Electronic Circuit Analysis Lecture Notes B.Tech
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Common Drain - Wikipedia, the Free Encyclopedia 10-5-17 下午7:07
Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 Common drain From Wikipedia, the free encyclopedia In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single- stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the transistor serves as the input, the source is the output, and the drain is common to both (input and output), hence its name. The analogous bipolar junction transistor circuit is the common- collector amplifier. In addition, this circuit is used to transform impedances. For example, the Thévenin resistance of a combination of a voltage follower driven by a voltage source with high Thévenin resistance is reduced to only the output resistance of the voltage follower, a small resistance. That resistance reduction makes the combination a more ideal voltage source. Conversely, a voltage follower inserted between a small load resistance and a driving stage presents an infinite load to the driving stage, an advantage in coupling a voltage signal to a small load. Characteristics At low frequencies, the source follower pictured at right has the following small signal characteristics.[1] Voltage gain: Current gain: Input impedance: Basic N-channel JFET source Output impedance: (the parallel notation indicates the impedance follower circuit (neglecting of components A and B that are connected in parallel) biasing details). The variable gm that is not listed in Figure 1 is the transconductance of the device (usually given in units of siemens). References http://en.wikipedia.org/wiki/Common_drain Page 1 of 2 Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 1. -
Notes on BJT & FET Transistors
Phys2303 L.A. Bumm [ver 1.1] Transistors (p1) Notes on BJT & FET Transistors. Comments. The name transistor comes from the phrase “transferring an electrical signal across a resistor.” In this course we will discuss two types of transistors: The Bipolar Junction Transistor (BJT) is an active device. In simple terms, it is a current controlled valve. The base current (IB) controls the collector current (IC). The Field Effect Transistor (FET) is an active device. In simple terms, it is a voltage controlled valve. The gate-source voltage (VGS) controls the drain current (ID). Regions of BJT operation: Cut-off region: The transistor is off. There is no conduction between the collector and the emitter. (IB = 0 therefore IC = 0) Active region: The transistor is on. The collector current is proportional to and controlled by the base current (IC = βIC) and relatively insensitive to VCE. In this region the transistor can be an amplifier. Saturation region: The transistor is on. The collector current varies very little with a change in the base current in the saturation region. The VCE is small, a few tenths of volt. The collector current is strongly dependent on VCE unlike in the active region. It is desirable to operate transistor switches will be in or near the saturation region when in their on state. Rules for Bipolar Junction Transistors (BJTs): • For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base. -
6.117 Lecture 2 (IAP 2020) 1 Agenda
Lecture 2 Intermediate circuit theory, nonlinear components Graphics used with permission from AspenCore (http://electronics-tutorials.ws) 6.117 Lecture 2 (IAP 2020) 1 Agenda 1. Lab 1 review: RC circuits 2. Nonlinear components: diodes, BJTs and MOSFETs 3. Operational amplifiers (op-amps) 4. Audio amplification 5. Lab 2 overview: components and specifications 6.117 Lecture 2 (IAP 2020) 2 Lab 1 review Resistor-capacitor (RC) circuits 6.117 Lecture 2 (IAP 2020) 3 RC charging response • Capacitor voltage Vc grows exponentially close to Vs • Rate of exponential growth defined by resistor value (smaller resistor = faster charging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 4 RC discharging response • Capacitor voltage Vc decays exponentially to 0 • Rate of exponential decay defined by resistor value (smaller