List of semiconductor fabrication plants This is a list of semiconductor fabrication plants: A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are made. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design only firms(fabless companies), or by Pure Play foundries, who only manufacture designs from fabless companies but do not design their own ICs. Notes: Plant location is where the plant is located, Started production is when the plant officially started volume(or mass) production, Wafer size is the largest wafer size that the facility is capable of processing, Process Technology Node is the size of the smallest features that the facility is capable of etching onto the wafers, Wafer capacity per month is the plant's Nameplate capacity. It does not mean that the facility is working at that capacity. The number of wafers that a plant actually processes in relation to its nameplate capacity is referred to as the plant's utilization. Technology/Products are the products that the facility is capable of producing, as not all plants can produce all products on the market. Open plants are listed below; plants that are closed are below this first table. Contents Open Closed See also References External links Open Process Wafer Started Wafer size technology Company Plant name Plant location Plant cost (in US$ billions) production Technology/products production (in mm) node (in capacity/month nm) ISRO SCL India, Chandigarh 200 180 MEMS, CMOS, CCD, N.S. CMOS, HV, MEMS, RF, Logic, Silterra Malaysia Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90-180 28,000–30,000 Analog, Mix Signal Microchip Fab 2 USA, AZ, Tempe 1994 200 Microchip Fab 4 USA, OR, Gresham 2004 200 Microchip Fab 5 USA, CO, Colorado Springs 150 Nanya Fab Taiwan, ? 199x 300 DRAM Nanya Fab 2 Taiwan, Linkou 0.8 2000 200[1] 175 30,000 DRAM Nanya Fab 3A [2] Taiwan, New Taipei City[3] 1.85[4] 2018 20 DRAM Intel D1D[5][6] USA, OR, Hillsboro 2003 300 10 / 14 / 22 Microprocessors[7] Intel D1C[5][6] USA, OR, Hillsboro 2001 300 14 / 22 / 32 Microprocessors[7] Intel D1X[8][6] USA, OR, Hillsboro 2013 300 10 / 14 Microprocessors[7] Intel D1X Module 2[9] 2 2015(planned?) 450(planned?) Intel Fab 12[5][6] USA, AZ, Chandler 1996 300 22 / 65 Microprocessors & Chipsets[7] Intel Fab 32[5][10] USA, AZ, Chandler 3 2007 300 45 Intel Fab 32[5][6] USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[7] Intel Fab 42[11][12][6] USA, AZ, Chandler 5, 7[13] 2020 (plan)[14] 300 7 Microprocessors[7] Intel Fab 11x[5][6] USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[7] Microprocessors and Intel Fab 18[15] Israel, Kiryat Gat 1996 200 65 chipsets[16] Intel Fab 10[5] Ireland, Leixlip 1994 200 Intel Fab 14[5] Ireland, Leixlip 1998 200 14 / 65 / Microprocessors, Chipsets and Intel Fab 24[5][6] Ireland, Leixlip 2004 300 90[17] Comms[7] Intel Fab 28[5][6] Israel, Kiryat Gat 2008 300 22 / 45 Microprocessors[7] Intel Fab 68[5][18] China, Dalian 2.5 2010 300 65[19] VNAND[7] Intel Costa Rica, Heredia, Belén 1997 300 22 TowerJazz (formerly Maxim) San Antonio[20][21] USA, TX, San Antonio 2003 200 180 Al BEOL, Power, RF Analog Apple (formerly Maxim, formerly Samsung) X3[22] USA, CA, San