nanomaterials Article Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films L. R. Nivedita 1, Avery Haubert 2, Anil K. Battu 1,3 and C. V. Ramana 1,3,* 1 Center for Advanced Materials Research, University of Texas at El Paso, 500 West University Avenue, El Paso, TX 79968, USA;
[email protected] (L.R.N.);
[email protected] (A.K.B.) 2 Department of Physics, University of California, Santa Barbara, Broida Hall, Santa Barbara, CA 93106, USA;
[email protected] 3 Department of Mechanical Engineering, University of Texas at El Paso, 500 West University Avenue, El Paso, TX 79968, USA * Correspondence:
[email protected]; Tel.: +1-915-747-8690 Received: 10 May 2020; Accepted: 26 June 2020; Published: 30 June 2020 Abstract: Niobium (Nb) thin films, which are potentially useful for integration into electronics and optoelectronics, were made by radio-frequency magnetron sputtering by varying the substrate temperature. The deposition temperature (Ts) effect was systematically studied using a wide range, 25–700 ◦C, using Si(100) substrates for Nb deposition. The direct correlation between deposition temperature (Ts) and electrical properties, surface/interface microstructure, crystal structure, and morphology of Nb films is reported. The Nb films deposited at higher temperature exhibit a higher degree of crystallinity and electrical conductivity. The Nb films’ crystallite size varied from 5 to 9 ( 1) nm and tensile strain occurs in Nb films as Ts increases. The surface/interface morphology of ± the deposited Nb films indicate the grain growth and dense, vertical columnar structure at elevated Ts. The surface roughness derived from measurements taken using atomic force microscopy reveal that all the Nb films are characteristically smooth with an average roughness <2 nm.