Time 18 July Wed 19 July Thu 20 July Fr 21 July Sat 10:00 - Section 3 Section 6 Section 8 10:20 10:20 - Graphene Growth II Graphene Graphene 10:40 Devices I Devices II 10:40 - 11:00 11:00 - Registration 11:20 11:20 - 11:40 11:40 - Coffee break Coffee break 12:00 12:00 - Section 4 Section 7 12:20 12:20 - Graphene 2D Materials Coffee break 12:40 Characterization 12:40 - Opening Closing 13:00 13:00 - 13:20 13:20- Lunch 13:40 13:40- Lunch Lunch 14:00 14:00 - Lunch 14:20 14:20 - 14:40 14:40 - Section 1 Section 5 15:00 15:00 - Theory Graphene technology Industrial 15:20 Section 15:20 - 15:40 15:40 - 16:00 16:00 - 16:20 16:20 - Coffee break Coffee break 16:30- 16:40 18:00 16:40 - Section 2 Poster section 17:00 17:00 - Graphene Excursion along 17:20 Growth I rivers and canals 17:20 - 17:40 17:40 - 18:00 18:00 - Welcome party 20:00 Program International Symposium on Graphene Devices (ISGD-6) 18-21 July, St. Petersburg, Russia.
18 July Wednesday
11:00 – 12:40 Registration
12:40 - 13:40 Opening ( Chair Prof. R.Yakimova)
12:40 – 13:00 ITMO University – First non-classical University
13:00 -13:20 100 years of Ioffe Institute ( Prof. S.V.Lebedev, Acting Director of Ioffe Institute )
13:20 -13:40 ISGD-6 in St.Petersburg ( Prof. A.A.Lebedev )
13:40 -14:40 LUNCH
14:40 – 16:20 Section 1 “Theory” (Chair Prof. W.Norimatsu)
14:40 – 15:20 INVITED . Ratchet effects in graphene with a lateral superlattice. Leonid Golub Ioffe Institute, St. Petersburg, Russia 15:20 – 15:40 Disclination approach to modelling graphene with defects Anna L. Kolesnikova, 1,2 , Mikhail A. Rozhkov, 1Tatiana S. Orlova, 1,3 Irina Hussainova, 1,4 Igor S. Yasnikov, 5 Leonid V. Zhigilei, 1,6 and Alexey E. Romanov 1,3* 1ITMO University, St. Petersburg, Russia 2Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia 3Ioffe Institute RAS, St. Petersburg, Russia 4Tallinn University of Technology, Tallinn, Estonia 5Togliatti State University,Togliatti, Russia 6University of Virginia, Charlottesville VA, USA 15:40 -16:00 Graphene in the Approximation of Interacting Electrons. M.V.Krasinkova Ioffe Institute, St.Petersburg, Russia 16:00 – 16:20 On corrected formula for irradiated graphene quantum conductivity. Natalie E. Firsova 1,2 ,* 1A.F.Ioffe Physical-Technical Institute, the Russian Academy of Sciences, 2Peter the Great Saint Petersburg Polytechnic University
16:20 – 16:40 Coffee-break
16:40 – 18:00 Section 2 “Graphene Growth I” (Chair Prof. L.Golub )
16:40 – 17:20 INVITED Interface engineering of epitaxial graphene on SiC. Wataru Norimatsu* Department of Materials Science and Engineering, Nagoya University, Japan 17:20 -17:40 Easily scalable method for the synthesis of large volumes GNP from cyclic hydrocarbons. Aleksei Vozniakovskii ,1* Aleksandr Vozniakovskii, 2 Sergey Kidalov, 1 1 Lab.physics for Cluster Structures, Ioffe Institute 2 Sector for polymer nanostructured materials, FGUP “NIISK”
17:40 -18:00 Formation of bulk ripples in multilayer graphene during sonication assisted liquid phase exfoliation. Andrei Alaferdov, 1 Yakov Kopelevich, 2 Robson Silva, 2Raluca Savu, 1 Natalia Rozhkova, 3 Dmitry Pavlov, 4 Stanislav Moshkalev 1* 1CCSNano, University of Campinas 2DFA/IFGW, University of Campinas 3Institute of Geology/ KRC RAS 4Dept. Physics, University of Nizhni Novgorod
18:00 – 20:00 Welcome party
19 July Thursday
10:00 – 11:40 Section 3 “Graphene Growth II” (Chair Prof. A.Romanov )
