Arxiv:1603.00425V2 [Cond-Mat.Supr-Con] 2 Jun 2016 Solved Photoemission Also Shows Interesting Correlations Nbse and an Increase in 2H-Tas [6–10]

Total Page:16

File Type:pdf, Size:1020Kb

Arxiv:1603.00425V2 [Cond-Mat.Supr-Con] 2 Jun 2016 Solved Photoemission Also Shows Interesting Correlations Nbse and an Increase in 2H-Tas [6–10] Strong enhancement of superconductivity at high pressures within the charge-density-wave states of 2H-TaS2 and 2H-TaSe2 D. C. Freitas,1, 2, 3 P. Rodi`ere,1, 2 M. R. Osorio,4 E. Navarro-Moratalla,5 N. M. Nemes,6 V. G. Tissen,7, 8 L. Cario,9 E. Coronado,5 M. Garc´ıa-Hern´andez,10, 11 S. Vieira,4, 11 M. N´u~nez-Regueiro,1, 2, ∗ and H. Suderow4, 11 1Univ. Grenoble Alpes, Inst. NEEL, F-38000 Grenoble, France 2CNRS, Inst NEEL, F-38000 Grenoble, France 3Centro Brasileiro de Pesquisas F´ısicas, Rua Dr. Xavier Sigaud, 150, Urca, Rio de Janeiro - RJ, Brasil 4Laboratorio de Bajas Temperaturas, Departamento de F´ısica de la Materia Condensada, Instituto de Ciencia de Materiales Nicol´asCabrera, Condensed Matter Physics Center (IFIMAC), Universidad Aut´onomade Madrid, E-28049 Madrid, Spain 5Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedr´atico Jos´eBeltr´an2, 46980 Paterna, Spain 6GFMC, Departamento de F´ısica Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, E-28040 Madrid, Spain 7Institute of Solid State Physics, Chernogolovka, 142432 Moscow Region, Russia 8Laboratorio de Bajas Temperaturas, Departamento de F´ısica de la Materia Condensada, Instituto de Ciencia de Materiales Nicol´asCabrera, Facultad de Ciencias Universidad Aut´onomade Madrid, E-28049 Madrid, Spain 9Institut des Mat´eriauxJean Rouxel (IMN), Universit´ede Nantes, CNRS, 2 rue de la Houssini`ere, BP 32229, 44322 Nantes Cedex 03, France 10Instituto de Ciencia de Materiales de Madrid-CSIC, Cantoblanco E-28049 Madrid, Spain 11Unidad Asociada de Bajas Temperaturas y Altos Campos Magn´eticos, UAM, CSIC, Madrid, Spain (Dated: June 3, 2016) We present measurements of the superconducting and charge density wave critical temperatures (Tc and TCDW ) as a function of pressure in the transition metal dichalchogenides 2H-TaSe2 and 2H-TaS2. Resistance and susceptibility measurements show that Tc increases from temperatures below 1 K up to 8:5 K at 9:5 GPa in 2H-TaS2 and 8:2 K at 23 GPa in 2H-TaSe2. We observe a kink in the pressure dependence of TCDW at about 4 GPa that we attribute to the lock-in transition from incommensurate CDW to commensurate CDW. Above this pressure, the commensurate TCDW slowly decreases coexisting with superconductivity within our full pressure range. PACS numbers: 74.45.Lr,74.25.Dw,74.70Xa INTRODUCTION sions pointed out that there was a mutually exclusive interaction. Indeed, Tc decreases and TCDW increases when the the lattice parameter a/c ratio decreases as The near absence of reports on superconductivity in we pass from 2H-NbS (T = 6 K and T = 0 K graphene and related single layer systems is notorious, 2 c CDW ), 2H-NbSe (T = 7:2 K and T = 30 K), 2H- given the large efforts devoted presently to these mate- 2 c CDW TaS (T = 1 K and T = 80 K) and 2H-TaSe rials. Only recently have superconducting signatures in 2 c CDW 2 (T = 0:1 K and T = 120 K). On application of doped graphene sheets[1, 2] and Ising superconductivity c CDW pressure in 2H-NbSe , the CDW disappears above 5 GPa in trigonal prismatic monolayer MoS [3, 5] and NbSe 2 2 2 and T increases slightly up to 8.5 K at 10 GPa[12, 18], [4] been observed. Few-layer devices have been also c pointing out an exclusive interaction too. Measurements made of transition metal dichalcogenides (2H-TX , with 2 of the superconducting density of states and of vortex T=Nb,Ta and X=S,Se), which crystallize in a hexagonal core shapes in 2H-NbSe show that the superconducting arrangement of transition metal atoms separated by the 2 gap of 2H-NbSe is strongly shaped by the CDW and it chalcogen. Single molecular layers, formed by hexago- 2 has been argued that the CDW decreases the gap value nal T-X groups, show opposing tendencies with decreas- along certain directions in real space[21]. Angular re- ing thickness|a reduction of superconducting Tc in 2H- arXiv:1603.00425v2 [cond-mat.supr-con] 2 Jun 2016 solved photoemission also shows interesting correlations NbSe and an increase in 2H-TaS [6{10]. 