List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants: A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are made. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design only firms(fabless companies), or by Pure Play foundries, who only manufacture designs from fabless companies but do not design their own ICs.

Notes:

Plant location is where the plant is located, Started production is when the plant officially started volume(or mass) production, Wafer size is the largest wafer size that the facility is capable of processing, Process Technology Node is the size of the smallest features that the facility is capable of etching onto the wafers, Wafer capacity per month is the plant's Nameplate capacity. It does not mean that the facility is working at that capacity. The number of wafers that a plant actually processes in relation to its nameplate capacity is referred to as the plant's utilization. Technology/Products are the products that the facility is capable of producing, as not all plants can produce all products on the market. Open plants are listed below; plants that are closed are below this first table.

Contents

Open Closed See also References External links

Open

Process Wafer Started Wafer size technology Company Plant name Plant location Plant cost (in US$ billions) production Technology/products production (in mm) node (in capacity/month nm)

ISRO SCL India, Chandigarh 200 180 MEMS, CMOS, CCD, N.S.

CMOS, HV, MEMS, RF, Logic, Silterra Malaysia Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90-180 28,000–30,000 Analog, Mix Signal

Microchip Fab 2 USA, AZ, Tempe 1994 200

Microchip Fab 4 USA, OR, Gresham 2004 200

Microchip Fab 5 USA, CO, Colorado Springs 150

Nanya Fab Taiwan, ? 199x 300 DRAM

Nanya Fab 2 Taiwan, Linkou 0.8 2000 200[1] 175 30,000 DRAM

Nanya Fab 3A [2] Taiwan, New Taipei City[3] 1.85[4] 2018 20 DRAM

Intel D1D[5][6] USA, OR, Hillsboro 2003 300 10 / 14 / 22 Microprocessors[7]

Intel D1C[5][6] USA, OR, Hillsboro 2001 300 14 / 22 / 32 Microprocessors[7]

Intel D1X[8][6] USA, OR, Hillsboro 2013 300 10 / 14 Microprocessors[7]

Intel D1X Module 2[9] 2 2015(planned?) 450(planned?)

Intel Fab 12[5][6] USA, AZ, Chandler 1996 300 22 / 65 Microprocessors & Chipsets[7]

Intel Fab 32[5][10] USA, AZ, Chandler 3 2007 300 45

Intel Fab 32[5][6] USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[7]

Intel Fab 42[11][12][6] USA, AZ, Chandler 5, 7[13] 2020 (plan)[14] 300 7 Microprocessors[7]

Intel Fab 11x[5][6] USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[7]

Microprocessors and Intel Fab 18[15] Israel, Kiryat Gat 1996 200 65 chipsets[16]

Intel Fab 10[5] Ireland, Leixlip 1994 200

Intel Fab 14[5] Ireland, Leixlip 1998 200

14 / 65 / Microprocessors, Chipsets and Intel Fab 24[5][6] Ireland, Leixlip 2004 300 90[17] Comms[7]

Intel Fab 28[5][6] Israel, Kiryat Gat 2008 300 22 / 45 Microprocessors[7]

Intel Fab 68[5][18] China, Dalian 2.5 2010 300 65[19] VNAND[7]

Intel Costa Rica, Heredia, Belén 1997 300 22

TowerJazz (formerly Maxim) San Antonio[20][21] USA, TX, San Antonio 2003 200 180 Al BEOL, Power, RF Analog

Apple (formerly Maxim, formerly Samsung) X3[22] USA, CA, San Jose ?, 1997, 2015[23]

Maxim MaxFabNorth[24] USA, OR, Beaverton

Mikron Russia, Zelenograd 90-180

VSP Mikron WaferFab[25] Russia, Voronezh 1959 100/150 900+ 6000 Analog, power

NXP Semiconductors(Formerly Freescale Semiconductor) MOTOFAB1[26] Mexico, Guadalajara 2002 (Formerly Motorola)

Micron Fab 1 USA, VA, Manassas 1981 300 DRAM

Micron Fab 2 IMFT Lehi, UT 300 25[27] 70,000 DRAM

Micron Memory Micron Taiwan, Taichung Taiwan[28]

Micron Taiwan, Taichung[29]

Micron Fab 6 USA, VA, Manassas 300 25[27] 70,000 DRAM, NAND FLASH, NOR

Micron Fab 4[30] USA, ID, Boise 300 RnD

Micron Fab 13[31] Singapore, Singapore 200 NOR

Micron Fab 10[32] Singapore, Singapore 300 100,000 NAND FLASH

Fab 7 (formerly TECH Micron Semiconductor, Singapore, Singapore 300 60,000 NAND FLASH Singapore)[33]

Fab 15 (formerly Elpida Micron Memory, Japan, Hiroshima 300 20 and under 100,000 DRAM Hiroshima)[30][34]

Fab 16 (formerly Micron Taiwan, Taichung 300 30 and under 80,000 DRAM Rexchip, Taichung)[30]

Fab 11 (formerly Micron Taiwan, Taoyuan 300 20 and under 80,000 DRAM Inotera)[35]

Micron UK, Scotland[36]

Micron Singapore[37] 200 NOR Flash

Micron Semiconductor Micron Singapore[38] Asia

Micron China, Xi'an[39]

GlobalFoundries Fab 9 USA, VT, Essex Junction 200 90–350 40,000

GlobalFoundries Fab 10 USA, NY, East Fishkill 2.5 2002 300 22–90 14,000

GlobalFoundries Fab 1 Module 1[40] Germany, Dresden 3.6[41] 2005 300 22–45 35,000[41] Foundry

GlobalFoundries Fab 1 Module 2 Germany, Dresden 4.9[41] 1999 300 22–45 25,000[41] Foundry

GlobalFoundries Fab 1 Module 3 Germany, Dresden 2.3[41] 2011[41] 300 22–45 6,000[41] Foundry

40, 90, 65, GlobalFoundries Fab 7[40] Singapore 4.6[41] 2005[41] 300 50,000 Bulk CMOS, SoI 130

GlobalFoundries Fab 8[40] USA, NY, Malta 4.6, 2.1 2012, 2014[41] 300 14 / 22 / 28 60,000 High-K Metal Gate[42]

Technology Development GlobalFoundries USA, NY, Malta 1.5[41] 2014[41] Center[41]

GlobalFoundries Fab 2[43] Singapore 1.3[41] 1995[41] 200 350–600 56,000[41]

GlobalFoundries Fab 3/5[43] Singapore 0.915, 1.2[41] 1997, 1995[41] 200 180–350 54,000

GlobalFoundries Fab 3E[43] Singapore 1.3[41] 200 180 34,000

GlobalFoundries Fab 6[43] Singapore 1.4[41] 2000[41] 200 110–180 45,000

GlobalFoundries Abu Dhabi[41] UAE, Abu Dhabi[41] 6.8[41] 2016[41] 110–180 45,000 Foundry

GlobalFoundries China, Chengdu[44] 10 Planned

Hindustan Semiconductor Manufacturing India, Gujarat 6 300 14 20,000

Yokkaichi Toshiba Japan, Yokkaichi 1992 Flash Memory Operations[45][46]

Japan, 800 Yamanoisshikicho, Fab 5 Phase 1(at Yokkaichi, Mie (https://maps.google.co Toshiba/SanDisk 2011 Flash Yokkaichi Operations) m/maps?q=800+Yamanoisshikicho,+Yo kkaichi,+Mie,+Japan)[47]

Fab 5 Phase 2[47](at Toshiba/SanDisk Japan, Mie 2011 300 15[48] Flash Yokkaichi Operations)

