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Chin. Phys. B Vol. 23, No. 2 (2014) 028103

Transparent conductive graphene films prepared by hydroiodic acid and thermal reduction∗

Qin Meng-Meng(秦盟盟), Ji Wei(纪 伟), Feng Yi-Yu(冯奕钰), and Feng Wei(封 伟)† School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China

(Received 31 March 2013; revised manuscript received 29 May 2013; published online 10 December 2013)

Transparent conductive graphene films are fabricated by the transfer printing of graphene aqueous dispersion followed by hydrohalic acids and thermal reduction. Results indicate that the graphene film reduced by hydroiodic acid (HI) reduction combined with thermal treatment shows a higher electrical conductivity than that reduced only by thermal treatment at the same transparency. A film with a sheet resistance of ∼ 2400 Ω/sq at a transparency over 72% is obtained at a typical wavelength of 550 nm.

Keywords: graphene, hydroiodic acid, thermal reduction, sheet resistance PACS: 81.05.ue, 81.05.U–, 68.65.Pq DOI: 10.1088/1674-1056/23/2/028103

1. Introduction prepared the hydrazine-reduced graphene TCFs followed by thermal treatment, and the resulting graphene film possessed Owing to its unique two-dimensional structure, remark- a lower sheet resistance with a high transparency. Similarly, able electrical conductivity, and optical transmittance to vis- Zheng et al.[16] prepared the Langmuir–Blodgett TCFs con- ible and near-infrared light, graphene is promising to be sisting of ultra-large graphene sheets, and obtained a remark- an ideal material for use as transparent conductive films able sheet resistance of 500 Ω/sq at 90% transparency after (TCFs), replacing traditional indium tin oxide (ITO).[1–3] thermal reduction and chemical doping treatments. TCFs based on graphene oxide (GO) obtained by chemi- Both thermal annealing and HI reduction can be used to cal exfoliation are of great value in large-scale and low-cost reduce GO into graphene films. However, the treatment on GO production, since they can be easily assembled into films through HI reduction combined with high temperature thermal by well-established processes such as vacuum filtration,[4] annealing has not been reported. In this report, graphene TCFs dip-coating,[5] spray coating,[6] and the Langmuir–Blodgett[7] are fabricated by HI and thermal reduction. Results demon- film technique. However, due to the disruption of graphitic strate that the as-prepared TCF shows a higher electrical con- networks, oxygen-containing functional groups attached to ductivity than that reduced only by thermal treatment at the GO make the assembled film almost insulating.[8] Therefore, same transmittance. a deoxygenating process must be followed.[9,10] Several methods can be utilized to deoxygenate GO, in- cluding high temperature thermal annealing[11,12] and low 2. Experiment temperature chemical reduction.[13] Generally, the former is 2.1. Preparation of GO sheets effective for high C/O atomic ratio, but usually needs a tem- Graphene oxide was prepared using the modified Hum- perature above 1000 ◦C, while the latter can be conducted at a mers method[17] from graphite flakes. Graphite (2 g) and ◦ temperature lower than 100 C, which is extremely important NaNO3 (2 g) were mixed in 92-mL concentrated H2SO4 at [13] [14] ◦ for practical applications. Recently, Song et al. studied 0 C. The 12-g KMnO4 was gradually added into the above the effect of thermal treatment on the structure of graphite ox- mixture with stirring in an ice–water bath. The mixture was ide material, indicating that the oxygen-rich GO layers were first stirred at 0 ◦C for 2 h and then at 35 ◦C for 2 h. Distilled rearranged into highly ordered hexagonal carbon lattices af- water (80 mL) was slowly added to dilute mixture over around [13] ter high-temperature treatment. Pei et al. presented a sim- 30 min. Then 200-mL distilled water and 10-mL H2O2 (30%) ple, highly-effective reduction method of GO films using hy- were added to the mixture sequentially, and the stirring con- droiodic acid (HI), and the film prepared shows a higher elec- tinued for 30 min to obtain a graphite oxide suspension. The trical conductivity and C/O atomic ratio, as well as good flexi- graphite oxide deposit was collected by high-speed centrifu- bility and structural integrity. The combination of the thermal gation, and repeatedly washed with diluted H2SO4 and dis- and chemical reduction has also been reported. Wang et al.[15] tilled water until the pH = 7 was reached. A mild sonication ∗Project supported by the National Key Basic Research Program of China (Grant Nos. 2012CB626800 and 2010CB934700) and the National Natural Science Foundation of China (Grant Nos. 51073115, 51003072, 51173127, and 51273144). †Corresponding author. E-mail: [email protected] © 2014 Chinese Physical Society and IOP Publishing Ltd http://iopscience.iop.org/cpb http://cpb.iphy.ac.cn 028103-1 Chin. Phys. B Vol. 23, No. 2 (2014) 028103

(100 W, 20 min) was used to exfoliate the graphite oxide to ob- the surface. The folded and rich-wrinkled layer morphology tain a GO suspension. Low-speed centrifugation at 2000 rpm could improve the cross section of GO film and the electrode was used to remove thick multilayers. The supernatant was active area, which make the stable and uniform GO film an further centrifuged at 4000 rpm for 5 min to separate large ideal candidate for electrode application.[19] flakes (precipitate) from small flakes (supernatant). Finally, the obtained precipitates containing large flakes were dried in a vacuum oven at 60 ◦C for 24 h.

