DOCSLIB.ORG

Comparing Magnetron Sputtered Scn

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Comparing Magnetron Sputtered Scn Comparing Magnetron Sputtered ScN Films Grown on Sapphire (1 0 -1 0) and (1 -1 0 2) Substrates Tobin Muratore1,2, Said Elhamri1,2, Amber Reed2, John Cetnar3, David C Look4, Kurt Eyink2, Hadley Smith1,2, Zachary Biegler2,5 1. Department of Physics, University of Dayton, Dayton, OH 45469 2. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson Air Force Base 45433 3. Sensors Directorate, Air Force Research Laboratory, Wright Patterson Air Force Base 45433 4. SEMICONDUCTOR RESEARCH CENTER, WRIGHT STATE UNIVERSITY, DAYTON, 45435; 5. Department of Electro-optics, University of Dayton, Dayton, OH 45469 Goal: To understand how growth parameters impact film properties (crystallinity, resistivity, electron density and mobility) Introduction Experimental Setup Previous Work: ScN (111) on Sapphire (001) and ScN (001) on MgO (001) Ultra high-vacuum, controllably- Sputtering on the Single Ion Level ScN (111) on Sapphire (0001) • Scandium nitride (ScN) is closely lattice matched to GaN (A unbalanced reactive DC-powered Magnetron Power Optimization magnetron sputtering system • Note the improvement in crystal quality semiconductor of interest for high power devices) and 25 W Magnetron 40 W between the two samples (see below), this 50 W Electromagnetic 75 W serves as a good growth template 100 W Coil 200 W change in crystal quality was reflected in almost Load Lock doubled carrier concentration and increased • ScN is a thermally and mechanically robust semiconductor Tantalum mobility. (samples grown at nominally same Foil (direct bandgap 2.1-2.4 eV) with high electron mobility and Intensity Deposition conditions) low resistivity Chamber • This result indicates an unintentional change in Substrate Substrate growth parameters, most likely caused by Location Sample Base Pressure: • Epitaxial ScN has been grown on sapphire [(0001), (10-10), Holders variation in heater resistance ~10-8 Torr (1-102)] using MBE, HVPE, and other methods 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Growth Pressure: 100 W (1st Grow) 2q-w(°) 100000 100 W (2nd Grow) ~20 mTorr 10000 • Our group has successfully grown epitaxial ScN [(111),(001)] Plasma Target to Substrate • Room temp. mobility 1000 on Sapphire (0001) and MgO (001), respectively, using Distance: for ScN (111) ranged [1] 2 100 from 8-14 cm /Vs over (a.u) Intensity magnetron sputtering Controlled Growth Parameters ~5 cm (a.u.) Intensity 10 • Substrate Temperature (500-900°C) the tested magnetron 1 • • Magnetron Power (50 - 200 W) power settings The goal of this study is to grow high crystal quality ScN 0.1 32 34 36 38 40 42 44 33 35 38 40 43 45 [(002), (022)] films with high electron mobility and low • Coil Current (0 - 6 A) 2q-w(°) 2q-w(°) resistivity using a magnetron sputtering system on sapphire • N2 Fraction Al2O3 Substrate Orientation c = 1.291 nm ScN (001) on MgO (001) [(1-102), (10-10)] substrates, respectively Hall Mobility Carrier Concentration Magnetron Power Optimization • To that end, we investigated the impact of various Al2O3 Crystal Structure (Wurtzite) magnetron sputtering growth conditions on the quality of these ScN films. These conditions include substrate a = .4785 nm temperature, magnetron power, nitrogen fraction and ion flux • To evaluate the quality of these films, various Highlights of Previous Studies characterization methods were used, including x-ray Scandium Nitride Properties: diffraction, atomic force microscopy, and Hall effect • Rock salt structure •Oxygen and fluorine impurities play a significant role in • Semiconducting: determining the electrical properties of the ScN films[1] • Results from these various characterization methods on the Direct band gap = 2.1-2.4 eV •For the ScN (002) grown on MgO (001), room temperature ScN films are presented here • High carrier concentration: mobility was in the range of 66 - 97 cm2/Vs with carrier 1019- 1021 cm-3 concentration on the order of 1020 – 1021 cm-3 [1] Results ScN (002), Grown on Sapphire (1 -1 0 2) *All Samples have nominal thickness of 50 nm* ScN (022), Grown