resistor = faster discharging) RC time constant Capacitor voltage 6.117 Lecture 2 (IAP 2020) 5 RC transient response 6.117 Lecture 2 (IAP 2020) 6 RC Time constant tables Charging Discharging Percentage of Percentage of Time Constant Time Constant applied voltage applied voltage 0.5 39.3% 0.5 60.7% 0.7 50.3% 0.7 49.7% 1 63.2% 1 36.8% 2 86.5% 2 13.5% 3 95.0% 3 5.0% 4 98.2% 4 1.8% 5 99.3% 5 0.7% 6.117 Lecture 2 (IAP 2020) 7 Filtering • Filter: Circuit whose response depends on the frequency of the input • Reactance: “Effective resistance” of a capacitor, varies inversely with frequency • Can construct a voltage divider using a capacitor as a “resistor” to exploit this property 6.117 Lecture 2 (IAP 2020) 8 Types of filters 1 LPF 푓 = 퐻푧 푐 2휋푅퐶 1 HPF 푓 = 퐻푧 푐 2휋푅퐶 1 푓 = 퐻푧 퐻 2휋푅 퐶 BPF 1 1 1 푓퐿 = 퐻푧 2휋푅2퐶2 6.117 Lecture 2 (IAP 2020) 9 Nonlinear components Diodes, BJTs and MOSFETs 6.117 Lecture 2 (IAP 2020) 10 Linear vs. -
Amplificadores De Sinais Acesso Em: 17 Maio 2018
Amplificadores de sinais https://www.electronics-tutorials.ws/amplifier/amp_1.html Acesso em: 17 Maio 2018 Sumário • 1. Introduction to the Amplifier • 2. Common Emitter Amplifier • 3. Common Source JFET Amplifier • 4. Amplifier Distortion • 5. Class A Amplifier • 6. Class B Amplifier • 7. Crossover Distortion in Amplifiers • 8. Amplifiers Summary • 9. Emitter Resistance • 10. Amplifier Classes • 11. Transistor Biasing • 12. Input Impedance of an Amplifier • 13. Frequency Response • 14. MOSFET Amplifier • 15. Class AB Amplifier Introduction to the Amplifier An amplifier is an electronic device or circuit which is used to increase the magnitude of the signal applied to its input. Amplifier is the generic term used to describe a circuit which increases its input signal, but not all amplifiers are the same as they are classified according to their circuit configurations and methods of operation. In “Electronics”, small signal amplifiers are commonly used devices as they have the ability to amplify a relatively small input signal, for example from a Sensor such as a photo- device, into a much larger output signal to drive a relay, lamp or loudspeaker for example. There are many forms of electronic circuits classed as amplifiers, from Operational Amplifiers and Small Signal Amplifiers up to Large Signal and Power Amplifiers. The classification of an amplifier depends upon the size of the signal, large or small, its physical configuration and how it processes the input signal, that is the relationship between input signal and current flowing -
UNIT-I Discrete Electronic Circuits – SEIA1301
SCHOOL OF ELECTRICAL & ELECTRONICS ENGINEERING DEPARTMENT OF ELECTRONICS & INSTRUMENTATION UNIT- I Discrete Electronic Circuits – SEIA1301 1.Introduction to BJT Amplifiers BJT amplifiers : CE, CB and CC amplifiers - multistage amplifiers - differential amplifier - designing BJT amplifier networks(analysis using hybrid -π model) FET amplifiers : CS, CG and CD amplifiers -designing FET amplifier networks Frequency response : low frequency response of BJT and FET amplifiers - Miller effect capacitance - high frequency response of BJT and FET amplifiers. 1.1 Common Base Amplifier: The common base amplifier circuit is shown The VEE source forward biases the emitter diode and VCC source reverse biased collector diode. The ac source vin is connected to emitter through a coupling capacitor so that it blocks dc. This ac voltage produces small fluctuation in currents and voltages. The load resistance RL is also connected to collector through coupling capacitor so the fluctuation in collector base voltage will be observed across RL. The dc equivalent circuit is obtained by reducing all ac sources to zero and opening all capacitors. The dc collector current is same as IE and VCB is given by VCB = VCC - IC RC. These current and voltage fix the Q point. The ac equivalent circuit is obtained by reducing all dc sources to zero and shorting all coupling capacitors. r'e represents the ac resistance of the diode as shown in Fig. Figure 1.1 Common base diagram 2 Figure 1.2 Equivalent Circuit diagram of CB Fig. shows the diode curve relating IE and VBE. In the absence of ac signal, the transistor operates at Q point (point of intersection of load line and input characteristic). -
