MERCURY ARC RECTIFIER PRACTICE a Typical Steel Tank Rectifier
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A High Efficiency 0.13Μm CMOS Full Wave Active Rectifier With
Advances in Science, Technology and Engineering Systems Journal ASTES Journal Vol. 2, No. 3, 1019-1025 (2017) ISSN: 2415-6698 www.astesj.com Special issue on Recent Advances in Engineering Systems A High Efficiency 0.13µm CMOS Full Wave Active Rectifier with Comparators for Implanted Medical Devices Joao˜ Ricardo de Castilho Louzada, Leonardo Breseghello Zoccal, Robson Luiz Moreno, Tales Cleber Pimenta Federal University of Itajuba,´ IEST, Itajuba´ - MG, Brazil ARTICLEINFO ABSTRACT Article history: This paper presents a full wave active rectifier for biomedical implanted Received: 30 April, 2017 devices using a new comparator in order to reduce the rectifier Accepted: 29 June, 2017 transistors reverse current. The rectifier was designed in 0.13µm Online: 11 July, 2017 CMOS process and it can deliver 1.2Vdc for a minimum signal of Keywords: 1.3Vac. It achieves a power conversion e ciency of 92% at the Active Rectifier ffi 13.56MHz Scientific and Medical (ISM) band. CMOS Comparator Medical Devices 1 Introduction but it is unusable for circuits running on power sup- plies of 1V or less. Alternatively to the conventional This paper is an extension of work originally pre- diodes, Schottky diodes can be used, but the manu- sented in The 15th International Symposium on In- facturing process of low forward drop voltage can be tegrated Circuits, Sigapure, 2016 [1]. It presents some more expensive than the traditional processes [4] be- details not described in the original paper. This paper cause they might not be present in some regular pro- also brings new results obtained after a new calibra- cesses and require extra fabrication steps [5]. -
Below 535 a Historical Review of Continuous Wave Radio Frequency
Below 535 Edited by Frank Lotito, K3DZ 1428 O'Block Rd., Pittsburgh ,PA 15239 Please include SASE for reply A Historical Review of Continuous Wave Radio Frequency Power Generators Overview The many disadvantages of the spark transmitters that were the original means of radio communication eventually led to the development of better methods for generating a radio frequency signal. Herculean-type arc transmitter ably presented in Henry Bradford's recent award winning article on the Marconi transatlantic site in Nova Scotia (1) was one historically significant means of developing large amounts of r.f. power in the long-wave spectrum. This article will briefly review some others. These were the Poulsen Arc transmitter, Alexanderson and Goldschmidt HF generators, and the static frequency changers.1 Hopefully, one or more readers will be enticed to contribute detailed articles on each of these devices. Introduction nbsp; At the start of the twentieth century, wireless communication lost its curiosity status and became a practical means of spanning large distances. "King Spark" ruled the realm. But all too frequently, the spark signals filled the airwaves with a muddle of almost unintelligible overlapping messages! The interference was due to a number of major factors: 1. There was little or no regulation of the airwaves or assignment of priorities. Radio services transmitted whenever they wished and in any part of the radio frequency spectrum they desired. 2. A transmitter "horse power competition" evolved. Those who could afford the more powerful transmitters built them in order to improve their chances of being heard. 3. The very wide bandwidth of the spark transmission2 resulted in lower transmitter efficiency and communications effectiveness, while splattering the r.f. -
Electrical Engineering