on Sapphire (1 0 -1 0) For the Substrate T series: Relaxed d-spacing = .2220 nm Conditions for the coil current series: Magnetron Power = 100 W Relaxed d-spacing = .2029 nm ScN (002) Substrate T Mobility and Resistivity Substrate T: 809°C 50 3.0 Coil Current = 4 A Magnetron Power: 100 W Mobility ) Resistivity Sapphire (10-10) Magnetron Power Sapphire (1-102) Substrate T XRD 2.5 Nitrogen Fraction = 75% (15.0 mTorr) Nitrogen Fraction = 75% (15.0 mTorr) cm 40 50 W 846 °C Sapphire (10-10) Substrate T XRD 75 W Sapphire (1 0 -1 0) Coil Current (Ion Flux) Series 883 °C 2.0 W- Al O (2 0 -2 0) 883 °C Regrow 100 W 2 3 -3 773°C 901 °C 125 W 30 809°C 0 A 920 °C Al2O3 (2 0 -2 0) 150 W 1.5 10 846°C ( (1 -1 0 2) 0 -1 (1 920 °C Regrow (2 -2 0 4) 0 -2 (2 200 W 2 A ScN (0 2 2) ScN (0 2 3 882°C 975 °C 3 ScN (002) 919°C 4 A O O 20 2 2 1.0 956°C 6 A 0) -2 0 (2 Al 3 Al 992°C ScN (0 2 2) ScN (0 2 O 0.5 2 10 Al ScN (0 2 2) ScN (0 2 Mobility (cm²/Vs) Mobility 0.0 Resistivity Intensity (a.u.) 0 880 890 900 910 920 930 940 950 960 Intensity (a.u) Intensity (a.u.) Substrate T (°C) Intensity (a.u.) 920°C: RMS = .162 nm Conditions for the Substrate T series: Magnetron Power = 100 W 55 60 65 70 75 2q-w(°) Coil Current = 4 A 55 60 65 70 75 55 60 65 70 75 ScN (022) Magnetron Power Electrical Properties 20 30 40 50 60 2q-w(°) 0.26 2q-w(°) Nitrogen Fraction = 75% (15.0 mTorr) ) 42 0.24 ScN (022) Substrate T Electrical Properties Mobility 50 2q-w(°) Resistivity 0.22 cm Mobility 0.15 ) 40 Resistivity 0.20 Conditions for the nitrogen fraction series: W- cm 48 0.14 38 0.18 Substrate T: 809°C -3 Conditions for the Magnetron Power Series: W- 0.16 Sapphire (1-102) Power Series XRD 0.13 36 Coil Current = 4 A -3 0.14 10 Substrate T: 883°C 46 ( 0.12 Magnetron Power: 100 W 50 W 10 0.12 ( 34 75 W Coil Current = 4 A 0.10 44 32 Sapphire (1 0 -1 0) N2 Fraction Series XRD 100 W Nitrogen Fraction = 75% (15.0 mTorr) 0.11 0.08 (1-102) 0.06 3 150 W (2-204) 30 ScN (002) Magnetron Power Series Electrical Properties 0.10 (cm²/Vs) Mobility Al O (2 0 -2 0) 3 O 42 0.04 25% 2 3 Mobility (cm²/Vs) Mobility 2 200 W O 2 ) Al 50 50 % ScN (002) Mobility 0.02 0.40 Resistivity Al 28 0.09 Resistivity Resistivity 0.00 75 % 45 cm 40 750 800 850 900 950 40 60 80 100 120 140 160 180 200 220 0.35 100 % 40 W- Substrate T (°C) Magnetron Power (W) ScN (022) 0.30 -3 35 10 ( 956°C: Intensity (a.u.) Conditions for the Magnetron Power Series: 30 0.25 RMS = 4.583 nm Intensity (a.u) 25 Substrate T: 809°C 0.20 20 Coil Current = 4 A Mobility (cm²/Vs) Mobility 0.15 Nitrogen Fraction = 75% (15.0 mTorr) 15 846 °C: Resistivity 10 0.10 RMs = 3.378 nm 20 30 40 50 60 40 60 80 100 120 140 160 180 200 220 55 60 65 70 75 2q-w (°) Magnetron Power (W) 2q-w(°) Summary of Study Future Work • • The crystalline quality of the grown films is not as of high quality as that of ScN Continue N2-fraction study for (1 0 -1 0) orientation and initiate this study for the (1 -1 0 2) • (111). Revisit samples showing atypical crystalline or electrical results • Expand XRD scans to determine crystal structure • Current results indicate (022) ScN is of better quality than (002) ScN based on • Initiate XPS to better understand composition (impurities significantly impact electrical XRD. properties) • Substrate temperature is much more important for the (002) ScN than the (022) • Additional Hall effect measurements of ScN (002) and (022) films. Acknowledgements • The results of our N2 fraction study indicate that optimal growth conditions for This material is based upon work supported by the Air Force Office of Scientific Research under award number FA9550-17RYCOR490-RX. TM would like to thank the Southwestern Ohio (002) require a lower N2 fraction than that of (111) ScN. • The mobility of all measured samples, regardless of the orientation, is lower than Council for Higher Education (SOCHE) that of ScN films grown on MgO (001), but mobility is higher than that of the ScN References 1. Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide (111). substrates ,Appl. Phys. Lett. 113, 192104 (2018); https://doi.org/10.1063/1.5050200 Submitted: 27 July 2018 . Accepted: 25 October 2018 . Published Online: 08 November 2018.
