SOFFA, William Anthony, 1939- a FIELD-ION MICROSCOPY STUDY of SOME TUNGSTEN-RHENIUM and MOLYBDENUM- RHENIUM ALLOYS

Total Page:16

File Type:pdf, Size:1020Kb

SOFFA, William Anthony, 1939- a FIELD-ION MICROSCOPY STUDY of SOME TUNGSTEN-RHENIUM and MOLYBDENUM- RHENIUM ALLOYS This dissertation has been microfilmed exactly as received 67-10,926 SOFFA, William Anthony, 1939- A FIELD-ION MICROSCOPY STUDY OF SOME TUNGSTEN-RHENIUM AND MOLYBDENUM- RHENIUM ALLOYS. The Ohio State University, Ph.D., 1967 Engineering, metallurgy University Microfilms, Inc., Ann Arbor, Michigan All Rights Reserved A FIELD-ION MICROSCOPY STUDY OF SOME TUNGSTEN-RHENIUM AND MOLYBDENUM-RHENIUM ALLOYS DISSERTATION Presented in Partial Fulfillment of the Requirements for the Decree Doctor of Philosophy in the Graduate School of The Ohio State University By William Anthony Soffa, 13.S. , M.S. * # # # The Ohio State University 1967 Approved by / ..Adviser/] Department of Metallurgical Engineering To my Wife and Daughter ACKNOWLEDGMENTS The author is grateful for the continued encouragement and guidance of Professor K. L. Moazed during the course of this work. The author also gratefully acknowledges the many faceted contribution and inspiration of Professor J. P. Hirth throughout his undergraduate and graduate studies. ii VITA June 1, 1939 Born - Pittsburgh, Pennsylvania 1961 .... B.S., Carnegie Institute of Technology, Pittsburgh, Pennsylvania 1961-1963 . Graduate Assistant, Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, New York 1963 . M.S., Rensselaer Polytechnic Institute, Troy, New York 1963-1967 . Research Fellow, The Department of Metallurgical Engineering, The Ohio State University, Columbus, Ohio FIELDS OF STUDY Major Field: Physical Metallurgy Studies in Physical Metallurgy. Professors K. L. Moazed, Gordon W. Powell and J. W. Spretnak Studies in Mechanical Metallurgy. Professor J. W. Spretnak Studies in Dislocation Theory. Professor J. P. Hirth Studies in Thermodynamics and Kinetics. Professors R. A. Rapp and R. Speiser Studies in Corrosion and Oxidation. Professors M. G. Fontana and R. A. Rapp iii CONTENTS Page I. INTRODUCTION ........................... 1 Streak Contrast and Stacking Faults in B.C.C. Metals and Alloys .................... 1 Field-Ion Microscopy of Alloys ................ 3 Present W o r k .................................... 4 II. FIELD-ION MICROSCOPY ............................. 5 Historical Development ......................... 5 Basic Principle and Operation of the Field-Ion Microscope ......................... 7 Field Ionization and Image Formation ......... 10 Magnification and Resolution .................. 14 The Field S t r e s s ............................... 16 Field E v a p o r a t i o n ............................. 17 Theory of Field Evaporation .................. 19 The Structure of Field Evaporated Surfaces— Pure M e t a l s .................................. 2 3 The Field Evaporation Behavior of Alloys; Field Evaporation of Impurities ........... 24 III. EXPERIMENTAL...................................... 27 Microscopy: General Microscope Design, Operation and Vacuum Performance ........... 27 Microscope Screen Preparation ................ 29 Image Recording; Photographic Equipment and P r o c e d u r e ............................... 31 iv CONTENTS (Contd.) Page Liquid Hydrogen Cooling; Liquid Hydrogen Transfer Technique ............. 32 M a t e r i a l s ...................................... 33 Specimen Preparation ........................... 3^ IV. RESULTS AND DISCUSSION........................... 36 Streak Contrast in Tungsten-Rhenium Alloys . 36 Field-Ion Microscopy Study of Some Dilute Molybdenum-Rhenium Alloys; Anomalous Field Evaporation E f f e c t s .................. *J3 V. CONCLUSIONS ...................................... 50 APPENDIX .................................................... 112 BIBLIOGRAPHY .............................................. 115 v ILLUSTRATIONS Figure ' Page 1. Ionization of Helium Ions In the Field-Ion M i c r o s c o p e ...................................... 52 2. Effect of Applied Field on Electron Energy . 54 3. Field-Ion Image of a Tungsten T i p ................ 56 4. Atomic and Ionic Potential Curves . .............. 58 5. Potential Energy Curves ............................ 60 6. (a) Field-Ion M i c r o s c o p e ......................... 