Design of High Isolation Frequency Mixer in CMOS 0.18 µm Technology Suitable for Low Power Radio Frequency Applications Khalid Faitah, Ahmed El Oualkadi, Abdellah Ait Ouahman To cite this version: Khalid Faitah, Ahmed El Oualkadi, Abdellah Ait Ouahman. Design of High Isolation Frequency Mixer in CMOS 0.18 µm Technology Suitable for Low Power Radio Frequency Applications. Physical and Chemical News, Best Edition, 2009, 49, pp.1-7. hal-00947412 HAL Id: hal-00947412 https://hal.inria.fr/hal-00947412 Submitted on 16 Feb 2014 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. September 2009 Phys. Chem. News 49 (2009) 01-07 PCN DESIGN OF HIGH ISOLATION FREQUENCY MIXER IN CMOS 0.18 µm TECHNOLOGY SUITABLE FOR LOW POWER RADIO FREQUENCY APPLICATIONS CONCEPTION D’UN MELANGEUR DE FREQUENCE EN TECHNOLOGIE CMOS 0,18 µm, FAIBLE PUISSANCE ET BONNE ISOLATION, DEDIE A DES APPLICATIONS RADIO FREQUENCES K. Faitah*, A. El Oualkadi, A. Ait Ouahman Laboratoire de Microinformatique, Systèmes Embarqués et Systèmes sur Puces Université Cadi Ayyad Ecole Nationale des Sciences Appliquées. Avenue Abdelkrim El Khattabi BP : 575 Marrakech Maroc. * Corresponding author. E-mail:
[email protected] Received: 16 July 2008; revised version accepted: 10 October 2008 Abstract In this paper we will present the design of Single Balanced Mixer, operating at a frequency RF of 1.9 GHz, implemented in 0.18 µm CMOS technology at supply voltage of 1.8 V.