2.2. Fabrication of GO films Substrates of graphene films were 20 mm×20 mm square quartz slides washed with deionized water, acetone, and ethanol, orderly, and then the clean substrates were dried in a vacuum at 60 ◦C for 24 h. The GO films were fabricated through a vacuum filtration method. The thickness of the films nm was controlled by varying the volumes of colloids. The filtra-  tion membranes, whose surfaces the graphene films had been Fig. 1. (color online) AFM image of GO sheet. deposited on, were pasted onto the quartz substrates with the film surfaces facing the substrate surface. After the films were fully dried on the substrates, the filtration membranes were dissolved in acetone, leaving the transparent graphene films on the substrates.

2.3. Reduction of GO films Two methods were used to reduce GO films respectively. One method was to perform direct 1100 ◦C thermal anneal- ◦ ing (RGO1100 ◦C). The films were heated to 1100 C at a rate of 10 ◦C/min and the temperature was held constant at 1100 ◦C for 1 h. To avoid burning the graphene films at such Fig. 2. (color online) SEM image of GO sheet. a high temperature, the furnace was purged with a mixture of hydrogen and argon for the whole process of heat treat- Figure3 shows the typical transmission electron mi- ment. The other method was to combine HI reduction with croscopy (TEM) image of the graphene collected from the ◦ ◦ ◦ graphene suspension prior to the filtration. It shows a wrinkled 400 C, 700 C, 1100 C thermal annealing (RGOHI+1100 ◦C), and the films were treated as follows. Before thermal anneal- silk-like structure in low magnification. The corrugation of the 2 ing, the films were immersed in an HI aqueous solution (45%) GO sheet is attributed to the disruption of the planar sp car- 3 at 100 ◦C for 100 s, and then washed repeatedly with ethanol to bon sheet by the introduction of sp -hybridized carbon upon [20] remove the residual HI. To further remove the residual oxygen oxidation. Additionally, single-layer graphene is observed functional groups and thus improve the electrical conductivity, at the edge of the as-prepared graphene in high magnification. The selected area electron diffraction (SAED) pattern in the the as-produced graphene films were heat treated as above. inset indicates a crystalline structure. 3. Results and discussion 3.1. Surface morphology of GO sheet Figure1 shows the typical AFM image of GO sheet. The height curve (inset) indicates that the thickness of GO sheet is about 0.8 nm, which is thicker than the theoretical thickness of graphene (0.34 nm), due to the epoxy, carboxyl, and hydroxyl [18] groups existing on the edges. At the same time, it also in- Fig. 3. (color online) TEM image of GO sheet. dicates that the graphite oxide is almost completely exfoliated into individual graphene oxide sheets. 3.2. Surface chemistry of GO sheet Figure2 shows the typical scanning electron microscopy Figure4 shows the X-ray diffraction (XRD) patterns of (SEM) image of the GO sheet. The homogeneous GO film pristine GO and reduced graphene sheets treated under dif- exhibits numerous mesoscopic corrugations and wrinkles on ferent conditions. The diffraction peaks of the pristine GO 028103-2 Chin. Phys. B Vol. 23, No. 2 (2014) 028103

◦ appear at around 2θ = 11.18 , corresponding to the (0 0 2) 600 D G reflection of GO film. The interlayer spacing calculated from 500 the (0 0 2) reflection is 0.79 nm, far larger than that of graphite 400 (0.334 nm). Indeed, the large expansion of d002 is caused by 300 the insertion of an oxygen-containing functional group and [21] H2O molecules. When GO was reduced by HI (RGOHI), 200 a 2D D+G Intensity/cps the (0 0 2) peak was found to shift toward larger diffraction an- 100 b c gles, corresponding to the interlayer distance decreasing from 0 d 0.79 nm to 0.369 nm, which is due to the removal of oxygen- 1000 1500 2000 2500 3000 containing functional groups. The (0 0 2) peaks of RGO1100 ◦C Raman shift/cm -1 ◦ ◦ and RGOHI+1100 ◦C shift to 26.16 and 26.34 , corresponding Fig. 5. (color online) Raman spectra of GO (curve a), RGOHI (curve to the interlayer distances of 0.340 nm and 0.338 nm respec- b), RGO1100 ◦C (curve c), RGOHI+1100 ◦C (curve d) sheets. tively. Based on the change of the interlayer spacing, it was X-ray photoelectron spectroscopy (XPS) analysis was obtained that the RGOHI+1100 ◦C has a minimum interlayer spacing, indicating that HI reduction combined with 1100 ◦C employed to investigate the elemental compositions of the GO thermal annealing is more effective than the direct 1100 ◦C sheet before and after the treatment for the understanding of thermal treatment to some extent. surface chemistries. Figure6 provides the C 1s XPS spec- tra of GO film before and after treatment. The components at

