Pattern-Integrated Interference Lithography
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2 Laser Interference Lithography (Lil) 9
2 LASER INTERFERENCE LITHOGRAPHY (LIL) 9 2 LASER INTERFERENCE LITHOGRAPHY (LIL) Laser interference lithography [3~22] (LIL) is a method to produce periodic structures using two interfering highly-coherent light beams. Typically, light from a source is divided and recombined, forming a periodic intensity pattern that can be recorded by the exposure of a photosensitive substrate. The primary focus of this thesis has been the setting up of a Lloyd’s-Mirror Interferometer. In this chapter, the fundamentals of laser interference lithography will be introduced step by step: The description of the basic theory of LIL, can be found in section 2.1; the working principle of the “Lloyd’s-Mirror Interferometer” and the whole optical setup are introduced in section 2.2; the preparation of the substrates before lithographic exposures and the design of the resist stack for LIL are explained in section 2.3; the aspects of the exposure process are discussed in section 2.4; finally, the structural transfer from the soft resist into a hard substrate by means of reactive ion etching (RIE) and wet chemical etching will be discussed in section 2.5. 2.1 BASIC THEORY: INTERFERENCE OF TWO BEAMS Figure 1: Thomas Young and a laser interference setup adopted from his famous experiment. Thomas Young (1773-1829), first demonstrated the interference of light in 1801 (Figure 1). [23,24] His famous interference experiment gave strong support to the wave theory of 2 LASER INTERFERENCE LITHOGRAPHY (LIL) 10 light. This experiment (diagramed above) shows interference fringes created when a coherent light source is shining through double slits. -
Towards the Ultimate Resolution in Photolithography
Towards the ultimate resolution in photolithography Yasin Ekinci Paul Scherrer Institute 5232 Villigen PSI, Switzerland E-mail: [email protected] Optical lithography has been the driving force of semiconductor device manufacturing for the past 50 years, due to its high throughput, yield, and scalability. As feature sizes shrink and device density increases, predicted and guided by Moore’s Law, new lithography methods are needed to increase the resolution. Currently, optical patterning approaches such as multiple patterning and DUV immersion are reaching their technological and physical limits. Extreme ultraviolet (EUV) lithography at the wavelength of 13.5 nm is the most promising candidate for the future technology nodes [1-2]. Much research has been done on efficient optics, sources, and photoresists for this wavelength. An important tool in this respect is interference lithography (EUV-IL), which is able to pattern features at single digit nm resolution, enabling research for the timely development of EUV resists. Lithographic pattern resolution is ultimately limited by the wavelength of light used. By decreasing the wavelength down to 13.5 nm, the theoretical patterning limit becomes 3.4 nm. Using EUV light, the XIL-II beamline at the Swiss Light Source, Paul Scherrer Institute, is able to pattern features down to 6 nm half-pitch [3-5]. Spatially coherent light with 4% bandwidth from a synchrotron undulator source is incident upon a transmission mask. The mask is composed of diffraction gratings made of metal or inorganic photoresist and a zeroth order photon stop, supported on a silicon nitride membrane. The diffracted beams from the mask then interfere to produce a sinusoidal areal image, which can then be recorded in a photoresist. -
Laser Interference Lithography
In: Lithography: Principles, Processes and Materials ISBN: 978-1-61761-837-6 Editor: Theodore C. Hennessy, pp. 133-148 © 2011 Nova Science Publishers, Inc. The exclusive license for this PDF is limited to personal printing only. No part of this digital document may be reproduced, stored in a retrieval system or transmitted commercially in any form or by any means. The publisher has taken reasonable care in the preparation of this digital document, but makes no expressed or implied warranty of any kind and assumes no responsibility for any errors or omissions. No liability is assumed for incidental or consequential damages in connection with or arising out of information contained herein. This digital document is sold with the clear understanding that the publisher is not engaged in rendering legal, medical or any other professional services. Chapter 5 LASER INTERFERENCE LITHOGRAPHY Henk van Wolferen and Leon Abelmann MESA+ Research Institute for Nanotechnology, University of Twente, Enschede, The Netherlands ABSTRACT In this chapter we explain how submicron gratings can be prepared by Laser Interference Lithography (LIL). In this maskless lithography technique, the standing wave pattern that exists at the intersection of two coherent laser beams is used to expose a photosensitive layer. We show how to build the basic setup, with special attention for the optical aspects. The pros and cons of different types of resist as well as the limitations and errors of the setup are discussed. The bottleneck in Laser Interference Lithography is the presence of internal reflection in the photo-resist layer. These reflections can be reduced by the use of antireflection coatings. -
