Information Storage for the Broadband Network Era - Fujitsu’S Challenge in Hard Disk Drive Technology - Vyoshimasa Miura
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3D Product Codes for Magnetic Tape Recording Roy D
TMRC 2016 August 17 – 19, 2016 | Stanford, California Sponsored by: IEEE Magnetics Society Co-sponsored by: Center for Magnetic Nanotechnology (Stanford University) Computer Mechanics Lab (UC Berkeley) Center for Memory and Recording Research (UC San Diego) Center for Materials for Information Technology (U of Alabama) Center for Micromagnetics & Information Technologies (U of Minnesota) Data Storage Systems Center (Carnegie Mellon University) Corporate sponsors: Western Digital Corporation Seagate Technology Headway Technologies AVP Technology Stanford University presents TMRC 2016 August 17-19, 2016 │ Stanford, California TMRC 2016 will focus on “Enhanced future recording technologies for hard disk drives beyond 10 TByte capacity”, spin transfer torque random access memory (STT-RAM), and other related topics. Approximately 36 invited papers of the highest quality will be presented orally at the conference and will later be published in the IEEE Transactions on Magnetics. Poster sessions will also be held consecutive to the oral sessions and will feature posters from the invited speakers and a limited number of contributed posters. The contributed posters will be eligible for publication in the IEEE Transactions on Magnetics after peer review. Topics to be presented include: Perpendicular Magnetic Recording at More Than 1Tbit/in2 (Readers, Writers, Tribology, Signal Processing) Two-Dimensional Magnetic Recording Heat Assisted Magnetic Recording MRAM TMRC 2016 Organization Conference Chair Poster Co-Chairs Jinshan Li, Western Digital Shafa Dahandeh, Western Digital Baoxi Xu, DSI Program Co-Chairs Yoichiro Tanaka, Toshiba Publicity Co-Chairs Fatih Erden, Seagate Technology Jan-Ulrich Thiele, Seagate Technology Hans Richter, Western Digital Qing Dai, HGST Publication Co-Chairs Treasurer Michael Alex, Western Digital Chris Rea, Seagate Technology Ganping Ju, Seagate Technology Local Chair Shan X. -
Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies. -
Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
Magnetic storage- From magnetic tape to HDD Juhász Levente 2016.02.24 Table of contents 1. Introduction 2. Magnetic tape 3. Magnetic-core memory 4. Bubble memory 5. Hard disk drive 6. Applications, future prospects 7. References 1. Magnetic storage - introduction Magnetic storage: Recording & storage of data on a magnetised medium A form of „non-volatile” memory Data accessed using read/write heads Widely used for computer data storage, audio and video applications, magnetic stripe cards etc. 1. Magnetic storage - introduction 2. Magnetic tape 1928 Germany: Magnetic tape for audio recording by Fritz Pfleumer • Fe2O3 coating on paper stripes, further developed by AEG & BASF 1951: UNIVAC- first use of magnetic tape for data storage • 12,7 mm Ni-plated brass-phosphorus alloy tape • 128 characters /inch data density • 7000 ch. /s writing speed 2. Magnetic tape 2. Magnetic tape 1950s: IBM : patented magnetic tape technology • 12,7 mm wide magnetic tape on a 26,7 cm reel • 370-730 m long tapes 1980: 1100 m PET –based tape • 18 cm reel for developers • 7, 9 stripe tapes (8 bit + parity) • Capacity up to 140 MB DEC –tapes for personal use 2. Magnetic tape 2014: Sony & IBM recorded 148 Gbit /squareinch tape capacity 185 TB! 2. Magnetic tape Remanent structural change in a magnetic medium Analog or digital recording (binary storage) Longitudinal or perpendicular recording Ni-Fe –alloy core in tape head 2. Magnetic tape Hysteresis in magnetic recording 40-150 kHz bias signal applied to the tape to remove its „magnetic history” and „stir” the magnetization Each recorded signal will encounter the same magnetic condition Current in tape head proportional to the signal to be recorded 2. -
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UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. -
The Effects of Magnetic Fields on Magnetic Storage Media Used in Computers