Fab 3(at Yokkaichi Toshiba[49] Japan, Yokkaichi NAND Memory Operations)

Fab 4(at Yokkaichi Toshiba[50] Japan, Yokkaichi 2007 NAND Memory Operations)

Toshiba[51] Kaga Toshiba Japan, Ishikawa Power Semiconductor devices

Toshiba[52] Oita Operations Japan, Kyushu

1.6, 1.7, 1.8(Estimates)(Combined 2018, Summer; Fab 6(phase 1)(at costs of installation of equipment Toshiba[53][54] Japan, Yokkaichi Cleanroom is BiCS FLASH™ Yokkaichi Operations)[55] at Phase 1 and construction of being equipped Phase 2)[56][46]

1.6, 1.7, 1.8(Estimates)(Combined Fab 6(phase 2)(at costs of installation of equipment Toshiba[53][54] Japan, Yokkaichi Planned BiCS FLASH™ Yokkaichi Operations) at Phase 1 and construction of Phase 2)[56][46]

Fab 2(at Yokkaichi Toshiba[53] Japan, Yokkaichi 1995 3D NAND Operations)

New Fab 2(at Yokkaichi Toshiba[57][58] Japan, Yokkaichi 2016, July 15 3D NAND Operations)

Japan, 5-2-2, Omikacho, Hitachi-shi, Hitachi[59] Rinkai Factory MEMS Foundry Ibaraki, 319-1221

Japan, 20 Aza Oohara, Shimo-Ota, Hitachi[59] Haramachi Factory Haramachi-ku, Minamisouma-shi, Power Semiconductors Fukushima, 975-0041

Japan, 545, Itchohata, Chuo-shi, Hitachi[59] Yamanashi Factory Power Semiconductors Yamanashi, 409-3813

TSMC Fab 2[60] Taiwan, Hsinchu 0.735[41] 1990[41] 150 88,000[61][41] Foundry

TSMC Fab 3 Taiwan, Hsinchu 2[41] 1995[41] 200 100,000[41]

TSMC Fab 5 Taiwan, Hsinchu 1.4[41] 1997[41] 200 48,000[41]

2000, January; TSMC Fab 6 Taiwan, Tainan 2.1[41] 200, 300 180-? 99,000[41] Foundry 2001[62]

TSMC Fab 7[63] Taiwan, Tainan 200

TSMC Fab 8 Taiwan, Hsinchu 1.6[41] 1998[41] 200 85,000[41]

TSMC Fab 10 China, Shanghai 1.3[41] 2004[41] 200 74,000

77,500-123,800(all 5.2, 21.6(total, all phases TSMC Fab 12 Taiwan, Hsinchu 2001[41] 300 150-28 phases combined)[41] combined)[41]

TSMC Fab 12A Taiwan, Hsinchu 300 25,000

TSMC Fab 12B Taiwan, Hsinchu 300 25,000

TSMC Fab 12(P4) Taiwan, Hsinchu 6[41] 2009[41] 300 20 40,000[41]

TSMC Fab 12(P5) Taiwan, Hsinchu 3.6[41] 2011[41] 300 20 6,800[41]

TSMC Fab 12(P6) Taiwan, Hsinchu 4.2[41] 2013[41] 300 16 25,000

TSMC Fab 12(P7) Taiwan, Hsinchu (future) 300 16

TSMC Fab 12(P8)[41] Taiwan, Chunan[41] 5.1[41] 2017[41] 450[41]

2002,[62] TSMC Fab 14 Taiwan, Tainan 5.1[41] 300 20 82,500[41] 2004[41]

TSMC Fab 14(B) Taiwan, Tainan 300 16 50,000+[64]

TSMC Fab 14(P3)[41] Taiwan, Tainan 3.1[41] 2008[41] 300 16 55,000[41]

TSMC Fab 14(P4)[41] Taiwan, Tainan 3.750[41] 2011[41] 300 16 45,500[41]

TSMC Fab 14(P5)[41] Taiwan, Tainan 3.650[41] 2013[41] 300 16

TSMC Fab 14(P7)[41] Taiwan, Tainan 4.850[41] 2015[41] 300 16

TSMC Fab 14(P6)[41] Taiwan, Tainan 4.2[41] 2014[41] 300 16

TSMC WaferTech Fab 11 USA, WA, Camas 200

100,000+(166,000 TSMC Fab 15[65] Taiwan, Taichung 9.3 2011 300 20 estimate)[66][64][67]

TSMC Fab 15(B) Taiwan, Taichung 300

TSMC Fab 15(P1)[41] Taiwan, Taichung 3.125[41] 2011 300 4,000[41]

TSMC Fab 15(P2)[41] Taiwan, Taichung 3.150[41] 2012[41] 300

TSMC Fab 15(P3)[41] Taiwan, Taichung 3.750[41] 2013[41] 300

TSMC Fab 15(P4)[41] Taiwan, Taichung 3.800[41] 2014[41] 300

TSMC Fab 15(P5)[41] Taiwan, Taichung 9.020[41] 2016[41] 300

2020(Planned) Taiwan, Southern Taiwan Science TSMC Fab 18 17.08 Under 300 5[70] 120,000 Park[68][69] Construction

Under TSMC[71] NJ China, Nanjing 300 20,000 Construction

TSMC[72][73][74] Taiwan, Tainan Science Park[75] 20(expected)[76] Future 3[77][78]

TSMC(formerly WSMC)[79] 200

Foundry(current) TSMC(formerly Acer Semiconductor Manufacturing Inc.) 200 (formerly Texas Instruments)[80][81][82] DRAM(former), Logic(former),

TSMC 20[83] 2022(planned)[84] 3 Foundry

Epistar(Formerly TSMC)[85][86][87] Taiwan, Hsin-Chu Science Park 0.080 2011, Second half LEDs

UMC Fab 6A Taiwan, Hsinchu 0.35[41] 1989[41] 150 450 50,000

UMC Fab 8AB Taiwan, Hsinchu 1[41] 1995[41] 200 250 70,000[88]

UMC Fab 8C Taiwan, Hsinchu 1[41] 1998[41] 200 350-110 29,000

UMC Fab 8D Taiwan, Hsinchu 1.5[41] 2000[41] 200 90 32,000

UMC Fab 8E Taiwan, Hsinchu 0.96[41] 1998[41] 200 180 35,000

UMC Fab 8F Taiwan, Hsinchu 1.5[41] 2000[41] 200 150 32,000

UMC Fab 8S Taiwan, Hsinchu 0.8[41] 2004[41] 200 350-250 25,000

UMC Fab 8N Taiwan, Hsinchu 0.750[41] 2003[41] 200 350-110 50,000

2001, 2010, UMC Fab 12A Taiwan, Tainan 4.65, 4.1, 6.6, 7.3[41] 300 14 82,000[89] 2014, 2017[41]

UMC Fab 12i Singapore 3.7[41] 2004[41] 300 130-40 50,000

UMC Fab 12X China, Xiamen 300 55-28 50,000

UMC Fab 1 Japan, Tateyama 0.543[41] 1997[41]

UMC Japan[62][90] 300 180-?

