Aln) Coatings Through Suspension Plasma Spray (SPS) Technology

Total Page:16

File Type:pdf, Size:1020Kb

Aln) Coatings Through Suspension Plasma Spray (SPS) Technology coatings Article Synthesis of Cubic Aluminum Nitride (AlN) Coatings through Suspension Plasma Spray (SPS) Technology Faranak Barandehfard, James Aluha and François Gitzhofer * Department of Chemical & Biotechnological Engineering, Université de Sherbrooke, Sherbrooke, QC J1K 2R1, Canada; [email protected] (F.B.); [email protected] (J.A.) * Correspondence: [email protected]; Tel.: +1-819-578-7937 Abstract: Thermal spraying of aluminum nitride (AlN) is a challenging issue because it decomposes at a high temperature. In this work, the use of suspension plasma spray (SPS) technology is proposed for the in situ synthesis and deposition of cubic-structured AlN coatings on metallic substrates. The effects of the nitriding agent, the suspension liquid carrier, the substrate materials and the standoff distance during deposition by SPS were investigated. The plasma-synthesized coatings were analyzed by X-ray diffraction (XRD), optical microscopy (OM) and scanning electron microscopy (SEM). The results show higher AlN content in the coatings deposited on a carbon steel substrate (~82%) when compared to titanium substrate (~30%) or molybdenum (~15%). Melamine mixed with pure aluminum powder produced AlN-richer coatings of up to 82% when compared to urea mixed with the Al (~25% AlN). Hexadecane was a relatively better liquid carrier than the oxygen-rich liquid carriers such as ethanol or ethylene glycol. When the materials were exposed to a molten ◦ aluminum–magnesium alloy at 850 C for 2 h, the corrosion resistance of the AlN-coated carbon steel substrate showed improved performance in comparison to the uncoated substrate. Citation: Barandehfard, F.; Aluha, J.; Gitzhofer, F. Synthesis of Cubic Keywords: cubic aluminum nitride; suspension plasma spray (SPS); coatings; melamine; urea Aluminum Nitride (AlN) Coatings through Suspension Plasma Spray (SPS) Technology. Coatings 2021, 11, 500. https://doi.org/10.3390/ 1. Introduction coatings11050500 1.1. Background Aluminum nitride (AlN) is a promising material that can find diverse applications Academic Editor: Robert B. Heimann in the aluminum industry [1], for example, in crucibles for handling corrosive chemicals Received: 11 March 2021 and reaction vessels [2]. In addition, AlN has become the key component of semiconductor Accepted: 15 April 2021 equipment, which is appropriate in piezoelectric and electronic applications [3]. Some Published: 23 April 2021 of these amazing properties of AlN are summarized in Table1, as high thermal conduc- tivity [4], low thermal expansion coefficient [5], and a large band gap, which is a major Publisher’s Note: MDPI stays neutral factor that determines a solid’s electrical conductivity [6], and this makes AlN an electrical with regard to jurisdictional claims in insulator. Other characteristics include AlN’s chemical and physical stability at fairly high published maps and institutional affil- temperature regions, high hardness [7], and high resistance to molten metals, wear and iations. corrosion [5]. Table 1. Selected AlN properties. Properties Values Copyright: © 2021 by the authors. Thermal expansion coefficient α = 4.3 × 10−6 K−1 Licensee MDPI, Basel, Switzerland. Thermal conductivity k = 319 W·m−1·K−1 This article is an open access article Crystalline structure Hexagonal or cubic distributed under the terms and Hardness 1400 Hv conditions of the Creative Commons Electrical resistivity 1013 W·cm Attribution (CC BY) license (https:// Band gap 6.2 eV creativecommons.org/licenses/by/ 4.0/). Coatings 2021, 11, 500. https://doi.org/10.3390/coatings11050500 https://www.mdpi.com/journal/coatings Coatings 2021, 11, 500 2 of 21 AlN exists in several crystal structures with different properties: hexagonal (wurtzite) crystal structure and two types of cubic structures (rock salt and zinc-blende). The cubic AlN is a metastable phase at ambient conditions, which renders its synthesis a difficult process [8]. In comparison to the hexagonal crystal structure, the rock salt cubic AlN by having a higher symmetry in its crystal structure shows greater thermal conductivity (250–600 W·m−1·K−1), electrical resistivity (1016 W·cm) and hardness (4079–5098 Hv) [9]. 