10:00 – 10:40 INVITED Electronic structure, transport and magnetic properties of graphene on SiC(001). Victor Aristov, 1,2 , Alexander Chaika, 2,3 Olga Molodtsova, 1,4 Han- Chun Wu 5 1 DESY, D-22607 Hamburg, Germany 2 ISSP RAS, 142432 Chernogolovka, Russia 3 CRANN and School of Physics, Trinity College, Dublin 2, Ireland 4 ITMO University, SaintPetersburg, Russia 5 School of Physics, BIT, Beijing 100081, People’s Republic of China
10:40 – 12:00 Graphene augmented ceramic nanofibers and their applications Roman Ivanov, 1Masoud Taled, 1 Maria Drozdova 1 and Irina Hussainova 1,2 1Department of Mechanical and Industrial Engineering 2ITMO University
12:00 – 12:20 Comparison of technological parameters for graphene growth on 6H-SiC and 4H- SiC by thermal decomposition in argon. Dmitry G. Amel’chuk 1, Sergey P. Lebedev 1, Valery Yu. Davydov 1, Alexander N. Smirnov1, Ilya A. Eliseyev 1,2 , Ekaterina V. Gushchina 1, Mikhail S. Dunaevsckiy 1, Alexander A. Lebedev 1,3 1Ioffe Institute, 26 Politekhnicheskaya, 194021 St.Petersburg, Russia 2 Saint Petersburg State University, 199034 St.Petersburg, Russia 3 ITMO University, 49 Kronverkskiy prospekt, 197101 St.Petersburg, Russia
12:20 – 12:40 Towards semiconducting graphene devices: nanopatterning vs graphene hybrid heterostructures on SiC. Nunzio Motta 1, Mojtaba Amjadipour 1, Jonathan Bradford 1, Jennifer Macleod 1, Josh Lipton-Duffin 1, Francesca Iacopi 2 1CPME School and IFE, Queensland University of Technology, 2 George st, Brisbane 4001, QLD, Australia 2Faculty of Engineering and Information Technology, University of Technology Sydney, NSW Australia.
11:40 – 12:00 Coffee-break
12:00 – 13:40 Section 4 “Graphene Characterization” (Chair Prof.V.Aristov )
12:00 – 12:40 INVITED Electrical characteristics of graphene grown on silicon. Francesca Iacopi , School of Electrical and Data Engineering, Faculty of Engineering and IT, and Centre for Clean Energy Technology, University of Technology Sydney
12:40 – 13:00 Investigation of the Transport properties of Graphene films grown on 4H-SiC. Alexander A. Lebedev 1,2, Valerii Yu. Davydov 1, Sergei P. Lebedev 1, Alexander N. Smirnov 1, Nina V. Agrinskaya 1, and Mikhail A. Shakhov 1 1) Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia 2) ITMO University, Kronverkskii av. 49, St. Petersburg, 197101 Russia 13:00 - 13:20 Influence of graphene surface treatment on Raman spectra shift. Alexander Usikov 1,2 , Mihail Puzyk 2,3 , Ilya Eliseyev 4, Sergey Novikov 5,Sergey Lebedev 4, Iosif Barash 6, Alexander Roenkov 6, Andrew Goryachkin 6, Alexander Lebedev 2,4 , Yuri Makarov 1 1Nitride Crystals Inc., Richmond, VA 23238, USA 2University ITMO, St. Petersburg, Russia 3Herzen University, St.Petersburg, Russia 4Ioffe Institute, St. Petersburg, Russia 5Aalto University, Espoo, Finland 6Nitride Crystals Group Ltd., St. Petersburg, Russia
13:20 – 13:40 Modification of the optical and electrical properties of CVD graphene. Rybin Maxim , Shinckaruck Vyacheslav, Obraztsova Ekaterina, Obraztsova Elena Prokhorov General Physics Institute, Moscow, Russia
13:40 -14:40 LUNCH
14:40 – 16:20 Section 5 “Graphene Technology” (Chair Prof. J.Boeckl)
14:40 – 15:20 INVITED Insights into detection of toxic metals by Graphene: theory and experiment. Rositsa Yakimova , Ivan Shtepliuk, Maria Francesca Santangelo, Mikhail Vagin, Tihomir Iakimov and Jens Eriksson Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden
15:20 – 15:40 Electrolysis of graphene–on-SiC films. Mikhail Puzyk 1,2* , Alexander Usikov 2,3 , Sergey Novikov 4, Iosif Barash 5, Alexander Roenkov 5, Andrew Goryachkin 5, Yuri Makarov 3 1Herzen University, St.Petersburg, Russia 2University ITMO, St. Petersburg, Russia 3Nitride Crystals Inc., Richmond, VA 23238, USA 4Aalto University, Espoo, Finland 5Nitride Crystals Group Ltd., St. Petersburg, Russia
