburn4, T. Trypiniotis4, M. Klaui5, J. Heinen5, B. Ocker6, D.Ravelosona1, 2 1.Univ Paris-Sud, France; 2.UMR 8622, France; 3.Laboratorio MDM IMM CNR, Italy; 4.Univ Cambridge, England; 5.Johannes Gutenberg Univ Mainz, Germany; 6.Singulus Technologies, Germany S36_02 Fabrication of Silicon Highly-rich SiOx(x<0.75) and Its Novel Resistive Switching Behaviors 645 Yue-Fei Wang, Xin-Ye Qian, Kun-Ji Chen*, Zhong-Hui Fang, Wei Li, Jun Xu Nanjing University, People’s Republic of China S36_03 Size Analysis of Multilevel RRAM Array and Optimization of Device and Circuit 648 Characteristics Ye-Xin Deng, Peng Huang, Bing Chen, Xiao-Lin Yang, Bin Gao, Li-Feng Liu, Jin-Feng Kang,

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*Xiao-Yan Liu Peking University, China S36_04 Thermal Impact on the Resistance Switching Properties in Tantalum Oxide Based RRAM 651 Jun Mao, Yimao Cai*, Shenghu Tan, Yue Pan, Yaokai Zhang, Ru Huang* Peking University, China S37_01 Variability in Scaled MOSFETs: Measurements, Analysis, and Suppression 654 (Invited) Toshiro Hiramoto, Anil Kumar, Tomoko Mizutani, and Takuya Saraya University of Tokyo, Japan S37_02 Experimental Observation on the Random Dopant Fluctuation of Small Scale Trigate 658 CMOS Devices (Invited) Steve S. Chung National Chiao Tung University University, Taiwan S37_03 Experimental Study on the Variation of NBTI Degradation in Nano-scaled 661 High-k/Metal-gate PFETs Changze Liu1, Pengpeng Ren1, Runsheng Wang1*, Ru Huang1*, Jianping Wang2, Jingang Wu2,

Yangyuan Wang1 1Peking University, China; 2Semiconductor Manufacturing International Corporation (SMIC),

China S37_04 Simulation Study of Junctionless Vertical MOSFETs for Analog Applications 664 Shu-Huan Syu, Jyi-Tsong Lin, Yi-Chuen Eng, Shih-Wen Hsu, Kuan-Yu Chen, and You-Ren Lu National Sun Yat-Sen University, Taiwan S38_01 The Short-Channel Threshold Voltage Model for Junctionless Surrounding-Gate MOSFETs 667 (Invited) T. K. Chiang*, D.H. Chang National University of Kaoshiung, Taiwan S38_02 Modeling of the Bias Temperature Instability Under Dynamic Stress and Recovery 671 Conditions (Invited) T. Grasser1*, B. Kaczer2, H. Reisinger3, P.-J. Wagner1, and M. Toledano-Luque2 1 2 3 TU Wien, Austria; imec, Belgium; Infineon, Germany S38_03 Numerical Simulation of DB-NBTI Degradation Caused by a Sheet of Interface Charge 675 Si-Wen Huang, Wei He, Xiao-Jin Zhao, Jian-Min Cao* Shenzhen University, China S38_04 A Compact Model for the STI y-Stress Effect on Deep Submicron PDSOI MOSFETs 678 Jianhui Bu1*, Member, IEEE, Jinshun Bi1, Xianjun Ma1, Jiajun Luo1, Zhengsheng Han1, Haogang

Cai2 1Institute of Microelectronics of Chinese Academy of Sciences, China; 2Columbia University,

USA S38_05 Modeling and Separate Extraction of Bias-Dependent and Bias-Independent S/D 681 Resistances in MOSFETs Zebang Guo1*, Zuochang Ye1, Xiaojian Li1, Yan Wang1 Tsinghua University, China S38_06 Investigations on the Correlation between Line-edge-roughness (LER) and 684 Line-width-roughness (LWR) in Nanoscale CMOS Technology Xiaobo Jiang1, Meng Li1, Runsheng Wang1*, Jiang Chen2 and Ru Huang1* 1,2 Peking University, China S39_01 Exploration of A Reconfigurable 2D Mesh Network-on-Chip Architecture and A Topology 687 Reconfiguration Algorithm Zi-Xu Wu*, Jin-Xiang Wang, Ji-Yuan Zhang, Xiao-Yu Wang, Fang-Fa Fu Harbin Institute of Technology, China S39_02 A Novel Reconfiguration Strategy for 2D Mesh-based NoC Faulty Core Tolerance 690 Ji-Yuan Zhang1*, Fang-Fa Fu1*, Zi-Xu Wu1, Chun-Guang Yang2, Jin-Xiang Wang1 1 Harbin Institute of Technology, China; 2Patent Examination Cooperation Center of The Patent

Office, China S39_03 A Robust Film-Mode Detection Approach for Digital TV SoC Design 693 Qiubo Chen*, Hongbin Sun, Jie Yang, and Nanning Zheng Xi’an Jiaotong University, China S39_04 A Transport Stream Decoder Subsystem Design with a Dedicated Processor 696 Jian-hui SUN, Jin-hui WANG

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Beijing University of Technology, China S39_05 H.264 Decoder on A16-Core Processor with Shared-Memory and Massage-Passing 699 Communications Zheng Yu, Jiajie Zhang, Ruijin Xiao, Zhiyi Yu*, Xiaoyang Zeng Fudan University, China S40_01 Super Junction LDMOS Technologies for Power Integrated Circuits 702 (Invited) Ming Qiao1, Wen-Lian Wang2, Zhao-Ji Li1, Bo Zhang1* 1 University of Electronic Science and Technology of China, China; 2 North University of China,

China S40_02 Modeling of Power Devices for Enabling Smart Energy Consumption 706 (Invited) Mitiko Miura-Mattausch*, Takahiro Iizuka, Masataka Miyake, Hideyuki Kikuchihara, Hans

Juergen Mattausch Hiroshima University, Japan S40_03 The Super Junction MOS-Controlled Thyristor (SJ-MCT) with low power loss for 710 high-power switching applications Wanjun Chen, Jinhan Zhang, Bo Zhang, Huaping Jiang, Zhaoji Li University of Electronic Science and Technology of China, China S40_04 Study of Reliability in Super junction Power VDMOSFET 713 Zeng-Yi Fan*, Zheng-Yu Chu, Jing Luo, Gang Cao and Scott Liao Shanghai Hua Hong NEC Electronics Company, China S40_05 A Novel Latch-up Free SCR-LDMOS for Power-Rail ESD Clamp in Half-bridge Driver IC 716 Si-Yang Liu, Wei-Feng Sun*, Hong-Wei Pan, Hao Wang, Qin-Song Qian Southeast University, China S40_06 A 300 V Thin Layer SOI nLDMOS Based on RESURF and MFP 719 Zhuo Wang1, Wan Xu1, Tao Chen1, Xin Zhou1, Yuanyuan Zhao1, Zhengcai Chen2, Miao Zhou2,

Ming Qiao1,2, Zhiqiang Xiao2, Bo Zhang1 1 University of Electronic Science and Technology of China, China; 2China Electronics

Technology Group Corporation, China S41_01 Challenges and limits for very low energy computation 722 (Invited) Francis Balestra Grenoble INP-Minatec / Sinano Institute, France

S41_02 Si Nanowire Tunnel FETs with Epitaxial NiSi2Source/Drain and Dopant Segregation 726 (Invited) L. Knoll, Q.T. Zhao*, S. Richter, S. Trellenkamp, A. Schäfer, K. K. Bourdelle1 and S. Mantl 1 Peter Grünberg Institute, Germany; SOITEC, France S41_03 Effective Radius Models of Nanoscale Elliptical Surrounding-Gate MOSFETs 730 Ping Xiang, Guangxi Hu*, Guanghui Mei, Ran Liu, Lingli Wang, and Tingao Tang Fudan University, China S41_04 Performance Investigation on the Reconfigurable Si Nanowire Schottky Barrier Transistors 733 Juncheng Wang, Gang Du*, Zhiyuan Lun, Kangliang Wei, Lang Zeng, Xiaoyan Liu Peking University, China S41_05 Strain Impacts on Electron Mobility in Silicon Nanowires 736 Jieyu Qin1,2, Jingjie Zhang1,2, Gang Du2, Xing Zhang2, Xiaoyan Liu2, * 1 2 Peking University, China; Peking University, China S41_06 Self-diffuse Nanostructures on Silicon Surfaces through Rapid Annealing at High 739 Temperatures Gang Wang, Yi Zhao, Yi Shi* Nanjing University, China. S42_01 Compact Double-balanced Star Mixers with Novel Dual 180° Hybrids 742 (Invited) Yu-Ann Lai1, Chun-Nien Chen1, Shih-Han Hung1, and Yeong-Her Wang1, * 1 National Cheng-Kung University, Tainan, S42_03 A High Efficiency Energy Transmission Circuit for 13.56MHz Contactless Financial IC 746 Card Beibei Wang*, Liji Wu, Xiangming Zhang Tsinghua University, China S42_04 A 4-6GHz Low-Voltage CMOS Integer-M Frequency Divider Applied in Wireless Sensor 749 Networks Lu Yu, Xiangning Fan, Bin Li

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Southeast University, China S42_05 An Integrated Multi-Channel Optical Sensor Receiver with Considerations of 752 Channel-Isolation for Digital Output Huang Xiaozong1,2*, Huang Wengang1, Liu Lintao1, Shi Jiangang1 and Zhong Yingjun1 1 2 Analog IC Design Center, SISC, China; UESTC, China S42_06 Low cost VLSI design of the LDPC decoder in Advanced Broadcasting System for Satellite 755 Jianing Su1*, Zhenghao Lu2 1 2 Chinese Academy of Sciences, China; Soochow University, China S42_07 Efficient Combined-Demapping Scheme for Modified Dual-Carrier Modulation 758 Yuan-Kun Xue1, Xiao-long Wang1, Bing Jing1, Fan Ye1*, Junyan Ren1 1 Fudan University, China S43_01 Energy-band Engineering and Characterization Improvements by Fluorine Incorporation 761 on Gd2O3 Nanocrystal Memory (Invited) Chao-Sung Lai1*, Chih-Ting Lin1, Jer-Chyi Wang1 and Chu-Fa Chan2 1 2 Chang Gung University, Taiwan; MFC Sealing Technology Co., LTD., Taiwan S43_02 Efficient and Reliable Schottky Barrier Silicon Nanowire Charge-Trapping Flash Memory 765 (Invited) Chenhsin Lien1*, Chun-Hsing Shih2, We Chang1, Yan-Xiang Luo1,2, Ruei-Kai Shia2, and Wen-Fa

