Information Storage for the Broadband Network Era - Fujitsu’S Challenge in Hard Disk Drive Technology - Vyoshimasa Miura

Total Page:16

File Type:pdf, Size:1020Kb

Information Storage for the Broadband Network Era - Fujitsu’S Challenge in Hard Disk Drive Technology - Vyoshimasa Miura UDC 681.327.634 Information Storage for the Broadband Network Era - Fujitsu’s Challenge in Hard Disk Drive Technology - VYoshimasa Miura (Manuscript received October 2, 2001) As the network-computing infrastructure expands around the world, information stor- age systems are becoming key elements of information technology (IT). The amount of original information created in 2000 has been estimated at about 5 EB, and there is now a worldwide information stock of about 100 EB. Commercial models of hard disk drives (HDDs) now have 18 million times the magnetic recording density of the world’s first hard disk drive and are the only candidate solution for storing the bulk of the world’s information stock. In this paper, we analyze the size of the information stock and the future capacity of HDD media. We also describe Fujitsu’s breakthrough tech- nology of synthetic ferrimagnetic media (SFM), which can extend the recording limit to up to 300 Gbit/in2. 1. Introduction will be generated will make storage device tech- Fujitsu has announced an aggressive plan to nology as important as data processing and capitalize on the exploding demand for hard disk transmitting technologies. drive (HDD) products for enterprise servers, work- Analog information has a very limited value stations, and non-traditional applications. The in the network society; however, currently only 3% growth within the compact HDD segment, for ex- of the information stock is in digital form. Among ample, in the emerging market for smaller hard the various storage devices, only HDDs will be able drives in consumer-oriented appliances, audio- to store all of the worldwide information stock in video products, and other non-PC applications, is digital form. strong. To accommodate this new push, Fujitsu The history of Fujitsu’s HDD storage sub- will shift development, manufacturing, and sales system business started in 1965 with the shipment resources away from the 3.5-inch ATA desktop of the first F631. Then, in 1994, Fujitsu entered drive market, which recorded an industry-wide the desktop PC HDD market for desktop PCs by negative growth in the first half of 2001. starting high-volume offshore assembly in South- The evolution of electronics technology in the east Asia. Since then, Fujitsu has become a 20th century enabled great advances in informa- vertically integrated manufacturer of HDDs, in- tion network systems (i.e., computers, telecommu- volved in all aspects: from research and nications equipment, and mass storage). Now, we development to manufacturing of key compo- are approaching the stage when there will be suf- nents.1) The HDD is a typical technology-driven ficient capacity to store the entire worldwide stock device, so the ability to do advanced R&D is es- of information in digital form. We are at the be- sential for maintaining competitiveness in this ginning of the broadband information network era, area. Because of the slump in the PC market, and the enormous amounts of information that Fujitsu has decided to terminate its 3.5-inch ATA FUJITSU Sci. Tech. J.,37,2,p.111-125(December 2001) 111 Y. Miura: Information Storage for the Broadband Network Era - Fujitsu’s Challenge in Hard Disk Drive Technology - HDD business and focus on HDDs for the enter- evolution of these three fundamentals in terms of prise segment (AL-series), mobile HDDs the areal density of hard disk drives, CPU clock (HN-series), 2.5-inch HDDs for desktop PCs, and frequency, and the traffic speed of access lines to emerging HDD application markets.2),3) the home. The values are normalized to the val- An HDD looks like a simple device, but actu- ues in 2000. The HDD business has been driven ally it is an integration of various key components by the expanding PC business, but the current and advanced technologies, for example, giant rapid progress of recording technology has caused magnetoresistive (GMR) heads and inductive some people to say that HDDs are “over-technology write elements, a head positioning servo, spindle products” for PCs. However, to enable the mass motor and actuator mechanisms, drive control and flow of movie information, there will be a strong interface systems, design and manufacturing pro- demand for PC storage capacities exceeding cesses of wafers, low-noise media design, materials 100 GB. HDD video recorders and home servers for heads and media, an ultra-narrow head-to-disk will be big emerging HDD markets in the near spacing, and signal processing. future.6),7) Working in light of the predicted “superpara- Much of our lives is now defined by our rela- magnetic” limit on recording density, Fujitsu has tionship with the Internet. Conventional