DOCSLIB.ORG

Gan RF Technology for Dummies,® Qorvo Special Edition Published by John Wiley & Sons, Inc

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Gan RF Technology for Dummies,® Qorvo Special Edition Published by John Wiley & Sons, Inc These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. GaN RF Technology Qorvo Special Edition by Andrew Moore and Jose Jimenez These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. GaN RF Technology For Dummies,® Qorvo Special Edition Published by John Wiley & Sons, Inc. 111 River St. Hoboken, NJ 07030-5774 www.wiley.com Copyright © 2015 by John Wiley & Sons, Inc., Hoboken, New Jersey No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning or otherwise, except as permitted under Sections 107 or 108 of the 1976 United States Copyright Act, without the prior written permission of the Publisher. Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, (201) 748-6011, fax (201) 748-6008, or online at http://www.wiley.com/go/permissions. Trademarks: Wiley, For Dummies, the Dummies Man logo, The Dummies Way, Dummies.com, Making Everything Easier, and related trade dress are trademarks or registered trademarks of John Wiley & Sons, Inc. and/or its affiliates in the United States and other countries, and may not be used without written permission. John Wiley & Sons, Inc., is not associated with any product or vendor mentioned in this book. Qorvo and the Qorvo logo, and related trade dress, are trademarks or registered trademarks of Qorvo, Inc. and/or its affiliates in the United States and other countries, and may not be used without written permission. All other trademarks are the property of their respective owners. LIMIT OF LIABILITY/DISCLAIMER OF WARRANTY: QORVO, INC., THE PUBLISHER, AND THE AUTHOR MAKE NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS WORK AND SPECIFICALLY DISCLAIM ALL WARRANTIES, INCLUDING WITHOUT LIMITATION WARRANTIES OF FITNESS FOR A PARTICU- LAR PURPOSE. NO WARRANTY MAY BE CREATED OR EXTENDED BY SALES OR PROMOTIONAL MATERIALS. THE ADVICE AND STRATEGIES CONTAINED HEREIN MAY NOT BE SUITABLE FOR EVERY SITUATION. THIS WORK IS SOLD WITH THE UNDERSTANDING THAT NEITHER QORVO NOR THE PUBLISHER IS ENGAGED IN RENDERING LEGAL, ACCOUNTING, OR OTHER PROFES- SIONAL SERVICES. IF PROFESSIONAL ASSISTANCE IS REQUIRED, THE SERVICES OF A COMPE- TENT PROFESSIONAL PERSON SHOULD BE SOUGHT. NEITHER QORVO NOR THE PUBLISHER NOR THE AUTHOR SHALL BE LIABLE FOR DAMAGES ARISING HEREFROM. THE FACT THAT AN ORGANIZATION OR WEBSITE IS REFERRED TO IN THIS WORK AS A CITATION AND/OR A POTENTIAL SOURCE OF FURTHER INFORMATION DOES NOT MEAN THAT THE AUTHOR OR THE PUBLISHER ENDORSES THE INFORMATION THE ORGANIZATION OR WEBSITE MAY PRO- VIDE OR RECOMMENDATIONS IT MAY MAKE. FURTHER, READERS SHOULD BE AWARE THAT INTERNET WEBSITES LISTED IN THIS WORK MAY HAVE CHANGED OR DISAPPEARED BETWEEN WHEN THIS WORK WAS WRITTEN AND WHEN IT IS READ. ISBN 978-1-119-13553-1 (pbk); ISBN 978-1-119-13554-8 (ebk) Manufactured in the United States of America 10 9 8 7 6 5 4 3 2 1 For general information on our other products and services, or how to create a custom For Dummies book for your business or organization, please contact our Business Development Department in the U.S. at 877-409-4177, contact [email protected], or visit www.wiley.com/go/custompub. For information about licensing the For Dummies brand for products or services, contact BrandedRights&[email protected]. Publisher’s Acknowledgments Some of the people who helped bring this book to market include the following: Development Editor: Elizabeth Kuball Custom Publishing Project Specialist: Project Editor: Elizabeth Kuball Michael Sullivan Acquisitions Editor: Katie Mohr Project Coordinator: Melissa Cossell Editorial Manager: Rev Mengle Special Help: Jennifer Bingham, Douglas Reep, Candice Christensen Business Development Representative: Karen Hattan These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. Introduction allium nitride (GaN) transistors were first demonstrated Gin the 1990s and are now widely available for commer- cial and defense applications. GaN’s popularity is rooted in its high-current, high-voltage capabilities, which makes it highly valuable for microwave applications and power switching. Qorvo is a leader in the development of GaN transistors for radio frequency (RF) applications and their underlying