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Home , Pulsed laser deposition

List of Abbreviations

a-C amorphous carbon AFM atomic-force microscope/microscopy AMLCD active matrix LCD APD ablative photodecomposition AR antireflective ASE amplified spontaneous emission BGA ball grid array BN c-BN cubic boron nitride CCD charge-coupled device CE Conformit´e Europ´eenne CEN European Committee for Standardization CFC chlorofluorocarbon CMOS complementary metal oxide semiconductor CVD chemical vapor deposition DLC diamond-like carbon DNA deoxyribonucleic acid DOE diffractive optical elements DoF depth of focus DPE diffractive phase elements DRAM dynamic random access memory DUV 248 nm, 193 nm DUV deep UV EBDW beam direct write EDM electro discharge machining EEA European Economic Area EELS electron-energy loss ELA excimer annealing ELIF excimer-laser-induced fluorescence EMC electromagnetic compatibility EMI electromagnetic interference 424 List of Abbreviations

EPL electron projection lithography EUV extreme UV FBG fiber Bragg grating FDA Food and Drug Administration (U.S.A.) FDM frequency-domain modulation FED field emission displays FEL free-electron laser FEP fluorinated ethylene propylene FHG fourth FSR free spectral range FWHM full width (at) half maximum GDPP gas-discharge-produced GTO gate turn-off HAZ heat-affected zone h-BN hexagonal boron nitride HR highly reflective, high-reflective HVM high-volume manufacturing IC integrated circuit IFTA iterative Fourier transform algorithm IGBT insulated gate bipolar transistor IPL projection lithography ITRS international technology roadmap for semiconductors LASIK laser in-situ keratomileusis LC liquid crystal LCD liquid crystal display LCVD laser-induced CVD LDE laser dry etching LIBS laser-induced breakdown spectroscopy LIBWE laser-induced backside wet etching LIDT laser-induced damage threshold LIF laser-induced fluorescence LIFT laser-induced forward transfer LIGA Lithographie, Galvanik, Abformung = lithography, electroplating, molding LIPAA laser-induced plasma-assisted LPP laser-produced plasma LSC laser-supported combustion LSI large scale integrated LTPS low temperature polysilicon (technology) LVD low voltage directive List of Abbreviations 425

MALDE microwave-assisted LDE MAPLE-DW matrix-assisted evaporation-direct writing MCM multichip modules MMA methyl methacrylate MOPA master oscillator power amplifier MZ Mach-Zehnder (interferometer) µ-TAS micro total analysis system NA numerical aperture OLED organic light-emitting diodes OPC optical proximity correction OPD optical path difference PA polyamide PaCO2 partial arterial pressure CO2 PaO2 partial arterial pressure O2 PC personal computer PC polycarbonate PCB printed circuit board PDMS polydimethyl-siloxane PE polyethylene PED pressure equipment directive PEEK poly-ether ether-keton PES polyester PET polyethylene-terephthalate PFL pulse forming line PI polyimide PLC planar lightwave circuits PLD pulsed laser deposition PMMA polymethyl-methacrylate PP polypropylene ppb parts per billion (10−9) ppm parts per million (10−6) PRK photo refractive keratectomy PSM phase shift mask PTFE polytetrafluoro-ethylene (DuPont: Teflonr ) PTK photo therapeutic keratectomy PU polyurethane PVC polyvinyl-chloride PVD pulsed vapor deposition PSU polysulfon R2P2 Resonant Regulating Pulsed Power supply 426 List of Abbreviations