postal led the academic world by demonstrating record- mail is called “snail mail” because it is much slower breaking densities on a yearly basis. For example, than e-mail, which has become the standard meth- in 1996 we achieved 5 Gbit/in2 and in August od of written communication. Figure 2 shows the 2001 we demonstrated the milestone density of growth of World Wide Web (WWW) sites and e- 106 Gbit/in2.4),5) mail boxes. There are now more than 100 million In this paper, we look at the worldwide infor- WWW sites and 500 million e-mail boxes. It is mation stock and the media that is used to store estimated that between 600 billion and 1100 bil- it. Then, we discuss the future of information stor- lion e-mail messages were sent last year.8) age in the broadband network world. Finally, we There will be a big discussion about whether give an overview of Fujitsu’s latest challenges in local or personal storage will become dominant in advanced magnetic recording technology for a broadband environment. A rapid increase in the HDDs. number of Internet Web sites requires not only This paper refers to a very wide range of num- an increase in the number of network servers, but bers, the meanings of which are as follows: also a huge storage capacity. This requirement MB (Megabyte) = 106 bytes 100 9 GB (Gigabyte) = 10 bytes 100 Mb/s 2 TB (Terabyte) = 1012 bytes 10 300 Gbit/in 15 PB (Petabyte) = 10 bytes 1 CPU clock 18 EB (Exabyte) = 10 bytes 100 MHz 0.1 HDD areal density 2. Emerging broadband 0.01 Relative performance network technology 0.001 Internet (home) transfer ˜ The expansion of high-speed access lines to 0.0001 the home marks the beginning of the broadband 1985 1990 1995 2000 2005 2010 network era. Information storage, processing, and Year transport are three of the fundamentals of infor- Figure 1 mation technology (IT). Figure 1 shows the Performance comparison of key technologies. 112 FUJITSU Sci. Tech. J.,37, 2,(December 2001) Y. Miura: Information Storage for the Broadband Network Era - Fujitsu’s Challenge in Hard Disk Drive Technology - makes high-performance, high-reliability HDDs and they will eventually form the huge network for server applications much more important. computer shown in Figure 4. Personal information storage will also increase. A storage area network (SAN) is a dedicat- Information storage will change the structure of ed, centrally managed, secure information society itself and will occupy a major position in infrastructure that enables any-to-any connec- the social infrastructure. Figure 3 shows an im- tions between servers and storage systems. The age of the future information network era. move to SANs has been motivated by the need to Processors, networks, and information storages manage the dramatically increasing volume of are the key driving force for the broadband era, business data and to mitigate its effect on net- work performance. Distributed computing, client/ 10 000 10 000 server applications, and open systems give today’s 1000 1000 100 100 10 mail boxes (million) Storage ⋅ 10 ˜˜1 ˜˜ 1 0.1 domains Data at rest ⋅ 0.01 0.1 Information storage (PB) Network Processor 0.001 0.01 Contents˜ WWW sites 1995 2000 2005 2010 Data being˜ Data being ˜ Year service˜ ˜ transferred transformed Number of hosts (million) Number of Web sites (million) Number of e-mail boxes (million) Storage amount in surface Web (Pbyte) Storage amount in deep Web (Pbyte) Figure 4 Storage amount in e-mail boxes (Pbyte) Key engines for the information network era. Figure 2 Internet and e-mail growth. Figure 3 Image of information network era. FUJITSU Sci. Tech. J.,37, 2,(December 2001) 113 Y. Miura: Information Storage for the Broadband Network Era - Fujitsu’s Challenge in Hard Disk Drive Technology - enterprises the power to fully integrate hardware sists of the AL-7LE devices, which have 10 krpm and software from different vendors to create sys- drives, 18 to 73 GB capacities, and 3-inch media tems tailored to their specific needs. These and the AL-7LX devices, which have new 15 krpm systems can be fast, efficient, and capable of pro- high-end drives, 18 to 36 GB capacities, and viding a competitive edge.9) 2.75-inch (70 mm diameter) media. The AL-7 se- With the explosive growth of e-business, IT ries devices have Ultra160 SCSI and 2 Gb/s Fibre managers are working hard to keep up with the Channel interfaces.2) We believe the AL-7 series exabytes of new data being created every year. will meet the demands of rapidly growing network They are installing high-performance storage sys- storage systems. tems to meet the demands for smaller backup windows and greater application availability. To 3. The information stock and improve data access and reduce costs, IT manag- digital storage ers are now seeking innovative ways to simplify In this section we investigate how much in- storage management. The SAN is a promising formation there is in the world and whether it can solution for universal access.