Wu3 1 National Tsing Hua University, Taiwan; 2 National Chi Nan University, Taiwan; 3National Nano

Device Laboratories, Taiwan S43_03 Flash Memory Embedded into High Performance 65nm CMOS for Automotive & N/A Smartcard Applications (Invited) Danny P Shum1 1 Infineon Technologies Taiwan Co., Ltd., Taiwan S43_04 A 3-bit multilevel cell programming method in nitride memory devices 772 Yue Xu 1,2, Chunbo Wu1, Xiaoli Ji1, and Feng Yan1* 1 2 Nanjing University, China; Nanjing University of Posts and Telecommunications, China

S43_05 Performance improvement for Metal/Al2O3/HfO2/SiO2/Si structure nonvolatile flash 775 memory by fluorine plasma treatment Chen-jie Wang, Zong-liang Huo, Ming Liu* Chinese Academy of Science, China S44_01 Studying the effects of doping minor transition metal elements in Al-Cu-Fe-Mn 778 quasicrystals on the structure and phase change of quasicrystals (Invited) Yang Wang1,2*, Yazuki Yamamoto3 1 Heilongjiang institute of Science and Technology, China; 2 Zhejiang Sci-Tech University, 3 China; Nara Women’s University, Japan S44_02 Benchmarking Cell Performances of recent 3-D FG NAND Cell Array N/A (Invited) Tetsuo Endoh* and Moon-Sik Seo Tohoku University, Japan S44_03 A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach 785 Yuchao Jia1, Xinnan Lin1, Wei Wang1, Yiqun Wei1, Xiaole Cui1, Xing Zhang2 1 2 Peking University, China; Peking University, China S44_04 Electrostatic Discharge (ESD) and Latchup in 3-D Memory and System on Chip 788 Applications Steven H. Voldman Dr. Steven H. Voldman LLC, S. Burlington, Vermont 05403 S44_05 Analysis of Electrostatic Crosstalk in 3D Vertical NAND Charge Trapping Memory with 791 Junctionless GAA Nanowire FET Yijiao Wang, Xiaoyan Liu*, Yunxiang Yang, Jieyu Qin, Gang Du, JinfengKang Peking University, China S44_06 A 3D-Integrated SRAM based on TSV Interconnection N/A Meng Chen1, Wen-gao Lu1*, Yong-qiang Xiao1, Ting-ting Tao1, Ya-cong Zhang1, Zhong-jian

Chen1, Sheng-lin Ma1, Xin Sun1, Yun-hui Zhu1, Jing Chen1, Min Miao1,2, Yu-feng Jin1, 3 1Peking University, China; 2Beijing Information Science andTechnology University, 3 China; Peking University, China S45_01 High-Speed Microwave Thin-Film Transistors Based on Transferrable Semiconductor 797 Nanomembranes

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(Invited) Jung-Hun Seo1, Weidong Zhou2and Zhenqiang Ma1,* 1 2 University of Wisconsin-Madison, USA; University of Texas at Arlington, USA S45_02 Improved Electrical Characteristics of Zinc Oxide Thin-Film with Fluorine Passivation 801 (Invited) Zhi Ye and Man Wong* The Hong Kong University of Science and Technology, HongKong S45_03 Bias Temperature Instability: characterization, modeling and circuit aging evaluation 805 (Invited) J. Martin-Martinez*, N. Ayala, R. Rodriguez, M. Nafria and X. Aymerich. Universitat Autònoma de Barcelona (UAB), Spain.

S45_04 Fabrication and Performance of Pentacene Thin-film Transistors with SiO2/PMMA Bilayer 809 Dielectric Xurong Zhao*, Sumei Wang, Keke Ma Shandong University, China S45_05 Performance Improvement of Reactive Magnetron Sputtering ZnO-TFT after Annealing in 812 N2 Ambient Hui-Kun Yao, Lei Sun*, You-Feng Geng, Yong-Qi Li, Yu-Qian Xia, Jian Cai, Wen-Tong Zhu,

and De-Dong Han Peking University, China S46_01 Identification and Analysis of Advanced Node Layout Proximity Effects and it’s Modeling N/A (Invited) Stella Huang*, Henry Gao*, Waisum Wong*, Xuejie Shi* 1 Semiconductor Manufacturing International Corporation, China S46_02 Compact Modeling for Gate-All-Around Nanowire Tunneling FETs (GAA NW-tFETs) 819 (Invited) Zhiping Yu, Ling Li, Li Zhang, and Jinyu Zhang Tsinghua University, China S46_03 Performance Investigation of SRAM Cells Based on Gate-all-around (GAA) Si Nanowire 823 Transistor for Ultra-low Voltage Applications Jiaojiao Ou, Ru Huang*, Yuchao Liu, Runsheng Wang, Yangyuan Wang Peking University, China S46_04 Predictive Calculation of Coupling Coefficient Between On-chip Small-area Multilayer 826 Inductors Xiaowei Xu, Wanghui Zou, Jinran Du, Xiaofei Chen, Xuecheng Zou* Huazhong University of Science and Technology, China S46_05 A Study of STI stress Impact on DC Performance of Nano-scale NMOS 830 Yun-Juan Yu*, Wen-Jun Li, Xia Fang Hangzhou Dianzi University, China S46_06 The Applicability of VBIC and Agilent Model on InP DHBTs 833 Jin-Can Zhang*, Yu-Ming Zhang, Hong-Liang Lu, Yi-Men Zhang and Hai-Peng Zhang Xidian University, China S47_01 Spintronic Devices: from Memory to Memristor 836 (Invited) Hai (Helen) Li1*, Zhenyu Sun1, Xiuyuan Bi1, and Bryant Wysocki2 1 2 New York University, USA; High Performance Systems Branch, USA S47_02 Circuit Design Challenges and Trends in Read Sensing Schemes for Resistive-Type 840 Emerging Nonvolatile Memory (Invited) Meng-Fan Chang1*, Ku-Feng Lin1, Ching-Hao Chuang1, Li-Yue Huang1, Tun-Fei Chien1, Shyh-Shyuan Sheu2, Keng-Li Su2, Heng-Yuan Lee2, Frederick T. Chen2, Chen-Hsin Lien1, Ping-Cheng Chen3, Lih-Yih Chiou4, Tzu-Kun Ku2, Ming-Jinn Tsai2, and Ming-Jer Kao2 1 National Tsing Hua University, Taiwan; 2 EOL, ITRI, Taiwan; 3 I-Shou University, 4 Taiwan; National Cheng-Kung University, Taiwan S47_03 The Optimization and Application of DDR Controller Based on Multi-Core System 844 Hui-Hui Zou1*, Pei-Jun Ma1, Jiang-Yi Shi1, Kang Li1, Zhi-Xiong Di1 1 Xidian University, China S47_04 A Novel NAND Flash Memory Controller Compatible with Asynchronous and Source 847 Synchronous Data Types Peng Qiang, Jian Cao*, Xing Zhang, Dun-Shan Yu PekingUniversity, China S47_05 An Innovative Sensing Architecture for Multilevel Flash Memory 850 Xiao-Min Gao, Yuan Wang*, Yan-Dong He, Gang-Gang Zhang, Xing Zhang Peking University, China

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S47_06 A 90nm 512Kb Embedded Phase-Change Memory Macro with Fast Read Access Time for 853 Digital Multimedia Broadcasting Applications Hongwei Hong1*, Chien Wang1, Ruizhe Wang1, Sam Sheng1, Zhongling Zhou1, Charlie Hwang2,

Christopher Scoville2, Don Labrecque2, Ryan Jurasek2, Van Butler2, Wolfgang Hokenmaier2 1 Being Advanced Memory Corporation Beijing, China; 2 Being Advanced Memory Corporation,

USA S48_02 High k/III-V Structures: Interfaces, Oxides Quality and Down Scaling 856 (Invited) Hai-Dang Trinh1, and Edward Yi Chang1,2,* 1 2 National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan S48_03 P-type InGaN across entire composition range 860 K. Wang1, T. Katsuki1, J. Sakaguchi1, T. Araki1, Y. Nanishi1,2 1Ritsumeikan University, Japan; 2Seoul National University, Korea; 3Lawrence Berkeley National

Laboratory, USA S48_04 Mapping of micropipes and downfalls on 4H-SiC epilayers by Candela optical surface 863 analyzer Lin Dong 1*, Guo-Sheng Sun 1,2,3, Jun Yu 3, Liu Zheng 1, Xing-Fang Liu 1, Feng Zhang 1,

Guo-Guo Yan 1, Xi-Guang Li 3 and Zhan-Guo Wang 2 1 Novel Semiconductor Material Laboratory, Chinese Academy of Sciences, China; 2 Key Laboratory of Semiconductor Material Sciences, Chinese Academy of Sciences, China; 3Tianyu Semiconductor Technology Co., Ltd, China S48_05 Humidity Sensing Characteristics of Tin Oxide Thin Film Gas Sensors Varying with the 866 Operating Voltage Chen Lin1, Jun He1, Senlin Jiang1, Xiaodi Liu2, Danqi Zhao1, Dacheng Zhang1* 1 Peking University, China; 2 New Display Technology Section, BOE Technology Group Co.,

Ltd., China S48_06 AlGaN/GaN HEMTs with Thermal Oxidation Treatment for Microwave Power 869 Applications Di Meng, Shenghou Liu, Shuxun Lin*, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu Peking University, China S49_01 A Modified ESD Clamp Circuit for 90-nm CMOS Process 872 (Invited) Hong-Xia Liu1*, Zhao-Nian Yang1, Yi Luo 2, Chen Liu 2 1 2 Xidian University, China; Xi’an Semipower Electronic Technology Co., China S49_02 ESD and Latchup Considerations for Analog and Power Applications 876 (Invited) Steven H. Voldman Dr. Steven H. Voldman LLC, S. Burlington, Vermont 05403 S49_03 Segmented SCR for High Voltage ESD Protection 880 (Invited) Zhiwei Liu1,2*, Jin He1,2, Juin J. Liou3,4, Jizhi Liu4, Meng Miao5, Shurong Dong5 1 Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, China; 2Peking University, China; 3 University of Central Florida, U.S.; 4 University of Electronic Science and Technology of China, China; 5Zhejiang University, China S49_04 Within ESD Bus Resistance - A New Scaling Issue 884 Steven H. Voldman Dr. Steven H. Voldman LLC, S. Burlington, Vermont 05403 S49_05 A Power Clamp Circuit Using Current Mirror for On-chip ESD Protection 887 Guangyi Lu, Yuan Wang*, Xuelin Zhang, Song Jia, Ganggang Zhang, Xing Zhang Peking University, China S50_01 Low-Cost Parallel FIR Digital Filter Structures Utilizing the Coefficient Symmetry 890 Zhenqi Liu1, Fan Ye1*, Junyan Ren1,2 1 2 Fudan University, China; Fudan University, China S50_02 JTAG-Based Bitstream Compression for FPGA Configuration 893 Rui Jia1, 2, Fei Wang2, Rui Chen1, 2, Xin-Gang Wang1, 2, Hai-Gang Yang2* 1Graduate University of Chinese Academy of Sciences, China; 2Institute of Electronics, Chinese

