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586 99 587A 590A 590B. 594 595587B 589 588 US 2010.0248405A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2010/0248405 A1 TANAKA (43) Pub. Date: Sep. 30, 2010 (54) METHOD OF FABRICATING DISPLAY (30) Foreign Application Priority Data DEVICE Aug. 29, 2006 (JP) ................................. 2006-231956 (75) Inventor: Koichiro TANAKA, Isehara (JP) Publication Classification (51) Int. Cl. Correspondence Address: HOIL 2/336 (2006.01) NIXON PEABODY, LLP HOIL 33/00 (2010.01) 4019TH STREET, NW, SUITE 900 (52) U.S. Cl. ................... 438/34:438/158; 257/E33.053; WASHINGTON, DC 20004-2128 (US) 257/E21.414 (57) ABSTRACT (73) Assignee: SEMCONDUCTOR ENERGY To improve the use efficiency of materials and provide a LABORATORY CO.,LTD., technique of fabricating a display device by a simple process. Atsugi-shi (JP) The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conduc tive layer provided with the mask, removing the mask to form (21) Appl. No.: 12/795,771 an insulating layer having an opening; and forming a conduc tive film in the opening so as to be in contact with the exposed (22) Filed: Jun. 8, 2010 conductive layer, whereby the conductive layer and the con ductive film can be electrically connected through the insu Related U.S. Application Data lating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a (63) Continuation of application No. 1 1/889.546, filed on cylinder, or a triangular prism), a needle shape, or the like can Aug. 14, 2007, now Pat. No. 7,736,936. be used. 586 99 587a 590a 590b. 594 595587b 589 588 E Sy: Patent Application Publication Sep. 30, 2010 Sheet 1 of 35 US 2010/0248405 A1 FIG. A NNNSNNNNN 700 70 C8 x s w E. nNYNN 702 w v. W . a w NSNSNs N w S Sw A. Patent Application Publication Sep. 30, 2010 Sheet 2 of 35 US 2010/0248405 A1 FIG. 2A NNNCX 730 731 FIG. 2B ' ' w ' ' NSNS 732 FIG. 2C NSNSNSSS FIG. 2D N A w w w Patent Application Publication Sep. 30, 2010 Sheet 3 of 35 US 2010/0248405 A1 FIG. 3A 2202 220 2200 FIG. 3B a 2204a iii-2203 2204b it g E O - . F N was a will as FIG. 3C 22O6 Patent Application Publication Sep. 30, 2010 Sheet 5 of 35 US 2010/0248405 A1 FIG. 5 1618 16O2 1624 ±*** 66 42% % ) 1627 % 625 !!!!!!!!!'; 603 623 169 1626 ZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZZ629 Patent Application Publication Sep. 30, 2010 Sheet 6 of 35 US 2010/0248405 A1 p|6191Ezgi1916291czg|6091zzgl.Z099091||00091|99191 0Z9|| [777777/?@@@@@@ZZZZZZZZZZZZZZZZZZZZZZZ777777777x77777774;#:7% Patent Application Publication Sep. 30, 2010 Sheet 7 of 35 US 2010/0248405 A1 FIG. 7 1632 1640 Patent Application Publication Sep. 30, 2010 Sheet 8 of 35 US 2010/0248405 A1 04 a m uw me a wr wer. -**=-••=-_ FIG. 8B Ž$×××××××× OO FIG. 8C 105 OO Patent Application Publication Sep. 30, 2010 Sheet 9 of 35 US 2010/0248405 A1 *=-••?- -?•=?-+), FIG. 9B FIG. 9C 109 Patent Application Publication Sep. 30, 2010 Sheet 10 of 35 US 2010/0248405 A1 FIG. 1 OA 139b *•+www.• 120a 14 12Ob 39a 121a 11 12b FIG. OC r -------------- 19 s S SNSy & Rs SS S.N SN SYNY 39b Patent Application Publication Sep. 30, 2010 Sheet 11 of 35 US 2010/0248405 A1 FIG. 11B FIG. C s W Patent Application Publication Sep. 30, 2010 Sheet 12 of 35 US 2010/0248405 A1 26 ŠN 3 WYSNN FIG. 12C 26 Patent Application Publication Sep. 30, 2010 Sheet 13 of 35 US 2010/0248405 A1 FIG. 13A 31 S & NSNye FIG. 13B sty, S Patent Application Publication Sep. 30, 2010 Sheet 14 of 35 US 2010/0248405 A1 FIG. 14A 740 74.1 FIG. 4B : WS8: FIG. 14C FIG. 14D w Sep. 30, 2010 Sheet 15 of 35 US 2010/0248405 A1 Patent Application Publication Sep. 30, 2010 Sheet 16 of 35 US 2010/0248405 A1 t o N O s i108Zi# tary2 Aayiraal Patent Application Publication Sep. 30, 2010 Sheet 17 of 35 US 2010/0248405 A1 495a 495b FIG. 17A 487a 496 487b. 498 A222222222222222s aaaaaaaaaaaaaaaaaaaaaaaaz SSSSSSSSSSSSSSSSSSSSSS &2%22a2&aa FIG. 17B 4. ZZZZZZZZZZZZZZZZZ Zazazazzazzazzazza2222222 SNSxxxxx2& S N 461 460 FIG. 17C 475 y zzSZa SNSN Patent Application Publication Sep. 30, 2010 Sheet 18 of 35 US 2010/0248405 A1 cez|||082zº?zOzzzez197ggg 998·798Z98 198 098 Patent Application Publication Sep. 30, 2010 Sheet 19 of 35 US 2010/0248405 A1 o cy d N o c N d s t t s N N §§§§ Patent Application Publication Sep. 30, 2010 Sheet 20 of 35 US 2010/0248405 A1 |||||| (|||||§§§§ Z162 Patent Application Publication Sep. 30, 2010 Sheet 21 of 35 US 2010/0248405 A1 FIG. 21 586' 587a 590a 590b. 594 595587b 589 588 NA4 N 4 N-1 2 | SS SNNN 580 Patent Application Publication Sep. 30, 2010 Sheet 22 of 35 US 2010/0248405 A1 FIG.22A FIG. 22B 802 804. 