1.2. Synthesis Methods of AlN Some of the conventional synthesis methods of AlN powder involve the carbothermal reduction–nitridation of alumina [10], direct nitridation of Al powder [11], non-transferred arc plasma method [12], chemical routes [13], microwave-assisted urea route [14], pulsed laser ablation [15] and transferred type arc plasma [16]. Tables2 and3 summarize the different methods of producing AlN coatings and powder, respectively. Table 2. Summary of different methods used in producing AlN coatings. Method Precursors Coating Substrate Reference RF plasma spray Al powder + N2 stainless steel, quartz plate [17] DC plasma spray Al powder + NH4Cl mild steel (SS400) [18] Atmospheric plasma spraying (APS) Al powder + N2 + H2 soft steel (SS400) [8] Magnetron sputtering Al-disc + Ar + N2 stainless steel (SS) 304L [19] LT reactive magnetron sputtering Al powder + Ar + N2 crystal Si, amorphous SiN [20] Reactive DC magnetron sputtering Al powder + Ar + N2 crystal Si, amorphous SiN [21] Reactive plasma spray Al2O3 + N2 mild steel (SS400) [22] RF magnetron sputtering AlN + Ar glass, mica, and silicon [23] Atomic layer deposition Al(C4H9)3 + N2H5Cl + C12H27Al silicon [24] Wet-thermal treatment (WTT) NH3 + N2 + AlCl3 carbon fiber [25] Pulsed laser deposition AlN + N2 Si (100) [26] Magnetron sputtering system Al + N2 silicon nitride [27] RF = Radio frequency; DC = Direct current; LT = Low temperature. Table 3. Summary of different methods used for producing AlN powder. Method Precursors Reference Carbothermal reduction Al2O3 + N2 + C/CH4 [28] CVD AlCl3 + NH3 + N2 [29] ◦ Reaction 500–1000 C for 5 h Al2S3 + NH3 [30] Sol-gel C9H21O3Al + dextrose [31] Mechanochemical Al2O3 powder + N2 [32] Mechanochemical Al powder + Melamine [33] Transferred Arc-plasma Al powder + N2 + NH3 [16] Microwave plasma Al powder + NH4Cl + N2 + H2 [34] Solvent thermal synthesis AlCl3 + NaN3 [35] Low-temperature synthesis Al + NH4Cl [36] Reactive plasma spray Al + AlN powders [37] CVD = Chemical vapor deposition; LT = Low temperature. Thermal plasma technology is a well-adapted technology for synthesizing crystalline nano materials because of the fast reaction rates achieved due to the high plasma tempera- tures [5], its flexibility in the choice of various feedstock materials [38], its high conversion rates and energy efficiency [10] and its rapid quenching [39]. Furthermore, plasma spray technology simplifies the inflight reaction of the precursors and the in situ formation of the coatings in a wide range of thickness. Due to the high reaction rate, a dense coating is produced. Among all the thermal spray methods, plasma spraying is extensively used to produce coatings due to its high enthalpy, with the molten or semi molten particles being propelled to adhere and solidify on the substrate [40]. However, sometimes it is not necessary to melt the particles fully, because it is possible for particles in a semi molten state to be deposited as a coating. Moreover, a thermal plasma process can allow for a wide Coatings 2021, 11, 500 3 of 21 range of coating thicknesses, stretching from nm to mm [41]. In order for the deposited coating to stick to the substrate, the injected particles must melt or be in semi-molten state when they pass through the hot core of the plasma. The high melting point of AlN (2200 ◦C) as well as its decomposition at high temperatures does not facilitate the deposition of AlN particles injected through the plasma [41]. Besides ammonia [42], nitrogen gas is usually used as a nitriding agent [32], but recently urea [43], and melamine to produce Si-C-N [44], or AlN ceramics [45] have been proposed for nitriding reactions. Melamine (C3H6N6), an organic compound containing about 67 wt% nitrogen is a trimer of cyanamide, with a 1,3,5-triazine skeleton, that re- leases nitrogen at high temperatures [46], and has been used to produce AlN powder by mechanochemical reaction with Al [47]. Direct injection of nitriding powders such as urea or melamine with Al into plasma, unlike N2 gas, is challenging, particularly when there are different precursor components with various particle sizes and densities [41]. To alleviate the injection problems, suspension liquids have been employed as carrier media of transporting even nano particles into the high temperature zones of plasma, with the added benefits of providing chemical reactions within the suspension liquid. Indeed, powder precursors are dispersed in the liquid media and when injected into plasma, the liquid phase evaporates, while the solid particles melt and vaporize to form clusters. Suspension plasma spray (SPS) was invented to create a homogenous precursor to facilitate direct injection of small particles into plasma by dispersing them in a liquid carrier [48]. In order to produce a durable coating that can withstand thermal shocks, both the coating and the substrate should ideally have linear thermal expansion coefficient that are similar. Substrate materials should have higher melting points and lower thermal expan- sion coefficients than Al [49]. An interlayer coating can be used to adapt the expansion coefficient difference [50]. 