process technology. Its latest devices support low-noise applications, as well as those at higher frequencies and power levels beyond 200 watts. Qorvo’s discrete GaN transistors, monolithic microwave inte- grated circuits (MMICs), and packaged solutions support a wide range of applications, including next-generation radar, electronic warfare (EW), base transceiver stations (BTS), instrumentation, and cable TV (CATV) infrastructures. GaN technology outperforms other RF technologies because it can simultaneously offer the highest power, gain, and efficiency combination at a given frequency, and because it operates at a higher operating voltage for a reduced system current. In this book, we fill you in on GaN semiconductors, the GaN field-effect transistor (GaN FET), and some practical considerations for deployment of GaN semiconductors. Foolish Assumptions This book is written for both technical and non-technical readers. If you’re an executive, salesperson, or design engineer, this book is for you. Unless of course, you’re looking for a book on indoor gardening! These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. 2 GaN RF Technology For Dummies, Qorvo Special Edition Icons Used in This Book Throughout this book, we occasionally use icons to call atten- tion to important information. You won’t see the typical cute grinning faces or other flashing emoticons, but you’ll definitely want to stop and pay attention! Here’s what you can expect. This icon points out information that you’ll want to put in storage, your memory, or whatever you use to keep track of important information like birthdays and phone numbers for later use. Anything marked with this icon is targeted toward your inner geek. Who knows? You may come away with some useful knowledge to increase your nerd status. No, this isn’t the thing you do to take care of your waitresses and bartenders. You should stop and take notice because there are nuggets of knowledge that could save you some aggravation later on. Beyond the Book Although this book is full of good information, we could only cover so much in 24 pages! So, if you find yourself wanting more after reading this book, just go to www.qorvo.com/gan, where you can get to more information about Qorvo’s GaN technologies and products. Where to Go from Here Whether you’re new to electrical design and GaN technology or a seasoned design engineer looking to use GaN technology in your designs, you’ll find this book useful. Each chapter in this book stands on its own, so you can skip around if you like. If you’re familiar with the topics in a chapter, you can skip it. We provide cross-references to information in other chapters of the book, so you can always find what you’re looking for. These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. Chapter 1 All about GaN In This Chapter ▶ Getting acquainted with GaN ▶ Seeing what makes GaN unique ▶ Understanding piezoelectricity ▶ Recognizing the benefit of GaN’s high power density allium nitride (GaN) is a binary III/V direct bandgap Gsemiconductor crystal that is most commonly used in general illumination (LED lights) and Blu-ray players. GaN is also used in radio frequency (RF ) amplifiers and in power electronics. GaN is a very hard material; its atoms are bonded by a very ionic gallium-nitrogen chemical bond that produces a bandgap of 3.4 electron volts (eV). In semiconductor physics, the bandgap refers to the energy required to free the electron from its orbit around the nucleus and allow it to move freely through the solid. The bandgap is an important material parameter that ultimately determines the mass of the freely moving electrons and the electric field that the solid is able to withstand. GaN has a bandgap of 3.4 eV, which is a big number. That’s why GaN is called a wide bandgap semiconductor. In comparison, gallium arsenide (GaAs) has a bandgap of 1.4 eV and silicon (Si) has a bandgap of only 1.1 eV. In this chapter, we fill you in on the basics of GaN and explain the unique characteristics that make GaN ideal for RF power amplifiers and other applications that operate at higher voltages and frequencies. These materials are © 2015 John Wiley & Sons, Inc. Any dissemination, distribution, or unauthorized use is strictly prohibited. 