REM raster electron microscope/microscopy RIE reactive ion etching RGH rare gas halide rms root mean square RP retinitis pigmentosa SCALPEL scattering with angular limitation projection electron-beam lithography SCP surface corona preionization SEM scanning electron microscope (=REM) SEMI Semiconductor Equipment and Materials Institute SLG super lateral growth SLS sequential lateral solidification SMD surface mounted device SMPS switched mode power supply SMT surface mount technology SROMA spatially resolving optical multichannel analyser TAB tape automated bonding ta-C tetrahedral amorphous carbon TE transverse electric TFT thin film transistor THG third harmonic generation TM transverse magnetic TSI top surface imaging UV ultraviolet UV-A spectral region A of the UV UV-B spectral region B of the UV VHNA very high numerical aperture VUV 157 nm–50 nm WC tungsten (wolfram) carbide XRL X-ray lithography XUV 50 nm–1 nm Index

Abbe diffraction limit, 399 active matrix liquid crystal display ablation, 17, 127, 139, 149f, 155, 162, (AMLCD), 306 179f, 187f, 203, 229f, 336f, 365f aircraft cable, 321, 324, 330 rear side ablation, 180, 183 all-solid-state switching, 56 ablation debris, 183, 226, 233f, 249, amorphous carbon (a-C), 335f 269, 271 amplified spontaneous emission (ASE), ablation soot, 238 100, 261 ablation depths, 2, 142, 150, 155, 203f, annealing, 26, 52, 87, 140, 144, 340, 212, 232, 327, 339, 394 306f, 340f ablation of ceramics, 155 arc-free discharge, 49 ablation of diamond, 329 arcing, 49, 52, 54, 75 ablation of glass, 201f, 328 ArF laser, 76, 82f, 166f, 227f, 253, 260, ablation of metals, 151 297, 304, 327, 361 ablation of polymers, polymer ablation, atomic force microscope (AFM), 227, 20, 167, 187, 189, 212f, 228 230f ablation of tissue, 361f attenuator, 122, 128f ablation plume, 151, 190, 224 ablation photodecomposition, 17 bacterial filter, 198 ablative photo decomposition(APD) ball grid array (BGA), 194 139 bar code, 321, 324 ablation rate, 151, 172, 189, 203, 213, batch identification, 321 218, 227, 229f, 394 beam diagnostics, 105, 109, 133f, 225 ablation etch rates, 227 beam divergence, 110 ablation threshold, 142, 165, 192, 222, beam parameter, 107 227, 229, 253, 265, 326 beam profile, 52, 109, 105f, 112, 131, absorbance, 169, 361 133, 135, 187, 244, 311, 317, 390 absorption, 35, 120f, 149, 152, 210, 229, bilumen catheter, 196 256, 285, 298f biocompatibility test, 168 absorption by air, 222, 225 biomimetic matrix, 169 absorption coefficient, 150f, 210, 162, biophotonics, 221f 227, 254, 168, 210, 227, 254, 291, biophotonic chip, 272 299, 330, 344 biophotonics on a chip, 268 absorption depth, 401 birefringence, 231, 254, 257, 259f, 267, absorption depth of EUV radiation, 298f 401 black body radiation, 404 absorption length, 17, 361 bleaching, 321, 323 absorptivity, 188 Boltzmann distribution, 36 activation of dielectrics, 331 boron nitride (c-BN), 335f, 346 428 Index borosilicate glass, 182, 201f contact mask, 156 buried optical waveguide, 254, 264f contamination control system, 64 burst mode operation, 99, 387, 388 controlling refractive index, 253f conversion efficiency (CE), 14, 62. 