1.3. Non-Wetting Properties In many material processing techniques, for example, in casting processes, molten metals are ordinarily in direct contact with ceramic refractories. Therefore, the properties of the
Recommended publications
  • Developing Aluminum Nitride Nanoparticles: Chemical Synthesis
    NanoPharma 2020 Der Pharmacia Sinica 2020 Vol.11 No.3 Developing Aluminum Nitride Nanoparticles: Chemical synthesis and Exploration of biocompatibility and anticancer activity against Cervical Cancer Cells Manjot Kaur 1, Kulwinder Singh 1, Paviter Singh 1, Amanpreet Kaur 1, 2, Ramovatar Meena 3, Gajendra 4 5 6 1 Pratap Singh , Hamed Barabadi , Muthupandian Saravanan *, Akshay Kumar 1Advanced Functional Material Lab., Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib-140 407, Punjab, India 2Department of Physics, Sri Guru Granth Sahib World University, Fatehgarh Sahib-140 407, Punjab, India 3Nanotoxicology Laboratory, School of Environmental Sciences, Jawaharlal Nehru University, New Delhi-110067, India 4School of Computational and Integrated Sciences, Jawaharlal Nehru University, New Delhi-110 067, India 5Department of Pharmaceutical Biotechnology, School of Pharmacy, Shahid Beheshti University of Medical Sciences, Tehran, Iran 6Department of Medical Microbiology and Immunology, Division of Biomedical Sciences, School of Medicine, College of Health Sciences, Mekelle University, Mekelle, Ethiopia AlN nanoparticles were synthesized using a simple and sensors and implantable biomedical and effective solvothermal method. The X-ray diffraction results microelectromechanical devices. However, the development of revealed the cubic phase of AlN, and the field emission such materials is bound to one requirement, which is scanning electron microscopy analysis demonstrated the biocompatibility. The materials showing great chemical structural morphology of the synthesized materials. In addition, inertness, stability, and high compatibility with biological the cytotoxicity of the AlN nanoparticles was assessed against samples are considered optimal in this regard to be utilized in healthy (HEK-293, HUVEC, and MCF10A) and cancerous cell biomedical devices. The main benefit of the lower cytotoxicity line (HeLa).
    [Show full text]
  • Chemical Formula of Binary Ionic Compounds – Sheet 1 the Combining Power Or Valency of Silver Is Always 1
    Chemical Formula of Binary Ionic Compounds – Sheet 1 The combining power or valency of silver is always 1. All other transition metals are 2 unless otherwise indicated. No. Binary compound Formula No. Binary compound Formula 1 potassium fluoride 26 calcium sulfide 2 calcium chloride 27 lithium bromide 3 barium bromide 28 nickel sulfide 4 silver sulfide 29 zinc phosphide 5 aluminium iodide 30 barium iodide 6 potassium iodide 31 caesium chloride 7 lead(IV) oxide 32 copper bromide 8 zinc nitride 33 sodium nitride 9 silver iodide 34 silver chloride 10 barium fluoride 35 sodium hydride 11 lead(II) iodide 36 potassium nitride 12 silver fluoride 37 cobalt chloride 13 sodium sulfide 38 magnesium sulfide 14 sodium bromide 39 potassium chloride 15 calcium oxide 40 calcium bromide 16 zinc fluoride 41 iron(III) oxide 17 strontium phosphide 42 aluminium fluoride 18 barium sulfide 43 magnesium bromide 19 aluminium oxide 44 iron(III) chloride 20 aluminium chloride 45 barium nitride 21 aluminium sulfide 46 sodium fluoride 22 lead(II) oxide 47 lithium fluoride 23 barium chloride 48 lithium iodide 24 copper chloride 49 lithium hydride 25 barium phosphide 50 potassium oxide “Aluminum” and “cesium” are commonly used alternative spellings for "aluminium" and "caesium that are used in the US. May be freely copied for educational use. ©www.chemicalformula.org Chemical Formula of Binary Ionic Compounds – Sheet 2 The combining power or valency of silver is always 1. All other transition metals are 2 unless otherwise indicated. No. Binary compound Formula No.