Load more

Recommended publications
  • Growth, Optimization, and Characterization of Transition Metal
    GROWTH, OPTIMIZATION, AND CHARACTERIZATION OF TRANSITION METAL NITRIDES AND TRANSITION METAL OXIDES FOR ELECTRONIC AND OPTICAL APPLICATIONS Thesis Submitted to The School of Engineering of the UNIVERSITY OF DAYTON In Partial Fulfillment of the Requirements for The Degree of Master of Science in Electro-Optics By Zachary Biegler UNIVERSITY OF DAYTON Dayton, Ohio December 2019 GROWTH, OPTIMIZATION, AND CHARACTERIZATION OF TRANSITION METAL NITRIDES AND TRANSITION METAL OXIDES FOR ELECTRONIC AND OPTICAL APPLICATIONS Name: Biegler, Zachary Jay APPROVED BY: Andrew Sarangan, Ph.D., P.E. Amber Reed, Ph.D. Advisory Committee Chairman Committee Member Professor Materials Engineer Department of Electro-Optics and Photonics AFRL/RXAN Partha Banerjee, Ph.D. Committee Member Professor Department of Electro-Optics and Photonics Robert J. Wilkens, Ph.D., P.E. Eddy M. Rojas, Ph.D., M.A., P.E. Associate Dean for Research and Innovation Dean, School of Engineering Professor School of Engineering ii ABSTRACT GROWTH, OPTIMIZATION, AND CHARACTERIZATION OF TRANSITION METAL NITRIDES AND TRANSITION METAL OXIDES FOR ELECTRONIC AND OPTICAL APPLICATIONS Name: Biegler, Zachary J. University of Dayton Advisor: Dr. Andrew Sarangan The next generation of electronic and optical devices require high quality, crystalline materials in order to obtain relevant properties for novel devices. Two classes of materials offer unique material properties that can satisfy the requirements for next generation devices. These two classes of materials are the transition metal nitrides (TMNs) and transition metal oxides (TMOs). These materials offer electronic properties that range from conductive, metallic, materials to semiconducting and insulating materials. However, for many optical and electronic applications, the band structure and crystalline symmetries must be preserved.
    [Show full text]
  • Theoretical Study of Phase Stability, Crystal and Electronic Structure of Memgn2 (Me 5 Ti, Zr, Hf) Compounds
    J Mater Sci (2018) 53:4294–4305 ElectronicELECTRONIC MATERIALS materials Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me 5 Ti, Zr, Hf) compounds M. A. Gharavi1,* , R. Armiento2 , B. Alling2,3 , and P. Eklund1 1 Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83 Linköping, Sweden 2 Theory and Modelling Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83 Linköping, Sweden 3 Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany Received: 6 July 2017 ABSTRACT Accepted: 21 November 2017 Scandium nitride has recently gained interest as a prospective compound for Published online: thermoelectric applications due to its high Seebeck coefficient. However, ScN 30 November 2017 also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a search for other Ó The Author(s) 2017. This semiconductor materials that share the electronic structure features of ScN, but article is an open access which have a lower thermal conductivity. Thus, the focus of our study is to publication predict the existence and stability of such materials among inherently layered equivalent ternaries that incorporate heavier atoms for enhanced phonon scat- tering and to calculate their thermoelectric properties. Using density functional theory calculations, the phase stability of TiMgN2, ZrMgN2 and HfMgN2 compounds has been calculated. From the computationally predicted phase diagrams for these materials, we conclude that all three compounds are stable in these stoichiometries. The stable compounds may have one of two competing crystal structures: a monoclinic structure (LiUN2 prototype) or a trigonal superstructure (NaCrS2 prototype; R3mH).
