Dr. Gerhard Klimeck
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Save Our Semiconductors Purdue Researcher Develops New Nano-Simulation Tools on Ranger to Design Smaller Transistors
Save Our Semiconductors Purdue researcher develops new nano-simulation tools on Ranger to design smaller transistors The semiconductor industry is in peril, experts say. What will these future devices look like? How will they be designed and manufactured? And how can As chips get smaller and smaller, they grow intensely they be optimized quickly to keep the semiconductor hot, power-hungry and unreliable. Furthermore, at industry on track? the nano-regime (10 nanometers and smaller; 5,000 times thinner than a strand of hair), the electrons that flow through semiconductors begin to behave like waves, ruled by the laws of quantum mechanics, and chips lose their efficiency. “The semiconductor industry is going to come to a halt in ten years unless we find design alternatives,” said Gerhard Klimeck, a professor of electrical and computer engineering at Purdue University and as- sociate director for technology at the Network for Computational Nanotechnology (NCN). “We must get away from traditional designs which are, in a sense, one-dimensional, modified layer by layer, and Band-To-Band-Tunneling in InAs Devices: Charge Self-consistent start modifying devices to vary on a three-dimen- Full-Band Transport in Realistic Structure. [Image courtesy of: Ma- sional scale. For that, we need a different simulation thieu Luisier, Gerhard Klimeck] engine.” The answers to these questions have major ramifica- Such a simulator would have to take into account tions, not just for the ubiquitous computer industry, both the quantum behavior and the atomic-level de- but also for detectors, lasers, and green energy solu- tail of their components, which makes them far more tions, all of which will impact our lives. -
Theoretical Study of Strain-Dependent Optical Absorption in a Doped Self-Assembled Inas/Ingaas/Gaas/Algaas Quantum Dot
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot Tarek A. Ameen*,‡1, Hesameddin Ilatikhameneh*,‡1, Archana Tankasala1, Yuling Hsueh1, James Charles1, Jim Fonseca1, Michael Povolotskyi1, Jun Oh Kim2, Sanjay Krishna3, Monica S. Allen4, Jeffery W. Allen4, Rajib Rahman1 and Gerhard Klimeck1 Full Research Paper Open Access Address: Beilstein J. Nanotechnol. 2018, 9, 1075–1084. 1Network for Computational Nanotechnology, Department of Electrical doi:10.3762/bjnano.9.99 and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA, 2Korean Research Institute of Standards and Sciences, Received: 02 November 2017 Daejeon 34113, South Korea, 3Department of Electrical and Accepted: 09 February 2018 Computer Engineering, Ohio State University, Columbus, OH 43210, Published: 04 April 2018 USA and 4Air Force Research Laboratory, Munitions Directorate, Eglin AFB, FL 32542, USA. This article is part of the Thematic Series "Light–Matter interactions on the nanoscale". Email: Tarek A. Ameen* - [email protected]; Guest Editor: M. Rahmani Hesameddin Ilatikhameneh* - [email protected] © 2018 Ameen et al.; licensee Beilstein-Institut. * Corresponding author ‡ Equal contributors License and terms: see end of document. Keywords: anharmonic atomistic strain model; biaxial strain ratio; configuration interaction; optical absorption; quantum qot filling; self-assembled quantum dots; semi-empirical tight-binding; sp3d5s* with spin–orbit coupling (sp3d5s*_SO) Abstract A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. -
Gerhard Klimeck V. Virginia Klimeck