4 GaN RF Technology For Dummies, Qorvo Special Edition The Basics of GaN Gallium (Ga) is a chemical element with atomic number 31. Gallium doesn’t exist freely in nature. Instead, it’s a byproduct in the production of zinc and aluminum. The GaN compound is formed by gallium and nitrogen atoms arranged, most commonly, in a wurtzite crystal structure. The wurtzite crystal structure (shown in Figure 1-1) is hexagonal and is characterized by two lattice constants (marked a and c in the figure). Figure 1-1: The GaN crystal structure. In the semiconductor world, GaN is usually grown at a high temperature (approximately 1,100°C) by metal organic chemi- cal vapor deposition (MOCVD) or molecular beam epitaxy (MBE) techniques on a foreign substrate (silicon carbide [SiC] for RF applications, or Si for power electronics applications). The GaN-on-SiC approach combines the high power density capabilities of GaN with the superior thermal conductivity and low RF losses of SiC.
Load more

Recommended publications
  • THE EFFECTS of DEPOSITION CONDITIONS on the MECHANICAL PROPERTIES of TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO
    THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS by SUO LIU Presented to the Faculty of the Graduate School of The University of Texas at Arlington in Partial Fulfillment of the Requirement for the Degree of MASTER OF SCIENCE IN MATERIALS SCIENCE AND ENGINEERING THE UNIVERSITY OF TEXAS AT ARLINGTON MAY 2015 Copyright © by Suo Liu 2015 All Rights Reserve ii Acknowledgements Foremost, I would like to express my sincere gratitude to my advisor Dr. Efstathios I. Meletis for the continuous support of my graduate study and research, for his patience, motivation, enthusiasm, and immense knowledge. His guidance helped me in all the time of research and writing of this thesis. Besides my advisor, I would like to thank the rest of my thesis committee, Dr. Fuqiang Liu and Dr. Harry F. Tibbals, for their generous help. My sincere thanks also go to Dr. Jessica Mooney for preparation of the samples used in this study, as well as for training me on the optical profilometer. I thank each and every one of my group members for their advice, their help and their friendship. I thank Yishu Wang for his help with XPS. Last but not least, I would like to thank my family: my parents Dao Feng Xiang and Aiping Liu, for supporting me spiritually throughout my life. April 28, 2015 iii Abstract THE EFFECTS OF DEPOSITION CONDITIONS ON THE MECHANICAL PROPERTIES OF TITANIUM SILICON NITRIDE NANOCOMPOSITE COATINGS Suo Liu, M.S. The University of Texas at Arlington, 2015 Supervising Professor: Efstathios I.
    [Show full text]
  • Gallium Nitride (Gan) Technology Overview
    EEPC_Chapt_1_P14_SB 12.3.11 The following chapter is from the First Edition of "GaN Transistors for Efficient Power Conversion" Purchase Second Edition CHAPTER 1: Gallium Nitride (GaN) Technology Overview Silicon Power MOSFETs from 1976-2010 For over three decades power management efficiency and cost showed steady improvement as innovations in power in power MOSFET (metal oxide silicon field effect transistor) structures, technology, and circuit topologies paced the growing need for electrical power in our daily lives. In the new millennium, however, the rate of improvement slowed as the silicon power MOSFET asymptotically approached its theoretical bounds. Power MOSFETs first started appearing in 1976 as alternatives to bipolar transistors. These majority carrier devices were faster, more rugged, and had higher current gain than their minor- ity-carrier counterparts. As a result, switching power conversion became a commercial reality. AC-DC switching power supplies for early desktop computers were among the earliest volume consumers of power MOSFETs, followed by variable speed motor drives, fluorescent lights, DC-DC converters, and thousands of other applications that populate our daily lives. One of the earliest power MOSFETs was the IRF100 from International Rectifier Corporation, introduced in November 1978. It boasted a 100 V drain-source breakdown voltage and a 0.1 Ω on-resistance; the benchmark of the era. With a die size over 40 mm2, and with a $34 price tag, this product was not destined to broadly replace the venerable bipolar transistor immediately. Many generations of power MOSFETs have been developed by several manufacturers over the years. Benchmarks were set, and fell, every year or so for 30 plus years.