15:40 – 16:00 Direct transfer of wafer-scale graphene films. Maria Kim 1, Ali Shah 1, Changfeng Li 1, Petri Mustonen 1, Jannatul Susoma 1, Farshid Manoocheri 2, Harri Lipsanen 1, and Juha Riikonen 1 1Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland 2 Metrology Research Institute, Aalto University, P.O. Box 13000, FI-00076 Aalto, Finland
16:00 – 16:20 Dynamics of changes in the resistance of a graphene film contaminated by an organic matter during thermal cycling in vacuum. G.Lukyanov , A. Lebedev, M. Karpova, V. Kuzmin ITMO University, St. Petersburg, Russia
16:20 – 16:40 Coffee-break
16:40 – 18:20 Poster Section
20 July Friday
10:00 – 11:40 Section 6 “Graphene Devices I” (Chair Prof. F.Iacopi )
10:00 – 10:40 INVITED Graphene Coatings for Alkali Resistance. Steven Fairchild 1, John Boeckl 1, Tyson Back 1, Gregory Kozlowski 2, Aaron Fletcher 2 1Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 USA 2Department of Physics, Wright State University, 3640 Colonel Glenn Hwy., Dayton, OH 45435 USA
10:40 – 11:20 INVITED Graphene for laser applications. Obraztsova E. D. 1,2 , Rybin M. G. 1,2 , Bykov A.Y. 3, Murzina T.V. 3, Obraztsov P. A. 1, Sorochenko V. R. 1, V.A. Shotniev 4, A.V. Tausenev 4 1A.M. Prokhorov General Physics Institute, RAS; [email protected] 2 Moscow Institute of Physics and Technology, Dolgoprudny, Russia; 3 M.V. Lomonosov Moscow State University, Physics Department, Moscow, Russia; 4Avesta Ltd., Troitsk, Moscow region, Russia
11:20 – 11:40 Terahertz photoresponse in graphene p-n junctions. Yuri Vasilyev,1, Galina Vasileva,1 Sergey Novikov, 2 Sergey Tarasenko, 1 Sergey Danilov 3 and Sergey Ganichev 3 1Ioffe Institute, St. Petersburg, Russia 2Micro and Nanoscience Laboratory, Aalto University, Espoo, Finland 3Institut für Angewandte Physik, Universität Regensburg, Germany
11:40 – 12:00 Coffee-break
12:00 – 14:00 Section 7 “2D Materials” (Chair Prof. S.Kubatkin)
12:00 – 12:40 INVITED Atomic-Level Characterization of 2D Nanostructures by Theoretical Analysis. F. Mehmood, J. Boeckl, R. Pachter Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, USA. 12:40 – 13:20 INVITED Silicene: graphenelike silicon from creation to field effect transistors. Guy Le Lay PIIM-CNRS Aix-Marseille University
13:20 – 13:40 Tunnel Field-Effect Transistors based on WTe2-MoS2 in-plane heterojunction Jean Choukroun 1, Marco Pala 1, Shiang Fang 2, Efthimios Kaxiras 2,3 , and Philippe Dollfus 1 1Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Orsay, France 2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA 3John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts
13:40 – 14:00 Growth of graphene-like materials through on-surface reactions. Maryam Abyazisani, 1, Jonathan Bradford, 1Nunzio Motta, 1,2 Josh Lipton-Duffin 1,2 and Jennifer MacLeod 1,2 1School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane, Australia 2Institute for Future Environments, Queensland University of Technology (QUT), Brisbane, Australia
14:00 -15: 00 LUNCH
15:00 – 16:00 Industrial Section 5 Presentation of Graphene related company (Chair Prof. A.A.Lebedev)
15:00 – 15:15 A.S. Usikov “EpiGraf”
15:15 -15:30 R. Yakimova “Graphensic”
15:30 – 15:45 M. Rubin “RusGraphene”
15:45 – 16:00 I. Kalitukho “Solarls”
16:30 – 18:00 Excursion along rivers and canals & drinks and snacks
21 July Saturday
10:00 – 11:40 Section 8 “Graphene Devices II” (Chair Prof. Guy Le Lay)