Academy of Sciences, China S50_03 Clock Controlled Hybrid-latch flip-flops Design 896 Jia Song*, Yan Shilin, Wu Fengfeng, Wang Yuan Peking University, China S50_04 A Compact Implementation of Masked AES S-Box 899 Wei Wei1, Xiaoxin Cui1*, Di Wu1, Rui Li1, Kaisheng Ma1, Dunshan Yu1, Xiaole Cui2

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1 2 Peking University, China; Peking University, China S50_05 The Design of FPGA’s High Speed Configurable Logic Units 902 Yong Fu, Yuan Wang, Jin-mei Lai* Fudan University, China S50_06 Digital Background Skew Calibration for Time-Interleaved Shared-Front-end SHA-less 905 Pipelined ADCs Jia-Liang Xu, Chi-Xiao Chen, Sheng-Chang Cai, Yi-Wen Zhang, Fan Ye*, Jun-Yan Ren Fudan University, China S50_07 A Prony model based signal prediction algorithm for Folding and Interpolating ADC 908 Wenlian Zhang, Chunming Zhang, Jinglei Han, Zhibiao Shao Xi'an Jiaotong University, China S50_08 A 14-bit 125MSPS Pipelined A/D Converter Without a Front-End Sample-and-Hold N/A Amplifier Lei Zhao*, Yin-Tang Yang, Zhang-Ming Zhu, Lian-Xi Liu Xidian University, China S51_01 Overview of 3D NAND Flash and Progress of Vertical Gate (VG) Architecture 914 (Invited) Hang-Ting Lue, Shih-Hung Chen, Yen-Hao Shih, Kuang-Yeu Hsieh, and Chih-Yuan Lu Macronix International Co., Ltd, Taiwan S51_02 An Advanced Embedded Flash Technology for Broad Market Applications 918 (Invited) Ko-Min Chang*, Sung-Taeg Kang, Jane Yater Freescale Semiconductor, Inc. USA S51_03 Performance and Reliability of a 65nm Flash Based FPGA 921 James Yingbo Jia, Pavan Singaraju, Fethi Dhaoui, Rich Newell, Patty Liu, Habtom Micael,

Michael Traas, Salim Sammie, Frank Hawley, John McCollum, Van den Abeelen Werner Microsemi Corporation, USA S51_04 High-Gate-Injection Tunneling Field Effect Transistor for Flash Memory Applications 924 Huiwei Wu, Shiqiang Qin, Yimao Cai*, Qianqian Huang, Ru Huang* Peking University, China S51_05 Nitrided GdTiO as Charge-Trapping Layer for Flash Memory Applications 927 Qing-Bo Tao, P. T. Lai* University of Hong Kong, Hong Kong S51_06 A new method for accurate coupling ratio measurement in a 2-T FPGA Flash cell 930 James Yingbo Jia and Fethi Dhaoui Microsemi Corporation, USA S52_01 Design Automation for Digital Microfluidic Biochips: From Fluidic-Level Toward 933 Chip-Level (Invited) Tsung-Yi Ho National Cheng Kung University, Tainan S52_02 WIPAL: Window-based Parallel Layout Decomposition in Double Patterning Lithography 937 (Invited) Hailong Yao, Yici Cai, Wei Zhao Tsinghua University, China S52_03 Characterizing, Modeling, and Simulating Soft Error Susceptibility in Cell-Based Designs in 941 Highly Scaled Technologies (Invited) Y. F. Li1, M. Li1, J. R. D. Schrimpf2, D. M. Fleetwood2 1 2 Platform Design Automation Inc., China; Vanderbilt University, USA S52_04 A Supervised ANN Method for Memory Failure signature Classification 947 Jianbo Li1*, Yu Huang2, Wu-Tung Cheng2, Chris Schuermyer2, Dong Xiang3 1 2 Tsinghua University, China; Mentor Graphics Corporation, U.S.A S53_01 A Cost-Effective Design of Non-linear Modulation Profile for Spread Spectrum Clock 950 (Invited) Chulwoo Kim*, Sewook Hwang, Minyoung Song Korea University, Korea S53_03 A Direct Digital Frequency Synthesizer Based on Optimized Two Segment Sixth-order 954 Polynomial Approximation Xiao-Jin Li*, Jun-Feng Tang, Gang Zhang and Zong-Sheng Lai East China Normal University, China S53_05 An Initial Study on the Frequency Dependent Failure Mode of the Crystal Oscillator under 957

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Radio Frequency Interference Hanyu Zheng, Zixin Wang, Tao Su* Sun Yat-sen University, China S54_01 A 25-28Gbps Clock and Data Recovery System with Embedded Equalization in 65-nm 960 CMOS (Invited) Li Sun1, Alex Pan2, Keh Chung Wang3, and C. Patrick Yue1, 2 1University of California, U.S.A; 2Hong Kong University of Science and Technology, Hong 3 Kong; Hong Kong Applied Science and Technology Research Institute Co. Ltd., Hong Kong S54_02 An11.7-17.2GHz Digitally-Controlled Oscillator in 65nm CMOS for High-Band UWB 964 Applications Deyuan Lin, Ni Xu, Woogeun Rhee, and Zhihua Wang Tsinghua University, China S54_03 A Digital Delta-Sigma Modulator with Hybrid 2nd-Order Shaped Dithering for N/A Fractional-N Frequency Synthesizers Hua Ma*, Jinbao Lan, Yan Zhang Harbin Institute of Technology, China S54_04 A Fast-Lock PLL with Over-tuning Control 970 Chao He, Tadeusz Kwasniewski Carleton University, Canada S54_05 A Low-jitter Low-area PLL with Process-independent Bandwidth 973 Jing Li1, Ning Ning1*, Yong Hu1, Kejun Wu1 1 University of Electronic Science and Technology of China, China S54_06 A Low Power PLL Quadrature Frequency Synthesizer for Zigbee Applications 976 Xiaodong Liu, Wenfeng Lou, Haiyong Wang, and Nanjian Wu Chinese Academy of Sciences, China S55_02 An Low-Power 128Kb SRAM with 0.2um FDSOI and Its TID Radiation Response 979 Zhao Kai1*, Li Ning1, Qiao Ning1, Gao Jiantou1, Yang Bo1, Yu Fang1,2, Liu Zhongli1,2 1 2 Chinese Academy of Sciences, China; State Key Laboratories of Transducer Technology, China S55_03 A Novel Method for Accurate Measurement and Decoupling of SRAM Standby Leakage 981 Qing Dong1, Yanan Ma1, Hao Chen1, Hui Li1, Yu Jiang1, Ningxi Liu1, Wenxiang Jian1, Xiaoyong

Xue1, Lele Chen2, Jianping Wang2, Jeonggi Kim2, Shaofeng Yu2, Jingang Wu2, Yinyin Lin1* 1Fudan University, China; 2Technology Development Center, Semiconductor Manufacturing

International Corp., China S55_04 Impact of Bulk/SOI 10nm FinFETs on 3T1D-DRAM cell performance 984 Esteve Amat1*, Carmen G. Almudever1, Nivard Aymerich1, Ramon Canal2 and Antonio Rubio1 1 2 Universitat Politècnica de Catalunya, Spain; Universitat Politècnica de Catalunya, Spain S56_01 A Novel Triple RESURF LDMOS with Partial N+ Buried Layer 987 Fan Xiang*, Zhuo Wang, Heng-Juan Wen, Xin Zhou, Ming Qiao, Bo Zhang 1 University of Electronic Science and Technology of China, China S56_02 On State Output Characteristics and Transconductance Analysis of High Voltage (600V) 990 SJ-VDMOS Long Zhang1*, Huilin Yu1, Yifan Wu1, Zhuo Yang1 and Jing Zhu1 1 Southeast University, China. S56_03 230V SOI PLDMOS with Gate Field Platefor PDP Scan IC 993 Yong Huang1,2, Ming Qiao1, Zhen Sun2, Tao Liang1,2, Bo Zhang1 1University of Electronic Science and Technology of China, China; 2 R&D center of Sichuan

chang hong electric co., ltd, China S56_04 High Voltage Low Side and High Side Power Devices Based on VLD Technique 996 Mou-fu Kong, and Xing-bi Chen University of Electronic Science and Technology of China, China S56_05 Heavy-Ion-Induced Permanent Damage in Ultra-deep Submicron Fully Depleted SOI 999 Devices Fei Tan, Xia An*, Liangxi Huang, Xing Zhang, and Ru Huang* Peking University, China S56_06 Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI 1002 pMOSFETs Liang-Xi Huang, Xia An*, Fei Tan, Wei-Kang Wu and Ru Huang*

