MOHAMMAD MAHDI KHATAMI Gender, place and date of birth: Male| Iran| 23 April 1989 Advanced Device Simulation Lab (ADSL), Department of Electrical and Address: Computer Engineering, Tarbiat Modares University, Tehran, Iran Phone: +98 912 8410083 Email:
[email protected] [email protected] [email protected] EDUCATION 2014-present PhD candidate in Electrical engineering Tarbiat Modares University, Tehran, Iran Thesis: “ Studying phonon scattering in silicene under the effects of strain and external electric field” Supervisor: Prof. Mohammad Kazem Moravvej-Farshi Co-advisor: Dr. Mahdi Pourfath GPA up to now: 17.88/20 2011-2014 Master of Science in Electrical Engineering Amirkabir University of Technology, Tehran, Iran Thesis: “Simulation, analysis and improve characteristics of a strained Si p MOSFET” First supervisor: Dr. Majid Shalchian Second supervisor: Dr. Saeid Khatami Advisor: Dr. Mohammad Reza Kolahdouz Esfahani GPA:18.51/20 2007-2011 Bachelor of Science in Electrical Engineering Zanjan University, Zanjan, Iran Thesis: “Speed control of a DC motor using ARM micro-controller” Supervisor: Dr. Vahid Rashtchi GPA: 17.6/20 RESEARCH INTRESTS 2D materials (Silicene and Graphene), Carrier transport, Phonon scattering, Mobility, Strain, Field, SiGe FET, Solar cells, … PUBLICATIONS • Mohammad Mahdi Khatami, Majid Shalchian, Mohammadreza Kolahdouz, "Impacts of virtual substrate doping on high frequency characteristics of biaxially strained Si PMOSFET", Superlattices and Microstructures, vol. 85, pp. 82–91, 2015 • Mohammad Mahdi Khatami, Majid Shalchian, Mohammadreza Kolahdouz, “Analysis and improvement of off-state current in biaxially strained Si nano p-MOSFET by virtual substrate’s doping control”, Journal of Iranian Association of Electrical and Electronics, Vol. 13, No. 4, pp.