MEMORANDUM DECISION Pursuant to Ind. Appellate Rule 65(D), this Memorandum Decision shall not be regarded as precedent or cited before any court except for the purpose of establishing the defense of res judicata, collateral estoppel, or the law of the case. ATTORNEY FOR APPELLANT ATTORNEY FOR APPELLEE Cynthia Phillips Smith Jennifer Fehrenbach Taylor Lafayette, Indiana Fehrenbach Taylor Law Office Lafayette, Indiana I N T H E COURT OF APPEALS OF INDIANA Gerhard Klimeck, August 11, 2016 Appellant, Court of Appeals Cause No. 79A02-1510-DR-1796 v. Appeal from the Tippecanoe Circuit Court Virginia Klimeck, The Honorable Thomas H. Busch, Appellee. Judge Trial Court Cause No. 79C01-1501-DR-10 Barnes, Judge. Court of Appeals of Indiana | Memorandum Decision 79A02-1510-DR-1796 | August 11, 2016 Page 1 of 19 Case Summary [1] Gerhard Klimeck appeals the denial of the motion to correct error he filed following the trial court’s issuance of findings of fact, conclusions of law, and dissolution decree in his divorce from his wife Virginia Klimeck. We affirm in part, reverse in part, and remand. Issues [2] The restated substantive issues before us are: I. whether the trial court divided the marital estate in a just and reasonable manner; II. whether the trial court abused its discretion by ordering Gerhard to make spousal maintenance payments to Virginia; and III. whether the trial court abused its discretion by imposing a “gag order” on Gerhard with regard to Virginia’s medical conditions and treatment. Facts [3] Gerhard and Virginia were married on July 1, 1995, and have two children. -
L2.3: Bulk MOS
Online simulations via nanoHUB: Molecular dynamics simulation of melting In this tutorial: • Setup an MD simulation for bulk Aluminum • Increase the system temperature with time • Explore melting Ale Strachan [email protected] School of Materials Engineering & Birck Nanotechnology Center Purdue University West Lafayette, Indiana USA © Alejandro Strachan – Online simulations: MD and melting 1 STEP 1: launch the nanoMATERIALS tool From your My HUB page launch nanoMATERIALS • From All Tools find: nano-Materials Simulation Toolkit • Launch tool by clicking on: © Alejandro Strachan – Online simulations: MD and melting 2 STEP 2: setup the atomistic simulation cell From the Input Model tab of the tool • Start with an Al unit cell • 4-atom cubic fcc cell: Cell vectors: a=a0(1,0,0) b=a0(0,1,0) c=a0(0,0,1) With a0=0.402 nm Fractional atomic positions (0,0,0) (0.0, 0.25, 0.25) (0.25, 0.0, 0.25) (0.25, 0.25, 0.0) • Replicate unit cell to create supercell Simulation cell will be infinitively • Replicate 5 times in each direction periodic with no free surfaces • Total number of atoms: 4x5x5x5 = 500 © Alejandro Strachan – Online simulations: MD and melting 3 STEP 3: setup the run parameters From the Driver Specification tab of the tool • NPT ensemble • Control temperature & pressure • Timestep to solve equations of motion: 0.002 ps (2 fs) • Number of MD steps 30,000 • Total simulation time: 30,000x0.002ps=60 ps • Temperature • Start simulation at room temp • Temperature increment • 30 K/ps • Temperature increase during run: 60ps x 30K/ps = 1800 • Final temperature: 1200 K + 300 K = 2100K © Alejandro Strachan – Online simulations: MD and melting 4 STEP 3 (cont.): setup the run parameters From the Driver Specification tab of the tool • Do not strain the simulation cell • Barostat will take care of thermal expansion and keep pressure at 1 atm. -
Nanohub.Org - Online Simulation and More Materials for Semiconductors and Nanoelectronics in Education and Research
Purdue University Purdue e-Pubs Other Nanotechnology Publications Birck Nanotechnology Center August 2008 nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research Gerhard Klimeck Purdue University - Main Campus, [email protected] Michael McLennan Purdue University - Main Campus Mark S. Lundstrom Purdue University - Main Campus George B. Adams III Purdue University - Main Campus Follow this and additional works at: https://docs.lib.purdue.edu/nanodocs Klimeck, Gerhard; McLennan, Michael; Lundstrom, Mark S.; and Adams, George B. III, "nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research" (2008). Other Nanotechnology Publications. Paper 144. https://docs.lib.purdue.edu/nanodocs/144 This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. nanoHUB.org – online simulation and more materials for semiconductors and nanoelectronics in education and research Gerhard Klimeck, Michael McLennan, Mark S. Lundstrom, George B. Adams III. Purdue