Evaluation Board Manual

3W Candle Lighting AC 220V

MB39C601 --EVB --CN01

Rev 1.0 Mar. 2013 1. Summarize

The driver MB39C601-EVB-CN01 has the driving capability of 3 watts. It can be placed in LED candle light or other similar model 2. EVB Electrical Performance Specifications Ta = +25 ℃ , fac = 50Hz

PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Input Characteristics

Input Voltage Range 198 220 242 VAC Maximum Input Current Vin=220Vac ,50Hz,Pout=3W 20 mA

Output Characteristics load:6s1p

Output Voltage Output Current=170mA 18 V

Output Current 170 mA

Output Current Ripple Co=330uF 70 mA PP

Systems Characteristics

Switching frequency 80 KHz

Efficiency Vin=220Vac ,50H 75 %

Power Factor Vin=198Vac~242Vac,Pout=3W 0.93

PCB Size L*W*H 26*18.5*15 mm

Dimming Mode - Triac/No-triac -

Protection function OTP, OVP, 3.Terminal Description

Pin Name Description L AC line input N AC line input LED+ LED output (+) LED- LED output (-)

1 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 4. Test Setup

(Note) This evaluation board is a high voltage. Should be handled carefully. During operation, do not touch the evaluation board.

(1) Recommended Test Setup ・Connect L and N to AC power. ・Please connect the measuring instrument and LED. (LED: 6LED series connected, VF = 3V, IF = 170mA)

AC Power Supply

VAC :220Vrms

DMM VOUT + -

DMM IOUT + -

(2) How to check • Make sure that the terminals are connected correctly, and then turn on the AC POWER.

• LED light ,and the same time V OUT = 23V, I OUT = 300mA .The EVB working properly.

2 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. PCB layout MB39C601MB39C601----EVBEVBEVB----CN01CN01

Top view(top side) Top view (bottom side)

Board Layout (top side) Board Layout (bottom side )))

3 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 6. Schematic

4 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 7. BOM List

COMPON NO DESCRIPTION PART No. MFR ENT 1 U1 LED driver IC, SOP-8 MB39C601 Fujitsu 2 R6 Chip , 5.1R Ω, ±5%,1/10W, 0603 RC0603JR-075R1L YAGEO

3 R11 Chip resistor, 33K Ω, ±1%,1/10W, 0603 RC0603FR-0733KL YAGEO

4 R13 Chip resistor, 43K Ω, ±1%,1/10W, 0603 RC0603FR-0743KL YAGEO

5 R3 Chip resistor, 110K Ω, ±1%,1/10W, 0603 RC0603FR-07110KL YAGEO

6 R4 Chip resistor, 200K Ω, ±5%,1/10W, 0603 RC0603JR-07200KL YAGEO

7 R12 Chip resistor, 360K Ω, ±1%,1/10W, 0603 RC0603FR-07360KL YAGEO

8 R7 Chip resistor, 3R Ω, ±5%,,1/8W, 0805 RC0805JR-073RL YAGEO

9 R5 Chip resistor, 75K Ω, ±5%,1/8W, 0805 RC0805JR-0775KL YAGEO

10 R1 Chip resistor, 1M Ω, ±5%,1/8W, 0805 RC0805JR-071ML YAGEO

11 R8 Chip resistor, 150K Ω, ±5%,1/4W, 1206 RC1206JR-07150KL YAGEO Aluminum electrolytic ,25V 330uF 105 ℃ 12 C1 STD CHONG 8*12 Aluminum electrolytic capacitor,50V 10uF 105 ℃ 13 C2 STD CHENGX 4*12 14 C9,C3,C8 Ceramic capacitor 50v 10nF, X7R, 0602 GRM188R71H103KA01D MuRata

15 C6 Ceramic capacitor 630v 470pF, X7R, 1206 GCM31A7U2J471JX01D MuRata

16 C4 Film polypropylone capacitor 4.7nF 630V CBB STD STD 17 D1 Schottky 100V 1A,SMA SS110 MCC 18 D2 Ultra fast200mA 175V,SOT-23 MMBD1404 Fairchild 19 D3 Glass 500mW, 18V, LL34 STD STD 20 D4 Ultra fast 800V 1A ,SMA STTH108A ST

21 BR1 Bridge ,0.5A,600V,SO-4 MB6S Fairchild

22 Q1 N-,800V,3.8ohm,2.5A,IPAK STD3NK80 ST Lp=1mH, Np: Ns: 23 T1 STD BZD Na=160T:27T:21T

5 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 8. Transformer Specification

1, Magnetic core:EPC13 ,PC40 ,Bobbin 5pins+5 pins ,horizontal type ; 2, Primary windings inductance :Lp=1mH (100 KHz) ,Air gap in the column and inductance value is1mH ±10%,Leakinginductance as small as possible. 3, Sandwich winding, dipping, cut short 2pin, pull out or cut short 4pin 、5pin 、8pin

winding instruction Winding Turns Wire Insulation Name Diameter start pin →end pin properties tape (((mm ))) Ordinary 0.12 (Inner Np-1 (primary ) 1→2 75 enameled 3layers diameter ) wire Ordinary 0.28 (Inner Ns (secondary ) 27 enameled 3 layers diameter ) 10 →9 wire Ordinary 0.12 (Inner Na (auxiliary ) 7→6 21 enameled 3 layers diameter ) wire Ordinary 0.12 (Inner Np-2 (primary ) 2 →3 75 enameled 3 layers diameter ) wire

6/ 15 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9. Property data 99--11 Efficiency 99--22 Power Factor

1 1

0.9 0.95 η 0.8 0.9

0.7 0.85

0.6 0.8

0.5 0.75

0.4 0.7

0.3 0.65 Power Factor PF Factor Power 0.2 0.6

Conversion efficiency efficiency Conversion 0.1 0.55

0 0.5 190 200 210 220 230 240 190 200 210 220 230 240 Input Voltage 50Hz Vac [V] Input Voltage 50Hz Vac [V]

LLoadoad ::6LEDs in series LLoadoad ::6LEDs in series

99--33 Line regulation

200 180 160 140 120 100 80 60 40 20

Output Current ILED [mA] ILED Current Output 0 190 200 210 220 230 240 Input Voltage 50Hz Vac [V] LLoadoad ::6LEDs in series

6 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC =220V, 50Hz. LED =6 pcs in series 99--55 Output Ripple 99--66 Switching Waveform

V (Q1 drain) VBULK SW

VOUT

IOUT IOUT

99--77 TurnTurn--OnOn Waveform 99--88 Turn--OffTurn Off Waveform

VBULK VBULK

VDD VDD

VOUT VOUT

IOUT IOUT

99--99 LED Open Waveform

VSW (Q1 drain)

VDD

VOUT

IOUT

Do not Open too long Do not short too long

7 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 10. Evaluation board picture

Top View Bottom View

9 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 11. Revision History

Name Version Remark

MB39C601-EVB-CN01 Rev 1.0

Specifications are subject to change without notice. For further information please contact each office.

All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU ; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

10 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED