Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides
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Ultra-Thin Niobium Nitride Films for Hot Electron Bolometer and Thz Applications
THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE Group for Advanced Receiver Development Department of Earth and Space Science CHALMERS UNIVERSITY OF TECHNOLOGY Gothenburg, Sweden 2016 i Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE © SASCHA KRAUSE, 2016. Thesis for the degree of Licentiate of Engineering Group for Advanced Receiver Development Department of Earth and Space Science Chalmers University of Technology SE-412 96 Gothenburg Sweden Telephone + 46 (0)31-772 1000 Cover: Upper left corner: The Atacama Path Finder Experiment representing the exploration of space in the submillimeter and THz frequency range, upper right corner: HRTEM image of ultra-thin NbN film that is grown onto a GaN buffer-layer in an epitaxial manner, lower left corner: SEM image of the employed HEB used for measuring the phonon escape time, lower right corner: Resistance versus temperature behavior of the investigated ultra-thin NbN films which were grown onto different buffer-layers and substrates. [Printed by Chalmers Repro Service] Gothenburg, 2016 ii Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE Group for Advanced Receiver Development Department of Earth and Space Science Chalmers University of Technology Gothenburg, Sweden 2016 Abstract The part of the electromagnetic spectrum between microwaves and infrared, also known as the terahertz band, is of particular interest for radio astronomy. The radiation intensity of the cold universe peaks at this frequency band, thus defining the demand on sensitive low-noise instruments in this particular frequency range. -
Development of a Nbn Deposition Process for Superconducting Quantum Sensors
1 Development of a NbN Deposition Process for Superconducting Quantum Sensors D. M. Glowacka, D. J. Goldie, S. Withington, H. Muhammad, G. Yassin , and B. K. Tan occurs with the addition of the reactive gas during sputtering, Abstract— We have carried out a detailed programme to which in turn affects stoichiometry. It is very important to explore the superconducting characteristics of reactive DC- quantify the location of the best operating point, and this magnetron sputtered NbN. The basic principle is to ignite a requires a careful study of the effects of deposition conditions. plasma using argon, and then to introduce a small additional Thakoor et al. [2] found that high-Tc NbN films were nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the deposited at the point where the total sputter pressure started host substrate. The characteristics of a sputtered film depend on to increase rapidly with increasing nitrogen flow. In this paper, a number of parameters: argon pressure, nitrogen flow rate and we outline work that we have done to create a high-yield time-evolution profile, substrate material, etc. Crucially, the highly-reproducible deposition process for high-Tc NbN. We hysteresis in the target voltage as a function of the nitrogen flow also briefly describe work on realising and measuring can be used to provide a highly effective monitor of nitrogen resonators of the kind that would be suitable for a KID array consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible operating at 3.5 K in an easy-to-use closed-cycle refrigerator. -
Novel Semiconductor-Superconductor Structure Features Versatile Gallium Nitride 8 March 2018, by Tom Fleischman
Novel semiconductor-superconductor structure features versatile gallium nitride 8 March 2018, by Tom Fleischman niobium nitride (NbN), a proven superconductor material used in quantum communications, astronomy and a host of other applications. The group's paper, "GaN/NbN Epitaxial Semiconductor/Superconductor Heterostructures," is being published online March 8 in Nature. Former postdoctoral researcher Rusen Yan and current postdoc Guru Khalsa are co-lead authors. Other key contributors were Grace Xing, the Bandgap, lattice constant, crystallinity and Richard Lundquist Sesquicentennial Professor in superconductivity in epitaxial NbNx on SiC. a, Bandgap ECE and MSE, and David Muller, the Samuel B. versus lattice constant for select nitride semiconductors as well as for SiC. b, Cross-section HAADFSTEM Eckert Professor of Engineering in the Department images in black/white (left) and false-colour (right) of of Applied and Engineering Physics. 5-nm NbNx grown on an SiC substrate with a AlN capping layer. c, Resistance versus temperature The method for combining the two materials – (normalized to the resistance at 16K), showing the molecular beam epitaxy (MBE), essentially spray superconducting phase transition of 5-nm (red) and painting of gallium and nitrogen atoms onto the 35-nm (blue) . Credit: Nature (2018). DOI: NbN in a vacuum environment – creates an 10.1038/nature25768 extremely clean interface and is key to the success of the novel structure. This advance, the group says, opens up a range of Silicon has been the semiconductor material of possibilities that can now combine the macroscopic choice for electronics pretty much since the quantum effects of superconductors with the rich transistor effect was first observed and identified electronic and photonic properties of group III- nearly 80 years ago. -