    [Show full text]
  • Ternary Nitride Semiconductors in the Rocksalt Crystal Structure
    Ternary nitride semiconductors in the rocksalt crystal structure Sage R. Bauersa,1, Aaron Holdera,b, Wenhao Sunc, Celeste L. Melameda,d, Rachel Woods-Robinsona,c,e, John Mangumf, John Perkinsa, William Tumasa, Brian Gormanf, Adele Tambolia, Gerbrand Cederc,g, Stephan Lanya, and Andriy Zakutayeva,1 aMaterials Science Center, National Renewable Energy Laboratory, Golden, CO 80401; bDepartment of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309; cMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720; dDepartment of Physics, Colorado School of Mines, Golden, CO 80401; eApplied Science and Technology Graduate Group, University of California, Berkeley, CA 94720; fDepartment of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401; and gDepartment of Materials Science and Engineering, University of California, Berkeley, CA 94720 Edited by Maw-Kuen Wu, Academia Sinica (Taiwan), Taipei, Taiwan, and approved June 7, 2019 (received for review March 21, 2019) Inorganic nitrides with wurtzite crystal structures are well-known TM nitrides with rocksalt structures. On one hand, the group IV semiconductors used in optical and electronic devices. In contrast, TMs usually exist in 3+ valence states in nitrides (e.g., TiN) (14). rocksalt-structured nitrides are known for their superconducting and On the other hand, introducing electropositive low-valence alkaline + refractory properties. Breaking this dichotomy, here we report ternary earth (AE)cations,suchasMg2 ,couldmoveTMsintohigher nitride semiconductors with rocksalt crystal structures, remarkable oxidation states, closing the d-shell and inducing semiconducting TM electronic properties, and the general chemical formula Mgx 1−xN behavior (15). Furthermore, TM nitride rocksalts are already known (TM = Ti, Zr, Hf, Nb).
    [Show full text]
  • Université Du Québec Thèse Présentée À L
    UNIVERSITÉ DU QUÉBEC THÈSE PRÉSENTÉE À L'UNIVERSITÉ DU QUÉBEC À TROIS-RIVIÈRES COMME EXIGENCE PARTIELLE DU DOCTORAT EN GÉNIE ÉLECTRIQUE PAR ISSAM KERROUM CAPTEURS D'HYDROGÈNE POUR L'INDUSTRIE DE L'AUTOMOBILE ET DE LA SÉCURITÉ OCTOBRE 2016 Université du Québec à Trois-Rivières Service de la bibliothèque Avertissement L’auteur de ce mémoire ou de cette thèse a autorisé l’Université du Québec à Trois-Rivières à diffuser, à des fins non lucratives, une copie de son mémoire ou de sa thèse. Cette diffusion n’entraîne pas une renonciation de la part de l’auteur à ses droits de propriété intellectuelle, incluant le droit d’auteur, sur ce mémoire ou cette thèse. Notamment, la reproduction ou la publication de la totalité ou d’une partie importante de ce mémoire ou de cette thèse requiert son autorisation. ii UNIVERSITÉ DU QUÉBEC À TROIS-RIVIÈRES DOCTORAT EN GÉNIE ÉLECTRIQUE (PH.D.) Programme offert par l'Université du Québec à Trois-Rivières CAPTEURS D'HYDROGÈNE POUR L'INDUSTRIE DE L'AUTOMOBILE ET DE LA SÉCURITÉ PAR ISSAM KERROUM Frédéric Domingue, directeur de recherche Université du Québec à Trois-Rivières Alexandre Reinhardt, codirecteur de recherche CEA-LETI, Grenoble - France Adel-Omar Dahmane, président du jury Université du Québec à Trois-Rivières Adam Skorek, évaluateur interne Université du Québec à Trois-Rivières Charles Richard, évaluateur externe Teledyne DALSA Semiconducteur Thèse soutenue le 03 10 16 ili Résumé Dans le but de minimiser l'impact désastreux des gaz à effet de serre, la communauté scientifique s'est tournée vers l'exploitation de technologies à base d'énergies propres et renouvelables.