Vanguard International Semiconductor Fab 1 Taiwan, Hsinchu 0.997[41] 1994[41] 200 55,000

Fab 2(formerly Fab Vanguard International Semiconductor(formerWinbond) Taiwan, Hsinchu 0.965[41] 1998[41] 200 55,000 4&5)[91]

IM Flash IM Flash[92] Singapore 2011 300 25

IM Flash IM Flash USA, UT, Lehi 300 20 3D XPoint

IM Flash IM Flash USA, VA, Manassas

NXP Semiconductors ATMC[93] USA, TX, Austin 1995 200 90

NXP Semiconductors Chandler Fab[94] USA, AZ, Chandler 1.1[95] 1993 200 180

NXP Semiconductors Oak Hill Fab[96] USA, TX, Austin .8[97] 1991 200 250

Small-signal and bipolar Nexperia Hamburg site[98] Germany, Hamburg 1953 200 35,000 discrete devices

UK, Bramhall Moor Lane, Pepper Rd, Nexperia Manchester[98] 1987? 150 24,000 TrenchMOS MOSFETs Hazel Grove, Stockport SK7 5BJ

NXP Semiconductors China, Jilin

NXP Semiconductors UK, Manchester

NXP Semiconductors ICN8 Netherlands, Nijmegen 200 40,000+[99]

NXP Semiconductors(former Freescale Semiconductor) CHD-FAB Chandler, Arizona[100]

NXP Semiconductors(former Freescale Semiconductor) ATMC Chandler, Arizona[100]

NXP Semiconductors(former Mullard) Stockport Hazel Grove, Stockport, UK

NXP Semiconductors SSMC Singapore 1.7[41] 2001[41]

Bipolar, Mos, Analog, Digital, NXP Semiconductors Japan[101] Transistors, Diodes

X-Fab France SAS(formerly Altis Semiconductor)(formerly ACL-AMF France, Corbeil-Essonnes 1991, 1964[41] 200 130–350 CMOS IBM)[102]

X-Fab(formerly 1st Silicon)[103][104] Malaysia 2000 200 130–350 30,000

LFoundry (formerly Micron)[105] Italy, Avezzano 1995 200 90–150 40,000

Raytheon Systems Ltd UK, Glenrothes, Scotland 1960 100 CMOS on SiC

AMK8 (second, newer STMicroelectronics Singapore, Ang Mo Kio 1995 200 fab)

AMJ9 (first fab, initially STMicroelectronics owned by SGS Singapore, Ang Mo Kio 1984[106] 150 Microelettronica)

STMicroelectronics Crolles 1 / Crolles 200 France, Crolles 1993 200

STMicroelectronics Crolles2 / Crolles 300 France, Crolles 2003 300 90, 65, 45, 32

STMicroelectronics Tours France, Tours 200

R2 (upgraded in 2001 STMicroelectronics (formerly SGS-ATES) Italy, Agrate Brianza 1963 200 from R1)

STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy, Agrate Brianza 1963 200

STMicroelectronics Catania Italy, Catania 1997 200

STMicroelectronics Rousset France, Rousset 2000 200

SUNY Poly CNSE NanoFab 300 North[107] USA, NY, Albany .175, .050 2004, 2005 300 65, 45, 32, 22

SUNY Poly CNSE NanoFab 200[108] USA, NY, Albany .016 1997 200

SUNY Poly CNSE NanoFab Central[107] USA, NY, Albany .150 2009 300 22

Memory IC, LCD drive IC, Memory Foundry, Fab 90, 70, Integrated Memory Chips, Powerchip Semiconductor Taiwan, Hsinchu 2.24[41] 2002[41] 300 80,000 P1[109][110] 22[111] CMOS Image Sensors, and Power Management IC

Memory IC, LCD drive IC, 90, 70, Integrated Memory Chips, Powerchip Semiconductor Fab P2[110] Taiwan, Hsinchu, Hsinchu Science Park 1.86[41] 2005[41] 300 80,000 22[112] CMOS Image Sensors, and Power Management IC

Memory IC, LCD drive IC, 90, 70, Integrated Memory Chips, Powerchip Semiconductor Fab P3[110] Taiwan, Hsinchu, Hsinchu Science Park 300 20,000 22[113] CMOS Image Sensors, and Power Management IC

ON Semiconductor (formerly Fairchild Semiconductor ) USA, PA, Mountain Top 1960/1997 200 350

ON Semiconductor (formerly Fairchild Semiconductor ) USA, ME, South Portland 1960/1997 200 350

S1 Mega Fab SMIC China, Shanghai 200 350-90 114,000[115] (S1A/S1B/S1C)[114]

SMIC S2 (Fab 8)[114] China, Shanghai 300 45/40-32/28 20,000[115]

SMIC SN1[114] China, Shanghai (plan) 300 70,000[116]

B1 Mega Fab (Fab 4, Fab SMIC China, Beijing 2004 300 180-90/55 50,000[115] 6)[114]

SMIC B2A[114] China, Beijing 3.59[117] 2014 300 45/40-32/28 35,000[115]

SMIC Fab 7[114] China, Tianjin 2004 200 350-90 47,000[115]

SMIC Fab 15[114] China, Shenzhen 2014 200 350-90 50,000[115]

SMIC SZ (Fab 16A/B)[114] China, Shenzhen Planned) 300 40,000[116]

Under SMIC[118] B3 China, Beijing 300 35,000 Construction

Memory Product Winbond Taiwan, Taichung 300 46 Foundry[119]

Taiwan, No. 8, Keya 1st Rd.,Daya Winbond CTSP Site[120][121] Dist.,Central Taiwan Science Park, 300 Taichung City 42881

Winbond[122] Planned 300

MagnaChip F-5[123] South Korea, Cheongju 2005 200 130

ProMOS Fab 4[124][125] Taiwan, Taichung 1.6 300 70

TSI Semiconductors Heilbronn, HNO-Line Germany, Heilbronn 0.125[41] 1993[41] 150 10,000

Roseville fab, M-Line, TD- TSI Semiconductors[126] USA, CA, Roseville 1992, 1985[41] 200 Line, K-Line[127][41]

SK Hynix[128] China, Chongqing

SK Hynix[129] China, Chongqing

South Korea, Cheongju, Under SK Hynix[130][131] NAND Flash Chungcheongbuk-do Construction

Under SK Hynix[131] South Korea, Cheongju NAND Flash Construction

SK Hynix[131] South Korea, Incheon Planned NAND Flash

SK Hynix M8 South Korea, Cheongju 200 Foundry

SK Hynix M10 South Korea, Icheon 300 DRAM

SK Hynix M11 South Korea, Cheongju 300 NAND Flash

SK Hynix M12 South Korea, Cheongju 300 NAND Flash

SK Hynix HC1 China, Wuxi 300 100,000[116] DRAM

SK Hynix HC2 China, Wuxi 300 70,000[116] DRAM

SK Hynix M14 South Korea, Icheon 300 DRAM, NAND Flash

CSMC[132] China, Wuxi 200-300 130-above

Fujitsu Kawasaki Japan, Kawasaki 1966[133]

Mie(original 150, 200, Fujitsu Japan, Mie 1974 installations)[134] 300[135]

Japan, 1500 Tadocho Mizono, Kuwana, Mie (https://maps.google.com/maps?q Foundry, Ultra-low Power ICs, Mie Fujitsu Semiconductor Limited[136][137] Fab B1(at Mie)[138] 2005 300 65, 90 15,000 =1500+Tadocho+Mizono,+Kuwana,+M Embedded Memory, RF ICs ie,+Japan)[139]

Japan, 1500 Tadocho Mizono, Kuwana, Mie (https://maps.google.com/maps?q Foundry, Ultra-low Power ICs, Mie Fujitsu Semconductor Limited[140][137] Fab B2(at Mie)[138] 1(total)[141] 2007, July 300 65, 90 25,000 =1500+Tadocho+Mizono,+Kuwana,+M Embedded Memory, RF ICs[142] ie,+Japan)[139]

