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Phys 586 Laboratory Lab11
Phys 586 Laboratory Lab11 Goal: In this lab you will make measurements with a photodiode. While not the same type of diode used in diode arrays for radiation planning or microstrip detectors in high energy physics, many of the basic device characteristics are the same. Additionally, photodiodes are used in x-ray imaging (along with a scintillator layer) and avalanche photodiodes find application in high energy physics. Reading: See Photodiode Characteristics article in the Readings. Lab: 1. Construct the LED circuit shown in Figure 1. a) Is the LED forward or reverse biased? The LED is forward biased. b) What is the purpose of the resistor? The value of the resistor is chosen so that the specified LED operating current results in the desired LED voltage drop. The value that this resistor should have can be determined using Kirchhoff’s loop rule and Ohm’s Law. Vary the voltage and convince yourself the brightness of the LED changes. Note the longer leg on the LED is the anode. 1 2. Measure the current through the LED and the voltage across the LED for LED supply voltages of 2.5, 5, 8, 10, 13, 15, 18 and 20V. LED LED LED Supply Voltage Current Voltage (V) (V) (mA) 2.5 1.67 2.46 5.01 1.76 4.91 8.01 1.82 7.8 10.05 1.85 9.9 13 1.9 12.83 15 1.92 14.9 18 1.96 17.82 20 1.99 20.1 Circuit 1: LED Current vs LED Voltage 25 20 15 10 LED Current (mA) 5 0 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 LED Voltage (V) 2 3. -
Photodiode and LIGHT EMITTING DIODE
Photodiode and LIGHT EMITTING DIODE Presentation by JASWANT KUMAR ROLL NO.-12 rd IT(3 SEM.) 1 About LEDs (1/2) • A light emitting diode (LED) is essentially a PN junction opto- semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. • LEDs convert electrical energy into light energy. LED SYMBOL 2 ABOUT LEDS (2/2) • The most important part of a light emitting diode (LED) is the semi-conductor chip located in the center of the bulb as shown at the right. • The chip has two regions separated by a junction. • The junction acts as a barrier to the flow of electrons between the p and the n regions. 3 LED CIRCUIT • In electronics, the basic LED circuit is an electric power circuit used to power a light-emitting diode or LED. The simplest such circuit consists of a voltage source and two components connect in series: a current-limiting resistor (sometimes called the ballast resistor), and an LED. Optionally, a switch may be introduced to open and close the circuit. The switch may be replaced with another component or circuit to form a continuity tester. 4 HOW DOES A LED WORK? • Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. • For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi- conductor material. 5 Mechanism behind photon emission in LEDs? MechanismMechanism isis “injection“injection Electroluminescence”.Electroluminescence”. -
DESIGN and EVALUATION of CONTROLS for DRIFT, VIDEO GAIN, and COLOR BALANCE in SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrber
NASA TECHNICAL NOTE @ NASA Tli D-73.3 m % & m U.S.A. m (NASA-TN-D-7333) DESIGN AND EVALUATION OP CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS (NASA) 33 p HC $3.00 CSCL 14E Unclas 4 81/10 23462 Z DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrberg, W. Lane Kelly IV, QR~Q~F~&$.MH?AlMS Carroll W. Rowland, and Ernest E. Burcher GQdhU.* . .b"'3H8 Langley Research Center Humpton, Vu. 23665 NATIONAL AERONAUTICS AND SPACE ADMINISTRATION WASHINGTON, D. C. DECEMBER 1973 1. Report No. a. Government Accasrion No. 3. Recipient's Catalog No. NASA TN D-7333 4. Title and Subtitle 5. Report Date DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, December 1973 VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE 6. Performing Organization Code FACSIMILE CAMERAS 7. Author(s1 8. Performing Organization Rwrt No. Stephen J. Katzberg, W. Lane Kelly IV, Carroll W. Rowland, L-8845 and Ernest E. Burcher 10. Work Unit No. g. Rrforming Organintion Name and Addrerr 502-03-52-04 NASA Langley Research Center 11. Contract or Grant No. Hampton, Va. 23665 13. Type of Repon and Period Covered 12. Sponsoring Agency Name and Addresr Technical Note National Aeronautics and Space Administration 14. Sponsoring Agency Code Washington, D.C. 20546 15:' Subplementary Notes 16. AbsuaR The facsimile camera is an optical-mechanical scanning device which has become an attractive candidate as an imaging system for planetary landers and rovers. This paper presents electronic techniques which permit the acquisition and reconstruction of high-quality images with this device, even under varying lighting conditions. -
Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits
Sensors and Materials, Vol. 13, No. 4 (2001) 189-206 MYUTokyo S &M0442 Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits Horst Zimmermann Institut fiirElektrische Mess- und Schaltungstechnik, Technische Universitat Wien, Gusshausstrasse, A-1040 Wien, Austria (Received February 28, 2000; accepted February3, 2001) Key words: integrated circuits, integrated optoelectronics, optical receivers, optoelectronic de vices, PIN photodiode, double photodiode, silicon A review of the properties of photodiodes available through the use of standard silicon technologies is presented and some examples of how to improve monolithically integrated photodiodes are shown. The application of these photodiodes in optoelectronic integrated circuits (OEICs) is described. An innovative double photodiode requiring no process modificationsin complementary metal-oxide sem!conductor (CMOS) and bipolar CMOS (BiCMOS) technologies achieves a bandwidth in excess of 360 MHzand data rates exceeding 622 Mb/s. Furthermore, a new PIN photodiode requiring only one additional mask for the integration in a CMOS process is capable of handling a data rate of 1.1 Gb/s. Antireflection coating improves the quantum efficiencyof integrated photodiodes to values of more than 90%. Integrated optical receivers for data communication achieve a high bandwidth and a high sensitivity. Furthermore, an OEIC for application in optical storage systems is introduced. Author's e-mail address: [email protected] 189 l 90 Sensors and Materials, Vol. 13, No. 4 (2001) 1. Introduction Photons with an energy larger than the band gap generate electron-hole pairs in semiconductors. This photogeneration G obeys an exponential law: aP,0 G( x) = -- exp( -ax), Ahv (1) where xis the penetration depth coordinate, P0 is the nonreflectedportion of the incident optical power, A is the light-sensitive area of a photodiode, hv is the energy of the photon, and a is the wavelength-dependent absorption coefficient. -
Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias. -
A Customized Stand-Alone Photometric Raman Sensor Applicable in Explosive Atmospheres: a Proof-Of-Concept Study
J. Sens. Sens. Syst., 7, 543–549, 2018 https://doi.org/10.5194/jsss-7-543-2018 © Author(s) 2018. This work is distributed under the Creative Commons Attribution 4.0 License. A customized stand-alone photometric Raman sensor applicable in explosive atmospheres: a proof-of-concept study Marcel Nachtmann1, Shaun Paul Keck1, Frank Braun1, Hanns Simon Eckhardt2, Christoph Mattolat2, Norbert Gretz3, Stephan Scholl4, and Matthias Rädle1 1Institute for Process Control and Innovative Energy Conversion, Mannheim University of Applied Sciences, Mannheim, 68163, Germany 2tec5 AG, Oberursel/Ts, 61440, Germany 3Medical Research Center, Medical Faculty Mannheim, Heidelberg University, Mannheim, 68167, Germany 4Institute for Chemical and Thermal Process Engineering, Technical University Braunschweig, Braunschweig, 38106, Germany Correspondence: Matthias Rädle ([email protected]) Received: 29 March 2018 – Revised: 12 September 2018 – Accepted: 14 September 2018 – Published: 12 October 2018 Abstract. This paper presents an explosion-proof two-channel Raman photometer designed for chemical pro- cess monitoring in hazardous explosive atmospheres. Due to its design, alignment of components is simplified and economic in comparison to spectrometer systems. Raman spectrometers have the potential of becoming an increasingly important tool in process analysis technologies as part of molecular-specific concentration monitor- ing. However, in addition to the required laser power, which restricts use in potentially explosive atmospheres, the financial hurdle is also high. Within the scope of a proof of concept, it is shown that photometric measure- ments of Raman scattering are possible. The use of highly sensitive detectors allows the required excitation power to be reduced to levels compliant for operation in potentially explosive atmospheres. -
LED Circuit and Device Physics 120 Pts Objective: Meas
Applied Quantum Mechanics for Electrical Engineers Workshop III – LED Circuit and Device Physics 120 pts Objective: Measure the voltage drop across an LED in a simple circuit, demonstrate that the voltage drop is proportional to the band gap of the semiconductor material, and analyze the behavior of the circuit in terms of the device physics of the PN junction. Background: A light emitting diode (LED) is a device that is designed by fabricating a PN junction or diode as illustrated in Figure 1. Figure 1. Schematic of LED and illustration of carrier movement resulting in emission of light. Image: http://blog.ucsusa.org/wp-content/uploads/2014/10/UCS-LED-how-it-works-graphic.gif A simple PN junction can be fabricated by growing a p-type material on top of an n-type material, or by doping an n-type material with sufficient p-type dopants so that the surface becomes p-type. The energy band diagram for a PN Junction under forward bias conditions is illustrated in Figure 2, along with a schematic of the circuit under forward bias. Figure 2. LED circuit and PN Junction energy band diagram illustrating carrier movement under forward bias. Image: http://www.vit.ac.in/onlinelab/m9.aspx The application of a forward bias to the circuit results in a decrease in the barrier to electron movement from the n-side to the p-side. Likewise, the barrier of hole movement from the p- side to the n-side is also reduced. Thus, majority carriers from each side are able to cross the energy barrier. -
