ISOLDE Newsletter Spring 2015

Total Page:16

File Type:pdf, Size:1020Kb

ISOLDE Newsletter Spring 2015 Spring 2015 ISOLDE newsletter http://isolde.web.cern.ch/ optical model and DWBA using FRESCO for Introduction several basic cases and using TWOFNR code for transfer (d,p) reactions. To learn The year 2014 was characterized by the more about the courses given in 2013 and consolidation and realisation of many 2014 one can visit, pending tasks. The year started with the http://isolde.web.cern.ch/isolde-schools- technical team working hard and counting and-courses . down the weeks until the startup. Physicists The shut down period was taken advantage followed the progress in tuning up the of by upgrading some setups, such as machine and heard with dismay about the ISOLTRAP, and building new ones. Firstly stumbling blocks encountered, mainly the ISOLDE beta Decay Studies, IDS, problems with the controls, and at the same permanently equipped with three clover time, they greeted the advances with HPGe detectors and a Miniball detector was excitement as they were eager to start. installed. Depending on the physics case In parallel the construction of building 508 IDS can incorporate Si detectors for beta- continued. The new building has more delayed charged particle studies, or space for the physicists, their laboratories LaBr3(Ce) scintillators for half-life and DAQ rooms and hosts the ISOLDE measurements of excited states. Secondly control room in a spacious and well the previous UHV ASPIC beam line was fully ventilated room outside the controlled area, redesigned to host up to three possible a long standing request from the Beams experiments including ASPIC. The first part Department. The large control room is of the new VITO (Versatile Ion-polarized ready to accomodate the future TSR Technique on-line) line was mounted and controls. The delay in finishing the building, the first experiment with Cu-beams took expected for May 2014, soon became clear. place in December. The permanent setups most hurt by the In spite of the bumpy start and the amount delays were COLLAPS and the solid state of technical issues discovered on line, laboratories. The solid state groups leading to multiple updates of the schedule, arranged their setups in building 275 while the capability of the physicists to adapt to COLLAPS installed part of their lasers in the the circumstances and the professionalism ISOLDE hall to be able to complete at least of the technical team made the year 2014 a one experiment. successful one for physics as witnessed by The course entitled “ISOLDE Nuclear the contributions included below in this Reactions and Nuclear Structure” took place ISOLDE Newsletter. the 22-25 of April 2014 with maximum The very first experimental run, carried out st attendance. The course addressed the on the 1 of August, was greeted with a fantastic atmosphere and a real buzz in the different nuclear structure and reaction 149 155 information that can be obtained by air. Samples of lanthanides Tb and Tb were collected and shipped to PSI, reaction studies done at the energies 140 relevant for HIE-ISOLDE. W. Catford, A. Di Switzerland and Nd to DTU Risø, Pietro and A. Moro gave the lectures and, to Denmark. The aim was to identify chemical complete the picture, B. Jonson gave a elements with suitable isotopes for seminar on the physics that can be done diagnosis and therapy. Among the travelling with reactions at intermediate energies. experiments we also welcomed new devices Practical exercises were led by A. Moro in such as the TATRA tape transport system the afternoon including calculations of an designed by our Slovak colleagues and Spring 2015 2 ISOLDE newsletter dedicated to the study of neutron deficient the co-habitation of the HIE-ISOLDE works odd Hg isotopes. A large array of neutron and the low energy physics experiments the detectors came from CIEMAT (Spain) and hall was divided into two parts with LPC-Caen (France) and it was dedicated to different access and safety conditions. The the measurement of the delayed neutron - interest in the facility continued growing neutron correlation emitted in the 11Li beta worldwide. More countries showed interest decay. in becoming members of the collaboration The complementarity between different and many new physics groups are attracted devices and their state of the art capabilities by its potential. The project HIE-ISOLDE allowed for the determination of the ground was presented at several nuclear state properties of a long series of At conferences and in front of the NuPECC isotopes with production rates and half-lives Expert Committee in the meeting of October expanding over a range of 8 orders of 2014. We are all looking forward to the start magnitude. This successful experiment with post-accelerated beams in 2015. showed ISOLDE strengths and combined CERN recognised in 2013 the unique the synergies of three devices: the RILIS