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline 1. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier stages Reading Assignment: Howe and Sodini, Chapter 9, Sections 9-1-9.3 6.012 Spring 2007 Lecture 24 1 1. Introduction Most often, single stage amplifier does not accomplish design goals: • Need more gain than could be provided by a single stage • Need to adapt to specified RS and RL to maximize efficiency ⇒ Multistage amplifier VBIAS Issues: • What amplifying stages should be used and in what order? • What devices should be used, BJT or MOSFET? • How is biasing to be done? 6.012 Spring 2007 Lecture 24 2 Summary of single stage amplifier characteristics Key Stage A , A R R vo io in out Function Common Transcon- ∞ ro // roc ductance Source Avo =−gm(ro //roc) amplifier Common gm 1 Voltage Avo ≈ ∞ Drain gm + gmb gm + gmb Buffer Current Common A ≈ −1 1 r //[r (1+ g R )] io oc o m S buffer Gate gm + gmb Common Transcon- Avo=−gm(ro//roc) r Emitter π ro // roc ductance amplifier Common 1 RS Voltage Avo ≈1 rπ + βo (ro // roc // RL ) + Collector gm βo buffer Common Current Aio ≈ −1 1 r //[r (1+ g ()r // R )] oc o m π S buffer Base gm Differences between BJT’s and MOSFETs BJT MOSFET βo rπ = gmb ∝ gm gm IC W gm = > gm = 2 µCox ID Vth L VA 1 ro = > ro = IC λI D 6.012 Spring 2007 Lecture 24 3 2. CMOS Multistage Voltage Amplifier Goals: • High voltage gain, Avo • High input resistance, Rin • Low output resistance, Rout Good starting point: Common-Source stage: •Rin=∞ •Avo=-gm(ro//roc), probably insufficient •Rout= (ro//roc), too high 6.012 Spring 2007 Lecture 24 4 CMOS Multistage Voltage Amplifier (contd.) Add second CS stage to get more gain: •Rin=∞ •Avo=gm1(ro1//roc1) gm2(ro2//roc2) •Rout= (ro2//roc2), still too high Add CD stage at output (to reduce Rout): •Rin=∞ gm3 • Avo = gm1()ro1 || roc1 gm2()ro2 || roc2 1 gm3 + gmb3 • Rout = gm3 + gmb3 6.012 Spring 2007 Lecture 24 5 3. -
Lecture 33 Multistage Amplifiers (Cont.)
Lecture 33 Multistage Amplifiers (Cont.) DC Coupling: General Trends * Goal: want both input and output to be “centered” at halfway between the positive and negative supplies (or ground, for a single supply) -- in order to have maximum possible swing at the input and at the output. Summary of DC shifts through the single stages: BJT Amp. npn version Type CE positive CB positive CC negative* MOS Amp. n-channel p-channel Type version version CS positive negative CG positive negative CD negative* positive* The DC voltage shifts for CC/CD stages are set by the VBE = 0.7 V drop or by the VGS of the transistor and can be specified by the designer. EE 105 Fall 2001 Lecture 33 DC Coupling Example * Common drain - common collector cascade (infinite input resistance, fairly low output resistance, unity voltage gain ... reasonable voltage buffer) For CC stage, the optimum output voltage of 2.5 V (centered between + 5 V and ground for maximum swing) --> VIN2 = DC input of CC amp = 2.5 + 0.7 V = 3.2 V The DC of the n-channel CD amplifier is then: VIN = DC input of CD amp = VIN2 + VGS1 = 3.2 V + 1.5 V = 4.7 V where we have assumed that VGS1 = 1.5 V as a typical gate-source voltage (actual number comes from ISUP1and (W/L)). * too close to the supply voltage -- input DC level should be centered at or near 2.5 V. EE 105 Fall 2001 Lecture 33 DC Biasing Example (Cont.) * Solution: use p-channel CD amplifier since it shifts the DC level in the positive direction from input to output Selection of large (W/L) for the p-channel --> input DC level can be adjusted closer to 2.5 V. -
"Seminar 700 Topic 2