    [Show full text]
  • Isamu Akasaki(Professor at Meijo University
    Nanotechnology and Materials (FY2016 update) Meeting the challenge of "impossible" technology Succeeded in the practical implementation of blue light-emitting diode! Research in the unattainable territory that won the Nobel Prize The 2014 Nobel Physics Prize was presented to blue LED. The development of blue LED resulted in the three researchers, Professor Isamu Akasaki, Professor commercialization of much brighter and energy-saving Hiroshi Amano and Professor Shuji Nakamura for the white light, thus contributing to energy conservation invention of an efficient blue light-emitting diode (LED). in the world and an improvement of people's lives in Red LEDs and yellow-green LEDs were developed in the areas without sufficient electricity. In addition to their 1960s; however, practical implementation of blue LEDs use as light sources, blue LEDs are now being widely was so difficult that it was even said that "it would be applied in various fields such as information technology, impossible to realize blue LEDs by the end of the 20th transportation, medicine and agriculture. Additionally, century." Amid such a circumstance, Professor Akasaki, the technology to put gallium nitride into practical Professor Amano and Professor Nakamura worked on implementation developed by the three researchers is the high-quality single crystallization and the p-type expected to find various applications in the future, such doping of gallium nitride (GaN), both of which had been as an application in power devices that serve as electric given up by researchers around the world. Their efforts power converters in electric vehicles and smart grids, from the 1980s to the 1990s finally led to their success next-generation power distribution grids,.
    [Show full text]
  • Highly Selective Modification of Silicon Oxide Structures Fabricated by an AFM Anodic Oxidation
    Korean J. Chem. Eng., 25(2), 386-389 (2008) SHORT COMMUNICATION Highly selective modification of silicon oxide structures fabricated by an AFM anodic oxidation Inhee Choi and Jongheop Yi† School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Korea (Received 25 June 2007 • accepted 24 July 2007) Abstract−Anodic oxidation via atomic force microscopy is a promising method for creating submicron-sized silicon dioxide patterns on a local surface. The area patterned by AFM anodic oxidation (AAO) has different chemical prop- erties from the non-patterned area, and thus site-selective modification of patterned surfaces is quite possible. In this study, we combined the AAO with self-assembly method and/or wet chemical etching method for the fabrication of positive and/or negative structures. These locally modified surfaces could be used to the site-selective arrangement and integration of various materials based on a pre-described pattern. Key words: AFM, Anodic Oxidation, Etching, Pattern, Self-assembly INTRODUCTION ification of pre-fabricated silicon oxide structures were successfully achieved by the treatments of organosilanes and etchants. The fabrication of submicron-sized structures, especially those that are silicon-based, has attracted considerable attention due to EXPERIMENTAL the potential applications of such structures, including micro/nano- 1. Materials electromechanical systems (MEMS and NEMS) [1] and miniaturized The following materials and chemicals were used: p-type and devices [2]. For this purpose, a wide variety of fabrication methods <100>-oriented silicon wafers with LPCVD (low pressure chemical have been developed to generate patterns on the nano- and micros- vapor deposition) silicon nitride as a resist, and KOH, IPA (isopropyl cales.
    [Show full text]
  • Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007
    A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL Technical Monitor: R. Matson/F. Posey-Eddy Prepared under Subcontract No. AAT-2-31605-01 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof.