scientific opportunity offered by installing lasers, the Windmill setup equipped with the TSR at the HIE-ISOLDE facility. Since silicon and germanium detectors, and the then several groups have manifested their ISOLTRAP Multi-Reflection Time-of-Flight commitment to develop instrumentation for mass spectrometer. the TSR and different working groups were The ENSAR EU Project was prolonged until created after the one-day workshop held the end of December 2014. The remaining the 14th of February 2014 with 60 ENSAR funds for transnational access were participants distributed between young researchers, (http://indico.cern.ch/event/271980/). In students and newcomers. In numbers, the particular, the UK teams joined forces to total transnational access funds obtained make an application to the STFC to provide from ENSAR sponsored 2481 days of 418 instrumentation for the TSR which was users belonging to 90 projects. ENSAR2 was successful. To support the UK grant, CERN submitted in September and is presently on has committed to the construction of the the reserve list waiting for approval. These third beamline for HIE-ISOLDE including the funds are very important as they reach the U-turn to place an external spectrometer in full community and allow many young the ISOLDE hall. The TSR working groups researchers to participate in the are preparing the two-day workshop that experiments and have a first contact with will take place at CERN 27-28 of April. the facility. We hope for the projects The annual ISOLDE workshop and users approval. meeting was held the 15-17th of December HIE-ISOLDE progressed well during 2014, 2014 with a Golden Jubilee session on the cavities showed good performance and December 17th precisely 50 years after the the clean room for the assembling of the approval of ISOLDE by the CERN Council in cryomodule in SM18 was built. The hall 1964. The session was opened by Torleif extension was receiving more and more Ericsson, the chair of Nuclear Physics experimental elements and busy with Experiments committee at that moment different infrastructure installations. The (equivalent to the Scientific Policy tunnel was given its final length to host the Committee of today) who recommended the future linac. All procurements for HIE- ISOLDE project to the council. He recreated ISOLDE phase I were launched. To facilitate the circumstances in which the “Study of Spring 2015 3 ISOLDE newsletter short-lived radioactivities by means of an glasses, are available in the cabinet by the isotope separator on-line with the CERN ISOLDE stairs. Quiet, equipped rooms Synchro-Cyclotron” was approved. He behind ISOLDE are available for electrical emphasized the role-played by V. Weisskopf and similar work (see – Laboratories). in establishing the laboratory’s vision that You can only perform the work for which “CERN should be open to other fields than you are trained and authorized, i.e. for LN2 Particle Physics”. In particular he proposed manipulations or work with lasers you to re-establish the links with Nuclear Physics should follow the relevant CERN class (Initiative taken in the 1963 Conference on courses or at least get a proper briefing High Energy Physics and Nuclear structure). from your local contact who followed the Afterwards we had presentations by all the course. For performing electrical work former group leaders: B. Jonson, J-H-J (making cables, putting up HV cages) – you Kluge, H. Haas, P. Van Duppen, G. Bollen, J need a 3-day CERN course (all local Äystö, P. Butler, K. Riisager and Y. physicists have followed it). All users who Blumenfeld, who presented the do not perform strictly electrical work have breakthroughs and highlights of the facility to follow a new 2-h electrical awareness during their leadership. The presentations course, see Courses and access to ISOLDE. were recorded and they can be seen via If you want to use the new mechanical http://indico.cern.ch/event/334117. The workshop, you will have to provide a session was closed by the DG, R. Heuer, document to be signed by your teamleader, who gave the four prizes sponsored by yourself, and our workshop supervisor, CAEN to the best posters and best young authorising you to use the selected speakers, a new tradition to be added to machines in the workshop. For more our annual ISOLDE meeting. The next information please contact your experiment edition will take place the 2-4th December spokesperson or me. 2015. We have also updated the list of safety The year 2015 is a very challenging one, contacts for fixed and travelling with the startup of HIE-ISOLDE. While experiments: writing these words the first experimental http://isolde.web.cern.ch/safety beamline is being assembled ready to host In case of an accident (electric shock, LN2 experiments. We are ready for the start of burn, fall, etc.) please do not ignore it, but the new adventure. call the CERN fire fighters who will advise you how to proceed.