    [Show full text]
  • Nitride Thin Films for Thermoelectric Applications: Synthesis, Characterization and Theoretical Predictions
    Linköping Studies in Science and Technology Licentiate Thesis No. 1774 Nitride Thin Films for Thermoelectric Applications: Synthesis, Characterization and Theoretical Predictions Mohammad Amin Gharavi Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM) Linköping University, SE-581 83 Linköping, Sweden Linköping 2017 i Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden © Mohammad Amin Gharavi, 2017 ISBN: 978-91-7685-539-3 ISSN: 0280-7971 Printed by LiU-Tryck, Linköping, Sweden, 2017 ii In the name of the lord of both wisdom and mind To nothing sublimer can thought be applied The lord of whatever is named or assigned A place, the sustainer of all and the guide The Persian epic “The Book of Kings” Abu ʾl-Qasim Ferdowsi Tusi 10th century A.D. iii iv Abstract Thermoelectrics is the reversible process which transforms a temperature gradient across a material into an external voltage through a phenomenon known as the Seebeck effect. This has resulted in niche applications such as solid-state cooling for electronic and optoelectronic devices which exclude the need for a coolant or any moving parts and long-lasting, maintenance-free radioisotope thermoelectric generators used for deep- space exploration. However, the high price and low efficiency of thermoelectric generators have prompted scientists to search for new materials and/or methods to improve the efficiency of the already existing ones. Thermoelectric efficiency is governed by the dimensionless figure of merit 푧푇, which depends on the electrical conductivity, thermal conductivity and Seebeck coefficient value of the material and has rarely surpassed unity.
    [Show full text]
  • Tbiocas 2020 Final
    Edinburgh Research Explorer Ultrasensitive Magnetoelectric Sensing Systemfor pico-Tesla MagnetoMyoGraphy Citation for published version: Zuo, S, Schmalz, J, Ozden , M-O, Özden, M-Ö, Gerken, M, Su, J, Niekiel, F, Lofink, F, Nazarpour, K & Heidari, H 2020, 'Ultrasensitive Magnetoelectric Sensing Systemfor pico-Tesla MagnetoMyoGraphy', IEEE Transactions on Biomedical Circuits and Systems, vol. 14, no. 5, pp. 971 - 984. https://doi.org/10.1109/TBCAS.2020.2998290 Digital Object Identifier (DOI): 10.1109/TBCAS.2020.2998290 Link: Link to publication record in Edinburgh Research Explorer Document Version: Peer reviewed version Published In: IEEE Transactions on Biomedical Circuits and Systems General rights Copyright for the publications made accessible via the Edinburgh Research Explorer is retained by the author(s) and / or other copyright owners and it is a condition of accessing these publications that users recognise and abide by the legal requirements associated with these rights. Take down policy The University of Edinburgh has made every reasonable effort to ensure that Edinburgh Research Explorer content complies with UK legislation. If you believe that the public display of this file breaches copyright please contact [email protected] providing details, and we will remove access to the work immediately and investigate your claim. Download date: 23. Sep. 2021 > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Ultrasensitive Magnetoelectric Sensing System for pico-Tesla MagnetoMyoGraphy Siming Zuo, Student Member, IEEE, Julius Schmalz, Mesut-Ömür Özden, Martina Gerken, Member, IEEE, Jingxiang Su, Student Member, IEEE, Florian Niekiel, Fabian Lofink, Kianoush Nazarpour, Senior Member, IEEE and Hadi Heidari, Senior Member, IEEE Abstract—MagnetoMyoGraphy (MMG) with superconducting ThereFore, the corresPondence betWeen the MMG and EMG quantum interference devices (SQUIDs) enabled the measurement methods is governed by the MaxWell-AmPère law.