Discovery of Superconductivity in Hard Hexagonal Ε-Nbn
BNL-111904-2016-JA Discovery of Superconductivity in Hard Hexagonal ε-NbN Yongtao Zou1,2, Xintong Qi3, Cheng Zhang4, Shuailing Ma1, Wei Zhang5, Ying Li2, Ting Chen3, Xuebing Wang3, Zhiqiang Chen2, David Welch4,6, Pinwen Zhu1, Bingbing Liu1, Qiang Li4, Tian Cui1 & Baosheng Li2 1State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China. 2Mineral Physics Institute, State University of New York, Stony Brook, N.Y. 11794, United States. 3Department of Geosciences, State University of New York, Stony Brook, N.Y. 11794, United States. 4Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, N.Y. 11973, United States. 5School of Science, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China. 6Department of Materials Science and Engineering, State University of New York, Stony Brook, N.Y. 11794, United States. *Correspondence and requests for materials should be addressed to Y. Z. (E-mail: [email protected] ), Y. L . (E-mail:[email protected]) **The current ultrasonic, magnetization and electrical resistivity measurements were performed in the U. S. when Yongtao Zou was working at the State University of New York (Stony Brook). Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ~11.6 K, which is significantly higher than that for boron-doped diamond. -
Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex
Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Silvia, Jared S., and Christopher C. Cummins. “Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex.” Journal of the American Chemical Society 132.7 (2010) : 2169-2171. As Published http://dx.doi.org/10.1021/ja910445r Publisher American Chemical Society Version Author's final manuscript Citable link http://hdl.handle.net/1721.1/65162 Terms of Use Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex Jared S. Silvia and Christopher C. Cummins Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139 RECEIVED DATE (automatically inserted by publisher); E-mail: [email protected] There are several motivations for producing chemicals from Scheme 1 CO2 whenever possible, and in particular, CO is a promising target being both a versatile chemical precursor and a fuel.1 Reducing metal complexes capable of O-atom abstraction from CO2 typically lead to the formation of strong metal- oxygen bonds that represent a challenge to catalytic turnover.2 In a special case for which the binding of CO2 evidently involves insertion into a Cu–B linkage, catalytic turnover producing CO was accomplished by taking advantage of the ultimate delivery of oxygen into a stable B–O–B reservoir.3 This is to be compared with electrocatalytic methods for CO2 reduction to CO in systems that likely involve a direct interaction between CO2 and the metal center at some point in the catalytic cycle.4 Another commonly observed trend in metal-mediated CO2 reduction is disproportionation reactivity 2– leading to the formation of CO and CO3 , highlighted by the reaction of Li2[W(CO)5] with CO2 to give W(CO)6 and 5 Li2CO3. -
The Impact of Anionic Vacancies on the Mechanical Properties of Nbc and Nbn: an Ab Initio Study
The Impact of Anionic Vacancies on the Mechanical Properties of NbC and NbN: An ab initio Study P. W. Muchiria,c, K. K. Korirb,c, N. W. Makauc, G. O. Amoloa,c aMaterials Modeling Group, School of Physics and Earth Sciences, The Technical University of Kenya, P.O. Box, 52428-00200, Nairobi, Kenya. bPhysics Department, Moi University, P.O. Box, 3900-30100, Eldoret, Kenya. cComputational Material Science Group, Physics Department, University of Eldoret, P.O. Box, 1125-30100, Eldoret, Kenya. Abstract The development of super-hard materials has recently focused on systems containing heavy transition metal and light main group elements. Niobium carbides and nitrides have previously been identified as potential candidates, however, the volatility of carbon and nitrogen during synthesis make them prone to formation of anionic vacancies, which have the ability of changing the electronic structure, dynamical stability and adversely affecting the mechanical properties. Here, we present ab initio Density Functional Theory