    [Show full text]
  • IEEE Spectrum Gaas
    Proof #4 COLOR 8/5/08 @ 5:15 pm BP BEYOND SILICON’S ELEMENTAL LOGICIN THE QUEST FOR SPEED, KEY PARTS OF MICRO- PROCESSORS MAY SOON BE MADE OF GALLIUM ARSENIDE OR OTHER “III-V” SEMICONDUCTORS BY PEIDE D. YE he first general-purpose lithography, billions of them are routinely microprocessor, the Intel 8080, constructed en masse on the surface of a sili- released in 1974, could execute con wafer. about half a million instructions As these transistors got smaller over the T per second. At the time, that years, more could fit on a chip without rais- seemed pretty zippy. ing its overall cost. They also gained the abil- Today the 8080’s most advanced descen- ity to turn on and off at increasingly rapid dant operates 100 000 times as fast. This phe- rates, allowing microprocessors to hum along nomenal progress is a direct result of the semi- at ever-higher speeds. ALL CHRISTIEARTWORK: BRYAN DESIGN conductor industry’s ability to reduce the size But shrinking MOSFETs much beyond their of a microprocessor’s fundamental building current size—a few tens of nanometers—will be blocks—its many metal-oxide-semiconductor a herculean challenge. Indeed, at some point in field-effect transistors (MOSFETs), which act the next several years, it may become impossi- as tiny switches. Through the magic of photo- ble to make them more minuscule, for reasons WWW.SPECTRUM.IEEE.ORG SEPTEMBER 2008 • IEEE SPECTRUM • INT 39 TOMIC-LAYER DEPOSITION provides one means for coating a semiconductor wafer with a high-k aluminum oxide insulator. The Abenefit of this technique is that it offers atomic-scale control of the coating thickness without requiring elaborate equipment.
    [Show full text]
  • Fundamentals of Gallium Nitride Power Transistors EFFICIENT POWER CONVERSION
    APPLICATION NOTE: AN002 GaN Power Transistors Fundamentals of Gallium Nitride Power Transistors EFFICIENT POWER CONVERSION Stephen L. Colino and Robert A. Beach, Ph.D. The basic requirements for power semiconductors are efficiency, reliability, just below the AlGaN that is highly conductive. controllability, and cost effectiveness. High frequency capability adds further This abundance of electrons is known as a two value in size and transient response in regulators, and fidelity in class D amplifiers. dimensional electron gas (2DEG). Without efficiency and reliability, a new device structure would have no chance of Further processing forms a depletion region under economic viability. There have been many new structures and materials considered; the gate. To enhance the transistor, a positive some have been economic successes, others have seen limited or niche acceptance. voltage is applied to the gate in the same manner Breakthroughs by EPC in processing gallium nitride have produced enhancement as turning on an n-channel, enhancement mode mode devices with high conductivity and hyper fast switching, with a silicon-like cost power MOSFET. A cross section of this structure is depicted in figure 1. This structure is repeated structure and fundamental operating mechanism. many times to form a power device. The end result is a fundamentally simple, elegant, cost effective solution for power switching. This device behaves Operation similarly to silicon MOSFETs with some exceptions EPC’s enhancement mode gallium nitride (eGaN®) Structure that will be explained in the following sections. transistors behave very similarly to silicon power A device’s cost effectiveness starts with leveraging To obtain a higher voltage device, the distance MOSFETs.