Materials and Anti-Adhesive Issues in UV-NIL Achille Francone
Materials and anti-adhesive issues in UV-NIL Achille Francone To cite this version: Achille Francone. Materials and anti-adhesive issues in UV-NIL. Materials. Institut National Poly- technique de Grenoble - INPG, 2010. English. tel-00666073 HAL Id: tel-00666073 https://tel.archives-ouvertes.fr/tel-00666073 Submitted on 3 Feb 2012 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THESE DE L’UNIVERSITE DE GRENOBLE Délivrée par l’Institut Polytechnique de Grenoble N° attribué par la bibliothèque |__|__|__|__|__|__|__|__|__|__| T H E S E pour obtenir le grade de DOCTEUR DE L’UNIVERSITE DE GRENOBLE Spécialité : « 2MGE Matériaux, Mécanique, Génie civil, Electrochimie » préparée au Laboratoire des Technologies de la Microélectronique (LTM-CNRS) dans le cadre de l’Ecole Doctorale « I-MEP2 Ingénierie Matériaux Mécanique Energétique Environnement Procéés Production » présentée et soutenue publiquement par Achille FRANCONE Le 9 Décembre 2010 Materials and anti-adhesive issues in UV-NIL Directeur de thèse: BOUSSEY Jumana JURY Président M.me AUZELY-VELTY Rachel Prof. à Université Joseph Fourier, Grenoble (France) Rapporteur M. SCHLATTER Guy Prof. à Université de Strasbourg, Strasbourg (France) Rapporteur M. -
Extreme Ultraviolet Interference Lithography with Incoherent Light
Extreme ultraviolet interference lithography with incoherent light Patrick P. Naulleau,1 Christopher N. Anderson,2 and Stephen F. Horne 3 1 Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 2 Applied Science & Technology Department, University of California, Berkeley, CA 94720 3 Energetiq Technology Inc., Woburn, MA 01801 ABSTRACT In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address this problem, we propose the development of a new interference lithography tool capable of working with standalone incoherent EUV sources. Although EUV interference lithography tools are currently in operation, presently used designs require illumination with a high degree of spatial and/or temporal coherence. This, in practice, limits current systems to being implemented at synchrotron facilities greatly restricting the accessibility of such systems. Here we describe an EUV interference lithography system design capable of overcoming the coherence limitations, allowing standalone high-power broad sources to be used without the need for excessive spatial or temporal filtering. Such a system provides promising pathway for the commercialization of EUV interference lithography tools. Keywords: extreme ultraviolet, lithography, interferometry, coherence 1. INTRODUCTION One of the largest challenges facing the commercialization of EUV lithography [1] is the development of high resolution EUV resists. Progress in this area has been hampered in large part due to the scarcity in availability of high-resolution EUV tools. -
Interference Lithography
Interference Lithography Personnel M. Walsh, J. M. Carter, R. C. Fleming, T. A. Savas, M. L. Schattenburg, and H. I. Smith Sponsorship DARPA and ARO Interference lithography (IL) is the preferred method for satellite applications, gratings produced with this tool fabricating periodic and quasi-periodic patterns that have flown on numerous missions, most notably the must be spatially coherent over large areas. IL is a con- Chandra x-ray astronomy satellite launched in August ceptually simple process where two coherent beams of 1999, which included hundreds of matched, high- interfere to produce a standing wave, which can be precision gratings. recorded in a photoresist. The spatial-period of the grat- ing can be as fine as half the wavelength of the interfer- We operate another system similar to the one shown in ing light, allowing for structures on the order of 100nm Figure 26 based on the 325 nm line of a HeCd laser. This from UV wavelengths, and features as small as 30-40 system functions both as an exposure tool with capabili- nm using a deep UV ArF laser. ties comparable to those described above as well as an analysis tool. Using a technique known as Holographic The NanoStructures Lab has been developing IL tech- Phase-Shifting Interferometry (HPSI), the linearity and nology for close to 30 years. We currently operate 4 dif- spatial phase of gratings produced in this system can be ferent IL systems for a wide variety of applications. One quantitatively measured and mapped with an accuracy system, shown schematically in Figure 26, is run in on the order of parts per million. -
Fabrication of Photonic Nanostructures for Light Harvesting in Solar Cells