    [Show full text]
  • Solid State Metathesis Preparations of Hard Refractory Ceramics
    S o u p S t a t e M e t a t h e s is P reparations OF H a r d R e f r a c t o r y C e r a m i c s A thesis presented by: Artur Marek Nartowski BSc in partial fulfilment for the award of Ph. D. U n iv e r s it y C o l l e g e Lo n d o n D e p t , o f C h e m is t r y ProQuest Number: 10014877 All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. uest. ProQuest 10014877 Published by ProQuest LLC(2016). Copyright of the Dissertation is held by the Author. All rights reserved. This work is protected against unauthorized copying under Title 17, United States Code. Microform Edition © ProQuest LLC. ProQuest LLC 789 East Eisenhower Parkway P.O. Box 1346 Ann Arbor, Ml 48106-1346 Acknowledgements This work was supported by EPSRC and was completed under very helpfiil and encouraging supervision of Dr. I. P. Parkin. Grateful acknowledgement is due to members of staff, especially Dr. C. Carmalt, Prof. A. J. Craven, Dr. M. MacKenzie and the departmental microanalyst. I am also indebted to my fellow students, in particular, L.
    [Show full text]
  • Delta-Phase Manganese Gallium on Gallium Nitride: a Magnetically Tunable Spintronic System
    Mater. Res. Soc. Symp. Proc. Vol. 1118 © 2009 Materials Research Society 1118-K06-06 Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Kangkang Wang 1, Abhijit Chinchore 1, Wenzhi Lin 1, Arthur Smith 1 and Kai Sun 2 1Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A. 2Department of Materials Sciences and Engineering, University of Michigan, Ann Arbor, MI 48109, U.S.A. ABSTRACT Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth on wurtzite GaN, Ga-polar surface promotes quicker interface formation, and also results in better crystalline quality of the MnGa film, as compared to N-polar. The crystal orientation and magnetic anisotropy are found to be different than those grown on cubic scandium nitride substrates. INTRODUCTION Ferromagnetic metal/semiconductor layered structures are of great interest due to their potential for novel spintronics applications such as spin light-emitting diodes [1] . Delta phase [2] manganese gallium, a ferromagnetic alloy with high magnetic moments (~2.51 μB/Mn atom ) and Curie temperature above room temperature, appears to be a promising candidate for such applications. There have been several reports [3,4] on epitaxial growth of δ-MnGa on zinc-blende GaAs(001) substrates, where perpendicular magnetization was found. Furthermore, it was recently reported [5] that ferromagnetic δ-MnGa can be grown epitaxially on top of wide band-gap Ga-polar wurtzite GaN(0001), with controllable magnetism by adjusting slightly the Mn:Ga atom concentration.
    [Show full text]
  • Synthesis Parameter Influence on the Properties of Boron Doped
    International Journal of Scientific & Engineering Research, Volume 5, Issue 11, November-2014 1522 ISSN 2229-5518 Synthesis Parameter Influence on the Properties of Boron Doped Aluminum Nitride Thin Film Prepared by Co-sputtering Zeng Yin Ong, Subramani Shanmugan, Devarajan Mutharasu Abstract— Boron doped AlN (B,Al)N thin film on Si substrate was synthesized by co-sputtering using Al and B target at various gas mixture ratio (Ar : N 2) and substrate temperatures. The prepared thin film was polycrystalline nature. The structural properties of prepared thin film was verified by XRD and the formation hexagonal AlN with (100) and (110) phases are confirmed. BN phases with different orientation was also noticed with the synthesized samples prepared at gas mixture ratio of Ar (6): N 2 (14) and Ar (8): N 2 (12). The intensity of the preferred peak increases as the N 2 gas ratio increases in the reaction gas mixture. The crystallinity was improved for the film prepared at 100°C substrate temperature using Ar (7): N 2 (13) gas mixture ratio. The surface morphology was evaluated using SEM and AFM and observed dense surface for the film prepared at 100°C substrate temperature. The film prepared at gas mixture ratio of Ar (8): N 2 (12) showed high surface roughness and particle size too. Overall, the gas mixture ratio and the substrate temperatures were influenced the growth of B doped AlN thin film on both structural and surface properties considerably. Index Terms AlN, doping, thin film, co-sputtering, gas ratio, structural properties, surface properties. —————————— —————————— 1 INTRODUCTION roup III nitrides gain their great significance in electronic vantages over high temperature techniques such as low sub- and optoelectronic applications due to their advantages strate temperature, good process control, high homogeneity Gi n wide band gap, thermal conductivity, thermal stabil- along large substrate surface and good adhesion of the film ity, and mechanical strength [1]-[2].