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Peking University, China S58_01 A 90-µW 16 Bit 20 KHz-BW Feedforward Double-sampled Sigma-Delta Modulator in 0.18 1005 CMOS Long Xu1,2, Fei Liu1,*, Hai-gang Yang1 1 2 Chinese Academy of Science (CAS), China; Graduate University of CAS, China S58_02 An Optimization Algorithm for Timing-error Estimation in Time-interleaved ADCs 1008 Jun-Shan Wang, Su-Juan Liu*, Pei-Pei Qi Beijing University of Technology, China S58_04 Power Optimization in a 16-bit 200 MSPS Pipeline ADC 1011 Ting Li*, Lu Liu, Yan Wang, Yong Zhang and Xu Wang Science and Technology on Analog Integrated Circuit Lab, China S58_05 Selective Parallel CRC Computation Schemes for Rapid IO 1014 Wu Fengfeng, Jia Song*, Xu Heqing, Wang Yuan, Zhang Dacheng Peking University, China S58_06 A Novel Delay Manager based on Digital DLL used to adjust the delay time of FPGA’s IO 1017 Cell PengXiang Wang, JinMei Lai Fudan University, China S58_07 Commands Scheduling Optimized Flash Controller for High Bandwidth SSD Application 1020 Yu Liu, Lixin Cheng, Xuguang Wang* CAS, China S58_08 A Low Power and Wide Frequency Range CMOS Signal Detector for High Speed Data 1023 Links Zhongyuan Hou1, Fan Yang 1, Junhua Liu*2, Huailin Liao2and XingZhang2 1 2 Peking University, China; Peking University, China S59_01 The Development of Nanometer Solid State Storage Memory 1026 (Invited) Kun-Ji Chen*, Xin-Ye Qian, Yue-Fei Wang, Zhong-Hui Fang, Xin-Fan Huang, Zhong-Yuan Ma Nanjing University, China S59_02 Characterisation of electron traps in high-k dielectric stacks for Flash memory applications 1030 using fast pulse techniques (Invited) W. D. Zhang*, C. Robinson, X. F. Zheng and J. F. Zhang Liverpool John Moores University, UK S59_03 Multipeak Negative Differential Resistance Effects in Nanocrystalline Si Stacking MOS 1034 Structures Xin-Ye Qian, Kun-Ji Chen*, Jian Huang, Yue-Fei Wang, Zhong-Hui Fang, Jun Xu, Xin-Fan

Huang Nanjing University, China S59_04 Comparison of local programming method for multi-bit/level 90nm SONOS memory 1037 Chun-bo Wu, Xiao-li Ji*, Yue Xu, and Feng Yan Nanjing University, China S59_05 Study of the Disturb in SONOS Memory 1040 Li-Juan Liu*, Guo-Fei Shen, Gang Cao, Scott Liao Shanghai Hua Hong NEC Electronics Company, China S62_01 A Power and Area Efficient CMOS Charge-Pump Phase-Locked Loop 1043 Siliang Hua1*, Hua Yang1, Yan Liu1, Quanquan Li1, 2, Donghui Wang1 1Chinese Academy of Sciences, China; 2Graduate University of Chinese Academy of Sciences,

China S62_02 A Positive-Peak Detector with Adaptive Micro-Current Compensator for Wideband VCOs 1046 De-zhi Wang*, Ke-feng Zhang, Gong-hai Zhou, Xue-cheng Zou Huazhong University of Science and Technology, China S62_03 A K-band Low Phase Noise GaAs HBT VCO 1049 Yuan Peng, Hong-Liang Lu, Yu-Ming Zhang and Yi-Men Zhang Xidian University, China S62_04 A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator for RapidIO application 1052 Hailing Yang, Yuan Wang*, Song Jia, Ganggang Zhang, Xing Zhang Peking University, China

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S62_05 A High-resolution, High-linearity, Two-step Time-to-Digital Converter for Wideband 1055 Counter-assisted ADPLL in 0.13um CMOS Wei-wei Ji, Peng-fei Liu, Yang-yang Niu, Wei Li*, Ning Li, Jun-yan Ren Fudan University, China S62_06 A Phase Detector Design with Wide Input Range of High Frequency for GaAs HBT 1058 Ying Liu*, Yu-Ming Zhang, Hong-Liang Lu, Yi-Men Zhang, and Jin-Can Zhang Xidian University, China P1_01 Study of electron mobility on silicon with different crystalline orientations 1061 Wei Jiang, Haizhou Yin*, Yalou Zhang, Yunfei Liu, Weize Yu, Jing Xu, and Huilong Zhu Chinese Academy of Sciences, China

P1_02 Estimations of Fermi Level Pinning and dipole formation in TiN/HfO2/SiO2/Si Stacks N/A Xiaolei Wang1, Wenwu Wang1*, Jing Zhang2, Jinjuan Xiang1, Kai Han1, Xueli Ma1, Hong Yang1,

Chao Zhao1, Dapeng Chen1, and Tianchun Ye1 1 2 Chinese Academy of Sciences, China; North China University of Technology, China

P1_03 Electrical and Physical Characteristics of the High-k Ti-doped Ce2O3 (Ce2Ti2O7) 1067 Dielectrics Combined with Rapid Thermal Annealing Chyuan-Haur Kao, Chien-Jung Liao, Lien-Tai Kuo, Che-Chun Liu Chang Gung University, Taiwan P1_04 The Evolution of the HfSiOx/Si Interface along with the Increase of Forming Gas Annealing 1070 Temperature Wen Yang, Yang Geng, Run-chen Fang, Qing-Qing Sun*, Hong-liang Lu, Peng Zhou, Shi-Jin

Ding and David Wei Zhang Fudan University, China P1_05 The influence of silicide technique on the device performance for deep sub-micro 1073 pMOSFETs Yi-Ming Liao, Xiao-Li Ji*, Jian-Guang Chang, Chun-Bo WU, Feng Yan, Yi Shi Nanjing University, China P1_06 A More CMOS Process Compatible Scheme to Tune the Schottky Barrier Height of NiSi to 1076 Electrons by Means of Dopant Segregation (DS) technique Jian Deng1, Jun Luo1*, Chao Zhao1*, Junfeng Li1, Wenwu Wang1, Dapeng Chen1, Tianchun Ye1,

Hanming Wu2 1Chinese Academy of Sciences, China; 2Semiconductor Manufacturing International

Corporation(SMIC), China P1_07 Electrical properties of strained Si p-n junctions 1079 Wangran Wu1, Xiangming Xu2, Zhe Yuan1, Jiabao Sun1, Yi Zhao1*, Yi Shi1 1 2 Nanjing University, China; Shanghai Hua Hong NEC Electronics Company Limited, China P1_08 Formation of NiSiGe on Compressivly Strained SiGe Thin Layers 1082 Xiong-Xiong Du1,2, Lei Sun1*, Yi Wang1, Lars Knoll2, Gregor Mussler2, Bernd Hollaeder2,

Siegfried Mantl2, QingTai Zhao2 1 2 Peking University, P. R. China; Forschungszentrum Juelich and JARA-FIT, Germany P1_09 An Influence Factor of High Reliable Thermosonic Au Wire-bonding 1085 Bin Wang1*, Xiu-ying Mo1, Hong-wei Li1 1 Science and Technology on Electronic Test & Measurement Laboratory, P.R. China P1_10 Study of high performance TSV via for 3D integration N/A Song Liu*, Guangbao Shan, Hu Zhan Xi’an microelectronics technology research institute, china P1_11 TSV Coupling Capacitance Analysis under Shielding N/A Chun-Qiao Li, Li-Gang Hou*, Shu Bai Beijing University of Technology, China P1_12 Power Modeling and Comparison of 3D and 2D Mesh NOC Architecture with Shared N/A Memory Jie Wei, Jueping Cai*, Kai An and Ze Zhang Xidian University, China P1_13 TSV power modeling analysis according to virtual ground and doping concentration N/A Yuan Yao, Jueping Cai*, Xiaochuan He and Xiaonan Li Xidian University, China P1_14 Patterning HardMask challenges in 22nm node:using E-beam lithography technology N/A

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Ling-Kuan Meng, Xiao-Bin He, Chun-Long Li, Guang-Lu Chen Chinese Academy of Sciences, P. R. China P1_15 Gap Fill Capability of Ni PVD Based on Silicide-last Process 1103 Shu-Juan Mao1*, Jun Luo1, Jiang Yan1 Chinese Academy of Sciences, China P1_16 Design of Anti-radiation CMOS Pixel on SOI Wafer 1106 Li Tian1*, Tianle Miao2, Hui Wang2, Jun Wei1 1 2 Shanghai Institute of Technical Physics, China; Shanghai Advanced Research Institute, China P1_17 Design & Implementation of Configurable Logic Block (CLB) Using SET Based QCA 1109 Technology Abann Sunny#, Aiswariya S#, A.J Rose#, Jerrin Joseph#, Mangal Jolly#, Vinod Pangracious * #Rajagiri School of Engineering and Technology; *University of Pierre et Marie Curie (UPMC),

France P1_18 Research on CMOS inverter latch-up triggered by nMOS channel capacitance under HPM 1112 interference Hai-Long You1*, Quan Chen1, Jian-Chun Lan1, Xiao-Zhe Zhang1, Xin-Zhang Jia1 1 Xidian University, China P1_19 Performance Evaluation of a 32-nm CNT-OPAMP in Analog Circuits:Design and 1115 Comparison of Elliptical Filters Fahim Rahman#1, Ikram Ilyas*2, Niger Fatema*, Refaya Taskin Shama* #Bangladesh University of Engineering and Technology (BUET), Bangladesh; *American

International University-Bangladesh (AIUB), Bangladesh P1_20 ZnO nanowires Ultraviolet detector with high photoresponse based Ag NPs decoration 1118 Zhi-Ming Song*, Bo Lu, Bin Wang, Qian-Tao Cao, Zhen-Guo Song, Ying-Lu Hu No.41 Research Institute of China Electronics Technology Corporation, China P1_21 Fast switching and small sized SOI-LTIGBT with shorted trench anode 1121 Qiang Fu*, Bo Zhang, Zhaoji Li University of Electronic Science and Technology of China, China P1_22 Performance Improvement of Si Pocket-Tunnel FET with Steep Subthreshold Slope and 1124 High ION/IOFF Ratio Qianqian Huang, Ru Huang*, Zhan Zhan, Chunlei Wu, Yingxin Qiu, Yangyuan Wang Peking University, China P1_23 Performance Optimization by Considering Current Matching in Polymer Tandem Solar 1127 Cells Zhizhe Wang, Chunfu Zhang*, Dazheng Chen, Wei Wei, Yue Hao* Xidian University, China P1_24 An Automatic Recoverable Organic Fuse Based on Au/ PEDOT:PSS/Au structure 1130 Hao Yu1, ShaoSong Fu2, YuLong Jiang1*, GuoDong Zhu2**, BingZong Li 1, and David Wei Zhang Fudan University, China P1_25 Performance improvement of organic nonvolatile memory device with ultrathin LiF layer N/A Sumei Wang1*, Paddy K. L. Chan2, Chi Wah Leung3 1Shandong University, P. R. China; 2The University of Hong Kong, Hong Kong; 3The Hong Kong