calculations that probe the occurrence of anionic vacancies as a function of concentration, thereafter, pertinent mechanical properties are investigated. Our results showed that the presence of anionic vacancies in NbC and NbN tend to deteriorate the mechanical properties and ultimately the mechanical hardness due to vacancy softening that can be attributed to defect induced covalent to metallic bond transition. Further, it was observed that anionic vacancies in NbC tend to modify its toughness, in particular, NbC in ZB becomes brittle while NbC in WZ becomes ductile in presences of C vacancies of up to 6%. On the other hand, the toughness of NbN was found to be insensitive to defect concentration of even up to 8%. -
Single-Photon Detection, Kinetic Inductance, and Non-Equilibrium Dynamics in Niobium and Niobium Nitride Superconducting Nanowires
Abstract Single-Photon Detection, Kinetic Inductance, and Non-Equilibrium Dynamics in Niobium and Niobium Nitride Superconducting Nanowires Anthony Joseph Annunziata 2010 This thesis is a study of superconducting niobium and niobium nitride nanowires used as single optical and near-infrared photon detectors. The nanowires are biased in the zero-voltage state with a current just below their critical current and at a temperature well below their critical temperature. In this state, an absorbed photon induces localized heating at the point of absorption. This suppresses the critical current in that location, creating a resistive region in the nanowire. The resistive region can grow under Joule heating and can self-reset to the zero-voltage state without the dc bias current being reduced. This study is twofold. First, niobium is investigated as an alternate detector material to niobium nitride. This study compares the performance niobium nanowire detectors of several geometries and fabricated in two different ways to the performance of niobium nitride nanowire detectors. Niobium detectors are found to have longer reset times and are more difficult to bias in a regime where they self-reset to the zero voltage state after detecting a photon. This makes niobium a less suitable material than niobium nitride for these detectors. In the second part of this study, the reset dynamics of these detectors are studied. Thermal relaxation is studied using a combination of experiments and numerical simulations. It is found that the thermal relaxation time for a niobium nanowire depends significantly on the amount of energy dissipated into the hotspot during the detection event. -
Tantalum Nitride Nanotube Photoanodes: Establishing a Beneficial Back-Contact by Lift-Off and Transfer to Titanium Nitride Layer
Tantalum nitride nanotube photoanodes: establishing a beneficial back-contact by lift-off and transfer to titanium nitride layer Lei Wang, a Anca Mazare, a Imgon Hwang, a and Patrik Schmuki a,b,* a Department of Materials Science and Engineering, WW4-LKO, University of Erlangen- Nuremburg, Martensstrasse 7, D-91058 Erlangen, Germany. b Department of Chemistry, King Abdulaziz University, Jeddah, Saudi Arabia * E-mail: [email protected] Abstract In this work we introduce the use of TiN/Ti2 N layers as a back contact for lifted-off membranes of anodic Ta3N5 nanotube layers. In photoelectrochemical H2 generation experiments under simulated AM 1.5G light, shift of the onset potential for anodic photocurrents to lower potentials is observed, as well as a higher magnitude of the photocurrents compared to conventional Ta3N5 nanotubes (~0.5 V RHE ). We ascribe this beneficial effect to the improved conductive properties of the TiNx -based back contact layer that enables a facilitated electron-transport for tantalum-nitride based materials to the conductive substrate. Key words: tantalum nitride; nanotube membranes; titanium nitride; water splitting Link to the published article: http://dx.doi.org/10.1016/j.elecom.2016.08.012 1. Introduction Ta3N5 is considered to be one of the most important semiconductor materials for photoelectrochemical (PEC) water splitting. It has a visible-light active band gap of ~2.1 eV that embraces the H2O H2/O2 reduction-oxidation potentials, and thus may yield a 15.9% theoretical maximum solar-to-hydrogen (STH) conversion efficiency [1-9]. Extensive research has focused on nanostructuring the Ta3N5 photoelectrodes, in the form of nanoparticles, nanorods, or nanotubes [10-15]. -
Structural and Electrical Properties of Ultrathin Niobium Nitride Films Grown