(a)

Pos. %area 284.8 57.65

sp 2 286.8 29.65 b C-O 287.3 12.70

c C/S

Intensity/arb. units Intensity/arb. d a C=O 0 10 20 30 40 50 60 70 2θ /( Ο) 280 284 288 292 Fig. 4. (color online) XRD spectra of the as-prepared GO (curve Binding energy/eV a), RGOHI (curve b), RGO1100 ◦C (curve c), RGOHI+1100 ◦C (curve d) sheets. (b) Raman spectra of GO and RGO are shown in Fig.5. The C=C Pos. %area G-band is Raman-active for sp2-hybridized carbon-based ma- 284.8 69.32 285.7 13.25 terial, while the D-band is activated only if defects partic- 286.8 9.48 C/S ipate in the double resonance Raman scattering near the K 287.3 7.95 point of the Brillouin zone.[22] Besides G and D bands, there −1 C=O are two Raman bands, called 2D and D+G at 2600 cm – C-C 3000 cm−1, which are often ignored due to their weak in- C-O [23] tensities compared with D and G bands. The 2D band is 280 284 288 292 Raman-active for crystalline graphitic materials and is sensi- Binding energy/eV tive to the π-band in the graphitic electronic structure, while (c) [23] the combination mode of D+G is induced by disorder. It Pos. %area is very easy to distinguish between the electronic conjuga- C=C 284.8 64.18 285.7 22.67 tions of GO and RGO by comparing these two bands. A 286.8 5.64 287.3 7.51

higher intensity ratio I /I indicates better electronic con- C/S 2D D+G jugation, and the values of intensity ratio I2D/ID+G of GO, RGOHI, RGO1100 ◦C, and RGOHI+1100 ◦C are 0.93, 1.35, 1.46, C-C C=O and 1.83, respectively. The increased intensity ratio indicated C-O that more graphitic electronic conjugations were recovered 280 284 288 292 for RGOHI+1100 ◦C, demonstrating that HI reduction combined Binding energy/eV with thermal annealing is more effective for the reduction than Fig. 6. (color online) High-resolution XPS C 1s spectra of GO (a), that by the thermal treatment only. RGO1100 ◦C (b), RGOHI+1100 ◦C (c) films. 028103-3 Chin. Phys. B Vol. 23, No. 2 (2014) 028103

284.8 eV, 285.7 eV, 286.8 eV, 287.6 eV are related to C=C, of continuous and overlapped graphene sheets by removing C–C, C–O, C=O, respectively.[6,24] A comparison of the C/O the oxygen-containing functional groups in GO films.[11] change of GO sheet between before and after the treatment is summarized in Table1. The C/O ratio increases with the re- 7000 (a) 1100 ΟC duction because of the removal of the oxygen-containing func- 6000 HI+1100 ΟC /sq) tional groups, and the much lower oxygen concentration in the W 5000 RGOHI+1100 ◦C film indicates the higher reduction degree of 4000 RGOHI+1100 ◦C, which is consistent with the Raman test. 3000

Table 1. C/O changes of GO film before and after treatment. 2000

1000

Element C/wt% O/wt% C/O resistance/( Sheet GO 70.68 26.68 2.65 55 60 65 70 75 80

RGO1100 ◦C 95.53 4.47 21.37 Transparency/% RGOHI+1100 ◦C 96.24 3.76 25.6 7000 (b) 1100 ΟC 6000 HI+1100 ΟC /sq)