    [Show full text]
  • First Principles Study of 2D Gallium Nitride and Aluminium Nitride in Square-Octagon Structure
    FIRST PRINCIPLES STUDY OF 2D GALLIUM NITRIDE AND ALUMINIUM NITRIDE IN SQUARE-OCTAGON STRUCTURE a thesis submitted to the graduate school of engineering and science of bilkent university in partial fulfillment of the requirements for the degree of master of science in physics By Emel G¨urb¨uz July 2017 FIRST PRINCIPLES STUDY OF 2D GALLIUM NITRIDE AND ALUMINIUM NITRIDE IN SQUARE-OCTAGON STRUCTURE By Emel G¨urb¨uz July 2017 We certify that we have read this thesis and that in our opinion it is fully adequate, in scope and in quality, as a thesis for the degree of Master of Science. Salim C¸ıracı(Advisor) Seymur Cahangirov Ay¸seC¸i˘gdemEr¸celebi Approved for the Graduate School of Engineering and Science: Ezhan Kara¸san Director of the Graduate School ii ABSTRACT FIRST PRINCIPLES STUDY OF 2D GALLIUM NITRIDE AND ALUMINIUM NITRIDE IN SQUARE-OCTAGON STRUCTURE Emel G¨urb¨uz M.S. in Physics Advisor: Salim C¸ıracı July 2017 This thesis, deals with the planar free-standing, single-layer, square-octagon (SO) structures of GaN and AlN. We investigated single-layer and multilayer so-GaN and so-AlN structures, their stability, electronic properties and functionalization; adatom and vacancies using first principles pseudopotential plane wave calcula- tions. We performed an extensive analysis of dynamical and thermal stability in terms of ab-initio finite temperature molecular dynamics and phonon calcu- lations together with the analysis of Raman and infrared active modes. These single layer square-octagon structures of GaN and AlN display directional me- chanical properties, and have fundamental indirect band gaps, which are smaller than their hexagonal counter parts.
    [Show full text]
  • Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: a Review
    Review Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review Abid Iqbal and Faisal Mohd-Yasin * Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia; [email protected] * Correspondence: [email protected] Received: 24 April 2018; Accepted: 1 June 2018; Published: 2 June 2018 Abstract: We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters. Keywords: physical vapor deposition; sputtering; aluminum nitride; piezoelectric; energy harvester 1. Introduction Energy harvesting or energy scavenging is the process of extracting energy from the ambient sources in the environment. Energy harvester, instead of battery usage, is preferred for powering wireless sensors because the latter is limited by its limited life span. The ambient sources are broadly divided into four categories: Solar, thermal, wind, and mechanical vibration [1]. Researchers have investigated different methods to convert them into electrical energy via resonant and non-resonant devices [2]. A variety of transduction schemes have been proposed using solar, thermoelectric, electromagnetic, piezoelectric, capacitive etc. Among them, piezoelectric emerges as one of the most practical solutions. It does not require external power sources for polarization in comparison to the electrostatic transductions.