2 2 between superconducting and CDW Fermi surface fea- Layered materials are generally very sensitive to mod- tures. If these are cooperative or exclusive is, however, ifications of their lattice parameters[11{19]. To under- not clearly established when taking different photoemis- stand their superconducting Tc, we need to address the sion measurements into account[22, 23]. Thus, most ex- interplay between superconductivity and the charge den- periments point out that, particularly from data in 2H- sity wave (CDW) and how this interplay evolves when NbSe2, the interaction seems to be of competing nature. varying the lattice parameters. The mutual interaction between superconductivity and It has been argued [11, 20] that superconductivity and magnetism is debated in the cuprate compounds, where CDW strongly interact in the 2H-TX2. Initial discus- 2 cooperative interactions have been discussed[24]. Here lock-in amplifier[18]. For the resistance we use a Bridg- we find that, unexpectedly, CDW and superconductivity man pressure cell with steatite as the pressure transmit- coexist in a large part of the phase diagram when apply- ting medium [38]. Platinum wires were passed through ing pressure to the Ta based 2H-TX2, namely 2H-TaS2 the pyrophillite gasket. Samples are cut into pieces of 3 and 2H-TaSe2. approximate size of ∼100×400×60×µm and contacted In the compounds with largest interlayer separation to the platinum leads in the pressure cell. The temper- and highest CDW transition temperatures, 2H-TaS2 and ature was controlled by a motor introducing gradually 2H-TaSe2, the CDW and superconducting phase dia- into the cryostat the cell attached to a cane.The elec- grams have been studied up to 4 GPa. The supercon- trical resistance measurements were performed using a ducting Tc increases in both compounds, up to about 2.5 Keithley 220 source and a Keithley 2182 nanovoltmeter. K in 2H-TaS2 and 0.4 K in 2H-TaSe2[25]. In 2H-TaS2, Two samples were measured simultaneously giving the the resistivity vs temperature as a function of pressure same results. We could not appropriately determine the shows that the CDW appearing below 80 K at ambi- volume of samples nor the geometrical factor. Thus, we ent pressure decreases down to about 66 K at 3.5 GPa provide relative temperature variations of susceptibility in 2H-TaS2[11, 26, 27]. In 2H-TaSe2, the ambient pres- and resistance. sure phase diagram consists of an incommensurate CDW Fig. 1 displays the susceptibility and resistance ver- (ICDW) appearing at 120K and a lock-in transition at sus temperature curves obtained at different pressures 90K to a commensurate CDW (CCDW). There is a reen- at low temperatures. We determine Tc from the onset trant lock-in transition with pressure[29]. The incom- of the superconducting resistive and magnetic transition mensurate CDW occupies the whole temperature range curves, defined as the intersection of two tangents, one to above 2 GPa, but, above 4 GPa, it locks to the lattice the flat portion of the curve above and the second to the and becomes again commensurate [29{34]. Here we study steepest variation in the signal below the superconduct- the effect of pressure up to 25GPa on superconductivity ing transition. In all cases we obtain sharp transitions, and charge density waves in 2H-TaS2 and 2H-TaSe2 . We providing an unambiguous determination of the super- find that the CDW does not disappear up to the highest conducting