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Royal Holloway - Pure Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition S. Linzen,1 M. Ziegler,1 O. V. Astafiev,2, 3, 4, 5 M. Schmelz,1 U. Hubner,¨ 1 M. Diegel,1 E. Il’ichev,1 and H.-G. Meyer1 1Leibniz Institute of Photonic Technology, P.O. Box 100239, D-07702 Jena, Germany 2Physics Department, Royal Holloway, University of London, Egham, Surrey TW20 0EX, United Kingdom 3National Physical Laboratory, Teddington, TW11 0LW, United Kindom 4Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia 5Russian Quantum Center, 100 Novaya Street, Skolkovo, Moscow region 143025, Russia. (Dated: September 28, 2016) We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films were minimised and a polycrystalline film structure consisting of niobium nitride and niobium grains were formed. For this composition a critical temperature of 13.7 K and critical current densities of 7x106 A/cm2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic "-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor-insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. -
Solid State Metathesis Preparations of Hard Refractory Ceramics
S o u p S t a t e M e t a t h e s is P reparations OF H a r d R e f r a c t o r y C e r a m i c s A thesis presented by: Artur Marek Nartowski BSc in partial fulfilment for the award of Ph. D. U n iv e r s it y C o l l e g e Lo n d o n D e p t , o f C h e m is t r y ProQuest Number: 10014877 All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. uest. ProQuest 10014877 Published by ProQuest LLC(2016). Copyright of the Dissertation is held by the Author. All rights reserved. This work is protected against unauthorized copying under Title 17, United States Code. Microform Edition © ProQuest LLC. ProQuest LLC 789 East Eisenhower Parkway P.O. Box 1346 Ann Arbor, Ml 48106-1346 Acknowledgements This work was supported by EPSRC and was completed under very helpfiil and encouraging supervision of Dr. I. P. Parkin. Grateful acknowledgement is due to members of staff, especially Dr. C. Carmalt, Prof. A. J. Craven, Dr. M. MacKenzie and the departmental microanalyst. I am also indebted to my fellow students, in particular, L. -
Integrated Superconducting Detectors on Semiconductors for Quantum Optics Applications
Integrated superconducting detectors on semiconductors for quantum optics applications M. Kaniber,1 F. Flassig,1 G. Reithmaier,1 R. Gross,2,3 and J. J. Finley1,3 1 Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany 2 Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften und Physik-Department, Technische Universität München, 85748 Garching, Germany 3 Nanosystems Initiative Munich, Schellingstraße 4, 85748 München, Germany Abstract: Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high- quality, superconducting Niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realise highly efficient and ultrafast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ∼ 4 �� thin films and single photon timing resolutions < 72 ��. We discuss the integration of such detectors into quantum dot loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth < 15 ��� displaced by 1 �� from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported. Main text: Semiconductors are ubiquitous in modern opto-electronics and quantum photonic devices and are also expected to play a major role in photonic quantum technologies [1]. -
Atomic Layer Deposition of Niobium Nitride Thin Film with Nbcl and NH
The performance materials business of Merck KGaA, Darmstadt, Germany operates as EMD Performance Materials in the U.S. and Canada. Atomic layer deposition of niobium nitride thin film with NbCl5 and NH3 Moo-Sung Kim1, Se-Won Lee1, and Sergei Ivanov2 Atomic: Layer Deposition of Niobium Nitride Motivation Key Properties Metal Nitride Work Function, • Thermodynamically stable toward Cu eV • High melting point TiN 5.05 – 5.15 • Chemically inert VN 5.05 – 5.15 • Good mechanical properties, such as hardness and toughness • Low resistivity, good adhesion NbN 4.95 • Lower work function compared to TiN Potential Applications HfN 4.70 – 4.80 • Barrier layer • Metal gate TaN 4.70 – 4.80 • Electrode material Project goals R. Fujii et al, Vacuum, 2006, 80, p. 832-835 • Study ALD of NbN on various substrates • Confirm good process conformality 2 ALD Conference 2020 | June 2020 Atomic Layer Deposition of Niobium Nitride ALD precursor and ALD tool • Niobium pentachloride, NbCl5, was evaluated as a potential precursor for the deposition of NbNx films • Deposition on Si, SiO2, Al2O3 and TiN substrates was investigated • The impact of chamber pressure and wafer temperature on ALD process was studied Tool Configuration NbNx Film Characterization Chamber Pressure 1-30 Torr Thickness and Resistivity: XRF, 4 point probe 80oC NbCl 5 Film Composition: RBS, XPS, SIMS Wafer T 300-500oC Film properties: XRR and XRD The deposition tool is CN-1 Surface morphology and single 200mm wafer with 300 sccm Conformality: SEM & TEM showerhead 3 ALD Conference 2020 | June 2020