10:00 – 10:40 INVITED Towards high frequency devices based on graphene integration with Nitride semiconductors. F. Giannazzo, 1 G. Greco, 1 E. Schilirò, 1 R. Lo Nigro, 1 I. Deretzis, 1 A. La Magna, 1 G. Nicotra, 1 C. Spinella, 1 F. Roccaforte, 1 F. Iucolano, 2 S. Ravesi, 2 M. Leszczy ński, 2 A. Michon, 4 Y. Cordier, 4 and R. Yakimova, 5 1CNR-IMM, Strada VIII, 5, ZonaIndustriale, 95121 Catania, Italy 2STMicroelectronics, StradalePrimosole 50, 95121 Catania, Italy 3TopGaN, PrymasaTysiÄclecia 98 01-424 Warsaw, Poland 4CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France 5IFM, Linköping University, Linköping, Sweden
10:40 – 11:20 INVITED Charge neutral epitaxial graphene on SiC: how to get it and what it is useful for.Hans He 1, Kyung Ho Kim 1,2 , Andrey Danilov 1, Domenico Montemurro 1, Liyang Yu 3, Yung Woo Park 2,4,5 , Floriana Lombardi 1, Thilo Bauch 1, Kasper Moth-Poulsen 3 , Tihomir Yakimov 6, Rositsa Yakimova 6, Per Malmberg 3, Christian Müller 3, Samuel Lara-Avila 1,7 , Alexander Tzalenchuk 7, Serguei Cherendichenko 1, Sergey Kubatkin 1 1Department of Microtechnology and Nanoscience, Chalmers University of Technology, 2Department of Physics and Astronomy, Seoul National University, 3Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 4Institute of Applied Physics, Seoul National University, 5Department of Physics and Astronomy, University of Pennsylvania, 6Department of Physics, Chemistry and Biology, Linkoping University 7National Physical Laboratory, London
11:20 – 11:40 The Influence of Graphene on the Fine Structure of Aluminum-Graphene Composite Materials. Yolshina L.A., Muradymov R.V. Institute of High-Temperature Electrochemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia 11:40 – 12:00 Extremely High Breakdown Current Density in Quasi-1D van der Waals Nanowires Implemented with Transition Metal Trichalcogenides. A. Geremew 1, S. Rumyantsev 1,2 , M. A. Bloodgood 3, T. T. Salguero 3 and A. A. Balandin 1 1Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521 USA 2Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia 3Department of Chemistry, University of Georgia, Athens, GA 30602 USA
12:00 – 12:20 State memory in solution gated graphene transistors. Aleksey Butko, 1 Vladimir Butko, 1,2,* , Sergey Lebedev, 1,3 Aleksander Lebedev, 1Aleksander Smirnov, 1,3 Valery Davydov, 1 and Yurii Kumzerov 1 1Ioffe Institute, Polytechnicheskaya 26, 194021, St. Petersburg, Russia 2St. Petersburg Academic University, 194021 Khlopin St. 8/3, St. Petersburg, Russia 3Saint- Petersburg State University of Information Technologies, Mechanics and Optics (ITMO), Kronverksky 49, 197101, St. Petersburg, Russia
12:20 – 12:40 Coffee-break
12:40 – 13:20 Closing (Chair Prof. A. Lebedev and R. Yakimova)
13:20 - 13:40 Presentation of the next ISGD conference. John Boeckl. Air Force Research Laboratory, USA
13:40 – 14:00 Closing remarks
14:00 -15:00 LUNCH
POSTER SESSION
P1. Charged excitons in 2D and 3D materials I. Filikhin 1*, R. Ya. Kezerashvili 2, Sh. M. Tsiklauri 3, B. Vlahovic 1 1North Carolina Central University, Durham, NC, USA 2New York City College of Technology, City University of New York, NY, USA 3Borough of Manhattan Community College, City University of New York, NY, USA *[email protected]
P2. Graphene barristor based on β-Ga 2O3 and other wide bandgap semiconductors. Mikhail Rozhkov ,1* Andrei Smirnov, 1Evgeniy Kolodeznyi, 2Vladislav Bougrov 2, and Alexey Romanov 1,3 1Department of Modern Functional Materials, ITMO University 2Department of Light Technologies and Optoelectronics, ITMO University 3Sector of Solid State Theory, Ioffe Institute RAS *E-Mail: [email protected]
