MITSUBISHI SEMICONDUCTOR M63834FP/KP PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 8-UNIT 500mA DARLINGTON -ARRAY

DESCRIPTION PIN CONFIGURATION The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN connected to from eight high current NC 1 20 NC gain driver pairs. IN1 2 19 O1

IN2 3 18 O2

FEATURES IN3 4 17 O3 High breakdown voltage (BVCEO ≥ 50V) IN4 5 16 O4 INPUT OUTPUT High-current driving (IC(max) = 500mA) IN5 6 15 O5 3V micro computer compatible input IN6 7 14 O6 “L” active level input IN7 8 13 O7 With input IN8 9 12 O8 Wide operating temperature range (Ta = –40 to +85°C) GND 10 11 VCC

20P2N-A(FP) NC : No connection APPLICATION Package type 20P2E-A(KP) Output for 3 voltage microcomputer series and interface with high voltage system. and small printer driver, LED, or incandescent display digit driver. CIRCUIT DIAGRAM

FUNCTION VCC The M63834GP/KP is transistor-array of high active level 20K eight units type which can do direct drive of 3 voltage micro- INPUT OUTPUT 3.5K computer series. A of 3.5kΩ is connected between 1.05K the input and the base of PNP transistors. The input diode is 7.2K 3K intended to prevent the flow of current from the input to the GND Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case The eight circuits share the Vcc and GND where one of the inputs of the 8 circuit is “H” and the other The diode, indicated with the dotted line, is parasitic, and are “L” to save power consumption. The diode is inserted to cannot be used. Unit : Ω prevent such mis-operation. The outputs are capable of driv- ing 500mA and are rated for operation with output voltage up to 50V.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol Parameter ConditionsRatings Unit VCC Supply voltage 7 V VCEO Collector-emitter voltage Output, H –0.5 ~ +50 V IC Collector current Current per circuit output, L 500 mA VI Input voltage –0.5 ~ VCC V Pd Power dissipation Ta = 25°C, when mounted on board 1.10(FP)/0.68(KP) W Topr Operating temperature –40 ~ +85 °C Tstg Storage temperature –55 ~ +125 °C

Sep. 2001 MITSUBISHI SEMICONDUCTOR M63834FP/KP PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Symbol Parameter Unit min typ max VCC Supply voltage 2.7 3.0 3.6 V Duty Cycle FP : no more than 4% 0 — 400 Collector current (Current per KP : no more than 2% IC 1 circuit when 8 circuits are mA coming on simultaneously) Duty Cycle FP : no more than 15% 0 — 200 KP : no more than 6% VIH “H” input voltage VCC-0.5 — VCC V VIL “L” input voltage 0 — VCC-2.2 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Symbol Parameter Test conditions Unit min typ✽ max V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA 50 — — V VCC = 2.7V, VI = 0.5V, IC = 400mA — 1.15 2.4 VCE(sat) Collector-emitter saturation voltage V VCC = 2.7V, VI = 0.5V, IC = 200mA — 0.93 1.6 II Input current VI = VCC-2.2V — –220 –600 µA ICC Supply current (AN only Input) VCC = 3.6V, VI = 0.5V — 2.6 4.0 mA hFE DC amplification factor VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C 2000 10000 — — ✽ : Typical values are at Ta = 25°C

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Limits Symbol Parameter Test conditions Unit min typ max ton Turn-on time — 120 — ns CL = 15pF (note 1) toff Turn-off time — 4500 — ns

NOTE 1 TEST CIRCUIT TIMING DIAGRAM

INPUT VCC VO INPUT Measured 50% 50% device RL

PG OUTPUT

OUTPUT 50Ω CL 50% 50%

ton toff

(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes

Sep. 2001 MITSUBISHI SEMICONDUCTOR M63834FP/KP PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

TYPICAL CHARACTERISTICS

Output Saturation Voltage Thermal Derating Factor Characteristics Collector Current Characteristics 2.0 500 Vcc=2.7V VI=0.5V 400 1.5

M63834FP 300 1.10 1.0

M63834KP 200 0.68 0.572 0.5 Ta=25°C 0.354 Collector current Ic (mA) 100 Ta=85°C Ta=–20°C Power dissipation Pd(max) (W)

0 0 0 25 50 75 85 100 0 0.5 1.0 1.5 2.0

Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics (M63834FP) (M63834FP) 500 500

1 400 400

300 300 2 1

3 200 200 4 2 •The collector •The collector current values represent 5 3 6 current values the current per circuit. 7 represent the 4 Collector current Ic (mA) Collector current Ic (mA) 100 •Repeated frequency ≥ 10Hz 8 100 5 current per circuit. 6 •The value the circle represents the ≥ 7 •Repeated frequency 10Hz 8 value of the simultaneously-operated circuit. •The value the circle represents the value of the •Vcc = 3V •Ta = 25°C simultaneously-operated circuit. •Vcc = 3V •Ta = 85°C 0 0 0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics (M63834KP) (M63834KP) 500 500 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents 400 400 the value of the simultaneously-operated circuit. •Vcc = 3V 1 •Ta = 85°C 300 300

1 200 2 200 •The collector 3 current values 4 2 represent the 5 3 Collector current Ic (mA) 100 6 Collector current Ic (mA) 100 current per circuit. 7 4 •Repeated frequency ≥ 10Hz 8 5 6 •The value the circle represents the value of the 7 simultaneously-operated circuit. •Vcc = 3V •Ta = 25°C 8 0 0 0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Sep. 2001 MITSUBISHI SEMICONDUCTOR M63834FP/KP PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

DC Amplification Factor Collector Current Characteristics Output Current Characteristics 105 500 7 VCE=2V VCE=2V 5 3 FE ° 400 2 Ta=85 C Ta=85°C

4 (mA) 10 C 7 300 5 Ta=25°C 3 2 Ta=–40°C 200 ° 103 Ta=–40 C 7 Ta=25°C 5

Collector current I 100 DC amplification factor h DC amplification factor 3 2 102 0 10 1 2573 10 2 2573 10 3 0 0.4 0.8 1.21.6 2.0

Collector current IC (mA) Input voltage Vcc-VI (V)

Input Characteristics Driver Supply Characteristics –0.6 20.0 VI=0.5V VCC=3V –0.5 16.0

–0.4 (mA) I 12.0 Ta=25°C –0.3 ° ° Ta=–40 C Ta=85 C 8.0 –0.2

Input Current I Ta=25°C Supply Current Icc (mA) 4.0 –0.1 Ta=85°C Ta=–40°C 0 0 0123 0246810

Input voltage Vcc-VI (V) Supply voltage Vcc (V)

Sep. 2001