University, Network for Computational Nanotechnology, West Lafayette, IN 47907 [email protected] nanoHUB.org provides a community service to over 65,000 using interactive seminar content for more than 15 minutes, or users in over 172 countries annually with “online simulations and an IP address that downloads (not just views) a content item. and more”. Over 85 interactive simulation tools supported by tutorials and general nanotechnology information material are As of 2007-08, nanoHUB is receiving 3–5 million web hits available free of charge to anybody. In all there are over 1,000 monthly. Most of our users come from academic institutions resources on nanoHUB. -
National Nanotechnology Initiative (NNI) Is Managed by the Nanoscale Science, Engineering, and Technology (NSET) Subcommittee of the NSTC Committee on Technology
THE NATIONAL NANOTECHNOLOGY INITIATIVE Supplement to the President’s 2016 Budget About the National Science and Technology Council The National Science and Technology Council (NSTC) is the principal means by which the Executive Branch coordinates science and technology policy across the diverse entities that make up the Federal research and development enterprise. A primary objective of the NSTC is establishing clear national goals for Federal science and technology investments. The NSTC prepares research and development strategies that are coordinated across Federal agencies to form investment packages aimed at accomplishing multiple national goals. The work of the NSTC is organized under committees that oversee subcommittees and working groups focused on different aspects of science and technology. The National Nanotechnology Initiative (NNI) is managed by the Nanoscale Science, Engineering, and Technology (NSET) Subcommittee of the NSTC Committee on Technology. More information is available at www.WhiteHouse.gov/administration/eop/ostp/nstc. About the Office of Science and Technology Policy The Office of Science and Technology Policy (OSTP) was established by the National Science and Technology Policy, Organization, and Priorities Act of 1976. OSTP’s responsibilities include advising the President in policy formulation and budget development on questions in which science and technology are important elements; articulating the President’s science and technology policy and programs; and fostering strong partnerships among Federal, state, -
First Time User Guide to OMEN Nanowire**
Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First Time User Guide to OMEN Nanowire** Sung Geun Kim*, Saumitra R. Mehrotra, Ben Haley, Mathieu Luisier, Gerhard Klimeck Network for Computational Nanotechnology (NCN) Electrical and Computer Engineering *[email protected] ** https://nanohub.org/resources/5359 Outline • Introduction : Device →What is a nanowire? →What is a nanowire FET? →What can be measured in a nanowire FET? • What can be simulated by the OMEN Nanowire? -Input • What if you just hit “Simulate”? - Output • Examples – input-output relationship →What if the length of the channel is changed? →What if the diameter of nanowire is changed? • Limitation of the OMEN Nanowire tool • References Sung Geun Kim What is a nanowire? Nanowire : Wire-like structure with diameter or lateral dimension of nanometer(10-9m) ~10-9m=1nm ~Size of DNA http://en.wikipedia.org/wiki/DNA → Various material systems can be used to fabricate nanowires e.g.) Silver, Gold, Copper, …, etc. (metal) Si, Ge, GaAs, GaN, …, etc. (semiconductor) Sung Geun Kim What is a nanowire? Application of nanowires Fig. 1 **Nanowire memory cell Fig. 3 Nanowire FET National Institute of Standards and Technology Fig 1. http://www.eurekalert.org/pub_releases/2004-04/uosc-spn042004.php Fig 2. http://www.spectrum.ieee.org/oct07/5642 Fig. 2 ***Nanowire LED Fig 3. http://www.nist.gov/public_affairs/techbeat/tb2005_0630.htm#transistors B. Tian, Lieber Group, Harvard University Sung Geun Kim What is a nanowire FET? Nanowire FET : field effect transistor(FET) using nanowire Gate Drain Off On Current Source Insulator Channel » The current from the source to the drain is turned on and off by the voltage applied to the gate. -