NITED STATES ARTMENT OF MMERCE NBS TECHNICAL NOTE 735 BLICATION of Magnetic Fields on Magnetic Storage Media Used in Computers — NATIONAL BUREAU OF STANDARDS The National Bureau of Standards^ was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation^—Nuclear Radiation^—Applied Radiation-—Quantum Electronics' Electromagnetics^—Time and Frequency'—Laboratory Astrophysics'—Cryo- genics'. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials. -
49. Magnetic Information-Storage Materials
1185 49.Magnetic Magnetic Information-Storage Materials Info Charbel Tannous, R. Lawrence Comstock† 49.1 Magnetic Recording Technology......... 1186 The purpose of this chapter is to review the cur- 49.1.1 Magnetic Thin Films........................... 1187 rent status of magnetic materials used in data 49.1.2 The Write Head.................................. 1189 storage. The emphasis is on magnetic materials 49.1.3 Spin-Valve Read Head........................ 1192 used in disk drives and in the magnetic random- 49.1.4 Longitudinal Recording Media (LMR) ... 1199 access memory (MRAM) technology. A wide range 49.1.5 Perpendicular Magnetic Recording ...... 1205 of magnetic materials is essential for the advance of magnetic recording both for heads and me- 49.2 Magnetic Random-Access Memory ..... 1215 dia, including high-magnetization soft-magnetic 49.2.1 Tunneling Magnetoresistive Heads ...... 1218 materials for write heads, antiferromagnetic al- 49.3 Extraordinary Magnetoresistance loys with high blocking temperatures and low (EMR) ............................................... 1220 corrosion propensity for pinning films in giant- 49.4 Summary.......................................... 1220 magnetoresistive (GMR) sensors and ferromagnetic alloys with large values of giant magnetoresis- References................................................... 1220 tance. For magnetic recording media, the advances are in high-magnetization metal alloys with large values of switching coercivity. A significant lim- recording in order to progress steadily toward areal itation to magnetic recording is found to be the densities well above 1012 bit=in2 (1 Tbit=in2 or superparamagnetic effect and advances have been 1000 Gbit=in2). While an MRAM cell exploits some made in multilayer ferromagnetic films to re- of the materials used in GMR sensors, its basic duce the impact of the effect, but also to allow component is the magnetic tunneling junction in high-density recording have been developed. -
Memory and Storage Systems
CHAPTER 3 MEMORY AND STORAGE SYSTEMS Chapter Outline Chapter Objectives 3.1 Introduction In this chapter, we will learn: 3.2 Memory Representation ∑ The concept of memory and its 3.3 Random Access Memory representation. 3.3.1 Static RAM ∑ How data is stored in Random Access 3.3.2 Dynamic RAM Memory (RAM) and the various types of 3.4 Read Only Memory RAM. 3.4.1 Programmable ROM ∑ How data is stored in Read Only Memory 3.4.2 Erasable PROM (ROM) and the various types of ROM. 3.4.3 Electrically Erasable PROM ∑ The concept of storage systems and the 3.4.4 Flash ROM various types of storage systems. 3.5 Storage Systems ∑ The criteria for evaluating storage 3.6 Magnetic Storage Systems systems. 3.6.1 Magnetic Tapes 3.6.2 Magnetic Disks 3.7 Optical Storage Systems 3.1 INTRODUCTION 3.7.1 Read only Optical Disks 3.7.2 Write Once, Read Many Disks Computers are used not only for processing of data 3.8 Magneto Optical Systems for immediate use, but also for storing of large 3.8.1 Principle used in Recording Data volume of data for future use. In order to meet 3.8.2 Architecture of Magneto Optical Disks these two specifi c requirements, computers use two 3.9 Solid-State Storage Devices types of storage locations—one, for storing the data 3.9.1 Structure of SSD that are being currently handled by the CPU and the 3.9.2 Advantages of SSD other, for storing the results and the data for future 3.9.3 Disadvantages of SSD use. -
Skylight—A Window on Shingled Disk Operation
