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Focused Ion Beam Implantation As a Tool for the Fabrication of Nano Electromechanical Devices

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Focused Ion Beam Implantation As a Tool for the Fabrication of Nano Electromechanical Devices ADVERTIMENT. Lʼaccés als continguts dʼaquesta tesi queda condicionat a lʼacceptació de les condicions dʼús establertes per la següent llicència Creative Commons: http://cat.creativecommons.org/?page_id=184 ADVERTENCIA. El acceso a los contenidos de esta tesis queda condicionado a la aceptación de las condiciones de uso establecidas por la siguiente licencia Creative Commons: http://es.creativecommons.org/blog/licencias/ WARNING. The access to the contents of this doctoral thesis it is limited to the acceptance of the use conditions set by the following Creative Commons license: https://creativecommons.org/licenses/?lang=en Focused ion beam implantation as a tool for the fabrication of nano electromechanical devices Memoria presentada per optar al títol de Doctor en Ciència de Materials Departament de Física de la Universitat Autònoma de Barcelona AUTOR Jordi Llobet Sixto DIRECTORS Francesc Pérez Murano Instituto de Microelectrónica Barcelona IMB - CNM (CSIC) Xavier Borrisé Nogué Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology TUTOR Jordi Sort Viñas Universitat Autònoma de Barcelona (UAB) 2016 Memòria presentada per aspirar al Grau de Doctor per Jordi Llobet Sixto. Vist i plau dels Directors Dr. Francesc Pérez Murano, Dr. Xavier Borrisé Nogué, i tutor Dr. Jordi Sort Viñas. Director, Director, Tutor, Francesc Pérez Murano Xavier Borrisé Nogué Jordi Sort Viñas Autor Jordi Llobet Sixto Bellaterra, 26 de gener de 2016 En primer lloc voldria agrair el suport, ajuda i direcció al Prof. Francesc Pérez-Murano i al Dr. Xavier Borrisé Nogué. A en Xevi voldria agrair-li la con¿anoa Tue sempre m¶ha mostrat des de Tue es va decidir crear l¶jrea de Nanolitogra¿a de la Sala Blanca del IMB-CNM allj l¶any 2006. Amb ell sempre he treballat molt a gust i sempre he pogut comptar amb el seu suport Tuan s¶han presentat di¿cultats o reptes, i sota la seva direc- ció vaig poder realitzar el PFC d¶Enginyeria de Materials (200) i el treball de Mjster de Nanotecnologia (2011). Amb en Francesc i el seu grup també m¶he trobat molt a gust i en un gran ambient de treball on he pogut aprendre moltes coses. També voldria agrair-li al Francesc el fet d¶ ³acollir-me´ al 201 per poder realitzar aTuesta tesis Tue tenia tantes ganes de fer. +an sigut uns anys molt bonics i estimulants. Han tingut un paper molt important en la meva carrera professional i, en particular, en aTuesta tesi doctoral en Marc Sansa i la Gemma 5ius. A banda dels bons moments Tue hem compartit guardo especials records de molts experiments Tue vjrem realitzar junts durant les seves tesis doctorals i Tue han estat clau per encetar aTuesta. Ha sigut un plaer treballar amb vosaltres. Guardo un especial record i ³good vibes´ de tota la gent del grup NanoNEMS, tan els Tue ara hi sou i els Tue ja han aixecat el vol. Tots vosaltres heu estat uns companys magní- ¿cs. Un plaer haver compartit vivències (i també experiments) amb la Laura Evangelio, la Marta Fernindez, l¶Ana Conde, en Joan Bausells, en Matteo Lorenzoni, l¶Albert Alcacer, l¶Angelos StreNlas, l¶Steven Gottlieb així com també ho va ser amb l¶Èlvaro San Paulo, la Nerea Alayo, la Lorea 2ria, la Irene Fernindez, l¶Iñigo Martín, l¶<igezu Mulugeta, en Giordano Tosolini, en Nil Fontanals, la Sophie Verhaeghe, l¶Alex ChuTuitarTui i en Dani 5uso. Moltes coses Tue se sobre el FIB i microscòpia electrònica en general son grjcies a en Jordi Millan. A ell voldria agrair-li tot el suport, els dubtes resolts, la paciència i el gran tracte humj. De vital importjncia és el fet de menjar. I si a sobre pots fer-ho en un ambient distès i de bon rollo encara millor. Agraeixo molt les converses Tue hem tingut, i també el saber es- coltar, de la Marta Duch, la N~ria Torras, l¶Alberto Moreno, en Carlos Seisdedos, en Xavi Mas, la Nuria Torres, la Neus Sabaté, en Juan Pablo Agusil i l¶Ana Sinchez. Ha estat un plaer haver compartit tot aTuest temps amb els companys de sala blanca. No vull oblidar-me de ning~ Tota la gent involucrada a les etapes, processos, manteni- ment,... tot el Tue feu te una gran complexitat tècnica i permet Tue els projectes avancin. He tingut la sort d¶interactuar més a prop durant aTuest temps amb la Marta Gerbolés, la Marta Duch, la Libertad Solé, l¶Ana Sinchez, l¶Alberto Moreno, la María Sinchez, en Jose Calvo, en Josep Montserrat, en MiTuel =abala, la 2ihane Beldarrain, la 5oser Mas, en Carles Mateu, en Josep M Cirera, en Javi Sinchez, en Sergi Sinchez, en Josep Tar- radas, en Xavi Mas, en 5oger Cot, en 5oger Llopis, en José 5us, en José