Recommended publications
  • 3D Product Codes for Magnetic Tape Recording Roy D
    TMRC 2016 August 17 – 19, 2016 | Stanford, California Sponsored by: IEEE Magnetics Society Co-sponsored by: Center for Magnetic Nanotechnology (Stanford University) Computer Mechanics Lab (UC Berkeley) Center for Memory and Recording Research (UC San Diego) Center for Materials for Information Technology (U of Alabama) Center for Micromagnetics & Information Technologies (U of Minnesota) Data Storage Systems Center (Carnegie Mellon University) Corporate sponsors: Western Digital Corporation Seagate Technology Headway Technologies AVP Technology Stanford University presents TMRC 2016 August 17-19, 2016 │ Stanford, California TMRC 2016 will focus on “Enhanced future recording technologies for hard disk drives beyond 10 TByte capacity”, spin transfer torque random access memory (STT-RAM), and other related topics. Approximately 36 invited papers of the highest quality will be presented orally at the conference and will later be published in the IEEE Transactions on Magnetics. Poster sessions will also be held consecutive to the oral sessions and will feature posters from the invited speakers and a limited number of contributed posters. The contributed posters will be eligible for publication in the IEEE Transactions on Magnetics after peer review. Topics to be presented include: Perpendicular Magnetic Recording at More Than 1Tbit/in2 (Readers, Writers, Tribology, Signal Processing) Two-Dimensional Magnetic Recording Heat Assisted Magnetic Recording MRAM TMRC 2016 Organization Conference Chair Poster Co-Chairs Jinshan Li, Western Digital Shafa Dahandeh, Western Digital Baoxi Xu, DSI Program Co-Chairs Yoichiro Tanaka, Toshiba Publicity Co-Chairs Fatih Erden, Seagate Technology Jan-Ulrich Thiele, Seagate Technology Hans Richter, Western Digital Qing Dai, HGST Publication Co-Chairs Treasurer Michael Alex, Western Digital Chris Rea, Seagate Technology Ganping Ju, Seagate Technology Local Chair Shan X.
    [Show full text]
  • Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
    Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies.
    [Show full text]
  • Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
    Magnetic storage- From magnetic tape to HDD Juhász Levente 2016.02.24 Table of contents 1. Introduction 2. Magnetic tape 3. Magnetic-core memory 4. Bubble memory 5. Hard disk drive 6. Applications, future prospects 7. References 1. Magnetic storage - introduction Magnetic storage: Recording & storage of data on a magnetised medium A form of „non-volatile” memory Data accessed using read/write heads Widely used for computer data storage, audio and video applications, magnetic stripe cards etc. 1. Magnetic storage - introduction 2. Magnetic tape 1928 Germany: Magnetic tape for audio recording by Fritz Pfleumer • Fe2O3 coating on paper stripes, further developed by AEG & BASF 1951: UNIVAC- first use of magnetic tape for data storage • 12,7 mm Ni-plated brass-phosphorus alloy tape • 128 characters /inch data density • 7000 ch. /s writing speed 2. Magnetic tape 2. Magnetic tape 1950s: IBM : patented magnetic tape technology • 12,7 mm wide magnetic tape on a 26,7 cm reel • 370-730 m long tapes 1980: 1100 m PET –based tape • 18 cm reel for developers • 7, 9 stripe tapes (8 bit + parity) • Capacity up to 140 MB DEC –tapes for personal use 2. Magnetic tape 2014: Sony & IBM recorded 148 Gbit /squareinch tape capacity 185 TB! 2. Magnetic tape Remanent structural change in a magnetic medium Analog or digital recording (binary storage) Longitudinal or perpendicular recording Ni-Fe –alloy core in tape head 2. Magnetic tape Hysteresis in magnetic recording 40-150 kHz bias signal applied to the tape to remove its „magnetic history” and „stir” the magnetization Each recorded signal will encounter the same magnetic condition Current in tape head proportional to the signal to be recorded 2.