L2.3: Bulk MOS
Online simulations via nanoHUB: Exchange interaction in Oxygen In this tutorial: • Setup DFT simulation of oxygen • Explore how the total spin affects total energy • Quantify exchange energy Ale Strachan [email protected] School of Materials Engineering & Birck Nanotechnology Center Purdue University West Lafayette, Indiana USA © Alejandro Strachan – Online simulations: Getting Started 1 STEP 1: launch the SeqQuest tool From your My HUB page launch seqQuest • From All Tools find: nanoMaterials SeqQuest DFT • Launch tool by clicking on: © Alejandro Strachan – Online simulations: getting started 2 STEP 2: setup the atomistic simulation cell From the Input Geometry tab of the tool We will select the O2 molecule pre-build case and modify it Only 1 atom (1st line) Oxygen atom at position 0.0, 0.0, 0.0 (3rd line) Make sure there are no extra lines (even at the end) and do not use tabs Box for simulation (10 Angstroms on the side): 10.0 0.0 0.0 0.0 10.0 0.0 0.0 0.0 10.0 © Alejandro Strachan – Online simulations: electronic structure of the O atom 2 STEP 3: setup the spin state to be considered Spin 1 configuration • Set GGA-SP (for exchange & correlation) • Set spin polarization to 2 (this number is the difference between spin up and spin down) Spin 0 configuration • Set GGA • Spin polarization to 0 (same number of spin up as down) © Alejandro Strachan – Online simulations: getting started 2 STEP 4: set type of run and simulate! Calculation specification tab We have a single atom so the atomic force will always be zero. -
Online Simulations Via Nanohub: Nanoscale Thermal Transport Via MD
Online simulations via nanoHUB: Nanoscale thermal transport via MD In this tutorial: • Non-equilibrium MD simulations of thermal transport Keng-hua Lin and Ale Strachan [email protected] School of Materials Engineering & Birck Nanotechnology Center Purdue University West Lafayette, Indiana USA © Alejandro Strachan – Online simulaons: Geng Started 1 STEP 1: • From All Tools find: nanoMATERIALS nanoscale heat transport • Launch tool by clicking on: © Alejandro Strachan – Online simulaons: geng started 2 STEP 2: setup the atomistic simulation cell From the Input Model tab of the tool • Select prebuilt structures • Or create your own structure by checking the box We will create our own © Alejandro Strachan – Online simulaons: geng started 3 How the simulation cells are defined • Along the transport direc7on the simulaon contains: • 2 Heat baths (blue) • The middle bin defines the hot and cold regions • Interior material (red) • This can be defined to be a superlace • Periodic boundary condi7ons are applied along the transport direcon Material (5 bins) Heat bath (3 bins) Cold bin Hot bin F. Müller-Plathe, J. Chem. Phys. 106, 6082 (1997) Keng-Hua Lin and A. Strachan, Physical Review B, 87, 115302 (2013). © Alejandro Strachan – Online simulaons: geng started 3 STEP 2: setup the atomistic simulation cell • We would like to create a Si supercell by replicang the cubic Si unit cell • The tool allows users to build superlaces (laminates) so it is a bit convoluted Along the transport the system will be divided in bins Each bin is one unit cell long -
Reproducing MD Simulations In
Reproducible Science @ nanoHUB.org Reproducing MD simulations in Thermal transport in SiGe superlattice thin films and nanowires: Effects of specimen and periodic lengths Keng-hua Lin, and Alejandro Strachan Physical Review B 87, 115302 (2011) Jon Dunn and Ale Strachan Network for Computational Nanotechnology (NCN) School of Materials Engineering [email protected] The paper Ale Strachan Key results Studied thermal transport on various semiconductor superlattices SL Thin film SL Square Nanowire SL Circular Nanowire • Thin film and nanowire configurations • Focused on how characteristic sizes affect thermal transport • Superlattice period • Total specimen length Ale Strachan Key results Thermal conductivity vs. superlattice period for three specimen lengths 105.87 nm 70.52 nm 35.21 