Japan, 1500 Tadocho Mizono, Kuwana, Mie (https://maps.google.com/maps?q Mie Fujitsu Semconductor Limited[143][137] 2015 300 40[144] 5,000 Foundry =1500+Tadocho+Mizono,+Kuwana,+M ie,+Japan)[139]

Japan, Saitama, 1224 Oaza-Nakanara, Fujitsu Kumagaya Plant[138] 1974 Kumagaya-shi, 360-0801

Japan, Nagano, 460 Oaza-Koyama, Fujitsu[145] Suzaka Plant Suzaka-shi, 382-8501

Japan, Iwate, 4-2 Nishinemoriyama, Fujitsu Iwate Plant[146][135] Kanegasaki-cho, Isawa-gun, 029-4593

Japan, Fukushima, 3 Kogyo Danchi, Aizu Wakamatsu 150, Aizu Fujitsu Semiconductor[147] Monden-machi, Aizuwakamatsu-shi, 1970[149] Memory, Logic Plant[148] 200[150][151] 965-8502

Hans-Bunte-Strasse Germany, Freiburg, Micronas FREIBURG[152][153] 19 D-79108]

SkyWater Technology (formerly Cypress Semiconductor 65, 90, 130, Minnesota fab USA, MN, Bloomington 1991 fab) (https://www.skywatertechnology.com/) 180, 250, 350

Cypress Semiconductor Fab25 USA, TX, Austin 1994 200 Flash / Logic

ON Semiconductor Gresham[154] USA, OR, Gresham 200 110

ON Semiconductor (formerly AMI Semiconductor) Pocatello[155] USA, ID, Pocatello 200 350

ON Semiconductor Oudenaarde Belgium, Oudenaarde 150 350 4,000

ON Semiconductor ISMF Malaysia, Seremban 150 350 80,000 Discrete

ON Semiconductor (former Sanyo)[156][157] Niigata Japan, Niigata 150 350

ON Semiconductor Roznov Czech Republic, Roznov 150 5000

99 Bald Hill Road, Cranston, Rhode ON Semiconductor Island

Texas Instruments (formerly National Semiconductor) South Portland[158] USA, ME, South Portland .932 1997 350, 250, 180

Under Samsung S3-Line[159] South Korea, Hwaseong 10.2, 16.2(planned)[160][161] 300 20 200,000 DRAM, VNAND construction

Samsung S2-Line[162] USA, TX, Austin 0.260[163] 2011 300 14 62,000 Microprocessors

2005(second Microprocessors, S.LSI, Samsung S1-Line[164] South Korea, Giheung 33 (total) phase), 1983(first 300 14 62,000 LEDs[167] phase)[165][166]

Samsung Pyeongtaek[168][169] South Korea, Pyeongtaek 14.7, 27(total)[170][171][172] 2017, July 6 300 14 450,000[173] V-NAND, DRAM(planned)

Samsung China Samsung China, Shaanxi Province DDR Memory Semiconductor[174]

Samsung Suzhou Samsung Research Center Suzhou Industrial Park, Suzhou, China DDR Memory (SSCR)[164]

Samsung Onyang Complex[174] South Korea, Chungcheongnam-do DDR Memory, System Logic

2014(first phase, second phase is Samsung F1x1[175] China, Xian 2.3[176] 300 20 100,000 VNAND under review)[160]

Samsung Giheung Campus[177] South Korea, Gyeonggi-do, Yongin LEDs

Samsung Giheung[178] South Korea, Gyeonggi-do, Yongin OLEDs

Samsung Chungcheongnamdo[179] South Korea OLEDs

Samsung Hwasung Campus[177] South Korea, Gyeonggi-do, Hwaseong LEDs

Tianjin Samsung LED China, Tianjin, Xiqing, Micro-Electronic Samsung LEDs Co., Ltd.[177] Industrial Park, Weisi Road

Samsung Suzhou LCD China, Jiangsu Province, Suzhou Samsung AMOLEDs[181] (SSL)[180] Industry Park, Fengli Street

Samsung[160] South Korea, Asan 2018 (planned) OLEDs

Samsung A3[182] South Korea, Asan? 135,000 Flexible OLEDs

Under Samsung A5[182] South Korea, Cheonan? 180,000-270,000 AMOLEDs Construction

45,000 (planned, Samsung A4[182] South Korea, Asan? AMOLEDs by the end of 2018)

Samsung A1[182][180] South Korea, Asan 55,000 Rigid OLEDs

Samsung A2[182][180] South Korea, Asan 180,000 Flexible OLEDs

Samsung South Chungcheong site South Korea, South Chungcheong 12.6[183] OLEDs

Planarized BEOL, W and Oxide TowerJazz Fab 1[184] Israel, Migdal Haemek 0.235[41] 1989, 1986[41] 150 1000-350 14,000 CMP, CMOS, CIS, Power, Power Discrete

Cu and Al BEOL, EPI, 193 nm TowerJazz Fab 2[184] Israel, Migdal Haemek 1.226[41] 2003 200 180-130 51,000[41] Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS

Fab 3,[184] Newport TowerJazz USA, CA, Newport Beach 0.165[41] 1967, 1995[41] 200 130–500 25,000[41] Al BEOL, SiGe, EPI Beach[41]

Analog/Mixed- TowerJazz – TPSCo Fab 5,[184] Tonami[185] Japan, Tonami 1994 200 500-130 Signal,Power,Discrete,NVM,CCD

CMOS,CIS,RF,SOI, TowerJazz – TPSCo Fab 7,[184] Uozu[185] Japan, Uozu 1984 300 65. 45 Analog/Mixed-Signal

Analog/Mixed- TowerJazz – TPSCo Fab 6,[184] Arai[185] Japan, Arai 1976 200 130-110 Signal,CIS,NVM,Thick Cu RDL

TowerJazz China, Nanjing[186][187] 200, 300(plan)

Texas Instruments FFAB Germany, Freising 200

Texas Instruments MFAB USA, ME, ? 200

Texas Instruments RFAB USA, TX, Richardson 2009 300

Texas Instruments DMOS6 USA, TX, Dallas 300

Texas Instruments DMOS5 USA, TX, Dallas 200

Texas Instruments DFAB USA, TX, Dallas 1964 150/200

Texas Instruments SFAB USA, TX, Sherman 150

Texas Instruments GFAB UK, Scotland, Greenock 150/200 40,000

Texas Instruments MIHO8 Japan, Miho 200

Texas Instruments Aizu Japan, Aizu 200

Texas Instruments Chengdu (CFAB) China, Chengdu 200

General Motors Components Holdings Fab III USA, IN, Kokomo 125/200 500+

Infineon Technologies Villach Austria, Villach 1970[188] 100/150/200/300 MEMS, SiC, GaN

Infineon Technologies Dresden Germany, Dresden 3[189] 1994/2011[190] 200/300 90

Infineon Technologies Kulim[191] Malaysia, Kulim 2006[192] 200/300 50,000

Infineon Technologies Kulim 2 Malaysia, Kulim 2015 200/300 50,000

Infineon Technologies Regensburg[193] Germany, Regensburg 1959

Infineon Technologies Cegled[194] Hungary, Cegled

Infineon Technologies Cheonan South Korea, Cheonan-si

Infineon Technologies El Segundo United States, CA, El Segundo[195]

Infineon Technologies Batam Batam Indonesia

Infineon Technologies Leominster United States

Infineon Technologies Malacca Malaysia

Infineon Technologies Mesa US

Infineon Technologies Morgan Hill US

Infineon Technologies Morrisville US

Infineon Technologies Neubiberg US

Infineon Technologies Newport UK

Infineon Technologies San Jose US

Infineon Technologies Singapore Singapore

Infineon Technologies Temecula US

Infineon Technologies Tijuana Mexico

Infineon Technologies Warstein Germany

Infineon Technologies Wuxi China

Bosch Germany, Reutlingen 1995[196] 150 ASIC, analog, power

Bosch Germany, Dresden

Bosch WaferFab Germany, Reutlingen 0.708[197] 2010[196] 200 30,000 ASIC, analog, power, MEMS