Arias, l¶Antonio García Simon, en Joan Cussó, l¶Antonio Garzón, l¶Antonio Sienz, en David Muñoz, en Marcos Lechón, la Isabel Montero, la Nieves Alonso, la Carme Girbello, la Julia Pérez,... Moltes grjcies a tots I Zant to acNnoZledge our collaborators from the Imperial College of London Emiljana .rali, =ahid Durrani, Mervin Jones and Chen :ang. The time that I spent there, the mea- surements that Ze performed together, as Zell as the discussion of the results, have been a very nice experience. Durant aTuests anys he tingut la sort de colālaborar en treballs i projectes amb gent de diferents grups de recerca. A banda Tue això m¶ha permès aprendre moltes coses, ha estat un plaer compartir amb ells aTuesta experiència. Vull agrair el bon rollo Tue sempre hi ha hagut amb la gent de l¶ICN (l¶Amelia Barreiro, la M José Esplandiu, en Jordi Arbiol, en Joel Moser, l¶Adrian Bachtold, en Benjamin Lassagne) de la UAB (la N~ria Barniol, en Gabriel Abadal, en Francesc Torres, l¶Eloi Cordomí, en Gabriel Vidal, en Jordi Agustí, en Jose Luis Muñoz, en Javier 5odríguez, l¶Aitor Lopeandia, en Pablo Ferrando, la Gemma Garcia, en Jordi Sort, l¶Aida Varea, la Dolors Baró, l¶Enric Menéndez) de l¶ICMAB (en Narcís Mestres, l¶Adrian Carretero, la Jone =abaleta, en Josh MaloZney) de la UB (la Miroslavna .ovylina, l¶Albert 5omano) i també del CNM (la Llibertat Abad, l¶Amador Pérez, en Marcel Placidi, la Francesca Campabadal, en Jose Antonio Plaza). Moltes grjcies a tots vosaltres Voldria agrair tot el suport de la família i amics per aguantar-me durant la realització d¶aTuest treball. ATuest cop si, aTuest és el darrer, el més gros i el de¿nitiu (o almenys de moment ) Als meus pares Jordi i Paloma, al meu germj Albert, als meus avis, tiets, cosins, família política i als amics. A tots ells, als Tue hi son, als Tue son lluny i als Tue ja han marxat. Moltes grjcies per tot. Finalment, agrair la paciència a les dues persones Tue més han hagut de suportar-me durant aTuest ³part´ en min~scules i amb totes les cometes possibles (mai serj compa- rable ). A la Sandra Maya, la meva estimada companya en aTuest viatge Tue anomenem vida, i a la J~lia Llobet, la petitona de la casa Tue ens ha robat el cor. Moltes grjcies a les dues per tot. J~lia, Tue vols Tue et llegeixi un conte" ATuest va de nanotecnologia. RESUM La tesi doctoral titulada “Focused ion beam implantation as a tool for the fabrication of nano electromechanical devices” aborda el repte de la fabricació de ressonadors na- no-mètrics des d’una nova òptica basada en la implantació iònica mitjançant un feix de ions focalitzat (FIB). Aquest nou mètode permet fabricar nano-dispositius suspesos fun- cionals, des del punt de vista elèctric i mecànic, sense necessitat d’utilitzar resina d’una forma i) ràpida i simple, només son necessàries tres etapes de fabricació ii) Àexible, permet de¿nir dispositius amb gran llibertat geomètrica iii) alta resolució, es demostra la fabricació de dispositius suspesos de 4 +m de longitud per 10 nm de diàmetre iv) repro- duwble i v) compatible amb la tecnologia CM2S. Partint d’un xip de silici o S2I (silici - diòxid de silici - silici), el mètode de fabricació co- mença amb un procés d’implantació FIB on es de¿neixen les estructures i les connexions elèctriques del dispositiu. El segon pas consisteix en el gravat humit del silici, on s’ataca el silici que no està protegit per la implantació FIB, permetent la suspensió o alliberació dels dispositius. En aquest estadi, on les estructures ja estan de¿nides, el silici és amorf, conté galāli i no és elèctricament funcional (l a1 1ām). El darrer pas consisteix en un tractament tèrmic a alta temperatura ¿ns a 1000C, en ambient de nitrogen i amb un precursor sòlid de bor on es propicia la recristalālització del silici formant nano-cristalls, dopar el silici amb bor (tipus p) i eliminar el galāli. Aquest tractament a alta temperatura, on les estructures no son oxidades, permet obtenir dispositius elèctricament funcionals (l a10-4 1ām). Els principals resultats obtinguts es poden classi¿car en tres àmbits t Investigació de l’efecte de la implantació amb ions gal·li en el silici, pel que fa tant a aspectes de processament com de propietats nanoelectromecàniques del material. | RESUM En aquest treball hem caracteritzat l’estructura del material en les diferents eta- pes de fabricació i hem caracteritzat elèctrica i electromecànicament els dispo- sitius ¿nals obtinguts pel mètode descrit. t Desenvolupament i optimització del procés de fabricació, especialment pel que respecte al control de dimensions i a la combinació amb altres processos Es mostra el treball realitzat en la optimització dels diferents paràmetres de fa- bricació, des de la posta a punt de la dosi d’ions ¿ns a la selectivitat del gravat.
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