    [Show full text]
  • Qt2t0089x7 Nosplash Af5b9567
    UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes.
    [Show full text]
  • The Effects of Magnetic Fields on Magnetic Storage Media Used in Computers
    NITED STATES ARTMENT OF MMERCE NBS TECHNICAL NOTE 735 BLICATION of Magnetic Fields on Magnetic Storage Media Used in Computers — NATIONAL BUREAU OF STANDARDS The National Bureau of Standards^ was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation^—Nuclear Radiation^—Applied Radiation-—Quantum Electronics' Electromagnetics^—Time and Frequency'—Laboratory Astrophysics'—Cryo- genics'. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials.
    [Show full text]
  • 49. Magnetic Information-Storage Materials
    1185 49.Magnetic Magnetic Information-Storage Materials Info Charbel Tannous, R. Lawrence Comstock† 49.1 Magnetic Recording Technology......... 1186 The purpose of this chapter is to review the cur- 49.1.1 Magnetic Thin Films........................... 1187 rent status of magnetic materials used in data 49.1.2 The Write Head.................................. 1189 storage. The emphasis is on magnetic materials 49.1.3 Spin-Valve Read Head........................ 1192 used in disk drives and in the magnetic random- 49.1.4 Longitudinal Recording Media (LMR) ... 1199 access memory (MRAM) technology. A wide range 49.1.5 Perpendicular Magnetic Recording ...... 1205 of magnetic materials is essential for the advance of magnetic recording both for heads and me- 49.2 Magnetic Random-Access Memory ..... 1215 dia, including high-magnetization soft-magnetic 49.2.1 Tunneling Magnetoresistive Heads ...... 1218 materials for write heads, antiferromagnetic al- 49.3 Extraordinary Magnetoresistance loys with high blocking temperatures and low (EMR) ............................................... 1220 corrosion propensity for pinning films in giant- 49.4 Summary.......................................... 1220 magnetoresistive (GMR) sensors and ferromagnetic alloys with large values of giant magnetoresis- References................................................... 1220 tance. For magnetic recording media, the advances are in high-magnetization metal alloys with large values of switching coercivity. A significant lim- recording in order to progress steadily toward areal itation to magnetic recording is found to be the densities well above 1012 bit=in2 (1 Tbit=in2 or superparamagnetic effect and advances have been 1000 Gbit=in2). While an MRAM cell exploits some made in multilayer ferromagnetic films to re- of the materials used in GMR sensors, its basic duce the impact of the effect, but also to allow component is the magnetic tunneling junction in high-density recording have been developed.
    [Show full text]
  • Memory and Storage Systems
    CHAPTER 3 MEMORY AND STORAGE SYSTEMS Chapter Outline Chapter Objectives 3.1 Introduction In this chapter, we will learn: 3.2 Memory Representation ∑ The concept of memory and its 3.3 Random Access Memory representation. 3.3.1 Static RAM ∑ How data is stored in Random Access 3.3.2 Dynamic RAM Memory (RAM) and the various types of 3.4 Read Only Memory RAM. 3.4.1 Programmable ROM ∑ How data is stored in Read Only Memory 3.4.2 Erasable PROM (ROM) and the various types of ROM. 3.4.3 Electrically Erasable PROM ∑ The concept of storage systems and the 3.4.4 Flash ROM various types of storage systems. 3.5 Storage Systems ∑ The criteria for evaluating storage 3.6 Magnetic Storage Systems systems. 3.6.1 Magnetic Tapes 3.6.2 Magnetic Disks 3.7 Optical Storage Systems 3.1 INTRODUCTION 3.7.1 Read only Optical Disks 3.7.2 Write Once, Read Many Disks Computers are used not only for processing of data 3.8 Magneto Optical Systems for immediate use, but also for storing of large 3.8.1 Principle used in Recording Data volume of data for future use. In order to meet 3.8.2 Architecture of Magneto Optical Disks these two specifi c requirements, computers use two 3.9 Solid-State Storage Devices types of storage locations—one, for storing the data 3.9.1 Structure of SSD that are being currently handled by the CPU and the 3.9.2 Advantages of SSD other, for storing the results and the data for future 3.9.3 Disadvantages of SSD use.
