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Fundamentals of Gallium Nitride Power Transistors EFFICIENT POWER CONVERSION

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Fundamentals of Gallium Nitride Power Transistors EFFICIENT POWER CONVERSION APPLICATION NOTE: AN002 GaN Power Transistors Fundamentals of Gallium Nitride Power Transistors EFFICIENT POWER CONVERSION Stephen L. Colino and Robert A. Beach, Ph.D. The basic requirements for power semiconductors are efficiency, reliability, just below the AlGaN that is highly conductive. controllability, and cost effectiveness. High frequency capability adds further This abundance of electrons is known as a two value in size and transient response in regulators, and fidelity in class D amplifiers. dimensional electron gas (2DEG). Without efficiency and reliability, a new device structure would have no chance of Further processing forms a depletion region under economic viability. There have been many new structures and materials considered; the gate. To enhance the transistor, a positive some have been economic successes, others have seen limited or niche acceptance. voltage is applied to the gate in the same manner Breakthroughs by EPC in processing gallium nitride have produced enhancement as turning on an n-channel, enhancement mode mode devices with high conductivity and hyper fast switching, with a silicon-like cost power MOSFET. A cross section of this structure is depicted in figure 1. This structure is repeated structure and fundamental operating mechanism. many times to form a power device. The end result is a fundamentally simple, elegant, cost effective solution for power switching. This device behaves Operation similarly to silicon MOSFETs with some exceptions EPC’s enhancement mode gallium nitride (eGaN®) Structure that will be explained in the following sections. transistors behave very similarly to silicon power A device’s cost effectiveness starts with leveraging To obtain a higher voltage device, the distance MOSFETs. A positive bias on the gate relative to existing production infrastructure. EPC’s between the Drain and Gate is increased. As the the source causes a field effect which attracts manufacturing utilizes standard CMOS tools to resistivity of GaN 2DEG is very low, the impact on electrons that complete a bidirectional channel fabricate their devices. EPC’s process begins with resistance by increasing blocking voltage capability between the drain and the source. A key difference silicon wafers. Using an MOCVD reactor, a thin is much lower when compared with silicon. between gallium nitride (GaN) and silicon is that layer of aluminum nitride (AlN) is grown on the Figure 2 shows the theoretical resistance times die the electrons in the 2DEG are not associated to silicon to transition the crystal from silicon to GaN. area limits of GaN versus silicon versus voltage. any particular atom, as opposed to being loosely This is a seed layer used to grow a thick layer of EPC’s fifth generation of devices is shown as trapped in a lattice, they have an equal probability highly resistive GaN on the silicon wafer. GaN is well. Please note that after 30 years of MOSFET of being anywhere in the plane. The result is a a wide bandgap material that can support high development, silicon has approached its theoretical channel of resistance much lower than that of voltage at small distances. The GaN layer provides limits. Progress in silicon has slowed to the point silicon. When the bias is removed from the gate, a foundation on which to build the GaN transistor. where small gains have significant development the electrons under it are dispersed into the GaN, An aluminum gallium nitride (AlGaN) layer is cost. GaN is young in its life cycle, and will see recreating the depletion region, and once again, deposited resulting in a piezoelectric polarization, significant improvement in the years to come. giving it the capability to block voltage. with an abundance of electrons being generated 100 V 200 V 101 Si Limit ) 0 2 10 SiC Limit Electron generating layer mm Ω -1 ( 10 Dielectric Aluminum nitride EPC2215 isolation layer DS(on) EPC2218 GaN Limit 10-2 S G D Specic R -3 GaN 10 10-4 Si 101 102 103 104 Breakdown Voltage (V) Figure 1. EPCs’ GaN Power Transistor Structure Figure 2. Theoretical resistance times die area limits GaN vs. silicon vs. voltage EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1 APPLICATION NOTE: AN002 GaN Power Transistors Gate Threshold Capacitance Series Gate Resistance and Leakage The threshold of gallium nitride transistors is lower In addition to the low RDS(on), the lateral structure Series gate resistance (RG) limits how quickly the than that of silicon MOSFETs. This is made possible of the GaN transistor makes it a very low charge capacitance of a field effect transistor can be by the