Analog Devices Limerick Ireland, Limerick 200

Analog Devices Wilmington USA, MA, Wilmington 200/150

Analog Devices (formerly Linear Technology) Hillview USA, CA, Milipitas 150

Analog Devices (formerly Linear Technology) Camas USA, WA, Camas 150

X-Fab Erfurt Germany, Erfurt 1985[41] 200[198] 600–1000[198] 11200–[198]

X-Fab Dresden Germany, Dresden 0.095[41] 1985[41] 200[199] 350–1000[199] 6000–[199]

X-Fab Itzehoe Germany, Itzehoe 200[200] 13000–[200] MEMS

X-Fab Kuching Malaysia, Kuching 1.89[41] 2001[41] 200[201] 130–350[201] 27000–[201]

X-Fab Lubbock USA, TX, Lubbock 0.197[41] 1977[41] 200[202] 600–1000[202] 15000–[202]

Teledyne DALSA HV ASICs, HV CMOS, MEMS, Teledyne DALSA Canada, Bromont, QC 1980 150/200 Semiconductor CCD

Unitec Blue[203] Argentina, Chascomús 1.2[204]

ams[205] FAB B Austria, Unterpremstaetten 200 350

HuahongGrace[206] FAB China, Shanghai 300 90

ASMC[207] FAB 1/2 China, Shanghai 1992, 1997[41] 200 600 78,000[41] BCD, HV

ASMC[207] FAB 3 China, Shanghai 2004[41] 200 250 12,000[41]

Beilling[208] China, Shanghai 150 1200 BiCMOS, CMOS

Diodes Incorporated[209] OFAB UK, Oldham 150

Diodes Incorporated[209] KFAB USA, MO, Lee's Summit

Polar Semiconductor[210] FAB1 USA, MN, Bloomington 150 BCD, HV

Polar Semiconductor[210] FAB2 USA, MN, Bloomington 200 BCD, HV, GMR

Kagoshima Technology Sony[211] Japan, Kagoshima 1973 Bipolar CCD, MOS, MMIC, SXRD Center

Sony[211] Oita Technology Center Japan, Oita 2016 CMOS Image Sensor

Nagasaki Technology MOS LSI, CMOS Image Sensors, Sony[211] Japan, Nagasaki 1987 Center SXRD

Kumamoto Technology CCD Imgage Sensors, H-LCD, Sony[211] Japan, Kumamoto 2001 Center SXRD

Shiroishi Zao Technology Sony[211] Japan, Shiroishi 1969 Semiconductor Lasers Center

Sony[211] Higashiura Japan, Aichi OLED Displays

Sony(formerly Renesas)(formerly NEC Electronics) Yamagata Technology CMOS Image Sensor, Japan, Yamagata 2014 (formerly NEC)[211][212][213] Center eDRAM(former)

Sony Shiroishi Sony Japan, Miyagi Semiconductor Lasers[214] Semiconductor Inc.

Renesas Semiconductor Renesas[215] China, Haidian District, Beijing 100085 (Beijing) Co., Ltd.

Renesas Semiconductor China, No.176, Zhongxin Avenue West, Renesas[215] (Suzhou) Co., Ltd. Suzhou Industrial Park, Suzhou 215021

Renesas Semiconductor Malaysia, Bayan Lepas Free Industrial Renesas[215] (Malaysia) Sdn. Bhd. Zone, 11900 Penang

Renesas Semiconductor Malaysia, Kulim Industrial Estate, Renesas[215] (Kedah) Sdn. Bhd. 09000 Kulim, Kedah

Malaysia, KM 15, Jalan Banting, 42500 Renesas Semiconductor Renesas[215] Telok Panglima Garang, Selangor Darul KL Sdn. Bhd. Ehsan

Renesas Semiconductor Japan, 751, Horiguchi, Hitachinaka-shi, Renesas[215] Manufacturing Co., Ltd. Ibaraki, 312-8504

Renesas-Intersil[215] USA, CA, Milpitas, 1 Murphy Ranch Rd

South Korea, 570, Hyuam-ro, Munsan- LG Innotek[216] Paju LED Epi-wafer, Chip, Package eup, Paju-si, Gyeonggi-do, 10842

Paju Display LG Display[217] South Korea, Paju-si, Gyeonggi-do 6.9[221] 2004 LED, OLED Cluster[218][219][220]

LG Display P9[222][223][224] South Korea, Paju-si, Gyeonggi-do

LG Display E6[225][226][227][228][229] South Korea, Paju-si, Gyeonggi-do

LG Display E2[230][231][232] South Korea, Paju-si, Gyeonggi-do

LG Display E5[233][234][235] South Korea, Gumi

LG Display P10 South Korea, Paju-si, Gyeonggi-do 8.71[236][237][238] 2018(planned) OLED Displays

Macronix[239] Fab 5 300 50,000

Macronix[239] Fab 2 200 48,000

Macronix[239] Fab 1 150 40,000

Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Nuvoton[240] Fab2 Taiwan 150 350-1000 nm 45,000[241] Management, Mask ROM (Flat Cell), Embedded Logic, Non- Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor

Nuvoton Technology Taiwan, No. 4, Creation Rd. III, Hsinchu Nuvoton Corporation Science Park

Mitsumi Electric[242] Semiconductor Works #3 Japan, Atsugi Operation Base 2000

Mitsumi Electric[242] Japan, Atsugi Operation Base 1979

Rohm[243] Shiga Factory Japan 200 150 IGBT, MOSFET, MEMS

Rohm(Lapis Semiconductor)[244] Miyasaki Japan 150 MEMS

Rohm(Lapis Semiconductor)[245] Building No.1 Japan 1961[246] Transistors

Rohm(Lapis Semiconductor)[247] Building No.2 Japan 1962[248] Transistors

Rohm(Lapis Semiconductor)[249] Building No.3 Japan 1962[250] Transistors

Rohm(Lapis Semiconductor)[251] Building No.4 Japan 1969[252] Transistors

Rohm(Lapis Semiconductor)[253] Chichibu Plant Japan 1975[254] DRAM

Rohm(Lapis Semiconductor)[255] VLSI Laboratory No. 1 Japan 1977[256] VLSI

Rohm(Lapis Semiconductor)[257] VLSI Laboratory No. 2 Japan 1983[258]

Rohm(Lapis Semiconductor)[259] VLSI Laboratory No. 3 Japan 1983[260] DRAM

Rohm(Lapis Semiconductor)[261] Oregon Plant US 1990[262]

Rohm(Lapis Semiconductor)[263] Thailand Thailand 1992[264]

Rohm(Lapis Semiconductor)[265] ULSI Laboratory No. 1 Japan 1992[266] 500 DRAM

Rohm(Kionix)[267] Ithaca Ithaca, NY, USA 150 MEMS

Rohm(Kionix)[267] Kyoto Japan, Kyoto 200 MEMS

Fuji Electric[268] Omachi Japan, Nagano Prefecture

Fuji Electric[269] Iyama Japan, Nagano Prefecture

Fuji Electric[270] Hokuriku Japan, Toyama prefecture

Fuji Electric[271] Matsumoto Japan, Nagano prefecture

Murata Manufacturing[272] Nagano[273] Japan 0.100 SAW Filters[274]

