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Ion Beam Applications in Surface and Bulk Modification of Insulators

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Ion Beam Applications in Surface and Bulk Modification of Insulators IAEA-TECDOC-1607 Ion Beam Applications in Surface and Bulk Modification of Insulators December 2008 IAEA-TECDOC-1607 Ion Beam Applications in Surface and Bulk Modification of Insulators December 2008 The originating Section of this publication in the IAEA was: Physics Section International Atomic Energy Agency Wagramer Strasse 5 P.O. Box 100 A-1400 Vienna, Austria ION BEAM APPLICATIONS IN SURFACE AND BULK MODIFICATION OF INSULATORS IAEA, VIENNA, 2008 IAEA-TECDOC-1607 ISBN 978–92–0–112008–3 ISSN 1011–4289 © IAEA, 2008 Printed by the IAEA in Austria December 2008 FOREWORD Ion implantation and ion beam analysis are powerful tools for characterization and modification of materials by means of bombarding solids with energetic ions. Although the techniques have been highly developed during the past half century, they face new challenges as material processing approaches the nanometer scales. Under a programme entitled Effective Utilization of Particle Accelerators, the IAEA has over recent years initiated two Coordinated Research Projects (CRPs) related to the modification and analysis of materials by ion beams: Use of Ion Beam Techniques for Analysis of Light Elements in Thin Films, including Depth Profiling, and Application of MeV Ion Beams for Development and Characterization of Semiconductor Materials. These CRPs attracted over 40 applications. In addition, some 12 developing Member States have received or applied for technical cooperation support to establish low energy particle accelerators suitable for ion beam analysis and materials modification. This interest underscores the worldwide attention that is being attracted generally by research in materials modification and the development of new advanced materials, and in particular, by ion beam applications in these endeavours. Motivated by this interest and to continue supporting this important field of study, the IAEA in 2004 established a CRP on Ion Beam Modification of Insulators. The objectives of the CRP were (1) to facilitate applied, innovative R&D efforts utilising low energy accelerators to study material characteristics, develop appropriate techniques and synthesise novel materials, and (2) to strengthen the capacity of accelerator laboratories in developing Member States by encouraging partnerships with colleagues from developed Member States. This publication includes outputs obtained from research contracts and agreements under this CRP. The document represents an output of a series of meetings, which started with the Advisory Group Meeting in 2002, and was followed by three Research Coordination Meetings (RCMs). The first RCM was held in Vienna in 2004, where agreement was reached on the coordinated aspects of the CRP, including research activities and milestones. In June 2006 a second RCM was hosted by iThemba LABS in South Africa, where participants reported on their progress and achievements. The final RCM was hosted by the Fast Neutron Research Facility, Chiang Mai University, Thailand, in December 2007, where participants reported their final results and evaluated the achievements of the CRP. The achievements of the participants within the three years of the CRP are included in this publication. The contributions of the participants and of their research colleagues are very much appreciated, as is the hospitality offered by the hosts of the RCMs. It is with deep sadness that the members of the CRP received news of the passing away of Mr Zvonko Medunić of Zagreb (Croatia), who was an initiating member of this CRP. The IAEA officer responsible for this IAEA-TECDOC was F. Mulhauser of the Division of Physical and Chemical Sciences. U. Rosengard initiated this CRP at the IAEA. I EDITORIAL NOTE This publication has been prepared from the original material as submitted by the authors. The views expressed do not necessarily reflect those of the IAEA, the governments of the nominating Member States or the nominating organizations. The use of particular designations of countries or territories does not imply any judgement by the publisher, the IAEA, as to the legal status of such countries or territories, of their authorities and institutions or of the delimitation of their boundaries. The mention of names of specific companies or products (whether or not indicated as registered) does not imply any intention to infringe proprietary rights, nor should it be construed as an endorsement or recommendation on the part of the IAEA. The authors are responsible for having obtained the necessary permission for the IAEA to reproduce, translate or use material from sources already protected by copyrights. CONTENTS Summary .................................................................................................................................... 1 Ion beam modification of polymer surfaces............................................................................... 9 T. Tsvetkova, S. Balabanov Modification of electronic properties in insulators using ion microprobe ............................... 19 M. Jakšič, M. Karlušič, I. Bogdanovič Radovič, Ž. Pastuovič, N. Skukan, Z. Medunič Formation of ferro-, para-, and superparamagentic nanostructures by ion beam treatment of materials ..................................................................................................... 27 H. Hofsäss, C. Ronning, S. Müller, K. Zhang, H. Zutz Formation of magnetic nanoclusters and complexes by ion implantation of Fe into suitable insulators .................................................................................................... 35 K. Bharuth-Ram Ion implantation doping of SrTiO3........................................................................................... 43 U. Wahl, J.G. Correia, A.C. Marques, C.P. Marques, E. Alves, L. Pereira, J.P. Araújo, K. Johnston Ion beam modification of sputtered metal nitride thin films.................................................... 53 M. Milosavljevič, D. Peruško, M. Popovič, M. Novakovič Ion beam synthesis and modification of silicon carbide .......................................................... 63 Yu Liangdeng, Saweat Intarasiri, Teerasak Kamwanna, Somsorn Singkarat Optimized pre-amorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on insulator................................................................ 93 J.J. Hamilton, K.J. Kirkby Publications resulting from the CRP........................................................................................ 99 List of participants.................................................................................................................. 103 SUMMARY The development of new materials is driven by the high impact of such materials in important areas such as information technology, energy management, environmental protection, and human health. Most of these applications require devices having surface layers and thin film coatings or appropriately doped matrices with dedicated properties and structure. For many applications such accurately configured structures cannot be achieved by thermal diffusion methods. Ion beam methods, on the other hand, offer accurate control of implanted ion/dopant species, and implantation fluence, profile and temperature. They can be used to grow nano- composite materials by ion beam deposition, to create nano-patterned surfaces of materials by ion beam erosion, to introduce impurities into matrices by ion implantation, or to investigate novel properties resulting from impurity–defect interactions. Ion beam modification of materials may be achieved by ion implantation or ion irradiation. These are unique approaches to altering the near surface region of a wide range of solid materials in a manner that is independent of many of the constraints associated with conventional processing methods. Some materials, such as metals and most semiconductors, are rather insensitive to the electronic part of the energy deposition as long as the electronic stopping power remains below a certain critical threshold value. Other materials, for example insulating and dielectric materials such as ionic solids, alkali and silver halides, dielectric glasses and amorphous materials, are quite sensitive to the energy deposited in their electronic systems. The high sensitivity of these materials to ion irradiation makes them particularly attractive for ion beam modification. A comprehensive programme on ion beam modification requires not only facilities for materials production and ion beam implantation/irradiation, but also modern methods of analysis and diagnostics in order to characterize the ion beam induced effects. All these facilities may not be available in one laboratory, but can be achieved by means of collaboration between laboratories and scientists from developed and developing Member States. In the latter case, in particular, with appropriate partnerships with research centres in developed Member States and participation in research networks, research students and scientists have access to world class facilities and are able to take advantage of facility manpower supervision to enhance research development. These issues and concerns impacted upon the research activities in this CRP which were organised into five main areas, namely: (1) Study of crystalline materials (e.g. silicon carbide and diamond) using ion beams; (2) Development of methods and techniques for ion implantation to produce buried layers; (3) Synthesis of sub-micron sized elemental phases and compounds with novel properties; (4)
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