Precursor Chemistry of Tantalum and Niobium Nitride for MOCVD and ALD Applications

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Precursor Chemistry of Tantalum and Niobium Nitride for MOCVD and ALD Applications Precursor Chemistry of Tantalum and Niobium Nitride for MOCVD and ALD Applications Dissertation Arne Baunemann Precursor Chemistry of Tantalum and Niobium Nitride for MOCVD and ALD Applications Dissertation zur Erlangung der Doktorwürde der Fakultät für Chemie der Ruhr-Universität Bochum vorgelegt von Diplom-Chemiker Arne Baunemann Referenten Prof. Dr. Roland A. Fischer Prof. Dr. William S. Sheldrick II Die vorliegende Arbeit entstand in der Zeit von Oktober 2003 bis Oktober 2006 am Lehrstuhl für Anorganische Chemie II der Ruhr-Universität Bochum Meinem Mentor und Betreuer, Professor Dr. Roland A. Fischer möchte ich an dieser Stelle meinen außerordentlichen Dank zuteil werden lassen. Ohne seine inspirierende Vorlesung im ersten Semester hätte ich nicht den Weg in die Chemie gefunden. Während meines gesamten Studiums hat er mir jederzeit mit Rat und Tat zur Seite gestanden und mich in allen Plänen - ohne Einschränkungen - unterstützt. Diese Erfahrungen haben mich zutiefst für mein weiteres Leben geprägt. III “Contradictions do not exist. Whenever you think that you are facing a contradiction, check your premises. You will find that one of them is wrong.” (Ayn Rand in “Atlas Shrugged”, 1957) Meinen Eltern und Carmen IV Acknowledgements Danksagung Juniorprof. Dr. Anjana Devi Anjana und Harish danke ich außerordentlich für die & Dr. Harish Parala Unterstützung in Form von konstruktiver Kritik in vielen Bereichen und der Unterstützung bei XRD und TG/DTA Messungen. Dr. Christian Gemel Christian danke ich für den wertvollen chemischen Input, den er mir in den letzten Jahren gegeben hat. Marie-Kathrin Schröter Nana danke ich für die Unterstützung und den gemeinsamen Spaß in den letzten acht Jahren, die wir fast tagein-tagaus miteinander verbracht haben. Awesome. Martin Lemberger Martin hat es mit nahezu unermüdlichem Eifer geschafft, mir einen gewissen Einblick in das Mysterium der Elektrotechnik zu geben. Vielen Dank für die Kooperation im Rahmen des DFG. Stephan Hermes & Andreas Stephan und Andreas danke ich für die kreative Kempter Unterstützung, wenn es darum ging, neue Wege zu gehen und ganz besonders für die Showvorlesung. Denise Zacher Danke für die Motivation, Hilfe bei Syntheseproblemen und ein immer offenes Ohr. Sabine Masukowitz Vielen Dank für die Unterstützung in allen organisatorischen Fragen und bei dem Umgang mit dem RUB’schen Büroapparat. Stephan Spöllmann Stephan danke ich für die vielen Experimente, die er mit Lucy alias Aixtron 200 FE durchgeführt hat. Manuela Winter Manuela danke ich für die Lösung von vielen, vielen Kristallstrukturen und die Berücksichtung meiner wirren Wünsche für die Bezeichnung der Atome. Kai Richter Kai danke ich für die tatkräftige Unterstützung bei der Synthese von Schwefel und anderen nützlichen Dingen. Dr. Rolf Neuser Herrn Neuser danke ich für die SEM- und EDX Messungen. Prof. Dr. Martin Feigel und Ihnen danke ich für die Unterstützung bei dem Lösen von Priv. Doz. Dr. Iris Müller schwierigen NMR-Spektren und Kristallstrukturen. Prof. Dr. Lauri Niinistö & Vielen Dank für die