Photocurrent Study of Two Dimensional Materials
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Lecture 12: Photodiode Detectors
Lecture 12: Photodiode detectors Background concepts p-n photodiodes Photoconductive/photovoltaic modes p-i-n photodiodes Responsivity and bandwidth Noise in photodetectors References: This lecture partially follows the materials from Photonic Devices, Jia-Ming Liu, Chapter 14. Also from Fundamentals of Photonics, 2nd ed., Saleh & Teich, Chapters 18. 1 Electron-hole photogeneration Most modern photodetectors operate on the basis of the internal photoelectric effect – the photoexcited electrons and holes remain within the material, increasing the electrical conductivity of the material Electron-hole photogeneration in a semiconductor • absorbed photons generate free electron- h hole pairs h Eg • Transport of the free electrons and holes upon an electric field results in a current 2 Absorption coefficient Bandgaps for some semiconductor photodiode materials at 300 K Bandgap (eV) at 300 K Indirect Direct Si 1.14 4.10 Ge 0.67 0.81 - 1.43 kink GaAs InAs - 0.35 InP - 1.35 GaSb - 0.73 - 0.75 In0.53Ga0.47As - 1.15 In0.14Ga0.86As - 1.15 GaAs0.88Sb0.12 3 Absorption coefficient E.g. absorption coefficient = 103 cm-1 Means an 1/e optical power absorption length of 1/ = 10-3 cm = 10 m Likewise, = 104 cm-1 => 1/e optical power absorption length of 1 m. = 105 cm-1 => 1/e optical power absorption length of 100 nm. = 106 cm-1 => 1/e optical power absorption length of 10 nm. 4 Indirect absorption Silicon and germanium absorb light by both indirect and direct optical transitions. Indirect absorption requires the assistance of a phonon so that momentum and energy are conserved. -
Photo Detectors
Module 9 : Photo Detectors Lecture : Principle of Photo Detection Part-I Objectives In this lecture you will learn the following Learn about the principle of optical detection. Know various optical detectors like photodiodes, p-i-n diodes and avalanche diodes. Define figures of merit of the detectors. Know about different sources of noise in detectors and the significance of signal to noise ratio. 9.1 INTRODUCTION : A photodetector is a device which absorbs light and converts the optical energy to measurable electric current. Detectors are classified as Thermal detectors Photon detectors Thermal detectors : When light falls on the device, it raises its temperature, which, in turn, changes the electrical properties of the device material, like its electrical conductivity. Examples of thermal detectors are thermopile (which is a series of thermocouples), pyroelectric detector etc. Photon detectors : Photon detectors work on the principle of conversion of photons to electrons. Unlike the thermal detectors, such detectors are based on the rate of absorption of photons rather than on the rate of energy absorption. However, a device may absorb photons only if the energy of incident photons is above a certain minimum threshold. Photon detectors, in terms of the technology, could be based on Vacuum tubes - e.g. photomultipliers Semiconductors - e.g. photodiodes For optical fiber applications, semiconductor devices are preferred because of their small size, good responsivity and high speed. 9.2 Physical Processes in Light Detection Detection of radiation is essentially a process of its interaction with matter. Some of the prominent processes are s smallphotoconductivity photovoltaic effect photoemissiveeffect 9.2.1Photoconductivity : A consequence of small band gap ( ) in semiconductors is that it is possible to generate additional carriers by illuminating a sample of semiconductor by a light of frequency greater than . -
PHOTOMULTIPLIER TUBES Principles & Applications
PHOTOMULTIPLIER TUBES principles & applications Re-edited September 2002 by S-O Flyckt* and Carole Marmonier**, Photonis, Brive, France *Email: [email protected] **Email: [email protected] i FOREWORD For more than sixty years, photomultipliers have been used to detect low-energy photons in the UV to visible range, high-energy photons (X-rays and gamma rays) and ionizing particles using scintillators. Today, the photomultiplier tube remains unequalled in light detection in all but a few specialized areas. The photomultiplier's continuing superiority stems from three main features: — large sensing area — ultra-fast response and excellent timing performance — high gain and low noise The last two give the photomultiplier an exceptionally high gain x bandwidth product. For detecting light from UV to visible wavelengths, the photomultiplier has so far successfully met the challenges of solid-state light detectors such as the silicon photodiode and the silicon avalanche photodiode. For detecting high-energy photons or ionizing particles, the photomultiplier remains widely preferred. And in large-area detectors, the availability of scintillating fibres is again favouring the use of the photomultiplier as an alternative to the slower multi-wire proportional counter. To meet today's increasingly stringent demands in nuclear imaging, existing photomultiplier designs are constantly being refined. Moreover, for the analytical instruments and physics markets, completely new technologies have been developed such as the foil dynode (plus its derivative the metal dynode) that is the key to the low-crosstalk of modern multi-channel photomultipliers. And for large detectors for physics research, the mesh dynode has been developed for operation in multi-tesla axial fields. -
