An Atom-Probe Tomography Primer
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and quantitative data on the subnanoscale. APT both supplements and complements existing characterization instruments, such as high-resolution electron micro - An Atom-Probe scopy, scanning transmission electron microscopy, nano-secondary ion mass spectrometry, and electron energy loss Tomography spectroscopy. It is a destructive technique, as one is continuously irreversibly remov- ing atoms from a microtip specimen. The present revolutionary state of APT is Primer due to the confluence of several important technological advances over the past few decades: (1) the development of high- David N. Seidman and Krystyna Stiller, speed electronics that permit a researcher to collect large data sets (hundreds of mil- Guest Editors lions of atoms) in relatively short periods of time; (2) high pulse repetition-rate pico- and femtosecond lasers that permit one to Abstract analyze semiconductors, ceramics, biomin- Atom-probe tomography (APT) is in the midst of a dynamic renaissance as a result erals, and organic materials, in addition of the development of well-engineered commercial instruments that are both robust and to metals, without excessive specimen ergonomic and capable of collecting large data sets, hundreds of millions of atoms, in failures; (3) high-gain, 107, low-noise short time periods compared to their predecessor instruments. An APT setup involves multichannel plates (MCPs) that are used a field-ion microscope coupled directly to a special time-of-flight (TOF) mass to determine the time-of-flight (TOF) of spectrometer that permits one to determine the mass-to-charge states of individual individual ions; (4) delay-line detectors field-evaporated ions plus their x-, y-, and z-coordinates in a specimen in direct space that yield the x- and y-positions of individ- with subnanoscale resolution. The three-dimensional (3D) data sets acquired are ual atoms in an atomic plane; (5) the com- analyzed using increasingly sophisticated software programs that utilize high-end bination of a MCP and a delay-line detector workstations, which permit one to handle continuously increasing large data sets. in series to obtain a position-sensitive APT has the unique ability to dissect a lattice, with subnanometer-scale spatial detector, which yields the x-, y-, and z-coor- resolution, using either voltage or laser pulses, on an atom-by-atom and atomic plane- dinates of atoms in a 3D specimen in direct by-plane basis and to reconstruct it in 3D with the chemical identity of each detected space; (6) the implementation of dual- atom identified by TOF mass spectrometry. Employing pico- or femtosecond laser pulses beam focused ion beam (FIB) microscopy using visible (green or blue light) to ultraviolet light makes the analysis of metallic, for the preparation of a wide range of spec- semiconducting, ceramic, and organic materials practical to different degrees of success. imens, extending signi ficant APT to prob- 2 The utilization of dual-beam focused ion-beam microscopy for the preparation of microtip lems that could not previously be studied; specimens from multilayer and surface films, semiconductor devices, and for producing and (7) relatively high-end workstations that make it possible to analyze increas- site-specific specimens greatly extends the capabilities of APT to a wider range of ingly large data sets using sophisticated scientific and engineering problems than could previously be studied for a wide range of data analysis programs. materials: metals, semiconductors, ceramics, biominerals, and organic materials. The articles in this issue of MRS Bulletin are devoted to the applications of APT to specific problems concerning structural metallic and semiconducting materials, Introduction thin films and multilayers, and organic Nothing tends so much to the period,1 because of the availability of and biological materials and is intended to advancement of knowledge as the reliable and well-engineered commercial give the reader a feeling for the current application of a new instrument. The instruments and data analysis software state of this instrument, which is in flux, native intellectual powers of men in that are both robust and ergonomic. In this and embolden him or her to perform an different times are not so much the article, we first describe the basic physical experiment with this marvelous instru- causes of the different success of principles of APT commencing with the ment, which provides quantitative chemi- their labours, as the peculiar nature field ion microscope (FIM), invented by cal information in direct space that cannot of the means and artificial resources E.W. Müller, which provided the first be obtained with other characterization in their possession. (Sir Humphry images of atoms in direct space, 54 years tools at the subnanoscale. Davy, 