Recommended publications
  • Lanthanide Doped Wide Band Gap Semiconductors: Intra-4F Luminescence and Lattice Location Studies
    Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies Dissertation zur Erlangung des Doktorgrades der Mathematisch–Naturwissenschaftlichen Fakultäten der Georg–August–Universität zu Göttingen vorgelegt von Ulrich Vetter aus Stuttgart–Bad Canstatt Göttingen 2003 D7 Referent: Prof. Dr. Hans C. Hofsäß Koreferent: Prof. Dr. Rainer G. Ulbrich Tag der mündlichen Prüfung: 15. Juli 2003 To Olga and Nikita Contents 1 Abstract 1 2 Introduction 3 2.1 Lanthanide doped semiconductors . 3 2.2 The aim of this work . 8 3 Fundamentals and characterization techniques 9 3.1 Luminescence properties of triply ionized lanthanides . 9 3.1.1 Basic properties . 10 3.1.2 Free ion energy matrix and Dieke diagram . 12 3.1.3 The crystal field . 20 3.1.4 Induced electric dipole and magnetic dipole transitions . 24 3.1.5 Temperature-dependent phenomena: electron phonon interaction . 32 3.1.6 Relaxation phenomena: time-resolved spectroscopy . 36 3.1.7 Numerical details and extensions . 39 3.1.8 Eu3+, Tm3+ and Gd3+ .......................... 41 3.2 Electron emission channeling . 45 3.2.1 Solutions to the Schrödinger equation . 45 3.2.2 Dechanneling . 47 3.2.3 Experimental parameters . 50 3.2.4 Numerical details and extensions . 50 3.2.5 Lanthanide isotopes for emission channeling investigation . 51 3.3 Ion implantation . 57 3.4 Cathodoluminescence . 57 3.5 Mössbauer spectroscopy . 59 3.5.1 Lanthanide isotopes for Mössbauer spectroscopy investigation . 60 3.5.2 Mössbauer isotopes for thin film investigations . 62 4 Experimental setups 63 4.1 The luminescence spectrometer . 63 i CONTENTS 4.1.1 Chamber, vacuum and cooling system .
    [Show full text]
  • Amphoteric Arsenic in Gan
    Reprint from APPLIED PHYSICS LETTERS 90 (2007) 181934 Amphoteric arsenic in GaN U. Wahla Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal, and Centro de Física Nuclear da Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisboa, Portugal J. G. Correia Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal, and Centro de Física Nuclear da Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisboa, Portugal, and CERN-PH, 1211 Geneva 23, Switzerland J.P. Araújo Departamento de Física, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal E. Rita and J.C. Soares Centro de Física Nuclear da Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisboa, Portugal The ISOLDE collaboration CERN-PH, 1211 Geneva 23, Switzerland (Received 15 March 2007; accepted 11 April 2007; published online 4 May 2007) We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channel- ing from radioactive 73As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing ques- tion as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that AsGa “anti- sites” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “miscibility gap” in ternary GaAs1−x Nx compounds, which cannot be grown with a single phase for values of x in the range 0.1<x<0.99. © 2007 American Institute of Physics. [DOI: 10.1063/1.2736299] The growth and properties of ternary semiconductors of scale with the amount of radioactive 71As and 72As resulting the nitride family have been under intense investigation ever from radioactive decay.