412, C-C transfer, 53 414f C4 technology, 195 cooling system, 63 capacitive sensor, 162 corpuscular theory, 33 car engines, 351 critical dimension, 98, 304, 399f carbon, 140 cubic boron nitride (c-BN), 335, 346 carbon deposits, 329 current rise time, 53 carbon fiber, 198, 318, 320 customized ablation, 365 carbon (ta-C) film,140, 335f, cylindrical lenses, cylinder optics, 130, castellated electrodes, 271 218, 311 catheter, 167f, 196, 325, 326, 396 central island phenomenon, 365 damage fluence, 120, 121 ceramics, 140, 153f, 170f, 321, 331 damage threshold, 120, 180, 223, 240, channels, 23, 24, 43, 163, 175, 202, 206f, 258 221, 231, 234f, 254, 268 dc resonant, 58, 59, 60 plasma channels, 373 debris, 152, 183, 190f, 203, 214f, 233f, chemical vapor deposition (CVD), 206 253, 269, 404, 412, 414f chrome on quartz, 14 debris filter, 403, 406, 421 chrome films, 240 debris mitigation, 412, 414 chrome layer, 239f deep ultraviolet (DUV), 15, 90, 94, 98, chrome mask, 182, 226, 234, 271 119, 123, 266, 297, 302, 423 chrome-coated optics, 239 DUV lithography, 94, 98 chromophores, 149, 150 deoxyribonucleic acid (DNA), 159, 287 cleaning, 121, 141f, 160, 161, 207, 233, depth of focus (DoF), 91, 132f, 163, 234, 240, 241, 249f, 269, 359, 369 265f, 296f, 302f, 399 cleaning of paintings, 142 detonation waves, 165 cleaning of rotogravure, 160 dielectric mask, 157, 180, 182 cleaning of the laser gas, 62f diamond, 232, 242f, 279, 285, 329f, 335, clearing ratios, 75 341 , 119f, 221, 233, 335f, 385, 394 dielectrical sensor, 162 coatings for X-ray mirrors, 140 diffractive optical elements (DOE), 116, cold ablation, 127, 139, 189, 194 182, 198, 221, 222, 245f, 423 collector mirror, 415, 418, 420 diffractive phase elements (DPE), 182, collector optics, 401, 403, 405f 183 collisional deactivation, 44 direct multiphoton excitation, 376, 380 color centers, 254, 298 discharge arcing, 51 color changes, 322, 323, 393 discharge circuit, 48, 52, 53, 386 combustion analysis, , 351f discharge cross-section, 49, 85f command resonant charging, 60 discharge electrodes, 48f, 78, 86 compaction, 101, 171, 229, 254f, 298 discharge stability, 49, 76, 82, 83 condom leak-testing, 198 discoloration, 321 conflict diamonds, 329 double pulse excitation, 57 conformal scanning, 157 drilling, 4, 17, 25, 28, 128, 140, 143f, Conformit´e Europ´eenne (CE), 64, 423 155, 162f, 187f, 201, 203f, 390 congruent evaporation, 140, 339 contact duct oscillations, 77 lenses, 196 dust, 141 Index 429 dust filtration, 64 XUV, 119, 124, 400 dust precipitator, 64 XUV coatings, 124f DUV, see deep ultraviolet XUV , 126 EUV mask, 402 E95%, 95, 96 EUV microstepper, 401, 412f electrode burn-off, 50, 64 EUV pinhole camera, 410, 411 electrode erosion, 49 EUV scanner, 401, 402, 403, 404, electrode lifetime, 12, 52 415, 418 electrode materials, 51, 52, 64 EUV spectrograph, 410 electrode profile, 51, 83 electrode structures, 49 F2-laser, fluorine laser, 42, 107, 108, electromagnetic compatibility (EMC), 115, 121, 182, 212f, 301, 349 65, 68, 423 F2-laser photosensitivity, 254, 258, 263, electromagnetic interference, (EMI), 265 61, 423 feature size, 90, 91, 92f, 135, 235, 238, electron beam, 81f, 300 279, 295, 297f, 400 electron beam direct write (EBDW), femtosecond , V, 182, 191, 300 279f electron beam evaporation, 415 fertility treatment, 197 electron beam lithography, 301 fiber Bragg grating (FBG), 6, 22, 25, electron densities, 49f, 58, 83 140, 143,144, 181, 223, 243, 258, electroplating, 176 313f EMC directive, 65, 423 field emission displays (FED), 312 EMC standards, 65, 67, 68 flow clearing (ratio), 75, 76 energy dose control, 98f flow loop, 76, 77f engraving, 321f, 329 fluorine passivation, 52 erosion, 22, 52f, 64 flying spot scanning, 366 erosion rate, 51, 64 free electron laser (FEL), 38, 124 etching, 17, 18, 19, 93, 140, 140f, 156, free spectral range (FSR), 96, 261 179f, 228f, 238f, 258f, 295, 302 fuel sprays, 352, 353 etendue, 405, 409, 414, 415, 418, 420, fused silica, 94, 101, 129, 132, 152, 156, 421 179, 