    [Show full text]
  • Oxidation Rates of Aluminium Nitride Thin Films: Effect of Composition of the Atmosphere
    J Mater Sci: Mater Electron DOI 10.1007/s10854-017-7243-5 Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere Ryszard Korbutowicz1 · Adrian Zakrzewski2 · Olga Rac‑Rumijowska1 · Andrzej Stafiniak1 · Andrej Vincze3 Received: 16 March 2017 / Accepted: 29 May 2017 © The Author(s) 2017. This article is an open access publication Abstract This paper presents an analysis of thermal oxi- 1 Introduction dation kinetics for Aluminium nitride (AlN) epitaxy layers using three methods: dry, wet and mixed. The structures The development of complex III-nitride semiconductor thus obtained were examined by means of scanning elec- technology has opened up new possibilities of using them tron microscope, energy-dispersive X-ray spectroscopy, in such devices as light emitters and detectors, diodes, spectroscopic ellipsometry and secondary ions mass spec- and microwave transistors [1]. New MOS- and MIS-based troscopy. On the basis of the investigation results, a model devices are used for the production of gases and other of layer structure after oxidation was proposed, the thick- chemical compounds detectors [2, 3]. Here surface passi- ness of the layers was assessed and the refractive indices for vation must be overcome to stabilise the properties of the particular layers were determined. The modelling results gas sensitive surface. The recent literature on this subject prove that AlN thermal oxidation in dry oxygen follows the includes a significant number of descriptions concerning logarithmic law, wet oxidation follows the parabolic law, the phenomena during the thermal dry and wet aluminium whereas mixed oxidation follows the linear law. oxidation. Among the main techniques for the production of passivation layers on the surface of III-nitride semiconduc- tor devices, the vacuum methods, often plasma-supported, are mentioned.
    [Show full text]
  • Photocurable Acrylate-Based Composites with Enhanced Thermal Conductivity Containing Boron and Silicon Nitrides
    eXPRESS Polymer Letters Vol.12, No.9 (2018) 790–807 Available online at www.expresspolymlett.com https://doi.org/10.3144/expresspolymlett.2018.68 Photocurable acrylate-based composites with enhanced thermal conductivity containing boron and silicon nitrides M. Sadej1, H. Gojzewski2,3, P. Gajewski1, G. J. Vancso3, E. Andrzejewska1* 1Faculty of Chemical Technology, Poznan University of Technology, Berdychowo 4, 60-965 Poznan, Poland 2Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland 3Materials Science and Technology of Polymers, Faculty of Science and Technology, University of Twente, Drienerlolaan 5, 7522 NB Enschede, the Netherlands Received 7 February 2018; accepted in revised form 10 April 2018 Abstract. Boron nitride (BN) and silicon nitride (Si3N4) are very promising particulate fillers for production of photocurable composites dedicated to thermally conductive and electrically insulating protective coatings. Composites containing crosslinked methacrylate-based matrices filled with BN or Si3N4 (in amounts up to 5 wt%) were prepared in a fast in situ photocuring process with high conversion (>90%). The monomers were polyethylene glycol dimethacrylate and mono - methacrylate (50/50 by weight mixture). Investigations included determination of properties of the monomer/filler compo- sitions, photocuring kinetics and thermal, conductive and mechanical properties of the resulting composites. It was found that addition of the fillers improves polymerization kinetics and mechanical properties compared to the pure polymer matrix. Despite the very low loading level a substantial improvement in thermal conductivity was obtained: a 4-fold increase after addition of only 2 wt% of Si3N4 and 2.5-fold increase after addition of 0.5 wt% of BN.
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Mechanism and Kinetics of Aluminum Nitride Powder Degradation in Moist Air
    J. Am. Ceram. Soc., 89 [3] 937–943 (2006) DOI: 10.1111/j.1551-2916.2005.00767.x r 2005 The American Ceramic Society Journal Mechanism and Kinetics of Aluminum Nitride Powder Degradation in Moist Air Jinwang Li,*,w Masaru Nakamura, Takashi Shirai, Koji Matsumaru, Chanel Ishizaki,z and Kozo Ishizaki* School of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan Aluminum nitride (AlN) powders manufactured via three major oxygen content in AlN powder.17 In contrast, degradation of commercial processes, namely, chemical vapor deposition from AlN powders in ambient atmospheres at room temperature has triethyl aluminum, carbothermal reduction and nitridation of been much less studied. Abid et al.18 reported that AlN did not alumina, and direct nitridation of aluminum, were exposed to readily react with atmospheric moisture at room temperature. moist air at room temperature to investigate the degradation On the other hand, Kameshima et al.19 found, using X-ray pho- mechanism and kinetics. In the degradation, the powders were toelectron spectrometry (XPS), that the surface of AlN powders initially hydrolyzed to amorphous aluminum oxyhydroxide, reacted slowly with atmospheric moisture during several years of which subsequently transformed into mixtures of crystallized storage in a capped container. aluminum trihydroxide (Al(OH)3) polymorphs, i.e., bayerite, A thorough understanding of the degradation mechanism nordstrandite, and gibbsite, forming agglomerates around the and kinetics for AlN powders under atmospheric conditions is unreacted AlN. The data were fitted by using the unreacted-core fundamental for appropriate powder processing. Unfortunately, model. Three stages were found in the degradation: the stage of research reports for this purpose are hitherto unavailable, in an induction period at the beginning, followed by a stage of fast contrast to numerous publications on AlN powder preparation, hydrolysis with the chemical reaction being rate controlling, and oxidation at elevated temperatures, sintering, etc.