62 (b) Schematic Diagram of the Field-Ion M i c r o s c o p e .................................. 64 7. Schematic Diagram of the Vacuum System .......... 66 8. Schematic Diagram of Liquid Hydrogen Transfer Equipment........................................ 68 9. Tungsten: 77°K. 1 micron He .................... 70 10. Tungsten: 77°K. 1 micron H e ...................... 72 11. Tungsten: 77°K. 1 micron H e ...................... 74 12. Field-Ion Micrograph of W-3 Re Alloy Exhibiting Approximately <f230 Axis. 77°K. 1 micron H e ...................................... 76 13. Field-Ion Micrograph of W-3 Re Alloy Exhibiting Approximately <^231^ Axis. 77°K. 1 micron H e ...................................... 78 14. Cluster Maintained in (110) Net During Field Evaporation of Tungsten. 77°K. 1 micron He . 80 15. Streaking in Deformed W-3 Re Alloy. 77°K. 1 micron He . ......................... 82 16. Streaking in Deformed W-3 Re Alloy. vi ILLUSTRATIONS (Contd.) Figure Page 17. Streaking in Deformed W-3Re Alloy. 77°K. 1 micronH e .............................. 86 18. Streaking in Annealed W-3 Re Alloy. 77°K. 1 micronH e .............................. 88 19. Streaking in Annealed W-3 Re Alloy. 77°K. 1 micronH e .............................. 90 20. (a) Helium Field-Ion Image of Commercially Pure Molybdenum. 21°K. 1 micron He ................. 92 (b) Commercially Pure Molybdenum. 21°K. 1 micron H e ...................................... 94 21. Mo-. 5 Re Alloy. 21°K. 1 micron H e .............. 96 22. Mo-1 Re Alloy. 21°K. 1 micron H e .............. 98 23. Mo-1 Re Alloy. 21°K. 1 micron H e ................. 100 24. Mo-1 Re Alloy. 21°K. 1 micron H e ................. 102 25. Mo-1 Re Alloy. 21°K. 1 micron H e ................. 104 26. Mo-2 Re Alloy. 21°K. 1 micron H e ................. 106 vii TABLES Table Page 1. Field Evaporation of Ions at 0 ° K ................... 107 2. Calculated Evaporation Fields .................. 109 3. Energy to Field-Evaporate Non-Metallic Impurities......................................... Ill viii I. INTRODUCTION The field-ion microscope has a resolution of 2-3 X and is capable of magnifications exceeding one million diameters. Hence, despite some serious disadvantages, this microscope is potentially the most powerful tool available today for studying the structure of metals and alloys. However, in order to utilize the field-ion technique as a metallographic tool it is extremely important to establish precisely the relation between various contrast effects observed in field-ion micrographs and intrinsic metallurgical structure. One of the more important and more controversial of these effects is that of streak contrast. A. Streak Contrast and“Stacking Faults in B.C.C. Metals and Alloys Bright streaks are frequently observed in field-ion images of specimens which have been subjected to certain critical treatments. Ranganathan et al.1 have attempted to catalogue and explain the sources and origin of streak contrast effects. Streaking arising from image superposition and possibly stacking faults are discussed. The more general type of streaking, found in images from specimens with an elliptical cross section, which has eluded explanation is discussed in terms of likely causes such as dislocations, 2 2 slip bands, etc. Brandon, however, has suggested that the primary cause of streak contrast is tip asymmetry which may 3 result from faulty electropolishing. Ralph and Bowkett have disputed the general applicability of such an explanation but agree that the model may account for some specific streaks. Despite such attempts to explain streak contrast effects, considerable discussion continues and no general agreement as to their origin has yet been reached. Ralph and Brandon** encountered the first reproducible observations of image streaking in their study of the W-Re system. They reported that small streaks were found in deformed W-5 atomic percent Re alloys which they attributed to steps produced by stacking faults intersecting the crystal surface. These streaks were found to be always parallel to the line of intersection of \ 112 } planes with the surface and were only one atom in width. They showed that such a step could be produced by an % / l l l ^ partial dislocation on a plane. Preferential evaporation of atoms situated on the step was thought to be unlikely since the atoms essentially have the same coordination number and binding energy (though with a different disposition of neighbors) as the other atoms giving rise to image points. However, atoms on the step should give bright images because of field enhancement and focusing of field contours. 