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Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (Gaas) and Silicon (Si) Wafers : Defect Studies Artem Baranov

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Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (Gaas) and Silicon (Si) Wafers : Defect Studies Artem Baranov Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies Artem Baranov To cite this version: Artem Baranov. Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies. Micro and nanotechnolo- gies/Microelectronics. Université Paris Saclay (COmUE); Saint Petersburg Academic University (Saint Petersburg), 2018. English. NNT : 2018SACLS137. tel-01881959 HAL Id: tel-01881959 https://tel.archives-ouvertes.fr/tel-01881959 Submitted on 26 Sep 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. 7 Cellules solaires à multijonctions 3 1 LS par intégration monolithique de C A S 8 nitrures dilués sur substrats : 201 d’arséniure de gallium (GaAs) et NNT de silicium (Si): études des défauts Thèse de doctorat de St Petersburg Academic University et de l'Université Paris-Saclay, préparée à l’Université Paris-Sud École doctorale n°575 : electrical, optical, bio : physics and engineering (EOBE) Spécialité de doctorat: Electronique et Optoélectronique, Nano- et Microtechnologies Thèse présentée et soutenue à Gif-sur-Yvette, le 26 juin 2018, par M. Artem Baranov Composition du Jury : Mme. Chantal Fontaine Directeur de Recherche, CNRS-LAAS Rapporteur M. Jean-Pierre Vilcot Directeur de Recherche, CNRS-IEMN Rapporteur M. Georges Brémond Professeur des Universités, INSA-Lyon Examinateur M. Père Roca i Cabarrocas Directeur de Recherche, Ecole polytechnique-LPICM Président M. Jean-Paul Kleider Directeur de Recherche, l'Université Paris-Saclay-GeePs Directeur de thèse M. Alexander Gudovskikh Directeur de Recherche, St Petersburg Academic University Co-Directeur de thèse M. Arouna Darga Maître de Conférences, UPCM-GeePs Invité i Titre : Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si): études des défauts. Mots clés : cellules, hétérostructures, composés III-V Résumé : Les cellules solaires à multi-jonctions plus faibles que celles avec un absorbeur obtenu de type III-V possèdent des rendements de à partir de super-réseaux InP / GaPN. Plusieurs conversion de l'énergie très élevés (46%). niveaux de défauts ont été détectés dans la bande Cependant, les méthodes de fabrication interdite de ces matériaux et leurs paramètres ont généralement utilisées sont complexes et été décrits en détail. Nous avons montré qu'un coûteuses, notamment pour les cellules solaires traitement de post-croissance approprié pouvait non monolithiques associées par des techniques améliorer la qualité électronique des couches et de collage et à structure inversée. Cette thèse vise des cellules solaires. Une cellule solaire à triple à augmenter les rendements de conversion des jonction a été fabriquée avec des couches actives cellules solaires monolithiques à l'aide de d'absorbeurs de GaPAsN et de GaPN non méthodes prospectives. Le travail est focalisé sur dopées. La valeur élevée de la tension de circuit l'étude des défauts électroniquement actifs dans ouvert (>2,2V) atteste du fonctionnement des 3 les matériaux constituant les cellules solaires au sous-cellules, mais la performance globale est moyen de techniques photoélectriques et limitée par les faibles épaisseurs de couches capacitives, et il peut être scindé en trois parties. d'absorbeurs. La première partie traite des cellules solaires à Enfin, la troisième partie du travail est consacrée simple jonction avec des couches absorbantes à l'étude de couches de GaP obtenues sur des non dopées d'alliages InGaAsN de 1 eV de bande substrats de Si à des températures inférieures à interdite de différentes épaisseurs obtenues sous 400 ° C par une méthode originale de dépôt de forme de super-réseaux (InAs / GaAsN) par couches atomiques assistée par plasma (PE- épitaxie à jets moléculaires (MBE) sur des ALD). En effet, celle-ci utilise un équipement de substrats de GaAs. Pour des épaisseurs dépôt chimique en phase vapeur assisté par inférieures à 1200 nm, la concentration de plasma et elle repose sur l'interaction de la défauts est négligeable et n'affecte pas fortement surface avec les atomes de Ga et P provenant les propriétés photoélectriques, tandis que que respectivement du triméthylgallium et de la pour une épaisseur de 1600 nm, la forte phosphine qui sont injectés alternativement. concentration de défauts détectés réduit la durée Nous avons également fait croître des couches en de vie des porteurs photogénérés, et conduit à utilisant un processus continu (fournissant une baisse significative du rendement quantique simultanément les atomes P et Ga) et observé que externe et des performances de la cellule. leurs propriétés électriques et structurelles La deuxième partie du travail est consacrée à étaient moins bonnes que celles obtenues