Polytechnic University, Hong Kong P1_26 Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with 1136 ZrLaOx as gate dielectric Chuan-Yu Han1, P. T. Lai1*, C. H. Leung1, C. M. Che2 1 2 The University of Hong Kong, Hong Kong; The University of Hong Kong, Hong Kong P1_27 Differences of Conventional and Inverted Organic Solar Cells in Optical Aspect 1139 Dazheng Chen, Chunfu Zhang*, ZhiZhe Wang, Rui Gao, Yue Hao* Xidian University, China P1_28 Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition 1142 Speeds Hui-Kun Yao, Lei Sun*, You-Feng Geng, Yu-Qian Xia, Yi-Jiao Wang, Zhi-Yuan Lun, Tai-Huan

Wang, Wen-Tong Zhu, De-Dong Han Peking University, P. R. China P1_30 A GaN-Based Metal-Semiconductor-Metal Planar Inter-digitated Varactor 1145 Chun-Yan Jin1, Jin-Yan Wang1*, Min Fang1, Jin-Bao Cai1, Yang Liu1, Zhen Yang1, Bo Zhang1,

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Wen-Gang Wu1, Jin-Cheng Zhang2 1 2 Peking University, China; Xidian University, China P1_31 Simulation of Low Energy Proton Irradiation on InP/InGaAs Double Heterojunction N/A Bipolar Transistors Min Liu*, Yuming Zhang, Hongliang Lu, Yimen Zhang and Shaoqing Wang Xidian University, PR China P1_32 Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV 1151 spectroscopy Yandong He1*, Lin Han1, Ganggang Zhang1, Xing Zhang1, Congming Qi2, Wei Su2 1 2 Peking University, P. R. China; CSMC Technologies Corporation, China P1_33 A Novel Rectifier with Low Turn-on Voltage Utilizing Three Conducting Mechanisms at 1154 Different Voltage Levels Meng Zhang*, Jin Wei, Zehong Li, Weizhong Chen, Min Ren, Jinping Zhang University of Electronic Science and Technology of China, China P1_35 Study of Damage Mechanism and Process of nMOSFET due to High Power Microwave 1157 Injected From Drain Jian-Chun Lan1*, Hai -Long You1, Quan Chen1, Xin-Zhang Jia1, Xiao-Zhe Zhang1 Xidian University, China P1_36 The Characteristics of ZrO2 Charge Trapping Layers by Nitrogen Incorporation in 1160 Nonvolatile Memory Applications Chyuan-Haur Kao, Chih-Ju Lin, Hsin-Yuan Wang, Szu-Chien Chen Chang Gung University, Taiwan P1_37 A Heterogeneous Design Methodology for STT-RAM Memory System of Mobile SoC 1163 Minjie Lv1, Hongbin Sun1*, Tai Min1, Tong Zhang2 and Nanning Zheng1 1 2 Xi’an Jiaotong University, China; Rensselaer Polytechnic Institute, USA P1_38 Properties of Oxygen Vacancy in W-doped Monoclinic HfO2 Based on The First Principle 1166 Calculations Long Ma1,2, Zi-Qing Lu2, Bin Gao2, Bin Chen2, Peng Huang2, Li-Feng Liu2*, Xiao-Yan Liu2,

Jin-Feng Kang2* 1 2 Peking University Shenzhen Graduate School, China; Peking University, China P1_39 Inter-CMOS Process for Monolithic Integrated MEMS Resonator 1169 Danqi Zhao, Fang Yang, Chen Lin, Dacheng Zhang* Peking University, P. R. China P1_40 Investigation of Cooling Performance of Micro-Channel Structure Embedded in LTCC 1172 Substrate for 3D Micro-System Du-wei Hu1, Min Miao1, 2*, Sheng-lin Ma1, Ru-niu Fang1, Shi-chao Guo1, Yu-feng Jin 1 2 Peking University, China; Beijing Information Science and Technology University, China P1_42 Numerical Simulation of Polysilicon TFTs Based on Discrete Grain Boundaries 1175 Wan-Ling Deng1,2*, Jun-Kai Huang1, Jin He2, Hong-Yu He2 1 2 Jinan University, China; PKU HKUST Shenzhen Institution, China P1_43 Asynchronous Double-gate Polycrystalline Silicon Thin-film Transistors for AM-OLED 1178 Pixel Circuits Liangliang Wang, Yicheng Ren, Dedong Han*, Jian Cai, Yu Tian, and Yi Wang* Peking University, China P1_44 Fabrication and Characterization of a Block-Oxide Source/Drain-Tied Poly-Si TFT with 1181 Additional Poly-Si Body Yi-Chuen Eng*, Jyi-Tsong Lin, and Yi-Hsuan Fan National Sun Yat-Sen University, Taiwan P1_45 Analytical Drain Current Model for Organic Thin-Film Transistors N/A Hongyu He1*, Jin He1, Wanling Deng1, Mansun Chan2, Yuan Liu3,Ruohe Yao4, Bin Li4, Xueren

Zheng4 1PKU-HKUST Shenzhen-HongKong Institution, China; 2Hong Kong University of Science and Technology, Hong Kong; 3Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China; 4South China University of Technology, China P1_46 An IGZO TFT Based In-Cell Capacitance Touch Sensor 1187 Ruhai Fu, Congwei Liao, Chuanli Leng, Shengdong Zhang* Peking University, China

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P1_47 Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual- Active-Layer 1190 Shao-Juan Li1, Xin He1, De-Dong Han1, Yi Wang1, Lei Sun1 and Sheng-Dong Zhang1,2* 1 2 Peking University, China; Shenzhen Graduate School, Peking University, China P1_48 Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering 1193 Traps at Grain Boundary Tony C. Liu, James B. Kuo* and Shengdong Zhang PKU Shenzhen, Peking University, China P1_49 An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous VT Compensation 1196 Chuanli Leng, Congwei Liao, Longyan Wang, Shengdong Zhang* Peking University Shenzhen Graduate School, China P1_50 X-ray Sensor Based on Pixelated Scintillation Film on Photodiode Arrays 1199 Chao-Qun Xu，Ying Sun*，Da-Zhong Zhu，Yan Han Institute of Microelectronics and Optoelectronics Zhejiang University, China P1_51 Effects of metallic nanodiscs on solar absorption in Si nanopillar array solar cell 1202 Meng Liang, Yu-Long Jiang*, and Bing-Zong Li Department of Microelectronics, Fudan University, China P1_52 A CIGS Thin Film Solar Cell with Dual Absorber Layers 1205 Jian-Yuan Wang*, Jyi-Tsong Lin, Yu-Sheng Kuo, Ching-yao Pai, Yi-Chuen Eng National Sun Yat-Sen University, Taiwan P1_53 Morphological and optical properties of silicon nanoholes produced by Pt-nanoparticles 1208 assisted chemical etching Bao Zhu, Lian-Jie Li, Shi-Jin Ding*, Wei Zhang Fudan University, China P1_54 Improving the performance of lithium-ion battery through doping the conductive agent in 1211 porous LiFePO4 Shanshan Zhu, Shaohui Xu, Fei Wang, Lianwei Wang* China Normal University, China P1_55 A Reduced surface current LDMOS with stronger ESD robustness 1214 Lingli Jiang1*, Hang Fan, Chuan He, and Bo Zhang 1 University of Electronic Science and Technology of China, China P1_56 Latchup I/O to I/O Adjacency Issues in Peripheral I/O Design for Digital and Analog 1217 Applications Steven H. Voldman Dr. Steven H. Voldman LLC, USA P1_57 A Study of Process/Device/Layout Co-Design for Full-Chip ESD Protection in BCD 1220 Technology Rui Zhu1,2, Fei Yao2, Shijun Wang2, Albert Wang3*, Liji Wu1, Xiangmin Zhang1 and Baoyong

Chi1 1 2 3 Tsinghua University, China CitrusCom Semiconductor, China; University of California, USA P1_58 A Novel SCR Structure Integrated with Power Clamp for ESD Protection at I/O Pad 1223 Hang Fan1*, Lingli Jiang1, and Bo Zhang1 1 University of Electronic Science and Technology of China, China. P1_59 Common Centroid Differential Pair Signal Pin-to-Signal Pin Analog ESD Design 1226 Steven H. Voldman Dr. Steven H. Voldman LLC, USA P1_60 Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS N/A with P-top Layer for 5 V Operating Voltage Emita Yulia Hapsari1*, Ankit Kumar, Vasantha Kumar V. N, Gene Sheu1, Shao-Ming Yang1 Asia University, Taiwan, Republic of China P1_61 The ESD protection designed for LDMOS power amplifier N/A Jiang Yibo1, Du Huan1, Zeng Chuanbin1, Han Zhengsheng1 The Institute of Microelectronics of Chinese Academy of Sciences, China P1_62 Plasma Inducted Wafer Arcing in Back-end Process and the Impact on Reliability 1236 Po Li1,2*, Jing-Wei Peng2, Yung-Cheng Wang1，David Wei Zhang1 Fudan University, China P1_63 A New Stretched-exponential Model for NBTI Effects in pMOSFETs 1239

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Jian-Min Cao*, Wei He, Xiao-jin Zhao Shenzhen university, China P1_64 Process Optimization for Random Threshold Voltage Variation Reduction in Nanoscale 1242 MOSFET by 3D Simulation Hui Li1, Hao Chen1, Qing Dong1, Lele Chen2, Jianping Wang2, Jeonggi Kim2, Shaofeng Yu2,

Jingang Wu2, Yinyin Lin1* 1 2 Fudan University, China; Semiconductor Manufacturing International Corp., China P1_65 Power Consumption and Hotspot Analysis for FPGAs N/A Xiaochuan He, Jueping Cai*, Wenting Bi and Guowen Teng Xidian University, China P1_66 Impact of Quantum Confinement and Coulomb Blockade on the Retention of Nanocrystals 1248 based Charge Trapping Memory Ya-Hua Peng, Fei Liu, Rui Jin, Kang-Liang Wei, Gang Du, Jin-Feng Kang, Xiao-Yan Liu* Peking University, China P1_67 Rectifying behavior of Ag/MgO/SrRuO3 tunnel junction: First principles modeling of 1251 tunnel diode Hongguang Cheng*, Ning Deng Tsinghua University, P. R. China P1_68 A Simple Method to Accurately Determine the Temperature Dependence of Thermal 1254 Resistance of InP HBTs Jun Liu2*, Wei Cheng1, Lin Zhang2, Haiyan Lu1 and Chunlin Han1 1 2 Nanjing Electronic Devices Institute, China; Hangzhou Dianzi University, China P1_69 InN and GaN Terahertz Gunn Diodes with High DC-to-RF Conversion Efficiency N/A Shuang Long1*, Lin’an Yang 1 Xidian University, China P1_70 Simulation of Current Density –Voltage Characteristics of 1260 Poly[9,9-di-(2'-ethylhexyl)fluorenyl-2,7-diyl] Based Light Emitting Diode Qiushu Zhang1*, Di Li1 University of Electronic Science and Technology of China, China P1_71 Two-dimensional electron gases analysis on terahertz InAlN/GaN resonant tunneling diode N/A Hao-Ran Chen*, Lin’an Yang, shuang long, yang dai, qing chen, liang li, and Yue Hao Xidian University, China P1_72 A Novel Dynamic SIMD-chain 1266 Hui Yang*, Shan Wu, Shu-Ming Chen National University of Defense Technology, China P1_73 Low Power Optimization of Instruction Cache Based on Tag Check Reduction 1269 Quanquan Li1, 2*, Lidan Bao1, 2, Tiejun Zhang1, Chaohuan Hou1 1Chinese Academy of Sciences, China; 2Graduate University of Chinese Academy of Sciences,