Fabrication of photonic nanostructures for light harvesting in solar cells by Amalraj Peter Amalathas BSc (Hons) with First Class in Physics, University of Jaffna A thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy Department of Electrical and Computer Engineering University of Canterbury Christchurch, New Zealand May 2017 Dedicated to my father, mother, sisters, and brothers for their love, endless support and encouragement. i Abstract Reducing optical losses in the solar cells has always been a key challenge in enhancing the power conversion efficiency of the solar cells without increasing significantly the cost. In order to enhance the power conversion efficiency of the solar cells, a number of light trapping schemes have been investigated to manipulate the light inside the absorber layer and to increase the effective optical path length of the light within the absorber layer of a solar cell. In this work, periodic nanopyramid structures were utilized as the light trapping nanostructures in order to improve the performance of the solar cells using low cost maskless laser interference lithography (LIL) and UV nanoimprint lithography (UV- NIL). In addition, a superhydrophobic property of the nanopyramids was explored to add a self-cleaning functionality to the front encapsulation. Firstly, the inverted nanopyramid structures were fabricated on Si substrate by laser interference lithography and subsequent pattern transfer by combined reactive ion etching and KOH wet etching. Maskless LIL was employed as a high-throughput, high resolution and low cost for the fabrication of large scale periodic nanostructures. The periodic inverted nanopyramid structures on a silicon substrate were used as a master mold substrate for the imprint process. -
Large-Area Nanoimprint Lithography and Applications
Chapter 3 Large-Area Nanoimprint Lithography and Applications Hongbo Lan Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.72860 Abstract Large-area nanoimprint lithography (NIL) has been regarded as one of the most prom- ising micro/nano-manufacturing technologies for mass production of large-area micro/ nanoscale patterns and complex 3D structures and high aspect ratio features with low cost, high throughput, and high resolution. That opens the door and paves the way for many commercial applications not previously conceptualized or economically feasible. Great progresses in large-area nanoimprint lithography have been achieved in recent years. This chapter mainly presents a comprehensive review of recent advances in large- area NIL processes. Some promising solutions of large-area NIL and emerging methods, which can implement mass production of micro-and nanostructures over large areas on various substrates or surfaces, are described in detail. Moreover, numerous industrial- level applications and innovative products based on large-area NIL are also demon- strated. Finally, prospects, challenges, and future directions for industrial scale large- area NIL are addressed. An infrastructure of large-area nanoimprint lithography is proposed. In addition, some recent progresses and research activities in large-area NIL suitable for high volume manufacturing environments from our Labs are also intro- duced. This chapter may provide a reference and direction for the further explorations and studies of large-area micro/nanopatterning technologies. Keywords: large-area nanoimprint lithography, large-area micro/nanopatterning, full wafer NIL, roller-type NIL, roll-to-plate NIL, roll-to-roll NIL 1. -
A Solid Immersion Interference Lithography System for Imaging
A Solid Immersion Interference Lithography System for Imaging Ultra-High Numerical Apertures with High-Aspect Ratios in Photoresist using Resonant Enhancement from Effective Gain Media Prateek Mehrotra1,**, Chris A. Mack2, Richard J. Blaikie1,* 1The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand 2Department of Chemical Engineering, The University of Texas at Austin, Austin, TX *Current Address: Department of Physics, University of Otago, PO Box 56, Dunedin, New Zealand ABSTRACT In the last year our Solid Immersion Lloyd’s Mirror Interference Lithography (SILMIL) system has proved to be a successful tool for evanescent interferometric lithography (EIL). The initial goal was to use SILMIL in conjunction with the surface plasmon polariton (SPP) surface states at the resist-metal interface. Through this resonance, we aimed to counter the decay of evanescent images created using EIL. By analyzing the theory in greater detail we were able to develop a better understanding of the resonance phenomena. In this paper, details of the design of SILMIL and how one may utilize it to produce ultra-high numerical apertures (NAs) are given, as well as an introduction to the resonance phenomena and the mechanism behind it. We introduce a new method that requires a gain medium (one that has a negative loss) to achieve significant enhancements, and present an effective gain medium by using a high-index dielectric on low-index media. We present results at λ = 405 nm using such an effective gain medium and also provide a feasible design example at the lithography standard λ = 193 nm. -
Contrast Analysis of Polarization in Three-Beam Interference Lithography
applied sciences Article Contrast Analysis of Polarization in Three-Beam Interference Lithography Fuping Peng 1,2 , Jing Du 2, Jialin Du 1,2, Simo Wang 1,2 and Wei Yan 2,* 1 University of Chinese Academy of Sciences, Beijing 100049, China; [email protected] (F.P.); [email protected] (J.D.); [email protected] (S.W.) 2 Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China; [email protected] * Correspondence: [email protected] Abstract: This paper analyzes the effect of polarization and the incident angle on the contrasts of interference patterns in three-beam interference lithography. A non-coplanar laser interference system was set up to simulate the relationship between contrast, beam polarization, and the incident angle. Different pattern periods require different incident angles, which means different contrast losses in interference lithography. Two different polarization modes were presented to study the effects of polarization with different incident angles based on theoretical analysis simulations. In the case of the co-directional component TE polarization mode, it was demonstrated that the pattern contrast decreases with the increase in the incident angle and the contrast loss caused by the polarization angle error also grew rapidly. By changing the mode to azimuthal (TE-TE-TE) polarization, the contrast of the interference pattern can be ensured to remain above 0.97 even though the incident angle is large. In addition, TE-TE-TE mode can accept larger polarization angle errors. This conclusion provides a theoretical basis for the generation of high-contrast light fields at different incident angles, and the conclusion is also applicable to multi-beam interference lithography. -
Sub-50 Nm Patterning by Immersion Interference Lithography Using a Littrow Prism As a Lloyd’S Interferometer
3450 OPTICS LETTERS / Vol. 35, No. 20 / October 15, 2010 Sub-50 nm patterning by immersion interference lithography using a Littrow prism as a Lloyd’s interferometer Johannes de Boor,* Dong Sik Kim, and Volker Schmidt Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany *Corresponding author: deboor@mpi‑halle.mpg.de Received July 27, 2010; revised September 7, 2010; accepted September 7, 2010; posted September 20, 2010 (Doc. ID 132405); published October 12, 2010 We present a simple setup that combines immersion lithography with a Lloyd’s mirror interferometer. Aiming for smaller structure sizes, we have replaced the usual Lloyd’s interferometer by a triangular Littrow prism with one metal-coated side, which acts as a mirror. Because of the higher refractive index of the prism, the wavelength and, thus, the attainable structure sizes, are decreased significantly. Using a laser with a wavelength of 244 nm, we could produce line patterns with a period of less than 100 nm and a width of 45 nm. The introduced setup retains all the advantages of a Lloyd’s mirror interferometer, in particular the flexibility in periodicity. © 2010 Optical Society of America OCIS codes: 120.3180, 120.4610, 120.4640, 220.4241, 220.4610. Laser interference lithography (LIL) is a powerful tool that sity distribution across the sample. The distance between is frequently used for the fabrication of nanostructures [1]. the intensity maxima, the pitch or periodicity pLIL,is Simple line gratings, but also more complex two- or even given by [14] three-dimensional photoresist patterns, can be created λ [2,3]. -
Photolithography (Source: Wikipedia)
Photolithography (source: Wikipedia) For earlier uses of photolithography in printing, see Lithography. For the same process applied to metal, see Photochemical machining. Photolithography (also called optical lithography ) is a process used in microfabrication to selectively remove parts of a thin film (or the bulk of a substrate). It uses light to transfer a geometric pattern from a photomask to a light-sensitive chemical (photoresist, or simply "resist") on the substrate. A series of chemical treatments then engraves the exposure pattern into the material underneath the photoresist. In a complex integrated circuit (for example, modern CMOS), a wafer will go through the photolithographic cycle up to 50 times. Photolithography shares some fundamental principles with photography, in that the pattern in the etching resist is created by exposing it to light, either using a projected image or an optical mask. This step is like an ultra high precision version of the method used to make printed circuit boards. Subsequent stages in the process have more in common with etching than to lithographic printing. It is used because it affords exact control over the shape and size of the objects it creates, and because it can create patterns over an entire surface simultaneously. Its main disadvantages are that it requires a flat substrate to start with, it is not very effective at creating shapes that are not flat, and it can require extremely clean operating conditions. Basic procedure The wafer track portion of an aligner that uses 365 nm ultraviolet light. A single iteration of photolithography combines several steps in sequence. Modern cleanrooms use automated, robotic wafer track systems to coordinate the process.