Input-Output Transfer Function Analysis of a Photometer Circuit Based on an Operational Amplifier
Sensors 2008, 8, 35-50 sensors ISSN 1424-8220 © 2008 by MDPI www.mdpi.org/sensors Input-output Transfer Function Analysis of a Photometer Circuit Based on an Operational Amplifier Wilmar Hernandez Department of Circuits and Systems in the EUIT de Telecomunicacion at the Universidad Politecnica de Madrid (UPM), Campus Sur UPM, Ctra. Valencia km 7, Madrid 28031, Spain Phone: +34913367830. Fax: +34913367829. E-mail: [email protected] Received: 22 December 2007 / Accepted: 7 January 2008 / Published: 9 January 2008 Abstract: In this paper an input-output transfer function analysis based on the frequency response of a photometer circuit based on operational amplifier (op amp) is carried out. Op amps are universally used in monitoring photodetectors and there are a variety of amplifier connections for this purpose. However, the electronic circuits that are usually used to carry out the signal treatment in photometer circuits introduce some limitations in the performance of the photometers that influence the selection of the op amps and other electronic devices. For example, the bandwidth, slew-rate, noise, input impedance and gain, among other characteristics of the op amp, are often the performance limiting factors of photometer circuits. For this reason, in this paper a comparative analysis between two photodiode amplifier circuits is carried out. One circuit is based on a conventional current- to-voltage converter connection and the other circuit is based on a robust current-to-voltage converter connection. The results are satisfactory and show that the photodiode amplifier performance can be improved by using robust control techniques. Keywords: photometer circuit, current-to-voltage converter connection, frequency response, robust control Sensors 2008, 8 36 1. -
LUXEON Illumination Leds Circuit Design and Layout Practices to Minimize Electrical Stress
ILLUMINATION LUXEON Illumination LEDs Circuit Design and Layout Practices to Minimize Electrical Stress Introduction LED circuits operating in the real world can be subjected to various abnormal electrical overstress situations. Among the most common are: • Isolation test during validation or production of the luminaire (“hi-pot test”) • Lightning strikes and line transients • Hot-swapping of LED circuits (disconnecting and reconnecting an LED circuit board to the driver while the driver remains powered up) • Driver failures • ESD (Electro-Static Discharge) Scope This paper presents background information on some of these overstress modes and discusses recommendations to minimize the potentially destructive effects of electrical overstress on LEDs. AB06 LUXEON LEDs Application Brief ©2016 Lumileds Holding B.V. All rights reserved. Table of Contents Scope . 1 1 . Electrical Overstress . 3 2 . Isolation Test Requirements . 3 3 . Isolation Test on an LED Board . 4 4 . LUXEON Rebel LED Circuit Model on a Board . 5 5 . Electrical Stress Simulation during Isolation Test . 6 6 . Protection Circuits . 8 7 . High Voltage Drivers . 10 8 . Lightning Strikes and Line Transients . 11 9 . Recommendations . 11 About Lumileds . 12 AB06 LUXEON LEDs Application Brief 20170605 ©2017 Lumileds Holding B.V. All rights reserved. 2 1. Electrical Overstress Electrical Overstress (EOS) can present itself to an LED array in two forms, either as excess voltage or excess current. Because voltage and current are interrelated, it is not always possible to identify whether a high voltage or high current caused a failure. Currents can flow through an LED array in two ways: differential mode and common mode (see Figure 1). Differential mode currents can be very destructive. -
Photoelectric Spectrophotometry by the Null Method'