180, 182, 183, 188, 221, 227, European Committee for Standardiza- 229f, 279, 287, 298f, 315 tion (CEN), 70 European directives, 65, 68 EUV, see extreme ultraviolet g-line, 92, 296 gas discharge, 11, 41, 51, 82, 402, 419 excimer laser transitions, 41, 42 gas filter, 63, 359 excimer lasers for microlithography, gas lasers, 9, 38, 69 89f, 303 gas lifetime, 11, 50, 88, 388, 397 excimer lasers for medical applications, gas purification, 64 361f gas-discharge-produced plasma exciplexes, 6, 8, 42 (GDPP), 402, 404, 419 excitation rate, 43 GDPP EUV sources, 406, 414, 420 excited dimer, 8, 42 germanosilica, 229, 254, 263, 268 extreme ultraviolet (EUV), 91, 121, glass marking, 144, 328 124f, 300, 399f, 424 glaucoma surgery, 361, 367 EUV lithography, 125, 399f glow discharge instability, 48, 58, 83 EUV sources, 399f Gordon Moore, 89, 295 430 Index gratings, 140, 174, 182, 238, 243, 258, k-factor, 399, 400, 262, 282, 314 kinetic energy, 164, 336, 337, 338, 341, 408 halogen gas loss, 64 kinoforms, 182, 246 halogen injections, 64 KrF laser, 1, 9, 14, 42f, 82f, 84, 97, 99f, harpooning reaction, 43 111f, 112, 126, 144, 161, 169, 172, Hartmann-Shack wavefront sensor, 114 183, 187, 247, 258, 280, 317, 331, heat diffusion length, 152 361, 377 heat exchanger, 63, 81 heat-affected layer , 232 L-C inversion circuit, 55, 56 heat-affected zone (HAZ), 17, 140, 168, lab-on-(a)-chip, 201, 234, 269, 393 193, 228, 231f, 279, 321, 325, 424 large-area ablation, 365 hidden identification marks, 328 laser activation, 331, 333 high-resolution mask imaging, 311 laser angioplasty, 361, 369 high-average-power excimer lasers, 79 laser beam characterization, 105, 116 high-energy lasers, 81 laser cavity, 37, 54 high-power excimer lasers, 59, 75, 130, laser cleaning, 141, 142, 147 307 laser chemical vapor deposition high-repetition-rate, 75, 76, 385 (LCVD), 140, 141, 144, 146 high-repetition-rate excimer lasers, 14, 75, 50, 56, 173, 390 laser dry etching (LDE), 141, 146 high-temperature superconducting , 321 films, 335 laser in-situ keratomileusis (LASIK), high-volume lithography, 14 19, 143, 144, 361, 364 high-volume manufacturing (HVM), laser radiation safety, 65, 70, 43, 400, 421 laser resonator, 37, 94, 133, hole drilling, 17, 187, 192, 197 laser , 140 hollow , 373, 377, 379 laser vision correction, 28, 143, 144 hollow plasma channels, 373 laser-induced backside wet etching homogenized beams, 112 (LIBWE), 179, 180, 243, 247 homogenizer, 112, 130, 133, 159, 187, laser-induced breakdown spectroscopy 311 (LIBS), 142 hyperopic eye, 362 laser-induced chemical vapor deposition (LCVD), 140, 141, 144, 146 i-line, 26, 92, 296 laser-induced damage threshold identification codes, 144, 321, 328 (LIDT), 120 imaging optics, 156, 296, 402 laser-induced fluorescence (LIF), 29, immersion fluid, 91 203, 287, 351, 356 immersion lithography, 121, 221, 399 laser-induced forward transfer (LIFT), implant materials, 169 183, 285 in-band energy meter, 410 laser-induced plasma-assisted ablation incubation, 174, 188, 207, 229, 247, 253, (LIPAA), 180, 243 indirect ablation, 179 laser-produced plasma (LPP), 406, 409, injector channels, 269, 270 412, 417, 421 ink jet nozzles, 25, 127, 144, 167, 322, laser-produced plasma EUV sources, 390 408, 417 interference of multiple beams, 281, 282 LASIK, 19, 143, 144, 361, 364, 424 intermediate focus, 403, 405, 412, 418 leak detectors, 174 intermediate focus power, 414, 421 lenses, 94, 132f, 183, 196, 234 , 267, 394 Index 431