nette und herzliche Aufnahme an der Jaako Niinistö Helsinki University of Technology. V Acknowledgements Prof. Dr. Jin-Hio Boo & Vielen Dank für die sehr gastfreundliche Aufnahme an der Jin-Ho Park Sungkyunkwan University. H.C. Starck GmbH Ich danke Herrn Dr. Stephan Kirchmeyer, Herrn Dr. Knud Reuter und Herrn Gerd Passing für die materielle und wissenschaftliche Unterstützung währende der Promotion. Desweiteren möchte ich mich bei meinem gesamten Lehrstuhl für die schöne Zeit in der Gruppe bedanken. Dazu gehören Saeed Amirjalayer, Dr. Raghunandan Bhakta, Beatrice Buchin, Thomas Cadenbach, Mirza Cokoja, Rolf Deibert, Daniel Esken, Lina Freitag, Dr. Eliza Gemel, Malte Hellwig, Ursula Herrmann, Todor Hikov, Heike Kampschulte, Andreas Kempter, Dr. Jayaprakash Khanderi, Dr. Emmanuel Lamouroux, Dr. Eva Maile, Mikhail Meilikhov, Andrian Milanov, Maike Müller, Daniel Rische, Dr. Rochus Schmid, Felicitas Schröder, Dr. Jelena Sekulic, Stephan Spöllmann, Tobias Thiede, Dr. Maxim Tafipolsky, Tim Wilmsen, Manuela Winter, Dr. Wenhua Zhang und Xiaoning Zhang. VI Table of contents Table of contents Chapter 1 Introduction and motivation 1 1.1 Motivation and goals 2 1.2 Phases of group(V) nitrides and their properties 4 1.3 Applications of tantalum and niobium nitrides 7 1.4 Techniques for deposition of thin films via gasphase 11 1.4.1 Physical Vapor Deposition (PVD) 11 1.4.2 Metal Organic Chemical Vapor Deposition (MOCVD) 12 1.4.3 Atomic Layer Deposition (ALD) 16 Chapter 2 State of the art in research and motivation 19 2.1 Previously reported MOCVD experiments for group(V) nitrides 19 2.1.1 MOCVD of tantalum nitride 20 2.1.2 Conclusions of past reports about the MOCVD of tantalum nitride 24 2.1.3 MOCVD of niobium nitride 28 2.2 Previously reported ALD experiments for group(V) nitrides 29 2.2.1 ALD of tantalum nitride 29 2.2.2 ALD of niobium nitride 32 Chapter 3 Starting compounds and their synthesis 34 3.1 Synthesis of mixed amido / imido compounds of tantalum and niobium 34 3.1.1 Single crystal X-ray analysis of S8, S3 and the hydrolyzed form of S3 (S3’) 36 3.1.2 Thermal properties of the compounds S4-S9 39 3.2 Ligand synthesis 41 3.2.1 Synthesis of N-trimethylsilyl-N’,N’-bisdimethylhydrazine (Htdmh) 42 Chapter 4 Hydrazido based precursors of tantalum 44 4.1 Hydrazine derivatives as useful ligands for new MOCVD and ALD precursors 44 4.2 Synthesis of amido / imido / hydrazido complexes A1-A3 by transamination reactions 46 4.2.1 Synthetic route, purity and properties of the compounds A1-A3 46 4.2.2 Spectroscopic analysis of the compounds A1-A3 48 4.2.3 Single crystal X-ray analysis of A1 49 4.2.4 Thermal analysis of A1-A3 in respect to MOCVD / ALD 50 4.3 Destructive transamination reactions of A1-A3 with N,N-dimethyl-hydrazine (Hdmh) 52 4.3.1 Single crystal X-ray analysis of a hydrolyzed tantalum-dmh complex 54 4.4 Reactions of TaCl5 and [TaCl3(N-t-Bu)py2] with lithiated hydrazine derivatives 57 Chapter 5 Guanidinato based precursors of tantalum and niobium 60 5.1 Types of guanidinate ligands in complexes and their synthesis 60 5.2 Potential of guanidinate(-1) ligands for precursor chemistry 64 5.3 Synthesis of amido / imido / guanidinato compounds of tantalum B1-B8 65 5.3.1 Synthetic route, purity and properties of the compounds B1-B8 65 5.3.2 