Skylight—A Window on Shingled Disk Operation Abutalib Aghayev and Peter Desnoyers, Northeastern University https://www.usenix.org/conference/fast15/technical-sessions/presentation/aghayev This paper is included in the Proceedings of the 13th USENIX Conference on File and Storage Technologies (FAST ’15). February 16–19, 2015 • Santa Clara, CA, USA ISBN 978-1-931971-201 Open access to the Proceedings of the 13th USENIX Conference on File and Storage Technologies is sponsored by USENIX Skylight—A Window on Shingled Disk Operation Abutalib Aghayev Peter Desnoyers Northeastern University Abstract HGST [10]. Other technologies (Heat-Assisted Magnetic Recording [11] and Bit-Patterned Media [12]) remain in the We introduce Skylight, a novel methodology that combines research stage, and may in fact use shingled recording when software and hardware techniques to reverse engineer key they are released [13]. properties of drive-managed Shingled Magnetic Recording Shingled recording spaces tracks more closely, so they (SMR) drives. The software part of Skylight measures overlap like rows of shingles on a roof, squeezing more tracks the latency of controlled I/O operations to infer important and bits onto each platter [7]. The increase in density comes at properties of drive-managed SMR, including type, structure, a cost in complexity, as modifying a disk sector will corrupt and size of the persistent cache; type of cleaning algorithm; other data on the overlapped tracks, requiring copying to type of block mapping; and size of bands. The hardware part avoid data loss [14–17]. Rather than push this work onto the of Skylight tracks drive head movements during these tests, host file system [18,19], SMR drives shipped to date preserve using a high-speed camera through an observation window compatibility with existing drives by implementing a Shingle drilled through the cover of the drive. -
Fast Read/Write • Non-Volatile • Infinite Endurance
MRAM Magnetoresistive Random Access Memory Fast Read/Write • Non-Volatile • Infinite Endurance High Endurance, Non-volatility Ideal for RAID Applications High Performance, Unlimited En- durance for Industrial and Human Machine Interface Applications Reliability - the Foremost Require- ments in Gaming Systems Performance and Reliability in Demanding Automotive Applications www.everspin.com The MRAM Company Everspin’s State-of-the-Art MRAM Technology How Everspin’s Patented MRAM Memory Technology Works Everspin MRAM is Integrated with Standard CMOS Processing The MTJ device has a low resistance when the magnetic moment of the free layer is parallel to the fixed layer and a high resistance when the free Everspin MRAM is based on magnetic storage elements integrated layer moment is oriented anti-parallel to the fixed layer moment. This with CMOS processing. Each storage element uses a magnetic tun- change in resistance with the magnetic state of the device is an effect nel junction (MTJ) device for a memory cell. known as magnetoresistance, hence the name “magnetoresistive” RAM. Everspin MRAM Technology is Reliable Unlike most other semiconductor memory technologies, the data is stored as a magnetic state rather than a charge, and sensed by measuring The Magnetic Tunnel Junction Storage Element the resistance without disturbing the magnetic state. Using a magnetic state for storage has two main benefits. First, the magnetic polariza- The magnetic tunnel junction (MTJ) storage element is composed tion does not leak away over time like charge does, so the information of a fixed magnetic layer, a thin dielectric tunnel barrier and a free is stored even when the power is turned off. -
Computer/Data Storage Technology