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes Sarah Riazimehra,c, Satender Katariaa,c,*, Rainer Bornemanna, Peter Haring Bolivara, Francisco Javier Garcia Ruizb, Olof Engströma, Andres Godoyb, Max C. Lemmea,c,* a University of Siegen, School of Science and Technology, Department of Electrical Engineering and Computer Science, Hölderlinstr. 3, 57076 Siegen, Germany b Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada, Spain c RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, Chair for Electronic Devices, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany *email: [email protected], [email protected] Abstract Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO2)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO2 adjacent to the Schottky junction of G/Si. A certain threshold voltage (VT) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO2 by the formation of an inversion layer in Si. Our findings contribute to a basic understanding of graphene / semiconductor hybrid devices which, in turn, can help in designing efficient optoelectronic devices and systems based on such 2D/3D heterojunctions. -
Extremely Efficient Photocurrent Generation in Carbon Nanotube Photodiodes Enabled by a Strong Axial Electric Field
Extremely efficient photocurrent generation in carbon nanotube photodiodes enabled by a strong axial electric field Daniel R. McCulley1, Mitchell J. Senger1, Andrea Bertoni2, Vasili Perebeinos3, Ethan D. Minot1* 1Department of Physics, Oregon State University, Corvallis, Oregon 97331, USA 2Istituto Nanoscienze-CNR, Via Campi 213a, I-41125 Modena, Italy 3Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA Abstract Carbon nanotube (CNT) photodiodes have potential to convert light into electrical current with high efficiency. However, previous experiments have revealed photocurrent quantum yield (PCQY) well below 100%. In this work, we show that axial electric field increases the PCQY of CNT photodiodes. In optimal conditions our data suggest PCQY > 100%. We studied, both experimentally and theoretically, CNT photodiodes at room temperature using optical excitation corresponding to the S22, S33 and S44 exciton resonances. The axial electric field inside the pn junction was controlled using split gates that are capacitively coupled to the suspended CNT. Our results give new insight into the photocurrent generation pathways in CNTs, and the field dependence and diameter dependence of PCQY. Keywords: carbon nanotube, exciton dissociation, carrier multiplication, scanning photocurrent microscopy Main Text The performance of optoelectronic devices depends critically on the relaxation pathways available to energetic charge carriers. In nanomaterials, these relaxation pathways can differ dramatically from traditional bulk semiconductors. For example, substantial effort has focused on engineering multiple exciton generation pathways in quantum dots (QDs) to optimize performance for photovoltaic cells.1–5 Advances in QD device design have led to the experimental realization of internal quantum efficiency greater than 100% when ℏ휔 ≳ 3Eg where 6–8 Eg is the band gap of the light-absorbing material. -
Optical Detectors
Optical Detectors Wei-Chih Wang Department of Power Mechanical Engineering National Tsing Hua University w.wang Photodiodes and Phototransistors – Photodiodes are designed to detect photons and can be used in circuits to sense light. – Phototransistors are photodiodes with some internal amplification. Note: Reverse current flows through the photodiode when it is sensing light. If photons excite carriers in a reverse- biased pn junction, a very small current proportional to the light intensity flows. The sensitivity depends on the wavelength of light. Phototransistor Light Sensitivity The current through a phototransistor is directly proportional to the intensity of the incident light. Semicoductor types (interval photoemission) P-N junction (no bias, short circuit) 1. Absorbed h excited e from valence to conduction, resulting in the creation of e-h pair 2. Under the influence of a bias voltage these carriers move through the material and induce a current in the external circuit. 3. For each electron-hole pair created, the result is an electron flowing in the circuit. w.wang Photodiode Operation A photodiode behaves as a photocontrolled current source in parallel with a semiconductor diode and is governed by the standard diode equation where I is the total device current, I p is the photocurrent, Idk is the dark current (leakage current), V0 is the voltage across the diode junction, q is the charge of an electron, k is Two significant features to note from both Boltzmann's constant, and T is the the curve and the equation are that the temperature in degrees Kelvin. photogenerated current (Ip) is additive to the diode current, and the dark current is merely the diode's reverse leakage current. -
Photodetectors I