3.3. Sheet resistance of the graphene TCFs W 5000 Figure7 shows the plots of sheet resistances of graphene 4000 films versus transparency and film thickness after different treatments. It is clearly seen that the sheet resistance gradu- 3000 ally increases as transparency increases, suggesting a positive 2000 relationship between the sheet resistance and optical trans- resistance/( Sheet 1000 parency. Obviously, the sheet resistance decreases with the 20 40 60 80 100 120 increasing of film thickness, which was attributed to the im- Film thickness/nm proved structure of GO films.[15,25] Meanwhile, it is clearly Fig. 7. (color online) Plots of sheet resistances versus transparency and film thickness of RGO1100 ◦C and RGOHI+1100 ◦C. indicated that the RGOHI+1100 ◦C TCFs have relatively low sheet resistance compared with RGO1100 ◦C TCFs at the same 8000 transmittance. Indeed, by calculating sheet resistance ver- HI+400 ΟC HI+700 ΟC sus transparency at 550-nm wavelength of our films, we find /sq) 7000 Ο W HI+1100 C 6000 that the 78.7-nm thick RGOHI+1100 ◦C TCF shows a sheet re- sistance of ∼ 2400 Ω/sq at a transmittance of 72%, while 5000 4000 RGO1100 ◦C TCF reveals a sheet resistance of 3600 Ω/sq at the same transmittance. The relatively good conductivity for 3000 2000 RGOHI+1100 ◦C TCF is mainly because of the higher reduc- Sheet resistance/( Sheet 1000 tion degree of RGOHI+1100 ◦C. This result has practical impor- 0 tance in the applicable TCFs which can be obtained by control- 70% 30% ling the thickness to balance two properties. Nevertheless, the Transparency/% sheet resistance of the RGOHI+1100 ◦C TCF is still high, owing Fig. 8. Comparison among electrical properties of GO films after dif- ferent reduction treatments. to the small size of as-prepared GO, which results in high in- tersheet contact resistance due to a large number of intersheet Figure9 is an optical image of a series of GO films fab- junctions.[26,27] ricated on quartz slides, where the leftmost sample is an unre- Figure8 shows three groups of films with different trans- duced GO film and the others are RGO reduced by differ- parencies, which include hydroiodic acid plus 400-◦C anneal- ent methods. There is an obvious transmission difference be- ◦ ing (RGOHI+400 ◦C), 700- C annealing (RGOHI+700 ◦C), and tween the unreduced and reduced films. The darkening films ◦ 1100- C graphitization (RGOHI+1100 ◦C), and the comparison of RGOHI (b) and RGOHI+1100 ◦C (c) suggest partial restora- among their sheet resistances. The figure clearly shows a tion of the π-electron system in GO film. It is noteworthy that trend in the electrical properties of films reduced by differ- the RGOHI+1100 ◦C TCF became light-colored because of the ent methods, with sheet resistance decreasing in the order of loss of material during the thermal treatment, which benefits RGOHI+400 ◦C, RGOHI+700 ◦C, RGOHI+1100 ◦C. The decreas- the transparency. What is more, it could be obtained that the ing of the graphene film sheet resistance results from the ef- GO film maintained its good integrity and uniformity in the fective recovering and subsequently more efficient annealing whole process. 028103-4 Chin. Phys. B Vol. 23, No. 2 (2014) 028103