    [Show full text]
  • Phonon Thermal Conductivity of Scandium Nitride for Thermoelectrics from Rst- Principles Calculations and Thin-Lm Growth
    View metadata,Downloaded citation and from similar orbit.dtu.dk papers on:at core.ac.uk Dec 20, 2017 brought to you by CORE provided by Online Research Database In Technology Phonon thermal conductivity of scandium nitride for thermoelectrics from rst- principles calculations and thin-lm growth Kerdsongpanya, Sit; Hellman, Olle ; Sun, Bo ; Koh, Yee Kan ; Lu, Jun; Van Nong, Ngo; Simak, Sergei I. ; Alling, Björn ; Eklund, Per Published in: Physical Review B Link to article, DOI: 10.1103/PhysRevB.96.195417 Publication date: 2017 Document Version Peer reviewed version Link back to DTU Orbit Citation (APA): Kerdsongpanya, S., Hellman, O., Sun, B., Koh, Y. K., Lu, J., Van Nong, N., ... Eklund, P. (2017). Phonon thermal conductivity of scandium nitride for thermoelectrics from rst-principles calculations and thin-lm growth. Physical Review B, 96(19), [195417]. DOI: 10.1103/PhysRevB.96.195417 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.
    [Show full text]
  • Ingénierie Des Défauts Cristallins Pour L'obtention De Gan Semi-Polaire
    Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques Florian Tendille To cite this version: Florian Tendille. Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques. Autre [cond-mat.other]. Université Nice Sophia Antipolis, 2015. Français. NNT : 2015NICE4094. tel-02947430 HAL Id: tel-02947430 https://tel.archives-ouvertes.fr/tel-02947430 Submitted on 24 Sep 2020 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. UNIVERSITE NICE-SOPHIA ANTIPOLIS - UFR Sciences Ecole Doctorale de Sciences Fondamentales et Appliquées THESE pour obtenir le titre de Docteur en Sciences de l’UNIVERSITE de Nice -Sophia Antipolis Discipline : Physique présentée et soutenue par Florian TENDILLE Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques Thèse dirigée par Philippe VENNÉGUÈS et co-dirigée par Philippe DE MIERRY Soutenue publiquement le : 24-11-2015 Jury : N. Grandjean Professeur, EPFL - LASPE, Lausanne Rapporteur T. Baron Directeur de recherche, CNRS/CEA - LTM, Grenoble Rapporteur E. Monroy Ingénieur chercheur, CEA - INAC, Grenoble Examinateur B.
    [Show full text]
  • Scandium Nitride Buffer for Gallium Nitride on Silicon Applications
    84 Technology focus: Nitride materials Scandium nitride buffer for gallium nitride on silicon applications Researchers grow a twin-free single-crystal ScN epitaxial layer as a buffer giving small mismatch for GaN-on-Si. esearchers in Germany are proposing The researchers comment that “based on the use of scandium nitride (ScN) as a suitable buffer for highly insulating oxides, the ScN/Sc2O3/Y2O3/Si buffer Rgallium nitride (GaN) on silicon (Si) growth approach can, in principle, be further engineered for [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, improved electrical breakdown field strength with 2015]. The attraction of ScN is a very small mismatch respect to the Si interface, which is of importance for with GaN of less than 0.1%. This compares with the high-power/high-frequency applications of GaN-on-Si GaN/Si mismatch of ~17%. systems.” However, when ScN is grown directly on silicon the The researchers prepared templates with Sc2O3 and resulting material suffers from serious crystal defects. Y2O3 layers on 4-inch (111) silicon (Sc2O3/Y2O3/Si) by The team — from IHP, Technische Universität Berlin, molecular beam epitaxy. The scandium nitride was Siltronic AG, and BTU Cottbus — has developed a grown on the template in a plasma-assisted molecular growth technique where yttrium (Y2O3) and scandium beam epitaxy (PAMBE) reactor chamber with electron- (Sc2O3) oxide are grown first. These layers allow beam evaporation of elemental scandium and nitrogen single-crystal layers of ScN to be developed that avoid radio-frequency plasma as sources. stacking faults away from the interface. The mismatch X-ray and electron microscope analysis showed that between ScN and Sc2O3 is estimated at 8.5%.
    [Show full text]