LIGA, 176, 424 micro lenses, 115, 181, 183 light amplification, 6, 36, 124 microlithography, 26, 56, 89, 91,92, 95, line beam optics, 311 98, 102, 127, 143, 144, 295, 303, line narrowing, 94, 97, 103 394 liquid-crystal displays, 243, 306, 309, micro machining, 155, 286, 351, 424 micro-machining distortion, 232 lithium target material, 415 micro-machining workstation, 286 lithography, 5, 12, 27, 71, 89, 93, 100, micro nozzles, 174 140, 401 micro-optics fabrication, 181, 234 lithography equipment, 15, 401 micro parts, 174 lithography lenses, 163 micro reaction systems, 217 logos, 321 micro structuring, 25, 144, 153, 177, long optical pulses, 57, 88 185 long-term testing, 394 micro vias, 193, 194, 196, 222, 269 loss processes, 43, 44, 49 Mie scattering, 352 low-voltage directive, 65, 68, 70 minimum feature size, 92, 400 LPP sources, 404, 417, 421 mixer structures, 218 Moore’s Law, 89, 295 machinery directive, 65, 69, 70 multi-component ceramics, 140 magnetic pulse compression, 54, 56 multichip modules, 17, 194, 425 magnetic self-focusing, 407 multilayer mirrors, 126, 402, 410 magnetic switch, 12, 55, 57, 402 multilayer printed circuit boards marking, 321 (PCBs), 192, 425 marking depth, 324, 330 multilayer-coated mirrors, 401 marking of diamonds, 329 multilayer tool, 410 marking of spectacles, 327 multipass-illuminator, 158 mask fabrication, 10, 156, 185, 222, 238 myopic eyes, 361, 362 mask projection, 11, 128, 134, 156, 172, 201, 211, 216, 244,281, 323 nano-lithography, 5 mask projector, 157 nano-scale fabrication, 279 mask writing, 26, 223, 301 nano-structuring, 5 matrix-assisted pulsed laser nano-structuring with femtosecond evaporation-direct writing excimer laser pulses, 279 (MAPLE-DW), 331, 425 nanofabrication, 183, 221 Max Planck, 11, 12, 33 node, 92f, 121f, 300f, 399f metallization of dielectrics, 331 nozzle, 25, 77, 127f, 144, 163, 174, 196f, metals, 122, 151, 155, 174, 243, 280f, 224, 390, 410, 417 321f, 358 micro channels, 10, 206, 222, 235, 268, one-shot-marking, 330 269 (see also ”channels”) optical fiber, 6, 186, 196, 229, 233, 237, micro-electric mechanical systems 244f, 258f, 275, 313, 314, 359, 368 (MEMS), 183, 221, 233 optical lithography, 89, 91, 119, 126, micro fabrication, 144, 149f, 275, 281 295, 299f, 399f microfluidic channels, 221, 234, 268, optical materials, 119, 132, 182, 243, 269, 271, 274 253, 281, 298f, 385, 395 micro fluidics, 209 optical penetration depth, 150, 152, microfluidic test structure, 175 153, 155, 233, 265, 298 micro gears, 173 optical resolution, 296 micro-lens arrays, 234 optics protection, 416 432 Index organic light-emitting diode (OLED), pump energy densities, 52 312 pump power densities, 43 overshoot behavior, 387 purge systems, 63 Pyrex, 201 parallel hole drilling, 199 particle contamination, 152, 402 radiation-damage, 253 particle theory of light, 33 Raman scattering, 352, 353, 355, 356 particulate reduction, 340 Rayleigh scattering, 352, 356 particulates, 233, 302, 339f reaction channels, 43 passivation, 52, 64, 195f, 295 rear side ablation patterning, 183 pellicle, 302, 303 reduction of particulates, 340, 341, 350 pharmaceuticals, 326 refractive eye surgery, 357, 396 phase elements, 182, 423 refractive index modulation, 314 phase mask method, 314f refractive , 19, 361 phase shift mask (PSM), 300, 425 resists, 20, 98, 176, 226, 242, 298, photo refractive keratectomy (PRK), resonant charging, 58, 59, 60 361, 425 resonant regulating pulsed power, 60 photo therapeutic keratectomy (PTK), restoration, 142 363, 425 reticle, 298, 301, 302, 401, 402 photonic crystals, 