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Ohmic contact

  • Manipulation of Electrical Resistivity and Optical Properties of Zinc Oxide Thin Films Grown by Pulsed Laser Deposition and the Sol-Gel Method

    Manipulation of Electrical Resistivity and Optical Properties of Zinc Oxide Thin Films Grown by Pulsed Laser Deposition and the Sol-Gel Method

  • Bulk Foil Pt-Rh Micro-Relays for High Power Rf and Other Applications

    Bulk Foil Pt-Rh Micro-Relays for High Power Rf and Other Applications

  • MOCVD Regrown Ohmic Contacts to Algan/Gan Heterostructures

    MOCVD Regrown Ohmic Contacts to Algan/Gan Heterostructures

  • Microstructure and Properties of Aluminum Contacts Formed on Gaas(100) by Low Pressure Chemical Vapor Deposition with Dimethylethylamine Alane Source

    Microstructure and Properties of Aluminum Contacts Formed on Gaas(100) by Low Pressure Chemical Vapor Deposition with Dimethylethylamine Alane Source

  • Formation Process and Properties of Ohmic Contacts Containing Molybdenum to Algan/Gan Heterostructures

    Formation Process and Properties of Ohmic Contacts Containing Molybdenum to Algan/Gan Heterostructures

  • Evaluation of Metal/Indium-Tin-Oxide for Transparent Low-Resistance Contacts to P-Type Gan

    Evaluation of Metal/Indium-Tin-Oxide for Transparent Low-Resistance Contacts to P-Type Gan

  • Ohmic Contact Formation Between Metal and Algan/Gan

    Ohmic Contact Formation Between Metal and Algan/Gan

  • Gold Contacts to Semiconductor Devices

    Gold Contacts to Semiconductor Devices

  • In/ITO Ohmic Contacts to Ga-Face and N-Face N-Gan for Ingan-Based Light-Emitting Diodes

    In/ITO Ohmic Contacts to Ga-Face and N-Face N-Gan for Ingan-Based Light-Emitting Diodes

  • Study of the Metal-Semiconductor Contact to Zno Films

    Study of the Metal-Semiconductor Contact to Zno Films

  • Growth Condition-Oriented Defect Engineering for Changes in Au–Zno Contact Behavior from Schottky to Ohmic and Vice Versa

    Growth Condition-Oriented Defect Engineering for Changes in Au–Zno Contact Behavior from Schottky to Ohmic and Vice Versa

  • ELECTRICAL PROPERTIES of JUNCTION STRUCTURE in SILICON DEVICES by Haiming Guo B.S. in Optical Information Science, Dalian Univer

    ELECTRICAL PROPERTIES of JUNCTION STRUCTURE in SILICON DEVICES by Haiming Guo B.S. in Optical Information Science, Dalian Univer

  • Platinum/Titanium Dioxide (Rutile) Interface

    Platinum/Titanium Dioxide (Rutile) Interface

  • Ohmic Graphite-Metal Contacts on Oxygen-Terminated Lightly Boron-Doped CVD Monocrystalline Diamond T ⁎ M

    Ohmic Graphite-Metal Contacts on Oxygen-Terminated Lightly Boron-Doped CVD Monocrystalline Diamond T ⁎ M

  • PN and Metal–Semiconductor Junctions

    PN and Metal–Semiconductor Junctions

  • Study of Ohmic Contact Formation on Algan/Gan Heterostructures

    Study of Ohmic Contact Formation on Algan/Gan Heterostructures

  • Plasma Treatment Method for Ohmic Contacts on Zinc Oxide Thin Film Transistors

    Plasma Treatment Method for Ohmic Contacts on Zinc Oxide Thin Film Transistors

  • Contacts 30 October 2020 Fundamental Concepts Underlying PV Conversion

    Contacts 30 October 2020 Fundamental Concepts Underlying PV Conversion

Top View
  • The Role of Nickel and Titanium in the Formation of Ohmic Contacts on P-Type 4H–Sic Farah Laariedh, Mihai Lazar, P
  • Challenge of Applying Ohmic Contacts to Gallium Arsenide Devices: In-Depth Look Metal-To-Semiconductor (M-S) Contacts Are Prese
  • Ohmic Contact Metallization for Silicon Carbide in Future Transportation and Aviation Systems
  • A Study of Transparent Indium Tin Oxide (ITO) Contact to P-Gan
  • Novel RF MEMS Switch Process for Ohmic- Contact Reliability Improvements by Narrow Electrode Gaps
  • 1.1 Silicon Crystal Structure
  • Metal-Semiconductor Junctions
  • Investigation of Chromium to Indium Tin Oxide (ITO) Ohmic Contact For
  • Fabrication and Characterization of Ohmic Contacts
  • Ohmic Contact Between Iridium Film and Hydrogen-Terminated Single
  • Ohmic Contact Formation Between Metal and Algan/Gan Heterostructure Via Graphene Insertion
  • Atomic Layer Deposition of Zinc Oxide
  • Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 ◦C
  • Ohmic Contact Mechanism of Titanium-Based Electrodes on N-Type Gallium Nitride†
  • Metal-Semiconductor Junctions: Ohmic Contact and Schottky Junction
  • MEMS) Switches
  • Assessment of Candidate Metallization Systems Deposited on Diamond Using Nano-Indentation and Nano-Scratching Tests
  • A 50-100 Ghz Ohmic Contact SPDT RF MEMS Silicon Switch with Dual Axis Movement


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