China P1_74 An Adaptive Replication Mechanism Based on Victim Filter and Target Detection for Tiled 1272 Chip Multiprocessors Anwen Huang1*, Jun Gao1, Jiang Jiang2, Chaochao Feng1, Minxuan Zhang1 1School of Computer, National University of Defense Technology, China; 2Shanghai Jiao Tong

University, China P1_75 A Secondary Synchronization Signal Detection Implementation for LTE Downlink on a 1275 Multi-core Processor Platform Xueqiu Yu, Maofei He, Zhiyi Yu*, Xiaoyang Zeng Fudan University, P.R.China P1_76 A New Fourth-order Gm-C CMOS Polyphase Filter for Low-IF Receiver 1278 Shan Liu1, Bo Wang1*, Jin-Peng Shen1, Xin-an Wang1, Ru Huang2 1 2 Peking University Shenzhen Graduate School, China Peking University, China P1_77 A VGS/R Induced Reference Circuit Generating Both Temperature Independent Voltage 1281 and Current Sources Wen-rui Zhu1,2, Hai-gang Yang1,*, Tong-qiang Gao1, Xin Cheng1,2, Zhenhua Ye1, 2 1 2 Chinese Academy of Sciences (CAS), China; Graduate University of CAS, China P1_78 Interface Circuit Design and Implementation for MEMS Pressure Sensor in Tire Pressure 1284 Monitoring System

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Xiao Yu, Liji Wu, Xiangmin Zhang, Bo Li Tsinghua University, China P1_79 A 1.8V Low Noise Threshold Voltage Reference Generator with Temperature and Process 1287 Calibration Tingting Tao, Chaojie Fan, Dongpo Chen*, Jianjun Zhou Shanghai Jiao Tong University, China P1_80 A Switched-Capacitor Single-ended to Differential Stage for A/D Conversion of IRFPA 1290 ROIC Meng Chen, Wengao Lu*, Guannan Wang, Ran Fang, Yacong Zhang, Zhongjian Chen, Lijiu Ji Peking University, China P1_81 A Flexible Pulse Skip Modulation buck DC-DC converter enabling Minimum Energy Point 1293 Tracking Yikun Mo1*, Ping Luo, Member, IEEE, Shaowei Zhen University of Electronic Science & Technology of China, China P1_82 An adaptive segment output stage for PWM DC-DC converter 1296 Ming Luo1*, Ping Luo1*, Member, IEEE, Yi-Kun Mo1 University of Electronic Science and Technology of China, China P1_83 A Closed-Loop Switched-Capacitor Readout Circuit for Micromachined Capacitive 1299 Accelerometer Rui Chen1*, You Lu1, Wei Lang1, Peiyuan Wan1, Chi Zhang1, Ping Lin1, Weiguo Su2, Wei

zhang2* 1 2 Beijing University of Technology, China; Peking University, China P1_84 A Low-power Power Management Circuit for SoC in Tire Pressure Monitoring System 1302 Xu-Yang Ding, Li-Ji Wu*, Xiang-Min Zhang Tsinghua University, China P1_85 Radiation Detector Readout Circuit with Two-stage Charge Sensitive Amplifier 1305 Ya-Cong Zhang*, Xiao-Lu Chen, Wen-Gao Lu, Zhong-Jian Chen Peking University, China P1_86 Adjustable Schmitt Triggers Using Floating-Gate MOS Transistors 1308 Guo-Qiang Hang1,2*, Hong-Li Zhu1, Pei-Yi Zhao3, Xuan-Chang Zhou1 1School of Information and Electrical Engineering, Zhejiang University City College, China; 2Institute of Information and Communication Engineering, Zhejiang University, China; 3Chapman University, USA P1_87 A Power-Scalable Reconfigurable Active-RC Complex Band-pass Filter for a Multimode 1311 GNSS Receiver Zhou Chen, Baoyong Chi, Member, IEEE, Yang Xu, Nan Qi, Jun Xie, Lei Chen Tsinghua University, China P1_88 A 25-MHz Bandwidth, 37-dB Gain Range CMOS Programmable Gain Amplifier with 1314 DC-Offset Cancellation and Driver Buffer Bing-Qiao Liu1, Bao-Yong Chi2, IEEE Member 1,2 Tsinghua University, China P1_89 A 36nV/√Hz Noise PSD Chopper-Stabilized CMOS Amplifier with a New 1317 Ripple-Spur-Filter Scheme Peng Sun, Menglian Zhao*, Xiaobo Wu Zhejiang University, China P1_90 A RC Reconstruction Filter for a 16-bit Audio Delta-Sigma DAC 1320 Jin Yang, Xiaobo Wu†, Jinchen Zhao Zhejiang University, China P1_91 A low power 45-dB DR all-digital assisted AGC loop for a GNSS receiver in 0.18 um CMOS 1323 Xie Jun*, Chi Baoyong, Member, IEEE, Xu Yang, Qi Nan, Chen Lei and Chen Zhou Tsinghua University, China P1_92 An on-chip smart temperature sensor based on band gap and SAR ADC 1326 Li-Peng Wu, Meng Yu, Fu-Le Li Tsinghua University, China P1_93 A 13GHz 38mW Differential Front-End Amplifier Based on 0.18um SiGe BiCMOS For 1329 15Gb/s Optical Receiver Yu-Zhuo Kang1*, Lu-Hong Mao1, Shi -Lin Zhang1, Sheng Xie1, Xin-Dong Xiao1

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Tianjin University, China P1_94 Advances in Front-End Readout ASIC Design for PET Imaging 1332 Wu Gao , Deyuan Gao, Tingcun Wei and Yann Hu Northwestern∗ Polytechnical University, China P1_95 Analog CMOS Pulsed-Coupled Neuron Circuit with Multipath-Switching Device 1336 Wei-Hua Han*, Ying Xiong, Kai Zhao, Yan-Bo Zhang, Fu-Hua Yang Institute of Semiconductors, Chinese Academy of Sciences, P. R. China P1_96 A Phase Lead Compensation block for DC-DC Converters in PMU 1339 Jing Gong1*, Pengfei Liao1, Ping Luo1*, Member, IEEE, Shaowei Zhen1, Yu Zeng1 University of Electronic Science and Technology of China, China P1_97 A Novel Over-Current Protection for Digital Power Amplifier 1342 Yong Xu1*, Fei Zhao2, Rui Min1, Zhen Sun1, Ying Huang1 1Institute of Communication Engineering, PLA University of Science and Technology, 2 China; Institute of Command Automation, PLA University of Science and Technology, China P2_01 A Low Input Offset Voltage Input Stage with Base Current Traced Compensation 1345 Technique Huang Xiaozong1,2*, Shi Jiangang1, Liu Lintao1, Huang Wengang1 and Yan Kaihua1 1 2 Analog IC Design Center, SISC, Chongqing, China; UESTC, China P2_02 A Dual-Mode Digitally Controlled Converter for Synchronous Buck Converters Operating 1348 Over Wide Ranges of Load Currents Xiao Ma1*, Ping Luo, Member, IEEE, Xin Chen, Jian Gong, Shaowei Zhen 1 University of Electronic Science & Technology of China, China P2_03 Integrated Readout and Drive Circuits for a Microelectromechanical Gyroscope 1351 Tao Yin1, Huanming Wu1, HaigangYang1*, Qisong Wu1, Jiwei Jiao2 1Chinese Academy of Sciences, Beijing, China; 2Shanghai Institute of Microsystem and

Information Technology, CAS, Shanghai, China P2_04 An Analog Front-end Interface Circuit for Capacitive MEMS Accelerometer N/A You Lu1*, Rui Chen1, Wei Lang1, Peiyuan Wan1, Chi Zhang1, Ping Lin1, Weiguo Su2, Wei

zhang2* 1 2 Beijing University of Technology, China; Peking University, China P2_05 Embedded Current Amplifier Compensation for Large-Capacitive-Load Low-power 1357 Two-stage Amplifier Pengfei Liao*, Ping Luo, Bo Zhang, Zhaoji Li 1 University of Electronic Science and Technology of China, China P2_06 A Design of Readout Circuit for 384×288 Uncooled Microbolometer Infrared Focal Plane 1360 Array San-Lin Liu, Ya-Cong Zhang*, Xiang-Yun Meng, Wen-Gao Lu, Zhong-Jian Chen Peking University, China P2_07 A Switched-Capacitor Programmable-Gain Amplifier for High-Definition Video Analog 1363 Front-Ends Hong Zhang, Xue Li, Yongliang Chen, Jun Cheng* Xi'an JiaoTong University, China P2_08 A Differential Voltage Reference Generator for Pipelined ADCs 1366 Hong Zhang1, Xunwei Weng1, Yongliang Chen1, Xue Li1, Jun Cheng1*, and Ruzhang Li2 1Xi’an Jiaotong University, China; 2Science and Technology on Analog Integrated Circuit

Laboratory, China P2_09 A High Gain, Power Efficient Two-Stage Amplifier with Recycling Telescopic Input Stage 1369 Xinyue Yuan, Yu Wang, Yilei Li Fudan University, China P2_11 A High Accuracy Temperature Sensor and Temperature Compensation Algorithm 1372 Embedded In TPMS Jianguang Chen 1*, Zhu Zhu2, Lejing Wang2 , Yueguo Hao1, Yuhua Cheng2, Fellow IEEE 1 2 Peking University, China; Peking University, China P2_13 Design of An Ultralow-power CMOS Relaxation Oscillator for Piezoresistive Pressure 1375 Sensor Si-Bo Huang*, Jian-Guang Chen, Feng Yang, Yu-Hua Cheng, Fellow IEEE Shanghai Research Institute of Microelectronics, Peking University, China