Tc. Sometimes, we observe in the resistance pressures studied and that Tc increases considerably up measurements a small non-zero residual value in the su- to close to 9 K in both compounds. perconducting phase, which we attribute to two contacts touching each other at one side of the sample in the pres- sure cell. This does not influence the determination of EXPERIMENTAL Tc. To make a comparative study of both TCDW and RESULTS Tc under pressure we measure the magnetic suscepti- bility and the resistivity of small samples. The sam- ples were grown using vapour transport and the politype The evolution of TCDW under pressure was deter- purity of the 2H phase was checked by powder X-ray mined by calculating the temperature derivative of the diffraction[26]. To this end, samples of synthesized crys- resistance, dR(T )=dT , from the measured resistance vs tals were ground and loaded inside a capillary ready for temperature curves . In Fig. 2, we show dR(T )=dT for powder X-Ray diffraction (performed in ambient condi- different pressures. The development of the CDW pro- tions). Indexation of the reflections of the powder pat- duces a gap on the Fermi surface that causes a sudden tern by assuming a hexagonal symmetry allowed for the increase in the resistance which induces a downward peak identification of a single phase with the following unit in dR(T )=dT [39]. Their position in the curves are sig- cell parameters: a = b = 3.3137(2) A,˚ c = 12.076(1) nalled on Fig 2 by small arrows. The obtained pressure Afor˚ 2H-TaS2 and a = b = 3.43910(5) A,˚ c = 12.7067(2) dependence of Tc and TCDW is shown in Fig. 3. Afor˚ 2H-TaSe2. The Le Bail refinement of the room tem- In 2H-TaSe2, we find that pressure provokes an in- perature powder pattern is in agreement with that de- crease of Tc, with a slope of 0:58 K/GPa, between 2 scribed for the 2H phases of TaS2 and TaSe2 crystals.
Recommended publications
  • Single Crystalline 2D Layers with Linear Magnetoresistance and High C
    pubs.acs.org/cm Article Thickness-Controlled Synthesis of CoX2 (X = S, Se, and Te) Single Crystalline 2D Layers with Linear Magnetoresistance and High Conductivity Xingguo Wang, Zhang Zhou, Peng Zhang, Shuqing Zhang, Yang Ma, Weiwei Yang, Hao Wang, Bixuan Li, Lingjia Meng, Huaning Jiang, Shiqiang Cui, Pengbo Zhai, Jing Xiao, Wei Liu, Xiaolong Zou, Lihong Bao,* and Yongji Gong* Cite This: Chem. Mater. 2020, 32, 2321−2329 Read Online ACCESS Metrics & More Article Recommendations *sı Supporting Information ABSTRACT: Two-dimensional (2D) materials especially transition metal dichalcogenides (TMDs) have drawn intensive interest owing to their plentiful properties. Some TMDs with magnetic elements (Fe, Co, Ni, etc.) are reported to be magnetic theoretically and experimentally, which undoubtedly provide a promising platform to design functional devices and study physical mechanisms. Nevertheless, plenty of theoretical TMDs remain unrealized experimentally. In addition, the governable synthesis of these kinds of TMDs with desired thickness and high crystallinity poses a tricky challenge. Here, we report a controlled preparation of CoX2 (X = S, Se, and Te) nanosheets through chemical vapor deposition. The thickness, lateral scale, and shape of the crystals show great dependence on temperature, and the thickness can be controlled from a monolayer to tens of nanometers. Magneto-transport characterization and density function theory simulation indicate that CoSe2 and CoTe2 are metallic. In addition, unsaturated and linear magnetoresistance have been × 6 × 6 observed even up to 9 T. The conductivity of CoSe2 and CoTe2 can reach 5 10 and 1.8 10 S/m, respectively, which is pretty high and even comparable with silver. These cobalt-based TMDs show great potential to work as 2D conductors and also provide a promising platform for investigating their magnetic properties.