Jose ?, 1997, 2015[23] Maxim MaxFabNorth[24] USA, OR, Beaverton Mikron Russia, Zelenograd 90-180 VSP Mikron WaferFab[25] Russia, Voronezh 1959 100/150 900+ 6000 Analog, power NXP Semiconductors(Formerly Freescale Semiconductor) MOTOFAB1[26] Mexico, Guadalajara 2002 (Formerly Motorola) Micron Fab 1 USA, VA, Manassas 1981 300 DRAM Micron Fab 2 IMFT Lehi, UT 300 25[27] 70,000 DRAM Micron Memory Micron Taiwan, Taichung Taiwan[28] Micron Taiwan, Taichung[29] Micron Fab 6 USA, VA, Manassas 300 25[27] 70,000 DRAM, NAND FLASH, NOR Micron Fab 4[30] USA, ID, Boise 300 RnD Micron Fab 13[31] Singapore, Singapore 200 NOR Micron Fab 10[32] Singapore, Singapore 300 100,000 NAND FLASH Fab 7 (formerly TECH Micron Semiconductor, Singapore, Singapore 300 60,000 NAND FLASH Singapore)[33] Fab 15 (formerly Elpida Micron Memory, Japan, Hiroshima 300 20 and under 100,000 DRAM Hiroshima)[30][34] Fab 16 (formerly Micron Taiwan, Taichung 300 30 and under 80,000 DRAM Rexchip, Taichung)[30] Fab 11 (formerly Micron Taiwan, Taoyuan 300 20 and under 80,000 DRAM Inotera)[35] Micron UK, Scotland[36] Micron Singapore[37] 200 NOR Flash Micron Semiconductor Micron Singapore[38] Asia Micron China, Xi'an[39] GlobalFoundries Fab 9 USA, VT, Essex Junction 200 90–350 40,000 GlobalFoundries Fab 10 USA, NY, East Fishkill 2.5 2002 300 22–90 14,000 GlobalFoundries Fab 1 Module 1[40] Germany, Dresden 3.6[41] 2005 300 22–45 35,000[41] Foundry GlobalFoundries Fab 1 Module 2 Germany, Dresden 4.9[41] 1999 300 22–45 25,000[41] Foundry GlobalFoundries Fab 1 Module 3 Germany, Dresden 2.3[41] 2011[41] 300 22–45 6,000[41] Foundry 40, 90, 65, GlobalFoundries Fab 7[40] Singapore 4.6[41] 2005[41] 300 50,000 Bulk CMOS, SoI 130 GlobalFoundries Fab 8[40] USA, NY, Malta 4.6, 2.1 2012, 2014[41] 300 14 / 22 / 28 60,000 High-K Metal Gate[42] Technology Development GlobalFoundries USA, NY, Malta 1.5[41] 2014[41] Center[41] GlobalFoundries Fab 2[43] Singapore 1.3[41] 1995[41] 200 350–600 56,000[41] GlobalFoundries Fab 3/5[43] Singapore 0.915, 1.2[41] 1997, 1995[41] 200 180–350 54,000 GlobalFoundries Fab 3E[43] Singapore 1.3[41] 200 180 34,000 GlobalFoundries Fab 6[43] Singapore 1.4[41] 2000[41] 200 110–180 45,000 GlobalFoundries Abu Dhabi[41] UAE, Abu Dhabi[41] 6.8[41] 2016[41] 110–180 45,000 Foundry GlobalFoundries China, Chengdu[44] 10 Planned Hindustan Semiconductor Manufacturing India, Gujarat 6 300 14 20,000 Yokkaichi Toshiba Japan, Yokkaichi 1992 Flash Memory Operations[45][46] Japan, 800 Yamanoisshikicho, Fab 5 Phase 1(at Yokkaichi, Mie (https://maps.google.co Toshiba/SanDisk 2011 Flash Yokkaichi Operations) m/maps?q=800+Yamanoisshikicho,+Yo kkaichi,+Mie,+Japan)[47] Fab 5 Phase 2[47](at Toshiba/SanDisk Japan, Mie 2011 300 15[48] Flash Yokkaichi Operations) Fab 3(at Yokkaichi Toshiba[49] Japan, Yokkaichi NAND Memory Operations) Fab 4(at Yokkaichi Toshiba[50] Japan, Yokkaichi 2007 NAND Memory Operations) Toshiba[51] Kaga Toshiba Japan, Ishikawa Power Semiconductor devices Toshiba[52] Oita Operations Japan, Kyushu 1.6, 1.7, 1.8(Estimates)(Combined 2018, Summer; Fab 6(phase 1)(at costs of installation of equipment Toshiba[53][54] Japan, Yokkaichi Cleanroom