5 Ryan and Suiter have observed an apparently planar defect structure in tungsten, the so-called "cross-over structure." The (Oil) net planes are observed to be drawn Inwards locally. This fault was found to disappear during the removal of a hundred layers and then to reappear again in c; the same place. Ryan and SuiterJ interpret the cross-over structure in terms of an extended dislocation on the (111) plane. Stacking faults produce characteristic interference fringes in transmission electron micrographs. However, if the separation between partlals is of the order of 100 \ or less, identification becomes ambiguous. Thus, in the case of stacking faults of small widths and high energies in b.c.c. metals and alloys, the field-ion microscope has potentially an important role to play in the observation and study of these
Recommended publications
  • Helium Ion Microscopy
    Helium Ion Microscopy Gregor Hlawacek,1, a) Vasilisa Veligura,1 Raoul van Gastel,1 and Bene Poelsema1 Physics of Interfaces and Nanomaterials, MESA+ Research Institute, University of Twente, PO Box 217, 7500AE Enschede, The Netherlands (Dated: Tuesday 14th January, 2014) Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano–fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano–structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free–form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review. I. INTRODUCTION High resolution imaging, in particular in biology and materials science, is mostly done using Scanning Electron Microscopy (SEM). The ease of use and the widespread availability has made this the number one method for imaging in the aforementioned fields. Structuring and manipulation of nano–sized features is traditionally the domain of Focused Ion Beams. Here, mainly liquid metal ion sources (LMIS) using Gallium are used. However, 1 other techniques such as various types of GFIS, alloy Figure 1. (Color online) (a) Sketch of a GFIS. Ionization LMIS,2 magneto optical trap sources (MOTIS)3 and mul- 4 happens dominantly at the most protruding corner and edge ticusp plasma sources are runners–up.
    [Show full text]
  • Helium Ion Microscopy (HIM) for The
    OPEN Helium Ion Microscopy (HIM) for the SUBJECT AREAS: imaging of biological samples at IMAGING TECHNIQUES AND sub-nanometer resolution INSTRUMENTATION Matthew S. Joens1, Chuong Huynh2, James M. Kasuboski1, David Ferranti2, Yury J. Sigal1, Fabian Zeitvogel3, Martin Obst3, Claus J. Burkhardt4, Kevin P. Curran5, Sreekanth H. Chalasani5, Received Lewis A. Stern2, Bernhard Goetze2 & James A. J. Fitzpatrick1 2 October 2013 Accepted 1Waitt Advanced Biophotonics Center, Salk Institute for Biological Studies, 10010 North Torrey Pines Road, La Jolla, CA 92037, 26 November 2013 USA, 2Ion Microscopy Innovation Center, Carl Zeiss Microscopy LLC, One Corporation Way, Peabody, MA 01960, USA, 3Center 4 Published for Applied Geosciences, University Tu¨bingen, Hoelderlinstr. 12, 72074 Tuebingen, Germany, NMI Natural and Medical 5 17 December 2013 Sciences Institute, Markwiesenstr. 55, 72770 Reutlingen, Germany, Molecular Neurobiology Laboratory, Salk Institute for Biological Studies, 10010 North Torrey Pines Road, La Jolla, CA 92037, USA. Correspondence and Scanning Electron Microscopy (SEM) has long been the standard in imaging the sub-micrometer surface requests for materials ultrastructure of both hard and soft materials. In the case of biological samples, it has provided great insights should be addressed to into their physical architecture. However, three of the fundamental challenges in the SEM imaging of soft materials are that of limited imaging resolution at high magnification, charging caused by the insulating J.A.J.F. (fitzp@salk. properties of most biological samples and the loss of subtle surface features by heavy metal coating. These edu) challenges have recently been overcome with the development of the Helium Ion Microscope (HIM), which boasts advances in charge reduction, minimized sample damage, high surface contrast without the need for metal coating, increased depth of field, and 5 angstrom imaging resolution.