SCIENCE MUSEUM SOUTH KENSINGTON HANDBOOK OF THE COLLECTIONS ILLUSTRATING ELECTRICAL ENGINEERING II. RADIO COMMUNICATION By W. T. O'DEA, B.Sc., A.M.I.E.E. Part I.-History and Development Crown Copyright Reseruea LONDON PUBLISHED BY HIS MAJESTY's STATIONERY OFFICI To be purchued directly from H.M. STATIONERY OFFICI at the following addre:11ea Adutral Houae, Kinpway, London, W.C.z; no, George Street, Edinburgh:& York Street, Manchester 1 ; 1, St, Andrew'• Cretccnr, Cudi.lf So, Chichester Street, Belfa1t or through any Booueller 1934 Price 2s. 6d. net CONTENTS PAGB PREFACE 5 ELECTROMAGNETI<: WAVF13 7 DETECTORS - I I EARLY WIRELESS TELEGRAPHY EXPERIMENTS 17 THE DEVELOPMENT OF WIRELESS TELEGRAPHY - 23 THE THERMIONIC vALVE 38 FuRTHER DEVELOPMENTS IN TRANSMISSION 5 I WIRELESS TELEPHONY REcEIVERS 66 TELEVISION (and Picture Telegraphy) 77 MISCELLANEOUS DEVELOPMENTS (Microphones, Loudspeakers, Measure- ment of Wavelength) 83 REFERENCES - 92 INDEX - 93 LIST OF ILLUSTRATIONS FACING PAGE Fig. I. Brookman's Park twin broadcast transmitters -Frontispiece Fig. 2. Hughes' clockwork transmitter and detector, 1878 8 Fig. 3· Original Hertz Apparatus - Fig. 4· Original Hertz Apparatus - Fig. S· Original Hertz Apparatus - 9 Fig. 6. Oscillators and resonators, 1894- 12 Fig. 7· Lodge coherers, 1889-94 - Fig. 8. Magnetic detectors, 1897, 1902 - Fig. 9· Pedersen tikker, 1901 I3 Fig. IO. Original Fleming diode valves, 1904 - Fig. II. Audion, Lieben-Reisz relay, Pliotron - Fig. IZ. Marconi transmitter and receiver, 1896 Fig. IJ. Lodge-Muirhead and Marconi receivers 17 Fig. 14. Marconi's first tuned transmitter, 1899 Fig. IS. 11 Tune A" coil set, 1900 - 20 Fig. 16. Marconi at Signal Hill, Newfoundland, 1901 Fig. -
Hexfet® Transistor Irhn9230
Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED IRHN9230 ® HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.8Ω, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHN9230 -200V 0.8Ω -6.5A high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up Features: to 1 x 105 Rads (Si) total dose. No compensation in gate 5 drive circuitry is required. In addition these devices are also n Radiation Hardened up to 1 x 10 Rads (Si) capable of surviving transient ionization pulses as high as n Single Event Burnout (SEB) Hardened 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of n Single Event Gate Rupture (SEGR) Hardened International Rectifier P-Channel RAD HARD HEXFETs has n Gamma Dot (Flash X-Ray) Hardened demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International n Neutron Tolerant Rectifier’s patented HEXFET technology, the user can expect n Identical Pre- and Post-Electrical Test Conditions the highest quality and reliability in the industry. n Repetitive Avalanche Rating P-Channel RAD HARD HEXFET transistors also feature all Dynamic dv/dt Rating of the well-established advantages of MOSFETs, such as n voltage control,very fast switching, ease of paralleling and n Simple Drive Requirements temperature stability of the electrical parameters. -
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ...................................................................................................... -
How to Select a Capacitor for Power Supplies
CAPACITOR FUNDAMENTALS 301 HOW TO SELECT A CAPACITOR FOR POWER SUPPLIES 1 Capacitor Committee Upcoming Events PSMA Capacitor Committee Website, Old Fundamentals Webinars, Training Presentations and much more – https://www.psma.com/technical-forums/capacitor Capacitor Workshop “How to choose and define capacitor usage for various applications, wideband trends, and new technologies” The day before APEC, Saturday March 14 from 7:00AM to 6:00PM Capacitor Industry Session as part of APEC “Capacitors That Stand Up to the Mission Profiles of the Future – eMobility, Broadband” Tuesday March 17, 8:30AM to Noon in New Orleans Capacitor Roadmap Webinar – Timing TBD – Latest in Research and Technology Additional info here. Short Introduction of Today‘s Presenter Eduardo Drehmer Director of Marketing FILM Capacitors Background: • Over 20 years experience with knowledge on +1 732 319 1831 Manufacturing, Quality and Application of Electronic Components. [email protected] • Responsible for Technical Marketing for Film Capacitors www.tdk.com 2018-09-25 StM Short Introduction of Today‘s Presenter Edward Lobo was born in Acushnet, MA in 1943 and graduated from the University of Massachusetts in Amherst in 1967 with a BS in Chemistry. Ed worked for Magnetek, Aerovox and CDE where he is currently Chief Engineer for New Product Development. Ed Lobo Ed has served for over 52 years in Chief Engineer, New Product capacitor product development. He holds [email protected] 14 US patents involving capacitors. 4 ABSTRACT This presentation will guide individuals selecting components for their Electronic Power Supplies. Capacitors come in a wide variety of technologies, and each offers specific benefits that should be considered when designing a Power Supply circuit. -
Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol. -
Aluminum Electrolytic Capacitors Power Application Capabilities
VISHAY INTERTECHNOLOGY, INC. aluMinuM electrolYtic capacitors Power Application Capabilities Aluminum Electrolytic Capacitors in Power Applications POWER APPLICATIONS • Motor Drives • Solar Inverters • Traction in trains or rolling stock • Uninterruptible Power Supply (UPS) • Pulsed Power RESOURCES • For technical questions contact [email protected] • Sales Contacts: http://www.vishay.com/doc?99914 A WORLD OF SOLUTIONS CAPABILITIES 1/11 VMN-PL0453-1610 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VISHAY INTERTECHNOLOGY, INC. aluMinuM electrolYtic capacitors for Motor Drives Introduction to the Application Motor drives are used to control the speed of various motors in all kinds of systems, from the small pumps and motors in household washing machines and central heating and air-conditioning systems to the large motors found in industrial machinery. Selecting the Best Capacitor for Your Motor Drive Application Aluminum capacitors are often used as DC link capacitors in motor drives, both in 1-phase and 3-phase designs. The aluminum capacitor is used as an energy buffer to ensure stable operation of the switch mode inverter driving the motor. The aluminum capacitor also functions as a filter to prevent high-frequency components from the switch mode inverter from polluting the mains voltage. The key selection criterion for the aluminum capacitor is the required ripple current. The ripple current consists of two components, a low-frequency ripple (50 Hz to 200 Hz) from the input and a high-frequency component from the inverter, typically 8 kHz to 20 kHz. -
Introduction to Modulation
Modular Electronics Learning (ModEL) project * SPICE ckt v1 1 0 dc 12 v2 2 1 dc 15 r1 2 3 4700 r2 3 0 7100 .dc v1 12 12 1 .print dc v(2,3) .print dc i(v2) .end V = I R Introduction to Modulation c 2019-2021 by Tony R. Kuphaldt – under the terms and conditions of the Creative Commons Attribution 4.0 International Public License Last update = 10 May 2021 This is a copyrighted work, but licensed under the Creative Commons Attribution 4.0 International Public License. A copy of this license is found in the last Appendix of this document. Alternatively, you may visit http://creativecommons.org/licenses/by/4.0/ or send a letter to Creative Commons: 171 Second Street, Suite 300, San Francisco, California, 94105, USA. The terms and conditions of this license allow for free copying, distribution, and/or modification of all licensed works by the general public. ii Contents 1 Introduction 3 2 Case Tutorial 5 2.1 Example: simple diode mixer circuit ........................... 6 2.2 Example: simple diode demodulator circuit ....................... 9 2.3 Example: AD633 as a balanced mixer .......................... 11 3 Tutorial 15 3.1 Amplitude modulation ................................... 16 3.2 Frequency modulation ................................... 19 3.3 Phase modulation ..................................... 21 3.4 Pulse modulation ...................................... 22 3.5 Frequency-shifting ..................................... 23 3.6 I-Q modulators ....................................... 28 4 Historical References 33 4.1 Arc converter transmitters ................................. 34 4.2 Heterodyne radio reception ................................ 37 4.3 Trunked telephony system ................................. 45 5 Derivations and Technical References 47 5.1 Mathematics of signal mixing ............................... 48 5.2 Square-law mixing .................................... -
Lecture 9: Diodes Circuits and Bjts