Bob Mammano Isolation Requirements face of the board. Clearance denotes the short- A fact of life for all off-line power supply est distance between two conductive parts as systems is the requirement for galvanic isola- measured through the air, for example, the tion from input to output. This isolation is closest spacing of two bare leads as they run primarily in the interest of safety to insure that from the PC board to the point where they there will be no shock hazard in using the become insulated. Finally, the Isolation Barrier equipment, and the requirements have been represents the shortest distance between two quantized over the years by many agencies conductive parts separated by a dielectric which throughout the world, most notably VDE and meets the voltage and resistance specifications. IEC in Europe, and UL in the United States. With an optocoupler, this is the minimum Exanlples of some of the more stringent of spacing of conductors within a plastic molded these specifications are listed in Table 1. Note package. Transformer windings have the addi- that isolation involves mechanical as well as tional requirement for three separate layers of electrical specifications, and as new technolo- insulation, any two of which are capable of gies shrink component sizes, these physical withstanding the required voltage. spacings can often become limiting factors. For those unfamiliar with the terminology, the All AC mains connecu~d power supplies following definitions are offered: must provide this isolation between the input Creepage is defined as the shortest path be- and output sections of ti le supply and, of tween two conductive parts on opposite sides of course, this is normally accomplished with a the isolation as measured along the surface of power transformer. -
Stage Amplifier
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 2115 #Tutorial 7 Designing a Cascaded Multistage Amplifier Background: In the previous labs you’ve designed common-emitter and common-collector amplifiers. Each amplifier has its own properties for amplifying either the voltage or the current of an incoming signal. Attaching the output of one amplifier to the input of another is known as cascading. Typically this is done to achieve a desired voltage and current gain to deliver certain amount of power to a load. This tutorial will present a problem that requires a cascaded amplifier as its solution. Problem Statement: Using a supply voltage of 14 V (DC), build an amplifier that will deliver 1.8mWatts (RMS) to a 400Ω load. The input signal will be 70mV (RMS) at 10kHz. Assume a lab function generator supplies the input signal. Architecting the Overall System: 1) Start by converting everything into “peak” voltages and wattages, instead of RMS values. Power to deliver to load: 1.8mWatts (RMS) = 2.5mWatts (at the peak) Input Signal: 70mV (RMS) = 100mV (at the peak) 2) You then want to draw a ‘big picture’ of the system you’re about to design: We draw the load in a Function LOAD box, because it may not generator be just a 400ohm resistor, it could be a 50Ω real device (like the input to another amplifier!). As engineers we just 100 400Ω know we need to deliver mV that device 2.5mWatts of power! First question to ask yourself, “do I even need an amplifier to reach the goal?” You can perform some basic calculations from the above picture. -
• Course Roadmap • Rectification • Bipolar Junction Transistor
• Course Roadmap • Rectification • Bipolar Junction Transistor Acnowledgements: Neamen, Donald: Microelectronics Circuit Analysis and Design, 3rd Edition The Art Of Electronics by Horowitz and Hill 6.101 Spring 2020 Lecture 3 1 6.101 Course Roadmap • Passive components: RLC – with RF • Diodes • Transistors: BJT, MOSFET, antennas • Op‐amps, 555 timer, ECG • Switch Mode Power Supplies • Fiber optics, PPG • Applications 6.101 Spring 2020 Lecture 3 2 Time Domain Analysis v (Ac KAm cosmt)*cosct KA v A cos t m [cos( )t cos( )t] c c 2 c m c m 6.101 Spring 2020 Lecture 3 3 Fourier Series ‐ Ramp function [ t, sum ] = ramp(number) %generate a ramp based on fixed number of terms % t = 0:.1:pi*4; % display two full cycles with 0.1 spacing sum = 0 for n=1:number sum = sum + sin(n*t)*(-1)^(n+1)/(n*pi); end plot(t, sum) shg end 6.101 Spring 2020 Lecture 3 4 CT: center tap Rectifier Circuits + 1N4001 + V = 120 V 60 Hz 12.6 VCT RMS C F R L v OUT out - Pri Sec 3a) Half-wave rectifier circuit diagram 1N4001 + + 120 V 60 Hz 12.6 VCT RMS C F R L v OUT Vout = - Pri Sec 1N4001 3b) Full-wave rectifier circuit diagram 4x 1N4001 + + 12.6 VCT RMS 120 V 60 Hz CF R v L OUT Vout = - Pri Sec 3c) Bridge rectifier circuit diagram RC >> 16.6ms why? 6.101 Spring 2020 Lecture 3 5 Full Wave Bridge vs Center Tapped Center tapped advantages: • Lower diode voltage drop (high efficiency) • Secondary windings carries ½ average current (thinner windings, easier to wind) • Used in computer power supplies 6.101 Spring 2020 Lecture 3 6 Physical Wiring Matters 6.101 Spring -
