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Program ISGD-6B Time 18 July Wed 19 July Thu 20 July Fr 21 July Sat 10:00 - Section 3 Section 6 Section 8 10:20 10:20 - Graphene Growth II Graphene Graphene 10:40 Devices I Devices II 10:40 - 11:00 11:00 - Registration 11:20 11:20 - 11:40 11:40 - Coffee break Coffee break 12:00 12:00 - Section 4 Section 7 12:20 12:20 - Graphene 2D Materials Coffee break 12:40 Characterization 12:40 - Opening Closing 13:00 13:00 - 13:20 13:20- Lunch 13:40 13:40- Lunch Lunch 14:00 14:00 - Lunch 14:20 14:20 - 14:40 14:40 - Section 1 Section 5 15:00 15:00 - Theory Graphene technology Industrial 15:20 Section 15:20 - 15:40 15:40 - 16:00 16:00 - 16:20 16:20 - Coffee break Coffee break 16:30- 16:40 18:00 16:40 - Section 2 Poster section 17:00 17:00 - Graphene Excursion along 17:20 Growth I rivers and canals 17:20 - 17:40 17:40 - 18:00 18:00 - Welcome party 20:00 Program International Symposium on Graphene Devices (ISGD-6) 18-21 July, St. Petersburg, Russia. 18 July Wednesday 11:00 – 12:40 Registration 12:40 - 13:40 Opening ( Chair Prof. R.Yakimova) 12:40 – 13:00 ITMO University – First non-classical University 13:00 -13:20 100 years of Ioffe Institute ( Prof. S.V.Lebedev, Acting Director of Ioffe Institute ) 13:20 -13:40 ISGD-6 in St.Petersburg ( Prof. A.A.Lebedev ) 13:40 -14:40 LUNCH 14:40 – 16:20 Section 1 “Theory” (Chair Prof. W.Norimatsu) 14:40 – 15:20 INVITED . Ratchet effects in graphene with a lateral superlattice. Leonid Golub Ioffe Institute, St. Petersburg, Russia 15:20 – 15:40 Disclination approach to modelling graphene with defects Anna L. Kolesnikova, 1,2 , Mikhail A. Rozhkov, 1Tatiana S. Orlova, 1,3 Irina Hussainova, 1,4 Igor S. Yasnikov, 5 Leonid V. Zhigilei, 1,6 and Alexey E. Romanov 1,3* 1ITMO University, St. Petersburg, Russia 2Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia 3Ioffe Institute RAS, St. Petersburg, Russia 4Tallinn University of Technology, Tallinn, Estonia 5Togliatti State University,Togliatti, Russia 6University of Virginia, Charlottesville VA, USA 15:40 -16:00 Graphene in the Approximation of Interacting Electrons. M.V.Krasinkova Ioffe Institute, St.Petersburg, Russia 16:00 – 16:20 On corrected formula for irradiated graphene quantum conductivity. Natalie E. Firsova 1,2 ,* 1A.F.Ioffe Physical-Technical Institute, the Russian Academy of Sciences, 2Peter the Great Saint Petersburg Polytechnic University 16:20 – 16:40 Coffee-break 16:40 – 18:00 Section 2 “Graphene Growth I” (Chair Prof. L.Golub ) 16:40 – 17:20 INVITED Interface engineering of epitaxial graphene on SiC. Wataru Norimatsu* Department of Materials Science and Engineering, Nagoya University, Japan 17:20 -17:40 Easily scalable method for the synthesis of large volumes GNP from cyclic hydrocarbons. Aleksei Vozniakovskii ,1* Aleksandr Vozniakovskii, 2 Sergey Kidalov, 1 1 Lab.physics for Cluster Structures, Ioffe Institute 2 Sector for polymer nanostructured materials, FGUP “NIISK” 17:40 -18:00 Formation of bulk ripples in multilayer graphene during sonication assisted liquid phase exfoliation. Andrei Alaferdov, 1 Yakov Kopelevich, 2 Robson Silva, 2Raluca Savu, 1 Natalia Rozhkova, 3 Dmitry Pavlov, 4 Stanislav Moshkalev 1* 1CCSNano, University of Campinas 2DFA/IFGW, University of Campinas 