nm 10 Thin Film Thin Film Thin Film S quAre NAnowire S quare Nanowire S quare Nanowire 8 C irculAr NAnowire C ircular Nanowire C ircular Nanowire 6 (W/mK ) 4 κ 2 0 0 10 20 30 40 0 10 20 30 40 0 10 20 30 40 Periodic Length (nm) Periodic Length (nm) Periodic Length (nm) • Thermal conductivity decreases with decreasing period until it reaches a minimum, further reduction leads to an increase in thermal conductivity – this is well known • For long specimens thermal conductivity of wires is smaller than thin films – this is expected due to surface scattering • Reducing specimen length reduces thermal conductivity – also well known – but the decrease in thin film is much more marked -> key result of the paper • For short specimens thermal conductivity of thin films -
Thesis-Franckie-FINAL
Modeling Quantum Cascade Lasers Modeling Quantum Cascade Lasers: The Challenge of Infra-Red Devices by Martin Franckié Thesis for the degree of Doctor of Philosophy Thesis advisors: Prof. Andreas Wacker, Dr. Claudio Verdozzi Faculty opponent: Prof. Gerhard Klimeck To be presented, with the permission of the Faculty of Science of Lund University, for public criticism in the Rydberg lecture hall (Rydbergsalen) at the Department of Physics on Friday, the 13th of May 2016 at 13:00. Organization Document name LUND UNIVERSITY DOCTORAL DISSERTATION Department of Physics Date of disputation Box 118 2016-05-13 221 00 LUND Sponsoring organization Sweden Author(s) Martin Franckié Title and subtitle Modeling Quantum Cascade Lasers: The Challenge of Infra-Red Devices Abstract The Quantum Cascade Laser (QCL) is a solid state source of coherent radiation in the tera- hertz and mid-infrared parts of the electro-magnetic spectrum. In this thesis, I have used a non-equilibrium Green’s function (NEGF) model to theoretically investigate the quantum nature of the device operation, and compared simulation results to experiments. As simula- tions with the NEGF model are time-consuming, especially for mid-infrared QCLs owing to their large state space, the program has been parallelized to run on large computer clusters. Additional challenges of mid-infrared QCLs are increased interface roughness scattering and non-parabolicity effects, which have been included into the existing NEGF model. With this new model, simulation results in close agreement with experimental -
Bob Eisenberg (More Formally, Robert S
Bob Eisenberg (more formally, Robert S. Eisenberg) Curriculum Vitae September 11, 2021 Maintained with loving care by John Tang, all these years, with thanks from Bob! Address 7320 Lake Street Unit 5 River Forest IL 60305 USA or PO Box 5409 River Forest IL 60305 USA or Department of Physiology & Biophysics Rush University 1750 West Harrison, Room 1519a Jelke Chicago IL 60612 or Dept of Applied Mathematics Room 106D Pritzker Center, corner of State and 31st Street, Illinois Institute of Technology, Chicago IL 60616 Phone numbers Voice: +1 (708) 932 2597; Rush Department: Voice +1 (312)-942-6454; Rush FAX: (312)-942-8711 FAX to email: (801)-504-8665 Skype name: beisenbe Email: [email protected] Other email:[email protected], [email protected], [email protected] Scopus ID’s are 55552198800 and 7102490928. NIH COMMONS name is BEISENBE. ORCID identifier is 0000-0002-4860-5434 Web of Science ResearcherID is: G-8716-2018 and/or P-6070-2019 Publons Public Profile G-8716-2018 Robert S. Eisenberg https://publons.com/researcher/1941224/robert-s-eisenberg/ NIH maintained “My Bibliography: Bob Eisenberg” at http://goo.gl/Z7a2V7 or https://www.ncbi.nlm.nih.gov/myncbi/browse/collection/47999805/?sort=date&direction=ascending Education Elementary School: New Rochelle, New York High School, 1956-59. Horace Mann School, Riverdale, New York City, graduated in three years with honors and awards in Biology, Chemistry, Physics, Mathematics, Latin, English, and History. An interviewer of J.R. Pappenheimer, Professor of Physiology, Harvard Medical School, on American Heart Sponsored television program, ~1957. p. 1 RS Eisenberg September 11, 2021 Undergraduate, 1959-62.