is BiCS FLASH™ Yokkaichi Operations)[55] at Phase 1 and construction of being equipped Phase 2)[56][46] 1.6, 1.7, 1.8(Estimates)(Combined Fab 6(phase 2)(at costs of installation of equipment Toshiba[53][54] Japan, Yokkaichi Planned BiCS FLASH™ Yokkaichi Operations) at Phase 1 and construction of Phase 2)[56][46] Fab 2(at Yokkaichi Toshiba[53] Japan, Yokkaichi 1995 3D NAND Operations) New Fab 2(at Yokkaichi Toshiba[57][58] Japan, Yokkaichi 2016, July 15 3D NAND Operations) Japan, 5-2-2, Omikacho, Hitachi-shi, Hitachi[59] Rinkai Factory MEMS Foundry Ibaraki, 319-1221 Japan, 20 Aza Oohara, Shimo-Ota, Hitachi[59] Haramachi Factory Haramachi-ku, Minamisouma-shi, Power Semiconductors Fukushima, 975-0041 Japan, 545, Itchohata, Chuo-shi, Hitachi[59] Yamanashi Factory Power Semiconductors Yamanashi, 409-3813 TSMC Fab 2[60] Taiwan, Hsinchu 0.735[41] 1990[41] 150 88,000[61][41] Foundry TSMC Fab 3 Taiwan, Hsinchu 2[41] 1995[41] 200 100,000[41] TSMC Fab 5 Taiwan, Hsinchu 1.4[41] 1997[41] 200 48,000[41] 2000, January; TSMC Fab 6 Taiwan, Tainan 2.1[41] 200, 300 180-? 99,000[41] Foundry 2001[62] TSMC Fab 7[63] Taiwan, Tainan 200 TSMC Fab 8 Taiwan, Hsinchu 1.6[41] 1998[41] 200 85,000[41] TSMC Fab 10 China, Shanghai 1.3[41] 2004[41] 200 74,000 77,500-123,800(all 5.2, 21.6(total, all phases TSMC Fab 12 Taiwan, Hsinchu 2001[41] 300 150-28 phases combined)[41] combined)[41] TSMC Fab 12A Taiwan, Hsinchu 300 25,000 TSMC Fab 12B Taiwan, Hsinchu 300 25,000 TSMC Fab 12(P4) Taiwan, Hsinchu 6[41] 2009[41] 300 20 40,000[41] TSMC Fab 12(P5) Taiwan, Hsinchu 3.6[41] 2011[41] 300 20 6,800[41] TSMC Fab 12(P6) Taiwan, Hsinchu 4.2[41] 2013[41] 300 16 25,000 TSMC Fab 12(P7) Taiwan, Hsinchu (future) 300 16 TSMC Fab 12(P8)[41] Taiwan, Chunan[41] 5.1[41] 2017[41] 450[41] 2002,[62] TSMC Fab 14 Taiwan, Tainan 5.1[41] 300 20 82,500[41] 2004[41] TSMC Fab 14(B) Taiwan, Tainan 300 16 50,000+[64] TSMC Fab 14(P3)[41] Taiwan, Tainan 3.1[41] 2008[41] 300 16 55,000[41] TSMC Fab 14(P4)[41] Taiwan, Tainan 3.750[41] 2011[41] 300 16 45,500[41] TSMC Fab 14(P5)[41] Taiwan, Tainan 3.650[41] 2013[41] 300 16 TSMC Fab 14(P7)[41] Taiwan, Tainan 4.850[41] 2015[41] 300 16 TSMC Fab 14(P6)[41] Taiwan, Tainan 4.2[41] 2014[41] 300 16 TSMC WaferTech Fab 11 USA, WA, Camas 200 100,000+(166,000 TSMC Fab 15[65] Taiwan, Taichung 9.3 2011 300 20 estimate)[66][64][67] TSMC Fab 15(B) Taiwan, Taichung 300 TSMC Fab 15(P1)[41] Taiwan, Taichung 3.125[41] 2011 300 4,000[41] TSMC Fab 15(P2)[41] Taiwan, Taichung 3.150[41] 2012[41] 300 TSMC Fab 15(P3)[41] Taiwan, Taichung 3.750[41] 2013[41] 300 TSMC Fab 15(P4)[41] Taiwan, Taichung 3.800[41] 2014[41] 300 TSMC Fab 15(P5)[41] Taiwan, Taichung 9.020[41] 2016[41] 300 2020(Planned) Taiwan, Southern Taiwan Science TSMC Fab 18 17.08 Under 300 5[70] 120,000 Park[68][69] Construction Under TSMC[71] NJ China, Nanjing 300 20,000 Construction TSMC[72][73][74] Taiwan, Tainan Science Park[75] 20(expected)[76] Future 3[77][78] TSMC(formerly WSMC)[79] 200 Foundry(current) TSMC(formerly Acer Semiconductor Manufacturing Inc.) 200 (formerly Texas Instruments)[80][81][82] DRAM(former), Logic(former), TSMC 20[83] 2022(planned)[84] 3 Foundry Epistar(Formerly