    [Show full text]
  • Skylight—A Window on Shingled Disk Operation
    Skylight—A Window on Shingled Disk Operation Abutalib Aghayev and Peter Desnoyers, Northeastern University https://www.usenix.org/conference/fast15/technical-sessions/presentation/aghayev This paper is included in the Proceedings of the 13th USENIX Conference on File and Storage Technologies (FAST ’15). February 16–19, 2015 • Santa Clara, CA, USA ISBN 978-1-931971-201 Open access to the Proceedings of the 13th USENIX Conference on File and Storage Technologies is sponsored by USENIX Skylight—A Window on Shingled Disk Operation Abutalib Aghayev Peter Desnoyers Northeastern University Abstract HGST [10]. Other technologies (Heat-Assisted Magnetic Recording [11] and Bit-Patterned Media [12]) remain in the We introduce Skylight, a novel methodology that combines research stage, and may in fact use shingled recording when software and hardware techniques to reverse engineer key they are released [13]. properties of drive-managed Shingled Magnetic Recording Shingled recording spaces tracks more closely, so they (SMR) drives. The software part of Skylight measures overlap like rows of shingles on a roof, squeezing more tracks the latency of controlled I/O operations to infer important and bits onto each platter [7]. The increase in density comes at properties of drive-managed SMR, including type, structure, a cost in complexity, as modifying a disk sector will corrupt and size of the persistent cache; type of cleaning algorithm; other data on the overlapped tracks, requiring copying to type of block mapping; and size of bands. The hardware part avoid data loss [14–17]. Rather than push this work onto the of Skylight tracks drive head movements during these tests, host file system [18,19], SMR drives shipped to date preserve using a high-speed camera through an observation window compatibility with existing drives by implementing a Shingle drilled through the cover of the drive.
    [Show full text]
  • Fast Read/Write • Non-Volatile • Infinite Endurance
    MRAM Magnetoresistive Random Access Memory Fast Read/Write • Non-Volatile • Infinite Endurance High Endurance, Non-volatility Ideal for RAID Applications High Performance, Unlimited En- durance for Industrial and Human Machine Interface Applications Reliability - the Foremost Require- ments in Gaming Systems Performance and Reliability in Demanding Automotive Applications www.everspin.com The MRAM Company Everspin’s State-of-the-Art MRAM Technology How Everspin’s Patented MRAM Memory Technology Works Everspin MRAM is Integrated with Standard CMOS Processing The MTJ device has a low resistance when the magnetic moment of the free layer is parallel to the fixed layer and a high resistance when the free Everspin MRAM is based on magnetic storage elements integrated layer moment is oriented anti-parallel to the fixed layer moment. This with CMOS processing. Each storage element uses a magnetic tun- change in resistance with the magnetic state of the device is an effect nel junction (MTJ) device for a memory cell. known as magnetoresistance, hence the name “magnetoresistive” RAM. Everspin MRAM Technology is Reliable Unlike most other semiconductor memory technologies, the data is stored as a magnetic state rather than a charge, and sensed by measuring The Magnetic Tunnel Junction Storage Element the resistance without disturbing the magnetic state. Using a magnetic state for storage has two main benefits. First, the magnetic polariza- The magnetic tunnel junction (MTJ) storage element is composed tion does not leak away over time like charge does, so the information of a fixed magnetic layer, a thin dielectric tunnel barrier and a free is stored even when the power is turned off.