    [Show full text]
  • J. A. Panitz Is Emeritus Professor of Physics at the University of New Mexico (UNM)
    CURRICULUM VITAE John Andrew Panitz J. A. Panitz is Emeritus Professor of Physics at the University of New Mexico (UNM). He joined UNM in 1988 and during his tenure he was Professor of Physics, Professor of High Technology Materials and Professor of Cell Biology in the School of Medicine. At UNM he developed Visual E&M the first undergraduate laboratory courseware that encouraged critical thinking and role playing in the structured environment of cooperative learning groups. From 1970 to 1988 Professor Panitz was a member of the technical staff at Sandia National Laboratory in Albuquerque. At Sandia he invented and patented the LiFE detector an immunochemical sensor, the 10 cm Atom Probe and the Field Desorption Spectrometer that became the Imaging Atom Probe - the progenitor of commercial atom probes and Atom Probe Tomography. Visit the Atom Probe Museum In 1993 Professor Panitz founded High-Field Consultants to provide expertise and training in high-field phenomena and chemical analysis at the atomic level. Research Interests Molecular imaging in high electric fields. Binding of biological molecules at metal and semiconductor surfaces from aqueous solution using cryopreparation and cryofixation techniques. Field Ion Microscopy, Atom-Probe Tomography, field-ionization, field electron emission tunneling and field ionization of liquid metals. Education and Professional Experience 2004 Emeritus Professor of Physics. Department of Physics and Astronomy. The University of New Mexico. Albuquerque, NM 87131. 2001 - 2004 Professor of Physics. Department of Physics and Astronomy. Professor of High-Technology Materials, Center for HTC. Professor of Cell Biology and Physiology, School of Medicine. The University of New Mexico. Albuquerque, NM 87131.
    [Show full text]
  • Implementation of Atomically Defined Field Ion Microscopy Tips in Scanning Probe Microscopy
    Implementation of atomically defined Field Ion Microscopy tips in Scanning Probe Microscopy William Paul, Yoichi Miyahara, and Peter Grütter Department of Physics, Faculty of Science, McGill University, Montreal, Canada. E-mail: [email protected] Abstract The Field Ion Microscope (FIM) can be used to characterize the atomic configuration of the apex of sharp tips. These tips are well suited for Scanning Probe Microscopy (SPM) since they predetermine SPM resolution and electronic structure for spectroscopy. A protocol is proposed to preserve the atomic structure of the tip apex from etching due to gas impurities during the transfer period from FIM to SPM, and estimations are made regarding the time limitations of such an experiment due to contamination by ultra-high vacuum (UHV) rest gases. While avoiding any current setpoint overshoot to preserve the tip integrity, we present results from approaches of atomically defined tungsten tips to the tunneling regime with Au(111), HOPG, and Si(111) surfaces at room temperature. We conclude from these experiments that adatom mobility and physisorbed gas on the sample surface limit the choice of surfaces for which the tip integrity is preserved in tunneling experiments at room temperature. The atomic structure of FIM tip apices is unchanged only after tunneling to the highly reactive Si(111) surface. 1. Introduction experiments[7–11]. These, and other combined FIM/STM studies [12–15] shed light on some of the atom transfer The utility of the Field Ion Microscope (FIM) for processes in the tip-sample junction. A detailed study characterizing tips destined for Scanning Tunneling presenting a protocol for the preservation of tip apex structures Microscopy (STM) experiments was first considered by Fink in SPM experiments still does not exist.