IS 335: Information Technology in Business Lecture Outline Computer/Data Storage Technology Objectives • Describe the distinguishing characteristics of primary and secondary storage • Describe the devices used to implement primary storage • Compare secondary storage alternatives • Describe factors that affect magnetic storage devices • Explain how to choose appropriate secondary storage technologies and devices Storage Device Characteristics • Consist of a read/write mechanism and a storage medium • Storage medium: device or substance that actually holds data – Device controller provides interface between storage device and system bus Storage Device Characteristics (continued) • Speed • Volatility • Access method • Portability • Cost and capacity Speed • Most important characteristic differentiating primary and secondary storage • Primary storage extends the limited capacity of CPU registers • Secondary storage speed influences execution speed • Access time • Blocks and sectors • Data transfer rate = 1 second/access time (in seconds) x unit of data transfer (in bytes) Volatility • Primary storage devices are generally volatile – Cannot reliably hold data for long periods • Secondary storage devices are generally nonvolatile – Holds data without loss over long periods of time Access Method • Serial access (linear) • Random access (direct access) • Parallel access (simultaneous) Portability • Typically implemented in two ways – Entire storage device (USB flash drive) – Storage medium can be removed (DVDs) • Typically results in slower access -
Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: from Device to System
See discussions, stats, and author profiles for this publication at: http://www.researchgate.net/publication/277712760 Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: From Device to System CONFERENCE PAPER · MAY 2015 DOWNLOADS VIEWS 92 16 6 AUTHORS, INCLUDING: Yue Zhang Jacques-Olivier Klein Beihang University(BUAA) Université Paris-Sud 11 53 PUBLICATIONS 173 CITATIONS 140 PUBLICATIONS 555 CITATIONS SEE PROFILE SEE PROFILE Weisheng ZHAO CNRS, Univ. Paris Sud, Beihang University, 155 PUBLICATIONS 908 CITATIONS SEE PROFILE Available from: Weisheng ZHAO Retrieved on: 08 July 2015 Perspectives of Racetrack Memory Based on Current- Induced Domain Wall Motion: From Device to System Yue Zhang1, Chao Zhang3, Jacques-Olivier Klein1, Dafine Ravelosona1, Guangyu Sun3, Weisheng Zhao1,2 Email: [email protected] [email protected] 1Institut d’Electronique Fondamentale, Univ. Paris-Sud/UMR 8622 CNRS, Orsay, France 2Spintronics Interdisciplinary Center, Beihang University, Beijing, China 3Center for Energy-Efficient Computing and Applications, Peking University, Beijing, China Abstract—Current-induced domain wall motion (CIDWM) is Firstly, in order to overcome the issue of thermal stability, regarded as a promising way towards achieving emerging high- materials with perpendicular magnetic anisotropy (PMA) have density, high-speed and low-power non-volatile devices. being intensively studied and can offer various other Racetrack memory is an attractive concept based on this performance improvements compared with those with in-plane phenomenon, which can store and transfer a series of data along magnetic anisotropy, such as lower DW nucleation critical a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous current and higher DW shifting speed [7-8]. -
High Performance Soc Design Using Magnetic Logic and Memory
High Performance SoC Design Using Magnetic Logic and Memory Yahya Lakys, Jacques-Olivier Klein, Daniel Etiemble, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Lionel Torres, Luís Vitório Cargnini, Raphael Martins Brum, Yue Zhang, et al. To cite this version: Yahya Lakys, Jacques-Olivier Klein, Daniel Etiemble, Dafiné Ravelosona, Claude Chappert, et al.. High Performance SoC Design Using Magnetic Logic and Memory. VLSI-SoC: Very Large Scale Integration - System-on-Chip, Oct 2011, Hong Kong, China. pp.10-33, 10.1007/978-3-642-32770- 4_2. hal-01519767 HAL Id: hal-01519767 https://hal.inria.fr/hal-01519767 Submitted on 9 May 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Distributed under a Creative Commons Attribution| 4.0 International License High Performance SoC Design using Magnetic Logic and Memory Weisheng Zhao1, Lionel Torres3, Luís Vitório Cargnini3, Raphael Martins Brum3, Yue Zhang1, Yoann Guillemenet3, Gilles Sassatelli3, Yahya Lakys1, Jacques-Olivier Klein1, Daniel Etiemble2, Dafiné Ravelosona1, and Claude Chappert1 1 IEF - Université Paris-Sud 11 / CNRS 2 LRI - Université Paris-Sud 11 / CNRS [email protected] 3 LIRMM - Université Montpellier 2 / CNRS [email protected] Abstract As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g.