    [Show full text]
  • Polytypism, Polymorphism, and Superconductivity in Tase2−Xtex
    Polytypism, polymorphism, and superconductivity in TaSe2−xTex Huixia Luoa,1, Weiwei Xiea, Jing Taob, Hiroyuki Inouec, András Gyenisc, Jason W. Krizana, Ali Yazdanic, Yimei Zhub, and Robert Joseph Cavaa,1 aDepartment of Chemistry and cJoseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ 08544; and bDepartment of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973 Contributed by Robert Joseph Cava, February 9, 2015 (sent for review January 14, 2015; reviewed by J. Paul Attfield and Maw-Kuen Wu) Polymorphism in materials often leads to significantly different 3R form (20–22). The 3R form can be synthesized, but it is not the physical properties—the rutile and anatase polymorphs of TiO2 are stable variant (the 2H form is) and so has been the subject of little a prime example. Polytypism is a special type of polymorphism, study. In one of the other polymorphs, the 1T (T: trigonal) type, occurring in layered materials when the geometry of a repeating Ta is found in octahedral coordination in the Se-Ta-Se layers and structural layer is maintained but the layer-stacking sequence of the layer stacking along the c axis of the trigonal cell such that the the overall crystal structure can be varied; SiC is an example of structure repeats after only one layer (23) (Fig. 1A). Again, the 1T a material with many polytypes. Although polymorphs can have form has not been the subject of much study. Here we show that radically different physical properties, it is much rarer for polytyp- the 3R and 1T polymorphs are both quite stable in the TaSe2−xTex ism to impact physical properties in a dramatic fashion.
    [Show full text]
  • The Relations Between Van Der Waals and Covalent Forces in Layered Crystals
    This document is downloaded from DR‑NTU (https://dr.ntu.edu.sg) Nanyang Technological University, Singapore. The relations between Van Der Waals and covalent forces in layered crystals Chaturvedi, Apoorva 2017 Chaturvedi, A. (2017). The relations between Van Der Waals and covalent forces in layered crystals. Doctoral thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/69485 https://doi.org/10.32657/10356/69485 Downloaded on 10 Oct 2021 01:39:43 SGT THE RELATIONS BETWEEN VAN DER WAALS AND COVALENT FORCES IN LAYERED CRYSTALS CHATURVEDI APOORVA SCHOOL OF MATERIALS SCIENCE AND ENGINEERING 2016 THE RELATIONS BETWEEN VAN DER WAALS AND COVALENT FORCES IN LAYERED CRYSTALS CHATURVEDI APOORVA SCHOOL OF MATERIALS SCIENCE AND ENGINEERING A thesis submitted to the Nanyang Technological University in partial fulfilment of the requirement for the degree of Doctor of Philosophy 2016 Statement of Originality I hereby certify that the work embodied in this thesis is the result of original research and has not been submitted for a higher degree to any other University or Institution. 5th August 2016 . Date (CHATURVEDI APOORVA) Abstract Abstract With the advent of graphene that propels renewed interest in low-dimensional layered structures, it is only prudent for researchers’ world over to develop a deep insight into such systems with an eye for their unique “game-changing” properties. An absence of energy band gap in pristine graphene makes it unsuited for logic electronics applications. This led academia to turn their attention towards structurally similar semiconducting counterparts of graphene, layered transition metal dichalcogenides (LTMDs). Prominent in them, MoS2, WSe2 shows tuning of physical properties including band gap with reduced thickness and even an indirect to direct band gap transition when reduced to monolayer.
    [Show full text]
  • The Commensurate–Incommensurate Charge-Density-Wave Transition
    R. Samnakay, D. Wickramaratne, T. R. Pope, R. K. Lake, T. T. Salguero and A.A. Balandin (2014) The Commensurate–Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe2 Thin Films R. Samnakay1, 2, D. Wickramaratne 3, T. R. Pope 4, R. K. Lake 3, T. T. Salguero4 and A.A. Balandin1, 2, # 1Nano-Device Laboratory (NDL), Department of Electrical and Computer Engineering, University of California – Riverside, Riverside, California 92521 USA 2Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California – Riverside, Riverside, California 92521 USA 3Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering, University of California – Riverside, Riverside, California 92521 USA 4Department of Chemistry, University of Georgia, Athens, Georgia 30602 USA 1 | P a g e R. Samnakay, D. Wickramaratne, T. R. Pope, R. K. Lake, T. T. Salguero and A.A. Balandin (2014) Abstract Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The 13 ´ 13C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to . The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction.