    [Show full text]
  • Mission Statement
    MISSION R&D of advanced materials, processes and technologies for applications to Industry, Biomedicine, Environment and Cultural Heritage using radiation techniques, in particular ion beam and ionizing radiation based techniques (gamma rays and electrons); Maintain and upgrade the technical infrastructures and equipment and the associated techniques and make them available to the community, through collaborations and services; Disseminate knowledge and know-how and promote advanced learning in the specific areas of expertise; Offer specialized services and consultancy, mainly targeted to solve particular needs and analytical problems; Development of equipment using ionizing radiation for industry and research; Technical assistance to the industry. MAIN ACHIEVEMENTS A new integrated pin-diode pre-amplifier particle detection system and the upgrade of the external ion beam line. Structural, compositional and optical studies of wide bandgap ternary compounds such as AlInN, MgZnO and CdZnO. (Fig. 1). Ion Beam analysis of new Be and divertor marker tiles as well as reciprocating probes for the Be transport experiment, before and after exposure in JET(Fig. 2). Fig.1: XRD reciprocal space map around the 10 1 5 reciprocal lattice point of a CdxZn1-xO film (x=0.12) grown on MgZnO. Photographs of the visible light emission of Cd Zn O films x 1-x Fig. 2: SE image showing microstructures observed in W- with different CdO molar fractions. + + 10Tap implanted with He and D ions. The study of Silver objects from different collections - “Vidigueira Treasure” from Museu Nacional de Arte Antiga and gold earrings belonging to the “Pancas Treasure”, from Museu Nacional de Arqueologia - were studied to identify and quantify the major, minor and trace elements (Fig.
    [Show full text]
  • Accepted Paper Cite As
    Accepted paper Cite as: D. Nd. Faye, X. Biquard, E. Nogales, M. Felizardo, M. Peres, A. Redondo-Cubero, T. Auzelle, B. Daudin, L.H.G. Tizei, M. Kociak, P. Ruterana, W. Möller, B. Méndez, E. Alves, K. Lorenz Incorporation of Europium into GaN Nanowires by Ion Implantation J. Phys. Chem. C 123 (2019) 11874−11887 DOI: 10.1021/acs.jpcc.8b12014 Incorporation of Europium into GaN Nanowires by Ion Implantation D. Nd. Faye1, X. Biquard2, E. Nogales3, M. Felizardo1, M. Peres1, A. Redondo- Cubero1+, T. Auzelle4,5, B. Daudin4, L.H.G. Tizei5, M. Kociak5, P. Ruterana6, W. Möller7, B. Méndez3, E. Alves1, K. Lorenz1,8 1IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal 2Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France 3Departamento de Física de Materiales, Universidad Complutense, 28040 Madrid, Spain 4Université Grenoble Alpes, CEA, IRIG, PHELIQS, 38000 Grenoble, France 5Laboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, Orsay 91405, France 6Centre de recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252, CNRS-ENSICAEN, 6, Boulevard Maréchal Juin, 14050 Caen, France 7Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, Germany 8Instituto de Engenharia de Sistemas de Computadores- Microsistemas e Nanotecnologias (INESC-MN), Rua Alves Redol 9, 1000-029 Lisboa, Portugal + Current address: Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, Madrid, Spain Tel. +351-219946052; fax +351 21 9946285; [email protected] 1 ABSTRACT Rare earth (RE) doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies.