3Institute of Geology/ KRC RAS 4Dept. Physics, University of Nizhni Novgorod 18:00 – 20:00 Welcome party 19 July Thursday 10:00 – 11:40 Section 3 “Graphene Growth II” (Chair Prof. A.Romanov ) 10:00 – 10:40 INVITED Electronic structure, transport and magnetic properties of graphene on SiC(001). Victor Aristov, 1,2 , Alexander Chaika, 2,3 Olga Molodtsova, 1,4 Han- Chun Wu 5 1 DESY, D-22607 Hamburg, Germany 2 ISSP RAS, 142432 Chernogolovka, Russia 3 CRANN and School of Physics, Trinity College, Dublin 2, Ireland 4 ITMO University, SaintPetersburg, Russia 5 School of Physics, BIT, Beijing 100081, People’s Republic of China 10:40 – 12:00 Graphene augmented ceramic nanofibers and their applications Roman Ivanov, 1Masoud Taled, 1 Maria Drozdova 1 and Irina Hussainova 1,2 1Department of Mechanical and Industrial Engineering 2ITMO University 12:00 – 12:20 Comparison of technological parameters for graphene growth on 6H-SiC and 4H- SiC by thermal decomposition in argon. Dmitry G. Amel’chuk 1, Sergey P. Lebedev 1, Valery Yu. Davydov 1, Alexander N. Smirnov1, Ilya A. Eliseyev 1,2 , Ekaterina V. Gushchina 1, Mikhail S. Dunaevsckiy 1, Alexander A. Lebedev 1,3 1Ioffe Institute, 26 Politekhnicheskaya, 194021 St.Petersburg, Russia 2 Saint Petersburg State University, 199034 St.Petersburg, Russia 3 ITMO University, 49 Kronverkskiy prospekt, 197101 St.Petersburg, Russia 12:20 – 12:40 Towards semiconducting graphene devices: nanopatterning vs graphene hybrid heterostructures on SiC. Nunzio Motta 1, Mojtaba Amjadipour 1, Jonathan Bradford 1, Jennifer Macleod 1, Josh Lipton-Duffin 1, Francesca Iacopi 2 1CPME School and IFE, Queensland University of Technology, 2 George st, Brisbane 4001, QLD, Australia 2Faculty of Engineering and Information Technology, University of Technology Sydney, NSW Australia. 11:40 – 12:00 Coffee-break 12:00 – 13:40 Section 4 “Graphene Characterization” (Chair Prof.V.Aristov ) 12:00 – 12:40 INVITED Electrical characteristics of graphene grown on silicon. Francesca Iacopi , School of Electrical and Data Engineering, Faculty of Engineering and IT, and Centre for Clean Energy Technology, University of Technology Sydney 12:40 – 13:00 Investigation of the Transport properties of Graphene films grown on 4H-SiC. Alexander A. Lebedev 1,2, Valerii Yu. Davydov 1, Sergei P. Lebedev 1, Alexander N. Smirnov 1, Nina V. Agrinskaya 1, and Mikhail A. Shakhov 1 1) Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia 2) ITMO University, Kronverkskii av. 49, St. Petersburg, 197101 Russia 13:00 - 13:20 Influence of graphene surface treatment on Raman spectra shift. Alexander Usikov 1,2 , Mihail Puzyk 2,3 , Ilya Eliseyev 4, Sergey Novikov 5,Sergey Lebedev 4, Iosif Barash 6, Alexander Roenkov 6, Andrew Goryachkin 6, Alexander Lebedev 2,4 , Yuri Makarov 1 1Nitride Crystals Inc., Richmond, VA 23238, USA 2University ITMO, St. Petersburg, Russia 3Herzen University, St.Petersburg, Russia 4Ioffe Institute, St. Petersburg, Russia 5Aalto University, Espoo, Finland 6Nitride Crystals Group Ltd., St. Petersburg, Russia 13:20 – 13:40 Modification of the optical and electrical properties of CVD graphene. Rybin Maxim , Shinckaruck Vyacheslav, Obraztsova Ekaterina, Obraztsova Elena Prokhorov General Physics Institute, Moscow, Russia 13:40 -14:40 LUNCH 