Experiment No
ST.ANNE’S COLLEGE OF ENGINEERING AND TECHNOLOGY ANGUCHETTYPALAYAM, PANRUTI – 607 110 Department of Electronics & Communication Engineering OBSERVATION EC8361 – ANALOG AND DIGITAL CIRCUITS LABORATORY STUDENT NAME : REGISTER NO : SEMESTER&SEC : YEAR : Faculty In-charge Mr. S. DURAI RAJ AP/ECE 1 | P a g e SYLLABUS EC8361 ANALOG AND DIGITAL CIRCUITS LABORATORY LIST OF ANALOG EXPERIMENTS: 1. Design of Regulated Power supplies 2. Frequency Response of CE, CB, CC and CS amplifiers 3. Darlington Amplifier 4. Differential Amplifiers- Transfer characteristic, CMRR Measurement 5. Cascode / Cascade amplifier 6. Determination of bandwidth of single stage and multistage amplifiers 7. Analysis of BJT with Fixed bias and Voltage divider bias using Spice 8. Analysis of FET, MOSFET with fixed bias, self-bias and voltage divider bias using simulation software like Spice 9. Analysis of Cascode and Cascade amplifiers using Spice 10. Analysis of Frequency Response of BJT and FET using Spice LIST OF DIGITAL EXPERIMENTS: 11. Design and implementation of code converters using logic gates (i) BCD to excess-3 code and vice versa (ii) Binary to gray and vice- versa 12. Design and implementation of 4 bit binary Adder/ Subtractor and BCD adder using IC 7483 13. Design and implementation of Multiplexer and De-multiplexer using logic gates 14. Design and implementation of encoder and decoder using logic gates 15. Construction and verification of 4 bit ripple counter and Mod-10 / Mod-12 Ripple counters 16. Design and implementation of 3-bit synchronous up/down counter 2 | P a g e DESIGN OF REGULATED POWER SUPPLIES EXPERIMENT:1 DATE: AIM: To design and construct a regulated power supplies circuit and to determine the load regulation and efficiency of the regulated power supply. -
Transistor Common Base Configuration Common Emitter
5/1/2011 Transistor Transistor Function Transistors are three terminal active devices made from different The transistor's have two basic functions: "switching" semiconductor materials that can (digital electronics) or "amplification" (analogue act as either an insulator or a electronics). conductor by the application of a small signal voltage. Transistor Configuration The Bipolar Transistor basic construction consists of two PN- junctions producing three connecting terminals with each • Common base configuration : No current gain but terminal being given a name to identify it from the other two. voltage gain Three terminals of transistor are emitter(E), base(B) , and • Common Emitter Configuration : Current gain and collector (C). Voltage gain E B C • Common Collector Configuration : Current gain but no voltage gain NPN Transistor PNP Transistor Common Base Configuration Common Emitter Configuration The base connection is common to both the input signal and the output signal with the input signal being applied between the In the Common Emitter configuration, the input signal base and the emitter terminals. The corresponding output signal is applied between the base and emitter, while the is taken from between the base and the collector terminals as output is taken from between the collector and the shown with the base terminal grounded. emitter as shown. Common Collector Configuration Common Emitter Characteristics (mA) B I (mA) C I In the Common Collector or grounded collector configuration, the collector is now common through the supply. The input signal is connected V (V) V (V) directly to the base, while the output is taken from the emitter load as BE CE shown.