    [Show full text]
  • Computer/Data Storage Technology
    IS 335: Information Technology in Business Lecture Outline Computer/Data Storage Technology Objectives • Describe the distinguishing characteristics of primary and secondary storage • Describe the devices used to implement primary storage • Compare secondary storage alternatives • Describe factors that affect magnetic storage devices • Explain how to choose appropriate secondary storage technologies and devices Storage Device Characteristics • Consist of a read/write mechanism and a storage medium • Storage medium: device or substance that actually holds data – Device controller provides interface between storage device and system bus Storage Device Characteristics (continued) • Speed • Volatility • Access method • Portability • Cost and capacity Speed • Most important characteristic differentiating primary and secondary storage • Primary storage extends the limited capacity of CPU registers • Secondary storage speed influences execution speed • Access time • Blocks and sectors • Data transfer rate = 1 second/access time (in seconds) x unit of data transfer (in bytes) Volatility • Primary storage devices are generally volatile – Cannot reliably hold data for long periods • Secondary storage devices are generally nonvolatile – Holds data without loss over long periods of time Access Method • Serial access (linear) • Random access (direct access) • Parallel access (simultaneous) Portability • Typically implemented in two ways – Entire storage device (USB flash drive) – Storage medium can be removed (DVDs) • Typically results in slower access
    [Show full text]
  • Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: from Device to System
    See discussions, stats, and author profiles for this publication at: http://www.researchgate.net/publication/277712760 Perspectives of Racetrack Memory Based on Current-Induced Domain Wall Motion: From Device to System CONFERENCE PAPER · MAY 2015 DOWNLOADS VIEWS 92 16 6 AUTHORS, INCLUDING: Yue Zhang Jacques-Olivier Klein Beihang University(BUAA) Université Paris-Sud 11 53 PUBLICATIONS 173 CITATIONS 140 PUBLICATIONS 555 CITATIONS SEE PROFILE SEE PROFILE Weisheng ZHAO CNRS, Univ. Paris Sud, Beihang University, 155 PUBLICATIONS 908 CITATIONS SEE PROFILE Available from: Weisheng ZHAO Retrieved on: 08 July 2015 Perspectives of Racetrack Memory Based on Current- Induced Domain Wall Motion: From Device to System Yue Zhang1, Chao Zhang3, Jacques-Olivier Klein1, Dafine Ravelosona1, Guangyu Sun3, Weisheng Zhao1,2 Email: [email protected] [email protected] 1Institut d’Electronique Fondamentale, Univ. Paris-Sud/UMR 8622 CNRS, Orsay, France 2Spintronics Interdisciplinary Center, Beihang University, Beijing, China 3Center for Energy-Efficient Computing and Applications, Peking University, Beijing, China Abstract—Current-induced domain wall motion (CIDWM) is Firstly, in order to overcome the issue of thermal stability, regarded as a promising way towards achieving emerging high- materials with perpendicular magnetic anisotropy (PMA) have density, high-speed and low-power non-volatile devices. being intensively studied and can offer various other Racetrack memory is an attractive concept based on this performance improvements compared with those with in-plane phenomenon, which can store and transfer a series of data along magnetic anisotropy, such as lower DW nucleation critical a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous current and higher DW shifting speed [7-8].
    [Show full text]
  • High Performance Soc Design Using Magnetic Logic and Memory
    High Performance SoC Design Using Magnetic Logic and Memory Yahya Lakys, Jacques-Olivier Klein, Daniel Etiemble, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao, Lionel Torres, Luís Vitório Cargnini, Raphael Martins Brum, Yue Zhang, et al. To cite this version: Yahya Lakys, Jacques-Olivier Klein, Daniel Etiemble, Dafiné Ravelosona, Claude Chappert, et al.. High Performance SoC Design Using Magnetic Logic and Memory. VLSI-SoC: Very Large Scale Integration - System-on-Chip, Oct 2011, Hong Kong, China. pp.10-33, 10.1007/978-3-642-32770- 4_2. hal-01519767 HAL Id: hal-01519767 https://hal.inria.fr/hal-01519767 Submitted on 9 May 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Distributed under a Creative Commons Attribution| 4.0 International License High Performance SoC Design using Magnetic Logic and Memory Weisheng Zhao1, Lionel Torres3, Luís Vitório Cargnini3, Raphael Martins Brum3, Yue Zhang1, Yoann Guillemenet3, Gilles Sassatelli3, Yahya Lakys1, Jacques-Olivier Klein1, Daniel Etiemble2, Dafiné Ravelosona1, and Claude Chappert1 1 IEF - Université Paris-Sud 11 / CNRS 2 LRI - Université Paris-Sud 11 / CNRS [email protected] 3 LIRMM - Université Montpellier 2 / CNRS [email protected] Abstract As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g.
    [Show full text]