    [Show full text]
  • Scruby-CB-1976-Phd-Thesis.Pdf
    1 SUPERSTRUCTURES AND CHARGE-DENSITY WAVES IN DISTORTED AND INTERCALATED LAYER MATERIALS A thesis presented for the degree of Doctor of Philosophy in the University of London by Christopher Brian Scruby Imperial College of May 1976 Science and Technology 2 acbtopctUvres Els Trio-ouv Heb.12 v 2. 3 ABSTRACT Transmission electron and X-ray diffraction studies, and high resolution phase-contrast electron microscopy, have shown that, except for NbS2,all the Group Va transition metal layer dichalcogenides are unstable with respect to periodic structural deformation in some temperature range. Inmommen- surate and commensurate distorted phases have been identified in 1T TaS2, 4Hb TaS2, IT VSe2 and 2H TaSe2. The deformations remain incommensurate in 2H NbSe2. The three distorted phases of IT TaS make this compound 2 unique; two are incommensurate. A detailed model of the deform- ation structure of 1T (room temperature phase) has been prop- 2 osed from diffractometer data, in which groups of metal atoms form planar clusters. The distortion modes on the Ta sublattice are predominantly LA, and on the S sublattice TA1 out of phase with the Ta by 2T/3. There are thus periodic variations in layer thickness and rhombohedral stacking of deformations. There is a 30% increase in deformation amplitude at the 1T -1.1T transition, and a further 15 % from 1T to 1T 1 2 2 3' 1T and 1T 3TaS also show some degree of metal clustering. 1 2 At the transition to the 15a x f a superlattice (1T3) there is a deformation stacking change to give a triclinic cell.
    [Show full text]
  • Raman Studies of 2-Dimensional Van Der Waals Materials
    Raman Studies of 2-Dimensional van der Waals Materials By: Robert Christopher Schofield The University of Sheffield Faculty of Science Department of Physics and Astronomy A thesis submitted in partial fulfilment of the requirements for the degree of: Doctor of Philosophy Submission date: February 2018 Dedication For the love of my parents; Maggie & Peter . i ii Abstract Raman Studies of 2-Dimensional van der Waals Materials Robert Christopher Schofield Presented herein are results of optical studies with emphasis on the Raman response, providing significant contribution to the knowledge of the field. In MoxW(1−x)S2, confirmation of the behaviour of the excitonic properties is made. Raman measurements performed in this system allow investigation with unprecedented resolution, highlighting deviations in the high frequency A1g optical phonon mode from theoretical predictions, and previous experimental studies. In the low frequency, data confirms the trends in the shear and breathing interlayer modes in alloys between WS2 and MoS2 are well described by the modification in the square density. Resonant excitation for [Mo] < 0.4, highlights new evidence for the understanding of the hitherto unexplained ‘Peak X’ resonant feature. Diverse indium-selenium compounds isolated by novel means are studied. The ULF Raman modes of PDMS exfoliated InSe are documented for the first time, demonstrating the ε-phase with ABA stacking, with flake of thickness N manifesting (N −1) shear modes owing to resonant excitation of few layer samples. InSe flakes encapsulated in hexagonal boron nitride manifest different stacking orders to those of PDMS exfoliated InSe, and were found to have significant contamination, with crystalline degradation of the monolayer flake, and peaks corresponding N2 &O2 rotational modes present.
    [Show full text]
  • ( 12 ) United States Patent
    US009748371B2 (12 ) United States Patent ( 10 ) Patent No. : US 9 , 748 ,371 B2 Radosavljevic et al. ( 45 ) Date of Patent : Aug . 29 , 2017 (54 ) TRANSITION METAL DICHALCOGENIDE ( 56 ) References Cited SEMICONDUCTOR ASSEMBLIES ( 71 ) Applicant : Intel Corporation , Santa Clara , CA U . S . PATENT DOCUMENTS (US ) 2007 /0181938 A1 8 /2007 Bucher et al . ( 72 ) Inventors: Marko Radosavljevic , Portland , OR 2009/ 0146141 A1 6 /2009 Song et al. (US ) ; Brian S . Doyle , Portland , OR (Continued ) (US ) ; Ravi Pillarisetty , Portland , OR (US ) ; Niloy Mukherjee , Portland , OR FOREIGN PATENT DOCUMENTS (US ) ; Sansaptak Dasgupta , Hillsboro , OR (US ) ; Han Wui Then , Portland , KR 101348059 B1 1 / 2014 OR (US ) ; Robert S . Chau , Beaverton , WO 2012093360 A1 7 / 2012 OR (US ) ( 73 ) Assignee : INTEL CORPORATION , Santa Clara , OTHER PUBLICATIONS CA (US ) International Search Report and Written Opinion mailed Dec . 11 , ( * ) Notice : Subject to any disclaimer, the term of this 2014 , issued in corresponding International Application No . PCT/ patent is extended or adjusted under 35 US2014 /031496 , 10 pages . U . S . C . 154 (b ) by 0 days . (Continued ) (21 ) Appl. No. : 15 /120 , 496 ( 22 ) PCT Filed : Mar. 21 , 2014 Primary Examiner — Jaehwan Oh (86 ) PCT No .: PCT /US2014 /031496 (74 ) Attorney , Agent, or Firm — Schwabe, Williamson & $ 371 (c ) ( 1 ) , Wyatt , P . C . ( 2 ) Date : Aug . 19 , 2016 ( 87 ) PCT Pub . No . : WO2015 / 142358 (57 ) ABSTRACT PCT Pub . Date : Sep . 24 , 2015 Embodiments of semiconductor assemblies, and related (65 ) Prior Publication Data integrated circuit devices and techniques, are disclosed US 2017 /0012117 A1 Jan . 12 , 2017 herein . In some embodiments , a semiconductor assembly (51 ) Int. CI. may include a flexible substrate , a first barrier formed of a HOIL 29 / 778 ( 2006 .