(a) (b) (c) [2] Dikin D A, Stankovich S, Zimney E J, Piner R D, Dommett G H B, Evmenenko G, Nguyen S T and Ruoff R S 2007 Nature 448 457 [3] Stankovich S, Dikin D A, Piner R D, Kohlhaas K A, Kleinhammes, Jia Y Y, Wu Y, Nguyen S T and Ruoff R S 2007 Carbon 45 1558 [4] Wang D W, Li F, Zhao J P, Ren W C, Chen Z G, Tan J, Wu Z S, Gentle L, Lu G Q and Cheng H M 2009 ACS Nano 3 1745 [5] Becerril H A, Mao J, Liu Z F, Stoltenberg R M, Bao Z N and Chen Y Fig. 9. (color online) Optical images of the as-prepared GO (a), RGOHI S 2008 ACS Nano 2 463 (b), RGOHI+1100 ◦C (c) films. [6] Shin H J, Kim K K, Benayad A, Yoon S M, Park H K, Jung I S, Jin M H, Jeony H K, Kim J K, Choi J Y and Lee Y H 2009 Adv. Funct. Mater. 19 1987 3.4. Reducing theory [7] Cote L J, Kim F and Huang J X 2009 J. Am. Chem. Soc. 131 1043 [8] Mkhoyan K A, Contryman A W, Silcox J, Stewart D A, Eda G, Mattevi The nucleophilic substitution reaction mechanism of GO C, Miller S and Chhowalla M 2009 Nano Lett. 9 1058 film reduction by HI acid was presented by Pei et al.[13] as [9] Wang H L, Robinson J T, Li X L and Dai H J 2009 J. Am. Chem. Soc. follows: (i) the ring-opening reaction of an epoxy group and 131 9910 [10] Chen J Y, Zhang H L, Huang L P, Wu B, Wei D C and Liu Y Q 2009 (ii) the substitution reaction of a hydroxyl group by a halogen Physics 38 387 (in Chinese) atom. Owing to the relatively good selectivity of this reac- [11] Wang X, Zhi L J and Mullen K 2008 Nano Lett. 8 323 tion, the reducing process can maintain good integrity of the [12] Fan X B, Peng W C, Li Y, Li X Y, Wang S L, Zhang G L and Zhang F B 2008 Adv. Mater. 20 4490 graphene, and then it benefits the reduction of sheet resistance. [13] Pei S F, Zhao J P, Du J H, Ren W C and Cheng H M 2010 Carbon 48 In addition, 1100 ◦C is known as the graphitization tem- 4466 perature of carbon materials[5,15,28,29] and therefore cross- [14] Song L, Khoerunnisa F, Gao W, Dou W H, Hayashi T, Kaneko K, Endo M and Ajayan P M 2013 Carbon 52 608 [15] linking mechanisms would occur among the adjacent [15] Wang S J, Geng Y, Zheng Q B and Kim J K 2010 Carbon 48 1815 graphene sheets, which simultaneously restore the sp2 C–C [16] Zheng Q B, Ip W H, Lin X Y, Yousefi N, Yeung K K, Li Z G and Kim bonds as well as contribute to the improvement in electrical JK 2011 ACS Nano 5 6039 [17] Zhao J P, Pei S F, Ren W C, Gao L B and Cheng H M 2010 ACS Nano [30] performance. 4 5245 [18] Chen W F, Yan L F and Bangal P R 2010 Carbon 48 1146 [19] Tang L H, Feng H B, Cheng J S and Li J H 2010 Chem. Commun. 46 4. Conclusions 5882 A series of RGO TCFs is prepared by reducing the as- [20] Yu A P, Rose I, Davies A and Chen Z W 2010 Appl. Phys. Lett. 96 253105 prepared GO films through direct thermal annealing and HI [21] Zhao B, Liu P, Jiang Y, Pan D Y, Tao H H, Song J S, Fang T and Xu W reduction combined with 400 ◦C, 700 ◦C, 1100 ◦C thermal an- W 2012 J. Power Sources 198 423 [22] Pimenta M A, Dresselhaus G, Dresselhaus M S, Cancado L G, Jorio A nealings. Results show that RGO ◦ TCF has a higher HI+1100 C and Saito R 2007 Phys. Chem. Chem. Phys. 9 1276 electrical conductivity than the others at the same transmit- [23] Lee V, Whittaker L, Jayer C, Baroudi K M, Fischer D A and Banerjee S 2009 Chem. Mater. 21 3905 tance and that RGOHI+1100 ◦C TCF with a sheet resistance of [24] Ganguly A, Sharma S, Papakonstantinou P and Hamilton J 2011 J. ∼ 2400 Ω/sq at a transparency over 72% is obtained at a typ- Phys. Chem. C 115 17009 ical wavelength of 550 nm. However, the sheet resistance of [25] Wang X, Zhi L J, Tsao N, Tomovic Z, Li J L and Mullen K 2008 Angew. Chem. Int. Ed. 47 2990 the RGOHI+1100 ◦C TCF is still high because of the small size [26] Li X L, Zhang G Y, Bai X D, Sun X M, Wang X R, Wang E and Dai H of as-prepared GO film. Future work will mainly aim to opti- J 2008 Nat. Nanotechnol. 3 538 mize the process of preparing GO film for obtaining large-area [27] Yamaguchi H, Eda G, Mattevi C, Kim H and Chhowalla M 2010 ACS graphene oxide sheets or adopt the doping method to further Nano 4 524 [28] Kim U J, Liu X M, Furtado C A, Chen G, Saito R, Jiang J, Dresselhaus reduce the sheet resistance. M S and Eklund P C 2005 Phys. Rev. Lett. 95 157402 [29] Berger C, Song Z M, Li X B, Wu X S, Brown N, Naud C, Mayou D, Li T B, Hass J, Marchenkov A N, Conrad E H, First P N and Heer W References A 2006 Science 312 1191 [1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos [30] Zhi L J, Wu J S, Li J, Kolb U and Mullen K 2005 Angew. Chem. Int. S V, Grigorieva I V and Firsov A A 2004 Science 306 666 Ed. 44 2120

028103-5 Chinese Physics B

Volume 23 Number 2 February 2014

TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research

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ATOMIC AND MOLECULAR PHYSICS 023101 Theoretical study on KKK, LLL, and MMM X-ray transition energies and rates of neptunium and its ions Ismail Abdalla Saber, Dong Chen-Zhong, Wang Xiang-Li, Zhou Wei-Dong and Wu Zhong-Wen

023102 Na decorated B6 cluster and its hydrogen storage properties Ruan Wen, Wu Dong-Lan, Luo Wen-Lang, Yu Xiao-Guang and Xie An-Dong 023201 The Coulomb effect on a low-energy structure in above-threshold ionization spectra induced by mid- infrared laser pulses Lin Zhi-Yang, Wu Ming-Yan, Quan Wei, Liu Xiao-Jun, Chen Jing and Cheng Ya 023301 Accurate equilibrium inversion barrier of ammonia by extrapolation to the one-electron basis set limit Li Yong-Qing, Song Peng and Ma Feng-Cai 023302 High-pressure-activated carbon tetrachloride decomposition Chen Yuan-Zheng, Zhou Mi, Sun Mei-Jiao, Li Zuo-Wei and Sun Cheng-Lin 0 222 333 − 444 023401 Stereodynamics study of the H ( S) + NH(X Σ ) → N( S) + H222 reaction Wei Qiang 023402 Control of the photodetachment of H− near a metallic sphere surface by an elastic interface Li Shao-Sheng and Wang De-Hua

ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS 024101 Role of shape of hole in transmission and negative refractive index of sandwiched metamaterials Zhong Min and Ye Yong-Hong 024102 Effects of self-fields on gain in two-stream free electron laser with helical wiggler and an axial guiding magnetic field Saviz S, Lashani E and Ashkarran A 024103 Effect of normalized plasma frequency on electron phase-space orbits in a free-electron laser Ji Yu-Pin, Wang Shi-Jian, Xu Jing-Yue, Xu Yong-Gen, Liu Xiao-Xu, Lu Hong, Huang Xiao-Li and Zhang Shi-Chang 024104 Amplifying device created with isotropic dielectric layer Wang Shen-Yun and Liu Shao-Bin 024201 Design of a tunable frequency selective surface absorber as a loaded receiving antenna array Lin Bao-Qin, Zhao Shang-Hong, Wei Wei, Da Xin-Yu, Zheng Qiu-Rong, Zhang Heng-Yang and Zhu Meng 024202 Single photon transport properties in coupled cavity arrays nonlocally coupled to a two-level atom in the presence of dissipation Hai Lian, Tan Lei, Feng Jin-Shan, Xu Wen-Bin and Wang Bin

(Continued on the Bookbinding Inside Back Cover) 024203 Investigation on the intensity noise characteristics of the semiconductor ring laser Kang Ze-Xin, Cai Xin-Lun, Wen Xiao-Dong, Liu Chao, Jian Shui-Sheng and Yu Si-Yuan 024204 Effects of water and ice clouds on cloud microphysical budget: An equilibrium modeling study Gao Shou-Ting, Li Xiao-Fan and Zhou Yu-Shu 024205 Spectroscopic properties and mechanism of Tm3+/Er3+/Yb3+ co-doped oxyfluorogermanate glass ce-

ramics containing BaF2 nanocrystals Hu Yue-Bo, Qiu Jian-Bei, Zhou Da-Cheng, Song Zhi-Guo, Yang Zheng-Wen, Wang Rong-Fei, Jiao Qing and Zhou Da-Li 024206 Photon statistical properties of photon-added two-mode squeezed coherent states Xu Xue-Fen, Wang Shuai and Tang Bin 024207 Applications of quantum Fourier transform in photon-added coherent state Ren Gang, Du Jian-Ming and Yu Hai-Jun 024208 Maximal entanglement from photon-added nonlinear coherent states via unitary beam splitters K. Berrada 024209 A compact graphene Q-switched erbium-doped fiber laser using optical circulator and tunable fiber Bragg grating Li He-Ping, Xia Han-Ding, Wang Ze-Gao, Zhang Xiao-Xia, Chen Yuan-Fu, Zhang Shang-Jian, Tang Xiong- Gui and Liu Yong 024210 Evolution of modes in double-clad Raman fiber amplifier Wang Wen-Liang, Huang Liang-Jin, Leng Jin-Yong, Guo Shao-Feng and Jiang Zong-Fu 024211 Beam control in tri-core photonic lattices Ye Zhuo-Yi, Xia Shi-Qiang, Song Dao-Hong, Tang Li-Qin and Lou Ci-Bo 024212 Nonlinear optical properties of an azobenzene polymer Zeng Yi, Pan Zhi-Hua, Zhao Fu-Li, Qin Mu, Zhou Yan and Wang Chang-Shun 024501 On the modeling of synchronized flow in cellular automaton models Jin Cheng-Jie, Wang Wei and Jiang Rui 024701 Heat transfer for boundary layers with cross flow Krishnendu Bhattacharyya and Ioan Pop

PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES

025201 A thin radar-infrared stealth-compatible structure: Design, fabrication, and characterization Tian Hao, Liu Hai-Tao and Cheng Hai-Feng 025202 Parametric instabilities in single-walled carbon nanotubes He Cai-Xia, Jian Yue, Qi Xiu-Ying and Xue Ju-Kui 025203 Out-of-plane shear flow effects on fast magnetic reconnection in a two-dimensional hybrid simulation model Wang Lin, Wang Xian-Qu, Wang Xiao-Gang and Liu Yue 025204 Mechanical properties of Al/a-C nanocomposite thin films synthesized using a plasma focus device Z. A. Umar, R. S. Rawat, R. Ahmad, A. K. Kumar, Y. Wang, T. Hussain, Z. Chen, L. Shen and Z. Zhang

(Continued on the Bookbinding Inside Back Cover) 025205 The combined effect of optical laser and microwave radiations on a metal surface Anatoli P Gavrilyuk and Nikolai Ya Shaparev

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES

026101 Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor Chen Yong-Yue, Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang and Wu Hui-Zhen