    [Show full text]
  • Salt-Assisted SHS Synthesis of Aluminium Nitride Powders for Refractory Applications
    Journal of Materials Science and Chemical Engineering, 2014, 2, 26-31 Published Online October 2014 in SciRes. http://www.scirp.org/journal/msce http://dx.doi.org/10.4236/msce.2014.210004 Salt-Assisted SHS Synthesis of Aluminium Nitride Powders for Refractory Applications Alan Wilmański, Mirosław M. Bućko, Zbigniew Pędzich, Jacek Szczerba AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow, Poland Email: [email protected] Received July 2014 Abstract Powders of aluminum nitride can be prepared by self-sustain high-temperature synthesis (SHS) between aluminum and nitrogen but its high exothermic effect causes melting and evaporation of aluminum and low efficiency of such reaction. A presence of inorganic salt in the starting powder mixture can decrease a heat evolved in the SHS reaction, hinders melting and coalescence of alu- minum, and facilitates penetration of nitrogen into interior of a powder bed. Mixtures of alumina powders with different grain sizes and different amounts of aluminum carbonate were subjected to the SHS reaction under 0.05, 0.1 or 1 MPa nitrogen. The powders were composed of aluminum nitride, unreacted aluminum, aluminum oxynitride and in some cases corundum and aluminum oxycarbonate. The finale effects are strongly dependent on the amount of the salt, a grain size of aluminum and a nitrogen pressure. Keywords Aluminum Nitride, Self-Sustain High-Temperature Synthesis, Salt Assisted Synthesis, Refractory Materials 1. Introduction Aluminum nitride, AlN, is a promising ceramic material for functional and structural applications due to its very high thermal conductivity, low electrical conductivity, high flexural strength of about 400 MPa and a hardness of about 15 GPa [1]-[3].
    [Show full text]
  • Piezoelectric Aluminium Nitride Thin Films by PECVD
    UNIVERSIDAD DE LA REPÚBLICA ORIENTAL DEL URUGUAY UNIVERSITÉ DE LIMOGES (FRANCE) CO-ADVISED THESIS For the degree DOCTOR EN INGENIERÍA QUÍMICA de la Facultad de Ingeniería de MONTEVIDEO DOCTEUR DE L’UNIVERSITÉ DE LIMOGES Spécialité: Matériaux Céramiques et Traitements de Surface Gustavo SÁNCHEZ MATHON February the 12 th 2009, Montevideo, Uruguay PIEZOELECTRIC ALUMINUM NITRIDE THIN FILMS BY PECVD Advisors: Aldo BOLOGNA ALLES / Pascal TRISTANT, Christelle DUBLANCHE-TIXIER Jury : President : Prof. Jean Claude LABBE SPCTS, Limoges (France) Revisors: Prof. Miriam CASTRO UNMDP, Mar del Plata (Argentina) Prof. Abdou DJOUADI IMN, Nantes (France) Members: Prof. Ismael PIEDRA-CUEVA FING, Montevideo (Uruguay) Prof. Enrique DALCHIELE FING, Montevideo (Uruguay) Dr. Christelle DUBLANCHE-TIXIER SPCTS, Limoges (France) Prof. Pascal TRISTANT SPCTS, Limoges (France) Prof. Aldo BOLOGNA ALLES FING, Montevideo (Uruguay) Acknowledgments I want to express my sincere gratitude to my thesis advisors, Dr. Aldo Bologna Alles, Dr. Pascal Tristant and Dr. Christelle Dublanche-Tixier for their friendship and guidance throughout the course of this work. I also gratefully acknowledge Dr. Jean Claude Labbe, Dr. Ismael Piedra-Cueva, Dr. Abdou Djouadi, Dr. Miriam Castro, and Dr. Enrique Dalchiele for serving on my committee. I would also like to thank to several members of the SPCTS laboratory at Limoges for their support: Daniel Tetard, Thérèse Merle, Valérie Coudert, Phillippe Thomas, Alexandre Boulle, René Guinebretiere, Bernard Soulestin, Fabrice Rossignol, Daniel Merle and Cédric Jaoul. I would like to give a special acknowledge in this sense to Hervé Hidalgo. I want to acknowledge to Jaume Esteve and Joseph Montserrat from the Instituto de Microelectrónica de Barcelona for their assistance in the cleanroom fabrication of SAW devices, as well as to Aurelian Crunteanu from X-LIM (Limoges) for his assistance in the cleanroom fabrication of BAW devices as well in the device characterizations.