Spectroscopic analysis of the compounds B1-B8 68 5.3.3 Single crystal X-ray analysis of B1-B5 and B7 74 VII Table of contents 5.4 Synthesis of amido / imido / guanidinato compounds of niobium C1-C4 83 5.4.1 Synthetic route, purity and properties of the compounds C1-C4 83 5.4.2 Spectroscopic analysis of the compounds C1-C4 84 5.4.3 Single crystal X-ray analysis of C1 and C2 85 5.5 Thermal analysis of B1-B8 and C1-C4 in respect to MOCVD / ALD 87 5.6 Investigations of the thermal decomposition of B1-B3 91 Chapter 6 MOCVD of tantalum nitride 93 6.1 Presentation of the MOCVD reactors utilized in this work 94 6.1.1 Bubbler design – Enhancement of precursor evaporation 98 6.2 Deposition experiments with simple amido / imido tantalum precursors 99 6.2.1 Depositions with [Ta(NEtMe)3(N-t-Bu)] (S5) in the selfbuilt horizontal reactor 100 6.2.2 Depositions with [Ta(NEt2)3(N-t-Bu)] (S6) in the Aixtron 200 RF reactor 104 6.2.3 Depositions with [Ta(NEt2)3(N-t-Bu)] (S6) in the 150 mm wafer reactor 112 6.2.4 Depositions with [Ta(NMeEt)3(N-t-Bu)] (S5) in the 150 mm wafer reactor 113 6.2.5 Conclusions for the use of mixed amido / imido tantalum precursors 114 6.3 Deposition experiments with mixed amido / imido / hydrazido tantalum precursors 115 6.3.1 Depositions in the selfbuilt horizontal cold wall reactor 115 6.3.2 Depositions with [Ta(NMeEt)2(tdmh)(N-t-Bu)] (A2) in the 150 mm wafer reactor 118 6.3.3 Conclusions for the use of mixed amido / imido / hydrazido tantalum precursors 119 6.4 Deposition experiments with mixed amido / imido / guanidinato tantalum precursors 121 6.4.1 Depositions with B2 in the selfbuilt horizontal reactor 121 6.4.2 Depositions with B2 in the LI – MOCVD reactor Aixtron 200 FE 125 6.4.3 Conclusions for the use of mixed amido / imido / guanidinato tantalum precursors 127 6.5 Electrical characterization of TaN films for MOS-gate structures at the FIIS (Erlangen) 128 Chapter 7 MOCVD of niobium nitride 130 7.1 Depositions with [Ta(NMe2)3(N-t-Bu)] (S8) in the selfbuilt horizontal reactor 130 7.2 Depositions with C1 in the selfbuilt horizontal reactor 133 Chapter 8 ALD of metal (oxo) nitride materials 136 8.1 Presentation of the ASM F120 ALD reactor 136 8.2 ALD experiments in a well adjusted F-120 reactor (Finland) 138 8.3 Installation of the F120 reactor in Bochum and first results 140 8.3.1 Depositions with S5 in reactor setup I 140 8.3.2 Depositions of Al2O3, TaON and NbON in reactor setup II 142 8.4 Conclusions for the ALD of tantalum and niobium nitride materials 145 Chapter 9 Summary and outlook 147 Chapter 10 Experimental 154 10.1 Analytical characterization of the precursors 154 10.2 Thin films analysis and instruments 155 10.3 Details to MOCVD and ALD experiments 161 10.3.1 Wafer treatment 161 VIII Table of contents 10.3.2 Handling of the selfbuilt reactor 161 10.3.3 Handling of the ASM F-120 Reactor 162 10.4 General comments on synthesis and characterization 162 10.5 Synthesis of the starting compounds S1-S11 164 10.5.1 Synthesis of the chloro-containing intermediate compounds S1 - S3 164 10.5.2 Synthesis of the mixed amido / imido complexes S4 - S8 165 10.5.3 Synthesis of N-Trimethylsilyl-N’,N’-dimethylhydrazine 167 10.6 Synthesis involving hydrazines (A1-A5 and further
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