    [Show full text]
  • Prelimary Studies by Field Ion Microscopy of Adhesion Pf Platinum
    https://ntrs.nasa.gov/search.jsp?R=19710028565 2020-03-23T15:56:44+00:00Z PRELIMINARY STUDIES BY FIELD ION MICROSCOPY OF ADHESION OF PLATINUM AND GOLD ' TO TUNGSTEN AND IRIDIUM 4 I by K7illium A. Bruinurd und Donuld H. Bnckley Lewis Reseurch Center I NATIONAL AERONAUTICS AND SPACE ADMINISTRATION WASHINGTON, D. C. OCTOBER 1971 i TECH LIBRARY KAFB, NM - 1. Report No. 2. Government Accession No. 3. Recipient's Catalog No. NASA TN D-6492 I 4. Title and Subtitle PRELIMINARY STUDIES BY FIELD ION MICROS- 5. Report Date COPY OF ADHESION OF PLATINUM AND GOLD TO October-- 1971 TUNGSTEN AND IRIDIUM 6. Performing Organization Code 7. Author(s) 8. Performing Organization Report No. William A. Brainard and Donald H. Buckley E-6383 ~~ 10. Work Unit No. 9. Performing Organization Name and Address 129-03 Lewis Research Center 11. Contract or Grant No. National Aeronautics and Space Administration Cleveland, Ohio 44135 13. Type of Report and Period Covered 2. Sponsoring Agency Name and Address Technical Note ~~ National Aeronautics and Space Administration 14. Sponsoring Agency Code Washington, D. C. 20546 5. Supplementary Notes 6. Abstract Adhesion experiments with platinum and gold contacting tungsten and iridium field-ion- microscope emitter tips were conducted in vacuum. Platinum contacting tungsten at 300 K showed an ordered surface believed to represent mechanical transfer of the platinum onto the tungsten in an ordered manner. Gold contacting tungsten at 78 K showed essentially a random transfer with some clustering of gold atoms. Gold transferred onto iridium by contacting at 78 K presented an ordered appearance due to decoration of ledge sites by the gold atoms.
    [Show full text]
  • Marc H. Richman, Inc
    Marc H. Richman, Inc. Consulting Engineers – Forensic Engineers – Metallurgists/Materials Engineers Specializing in Products Liability – Legal Evidence One Richmond Square Providence, RI 02906 Telephone: 401-751-9656 Facsimile: 401-751-9210 E-Mail: [email protected] Prof. MARC H. RICHMAN, Sc.D., P.E. Professional Biographical Sketch Date and Place of Birth: 14 October 1936 Boston, Massachusetts U.S.A. Citizenship: United States Education: ----- Boston Latin School, Sept. 1947 - June 1953 S.B. (Metallurgy), Massachusetts Institute of Technology, June 1957 Sc.D. (Metallurgy), Massachusetts Institute of Technology, February 1963 Experience: 1957 - 1981 Consulting Engineer in Private Practice 1981 - pres President, Marc H. Richman, Inc., Consulting Engineers, One Richmond Square, Providence, R.I. 02906 6/57 - 9/57 Engineer, Research & Development Laboratory, Shipbuilding Div., Bethlehem Steel Corp., Quincy, Mass. 9/57 - 6/60 Instructor in Metallurgy, Dept. of Metallurgy, Massachusetts Institute of Technology, Cambridge, Mass. 6/59 - 9/59 Guest Scientist, Laboratories for Research & Development, Franklin Institute, Philadelphia, Penn. 6/60 - 2/63 Research Assistant, Dept. of Metallurgy, Massa- chusetts Institute of Technology, Cambridge, Mass. Experience: (cont'd) 1/58 - 5/62 Instructor in Metallurgy, Div. of University Exten- sion, University of Massachusetts. 2/63 - 9/63 Active Duty, U.S. Army, Faculty, U.S. Army Ordnance Center & School, Aberdeen Proving Ground, Md. 9/63 - 6/67 Assistant Professor of Engineering, Brown University, Providence, R.I. 7/67 - 6/70 Associate Professor of Engineering, Brown University, Providence, R.I. (with tenure) 6/68 - 6/71 President, Educational Aids of Newton, Inc., Providence, R.I. 7/68 - 1/70 Consultant, U.S.
    [Show full text]
  • A Model to Predict Image Formation in the Three-Dimensional Field Ion Microscope
    A model to predict image formation in the three-dimensional field ion microscope Benjamin Klaes1, Rodrigue Larde1, Fabien Delaroche1, Stefan Parviainen1, Nicolas Rolland4, Shyam Katnagallu2, Baptiste Gault2,3, and François Vurpillot1,2 Corresponding Author: [email protected] 1. Normandie Université, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France. 2. Department of Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany 3. Department of Materials, Royal School of Mines, Imperial College London, Prince Consort Road, London, SW7 2BP, United Kingdom 4. Laboratory of Organic Electronics, Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden Abstract This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be achieved. 3DFIM is particularly suited to the direct observation of crystalline defects such as vacancies, interstitials, vacancy clusters, dislocations, and any combinations of theses defects that underpin the physical properties of materials. This makes 3DFIM extremely valuable for many material science and engineering applications, and further developing this technique is becoming crucial. The proposed model enables the simulation of imaging artefacts that are induced by non-regular field evaporation and by the impact of the perturbation of the electric field distribution of the distorted distribution of atoms close to defects.