    [Show full text]
  • In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates
    applied sciences Article In Vitro Comparison of Bioactive Silicon Nitride Laser Claddings on Different Substrates Elia Marin 1,2 , Matteo Zanocco 1,3 , Francesco Boschetto 1,2, Toshiro Yamamoto 2, Narisato Kanamura 2, Wenliang Zhu 1, Bryan J. McEntire 4 , Bhajanjit Sonny Bal 4, Ryutaro Ashida 5, Osam Mazda 3 and Giuseppe Pezzotti 1,3,6,7,* 1 Ceramic Physics Laboratory, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, Kyoto 606-8585, Japan; [email protected] (E.M.); [email protected] (M.Z.); [email protected] (F.B.); [email protected] (W.Z.) 2 Department of Dental Medicine, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, Kyoto 602-8566, Japan; [email protected] (T.Y.); [email protected] (N.K.) 3 Department of Immunology, Graduate School of Medical Science, Kyoto Prefectural University of Medicine, Kamigyo-ku, 465 Kajii-cho, Kawaramachi dori, Kyoto 602-0841, Japan; [email protected] 4 SINTX Technologies Corporation, 1885 West 2100 South, Salt Lake City, UT 84119, USA; [email protected] (B.J.M.); [email protected] (B.S.B.) 5 Shinsei, Co., Shijohei Kawanishi Rikobo, Kyoto 610-0101, Japan; [email protected] 6 Department of Orthopedic Surgery, Tokyo Medical University, 6-7-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023, Japan 7 The Center for Advanced Medical Engineering and Informatics, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan * Correspondence: [email protected] Received: 9 November 2020; Accepted: 14 December 2020; Published: 17 December 2020 Abstract: The performance, durability, and bio-integration of functional biomedical coatings can be enhanced by changing or improving their substrate properties.
    [Show full text]
  • High-Quality, Low-Cost Bulk Gallium Nitride Substrates
    ADVANCED MANUFACTURING OFFICE High-Quality, Low- Cost Bulk Gallium Nitride Substrates Electrochemical Solution Growth: A Scalable Semiconductor Manufacturing Process The ever-growing demand in the past decade for more energy efficient solid-state lighting and electrical power conversion is leading to a higher demand for wide bandgap semiconductor-based devices, such as gallium nitride (GaN), over traditional silicon (Si)-based devices. High cost and limited availability, how- ever, have hindered the adoption of GaN substrates to date. When utilizing GaN, current LED and power electronic device applications employ GaN epitaxially grown on top of non-GaN substrates. The lattice mismatch between the epitaxial GaN layer and the non-native substrate surface leads to con- siderable stress and high defect densities, ultimately compromising device yield and Conceptual diagram of the ESG reactor. Photo courtesy of Sandia National Laboratories performance. While bulk growth of GaN can combat these issues, current growth methods for bulk GaN have not fostered widespread adoption to date due to lim- This project will help develop ESG into a viable GaN bulk growth process that is well ited scalability, low material quality, high suited for scalability to large-area wafer manufacturing. Bulk GaN is important to bol- operating temperatures and pressures, stering U.S. competitiveness in high-efficiency power electronics and solid-state lighting. and slow growth rates. A fundamentally different manufacturing route for bulk Benefits for Our Industry and Our Nation growth of GaN not driven by thermal pro- Scaling the ESG growth method to large area GaN crystals could reduce the production cesses is needed to provide an adequate cost of bulk GaN wafers by up to a factor of 10.
    [Show full text]
  • Optimization of Wear Loss in Silicon Nitride (Si3n4)–Hexagonal Boron Nitride (Hbn) Composite Using Doe–Taguchi Method
    Ghalme et al. SpringerPlus (2016) 5:1671 DOI 10.1186/s40064-016-3379-7 CASE STUDY Open Access Optimization of wear loss in silicon nitride (Si3N4)–hexagonal boron nitride (hBN) composite using DoE–Taguchi method Sachin Ghalme1,2*, Ankush Mankar3 and Y. J. Bhalerao4 *Correspondence: [email protected] Abstract 2 Mechanical Engineering Introduction: The contacting surfaces subjected to progressive loss of material Department, Manoharbhai Patel Institute of Engineering known as ‘wear,’ which is unavoidable between contacting surfaces. Similar kind of and Technology, Gondia, phenomenon observed in the human body in various joints where sliding/rolling Maharashtra, India contact takes place in contacting parts, leading to loss of material. This is a serious issue Full list of author information is available at the end of the related to replaced joint or artificial joint. article Case description: Out of the various material combinations proposed for artificial joint or joint replacement Si3N4 against Al2O3 is one of in ceramic on ceramic category. Minimizing the wear loss of Si3N4 is a prime requirement to avoid aseptic loosening of artificial joint and extending life of joint. Discussion and evaluation: In this paper, an attempt has been made to investigate the wear loss behavior of Si3N4–hBN composite and evaluate the effect of hBN addition in Si3N4 to minimize the wear loss. DoE–Taguchi technique is used to plan and analyze experiments. Conclusion: Analysis of experimental results proposes 15 N load and 8 % of hBN addi- tion in Si3N4 is optimum to minimize wear loss against alumina. Keywords: Silicon nitride (Si3N4), Hexagonal boron nitride (hBN), Alumina (Al2O3), Design of experiment (DoE), Taguchi technique Background Mechanical behavior of various machine elements, such as gears, cams, wheels, rails and sealing parts are influenced by the interaction between contact elements and surfaces.