14:40 – 16:20 Section 5 “Graphene Technology” (Chair Prof. J.Boeckl) 14:40 – 15:20 INVITED Insights into detection of toxic metals by Graphene: theory and experiment. Rositsa Yakimova , Ivan Shtepliuk, Maria Francesca Santangelo, Mikhail Vagin, Tihomir Iakimov and Jens Eriksson Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden 15:20 – 15:40 Electrolysis of graphene–on-SiC films. Mikhail Puzyk 1,2* , Alexander Usikov 2,3 , Sergey Novikov 4, Iosif Barash 5, Alexander Roenkov 5, Andrew Goryachkin 5, Yuri Makarov 3 1Herzen University, St.Petersburg, Russia 2University ITMO, St. Petersburg, Russia 3Nitride Crystals Inc., Richmond, VA 23238, USA 4Aalto University, Espoo, Finland 5Nitride Crystals Group Ltd., St. Petersburg, Russia 15:40 – 16:00 Direct transfer of wafer-scale graphene films. Maria Kim 1, Ali Shah 1, Changfeng Li 1, Petri Mustonen 1, Jannatul Susoma 1, Farshid Manoocheri 2, Harri Lipsanen 1, and Juha Riikonen 1 1Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland 2 Metrology Research Institute, Aalto University, P.O. Box 13000, FI-00076 Aalto, Finland 16:00 – 16:20 Dynamics of changes in the resistance of a graphene film contaminated by an organic matter during thermal cycling in vacuum. G.Lukyanov , A. Lebedev, M. Karpova, V. Kuzmin ITMO University, St. Petersburg, Russia 16:20 – 16:40 Coffee-break 16:40 – 18:20 Poster Section 20 July Friday 10:00 – 11:40 Section 6 “Graphene Devices I” (Chair Prof. F.Iacopi ) 10:00 – 10:40 INVITED Graphene Coatings for Alkali Resistance. Steven Fairchild 1, John Boeckl 1, Tyson Back 1, Gregory Kozlowski 2, Aaron Fletcher 2 1Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 USA 2Department of Physics, Wright State University, 3640 Colonel Glenn Hwy., Dayton, OH 45435 USA 10:40 – 11:20 INVITED Graphene for laser applications. Obraztsova E. D. 1,2 , Rybin M. G. 1,2 , Bykov A.Y. 3, Murzina T.V. 3, Obraztsov P. A. 1, Sorochenko V. R. 1, V.A. Shotniev 4, A.V. Tausenev 4 1A.M. Prokhorov General Physics Institute, RAS; [email protected] 2 Moscow Institute of Physics and Technology, Dolgoprudny, Russia; 3 M.V. Lomonosov Moscow State University, Physics Department, Moscow, Russia; 4Avesta Ltd., Troitsk, Moscow region, Russia 11:20 – 11:40 Terahertz photoresponse in graphene p-n junctions. Yuri Vasilyev,1, Galina Vasileva,1 Sergey Novikov, 2 Sergey Tarasenko, 1 Sergey Danilov 3 and Sergey Ganichev 3 1Ioffe Institute, St. Petersburg, Russia 2Micro and Nanoscience Laboratory, Aalto University, Espoo, Finland 3Institut für Angewandte Physik, Universität Regensburg, Germany 11:40 – 12:00 Coffee-break 12:00 – 14:00 Section 7 “2D Materials” (Chair Prof. S.Kubatkin) 12:00 – 12:40 INVITED Atomic-Level Characterization of 2D Nanostructures by Theoretical Analysis. F. Mehmood, J. Boeckl, R. Pachter Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, USA. 12:40 – 13:20 INVITED Silicene: graphenelike silicon from creation to field effect transistors. Guy Le Lay PIIM-CNRS Aix-Marseille University 13:20 – 13:40 Tunnel Field-Effect Transistors based on WTe2-MoS2 in-plane heterojunction Jean Choukroun 1, Marco Pala 1, Shiang Fang 2, Efthimios Kaxiras 2,3 , and Philippe Dollfus 1 1Centre for Nanoscience and Nanotechnology, CNRS, Univ.
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