almost flat relationship between threshold device as well. It has the capability of switching charged or discharged. Silicon MOSFETs are limited and temperature along with the very low CGD, hundreds of volts in nanoseconds, giving it multiple to using polysilicon or silicide where GaN transistors as described later. Figure 3 shows the transfer megahertz capability. This capability will lead to use metal gates. The metal gates enable GaN to characteristics curve for the EPC2218, 100 V, 3.2 mΩ smaller power converters, and higher fidelity class have gate resistances of a couple tenths of an (max) transistor. Please note the negative relationship D amplifiers. Most important in switching is GDC . ohm. This low gate resistance also helps with dV/dt between current and temperature. This provides for With the lateral structure, CGD comes only from immunity. excellent sharing all regions of operation, which will a small corner of the gate. An extremely low CGD For isolating the gate, oxide growth is not an option be explained later. Even with significant conduction leads to the very rapid voltage switching capability with GaN. For this reason, the gate leakage current current above 1.7 V, The Ratio of QGD to QGS(th) is 0.8 of GaN transistors. of GaN transistors is higher than that of silicon indicating that the device will be held off regardless CGS consists of the junction from the gate to the MOSFETs. Designers should expect gate leakage of dv/dt. channel, and the capacitance of the dielectric on the order of 1 mA. As these are low gate drive between the gate and the field plate. GDC is very voltage devices, losses associated with gate leakage 200 25˚C small when compared with CGS, giving GaN are low. 125˚C transistors excellent dv/dt immunity. CGS still small Figure of Merit 150 VDS = 3 V when compared with silicon MOSFETs giving them very short delay times, and excellent controllability Total gate charge (QG) is the integral of CGS plus in low duty cycle applications. A 48 V to 1 V buck CGD over voltage. A common figure of merit that 100 regulator has been demonstrated at 1 MHz using takes both on state and switching performance C A into account is (RDS(on) x QG). Figure of merit for GaN 100 V GaN transistors from EPC. C is also small, D DS 50 I being limited to the capacitance across the transistors versus best in class silicon MOSFETs are dielectric from the field plate to the drain and presented in figure 7 for 100 V devices and figure 8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 drain to substrate. Physical capacitance locations for 200 V devices. VGS are shown in figure 5. Capacitance versus voltage curves for GaN again look similar to those for 400 Figure 3. Transfer characteristics curve silicon except that for with a similar resistance, its capacitance is significantly lower and flattens out FOM =RDS(on) x QG (100 V) Resistance much sooner. Capacitance curves for the EPC2218 300 RDS(on) versus VGS curves are similar to MOSFETs. are shown in figure 6. EPC fifth generation GaN transistors are designed CGD to operate with 5 V drive. Figure 4 shows the set of CGS CDS 200 curves for the EPC2218. The curve shows that RDS(on) flattens as the absolute maximum gate voltage is S G approached. As there is negligible gate drive loss D 100 penalty, GaN transistors should be driven with 5 V. GaN The temperature coefficient of RDS(on) of the GaN transistor is also similar to the silicon MOSFET as it 0 is positive with about the same magnitude or 1.52x Figure 5. Physical capacitance locations EPC2218 BRAND A BRAND B BRAND C of the 25°C point at 100°C point for the EPC2218. Figure 7. 1600 3000 1400 8 ID = 12 A ID = 25 A 1200 FOM =RDS(on) x QG (200 V) ID = 37 A COSS = CGD + CSD 6 1000 ID = 50 A CISS = CGD + CGS 800 2000 CRSS = CGD 4 600 Capacitance (pF) 400 2 – Drain-to-Source Resistance (mΩ) 200 1000 DS(on) R 0 0 0 25 50 75 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V VGS – Gate-to-Source Voltage (V) DS Figure 6. Capacitance curves, EPC2218 Figure 4: RDS(on) vs. VGS at various currents 0 EPC2215 BRAND A BRAND B BRAND C Figure 8. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 2 APPLICATION NOTE: AN002 GaN Power Transistors Body Diode Packaging Applications and Value The last part of the performance picture is that of the EPC’s GaN transistors use wafer level packaging using EPC brings enhancement mode to GaN. This allows so-called “body diode”. As seen from figure 1, EPC’s either ball or land grid arrays. The terminal side of the immediate realization of the disruptive gains in GaN transistor structure is a purely lateral device, EPC2218, a 3.5 mm x 1.95 mm, 3.2 mΩ (max.) 100 V efficient high frequency and low duty cycle power absent of the parasitic bipolar transistor common GaN transistor is shown in figure 10.
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