P3. MD simulation and DFT calculations for pseudo-graphene crystals Mikhail A. Rozhkov ,1*Anna L. Kolesnikova, 1,2 Igor S. Yasnikov, 3and Alexey E. Romanov 1,4 1Department of Modern Functional Materials, ITMO University 2Laboratory for Nanomaterials Mechanics and Theory of Defects, Institute of Problems of Mechanical EngineeringRAS 3Institute of Mathematics, Physics and Information Technology, Togliatti State University 4Sector of Solid State Theory, Ioffe Institute RAS *E-Mail: [email protected]
P4. Investigation of the graphene-on-silicon-carbide as a basis for biosensor applications Natalja Sleptsuk 1*, Jana Toompuu 1, Alexander Lebedev, 2 Valery Davydov 2, Evgenia Kalinina 2, Raul Land 1, Oleg Korolkov 1and Toomas Rang 1 1TJS Department of Electronics, Tallinn University of Technology, Tallinn, Estonia, 19086 2Ioffe Institute, Russian Academy of Science, 194021 St. Petersburg, Russia *E-Mail: [email protected]
P5. Investigation of the stem cells cultivation on graphene Yuri Negulyaev 1*, Sergey Novikov 2, Alexander Usikov 3,4 , Sergey Lebedev 5, Iosif Barash 6, Alexander Roenkov 6, Alexander Lebedev 4,5 , and Yuri Makarov 3 1Institute of Cytology, St. Petersburg, Russia 2Aalto University, Espoo, Finland 3Nitride Crystals Inc., Richmond, VA 23238, USA 4University ITMO, St. Petersburg, Russia 5Ioffe Institute, St. Petersburg, Russia 6 Nitride Crystals Group Ltd., St. Petersburg, Russia *E-Mail: [email protected]
P6. Investigation of response of graphene-on-SiC chips to estrogen receptors Sergey Novikov 1, Liu Zhaoliang 2, Lili Zhao 3, Alexander Usikov 1,4 , Alexander Lebedev 4,5 , Yuri Makarov 6* , 1Aalto University, Espoo, Finland 2Harbin Medical University, Harbin, China 3Harbin Institute of Technology, Harbin, China 4University ITMO, St. Petersburg, Russia 5Ioffe Institute, St. Petersburg, Russia 6Nitride Crystals Inc., Richmond, VA 23238, USA *E-Mail: [email protected]
P7. Ice-water phase transition detection by single-layer graphene Vladimir Samuilov 1, Alexander Usikov 2, Yuri Makarov 2, Sergey Novikov 3 1Department of Materials Science and Engineering, Stony Brook University, NY 2Nitride Crystals Inc., Richmond, VA 23238, USA 3Aalto University, Espoo, Finland *E-Mail: [email protected]
P8. Accessible method for obtaining a 2D carbon matrix for immobilizing biological objects Aleksandr Vozniakovskii ,1 Aleksei Vozniakovskii, 2* Sergey Kidalov, 2 Irina Novikova, 3 Nina Boikova 3 1 Sector for polymer nanostructured materials, FGUP "NIISK" 2 Lab.physics for Cluster Structures, Ioffe Institute 3 FSBSI VIZR *E-Mail: [email protected]
P9. Graphene on 4H-SiC: The structural, chemical, and electronic properties Sergey P. Lebedev 1,* , Valery Yu. Davydov 1, D.Yu. Usachov 2, Alexander N. Smirnov 1, Ilya A. Eliseyev 1,2 , Ekaterina V. Gushchina 1, Mikhail S. Dunaevsckiy 1, K.A. Bokai 2, Jörg Pezoldt 3, Dmitry G. Amel’chuk 1, Alexander A. Lebedev 1 1Ioffe Institute, 26 Politekhnicheskaya, 194021 St.Petersburg, Russia 2 Saint Petersburg State University, 199034 St.Petersburg, Russia 3TechnischeUniversitätIlmenau, 14 Max Plank Ring, 98693 Ilmenau, Germany *[email protected]
P10. Estimation of the carrier concentration in the epitaxial graphene grown on 4 H- and 6H-SiC using Raman spectroscopy. Ilya Eliseyev 1,*, Valery Davydov 1, Alexander Smirnov 1, Sergey Lebedev 1, Dmitry Usachov 2Kirill Bokai 2, Jörg Pezoldt 3, Alexander Lebedev 1 1 Ioffe Institute, 26 Politekhnicheskaya, 194021 St.Petersburg, Russia 2 Saint Petersburg State University, 199034 St.Petersburg, Russia 3 Technische Universität Ilmenau, 14 Max Planck Ring, 98693 Ilmenau, Germany * [email protected]