par la l'étude de cellules solaires à une et plusieurs méthode PE-ALD proposée. Nous avons exploré jonctions avec des couches actives de l'influence des conditions de croissance sur les (In)GaP(As)N obtenues par MBE sur des hétérostructures GaP / Si. Nous avons constaté substrats respectifs de GaP et de Si. Nous avons qu'une faible puissance de plasma RF conduit à trouvé que les cellules solaires de type p-i-n avec de meilleures propriétés photoélectriques, des couches actives de GaPAsN non dopé structurelles et à moins de défauts, grâce à une présentaient de meilleures performances que les meilleure passivation du substrat de silicium. En cellules solaires de type p-n avec des couches outre, nous avons démontré que, contrairement à actives de GaPAsN dopé n. De plus, les cellules des résultats de la littérature utilisant des solaires avec une couche d'absorbeur en GaPAsN procédés MBE, la technique PE-ALD n'affecte non dopé présentent de meilleures propriétés pas ou très peu les propriétés électroniques des photoélectriques et des concentrations de défauts substrats de silicium et aucune désactivation des dopants n'a été observée. Université Paris-Saclay Espace Technologique / Immeuble Discovery Route de l’Orme aux Merisiers RD 128 / 91190 Saint-Aubin, France ii Title : Multijunction solar cells from monolithic integration of dilute nitrides on gallium arsenide (GaAs) and silicon (Si) wafers: defect studies Keywords : solar cells, heterostructures, III-V compounds Abstract : Multi-junction solar cells based on concentrations, than those with an SDA III-V compounds have reached very high power InP/GaPN absorber layer. Different defect conversion efficiencies (46%). However, the levels were detected by capacitance methods in fabrication methods that are generally used are these materials and their parameters were complex and expensive for non-monolithic described in detail. We showed that a suitable bonded and inverted solar cells. This thesis is post-growth treatment could improve the devoted to the study of prospective methods to electronic quality of the GaPAsN layer and the increase the efficiency of monolithic solar cells. solar cell properties. Also, a triple-junction solar The work is focused on the study of cell was fabricated with active layers of i- electronically active defects in the materials GaPAsN and i-GaPN. All subcells were found constituting the solar cells by means of to be operating, leading to a large open circuit photoelectric and capacitance techniques voltage (>2.2 V), but the overall performance is (admittance spectroscopy, DLTS,…) and it can limited by the low value of the quantum be divided into three parts. efficiency due to low thicknesses of i-layers that The first part deals with single-junction solar should be increased for better absorption. cells wherein the absorber is made of i-layers of Finally, the third part is devoted to the study of 1 eV bandgap InGaAsN compounds with GaP layers grown on Si wafers at temperatures various thicknesses grown as sub-monolayer below 400 °C using an original method called digital alloys (SDA) of InAs/GaAsN by plasma-enhanced atomic-layer deposition (PE- molecular-beam epitaxy (MBE) on GaAs ALD). Indeed, it uses a plasma-enhanced wafers. The cell with 900 nm thick InGaAsN chemical vapor deposition equipment and it is exhibits the best photovoltaic performance and based on the alternate interaction of the wafer no defects could be evidenced from capacitance surface with Ga and P atoms coming from techniques. When the thickness is increased to injected trimethylgallium and phosphine, 1200 nm, defects were detected, but their respectively. We also grew layers using a concentration is low so it did not strongly affect continuous process (providing simultaneously the photoelectric properties. Further increase to the P and Ga atoms) and observed that their 1600 nm of the layer thickness was shown to electric and structural properties were poorer lead to a higher defect concentration causing a than that grown by the proposed PE-ALD change in the band diagram of the structure and method. The influence of growth conditions on lowering the lifetime of photogenerated carriers. the GaP/Si heterostructures was explored. We This could explain the drastic drop of the found that low RF-plasma power leads to better external quantum efficiency, and the overall photoelectric, structural and defect-related poor performance of the solar cell. properties, due to a better passivation of the The second part is devoted to the study of single- silicon wafer. In addition, we demonstrated that, and multi-junction solar cells with active layers contrary to results reported in the literature using of (In)GaP(As)N grown by molecular beam MBE processes, our growth process does not epitaxy (MBE) on GaP and Si wafers, affect the electronic properties of phosphorous respectively.
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