1778–1829) ago, on the surfaces of crystalline tungsten specimens. After explaining the basic Field Ion Microscopy in Brief This profound observation is pertinent physics of field-ion microscopy, field ion- A FIM is a lensless point-projection to this issue of MRS Bulletin on atom-probe ization, and field evaporation, we discuss microscope that resolves individual atoms tomography (APT) and its many applica- the physical concepts of modern APTs, on the surface of a sharply pointed tip, tions to an ever-widening range of mate- which permit a researcher to reconstruct radius of curvature of <50 nm, which is rial classes that involve important the positions of individual atoms in a spec- maintained at a positive potential (Vdc) scientific and technological problems in imen in three dimensions (3D) with their with respect to ground. Atomic resolution materials science and engineering. APT is chemical identities (mass-to-charge state FIM images are achieved by cooling a coming of age, after a long gestation ratios, m/n), thereby yielding meaningful microtip to between ≈20 to 120 K in an MRS BULLETIN • VOLUME 34 • OCTOBER 2009 • www.mrs.org/bulletin 717 An Atom-Probe Tomography Primer ultrahigh vacuum (UHV) system using a men on an atom-by-atom and atomic {hkl} V(x) closed-cycle liquid helium refrigerator plane-by-plane basis, thereby exploring Metal Vacuum and placing the microtip at Vdc to generate continuously and systematically the bulk electric fields (E) that are between 15 to 65 of a specimen. Figure 1 is a schematic dia- V nm−1.3 High-purity helium or neon gram illustrating the mechanism by which ∑I − nφ gases, or a mixture of He and Ne gases, are the barrier for an atom to “evaporate” as i 0 used to image atoms utilizing the quan- an ion is strongly reduced by the applica- 0 x tum mechanical phenomenon of field ion- tion of an E field. The height of the so- 4–9 V (x) ization. In these high E fields, He or Ne called Schottky hump, Qn(E), is a sensitive a − atoms are field ionized, ≈45 V nm 1 for He function of E that decreases with increas- Λ ≈ −1 and 35 V nm for Ne, above individual ing E: Qn(E) appears in a Boltzmann factor, –ne E surface atoms. This is because the outer- and therefore field evaporation is also x most electron of every imaging gas atom strongly temperature dependent. This quantum mechanically tunnels into the model for field evaporation is called the sharply pointed tip at the site of an atom to ionic model, as it assumes that all the x Qn(E) s V x create an atomic diameter cone of He+ or atoms on the surface of a specimen exist as i( ) + Ne ions emanating from individual sur- ions. In Figure 1, Va(x) is the potential face atoms. The field-ionized He+ or Ne+ energy of an atom in the absence of an ions are repelled from the positively electric field, and V (x) is the potential Figure 1. V(x) is potential energy as a i function of distance away from the charged ions on the surface of a microtip energy of an ion in its ith ionization state surface of a specimen, x = 0. Va(x) is (specimen) and then accelerated along the in the presence of an electric field; they the potential energy of an atom in the E field lines, which are orthogonal to the differ from one another because of a small absence of an electric field, E, and Vi(x) equipotentials, to a MCP. The energetic difference in the polarizabilities of atoms is the potential energy of an ion in its He+ or Ne+ ions are converted into visible and ions, which is E dependent. i th ionization state in the presence of E. light employing a high-gain MCP. Thus, Ii is the i th ionization state of an ion, e the physical basis of “seeing” atoms in A Primer of Atom-Probe is the charge on an electron, n is the direct space is the quantum-mechanical Tomography number of electronic charges, Λ is the cohesive energy of a solid, φ is the process of field ionization of gas atoms A truly revolutionary advance in instru- 0 local work function, Q (E) is the height associated with the high E fields at indi- mentation occurred when Müller, Panitz, n of the so-called Schottky hump, and xs vidual ions on the surface of a microtip. and McLane invented the atom-probe is the position of the maximum value of + + The field ionized He or Ne ions are the field ion microscope (APFIM) in 1968,14 the Schottky hump. information carrying messengers that per- which consisted of a FIM plus a special mit observation of individual atoms with TOF mass spectrometer, with the ability to subnanometer scale spatial resolution. The detect single pulsed-field-evaporated ions magnification of a FIM image, which is using a high-gain MCP. An APFIM uti- spatial resolution is 0.2 to 0.5 nm within an easily >2 × 106 times, is proportional to the lizes controlled pulsed field evaporation, atomic {hkl} plane, where the exact value tip-to-MCP distance divided by the aver- using either voltage or laser pulses, to depends on {hkl}.