860 803 860 803 804. 802 802 804. 860 803 860 803 804 802 Patent Application Publication Sep. 30, 2010 Sheet 23 of 35 US 2010/0248405 A1 FIG. 23A H E.s: FIG. 23B HAARE E. E. E: FIG. 23C N Patent Application Publication Sep. 30, 2010 Sheet 24 of 35 US 2010/0248405 A1 FIG 24A FIG 24B 62 FIG 24C R S. N N S. S U S NN NN N SNs SN SS & y y Patent Application Publication Sep. 30, 2010 Sheet 25 of 35 US 2010/0248405 A1 FIG. 25A 2704- 2701 2700. Patent Application Publication Sep. 30, 2010 Sheet 26 of 35 US 2010/0248405 A1 FIG. 26A 2750 270 700 ````3 §§ NYY -- || | six swall. Witwe. Alranao Air, ? Patent Application Publication Sep. 30, 2010 Sheet 27 of 35 US 2010/0248405 A1 FIG. 27 Patent Application Publication Sep. 30, 2010 Sheet 28 of 35 US 2010/0248405 A1 2003 CCC NXSYSWNS Patent Application Publication Sep. 30, 2010 Sheet 29 of 35 US 2010/0248405 A1 Patent Application Publication Sep. 30, 2010 Sheet 30 of 35 US 2010/0248405 A1 FIG 30A 763a NN × N FIG. 3OB ??? &NS Patent Application Publication Sep. 30, 2010 Sheet 31 of 35 US 2010/0248405 A1 FIG. 31 8500 8502 Patent Application Publication Sep. 30, 2010 Sheet 32 of 35 US 2010/0248405 A1 FIG. 32 UD WDD CL UDB LIN 860 8605 8612 860 LIN2 86O7 is OUT 8602 RSTS-8609 RIN1 8603 8606 863 8608 RIN2 8604 8611 Patent Application Publication Sep. 30, 2010 Sheet 33 of 35 US 2010/0248405 A1 FIG. 33 WDD GND Patent Application Publication Sep. 30, 2010 Sheet 34 of 35 US 2010/0248405 A1 FIG. 34A NY { XYXYYYY. X : S. 8 x. r:x 3.ix. 4. YY XXX:St. X : X X 33 s:xa:8 : C kXX a N.A N ^^^X^3 XX FIG. 34B . in me u, u, a. m. m. m. a- - - a m me a me m wrap- a - mm am - m as m male m - - m man r air . or me arm mm. sm was a ram man - all as - - - - - us as a ma man m in a an an a T- a mem. - - a mum Patent Application Publication Sep. 30, 2010 Sheet 35 of 35 US 2010/0248405 A1 FIG. 35 YW Axsway WWr IIII US 2010/0248405 A1 Sep. 30, 2010 METHOD OF FABRICATING DISPLAY whereby the conductive layer and the conductive film are DEVICE electrically connected at the opening provided in the insulat ing layer. BACKGROUND OF THE INVENTION 0008. The shape of the opening reflects the shape of the 0001 1. Field of the Invention mask. Therefore, any mask with which an opening with a 0002 The present invention relates to a method of fabri desired shape can beformed is acceptable. The mask can have cating a display device having a stacked structure of thin a columnar shape (e.g., a prism, a cylinder, or a triangular films. More specifically, the invention relates to the step of prism), a needle shape, or the like. In addition, the depth forming an opening in a thin film in the process of fabricating direction of the opening can be determined by the force gen a display device. erated upon providing the mask and by the film strength of the 0003 2. Description of the Related Art conductive layer that is provided with the mask. When a 0004. Thin film transistors (also referred to as “TFTs) needle-shaped mask having a sharp end is provided in Such a and electronic circuits having TFTs are fabricated by the steps manner that a part of the sharp end Sticks into the conductive of stacking various thin films such as a semiconductor film, an layer, an opening with a recessed portion can beformed in the insulating film, and a conductive film, and forming predeter conductive layer. Further, after the formation of the opening, mined patterns in the films by a photolithography technique the conductive layer exposed at the bottom of the opening as appropriate. A photolithography technique is a technique may be removed by etching, using the insulating layer having of transferring a circuit pattern or the like, which is called a the opening as a mask. photomask and is formed from a non-light-transmissive material on a transparent flat plate, onto a Substrate through 0009. The insulating layer can be formed by an evapora light exposure, and is widely used in the process of fabricating tion method, a PVD (Physical Vapor Deposition) method semiconductor integrated circuits and the like.
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