    [Show full text]
  • Imaging Gas Adsorption in the Field Ion Microscope : Dependence in Tip Field Strength and Tip Temperature C
    IMAGING GAS ADSORPTION IN THE FIELD ION MICROSCOPE : DEPENDENCE IN TIP FIELD STRENGTH AND TIP TEMPERATURE C. de Castilho, D. Kingham To cite this version: C. de Castilho, D. Kingham. IMAGING GAS ADSORPTION IN THE FIELD ION MICROSCOPE : DEPENDENCE IN TIP FIELD STRENGTH AND TIP TEMPERATURE. Journal de Physique Colloques, 1988, 49 (C6), pp.C6-99-C6-104. 10.1051/jphyscol:1988617. jpa-00228114 HAL Id: jpa-00228114 https://hal.archives-ouvertes.fr/jpa-00228114 Submitted on 1 Jan 1988 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. JOURNAL DE PHYSIQUE Colloque C6, supplbment au n0ll, Tome 49, novembre 1988 IMAGING GAS ADSORPTION IN THE FIELD ION MICROSCOPE : DEPENDENCE IN TIP FIELD STRENGTH AND TIP TEMPERATURE C.M.C. de CASTILHO and D.R. KING-" Instituto de Fisica, UFBa. , Campus Universitario da ~edera~so, 40 210 Salvador, Bahia, Brazil 'VG Ionex Ltd., Charles Avenue, Maltings Park, GB-Burguess Hill RH15 9TQ, West Sussex, Great-Britain ~dsum&- Les conditions pour la formation dtune couche de gaz "imageant" adsorb; sur la surface dfun ;chantillon au Microscope Ignique de Champ sont recherchdes en utilisant un simple modGle thdorique pour le mouvement des moldcules du gaz.
    [Show full text]
  • An Atom-Probe Tomography Primer
    and quantitative data on the subnanoscale. APT both supplements and complements existing characterization instruments, such as high-resolution electron micro - An Atom-Probe scopy, scanning transmission electron microscopy, nano-secondary ion mass spectrometry, and electron energy loss Tomography spectroscopy. It is a destructive technique, as one is continuously irreversibly remov- ing atoms from a microtip specimen. The present revolutionary state of APT is Primer due to the confluence of several important technological advances over the past few decades: (1) the development of high- David N. Seidman and Krystyna Stiller, speed electronics that permit a researcher to collect large data sets (hundreds of mil- Guest Editors lions of atoms) in relatively short periods of time; (2) high pulse repetition-rate pico- and femtosecond lasers that permit one to Abstract analyze semiconductors, ceramics, biomin- Atom-probe tomography (APT) is in the midst of a dynamic renaissance as a result erals, and organic materials, in addition of the development of well-engineered commercial instruments that are both robust and to metals, without excessive specimen ergonomic and capable of collecting large data sets, hundreds of millions of atoms, in failures; (3) high-gain, 107, low-noise short time periods compared to their predecessor instruments. An APT setup involves multichannel plates (MCPs) that are used a field-ion microscope coupled directly to a special time-of-flight (TOF) mass to determine the time-of-flight (TOF) of spectrometer that permits one to determine the mass-to-charge states of individual individual ions; (4) delay-line detectors field-evaporated ions plus their x-, y-, and z-coordinates in a specimen in direct space that yield the x- and y-positions of individ- with subnanoscale resolution.
    [Show full text]
  • Three-Dimensional Atomically-Resolved Analytical Imaging with a Field Ion Microscope Shyam Katnagallua, Felipe F
    Three-dimensional atomically-resolved analytical imaging with a field ion microscope Shyam Katnagallua, Felipe F. Morgadoa, Isabelle Moutona,$, Baptiste Gaulta,b, Leigh T. Stephensona,* aDepartment of Metal physics and alloy design, Max Planck Institut für Eisenforschung GmbH, Düsseldorf 40237, Germany bDepartment of Materials, Royal School of Mines, Imperial College London, London, SW7 2AZ, UK $ now at CEA Saclay Des/-Service de Recherches de Métallurgie Appliquée, Gif-sur-Yvette, France. Abstract Atom probe tomography (APT) helps elucidate the link between the nanoscale chemical variations and physical properties, but it has limited structural resolution. Field ion microscopy (FIM), a predecessor technique to APT, is capable of attaining atomic resolution along certain sets of crystallographic planes albeit at the expense of elemental identification. We demonstrate how two commercially-available atom probe instruments, one with a straight flight path and one fitted with a reflectron-lens, can be used to acquire time-of-flight mass spectrometry data concomitant with a FIM experiment. We outline various experimental protocols making use of temporal and spatial correlations to best discriminate field evaporated signals from the large field ionised background signal, demonstrating an unsophisticated yet efficient data mining strategy to provide this discrimination. We discuss the remaining experimental challenges that need be addressed, notably concerned with accurate detection and identification of individual field evaporated ions contained within the high field ionised flux that contributes to a FIM image. Our hybrid experimental approach can, in principle, exhibit true atomic resolution with elemental discrimination capabilities, neither of which atom probe nor field ion microscopy can individually fully deliver – thereby making this new approach, here broadly termed analytical field ion microscope (aFIM), unique.