. PHOTOELECTRIC SPECTROPHOTOMETRY BY THE NULL METHOD' By K. S. Gibson CONTENTS Page I. Introduction 325 II. Spectral transmission 329 1. Apparatus 329 2. Method 333 3 Errors and accuracy 337 III. Diffuse spectral reflection 348 IV. Other applications 350 V. Summary 352 I. INTRODUCTION Anyone who has had experience in trying to make spectro- photometric measurements of transmission or reflection in the blue and violet parts of the spectrum is well aware of the difficulty of obtaining reliable determinations in this region. Nearly all methods have relatively low sensitivity, or else are inaccurate for other reasons, from wave lengths 400 to 500 millimicrons (m/x). Radiometric methods, which are so suitable for infra-red work and which have been used also in the visible and even in the ultra- violet, are, nevertheless, not of the highest accuracy in these latter regions because of the relatively low radiant power of all sources used for this kind of work, the radiant power decreasing continuously with the wave length. It is very difficult to obtain accurate determinations below 500 m/x by the usual radiometric methods. Any visual method is limited in the blue and violet because of the combined low visibility of the human eye and the low radiant power of the sources used, except at the few wave lengths where monochromatic light of great intensity can be ob- tained, as from the mercury arc. The Hilger sector photometer method, which is the only photographic method of speed and reliability, also has its limitations for this region. Being such a 1 An abst-act of this paper was presented to the Optical Society of America at the Baltimore meet- ing, Dec, 27, 1918. -
The Importance of Leds in Switches
WHITEPAPER The Importance of LEDs in Switches LEDS PROVIDE ADDITIONAL OPTIONS FOR DESIGNERS AND IMPROVE THE FUNCTIONALITY OF THE SWITCH NKK SWITCHES THE IMPORTANCE OF LEDs IN SWITCHES Why put an LED on a switch? LEDs are a simple, compact way to indicate the status of a circuit. By having the LED in the switch, it reduces space and component count for an assembly. There are many ways to control LEDs. Some indicator circuits use the switch’s own circuity in an ON-OFF fashion. Others are bicolor or even RGB and are hooked up to a microprocessor to give additional visual feedback. Most of the illuminated switches available at NKK Switches have the LED circuit separate from that of the switching circuit. This is to provide maximum flexibility for design. 1. The two circuits found in an illuminated switch (single pole) Switching Circuit LED Circuit UB2 1 L (+) L(+) NC NC R1 +VDC Switching NO NO LED Circuit Circuit 3 2 GND L(-) L (-) COM COM The simple indicator circuit shown above is one that uses a spare pole on the switch to turn OFF and ON the LED to show that a circuit is connected. This type of circuit just shows the state of the switch, either OFF or ON, with the reasonable assumption that if the LED is illuminated then the load circuit is active as well. 2. Simple single LED ON-OFF indicator using the second pole of a double pole switch to light the LED. The dotted line indicates that the two poles are mechanically connected to each other. -
Application of Filter Photometers in the Production of Ethylene and Propylene
Analytical Products Sales Engineering Application of Filter Photometers in the Production of Ethylene and Propylene SC7-66-403 Gary D. Brewer APPLICATION OF FILTER PHOTOMETERS IN THE PRODUCTION OF ETHYLENE AND PROPYLENE Gary D. Brewer Product Manager, Photometers ABB Inc. 843 N. Jefferson St. Lewisburg, WV 24901 KEYWORDS Photometer, Infrared Spectroscopy, IR, Near Infrared Spectroscopy, NIR, Ultraviolet Spectroscopy, UV, Ethylene, Propylene ABSTRACT There have been several successful applications of process filter photometers in ethylene plants throughout the world. The process of manufacturing ethylene is extremely fast; therefore, the continuous measurements provided by filter photometers allow for a fast response to process changes for better control and process optimization. The capability of the current generation of filter photometers to use several analytical wavelengths to compensate for spectral interferences have allowed their use in measurements that previously could not be done by photometers. The high reliability and simplicity of filter photometers make them a valuable tool in the process control of an olefins plant. Applications in the IR and NIR spectral regions in both the vapor and liquid phases will be discussed to demonstrate their capabilities and benefits in this manufacturing process. Applications that will be discussed include the measurement of acetylene and ethane at the acetylene converters and the measurement of methyl acetylene and propadiene (MAPD) at the MAPD converters can be measured on a single infrared photometer. Applications at the caustic wash tower and the measurement of carbon dioxide at the furnace decoke will also be discussed. INTRODUCTION Ethylene is one of the highest volume chemicals produced in the world.