    [Show full text]
  • 3.1 Ion Implantation
    CHAPTER 3 SAMPLE PREPARATION AND CHARACTERIZATION 35 3.1 Ion implantation This work’s implanted ions were produced in an ion source by sputtering a solid target or by ionising a vapour. They are extracted from the source and accelerated by an electrostatic field to energies of a few thousand electron volt (keV). Subsequently, the ions are separated by mass, using an analyzing magnet. After passing through electrostatic or magnetic quadrupole for focusing, the ions become implanted in the near-surface region of the desired material. In SrTiO3 typical implanted layers have depths of about 200-300 Å if the energy of the ion beam ranges in between 40-60 keV. The ions come to rest by dissipating the kinetic energy through interactions (i.e, collisions) with nuclei and electrons in the solid. The cross sections for both scattering processes depend on the incident ion energy, its nuclear charge and mass and the mass of the solid atoms. The second process, called electronic stopping, is dominant if high ion energies and small atomic numbers Z are present. With decreasing kinetic energy of the ions or increasing atomic number Z, the first process, called nuclear stopping (at the Coulomb potential of the nuclei) becomes dominant. Nuclear stopping leads to the generation of defects in the solid crystalline lattice, if the energy transferred to the target atom is sufficient for a displacement. Both electronic stopping and nuclear stopping determine the implantation profile, i.e. the depth distribution of the implanted ions. The implantation depth and corresponding straggling (equal to the variance of the distribution) can be calculated with SRIM (the Stopping Power and Range of Ions in Matter) code, which is a Monte Carlo computer simulation program [1].
    [Show full text]
  • Notes on Channeling
    NOTES ON CHANNELING J.U. Andersen LIST OF CONTENTS AND FIGURES Chapters Page Figures 1. Introduction 2 2. Directional effects 3 1-3 3. Deflection by atom 6 4 4. Continuum potential 8 5 5. Atomic potential 10 6 6. Critical angles 13 7, 8 7. Thermal vibrations 18 9 8. Merging of axial and planar effects 21 10-12 9. Reversibility and blocking 24 10. Experimental observation 26 19-21a 11. Statistical treatment 33 22 12. Trend towards equilibrium 37 23, 24 13. Three stages in particle motion 40 25-29 14. Standard model 45 30-34 15. Corrections to 휒min and 휓1/2 53 35-41 16. Compensation rules 60 42, 43 17. Scattering of random and aligned beam 66 44-46 18. Dechanneling 82 47-56 19. Stopping and atomic processes in channelled ions 102 57-66 20. Applications of channeling and blocking 112 67-72 21. Electrons and positrons, channeling radiation 118 73-87 22. References 130 1. INTRODUCTION Ion channeling in crystals was discovered in the early 1960s [Davies 1983]. Systematic studies of the range of low-energy heavy ions revealed significant discrepancies from theoretical expectations. The average range was found to be in good agreement with theory, but there was in polycrystalline materials a nearly exponential tail of ions with much longer range. Experiments with amorphous and single-crystalline materials soon proved that the effect was caused by enhanced penetration along major axes in the crystals [Piercy et al. 1963], [Lutz and Sizmann 1963]. Also computer simulations of ion penetration showed this effect [Robinson and Oen 1963].
    [Show full text]
  • Thermal Stability of Te-Hyperdoped Si: Atomic-Scale Correlation of the Structural, Electrical and Optical Properties
    Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties Mao Wang1,2,*, R. Hübner,1 Chi Xu1,2, Yufang Xie1,2, Y. Berencén1, R. Heller1, L. Rebohle1, M. Helm1,2, S. Prucnal1, and Shengqiang Zhou1 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany 2Technische Universität Dresden, 01062 Dresden, Germany Abstract Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance for the device fabrication process involving temperature-dependent steps like ohmic contact formation. Here, we report on the thermal stability of the as-fabricated Te- hyperdoped Si subjected to isochronal furnace anneals from 250 °C to 1200 °C. We demonstrate that Te-hyperdoped Si exhibits thermal stability up to 400 °C with a duration of 10 minutes that even helps to further improve the crystalline quality, the electrical activation of Te dopants and the room-temperature sub-band gap absorption. At higher temperatures, however, Te atoms are found to move out from the substitutional sites with a migration energy of EM = 2.1 ± 0.1 eV forming inactive clusters and precipitates that impair the structural, electrical and optical properties. These results provide further insight into the underlying physical state transformation of Te dopants in a metastable compositional regime caused by post-synthesis thermal annealing as well as pave the way for the fabrication of advanced hyperdoped Si-based devices.
    [Show full text]