Murata Manufacturing[275] Otsuki[276] Japan

Murata Manufacturing[277] Kanazawa Japan 0.111 SAW Filters[278]

Murata Manufacturing(Former Fujifilm)ref name="murata.com">http://www.murata.com/ja- Sendai Japan, Miyagi Prefecture 0.092[280] MEMS[281] jp/group/kanazawamurata/corporate/overview? intcid5=com_xxx_xxx_cmn_nv_xxx[279]

Murata Manufacturing[282] Yamanashi Japan, Yamanashi Prefecture

Murata Manufacturing[283] Yasu Japan, Yasu, Shiga Prefecture

Olympus Corporation[284] Nagano Japan, Nagano Prefecture MEMS[285]

Micron Semiconductor Ltd. (http://www.micronsemiconduc Lancing UK, West Sussex, Lancing Detectors tor.co.uk/)[286]

Superconducting Quantum Processing D-Wave Systems[287] Foundry[288] Units(QPUs)[288]

Power Device Works, Mitsubishi Electric[289] Japan Power Semiconductors Kunamoto Site

Power Device Works, Japan, Kunamoto Prefecture, Fukuoka Power Semiconductors and Mitsubishi Electric[289] Fukuoka Site City[290] sensors[290]

High frequency optical High frequency semiconductor Mitsubishi Electric[291] device manufacturing Japan, Hyogo Prefecture[292] devices(GaAsFET, GaN, plant MMIC)[293]

Power Semiconductors, LED China, Shenzhen, Longgang High-tech SiSemi (http://www.sisemi.com.cn)[294] 130 Drivers, Bipolar Power Industrial Park[295] Transistors, Power MOSFETs

SiSemi (http://www.sisemi.com.cn)[295] 100 Transistors

Xinxin(XMC)[296] F1 China, Wuhan 300 20,000

193, 55, 40, Huali (http://www.hlmc.cn/en/Default.aspx)[297][298] F1 China, Shanghai 300 35,000 Foundry 28[299]

Under Huali (http://www.hlmc.cn/en/Default.aspx)[300] F2 China, Shanghai 300 40,000 Construction

Under Nexchip[301] N1[302] China, Hefei 300 40,000 Construction

Under Nexchip[303] N2[302] China, Hefei 300 40,000 Construction

Under Nexchip[304] N3[302] China, Hefei 300 40,000 Construction

Under Nexchip[305] N4[302] China, Hefei 300 40,000 Construction

Jinhua[306] China, Jinjiang 5.65 2018 300 DRAM[307]

Under Jinhua[308][309] F2 China, Quanzhou 300 60,000 Construction

Under United Chip[310] Fab 12x China, Xiamen 300 50,000 Construction

Under Uni Group[311] SZ China, Shenzhen 300 50,000 Construction

Under Xinxin[312] F2 China, Wuhan 300 200,000 Construction

Under Decoma[313] F2 China, Huaian 300 20,000 Construction

Under Wandai[314] CQ China, Chongqing 300 20,000 Construction

Compound Semiconductors, Cree Inc.[315] Durham USA, NC, Durham LEDs

Cree Inc.[316] Research Triangle Park USA, NC GaN HEMT RF ICs

Renesas(formerly NEC Electronics)(formerly NEC) Roseville[317][318] USA, CA, Roseville 1.2[319] 2002, April 200 RAM, SoCs, Multimedia Chips

Under Denso Japan, Iwate Prefecture, Kanegasaki- construction, Semiconductor wafers and Denso (Former Fujitsu)[320] 0.088 Iwate[321][322][323] cho 2019, Sensors(since June 2017) May(planned)

Rigetti Computing Fab-1[324][325][326] USA, CA, Fremont 130 Quantum Processors

IR Detectors, Thermal Imaging Flir Systems USA, CA, Santa Barbara[327] 150 Sensors

Rogue Valley Microdevices USA, OR, Medford 2003 150 MEMS foundry

Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Japan, Saitama Prefecture, Fujimino 4000, 400, Speed Complementary Bipolar, New Japan Radio (http://www.njr.com/) Kawagoe Works 1959[330] 100, 150 City[328][329] 350 Analog CMOS+HV, SAW Filters[331]

Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, Saga Electronics (http:// 4000, 400, 40V Hi Speed Complementary New Japan Radio (http://www.njr.com/) Japan, Saga Prefecture 100, 150 www.sagaelec.co.jp/en)[332] 350[333] Bipolar, Analog CMOS+HV, SAW Filters[331]

NJR FUKUOKA (http://ww Japan, Fukuoka Prefecture, Fukuoka Bipolar, Analog ICs, MOSFETs New Japan Radio (http://www.njr.com/) 2003[335] 100, 150 w.njrf.co.jp/) City[334] LSI, BiCMOS ICs

New Japan Radio (http://www.njr.com/) Japan, Nagano, Nagano City[336]

New Japan Radio (http://www.njr.com/) Japan, Nagano, Ueda City[337]

18,750(225,000 per ABB[338] Lenzburg Switzerland, Lenzburg 0.140 2010(2nd Phase) High power Semiconductors year)

Noel Technologies (http://www.noeltech.com/)[339] 450-51[340][339] 500-250[341]

Skyworks Solutions[342] USA, CA Compound Semiconductors

Skyworks Solutions[342] Japan, Osaka SAW, TC-SAW Filters

Skyworks Solutions[342] USA, Woburn MA RF/cellular components (SiGe)

Skyworks Solutions[342] Japan, Kadoma SAW, TC-SAW Filters

Skyworks Solutions[342] Singapore, Bedok South Road SAW, TC-SAW Filters

Seiko Instruments Inc. (http://www.sii.co.jp/en/)[343] China, Shanghai

Seiko Instruments Inc. (http://www.sii.co.jp/en/)[343] Japan, Akita

Seiko Instruments Inc. (http://www.sii.co.jp/en/)[343] Japan, Takatsuka

Lite-On Optoelectronics[344] China, Tianjin

Lite-On Optoelectronics[344] Thailand, Bangkok

Lite-On Optoelectronics[344] China, Jiangsu

Lite-On Semiconductor[345] Keelung Plant Taiwan, Keelung 1990 100 Thystors, DIscrete

Lite-On Semiconductor[345] Hsinchu Plant Taiwan, Hsinchu 2005 Bipolar BCD, CMOS

Lite-On Semiconductor[345] Lite-On Semi(Wuxi) China, Jiangsu 2004 100 Discrete

Lite-On Semiconductor[345] Wuxi WMEC Plant China, Jiangsu 2005 Discrete, Power, Optical ICs

Lite-On Semiconductor[345] Shanghai (SSEC) Plant China, Shanghai 1993 76 Fab, Assembly

Creative Sensor Inc. (http://www.csi-sensor.com.tw/eng/de NanChang Creative China, Jiangxi 2007 Image Sensors fault.htm)[346][347] Sensor

Creative Sensor Inc. (http://www.csi-sensor.com.tw/eng/de Wuxi Creative Sensor China, JiangSu 2002 fault.htm)[346]

Creative Sensor Inc. (http://www.csi-sensor.com.tw/eng/de Wuxi Creative Sensor Taiwan, Taipei City 1998 fault.htm)[346]

Visera Technologies (http://www.viseratech.com/index.htm Taiwan, Hsinchu Science-based Headquarters Phase I 2007, September CMOS Image Sensors l)[348] Industrial Park

Kodenshi AUK Group[349] Silicon FAB Line

Kodenshi AUK Group[349] Compound FAB Line

Shindengen Electric Manufacturing[350] Philippines, Laguna

Shindengen Electric Manufacturing[350] Thailand, Lumphun

ABB[338] Czech Republic

Philips[351] Netherlands, Eindhoven 200,150 30,000 R&D, MEMS

nanoPHAB (http://www.nanophab.com/) Netherlands, Eindhoven 50-100 10-50 2-10 MEMS