    [Show full text]
  • Curriculum Vitae
    ALEXANDER A. BALANDIN Distinguished Professor, Department of Electrical and Computer Engineering University of California Presidential Chair Professor Director, Phonon Optimized Engineered Materials (POEM) Center Director, Center for Nanoscale Science and Engineering (CNSE) Nanofabrication Facility Founding Chair, Materials Science and Engineering (MS&E) Program Associate Director, DOE Spins and Heat in Nanoscale Electronic Systems (SHINES) EFRC University of California – Riverside, CA 92521 USA Balandin Group web-site: http://balandingroup.ucr.edu/ E-mail: [email protected] EDUCATION AND PROFESSIONAL PREPARATION • Postdoctoral Research, University of California - Los Angeles, USA, 1997 – 1999 • Ph.D. in Electrical Engineering, University of Notre Dame, Notre Dame, USA, 1996 • M.S. in Electrical Engineering, University of Notre Dame, Notre Dame, USA, 1995 • M.S. in Applied Physics, Moscow Institute of Physics and Technology, Russia, 1991 • B.S. in Mathematics, Moscow Institute of Physics and Technology, Russia, 1989 RESEARCH INTERESTS Advanced materials and nanostructures for applications in electronics, optoelectronics and energy conversion; quantum computing, spintronics, emerging devices and alternative computational paradigms; Raman and Brillouin spectroscopy; graphene and low-dimensional van der Waals materials; phonon engineering and thermal transport; low-frequency electronic noise in materials and devices; electronic noise spectroscopy EMPLOYMENT HISTORY • Director (2016 – present), Center for Nanoscale Science and Engineering
    [Show full text]
  • The Pennsylvania State University
    The Pennsylvania State University The Graduate School SYNTHESIS AND CHARACTERIZATION OF TWO-DIMENSIONAL MATERIALS FOR BEYOND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TECHNOLOGY A Dissertation in Materials Science and Engineering by Rui Zhao © 2019 Rui Zhao Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy August 2019 ii The dissertation of Rui Zhao was reviewed and approved* by the following: Joshua A. Robinson Associate Professor of Materials Science and Engineering Dissertation Advisor Chair of Committee Mauricio Terrones Distinguished Professor of Physics, Chemistry, and Materials Science and Engineering Roman Engel-Herbert Associate Professor of Materials Science and Engineering, Chemistry and Physics Saptarshi Das Assistant Professor of Engineering, Science & Mechanics John Mauro Professor of Materials Science and Engineering Chair, Intercollege Graduate Degree Program Associate Head for Graduate Education, Materials Science and Engineering *Signatures are on file in the Graduate School iii ABSTRACT Rapid development in Semiconductor research has brought excitement and challenges. New materials have pushed both academic and industry progress forward at a fast pace. Since the discovery of one-atomic layer of graphene in 2004, tremendous efforts have been devoted to pushing its properties to meet the technology demands, establish metrics and help accomplish milestones. The family of two-dimensional materials continue to expand. Transition metal dichalcogenides (TMDs) help compensate for the zero-bandgap of graphene and greatly increase the opportunities for their applications in electronics, optoelectronics, bioelectronics and medical- related applications. To enable electronic chips with higher density and faster processing/switching speeds and address technology bottlenecks, new correlated or functionalized two-dimensional materials are being positioned under the research spotlight.