026102 Dielectric and infrared properties of SrTiO3 single crystal doped by 3d (V, Mn, Fe, Ni) and 4f (Nd, Sm, Er) ions S. Maletic, D. Maletic, I. Petronijevic, J. Dojcilovic and D. M. Popovic 026103 New observations on hydrogen bonding in ice by density functional theory simulations Zhang Peng, Liu Yang, Yu Hui, Han Sheng-Hao, Lu¨ Ying-Bo, Lu¨ Mao-Shui and Cong Wei-Yan 026104 Effects of cold rolling deformation on microstructure, hardness, and creep behavior of high nitrogen austenitic stainless steel Sun Shi-Cheng, Sun Gui-Xun, Jiang Zhong-Hao, Ji Chang-Tao, Liu Jia-An and Lian Jian-She 026201 Elastic and thermodynamic properties of vanadium nitride under pressure and the effect of metallic bonding on its hardness Pu Chun-Ying, Zhou Da-Wei, Bao Dai-Xiao, Lu Cheng, Jin Xi-Lian, Su Tai-Chao and Zhang Fei-Wu

026301 First-principles study of the structural, elastic, and optical properties for Sr0.5Ca0.5TiO3 Yang Chun-Yan and Zhang Rong 026401 Phase transition of Bose–Einstein condensate under decoherence Zheng Qiang, Yi Shan-Feng and Hu Chang-Gang

026402 Subsolidus phase relation in the Bi2O3–Fe2O3–La2O3 system Hu Qi-Chang, Chen Ye-Qing, Lu¨ Pei-Wen, Huang Feng and Wang Xian 026601 Subcooled pool boiling heat transfer in fractal nanofluids: A novel analytical model Xiao Bo-Qi, Yang Yi and Xu Xiao-Fu 026701 Condensation of Fermions in the double-well potential Chen Xin-Wei, Liu Zhong-Qiang and Kong Xiang-Mu

026802 AA bilayer graphene on Si-terminated SiO2 under electric field Liu Hai-Long, Liu Yan, Wang Tao and Ao Zhi-Min

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTI- CAL PROPERTIES

027101 Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes Lu¨ Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Han Ting-Ting and Cai Shu-Jun

(Continued on the Bookbinding Inside Back Cover) 027102 Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes Lu¨ Yuan-Jie, Feng Zhi-Hong, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Han Ting-Ting, Song Xu-Bo, Cai Shu-Jun, Luan Chong-Biao and Lin Zhao-Jun 027103 Damage mechanism of hydroxyl radicals toward adenine–thymine base pair Tan Rong-Ri, Wang Dong-Qi and Zhang Feng-Shou 027201 The effect of kkk-cubic Dresselhaus spin orbit coupling on the decay time of persistent spin helix states in semiconductor two-dimensional electron gases Chai Zheng, Hu Mao-Jin, Wang Rui-Qiang and Hu Liang-Bin 027202 Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage Zhang Yu-Ping, Yin Yi-Heng, Lu¨ Huan-Huan and Zhang Hui-Yun

027301 AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell Qiu Hong-Bo, Li Hui-Qi, Liu Bang-Wu, Zhang Xiang and Shen Ze-Nan 027302 Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier Ma Xiao-Hua, Lu¨ Min, Pang Lei, Jiang Yuan-Qi, Yang Jing-Zhi, Chen Wei-Wei and Liu Xin-Yu 027304 Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface- emitting laser bypolarized electroluminescence Zhang Jie, Yu Jin-Ling, Cheng Shu-Ying, Lai Yun-Feng and Chen Yong-Hai

027305 A strategy of enhancing the photoactivity of TiO2 containing nonmetal and transition metal dopants Li Wei, Wei Shi-Hao and Duan Xiang-Mei 027501 Effect of magnetic properties of soft magnetic phase on the energy product of an exchange-spring magnet Jia Li-Ying, Yin Jin-Hua and Ma Xing-Qiao 027502 Ferrimagnetism and metal insulator transition in an organic polymer chain Ding Lin-Jie, Zhong Yuan and Fan Shuai-Wei 027601 High contrast atomic magnetometer based on coherent population trapping Yang Ai-Lin, Yang Guo-Qing, Xu Yun-Fei and Lin Qiang 027701 Resonance-mode effect on piezoelectric microcantilever performance in air, with a focus on the torsional modes Qiu Hua-Cheng, Dara Feili, Wu Xue-Zhong and Helmut Seidel

027702 Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO333 thin films Zhang Fei, Lin Yuan-Bin, Wu Hao, Miao Qing, Gong Ji-Jun, Chen Ji-Pei, Wu Su-Juan, Zeng Min, Gao Xing- Sen and Liu Jun-Ming 027703 Microscopic degradation mechanism of polyimide film caused by surface discharge under bipolar con- tinuous square impulse voltage Luo Yang, Wu Guang-Ning, Liu Ji-Wu, Peng Jia, Gao Guo-Qiang, Zhu Guang-Ya, Wang Peng and Cao Kai- Jiang