Epistar Fab F1[352] Taiwan, Longtan Science Park LEDs

Epistar Fab A1[352] Taiwan, Hsinchu Science Park LEDs

Epistar Fab N2[352] Taiwan, Hsinchu Science Park LEDs

Epistar Fab N8[352] Taiwan, Hsinchu Science Park LEDs

Epistar Fab N1[352] Taiwan, Hsinchu Science Park LEDs

Epistar Fab N3[352] Taiwan, Hsinchu Science Park LEDs

Epistar Fab N6[352] Taiwan, Chunan Science Park LEDs

Epistar Fab N9[352] Taiwan, Chunan Science Park LEDs

Epistar Fab H1[352] Taiwan, Central Taiwan Science Park LEDs

Epistar Fab S1[352] Taiwan, Tainan Science Park LEDs

Epistar Fab S3[352] Taiwan, Tainan Science Park LEDs

YOKOHAMA Nichia TECHNOLOGY Japan, KANAGAWA LEDs CENTER[353]

SUWA TECHNOLOGY Nichia Japan, NAGANO LEDs CENTER[353]

San'an Optoelectronics (http://www.sanan-e.com/en/about Tianjin San’an China, Tianjin LEDs .html) Optoelectronics Co., Ltd.

Xiamen San’an San'an Optoelectronics (http://www.sanan-e.com/en/about Optoelectronics China LEDs .html) Technology Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Xiamen San’an China ICs .html) Integrated Circuit

San'an Optoelectronics (http://www.sanan-e.com/en/about Xiamen San’an China LEDs .html) Optoelectronics Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Fujian Jing’an China LEDs .html) Optoelectronics Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Wuhu Anrui China LEDs .html) Optoelectronics Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Anrui San'an China LEDs .html) Optoelectronics Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Anrui San'an Technology China LEDs .html) Co., Ltd.

San'an Optoelectronics (http://www.sanan-e.com/en/about Luminus Summary US LEDs .html)

Lextar (http://www.lextar.com/?sn=245&lang=en-US) T01 Taiwan, Hsinchu Science Park LEDs

Everlight (https://everlightamericas.com/content/4/Corpor Yuan-Li Plant Taiwan, Miao-Li LEDs ate-Profile)

Everlight (https://everlightamericas.com/content/4/Corpor Pan-Yu Plant China LEDs ate-Profile)

Everlight (https://everlightamericas.com/content/4/Corpor Tu-Cheng Plant Taiwan, Taipei Country LEDs ate-Profile)

2017, 2020(Second Osram(Osram Opto Semiconductors) Malaysia, Kulim, Kulim Hi-Tech Park 0.350, 1.18[354] 150 LEDs Phase, Planned)[355][356]

Osram(Osram Opto Semiconductors) Malaysia, Penang[357][358] 2009 100 LEDs

2003, Osram(Osram Opto Semiconductors) Germany, Regensburg[359] 2005(Second LEDs Phase)[360]

eNVM, RF, Mixed Signal, Logic, HHGrace (http://www.huahonggrace.com/html/business_o China, Zhangjiang 200 1000-90 53,000 Power Management, Power ver.php) Discrete

eNVM, RF, Mixed Signal, Logic, HHGrace (http://www.huahonggrace.com/html/business_o China, Jinqiao 200 1000-90 53,000 Power Management, Power ver.php) Discrete

eNVM, RF, Mixed Signal, Logic, HHGrace (http://www.huahonggrace.com/html/business_o China, Shanghai 200 1000-90 53,000 Power Management, Power ver.php) Discrete

CRMicro (http://www.csmc.com.cn/home.aspx)(formerly HV Analog, MEMS, Power, Fab 1 1998[41] 150[361] 60,000[41] CSMC) Analog, Foundry

CRMicro (http://www.csmc.com.cn/home.aspx)(formerly Fab 2 2008[41] 200[361] 130 30,000[41] HV Analog, Foundry CSMC)

CRMicro (http://www.csmc.com.cn/home.aspx)(formerly Fab 3 1995[41] 200[361] 130 20,000[41] CSMC)

CRMicro (http://www.csmc.com.cn/home.aspx)(formerly Fab 5 2005[41] 30,000[41] CSMC)

Diodes Incorporated (Formerly BCD Semi (https://web.arc hive.org/web/20060430031746/http://www.bcdsemi.com/s China 150 4000-1000 ervice/service.asp))[362]

HeJian (http://www.hjtc.com.cn/English/aboutHJ/aboutUs.a China 1.2 2003, May 200 4000-1000 60,000 Foundry sp)

AKM (http://www.akm.com/akm/en/aboutus/network/) FAB1 Japan, Nobeoka Sensors (AKM Semiconductor, Inc.)

AKM (http://www.akm.com/akm/en/aboutus/network/) FAB2 Japan, Nobeoka (AKM Semiconductor, Inc.)

AKM (http://www.akm.com/akm/en/aboutus/network/) FAB3 Japan, Fuji Sensors (AKM Semiconductor, Inc.)

AKM (http://www.akm.com/akm/en/aboutus/network/) FAB FP Japan, Hyuga (AKM Semiconductor, Inc.)

AKM (http://www.akm.com/akm/en/aboutus/network/) FAB5 Japan, Ishinomaki LSI (AKM Semiconductor, Inc.)

Broadcom (https://www.broadcom.com/) (Broadcom USA, CO, Fort Collins[363] Limited)

Pyongyang Semiconductor Factory 111 Factory North Korea, Pyongyang 1980s 3000[364]

OLEDs, Sensors, DRAM, SRAM, Kim Il-sung Fab[365] Il-sung North Korea, Pyongyang 1965s 76 14/22[366] 25000-55000 CMOS, Photodiodes, IGBT, MOSFET, MEMS

NEC[367] 100, 130, 150 SRAM, DRAM

NEC[368] Japan DRAM

NEWPORT WAFER FAB[369] UK, Newport 100, 150 1200, 800

NIPPON PRECISION CIRCUITS[370] Digital

NKK JFE Holdings[371] 200 6000

NMB SEMICONDUCTOR[372] DRAM

Semiconductor Lasers, NORTHERN TELECOM EUROPE[373] Photodiodes

NORTHERN TELECOM SEMICONDUCTOR[374] 100, 150 NMOS, CMOS

100, 150, 130, Oki Electric Industry[375] Japan, Tokyo, Minato-ku 1961 7,200 Bipolar, Mask ROM 76

100, 150, 130, Oki Electric Industry[376] Miyazaki Oki Electric Co 1981 3000 7,200 Bipolar, Mask ROM, DRAM[377] 76

100, 150, 130, Oki Electric Industry[378] Miyagi Facility 1988[379] 7,200 Bipolar, Mask ROM 76

100, 150, 130, Oki Electric Industry[380] Hachioji Facility 7,200 Bipolar, Mask ROM 76

Oki Electric Industry[381] 150 180-150 SOCs, LSI, Logic, Memory

Optek Technology[382] 1968 100, 150 GaAs, LEDs

Orbit Semiconductor[383] 100 CCD, CMOS

OLEDWorks[384] United States, NY, Rochester OLED Panels

OLEDWorks[384] Germany, Aachen OLED Panels

APT Electronics GUANGZHOU[41] 2006[41]

Aqualite Wuhan[41] 2008[41]

Arima Optoelectronics Hsinchu[41] 1999[41]

Aqualite GUANGZHOU[41] 2006[41]