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P2_14 An Improved Driving Circuit Scheme Applied in Extreme Low-Current Design on 1378 OLED-on-Silicon Microdisplay Zhao Bohua, Huang Ran, Du Huan, Luo Jiajun, Han Zhengshen* Institute of Microelectronics, Chinese Academy of Science, China P2_15 The design of the duty-cycle calibration circuitry for LVDS data transmission N/A Heng-Shou Hsu Guan-Yu Lu FENG-CHIA UNIVERSITY TAICHUNG, TAIWAN P2_16 High Slew Rate Rail-to-rail Class AB OTA with Low Consumption N/A Hui-Sen He*, Xin-Quan Lai, Cong Liu, Qiang Ye, and Chen Liu Xidian University, China P2_17 A 5th Order Butterworth Gm-C Low Pass Filter Design Based on the Enhanced gm/ID 1387 Methodology Qiao Zhang, Long Kang, Yuhua Cheng Shanghai Research Institute of Microelectronics, Peking University, China P2_18 An Improved X-Filling Strategy Based on the Multilayer Data Copy Scheme for Test Data 1390 and Power Reduction for SoC Qing Zhao, Xiao Le Cui* and Chung Len Lee Peking University Shenzhen Graduate School, China P2_19 A Self-Routing Omega Network N/A Yu-kun Song, Jing He, Gao-ming Du, Duo-li Zhang HeFei University of Technology, China P2_20 Wearable Wireless System with Embedded Real-time Fall Detection Logic for Elderly 1397 Assisted Living Applications Wenxu Bao, Yun Chen*, Xiaoyang Zeng Fudan University, China P2_21 Pipeline-based Scheduling for Heterogeneous Multi-core Systems 1400 Derong Liu, Ming’e Jing*, Yuwen Wang, Zhiyi Yu, Xiaoyang Zeng, Dian Zhou Fudan University, China P2_22 Evaluation of Buffer Organizations for Network-on-Chip 1403 Ming’e Jing, Pengshuai Ren, Weichao Zhou, Zhiyi Yu, Xiaoyang Zeng Fudan University, China P2_23 13 GHz Programmable Frequency Divider in 65 nm CMOS 1406 Jian Kang, Peng Qin, Xiaoyong Li, Tingting Mo* Shanghai Jiao Tong University, China P2_24 40GHz, 12% Tuning-Range , Fully Differential Low Phase-Noise LC VCO 1409 Lei Chen*, Siyang Han, Lixue Kuang, and Baoyong Chi, IEEE, Member Tsinghua University, China P2_25 A 1.5 mW 26.2–32.2 GHz Divide-by-4 Injection-Locked Frequency Divider in 130 nm 1412 CMOS Process Ya-Nan Sun, Wei Li, Chang-Ming Chen Fudan University, China P2_26 A 24-GHz Fully Integrated Phase-Locked Loop for 60-GHz Beamforming 1415 Chunyuan Zhou, Lei Zhang, Member, IEEE, Dongxu Yang, Yan Wang, Zhiping Yu, Fellow,

IEEE, and He Qian Tsinghua University, China P2_27 A Stable Multi-mode Fractional-N Frequency Synthesizer using Charge Pump Current 1419 Calibration Yan Feng, Jiangtao Xu*, Guican Chen Xi’an Jiaotong University, China P2_28 A Dynamic Power Programmable 10-Bit 20-MS/s Pipeline ADC for ISM Band Wireless 1422 Communication Tao Sun12*, Ning Wang2, Qi Zhang2, Dunshan Yuan2, Hui Wang2 1.Shanghai Jiao Tong University, China; 2.Shanghai Advanced Research Institute, Chinese

Academy of Science, China P2_29 A 3.65 mW 5 bit 2GS/s Flash ADC with Built-In Reference Voltage in 65nm CMOS Process 1425 Jiale Yang, Yong Chen*, He Qian, Yan Wang, Ruifeng Yue Tsinghua University, China

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P2_30 A 72dB-SNDR Rail-to-Rail Successive Approximation ADC 1428 LIU Yan*, XUE Zhiyuan, LI Quanquan, HUA Siliang, WANG Donghui Institute of Acoustics, Chinese Academy of Sciences, China P2_31 A novel Approach to Calibrate Open-loop Amplifier Nonlinearities through Piecewise linear 1431 Interpolation Gong Yuehong 1*, Luo Min2, Yu Mingyan2, Ma Jianguo3, Mao Ze2 1Harbin Institute of Technology, China; 2Harbin Institute of Technology in Weihai, 3 China; Tianjin University, china P2_32 A Novel Comparator-assisted Switching Strategy used in Successive Approximation 1434 Register ADC Yan-jia Ke1, Xiao-bo Wu2, Meng-lian Zhao3* 1 Zhejiang University, China P2_33 An Improved Frame Synchronization Method Based on Correlation Window Division 1437 Xiaoxin Cu1*, Bin Sun Peking University, China P2_34 Design of Ternary Adiabatic Domino Multiplier 1440 Peng-Jun Wang*, Qian-Kun Yang, Xue-Song Zheng Ningbo University, China P2_35 BRAM-based Asynchronous FIFO in FPGA with Optimized Cycle Latency 1443 Xinrui Zhang, Jian Wang*, Yuan Wang, Dan Chen, Jinmei Lai Fudan University, China P2_36 Research on Circuit Level Countermeasures for Differential Power Analysis Attacks 1446 Di Wu1, Xiaoxin Cui1*, Wei Wei1, Rui Li1, Dunshan Yu1, Xiaole Cui2 1 2 Peking University, China; Peking University Shenzhen Graduate School, China P2_37 A Wide-Range and High-Precision Real-Time Calibration for Dynamic Comparator 1449 Tao Lin, Mingshuo Wang, Weiru Gu, Fan Ye, Jun Xu*, Junyan Ren Fudan University, China P2_38 A ΣΔ Modulator for Low Power Energy Meter Application 1452 Wei Lang*, Peiyuan Wan and Pingfen Lin Beijing University of Technology, China P2_39 A High PVT Tolerance TDC with Symmetrical Vernier Delay Ring 1455 Biao Zhou1*, Yajuan He1, Ping Luo1, Member, IEEE 1 University of Electronic Science and Technology of China, China P2_40 Binary Tree Structure Random Dynamic Element Matching Technique in Current-Steering 1458 DACs Guangliang Guo, Yuan Wang*, Wei Su, Song Jia, Ganggang Zhang, Xing Zhang Peking University, China P2_41 Increasing the ADC Precision with Oversampling in a Flash ADC 1461 Abdulrahman Abumurad1, Kyusun Choi2 12 Pennsylvania State University, University Park, USA P2_42 Radix-Based Digital Calibration Method for Pipelined ADCs wit Signal-Dependent 1465 Dithering Keke Zhu*, Alex Lee Shanghai Jiao Tong University, China P2_43 A PVT Insensitive BCT Circuit with Replica Calibration for High Speed Charge-Domain 1468 Pipelined ADCs Shuang Zhu1, Hong Zhang1*, Xue Li1, Dong Li1, Zhenhai Chen2 , and Jun Cheng1 1 2 Xi’an Jiaotong University, China; China Electronic Technology Group Corporation, China P2_44 A 27mW 10-bit 125MSPS Charge Domain Pipelined ADC 1471 Zhenhai Chen1,2*, Songren Huang1,2, Hong Zhang3, Zongguang Yu1,2 ，Huicai Ji2 Xue Li3 1.Xidian University, China; 2.China Electronic Technology Group Corporation, China; 3.Xi’an

Jiaotong University, China P2_45 A Noise-Insensitive High-Resolution Digitally Controlled Ring Oscillator with 1474 Multipoint-Tuning Technique Te Han, Wei-Xin Gai*, Lu Li, Li Liu Peking University, China P2_46 A Low-Power Clock Generator Based on Digital DLL for High Speed Pipelined ADCs 1477

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Jun Cheng1, Liang Si1, Hong Zhang1*, Xunwei Weng1, Zhenhai Chen2, and Zhenjia Pu1 1 2 Xi’an Jiaotong University, China; China Electronic Technology Group Corporation, China P2_47 Novel Asymmetric 8T SRAM Cell with Dynamic Power 1480 Yi-Nan Mo, Guo-Qiang Hang*, Dan-Yan Zhang Zhejiang University City College, China P2_48 A New 6-Transistor SRAM Cell for Low Power Cache Design 1483 Yuan-Yuan Wang1, Zi-Ou Wang2, Li-Jun Zhang 1 2 Soochow University, China; Soochow University, China P2_49 A logic 2T gain cell eDRAM with enhanced retention and fast write scheme 1486 Yu-Feng Xie*, Kuan Cheng, Yin-Yin Lin* Fudan University, China P2_50 Low Power Embedded EEPROM Design for MCU in Battery-less Tire Pressure Monitoring 1489 System Chao-Jun Chi, Li-Ji Wu*, Xiang-Min Zhang, Li-Yang Pan Tsinghua University, China P2_51 A Digital 2.4-GHz Transmitter for ZigBee Application 1492 Li Li, Wei-Xin Gai*, Bo-Han Wu, Ya-Ming Zhang, Te Han Peking University, China P2_52 A monolithic optical receiver chip for free space visible light communication system† 1495 BeiJu Huang *, HongDa Chen Institute of Semiconductors, Chinese Academy of Sciences, China P2_53 A Dynamic Framed Slotted ALOHA Anti-collision Algorithm Based on Tag-Grouping for 1498 RFID Systems Yang Qing1, Li Jian-cheng1*, Wang Hong-yi1, Shen Rong-jun1 1 National University of Defense Technology, China P2_54 A Reconfigurable Quadrature Passive Downconverter for Multimode Multistandard 1501 Receivers in CMOS 0.18 µm Kuan Bao*, Xiangning Fan, and Zhigong Wang Southeast University China P2_55 12 GHz Monolithic Double-Balanced Down Converter in 65 nm CMOS 1504 Rui Guan, Tingting Mo*, Dongpo Chen, Xiaoyong Li Shanghai Jiao Tong University, China P2_56 Design of a LC VCO and injection locked frequency divider special for Ka-band application 1507 Zibo Zhou, Wei Li, Ning Li, Junyan Ren Fudan University, China P2_57 A 0.3~17.2GHz Frequency Divider with Capacitive Degeneration In 130nm CMOS 1510 Hanchao Zhou1, Wei Li 1*,Yangyang Niu1, Zibo Zhou1, Ning Li 1*, Junyan Ren Fudan University, China P2_58 A DC-12.8GHz Fully Differential Buffer with 0.35dB Gain Variation for Ultra-Wideband 1513 Applications Yang-Yang Niu, Wei Li Fudan University, China P2_59 A 900MHz High Linearity Low Power Down-Conversion Mixer 1516 Jun-Yu Chen, Bo Wang, Shan Liu, Jin-Peng Shen, Zheng-Kun Ruan, Yan Du, Xin-An Wang,

