Focused Ion Beam Quanta 200 3D

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FOCUSED ION BEAM QUANTA 200 3D The Quanta 200 3D Dual Beam is a combination of two systems: Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB). The combined power of FIB and SEM has opened a new world of 3 dimensional materials characterization, analysis, and manipulation at the nanoscale. It uses an energetic focused beam of ions as a “nano” milling machine and can mill cross sections and patterns to fabricate any desired device structure. The two different sources (electrons and ions) enable high-resolution imaging of the surface structures. The directed energy from electron and ion beams can also be used for patterning, repairing or prototyping using localized chemical vapor deposition (CVD). The ion beam can be used to slice thin lamella from bulk samples, which are then removed using a Omniprobe micromanipulator. The ion beam can then be used to “weld” the lamella to a 3mm grid for detailed analysis by other characterization instruments such as the transmission electron microscopy (TEM). Quanta 200 3D Dual Beam basic speciﬁ cations: • 2 – 30 kV electron source • 5-30 kV Gallium liquid metal ion source • Maximum specimen dimensions 150 x 100 x 25 mm will allow full stage movements • Ion beam assisted Platinum deposition • Ion beam assisted Carbon deposition • Omniprobe for micro- and nano-manipulation with patterned specimens • Charge neutralizer for SEM images of nonconductive samples • Low vacuum and ESEM mode Contact: Dr. Yusuf Emirov USF College of Engineering Cell: 813.390.1652 4202 East Fowler Avenue NTA102 Fax: 813.974.3610 Tampa, Florida 33620-5350 http://www.nrec.usf.edu.

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Morphological Studies of Focused Ion Beam Induced Tungsten Deposition
Morphological Studies of Focused Ion Beam Induced Tungsten Deposition H. Langfischer, S. Harasek, H. D. Wanzenboeck, B. Basnar, E. Bertagnolli, A. Lugstein Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7/1, 1040 Vienna, Austria A widely used approach to interconnect prototype circuits and to rewire defective circuits is direct writing of metal lines at the backend of the process line by Fig. 1: FIB-SEM image of an ion beam induced CVD means of focused ion beam (FIB) induced deposition. In tungsten deposit on thermal silicon dioxide. this work we investigate the focused ion beam induced chemical vapor deposition process of tungsten focusing After a contiguous tungsten layer has formed on nucleation at the early stages of the formation process, during the initial growth on the SiO2 surface, the further the formation of a contiguous interface, and finally the deposition process is characterized by homological linear growth. The study involves in situ characterization growth of tungsten on a tungsten surface and the thickness of the evolving layer surface employing FIB-secondary of deposited metal correlates linear with the total ion dose. electron microscope (FIB-SEM) imaging. For the In a further step the impact of the average current density experimental studies of the focused ion beam induced j on the deposition yield was determined using tungsten tungsten deposition, a Micrion FIB-2500 system is used films deposited on a tungsten surface. In order to give a + operating with a gallium liquid metal ion source. The Ga concise interpretation of the experimental findings a ions are extracted from a small local region of a gallium simple analytic model describing the deposition process is 2 droplet and then collimated and focused to an ion beam by used.
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