Electro-Optics Technology, Inc. Photodetectors I. Introduction EOT Photodetectors are suitable for a variety of pulsewidth measurement and pulse profiling applications. ET series photodetectors use PIN photodiodes and a reverse bias. These photodiodes utilize the photoelectric effect to convert light energy into an electrical current. The reverse bias consists of either 3 V lithium cell(s) or a wall plug-in power supply, depending on the amount of bias voltage needed and the intended application of the photodetector. All photodetectors contain their own BNC or SMA output connector. Connecting the photodetector to an oscilloscope and terminating into 50 Ω at the oscilloscope is all that is required for operation. Most of EOT's photodetectors can be fitted with FC fiber optic connectors for use with fiber pigtailed light sources. II. Amplified Photodetectors EOT's Amplified Photodetectors also utilize PIN photodiodes, however, these photodiodes are used in conjunction with high speed transimpedance amplifiers. These transimpedance amplifiers greatly enhance the sensitivity of the photodetectors, allowing light levels as low as 100 nW to be measured. Typical gain in EOT's amplified photodetectors is 26 dB. It should be noted that EOT's amplified photodetectors are AC coupled and have a low frequency cutoff of 30 kHz. III. Applications A. Measuring the pulsewidth or viewing the pulse profile of Q-switched lasers. B. Monitoring the output of mode-locked lasers. C. Viewing the rapid modulation of diode lasers and externally-modulated CW laser pulses. D. Beamfinding/alignment of CW and pulsed lasers. E. Large area photodetectors can be used as power meters by using Ohm's Law to calculate power levels. -
PHOTODETECTORS.Pdf
PHOTODETECTORS Dragica Vasileska Professor Arizona State University Optical Spectrum What is a Photodetector? • Converts light to electrical signal – Voltage – Current • Response is proportional to the power in the beam Classification of Photodetectors • Semiconductor based – Photovoltaic/ Photoconductive - Photo generated EHP - bulk semiconductor - light dependent resistor - p-n junction, PIN • Photoemissive - photoelectric effect based - incident photons free electrons - used in vacuum photodiodes, PMTs More details Photodiodes are semiconductor devices with a p–n junction or p–i–n structure (i = intrinsic material) ( → p–i–n photodiodes ), where light is absorbed in a depletion region and generates a photocurrent. Such devices can be very compact, fast, highly linear, and exhibit a high quantum efficiency (i.e., generate nearly one electron per incident photon ) and a high dynamic range, provided that they are operated in combination with suitable electronics. A particularly sensitive type is that of avalanche photodiodes , which are sometimes used even for photon counting . • Metal–semiconductor–metal (MSM) photodetectors contain two Schottky contacts instead of a p–n junction. They are potentially faster than photodiodes, with bandwidths up to hundreds of gigahertz. • Phototransistors are similar to photodiodes, but exploit internal amplification of the photocurrent. They are less frequently used than photodiodes. • Photoresistors are also based on certain semiconductors, e.g. cadmium sulfide (CdS). They are cheaper than photodiodes, but they are fairly slow, are not very sensitive, and exhibit a strongly nonlinear response. Source http://www.rp photonics.com/photodetectors.html More Details … • Photomultipliers are based on vacuum tubes. They can exhibit the combination of an extremely high sensitivity (even for photon counting ) with a high speed. -
The Phys of Solar Cells
March 12, 2003 15:18 WSPC/The Physics of Solar Cells psc Chapter 1 Introduction 1. Introduction 1.1. Photons In, Electrons Out: The Photovoltaic Effect 1.1 PhSolarotons photoin, electronvoltaics ouenergyt: The Phconotovolversiontaic iseffecta one-step conversion process which generates electrical energy from light energy. The explanation relies on ideas Solar photovoltaic energy conversion is a one-step conversion process which generates electrical energy from quantum theory. Light is made up of packets of energy, called photons, from light energy. The explanation relies on ideas from quantum theory. Light is made up of packets of energy, whosecalled photenergyons, depwhosendse energonlyy depenupondsthe onlfrequencyy upon the ,forrequcolour,ency, orof coltheourligh, of t.theThe light. The energy energyof visibleof phvisibleotons isphotons sufficientis tosufficien excite electront to excites, bounelectrons,d into solids,b oundup to hinigtohersolids, energy levels where thupey toare highermore freeenergy to movleve. Aelsn exwheretreme extheyampleare of morethis is thfreee phtootoelectricmove. Aneffect,extreme the celebrated experimexampleent which ofwathiss explisaithened photoby Einelectricstein in 1905,effect, whtheere celebratedblue or ultravexpioleeriment light provt whicidesh enough energy fwoasr electronexplaineds to escapeby Einstein completelyin f1905,rom thewhere surfaceblue of a ormetal.ultra Normvioletally,ligh whent prolighvidest is absorbed by matter,enough photonenergys are givforen uelectronsp to excite electronto escaps toe hcompletelyigher energy fromstates wtheithinsurface the material,of a but the excited metal.electronNormallys quickly relax, when backligh tot thiseirabsorb grounded state.by matter,In a photovphotonsoltaic devareice,giv henowupever,to there is some buexciteilt-in asyelectronsmmetry wtohichhigher pulls energythe excitedstates electrowithinns awtheay bematerial,fore they canbut relax,the excitedand feeds them them to an external circuit. -