Xing Zhang Shenzhen Graduate School of Peking University, China P2_60 A New Design of VLFSR-based Mutual Authentication Protocol for RFID 1519 Dong-Sheng Liu, Jian Cheng, Xue-Cheng Zou, Zhen-Qiang Yong *, Zi-Long Liu Huazhong University of Science & Technology, China P2_61 A 60GHz Microstrip Antenna Array Based on PCB/Polypropylene Composite Substrate 1522 Bin Lu*, Jun Luo, Li Zhang, Yan Wang, and Ruifeng Yue Tsinghua University, China P2_62 Ultra-high Q RF CMOS Spiral Inductor with Stacked Multi layer/finger Structure N/A Xi-Ning Wang*, Jen-Hao Cheng, Ling Liu, Waisum Wong Semiconductor Manufacturing International Corporation, China P2_63 A Complementary Injection Technique for Performance Enhancing of CML dividers 1528

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Chunyuan Zhou, Lei Zhang, Member, IEEE, Zhiping Yu, Fellow, IEEE, and He Qian Tsinghua University, China P2_64 A Wide-Locking Range V-Band Injection-Locked Frequency Divider 1532 Chunyuan Zhou, Lei Zhang, Member, IEEE, Zhiping Yu, Fellow, IEEE, and He Qian Tsinghua University, China P2_65 A Multi-bit Encoder and FM0/Miller Decoder Design for UHF RFID Reader Digital 1536 Baseband Fang-Ni Zhang, Xin-An Wang*, Shan-Shan Yong, Xiao-Long Shi, Bin Liu, Zhao-Yang Guo Peking University Shenzhen Graduate School, China P2_66 A Programmable Digital Down-Converter for SDR Receivers 1539 Qian Yu, Bao-Yong Chi, IEEE Member 1,2 Tsinghua University, China P2_67 Design of High-Throughput Mixed-Radix MDF FFT Processor for IEEE 802.11.3c 1542 Jun-Feng Tang, Xiao-Jin Li*, Gang Zhang and Zong-Sheng Lai East China Normal University, China P2_68 A Wireless Sensor Network Routing Protocol for Emergent Event Monitoring N/A Hong-Yan Yang1,2，Shu-Qin Geng1 ，Wu-Chen Wu1 1.Beijing University of Technology, China; 2.the Chinese People's Armed Police Forces Academy,

China P2_69 A Multi-Reader Joint Detection Scheme for Dense RFID Networks 1548 Weijie Shen1, Xiaolin Zhou1*, Yanju Tu1 Fudan University, China P2_70 System Design on Fifth-order Close-Loop ΣΔ Accelerometer In Simulink N/A Wei Lang*, Peiyuan Wan and Pingfen Lin Beijing University of Technology, China P2_71 The Effect of LUT Size on Nanometer FPGA Architecture 1554 Xifan Tang1*, Lingli Wang1 1 Fudan University, China P2_72 DANoC: A dynamic adaptive Network on Chip A rchitecture 1558 Hao Shu 1*, Jiang-Yi Shi1 , Yue Hao1, Pei-Jun Ma1, Zhao Xu1 1 Xidian University, China P2_73 Research on High Speed Mixed-Signal SoC Verification Based on NanoSim-VCS with a 1561 4.8Gb/s SerDes Transmitter Shuai Yuan, Liji Wu, Ziqiang Wang, Xiangmin Zhang, Xuqiang Zheng Tsinghua University, China P2_74 An Efficient Methodology for Mixed-Signal High-Speed Memory Design Using 1564 Matlab/Simulink-HDL Co-Simulation Ashok Jaiswal1*, Yuan Fang2, Klaus Hofmann3 and Peter Gregorius4 1, 2, 3 Darmstadt University of Technology, Germany P2_75 Energy-aware Task Partitioning and Scheduling Algorithm for Reconfigurable Processor 1567 Rui Shi*, Shouyi Yin, Chongyong Yin, Leibo Liu, Shaojun Wei Tsinghua University, China P2_77 A Low Power MCU Design for Battery-Less TPMS SoC 1570 Peng-Fei Ma, Li-Ji Wu, Xiang-Min Zhang, Xiao-Rui Zhang Tsinghua University, China P2_78 A High Level Synthesis Method for Reconfigurable Operator Array 1573 Bin Liu, Xin-An Wang*, Shan-Shan Yong, Jing Lan*, Cheng-Hao Wu, Fang-Ni Zhang,

Xiao-Long Shi, Wei Lv Peking University Shenzhen Graduate School, China P2_79 Greedy Algorithm Based XNOR/OR Gates Decomposition 1576 Hui-Hong Zhang, Peng-Jun Wang* Ningbo University, China P2_80 Power optimization of incompletely specified fixed polarity Reed-Muller circuits 1579 Di-Sheng Wang, Peng-Jun Wang* Ningbo University, China P2_81 Dataflow Driven Hardware Description Method and Its Circuit Synthesis Based on 1582

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Operators Shan-Shan Yong, Xin-An Wang*, Jing Lan, Cheng-Hao Wu, Xiao-Bo Long, Zheng Xie, Teng

Wang Peking University Shenzhen Graduate School, China P2_82 Repack: a packing algorithm to enhance timing and routability of a circuit 1585 Zheng Huang, Zhaotong Li, Na Wang, Ping Tao, Xuegong Zhou *, Lingli Wang Fudan University, China P2_83 Modular Multiplier by Folding Barrett Modular Reduction 1590 Tao Wu1*, Shu-Guo Li2**, Li-Lian Liu2+ 1 2 Tsinghua University, China; Tsinghua University, China P2_84 A Quantum Method to Test the Satisfiability of Boolean Functions 1593 Jin Wang1, Jialin Chen, Chaofan Yu, Linli Wang* 1 Fudan University, China P2_85 Multi-mode timing closure of D6000 Collective Communication Chip 1598 Jia Yang*, Hua Shen, Li-ke Liu, Ding-shan You Institute of Computing and Technology, Chinese Academy of Sciences, China P2_86 Physical design of a million-gate chip with 65nm process technology N/A Zhang. Jie, Sun. Dacheng IC Design Center, CETC, China P2_87 A Path-Matching Timing Optimization in Physical Design for DDR Port of a Global Switch 1604 Chip Ding-shan You1*, Guo-jun Yuan 1*, Hua Shen 1* 1 Institute of Computing Technology, China Academy of Sciences, China P2_88 Fast Hotspot Detection by Virtual FAB Flow N/A Liang Zhu 1*, Lin Shen1, Zhibo Ai1 1 Synopsys, China P2_89 Critical Area-Constrained Redundant Via Insertion 1610 Yong-Bang SU1,2, Jun-Ping WANG 1, Shi-Gang LIU 1,2 Xidian University, China P2_90 Simulation and Analysis of Low-Energy Electron Beam Lithography on Topographical 1613 Substrates Peng Wu1, Zai-Fa Zhou2*, Jiang-Yong Pan1, Qi Gan1 and Wen-Qin Xu1 1 2 Southeast University, China Southeast University, China P2_91 Application of Pre-corrected FFT in Statistical Power Analysis Considering Spatial 1616 Correlations Xiao-Lin Yang1,2, Zi-Qing Lu2, Gang Du2, Xing Zhang2, Xiao-Yan Liu2* 2 1Peking University Shenzhen Graduate School, China; Peking University, China P2_92 A Complete Process Design Kit Verification Flow and Platform for 28nm Technology and 1619 Beyond *Yanfeng Li1, Miao Li1, Waisum Wong2 1Platform Design Automation Inc, China; 2Semiconductor Manufacturing International Corp,

China P2_93 Combined Linear-Nonlinear Control for Improved Dynamic Response of DC-DC Buck 1623 Converter Xin Chen1*, Ping Luo1*, Member, IEEE, Shao-Wei Zhen1 1 University of Electronic Science and Technology of China, China P2_94 Research on Power Model of Multi-Mode FinFET Standard Cell 1626 Xiaoxin Cui*, Kaisheng Ma, Kai Liao, Nan Liao, Di Wu, Wei Wei, Rui Li Peking University, China P2_95 Effect of film thickness on properties of Al-doped ZnO film as transparent conducting 1629 electrodes in OLEDs Yua n-dong Li1, De-miao Wang*, Hao Jin, Jing-ping Lu, Jian Zhou 1 Zhejiang University, China P2_96 An Improved Narrow-Band Interference Suppression Method for HINOC System 1632 Xiaoxin Cui*, Yang Liu, Wei Wei, Kai Liao, Dunshan Yu Peking University, China P2_97 A Temperature Compensated Clock Oscillator N/A

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Wei Wu*, Wei Lang, Rui Chen, You Lu, Yunfeng Chang, Chi Zhang, Peiyuan Wan*, Ping Lin Beijing University of Technology, China P2_98 A 5.6~8.2GHz QVCO with a New DCCA Circuit 1638 Ning Zhu, Wei Li, Ning Li, Junyan Ren Fudan University, China P2_99 A 6MHz CMOS Reference Clock Generator with Temperature and Supply Voltage 1641 Compensation Hyeonseok Hwang*, Chan-Hui Jeong, Chankeun Kwon, Hoonki Kim, Youngmok Jeong, Bumsoo

Lee, and Soo-Won Kim Korea University, Seoul, Korea P2_100 Fast-Locking Phase-error Compensation Technique in PLL 1644 Bumsoo Lee1*, Chan-Hui Jung1, Se-Chun Park2, Soo-Won Kim2 1Korea University, Anam-dong, Seongbuk-gu, Seoul, South Korea; 2Korea University,

Anam-dong, Seongbuk-gu, Seoul, South Korea P2_101 A SHA-less 10-bit 80-MS/s CMOS Pipelined ADC 1647 Young-Mok Jung1*, Jin Zhe 1, Chan-Keun Kwon2, Hoon-Ki Kim1, Soo-Won Kim1 1Korea University, Anam-dong, Seongbuk-gu, Seoul, South Korea; 2Korea University,

Anam-dong, Seongbuk-gu, Seoul, South Korea Author Index

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