279, 282, retina implant, 169 photosensitive fiber, 314 photosensitivity response, 253f safety standards, 64, 65, 68,71 pinch effect, 407 screen electrodes, 49, 51 pinch plasma, 407 selective micro-deposition, 285 Planck’s formula, 404 SEMI standards, 71, 426 plasma cleaning, 64 semiconductor lasers, 22, 38, 39 plume ejection, 288 semiconductor switches, 56, 61 polymer tubes, 216 sensor networks, 313, 318, 319 polymers, 19, 132, 143, 149f, 177f, 201, sequential lateral solidification (SLS), 212f, 221f ,310 310 , 34f, 52 shaping lens surfaces, 234 porous-metal cooling, 413, 415 shock wave, 64, 76, 151, 285 power supply topologies, 59 silica glasses, 228, 233, 254, 266 powerplants, 351, 358 silicon thin films, 306 precipitation system, 64 silicones, 169 precise depth profiling, 179 solid-state lasers, 3, 38, 165, 312, 385 precision orifice, 173 solid-state switch module, 386 preionization, 9, 49f, 85f, 386, 407, 426 solid-state switching, 56, 57 pressure equipment directive, 65, 68 soot, 190, 233 pressure waves, 76, 369 spark preionization, 49, 50, 86 profile of the laser beam, 51 spatial light modulator (SLM), 391 projection lenses, 94, 132, 135 spiker-sustainer circuits, 57, 58 psoriasis, 370 spinnerets, 173 pulse compression techniques, 56 spontaneous emission, 35, 36, 44, 100, pulse forming line (PFL), 57, 425 356, 379 pulse length, 100, 101, 121, 150, 303 SQUID, 140, 171, 185 pulsed laser deposition (PLD), 29, 140, stents, 216 342, 346, 404, 425 step-and-repeat, 157, 387 pulser, 52, 57f stimulated emission, 6, 34, 36, 43, 374 Index 433 stoichiometry of multicomponent tin-vapor-based, 415 targets, 339 trabecular meshwork, 367, 368 strain, 319, 320 trabeculotomy, 367, 368 streamer and arc formation, 48 triatomic gases, 44 stress relaxation, 340, 343, 349 trimming planar lightwave circuits, 261 stroboscopic Schlieren images, 285, 288, 289, 290 Ultra-fast UV Laser Transfer, 285 super-lateral growth (SLG), 309 UV preionization, 9, 49, 86 superhard coatings, 335, 336, 349 UV solid-state lasers, 330 support system, 133 UV-, 119 surface cleaning, 6, 141 surface corona preionization (SCP), 50 -ultraviolet optical tools, 222 surface mount technology, 194 vector marking, 330 surface mounted devices (SMDs), 326 via drilling, 144, 187 surface-discharge pre-ionization, 407 voltage regulation, 60 surface-guided discharges, 50 sustainer, 57, 58 wave theory, 33 switched mode power supply (SMPS), wave-particle duality, 33 58, 61, 62 wavefront analysis, 28, 396 switching technology, 57, 58 wavefront measurement, 114, 115 waveguides, 165, 237, 238, 264, 265 technical combustion, 351, 356 wavelength control, 95 technology nodes, 89, 93, 400 wear-resistant coatings, 339, 343 technology roadmap, 90, 221, 300 Willard H. Bennet, 407 telecommunication components, 181, window contamination, 51 243 wire stripping, 144, test leaks, 174 Wolter telescopes, 401 TFT annealing, 140, 143, 306, Theodore H. Maiman, 6, 35, 39 X-ray, 38, 49, 124, 176, 339, 380 thermo-elastic shock wave, 286, 292 X-ray preionization, 13,87 thick ta-C films, 344, 345 X-ray source, 86, 373 thin film transistors, 26, 306 XeCl laser, 12f, 42f, 82, 85f, 113, 171, threshold fluence, 150, 165, 227, 230, 199, 287, 353, 368, 370 280 XeF, 9f, 42, 144, 187, 322, 331, 356 through-holes, 159, 174, 193, 197, 235 xenon target, 402, 417 thyratron tube, 53 XUV coatings, 124, 126 thyristor-switched compressor, 56 time resolved Schlieren imaging, 287 Z-pinch, 407, 408, 411 Printing and Binding: Strauss GmbH, Mörlenbach