    [Show full text]
  • Filament-Activated Chemical Vapour Deposition of Nitride Thin Films
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, VOL 6,135-146 (1996) Review Paper Filament-activated Chemical Vapour Deposition of Nitride Thin Films Sadanand V. Deshpande,* Jeffrey L. Dupuiet and Erdogan Gulari* Department of Chemical Engineering and Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109, U.S.A. We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tungsten filament (1500-1850°C) was utilised to decompose ammonia in order to deposit nitride films at low substrate temperatures and high rates. The substrate temperatures ranged from 245 to 600°C. The film properties were characterised by a number of analytical and optical methods. The effect of various deposition conditions on film properties was studied. All the films obtained were of high chemical purity and had very low cr no detectable tungsten contamination from the filament metal. KEYWORDS hot filament chemical vapour deposition; CVD; high-rate deposition; ammonia: silicon nitride: aluminium nitride: titanium nitride INTRODUCTION design and operating regimes, films with varied properties can be deposited with little or no COP- tamination from reactions at the reactor walls as is Hot filament-activated chemical vapour deposition found in other techniques such as plasma-assisted (HFCVD) is a simple and a relatively inexpensive chemical vapour deposition. method that has been used to deposit a variety of HFCVD has been extensively used for over a materials.
    [Show full text]
  • Bulk Aluminium Nitride Platform for Gallium Nitride High Voltage And
    82 Technology focus: Nitride electronics Bulk aluminium nitride platform for gallium nitride high voltage and power Researchers claim first measurements on quantum well field-effect transistors achieve record high drain current of 2A/mm. he USA’s University of Notre Dame and Cornell University have claimed the first Tmeasurements on aluminium nitride/ gal- lium nitride (AlN/GaN/AlN) quantum well (QW) field-effect transistors (FETs) on bulk AlN sub- strates with re-grown ohmic contacts [Meng Qi et al, Appl. Phys. Lett., vol110, p063501, 2017]. A device with 65nm gate length achieved a record-high drain current of 2A/mm, it is claimed. The researchers see potential for future high- voltage and high-power microwave electronics. The use of AlN increases the bandgap to 6.2eV, while a large conduction band offset increases the electron confinement in GaN QWs. The GaN/AlN charge polarization contrast should also increase carrier densities and drive currents. Another attractive feature of AlN is a high ther- mal conductivity of 340W/m-K, close to that of silicon carbide substrates (370W/m-K), which are often used for state-of-the-art AlGaN/GaN devices. High thermal conductivity relieves heat dissipation in high-power operation. The AlN/GaN/AlN quantum well structures (Figure 1) were grown by radio frequency plasma molecular beam epitaxy (MBE) on semi- insulating aluminium-polar bulk AlN substrates. The wafers were 400µm thick. The structure also included a 1.5nm GaN cap to prevent oxi- dation of the 6nm AlN top barrier. The conductivity of the two-dimensional elec- tron gas (2DEG) that forms near the AlN/GaN QW interface through charge polarization effects Figure 1.
    [Show full text]