    [Show full text]
  • An Introduction to the Helium Ion Microscope
    Downloaded from An Introduction to the Helium Ion consisting of noble gas ions is preferred to minimize any chemical, Microscope electrical, or optical alteration of the sample. If helium is used as the noble gas, there is the additional benefit of minimal sputtering John Morgan, John Notte, Raymond Hill, Bill Ward of the substrate. ALIS Corporation, Peabody, MA ALIS Corporation has developed a high brightness, monochro- https://www.cambridge.org/core [email protected] matic source of noble gas ions, which is well-suited to high resolu- Introduction tion microscopy. The ion source developed at ALIS Corporation In order to get high resolution images from any scanning beam is best understood by comparison with a related technology, the microscope one must be able to produce a sufficiently small probe, Field Ion Microscope (FIM). have a small interaction volume in the substrate and have an abun- dance of information-rich particles to collect to create the image. A typical scanning electron microscope is able to meet all of these . IP address: requirements to some degree. However, a helium ion microscope based on a Gas Field Ion Source (GFIS) has significant advantages over the SEM in all three categories. 170.106.35.93 The ultimate probe size in a SEM is limited by diffraction and chromatic aberration. Due to the very high source brightness and the shorter wavelength of the helium ions, it is possible to focus the , on ion beam to a smaller probe size relative to the SEM. 01 Oct 2021 at 11:52:00 An electron beam has a relatively large excitation volume in the substrate.
    [Show full text]
  • Helium Ion Microscope – Secondary Ion Mass Spectrometry for Geological Materials
    Helium ion microscope – secondary ion mass spectrometry for geological materials Matthew R. Ball*1, Richard J. M. Taylor2, Joshua F. Einsle3, Fouzia Khanom4, Christelle Guillermier4 and Richard J. Harrison1 Full Research Paper Open Access Address: Beilstein J. Nanotechnol. 2020, 11, 1504–1515. 1Department of Earth Sciences, University of Cambridge, UK, 2Carl https://doi.org/10.3762/bjnano.11.133 Zeiss Microscopy Ltd, Cambourne, Cambridgeshire, UK, 3School of Geographical and Earth Sciences, University of Glasgow, UK and Received: 29 June 2020 4Carl Zeiss SMT Inc., Peabody, MA, USA Accepted: 09 September 2020 Published: 02 October 2020 Email: Matthew R. Ball* - [email protected] This article is part of the thematic issue "Ten years of the helium ion microscope". * Corresponding author Guest Editors: G. Hlawacek and A. Wolff Keywords: geoscience; helium ion microscopy (HIM); lithium; secondary ion © 2020 Ball et al.; licensee Beilstein-Institut. mass spectrometry (SIMS) License and terms: see end of document. Abstract The helium ion microscope (HIM) is a focussed ion beam instrument with unprecedented spatial resolution for secondary electron imaging but has traditionally lacked microanalytical capabilities. With the addition of the secondary ion mass spectrometry (SIMS) attachment, the capabilities of the instrument have expanded to microanalysis of isotopes from Li up to hundreds of atomic mass units, effectively opening up the analysis of all natural and geological systems. However, the instrument has thus far been under- utilised by the geosciences community, due in no small part to a lack of a thorough understanding of the quantitative capabilities of the instrument. Li represents an ideal element for an exploration of the instrument as a tool for geological samples, due to its impor- tance for economic geology and a green economy, and the difficult nature of observing Li with traditional microanalytical tech- niques.
    [Show full text]