AWSC Tainan[41] 1999[41]

BAE Systems Nashua[41] 1985[41]

Entrepix Tempe[41] 2003[41]

CSTG Halmiton[41] 2003[41]

1992, 1990, Episil Semiconductor Hsinchu[41] 1988[41]

GCS Torrance[41] 1999[41]

Medtronic Tempe[41] 1973[41]

MIMOS Semiconductor Kuala Lumpur[41] 0.006, 0.135 1997, 2002[41]

Novati Austin[41] 0.065 1989[41]

1992, 1990, Episil Semiconductor Hsinchu[41] 1988[41]

Panjit Kaohsiung[41] 0.1 2003[41]

Photonix Glasgow[41] 0.011 2000[41]

Plessey Swindon[41]

SensFab Singapore[41] 1995[41]

Silanna Sydney Olympic Park[41] 0.030 1965,1989[41]

Silex Microsystems Jarfalla[41] 0.009, 0.032 2003, 2009[41]

Technologies and Devices International Silver Springs[41] 2002[41]

Win Semiconductor Taoyuan[41] 0.050, 0.178 2000, 2009[41]

Xiamen Jaysun Semiconductor Manufacturing Fab 101 Xiamen[41] 0.035 2011[41]

Xiyue Electronics Technology Fab 1 Xian[41] 0.096 2007[41]

XMC Fab 1 Wuhan[41] 1.9 2008[41] 20,000[385]

DongbuHiTek Fab 1 Bucheon[41] 1997[41]

DongbuHiTek Fab 2 Eumsung-Kun[41] 2001[41]

DongbuHiTek Fab 2 Module 2 Eumsung-Kun[41]

XMC[386] XMC Fab 2018[41] 200,000

Win Semiconductor Fab A[387] Taiwan, Taoyuan City 150[388] 2000-10

Win Semiconductor Fab B[387] Taiwan, Taoyuan City 150[388] 2000-10

Integrated Device Technology USA, Oregon, Hillsboro 1997 200 140-100[389]

Innovative Ion Implant UK 51-300[390]

Innovative Ion Implant France 51-300[390]

Olympus Japan MEMS[391]

Opto Diode US[392]

Nanosystem Fabrication Facility Hong Kong[393]

Data General California, Sunnyvale[394]

HuaLei Optoelectronic China LEDs[395]

Tsinghua Unigroup[307] China, Nanjing 30 2018 300 3D NAND Flash

Tsinghua Unigroup[307] China, Chengdu 28 Planned 300 500,000 Foundry

Sino King Technology[307] China, Hefei 2017 DRAM

YMTC[307] China, Wuhan 24 2019 300,000 3D NAND

United Monolithic Semiconductors[396] Germany, Ulm Foundry

United Monolithic Semiconductors[396] France, Yvette Foundry

Australia, Sydney Peregrine Semiconductor [397] CMOS

Wisechip Semiconductor Taiwan, Hsinchu[398] 2008 OLED

Seagate US, MINNEAPOLIS[399]

Seagate Northern Ireland[400][401][402][403]

Infinera US, California[404][405]

Soraa Inc US, California[406][407]

Soraa Laser Diode[408][409]

Western Digital[410][411]

Tsuruoka TDK 125[414] Higashi[412][413]

TDK Japan, Saku[415]

Tronics Texas[416]

Taiyo Yuden Japan, Nagano SAW Devices[417]

Taiyo Yuden Japan, Ome SAW Devices[418]

Kyocera SAW Devices[419]

IXYS Germany IGBT[420]

IXYS England[421]

IXYS US, MA[422]

IXYS US, California[423]

Mirrorcle Technologies US, California[424]

MRAM, RRAM, MEMS, IPD, TMR, Crocus Nano Electronics CNE Moscow, Russia 2015 300 65 4000 GMR Sensors

Panasonic[425] Brazil 0.9

Optotech[426] Taiwan, Hsinchu LEDs

ProMos Technologies[427]

Sharp Corporation Fukuyama[428]

Canon Inc. Oita[429]

Canon Inc. Ayase[430]

Japan Semiconductor [431] Iwate

Japan Semiconductor[432] Oita

TCL[433] China, Shenzhen 90,000 OLEDs

TCL[434] China OLEDs

BOE[435] Ordos China OLEDs

BOE[436] Chengdu[437] China OLEDs

BOE[438] Sichuan[439] China OLEDs

BOE[440] Hefei[441] China OLEDs

(NOTE: Some Fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered of bad luck.)See Tetraphobia

Closed

List of old fabs that closed:

Plant cost (in US$ Started Wafer size Process technology Wafer production Ended Company Plant name Plant location Technology/products billions) production (in mm) node (in nm) capacity/month production

EI Niš Ei Poluprovodnici Serbia, Niš 1962 100 2000

Fairchild Semiconductor (formerly National West Jordan USA, UT, West Jordan 1977 150 2015[442] Semiconductor)

Scotland, West Lothian, NEC Livingston[443] April 2001 Livingston

Freescale Semiconductor Toulouse Fab[444] France, Toulouse 1969 150 650 2012[445]

Freescale Semiconductor Sendai Fab[446] Japan, Sendai 1987 150 500 ?

Hynix E-4 USA, OR, Eugene 1.3 2007 200 30,000 2008[447]

Microprocessors, Chipsets, Intel Fab 8[15] Israel, Jerusalem 1985 150 2007 Microcontrollers[16]

Intel Fab 17[5][6] USA, MA, Hudson 1998 200 130 Chipsets and other[7] 2014

LFoundry (formerly Renesas Germany, Landshut ? 200 2011 Electronics)[448]

LFoundry (formerly Atmel)[449] France, Rousset ? 200 25.000[450] 2014

MOS Technology, 1969 1976 Commodore Semiconductor, USA, PA, Audubon 1976 1000 1992[451] GMT Microelectronics 1995 2001

Texas Instruments HFAB USA, TX, Houston 1967 150 2013[452]

Texas Instruments (formerly National Arlington USA, TX, Arlington 1985 150 2010 Semiconductor)

TowerJazz Fab 4[184] Japan, Nishiwaki City 0.450[41] 1992[41] 60,000[41] ?

Qimonda Richmond[453] USA, VA, Richmond 300 January, 2009

Fab 1(at Yokkaichi September, Toshiba Japan, Yokkaichi 1992 Operations)[454] 2001

TSMC Fab 1[61] Taiwan, Hsinchu 1987 20,000 March 9, 2001

Unknown(fortune 500 company) USA, East Coast[455] 150 1,600 MEMS 2016

Integrated Device Technology USA, California, Salinas 1985 150 350-800[389] 2002

Hazel Grove, Stockport, NXP Semiconductors(former Mullard) Southampton UK

Soviet Union Jupiter Ukraine, Kiev, Pripiat 1980 1996

See also

Semiconductor device fabrication

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External links

The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers (http://gsaglobal.org/resources/ic_foundry_almanac/docs/03_Foundry_Service_Providers.pdf)| // IC Insights, Global Semiconductor Alliance, 2009 Memory and Foundry Account For More Than Half of Worldwide IC Capacity (http://www.icinsights.com/news/bulletins/Memory-And-Foundry-Account-For-More-Than-Half-Of-Worldwide-IC-Capacity/) // IC Insights, Global Semiconductor Alliance, 2013-07-09 SEMI World Fab Forecast 2013 (http://www.semi.org/en/sites/semi.org/files/docs/SEMI_World_Fab_Forecast_SAMPLE_2013_2.xlsx) // SEMI, 2013

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This page was last edited on 15 June 2018, at 18:22 (UTC).

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