    [Show full text]
  • DFB Lasers Between 760 Nm and 16 Μm for Sensing Applications
    Sensors 2010, 10, 2492-2510; doi:10.3390/s100402492 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Review DFB Lasers Between 760 nm and 16 µm for Sensing Applications Wolfgang Zeller *, Lars Naehle, Peter Fuchs, Florian Gerschuetz, Lars Hildebrandt and Johannes Koeth nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany; E-Mails: [email protected] (L.N.); [email protected] (P.F.); [email protected] (F.G.); [email protected] (L.H.); [email protected] (J.K.) * Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +49-931-90827-10; Fax: +49-931-90827-19. Received: 20 January 2010; in revised form: 22 February 2010 / Accepted: 6 March 2010 / Published: 24 March 2010 Abstract: Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spectral region. Furthermore we report on QCL between 3 µm and 16 µm and present new developments. An overview of the most interesting applications using such devices is given at the end of this paper. Keywords: DFB; laser; QCL; sensing Classification: PACS 42.55.Px; 42.62.Fi; 42.62.-b 1. Introduction In recent years the importance of lasers in optical sensing has been continuously increasing [1]. Many apparatus use long-known techniques like fluorescence measurements after excitation by photons, e.g., to detect petroleum contamination in soils [2].
    [Show full text]
  • Study on the Application of Gallium Nitride Transistors in Power Electronics Renan R
    Study on the Application of Gallium Nitride Transistors in Power Electronics Renan R. Duarte, Guilherme F. Ferreira, Marco A. Dalla Costa, Carlos H. Barriquello, J. MarcosSTUDY Alonso ON THE APPLICATION OF GALLIUM NITRIDE TRANSISTORS IN POWER ELECTRONICS Renan R. Duarte1, Guilherme F. Ferreira1, Marco A. Dalla Costa1, Carlos H. Barriquello1, J. Marcos Alonso2 1Universidade Federal de Santa Maria, Santa Maria - RS, Brazil 2Universidad de Oviedo, Gijón, Spain e-mail: {renan.duarte, guilhermefarias, marcodc, barriquello}@gedre.ufsm.br, [email protected] Abstract – Wide bandgap semiconductors have emerged components in the circuit [7]. However, it is necessary to as an attractive option for silicon (Si) replacement in minimize losses in the semiconductors, since these are one of the recent years. Among the new materials, gallium the major limiting factors in power converters [8]. nitride (GaN) has been considered as the most promising Many advances have been made in Si semiconductor candidate. This paper presents an overview of the manufacturing technology, allowing circuits to boost their GaN technology in power electronics. The review power density in a virtually linear trend, increasing about focuses on the main aspects of GaN transistors, such tenfold since they appeared in the market [9]. However, as Si as electrical, thermal and economical characteristics. A technology approaches its theoretical limits of performance, comparison between Si and GaN switching devices in a the need for a substitute of the same relevance becomes more family of synchronous buck converters designed for LED evident. The use of new wide bandgap semiconductors such lighting applications is also presented. This comparison as gallium nitride (GaN) is still rather modest.
    [Show full text]