    [Show full text]
  • Polytypism, Polymorphism and Superconductivity in Tase2-Xtex
    Polytypism, polymorphism and superconductivity in TaSe2-xTex Huixia Luo1, Weiwei Xie1, Jing Tao2, Hiroyuki Inoue3, András Gyenis3, Jason W. 1 3 2 1 Krizan , Ali Yazdani , Yimei Zhu , and R. J. Cava 1Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA. 2Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA. 3Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA. * [email protected];[email protected] 1 Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO2 are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivity of TaSe2, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2- xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is nearly 17 times higher than that of the much more commonly found 2H polytype. The reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.
    [Show full text]
  • Recent Advances in Two-Dimensional Materials Beyond Graphene 4 5 Ganesh R
    ACS Nano Page 2 of 64 1 2 3 Recent Advances in Two-Dimensional Materials Beyond Graphene 4 5 Ganesh R. BhimanapatiϮ, Zhong Linϙ, Vincent Meunier Ҧ, Yeonwoong Jung €, Judy Cha Ӂ, Saptarshi Das 6 Г, Di Xiao Ф, Youngwoo Son£, Michael S. Strano£, Valentino R. Cooper Ѡ, Liangbo Liang Ҧ, Steven G. 7 LouieϪ, Emilie Ringeζ, Wu ZhouѠ, Bobby G. SumpterѠ, Humberto TerronesҦ, Fengnian XiaӁ, Yeliang 8 WangЋ, Jun Zhuϙ, Deji Akinwande‡, Nasim AlemϮ, Jon A. Schuller¥, Raymond E. Schaak¶, Mauricio 9 TerronesϮ,ϙ,¶, Joshua A RobinsonϮ,* 10 11 Ϯ - Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, 12 Pennsylvania State University, University Park, PA 16802, United States. ϙ - Department of Physics, Center for 13 Two-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA 16802, United States. 14 €- Nanoscience Technology Center, Department of Materials Science and Engineering, University of Central 15 Florida, Orlando, Florida 32826, United States, Ӂ –Department of Mechanical Engineering and Material Science, 16 Yale school of Engineering and Applied Sciences, New Haven, CT 06520, United States. Ҧ- Department of 17 Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States 18 and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, 19 United States. Г - Birck Nanotechnology Center & Department of ECE, Purdue University, West Lafayette, Indiana 20 47907, United States. Ф - Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, United States. 21 £ - Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United 22 States. Ѡ - Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge 23 National Laboratory, Oak Ridge, Tennessee 37831, United States.
    [Show full text]
  • 5.3 Raman Spectroscopy of 1T-Tase2
    UC Riverside UC Riverside Electronic Theses and Dissertations Title Two - Dimensional van der Waals Materials: Characterization and Electronic Device Applications Permalink https://escholarship.org/uc/item/4453831z Author Samnakay, Rameez Rauf Publication Date 2016 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California UNIVERSITY OF CALIFORNIA RIVERSIDE Two - Dimensional van der Waals Materials: Characterization and Electronic Device Applications A Dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Materials Science and Engineering by Rameez Rauf Samnakay August 2016 Dissertation Committee: Dr. Alexander A. Balandin, Chairperson Dr. Roger K. Lake Dr. Alexander Khitun Copyright by Rameez Rauf Samnakay 2016 The Dissertation of Rameez Rauf Samnakay is approved: Committee Chairperson University of California, Riverside Acknowledgements I would like to express my thanks and gratitude to a multitude of people who I have met and interacted with over the course of my life and who helped mould me and make what I am today. First, I would like to thank my advisor, Dr. Alexander Balandin, for giving me guidance and direction as well as giving me an opportunity to conduct research at the highest level. What I learned from his expertise and professionalism to approaching problems and research will remain me with me throughout my life. I would like to thank Dr. Roger Lake and Dr. Alexander Khitun for serving in my dissertation committee as well as providing invaluable advice during the course of my studies. In addition, I was lucky to interact and collaborate with some great researchers and scientists especially Dr.
    [Show full text]