(Continued on the Bookbinding Inside Back Cover) 027801 Red-shift law of intense laser-induced electro-absorption in solids Deng Hong-Xiang, Zu Hao-Yue, Wu Shao-Yi, Sun Kai and Zu Xiao-Tao 027802 A generalized method of converting CT image to PET linear attenuation coefficient distribution in PET/CT imaging Wang Lu, Wu Li-Wei, Wei Le, Gao Juan, Sun Cui-Li, Chai Pei and Li Dao-Wu 027803 Optimization of InAs/GaAs quantum-dot structures and application to 1.3-µm mode-locked laser diodes Li Mi-Feng, Ni Hai-Qiao, Ding Ying, Bajek David, Kong Liang, Cataluna Maria Ana and Niu Zhi-Chuan 027804 Numerical demonstration of three-dimensional terahertz metamaterials based on the causality principle Saeid Jamilan, Javad Nourinia and Mohammad Naghi Azarmanesh

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

028101 Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre- treatment control Wang Hu, Xiong Hui, Wu Zhi-Hao, Yu Chen-Hui, Tian Yu, Dai Jiang-Nan, Fang Yan-Yan, Zhang Jian-Bao and Chen Chang-Qing 028102 Controlled construction of nanostructures in graphene Li Zhong-Jun, Li Qiang, Cheng Zeng-Guang, Li Hong-Bian and Fang Ying 028103 Transparent conductive graphene films prepared by hydroiodic acid and thermal reduction Qin Meng-Meng, Ji Wei, Feng Yi-Yu and Feng Wei

028201 Microstructure and its influence on CH4 adsorption behavior of deep coal Feng Yan-Yan, Jiang Cheng-Fa, Liu Dai-Jun and Chu Wei 028401 Study of a millimeter-wave squint indirect holographic algorithm suitable for imaging with large field- of-view Gao Xiang, Li Chao and Fang Guang-You 028501 Impact of multiplexed reading scheme on nanocrossbar memristor memory’s scalability Zhu Xuan, Tang Yu-Hua, Wu Chun-Qing, Wu Jun-Jie and Yi Xun 028502 Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer Yu Xiao-Peng, Fan Guang-Han, Ding Bin-Bin, Xiong Jian-Yong, Xiao Yao, Zhang Tao and Zheng Shu-Wen 028503 Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p i n avalanche photodiodes Li Xiao-Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Li Liang, Le Ling-Cong, Yang Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun and Yang Hui

028504 Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography Wu Kui, Wei Tong-Bo, Lan Ding, Zheng Hai-Yang, Wang Jun-Xi, Luo Yi and Li Jin-Min 3+ 3+ 028505 A novel strong green phosphor: K3Gd(PO4)2:Ce , Tb for a UV-excited white light-emitting-diode Jiang Ting-Ming, Yu Xue, Xu Xu-Hui, Zhou Da-Cheng, Yu Hong-Ling, Yang Peng-Hui and Qiu Jian-Bei

(Continued on the Bookbinding Inside Back Cover) 028701 Bifurcation diagram globally underpinning neuronal firing behaviors modified by SK conductance Chen Meng-Jiao, Ling Heng-Li, Liu Yi-Hui, Qu Shi-Xian and Ren Wei 028702 Application of radial basis functions to evolution equations arising in image segmentation Li Shu-Ling and Li Xiao-Lin 028703 Multi-objective optimization of gradient coil for benchtop magnetic resonance imaging system with high- resolution Wang Long-Qing and Wang Wei-Min 028801 Analysis of each branch current of serial solar cells by using an equivalent circuit model Yi Shi-Guang, Zhang Wan-Hui, Ai Bin, Song Jing-Wei and Shen Hui 028802 Hybrid solar cell based on polythiophene and GaN nanoparticles composite Feng Qian, Shi Peng, Li Yu-Kun, Du Kai, Wang Qiang, Feng Qing and Hao Yue 028803 Modified-DBR-based semi-omnidirectional multilayer anti-reflection coating for tandem solar cells Ali Bahrami, Shahram Mohammadnejad and Nima Jouyandeh Abkenar 028901 Generation of minimally persistent circle formation for a multi-agent system Luo Xiao-Yuan, Shao Shi-Kai, Zhang Yu-Yan, Li Shao-Bao, Guan Xin-Ping and Liu Zhi-Xin 028902 Optimal network structure to induce the maximal small-world effect Zhang Zheng-Zhen, Xu Wen-Jun, Zeng Shang-You and Lin Jia-Ru 028903 MDSLB: A new static load balancing method for parallel molecular dynamics simulations Wu Yun-Long, Xu Xin-Hai, Yang Xue-Jun, Zou Shun and Ren Xiao-Guang 028904 Analyzing the causation of a railway accident based on a complex network Ma Xin, Li Ke-Ping, Luo Zi-Yan and Zhou Jin

GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS

029201 Improvement of surface flux calculation: A study based on measurements over alpine meadow in the eastern Tibet Plateau in summer Li Sen and Zhong Zhong 029202 Vertical structure of predictability and information transport over the Northern Hemisphere Feng Ai-Xia, Wang Qi-Gang, Gong Zhi-Qiang and Feng Guo-Lin