Lecture 9: Diodes Circuits and BJTs Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University [email protected] Wei 1 Overview • Reading – S&S: Chapter 3.7, 4.1~3 • Supplemental Reading • Background – We will finish off diode circuits with a full-wave rectifier circuit. Then, we will begin looking at transistors with the bipolar junction transistor. We will spend some time understanding how they work based on what we know about pn junctions. One way to look at a BJT transistor is two back-to-back diodes. Wei ES154 - Lecture 9 2 Rectifier Circuits • One of the most important applications of diodes is in the design of rectifier circuits. Used to convert an AC signal into a DC voltage used by most electronics. Wei ES154 - Lecture 9 3 Full-Wave Rectifier • To utilize both halves of the input sinusoid use a center-tapped transformer… Wei ES154 - Lecture 9 4 Bridge Rectifier • Looks like a Wheatstone bridge. Does not require a center- tapped transformer. – Requires 2 additional diodes and voltage drop is double. Wei ES154 - Lecture 9 5 Peak Rectifier • To smooth out the peaks and obtain a DC voltage, add a cap across the output Wei ES154 - Lecture 9 6 Bipolar Junction Transistor • NPN BJT shown • 3 terminals: emitter, base, and collector • 2 junctions: emitter-base junction and collector-base junction • Depending on the biasing across each of the junctions, different modes of operation are obtained – cutoff, active, and saturation MODE EBJ CBJ Cutoff Revese Reverse Active Forward Reverse Saturation Forward Forward Wei -
In Electrolytic Capacitor Manufacturer That We Introduce the with the Snap - in Electrolytic Capacitor in the Application of the Rectifier Filter
1 SHANGHAI JINPEI ELECTRONICS CO., LTD 上海金沛电子有限公司 Jinpei as a professional snap - in electrolytic capacitor manufacturer that we introduce the with the snap - in electrolytic capacitor in the application of the rectifier filter In the applications of rectifier power frequency filtering, the snap - in electrolytic capacitor due to its large capacity, high pressure and has an irreplaceable position.In power frequency rectifier filter applications, as a consumer, should pay attention to the snap - in electrolytic capacitr what performance? With single-phase and three-phase rectifier circuit of aluminium electrolytic capacitor and under different ways of filtering of the output current of the rectifier and capacitor ripple current below Can see from the picture, both in unidirectional rectifier and three-phase rectifier type can be divided into input filter capacitance and inductance type input filter.The former circuit is simple, but through the filter capacitor ripple current is big;Although the latter circuit is complex, but it can greatly reduce the ripple current flows through the filter capacitor.In the power output of the rectifier is large Choose the latter as well. The choice of rated voltage Undoubtedly, the first is the snap - in electrolytic capacitor pressure.Must not be lower than rated voltage peak voltage that may occur.Such as ac 220 V input rectifier, directly under the most unfavorable circumstances possible rated voltage + 20%, or 264 V, the rectifier voltage peak will reach about 370. After the V, light as the parasitic -
MBR40H100WTG Switch-Mode Power Rectifier 100 V, 40 A
MBR40H100WTG Switch-mode Power Rectifier 100 V, 40 A Features and Benefits http://onsemi.com • Low Forward Voltage • Low Power Loss/High Efficiency SCHOTTKY BARRIER • High Surge Capacity RECTIFIER • 175°C Operating Junction Temperature 40 AMPERES • 40 A Total (20 A Per Diode Leg) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 100 VOLTS Compliant 1 Applications 2, 4 • Power Supply − Output Rectification 3 • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in 1 TO−247 • Weight: 4.3 Grams (Approximately) 2 CASE 340AL 3 • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: MARKING DIAGRAM 260°C Max. for 10 Seconds MAXIMUM RATINGS Please See the Table on the Following Page B40H100 AYWWG B40H100 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR40H100WTG TO−247 30 Units/Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2014 − Rev. 5 MBR40H100WT/D MBR40H100WTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A TC = 148°C, per Diode 20 TC = 150°C, per Device 40 Peak Repetitive Forward Current IFRM 40 A (Square Wave, 20 kHz) TC = 144°C Nonrepetitive Peak Surge Current IFSM 200 A (Surge applied at rated