Materials Aspects in Spin-Coated Films for Polymer Photovoltaics |
Ana Sofia Anselmo | Materials aspects in spin-coated films for polymer photovoltaics | Ana Sofia Anselmo | Materials Materials aspects in spin-coated films for polymer photovoltaics Materials aspects in For polymer photovoltaics to become a viable technology, three main areas must be developed: processing, efficiency and stability. A deeper understanding of the fundamental relation between film preparation, final film morphology spin-coated films for and device performance is essential in order to understand the influence of the active layer structure on each step of photovoltaic performance and establish polymer photovoltaics fabrication strategies leading to more efficient solar cells. Moreover, elucidating and controlling the mechanisms of degradation is crucial for the development of commercially viable devices. In this work, the morphology of polyfluorene:fullerene blend films and its Ana Sofia Anselmo influence on the performance of polymer photovoltaic devices was studied, as well as the photostability of fullerene films in air. All blend films showed polymer-enriched surfaces, even in the cases with homogeneous distributions in the bulk. Side chain engineering of the polymer led to gradual changes in the 2013:3 compositional variations perpendicular to the surface, and to small variations in the photocurrent. Photostability studies in air showed that the unprotected surfaces of fullerene films underwent severe damages at the molecular level, already after a few hours of exposure to white light. ISBN 978-91-7063-475-8 Faculty of -
Photomultiplier Handbook
Contents 1. lntroduction............................................................... 3 Early development, photoemitter and secondary-emitter development, applications development, photomultiplier and solid-state detectors compared 2. Photomultiplier Design . , . 10 Photoemission, practical photocathode materials, opaque and semitransparent photocathodes, glass transmission and spectral response, thermionic emission, secondary emission, time tag in photoemission and secondary emission 3. Electron Optics of Photomultipliers , . 26 Electron-optical design considerations, design methods for photomultiplier electron optics, specific photomultiplier electron-optical configurations, anode configurations 4. Photomultiplier Characteristics . , . 36 Photocathode-related characteristics, gain-related characteristics, dark current and noise, time effects, pulse counting, scintillation counting, liquid scintillation counting, environmental effects 5. Photomultiplier Applications . 80 Summary of selection criteria, applied voltage considerations, mechanical considerations, optical considera- tions, specific photomultiplier applications Appendix A. Typical Photomultiplier Applications and Selection Guide . 119 Appendix B.Glossary of Terms Related to Photomultiplier lubes and Their Applica- I . 125 Appendix C.Spectral Response Designation Systems . 132 Appendix D. Photometric Units and Photometric-to-Radiant Conversion............. I 37 Appendix E.Spectral Response and Source-Detector Matching......... .......... I 43 Appendix F.Radiant Energy and -
Photovoltaic Effect: an Introduction to Solar Cells
Sustainable Energy Science and Engineering Center Photovoltaic Effect: An Introduction to Solar Cells Text Book: Sections 4.1.5 & 4.2.3 References: The physics of Solar Cells by Jenny Nelson, Imperial College Press, 2003. Solar Cells by Martin A. Green, The University of New South Wales, 1998. Silicon Solar Cells by Martin A. Green, The University of New South Wales, 1995. Direct Energy Conversion by Stanley W. Angrist, Allyn and Beacon, 1982. Sustainable Energy Science and Engineering Center Photovoltaic Effect Solar photovoltaic energy conversion: Converting sunlight directly into electricity. When light is absorbed by matter, photons are given up to excite electrons to higher energy states within the material (the energy difference between the initial and final states is given by hν). Particularly, this occurs when the energy of the photons making up the light is larger than the forbidden band gap of the semiconductor. But the excited electrons relax back quickly to their original or ground state. In a photovoltaic device, there is a built-in asymmetry (due to doping) which pulls the excited electrons away before they can relax, and feeds them to an external circuit. The extra energy of the excited electrons generates a potential difference or electron motive force (e.m.f.). This force drives the electrons through a load in the external circuit to do electrical work. Sustainable Energy Science and Engineering Center Pn-Junction Diode The solar cell is the basic building block of solar photovoltaics. The cell can be considered as a two terminal device which conducts like a diode in the dark and generates a photovoltage when charged by the sun.